CN106169518A - A kind of laser pulse method carrying on the back passivation solaode - Google Patents
A kind of laser pulse method carrying on the back passivation solaode Download PDFInfo
- Publication number
- CN106169518A CN106169518A CN201610683628.5A CN201610683628A CN106169518A CN 106169518 A CN106169518 A CN 106169518A CN 201610683628 A CN201610683628 A CN 201610683628A CN 106169518 A CN106169518 A CN 106169518A
- Authority
- CN
- China
- Prior art keywords
- pulse
- laser
- back surface
- solaode
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 230000007547 defect Effects 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000009966 trimming Methods 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 12
- 230000006378 damage Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of laser pulse method carrying on the back passivation solaode.It comprises the following steps: A, monocrystalline silicon piece carries out making herbs into wool process, forms pyramid matte；B, diffusion are for PN junction；Flash trimming knot and surface defect are gone in C, polishing；D, made by ALD, PECVD the positive back side formed passivation film；E, carrying out lbg at back surface, fluting uses pulse mode to be multiple-pulse, and umber of pulse is 25；F, silk screen printing form anelectrode, back electrode and back surface field；G, sintering make to form good Ohmic contact between metal and silicon.Its advantage is: reduce silicon substrate and the damage of film layer, and when making lbg, the requirement to film layer planarization is relaxed, and the planarization making fluting position is more preferable, thus decreases the damage to back side film layer and silicon substrate, strengthens passivation effect；The flatness at lbg position is more preferable, enables silicon substrate and aluminum back surface field to form good Ohmic contact, thus improves the conversion efficiency of solaode.
Description
Technical field
The present invention relates to a kind of laser pulse method carrying on the back passivation solaode, belong to the manufacturing technology of solaode
Field.
Background technology
Cannot conduct electricity owing to Al2O3 thin film and SiN thin film are insulating barrier, the effect of laser is exactly mainly by back side film layer
Scratch and make silicon substrate expose, make silicon substrate can form good ohm with aluminum back surface field after completing to carry on the back electric field printing-sintering and connect
Touch, so make laser output energy have the passivation effect of aluminium oxide important impact, laser output energy conference to make corruption
The erosion degree of depth increases, hot injury directly affects more greatly the passivation effect of pellumina layer so that open-circuit voltage reduces, and laser exports
The little meeting of energy makes corrosion depth not enough, it is impossible to punch back side silicon nitride silicon completely and pellumina layer causes between silicon substrate and aluminum back surface field
Loose contact, makes series resistance be greatly increased, and reduces so that filling.
The most common laser pulse mode mostly is pulse, and it is relatively big that the most this pulse mode exports energy on year-on-year basis,
Wayward, less stable, easily causes damage to film layer and silicon substrate；The most now polishing process is for adapting to PERC electricity
Pond volume production demand uses acid polishing, but the planarization of this kind of polishing mode correspondence back of the body film plating layer is poor, passes through single pulse mode
Lbg position pattern is bad, is mainly reflected on planarization so that silicon substrate and the loose contact of aluminum back surface field.
Summary of the invention
The technical problem to be solved is to provide a kind of damage that can reduce back side film layer and silicon substrate, increases
Strong passivation effect, and the laser pulse method of the back of the body passivation solaode of the conversion efficiency of PERC battery can be improved.
In order to solve above-mentioned technical problem, the laser pulse method of the back of the body passivation solaode of the present invention, including following
Step:
A, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
B, diffusion are for PN junction；
Flash trimming knot and surface defect are gone in C, polishing, make back surface smooth；
D, made by ALD, PECVD the positive back side formed passivation film；
E, using laser equipment to carry out lbg at back surface, fluting uses pulse mode to be multiple-pulse, and umber of pulse is
2-5；
F, silk screen printing form anelectrode, back electrode and back surface field；
G, sintering make to form good Ohmic contact between metal and silicon.
Described step G carries out testing the electrical property of battery after completing.
In described step E, output is 10-40W, and frequency is 400-1000KHz, and frequency is corresponding with umber of pulse, frequently
Rate and umber of pulse product are less than 2000.
Described passivating film is aluminium oxide, silicon nitride or silicon oxide film or the stack membrane of at least a part of which bi-material, film layer
Thickness is 50-300nm.
Described laser equipment is psec, submicrosecond or nanosecond laser.
It is an advantage of the current invention that:
Owing to fluting uses pulse mode to be multiple-pulse, particularly the parameter area of laser is set, so that
Under the conditions of on year-on-year basis, utilize multiple-pulse output gross energy little, reduce silicon substrate and the damage of film layer, the increasing of umber of pulse simultaneously
Adding when making lbg the requirement to film layer planarization to relax, the planarization making fluting position is more preferable, thus decreases the back side
Film layer and the damage of silicon substrate, strengthen passivation effect；The flatness at lbg position is more preferable simultaneously so that silicon substrate can be with
Aluminum back surface field forms good Ohmic contact, thus improves the conversion efficiency of solaode.
Detailed description of the invention
Below in conjunction with detailed description of the invention, the laser pulse method that the present invention carries on the back passivation solaode is made further
Describe in detail.
