CN106206383A - Film forming method and semiconductor structure - Google Patents
Film forming method and semiconductor structure Download PDFInfo
- Publication number
- CN106206383A CN106206383A CN201610802265.2A CN201610802265A CN106206383A CN 106206383 A CN106206383 A CN 106206383A CN 201610802265 A CN201610802265 A CN 201610802265A CN 106206383 A CN106206383 A CN 106206383A
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- area
- thin film
- film
- lobe
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
A kind of film forming method and a kind of semiconductor structure, wherein film forming method includes: providing substrate, described substrate includes first area and second area, and the second area surface of described substrate has lobe；Forming first area and the thin film of second area covering described substrate, the film surface position being positioned on second area is higher than the film surface being positioned on first area, and the thickness of described thin film is more than the height of lobe；Described thin film is planarized, makes the film surface after the planarization on first area and second area flush and higher than lobe top.Said method can form the thin film of surfacing, thus in successive process, when substrate access arrangement is fixed on microscope carrier, the vacuum between microscope carrier and film surface can meet the requirements, do not have substrate drop from microscope carrier, cannot the problem such as operation.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of film forming method and a kind of semiconductor structure.
Background technology
Along with the growth requirement that electronics device is light, thin, short and small, and the application of 3D encapsulation, complete some metal couplings or
After planting ball product, in addition it is also necessary to wafer rear is carried out thinning.The side surface being formed with device at wafer carries out pad pasting, right
When wafer carries out thinning, the device architecture on wafer is protected, smooth surface is provided simultaneously so that wafer is being subtracted
Bao Shi, wafer carrier needs to adsorb, wafer pad pasting side with fixing wafer position.
And owing to the regions such as some crystal round fringes are formed without metal coupling or other bulge-structures, after causing pad pasting, shape
Become have have between the film surface on the region of bulge-structure, and the film surface not formed on the region of bulge-structure bigger
Difference in height, wafer carrier adsorb wafer time be unable to reach minimum vacuum requirement, so that board cannot operation.
It is therefore desirable to a kind of new film forming method so that the thin film formed on wafer has flat surfaces, it is to avoid
After entering board, it is impossible to adsorbed by microscope carrier.
Summary of the invention
The technical problem to be solved is to provide a kind of film forming method and a kind of semiconductor structure, is formed
The thin film that surface is smooth.
As indicated in the background, in prior art, the thin film often formed in wafer zones of different has bigger height
Difference, wafer carrier is unable to reach minimum vacuum requirement when adsorbing wafer, causes the board cannot operation.For this situation,
Currently mainly by after to wafer pad pasting, then it is padded to carry out pad pasting on the region be formed without bulge-structure, thus subtracts
The difference in height of the film surface of few zones of different.But, owing to said method typically requires manual operation, existing way disunity
Non-type problem, when still there will be microscope carrier absorption, vacuum values is undesirable, it is impossible to the situation of operation.
In order to solve the problems referred to above, the invention provides a kind of film forming method, including: substrate, described substrate are provided
Including first area and second area, the second area surface of described substrate has lobe；Formed and cover the of described substrate
One region and the thin film of second area, the film surface position being positioned on second area is higher than the thin film table being positioned at first area
Face, and the thickness of described thin film is more than the height of lobe；Described thin film is planarized, makes first area and second area
On planarization after film surface flush and higher than lobe top.
Optionally, the thickness of described thin film is more than three times of lobe maximum height.
Optionally, use rotation to cut film mode described thin film is planarized.
Optionally, using the film surface position on described first area as the stop position of planarization.
Optionally, described lobe is metal coupling or soldered ball.
Optionally, described thin film is that wafer cuts protecting film.
Technical scheme also provides for a kind of semiconductor structure using said method to be formed, including: substrate, described
Substrate includes first area and second area, and the second area surface of described substrate has lobe；Cover the of described substrate
One region and the thin film of second area, described film surface flushes and higher than lobe top.
Optionally, the film thickness of the first area covering described substrate is more than three times of lobe maximum height.
Optionally, described lobe is metal coupling or soldered ball.
Optionally, described thin film is that wafer cuts protecting film.
The forming method of the thin film that the present invention provides is more than the thin film of lobe height by forming thickness at substrate surface,
Then thin film is planarized, it is possible to eliminate the difference in height of film surface, thus in successive process, substrate access arrangement is solid
Time on microscope carrier, the vacuum between microscope carrier and film surface can meet the requirements, do not have substrate drop from microscope carrier, nothing
The problems such as method operation.
Further, the thickness of the thin film before planarization is three times more than lobe maximum height, then institute after planarization
State the thickness of thin film at lobe top at least above the twice of the maximum height of lobe, in subsequent technique processing procedure, it is possible to
Described lobe is played enough protective effects.
