CN106170874A - 半导体发光元件 - Google Patents
半导体发光元件 Download PDFInfo
- Publication number
- CN106170874A CN106170874A CN201580000842.XA CN201580000842A CN106170874A CN 106170874 A CN106170874 A CN 106170874A CN 201580000842 A CN201580000842 A CN 201580000842A CN 106170874 A CN106170874 A CN 106170874A
- Authority
- CN
- China
- Prior art keywords
- electrode
- semiconductor layer
- emitting elements
- insulating barrier
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 167
- 230000004888 barrier function Effects 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 116
- 239000000758 substrate Substances 0.000 description 12
- 230000005611 electricity Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140149069A KR101635521B1 (ko) | 2014-10-30 | 2014-10-30 | 반도체 발광소자 |
| KR10-2014-0149069 | 2014-10-30 | ||
| PCT/KR2015/011574 WO2016068643A1 (ko) | 2014-10-30 | 2015-10-30 | 반도체 발광소자 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106170874A true CN106170874A (zh) | 2016-11-30 |
Family
ID=55857864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580000842.XA Pending CN106170874A (zh) | 2014-10-30 | 2015-10-30 | 半导体发光元件 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101635521B1 (ko) |
| CN (1) | CN106170874A (ko) |
| WO (1) | WO2016068643A1 (ko) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170857A (zh) * | 2017-04-25 | 2017-09-15 | 淮安澳洋顺昌光电技术有限公司 | Led倒装芯片的制备方法 |
| CN108574032A (zh) * | 2017-03-10 | 2018-09-25 | 英属开曼群岛商錼创科技股份有限公司 | 发光元件与显示设备 |
| WO2021121324A1 (zh) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | 一种发光二极管 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108475715B (zh) | 2016-01-05 | 2020-11-03 | 世迈克琉明有限公司 | 半导体发光元件 |
| KR102348950B1 (ko) * | 2020-03-26 | 2022-01-11 | 주식회사 에스엘바이오닉스 | 반도체 발광소자 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024891A (zh) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | 发光元件 |
| JP2011108859A (ja) * | 2009-11-18 | 2011-06-02 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物化合物半導体発光素子 |
| JP2012138499A (ja) * | 2010-12-27 | 2012-07-19 | Rohm Co Ltd | 発光素子、発光素子ユニットおよび発光素子パッケージ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050049066A (ko) * | 2003-11-21 | 2005-05-25 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
| JP5541260B2 (ja) | 2011-03-21 | 2014-07-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP5715593B2 (ja) * | 2012-04-25 | 2015-05-07 | 株式会社東芝 | 半導体発光素子 |
-
2014
- 2014-10-30 KR KR1020140149069A patent/KR101635521B1/ko active IP Right Grant
-
2015
- 2015-10-30 CN CN201580000842.XA patent/CN106170874A/zh active Pending
- 2015-10-30 WO PCT/KR2015/011574 patent/WO2016068643A1/ko active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024891A (zh) * | 2009-09-18 | 2011-04-20 | 丰田合成株式会社 | 发光元件 |
| JP2011108859A (ja) * | 2009-11-18 | 2011-06-02 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物化合物半導体発光素子 |
| JP2012138499A (ja) * | 2010-12-27 | 2012-07-19 | Rohm Co Ltd | 発光素子、発光素子ユニットおよび発光素子パッケージ |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108574032A (zh) * | 2017-03-10 | 2018-09-25 | 英属开曼群岛商錼创科技股份有限公司 | 发光元件与显示设备 |
| CN107170857A (zh) * | 2017-04-25 | 2017-09-15 | 淮安澳洋顺昌光电技术有限公司 | Led倒装芯片的制备方法 |
| WO2021121324A1 (zh) * | 2019-12-17 | 2021-06-24 | 深圳第三代半导体研究院 | 一种发光二极管 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160053010A (ko) | 2016-05-13 |
| KR101635521B1 (ko) | 2016-07-05 |
| WO2016068643A1 (ko) | 2016-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161130 |