The laser pulse method of the back of the body passivation solaode of the present invention, comprises the following steps:
A, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
B, diffusion are for PN junction；
Flash trimming knot and surface defect are gone in C, polishing, make back surface smooth；
D, made by ALD, PECVD the positive back side formed passivation film；Passivating film is aluminium oxide, silicon nitride or silicon oxide film
Or the stack membrane of at least a part of which bi-material, thicknesses of layers is 50-300nm；
E, employing laser equipment carry out lbg at back surface, and fluting uses pulse mode to be multiple-pulse, and umber of pulse is
2-5；Its output is 10-40W, and frequency is 400-1000KHz, and frequency is corresponding with umber of pulse, frequency and umber of pulse product
Less than 2000；Described laser equipment is psec, submicrosecond or nanosecond laser.
F, silk screen printing form anelectrode, back electrode and back surface field；
G, sintering make to form good Ohmic contact between metal and silicon.
H, carry out test battery electrical property.
Its comparative example is as follows:
Comparative example one:
A, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
B, diffusion are for PN junction；
Flash trimming knot and surface defect are gone in C, polishing, make back surface smooth；
D, made by ALD, PECVD positive back surface formed passivation film, front is silicon nitride film layer, and thickness is 80nm, the back of the body
Face is aluminium oxide and silicon nitride stack film, and thickness is 130nm；
E, employing picosecond laser carry out lbg at back surface, and fluting uses pulse mode to be pulse, fluting frequency
Rate is 625KHz, and output is 12W.
F, silk screen printing form anelectrode, back electrode and back surface field；
G, sintering make to form good Ohmic contact between metal and silicon；
H, the electrical property of test battery.
Comparative example two:
The laser pulse method of the back of the body passivation solaode of the present embodiment, comprises the following steps:
A, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
B, diffusion are for PN junction；
Flash trimming knot and surface defect are gone in C, polishing, make back surface smooth；
D, made by ALD, PECVD the positive back side formed passivation film；Front is silicon nitride film layer, and thickness is 80nm, the back side
For aluminium oxide and silicon nitride stack film, thickness is 130nm；
E, carrying out lbg at picosecond laser back surface, fluting uses pulse mode to be dipulse, and fluting frequency is
625KHz, output is 12W；
F, silk screen printing form anelectrode, back electrode and back surface field；
G, sintering make to form good Ohmic contact between metal and silicon.
F, carry out test battery electrical property.
Comparative example three:
A, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
B, diffusion are for PN junction；
Flash trimming knot and surface defect are gone in C, polishing, make back surface smooth；
D, made by ALD, PECVD positive back surface formed passivation film, front is silicon nitride film layer, and thickness is 80nm, the back of the body
Face is aluminium oxide and silicon nitride stack film, and thickness is 130nm；
E, employing picosecond laser carry out lbg at back surface, and fluting uses pulse mode to be three pulses, fluting frequency
Rate is 625KHz, and output is 12W.
F, silk screen printing form anelectrode, back electrode and back surface field；
G, sintering make to form good Ohmic contact between metal and silicon；
H, the electrical property of test battery.
The electrical property preparing PERC battery according to the method described above is shown in Table 1, it can be seen that multiple-pulse is imitated compared to pulse
Rate improves 0.2-0.4%, predominantly shows as out pressure and the raising filled, and along with the increase of umber of pulse, opens pressure lifting amplitude fall
Low.
| Pulse mode | Eta | Uoc | Isc | FF | Rs | Rsh |
| Pulse | 20.92 | 0.652 | 9.711 | 79.56 | 0.0020 | 170.22 |
| Dipulse | 21.26 | 0.654 | 9.725 | 80.55 | 0.0018 | 250.12 |
| Three pulses | 21.26 | 0.655 | 9.757 | 80.14 | 0.0019 | 324.81 |
Claims (5)
1. carry on the back a laser pulse method for passivation solaode, comprise the following steps:
A, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
B, diffusion are for PN junction；
Flash trimming knot and surface defect are gone in C, polishing, make back surface smooth；
D, made by ALD, PECVD the positive back side formed passivation film；
E, using laser equipment to carry out lbg at back surface, fluting uses pulse mode to be multiple-pulse, and umber of pulse is 2-5；
F, silk screen printing form anelectrode, back electrode and back surface field；
G, sintering make to form good Ohmic contact between metal and silicon.
2. according to the laser pulse method of the back of the body passivation solaode described in claim 1, it is characterised in that: described step G
Carry out testing the electrical property of battery after completing.
3. according to the laser pulse method of the back of the body passivation solaode described in claim 1 or 2, it is characterised in that: described step
In rapid E, output is 10-40W, and frequency is 400-1000KHz, and frequency is corresponding with umber of pulse, frequency and umber of pulse product
Less than 2000.
4. according to the laser pulse method of the back of the body passivation solaode described in claim 1, it is characterised in that: described passivating film
For aluminium oxide, silicon nitride or silicon oxide film or the stack membrane of at least a part of which bi-material, thicknesses of layers is 50-300 nm.