The substrate surface of the semiconductor structure that the present invention provides has the thickness thin film more than lobe maximum height, and institute
State film surface to flush, there is no difference in height, thus in successive process, when substrate access arrangement is fixed on microscope carrier, microscope carrier with
Vacuum between film surface can meet the requirements, do not have substrate drop from microscope carrier, cannot the problem such as operation.To substrate
When being ground, substrate pressurized can be made evenly, reduce the amounts of thickness variation of substrate after grinding.
Accompanying drawing explanation
Fig. 1 to Fig. 3 is the structural representation of the film forming method of the embodiment of the invention；
Fig. 4 is the schematic diagram planarizing thin film of the embodiment of the invention；
Fig. 5 is the close-up schematic view planarizing thin film of the embodiment of the invention；
Fig. 6 is the schematic diagram planarizing thin film of the embodiment of the invention；
Fig. 7 is the sampling location schematic diagram sampling wafer thickness of the embodiment of the invention.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the thin film planarization method that the present invention provides is elaborated.
Refer to Fig. 1, it is provided that substrate 100, described substrate 100 includes first area I and second area II, described substrate
The second area II surface of 100 has lobe 101.
Described substrate 100 includes Semiconductor substrate and the semiconductor device of surface formation, dielectric layer, metal interconnecting layer
Deng.The quantity of described lobe 101 is at least one, can be metal coupling or soldered ball, is taken as Flip Chip Bond Technique and carries out
Welding position during encapsulation, and, multiple lobe 101 can be respectively provided with different height.In present embodiment, described lining
The end is wafer, and lobe 101 is metal coupling.In other embodiments of the present invention, described lobe 101 can also is that it
His device or structure.
In present embodiment, described substrate 100 includes that first area I and second area II, first area I are positioned at the secondth district
Territory II is peripheral, and described lobe 101 is formed on the second area II of substrate 100, thus the I surface, first area of substrate 100
Top less than described lobe 101.Follow-up formation thin film in described substrate 100, on first area I and second area II
Thin film can have difference in height.
Refer to Fig. 2, form the thin film 200 of the first area I and second area II that cover described substrate 100, be positioned at the
Thin film 200 surface location on two region II thin film 200 surface higher than covering substrate 100 first area I, and described thin film
The thickness of 200 is more than the height of lobe 101.
Described thin film 200 cuts protecting film for wafer, for being formed in substrate 100 in follow-up grinding or cutting technique
Device, structure etc. protects.Described thin film 200 can be UV film or blue film, by pasting mode in described substrate 100
Described thin film 200 is formed on first area I and second area II.Owing to being formed with lobe 101 on second area II, so position
Thin film 200 surface location on second area II is higher than thin film 200 surface covering substrate 100 first area I.Owing to using
Attaching process forms described thin film 200, for the interstitial vacancy state not being filled between described adjacent projections 101.
In order to make follow-up thin film 200 is planarized after, described lobe 101 top still can be by thin film 200 institute
Covering, the thickness H of described thin film 200 is at least above the maximum height of lobe 101.It is considered that in subsequent technique processing procedure, formed
A side surface in thin film 200 can be applied pressure to the lobe 101 of thin film 200 lower floor by wafer carrier vac sorb, if
After planarization, the film thickness at lobe 101 top is too small, it is impossible to play a protective role lobe 101, in planarization process
Also easily lobe 101 is caused damage, and when substrate is adsorbed, lobe 101 can be caused to bear pressure relatively big, easily
Collapse or the problem such as fracture.In a specific embodiment of the present invention, the thickness of described thin film 200 is more than lobe
3 times of 101 maximum heights, to guarantee that lobe 101 can be played enough protective effects by described thin film 200.
Refer to Fig. 3, described thin film 200 is planarized, after making the planarization on first area I and second area II
Thin film 201 surface flush and higher than lobe 101 top.
To use rotation to cut film mode, described thin film 200 can be planarized, specifically, refer to Fig. 4 and Fig. 5, for this
The concrete schematic diagram of film is cut in the rotation inventing a detailed description of the invention, and wherein Fig. 5 is close-up schematic view.
Microscope carrier is fixed in described substrate 100, and rotating disk 400 edge above microscope carrier has a cutter 401, by adjusting rotating disk
400 highly make cutter 401 be positioned at proper height, then by rotating disk 400 rotation in the horizontal direction, make water along X-direction simultaneously
Flat motion so that thin film 200 is planarized by cutter 401 along arc trajectory (refer to Fig. 5), by controlling described rotating disk
The rotating speed of 400 and the movement rate along X-direction, so that higher than the part thin film of cutter 401 position of tool tip by completely
Remove, thus form the thin film after planarization 201 (refer to Fig. 3).
