CN106201962A - 一种可作为gpio的高压烧录io电路 - Google Patents
一种可作为gpio的高压烧录io电路 Download PDFInfo
- Publication number
- CN106201962A CN106201962A CN201610535425.1A CN201610535425A CN106201962A CN 106201962 A CN106201962 A CN 106201962A CN 201610535425 A CN201610535425 A CN 201610535425A CN 106201962 A CN106201962 A CN 106201962A
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- voltage
- vpp
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/40—Bus structure
- G06F13/4063—Device-to-bus coupling
- G06F13/4068—Electrical coupling
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F8/00—Arrangements for software engineering
- G06F8/60—Software deployment
- G06F8/61—Installation
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Software Systems (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610535425.1A CN106201962B (zh) | 2016-07-08 | 2016-07-08 | 一种可作为gpio的高压烧录io电路 |
Applications Claiming Priority (1)
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CN201610535425.1A CN106201962B (zh) | 2016-07-08 | 2016-07-08 | 一种可作为gpio的高压烧录io电路 |
Publications (2)
Publication Number | Publication Date |
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CN106201962A true CN106201962A (zh) | 2016-12-07 |
CN106201962B CN106201962B (zh) | 2019-02-01 |
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Family Applications (1)
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CN201610535425.1A Expired - Fee Related CN106201962B (zh) | 2016-07-08 | 2016-07-08 | 一种可作为gpio的高压烧录io电路 |
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CN (1) | CN106201962B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106886501A (zh) * | 2017-01-03 | 2017-06-23 | 芯海科技(深圳)股份有限公司 | 一种流水线型的mtp快速烧录的方法 |
CN109521867A (zh) * | 2018-11-19 | 2019-03-26 | 南京英诺微盛光学科技有限公司 | 一种低功耗的芯片系统及其控制方法 |
CN110737226A (zh) * | 2019-11-04 | 2020-01-31 | 湖南品腾电子科技有限公司 | Mtp高压烧录脚电路结构 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640348A (en) * | 1994-10-28 | 1997-06-17 | Nec Corporation | Non-volatile semiconductor memory |
US6038635A (en) * | 1997-02-05 | 2000-03-14 | Nec Corporation | Microcomputer containing flash EEPROM therein |
CN203839049U (zh) * | 2014-05-05 | 2014-09-17 | 北京佳瑞欣科技发展有限公司 | 一种熔丝架构 |
-
2016
- 2016-07-08 CN CN201610535425.1A patent/CN106201962B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640348A (en) * | 1994-10-28 | 1997-06-17 | Nec Corporation | Non-volatile semiconductor memory |
US6038635A (en) * | 1997-02-05 | 2000-03-14 | Nec Corporation | Microcomputer containing flash EEPROM therein |
CN203839049U (zh) * | 2014-05-05 | 2014-09-17 | 北京佳瑞欣科技发展有限公司 | 一种熔丝架构 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106886501A (zh) * | 2017-01-03 | 2017-06-23 | 芯海科技(深圳)股份有限公司 | 一种流水线型的mtp快速烧录的方法 |
CN109521867A (zh) * | 2018-11-19 | 2019-03-26 | 南京英诺微盛光学科技有限公司 | 一种低功耗的芯片系统及其控制方法 |
CN109521867B (zh) * | 2018-11-19 | 2024-01-30 | 南京江智科技有限公司 | 一种低功耗的芯片系统及其控制方法 |
CN110737226A (zh) * | 2019-11-04 | 2020-01-31 | 湖南品腾电子科技有限公司 | Mtp高压烧录脚电路结构 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Gu Hongbo Inventor after: Ding Wei Inventor after: Wang Zezhou Inventor after: Tan Bihui Inventor after: Lei Huibin Inventor after: Tu Baisheng Inventor before: Wan Shanghong Inventor before: Ye Bizhou Inventor before: Li Bing Inventor before: Tu Baisheng |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 518051 Shenzhen Nanshan District, Guangdong Province, Guangdong Province, Yuehai Street High-tech Zone Community Science and Technology South Road 18 Shenzhen Bay Science and Technology Eco-Park 12 Skirt Building 732 Patentee after: Shenzhen Bojuxing Microelectronics Technology Co., Ltd. Address before: 518000 4th Floor, New Material Port D(4) Building, No.2 Changyuan New Material Port, Zhongxin Road, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Bojuxing Industrial Development Co., Ltd. |
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CP03 | Change of name, title or address | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190201 Termination date: 20210708 |
|
CF01 | Termination of patent right due to non-payment of annual fee |