5. according to the laser pulse method of the back of the body passivation solaode described in claim 1, it is characterised in that: described source, laser apparatus
Standby for psec, submicrosecond or nanosecond laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610683628.5A CN106169518B (en) | 2016-08-17 | 2016-08-17 | A kind of laser pulse method for carrying on the back passivation solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610683628.5A CN106169518B (en) | 2016-08-17 | 2016-08-17 | A kind of laser pulse method for carrying on the back passivation solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106169518A true CN106169518A (en) | 2016-11-30 |
| CN106169518B CN106169518B (en) | 2018-02-16 |
Family
ID=57375857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610683628.5A Active CN106169518B (en) | 2016-08-17 | 2016-08-17 | A kind of laser pulse method for carrying on the back passivation solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106169518B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784164A (en) * | 2017-01-22 | 2017-05-31 | 通威太阳能（成都）有限公司 | A kind of solar cell preparation technology of back side coating film treatment |
| CN107046078A (en) * | 2017-02-22 | 2017-08-15 | 广东爱康太阳能科技有限公司 | It is a kind of to be provided with PERC solar cells of hollow out bar and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN102006964A (en) * | 2008-03-21 | 2011-04-06 | Imra美国公司 | Laser-based material processing methods and systems |
| CN102122685B (en) * | 2011-01-27 | 2013-06-05 | 中山大学 | Method for preparing crystalline silicon solar battery having emitter wrapping structure |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
| CN104245220A (en) * | 2012-01-31 | 2014-12-24 | 太阳能公司 | Laser system with multiple laser pulses for fabrication of solar cells |
-
2016
- 2016-08-17 CN CN201610683628.5A patent/CN106169518B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN102006964A (en) * | 2008-03-21 | 2011-04-06 | Imra美国公司 | Laser-based material processing methods and systems |
| CN102122685B (en) * | 2011-01-27 | 2013-06-05 | 中山大学 | Method for preparing crystalline silicon solar battery having emitter wrapping structure |
| CN104245220A (en) * | 2012-01-31 | 2014-12-24 | 太阳能公司 | Laser system with multiple laser pulses for fabrication of solar cells |
| CN103456837A (en) * | 2013-08-26 | 2013-12-18 | 镇江大全太阳能有限公司 | Method for manufacturing solar cell with local back surface field passivation |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784164A (en) * | 2017-01-22 | 2017-05-31 | 通威太阳能（成都）有限公司 | A kind of solar cell preparation technology of back side coating film treatment |
| CN106784164B (en) * | 2017-01-22 | 2018-05-18 | 通威太阳能（成都）有限公司 | A kind of solar cell preparation process of back side coating film processing |
| CN107046078A (en) * | 2017-02-22 | 2017-08-15 | 广东爱康太阳能科技有限公司 | It is a kind of to be provided with PERC solar cells of hollow out bar and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106169518B (en) | 2018-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106169510B (en) | Solar battery back passivation film structure and preparation method | |
| US20120060911A1 (en) | Solar cell with electroplated metal grid | |
| CN105845775A (en) | Back multilayer coating method of PERC crystalline silicon solar cell | |
| JP6343613B2 (en) | Method for manufacturing silicon solar cell | |
| TW201703277A (en) | Preparation method of localized back contact solar cell | |
| CN103413860A (en) | Preparation method of local region back surface passivated crystalline silicon cell | |
| CN102222729A (en) | Method for improving electroplating quality of front electrode of solar cell | |
| JP5739076B2 (en) | Solar cell module and manufacturing method thereof | |
| CN106169518B (en) | A kind of laser pulse method for carrying on the back passivation solar cell | |
| CN101404296A (en) | Improved solar cell front electrode and its production method | |
| CN102376821A (en) | Passivation process for back of crystalline silicon solar cell and structure of back-passivated crystalline silicon solar cell | |
| CN107978644A (en) | Solar cell | |
| CN104362200A (en) | Efficient crystalline silicon solar cell and production method thereof | |
| CN105304730A (en) | MWT cell with back passive film and preparation method thereof | |
| CN103779473B (en) | LED chip and preparation method thereof, LED | |
| CN203434160U (en) | Large-area silicon bypass diode for solar cell array | |
| CN105374886B (en) | Passivating method | |
| CN104576833A (en) | Method adopting PECVD for preparing back passivation film layer of solar back passivation battery | |
| CN101894884B (en) | Manufacture method of III group nitride nanometer array structure solar battery | |
| CN105185842A (en) | Back composite membrane for back passivation solar cell and preparation method of back composite membrane and back passivation solar cell | |
| TWI615987B (en) | Solar cell and method for manufacturing the same | |
| CN103066158A (en) | Back electric field area contact crystalline silicon solar battery preparation method | |
| CN208797020U (en) | P-type PERC battery structure | |
| CN105047755B (en) | The manufacture method of passivation on double surfaces solaode | |
| JPWO2016153007A1 (en) | Solar cell module and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee after: Jinneng clean energy technology stock company Address before: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Patentee before: Jin Neng Clean-tech Co., Ltd |