In this specific embodiment, the surface of the thin film 200 on the position of tool tip of described cutter 401 and first area I
Position is identical, using the film surface position on described first area I as the stop position of planarization, forms smooth thin in surface
Film 201.In other embodiments of the present invention, it is thin that the position of tool tip of described cutter 401 may also be below on the I of first area
Film surface location.After all ensuring that planarization, described lobe 101 top has the thin film 201 of segment thickness, described cutter
The position of tool tip of 401 is higher than the top of described lobe 101.
In a specific embodiment of the present invention, the thickness of the thin film 200 before planarization is more than lobe 101
Three times of maximum height, then after planarizing, the thickness of the thin film 201 at described lobe 101 top is at least above lobe 101
The twice of maximum height, in subsequent technique processing procedure, it is possible to described lobe 101 is played enough protective effects.
Refer to Fig. 6, for the schematic diagram that thin film 200 is planarized of another detailed description of the invention of the present invention.
Microscope carrier 600 is fixed in described substrate 100, and rotating disk 400 edge above microscope carrier 600 has a cutter 401, by adjusting
Turn over dish 400 highly makes cutter 401 be positioned at proper height, described rotating disk 400 with rotating shaft 402 as axle center, rotation in the horizontal direction,
Microscope carrier 600 moves horizontally along X-direction so that thin film 200 is planarized by cutter 401 along arc trajectory, by controlling
The rotating speed of described rotating disk 400 and microscope carrier 600 are along the movement rate of X-direction, so that higher than cutter 401 position of tool tip
Part thin film is completely removed, thus forms the thin film after planarization 201 (refer to Fig. 3).
In other embodiments of the present invention, it is possible to so that described rotating disk 400 remains stationary as, described microscope carrier 600 is made to take
Strip substrate 100 carries out rotation, and moves horizontally along X-direction, it is achieved the planarization to thin film 200.
The forming method of above-mentioned thin film is by forming the thickness thin film more than lobe height at substrate surface, the most right
Thin film planarizes, it is possible to eliminate the difference in height of film surface, thus in successive process, substrate access arrangement is fixed on load
Time on platform, the vacuum between microscope carrier and film surface can meet the requirements, do not have substrate drop from microscope carrier, cannot operation
Etc. problem.
Prior art either uses mode that is padded or that form pseudo-lobe of taping all cannot avoid film surface
Difference in height, owing to wafer film surface does not flushes, after being adsorbed by microscope carrier wafer opposite side surface be difficult to keep perfectly level,
Thus follow-up when again wafer being carried out thinning, wafer compressing discontinuity, the flatness on wafer surface after thinning is had relatively
Big impact, the variable quantity of wafer thickness is relatively big, and described wafer thickness variable quantity refers to the difference of wafer thickness maxima and minima
Value.
Table 1 shows and is respectively adopted the padded mode of rubberizing of prior art and the method for the present invention at two identical crystalline substances
Formed after thin film on circle, then the wafer thickness variable quantity (TTV) after respectively two wafers being ground, respectively at wafer
9 positions carry out thickness sampling.Refer to Fig. 7, for the schematic diagram of wafer sampling location, described 9 positions lay respectively at crystalline substance
Circle orthogonal two diametrically, wherein a diameter of wafer alignment mark place diameter.
The wafer thickness variable quantity of the wafer after being ground again after prior art formation thin film is 6 μm, and uses this
After bright method forms thin film, the wafer thickness variable quantity at the wafer being ground is only 3 μm, it can be seen that, the present invention
Technical scheme by thin film is planarized, first the amounts of thickness variation of thin film is preferably minimized, more smooth with one
Wafer, on microscope carrier, follow-up is ground so that the amounts of thickness variation of wafer also reduces by Planar adsorbent again.
Table 1 wafer thickness variable quantity
The detailed description of the invention of the present invention also provides for a kind of semiconductor structure using said method to be formed.
Refer to Fig. 3, for the schematic diagram of described semiconductor structure.
Described semiconductor structure, including: substrate 100, described substrate 100 includes first area I and second area II, described
The second area II surface of substrate 100 has lobe 101；Cover the first area I and second area II of described substrate 100
Thin film 201, thin film 201 surface on described first area I and second area II flushes and higher than lobe 101 top.
Described substrate 100 includes Semiconductor substrate and the semiconductor device of surface formation, dielectric layer, metal interconnecting layer
Deng.The quantity of described lobe 101 is at least one, can be metal coupling or soldered ball, is taken as Flip Chip Bond Technique and carries out
Welding position during encapsulation, in present embodiment, described substrate is wafer, and lobe 101 is metal coupling.At its of the present invention
In his embodiment, described lobe 101 can also is that other devices or structure.
In present embodiment, described substrate 100 includes that first area I and second area II, first area I are positioned at the secondth district
Territory II is peripheral, and described lobe 101 is formed on the second area II of substrate 100, thus the I surface, first area of substrate 100
Top less than described lobe 101.
Described thin film 201 cuts protecting film for wafer, for being formed in substrate 100 in follow-up grinding or cutting technique
Device, structure etc. protects.Described thin film 201 can be UV film or blue film, in present embodiment, described adjacent projections
For the interstitial vacancy state not being filled between 101.The surfacing of described thin film 201, thus in successive process, substrate enters and sets
For when being fixed on microscope carrier, the vacuum between microscope carrier and film surface can meet the requirements, and does not haves substrate and falls from microscope carrier
Fall, cannot the problem such as operation.
In a specific embodiment of the present invention, the film thickness of the first area I covering described substrate 100 is more than
Three times of lobe 101 maximum height, so that thin film 201 thickness at lobe 101 top is maximum more than lobe 101 high
The twice of degree, thus lobe 101 can be played enough protective effects by described thin film 201.
The substrate surface of above-mentioned semiconductor structure has the thickness thin film more than lobe height, and described film surface is neat
Flat, there is no difference in height, thus in successive process, when substrate access arrangement is fixed on microscope carrier, between microscope carrier and film surface
Vacuum can meet the requirements, do not have substrate drop from microscope carrier, cannot the problem such as operation.On this basis substrate is entered
Row grinds, and can make substrate pressurized evenly, reduces the amounts of thickness variation of substrate.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (10)
1. a film forming method, it is characterised in that including:
Thering is provided substrate, described substrate includes first area and second area, and the second area surface of described substrate has lobe；
Forming first area and the thin film of second area covering described substrate, the film surface position being positioned on second area is high
In the film surface being positioned on first area, and the thickness of described thin film is more than the height of lobe；
Described thin film is planarized, makes the film surface after the planarization on first area and second area flush and be higher than
Lobe top.
Film forming method the most according to claim 1, it is characterised in that the thickness of described thin film is maximum more than lobe
Three times of height.
Film forming method the most according to claim 1, it is characterised in that use rotation to cut film mode and described thin film is entered
Row planarization.
Film forming method the most according to claim 1, it is characterised in that with the film surface position on described first area
Put the stop position as planarization.
Film forming method the most according to claim 1, it is characterised in that described lobe is metal coupling or soldered ball.
Film forming method the most according to claim 1, it is characterised in that described thin film is that wafer cuts protecting film.
7. a semiconductor structure, it is characterised in that including:
Substrate, described substrate includes first area and second area, and the second area surface of described substrate has lobe；
Covering the first area of described substrate and the thin film of second area, described film surface flushes and higher than lobe top.
Semiconductor structure the most according to claim 7, it is characterised in that the thin film of the first area covering described substrate is thick
Degree is more than three times of lobe maximum height.
Semiconductor structure the most according to claim 7, it is characterised in that described lobe is metal coupling or soldered ball.
Semiconductor structure the most according to claim 7, it is characterised in that described thin film is that wafer cuts protecting film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610802265.2A CN106206383A (en) | 2016-09-05 | 2016-09-05 | Film forming method and semiconductor structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610802265.2A CN106206383A (en) | 2016-09-05 | 2016-09-05 | Film forming method and semiconductor structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106206383A true CN106206383A (en) | 2016-12-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610802265.2A Pending CN106206383A (en) | 2016-09-05 | 2016-09-05 | Film forming method and semiconductor structure |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008098435A (en) * | 2006-10-12 | 2008-04-24 | Tokyo Ohka Kogyo Co Ltd | Protection method and wafer thinning method of wafer circuit side |
| CN102034703A (en) * | 2009-09-29 | 2011-04-27 | 无锡华润上华半导体有限公司 | Grinding method |
| WO2015019816A1 (en) * | 2013-08-07 | 2015-02-12 | 日東電工株式会社 | Method for producing semiconductor package |
| CN102886829B (en) * | 2011-07-20 | 2016-05-11 | 株式会社迪思科 | Processing method |
-
2016
- 2016-09-05 CN CN201610802265.2A patent/CN106206383A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008098435A (en) * | 2006-10-12 | 2008-04-24 | Tokyo Ohka Kogyo Co Ltd | Protection method and wafer thinning method of wafer circuit side |
| CN102034703A (en) * | 2009-09-29 | 2011-04-27 | 无锡华润上华半导体有限公司 | Grinding method |
| CN102886829B (en) * | 2011-07-20 | 2016-05-11 | 株式会社迪思科 | Processing method |
| WO2015019816A1 (en) * | 2013-08-07 | 2015-02-12 | 日東電工株式会社 | Method for producing semiconductor package |
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