CN106158811B - A kind of multi-layer support structure and its manufacturing method - Google Patents
A kind of multi-layer support structure and its manufacturing method Download PDFInfo
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- CN106158811B CN106158811B CN201610707982.7A CN201610707982A CN106158811B CN 106158811 B CN106158811 B CN 106158811B CN 201610707982 A CN201610707982 A CN 201610707982A CN 106158811 B CN106158811 B CN 106158811B
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Abstract
The present invention relates to a kind of multi-layer support structure and its manufacturing methods, the structure includes pin, the pin includes first layer characteristic layer (1), second layer characteristic layer (2) and third layer characteristic layer (3), the second layer characteristic layer (2) and third layer characteristic layer (3) are formed by once plating, the third layer characteristic layer (3) is not less than first layer characteristic layer (1), the first layer characteristic layer (1), second layer characteristic layer (2) and third layer characteristic layer (3) are coated with dielectric material (4), third layer characteristic layer (3) surface is provided with microetch fluting (5).A kind of multi-layer support structure of the present invention and its manufacturing method, it solves the disadvantage that traditional handicraft cannot achieve or cost period disadvantage, and the thickness of product can accomplish it is ultra-thin, to substantially increase product competitive advantage in the market.
Description
Technical field
The present invention relates to a kind of multi-layer support structure and its manufacturing methods, belong to technical field of semiconductor encapsulation.
Background technique
Current semicon industry, become increasingly complex demand its size of electronic component is smaller and smaller, such as computer and electricity
Believe that the integrated level of the consumer electronics such as equipment is higher and higher, need support construction such as printed wiring board that there is high density and passes through dielectric
Multiple conductive layers that material is electrically insulated from each other.
General requirement for this support construction is reliability and electric property appropriate, thinness, hardness, smooth
Degree, excellent thermal diffusivity and competitive unit price.
The production of support construction may be implemented there are many production method at present, wherein there is a kind of relatively new type wiring board logical
Solid copper pin interconnection conducting is crossed, is easier to control and can by way of setting electroplated layer interconnection conducting in dielectric hole than traditional
More preferable by property, therefore, the interconnection conduction mode of solid copper pin more uses in multilayer electronic structure.
Traditional interconnects the method that conduction mode makes multi-layer support structure by solid copper pin, and need: 1. the bottom of at
Photoresist layer is covered on plate, 2. exposure developments form the negativity characteristic pattern of required figure, and 3. plating obtain first layer characteristic layer,
4. continuing to cover photoresist layer, 5. exposure developments form the negativity characteristic pattern of required figure, and 6. plating obtain second layer feature
Layer, 7. removal photoresist layers, 8. use dielectric material filling bag metal-clad, and to expose metal layer, 10. cover light again for 9. grindings
Photoresist layer, 11. expose and are developed in the pattern for being formed on bottom plate and needing to expose metal covering, and 12. etch to expose metal layer image,
13. surface treatment, as shown in Figure 1, this technique is by energy power limit, it must assure that multi-layer support structure obtained
Second layer characteristic layer metal surface is smaller than first layer, so that the design of metal covering same size cannot achieve inside and outside many demands.
Thus there is a upgraded version of this technique, 1 ~ 9 with above-mentioned 1 ~ 9 step, 10. second feature level whole face deposited metals, and 11.
Photoresist layer is covered, 12. exposure developments obtain the negativity figure of third layer metallic pattern, and 13. plating obtain third layer metal layer,
14. covering photoresist layer, 15. exposure developments obtain the negativity figure of the 4th layer of metallic pattern, and 16. plating obtain the 4th layer of gold
Belong to layer, 17 remove photoresist layer, and 18. coat characteristic metal layer using dielectric material, and 19. grindings are to expose metal layer, 20. tables
Surface treatment, multi-layer support structure obtained is as shown in Fig. 2, the first above-mentioned technique cannot achieve customer drawings or more
The demand of metal layer similar size, and second process flow production cycle, low cost materials are one times all relatively more, lack cost
Advantage.
Summary of the invention
The technical problem to be solved by the present invention is to for the above-mentioned prior art provide a kind of multi-layer support structure and
Its manufacturing method, it solves the disadvantage that traditional handicraft cannot achieve or cost period disadvantage, and the thickness of product can be done
To ultra-thin, to substantially increase product competitive advantage in the market.
The present invention solves the above problems used technical solution are as follows: and a kind of multi-layer support structure, it includes pin,
The pin includes first layer characteristic layer, second layer characteristic layer and third layer characteristic layer, the second layer characteristic layer and third layer
Characteristic layer is formed by once plating, and the third layer characteristic layer is not less than first layer characteristic layer, the first layer characteristic layer, the
Two layers of characteristic layer and third layer characteristic layer are coated with dielectric material, and it is recessed that the third layer feature layer surface is provided with microetch
Slot.
Protruding features layer is set on the microetch fluting.
A kind of manufacturing method of multi-layer support structure, described method includes following steps:
Step 1: taking a metal plate as bottom plate；
Step 2: covering photoresist layer on bottom plate, exposing and being developed in needed for bottom plate front formation first layer characteristic layer
The negativity characteristic pattern of figure；
Step 3: plating is to make fisrt feature layer；
Step 4: continuing to second layer photoresist layer, exposing and being developed in bottom plate front formation second layer characteristic layer institute
Need the negativity characteristic pattern of figure；
Step 5: continuing to third layer photoresist layer, exposing and being developed in bottom plate front formation third layer characteristic layer institute
Need the negativity characteristic pattern of figure；
Step 6: primary be electroplated while making second and third layer of characteristic layer；
Step 7: removal photoresist layer；
Step 8: coating all characteristic layers with dielectric material；
Step 9: grinding dielectric material face is to expose outermost layer feature layer pattern；
Step 10: two sides covers photoresist layer, the pattern that the bottom plate back side forms the required figure that opens a window, erosion are exposed and are developed in
Windowing is carved to expose the figure of first layer characteristic layer；
Step 11: removal photoresist layer；
Step 12: surface treatment.
The step 5 repeats repeatedly.
The surface treatment mode of the step 12 is to form groove by microetch in outermost layer feature layer surface.
Recess region carries out plating and forms protruding features layer.
Compared with the prior art, the advantages of the present invention are as follows:
A kind of multi-layer support structure of the present invention and its manufacturing method, it solve prior art long flow path, encapsulation it is thick, at
This high problem.From the point of view of manufacture craft, it makes substrate using pre-packaged method, optimizes in original technique, no
The needs for being same as original process are pre-packaged twice, it is only necessary to once pre-packaged that the identical need of inside and outside lead layer pattern can be thus achieved
It asks, original production cost, production cycle can reduce half, and the thickness of product can also be accomplished thinner, solve tradition
Technique cannot achieve or the shortcomings that cost period disadvantage；From the point of view of product structure, it realizes inside and outside trace layer same size
Design, to save wiring space, so that package dimension is smaller, realizes higher integrated level；And due to inside and outside metal
The area of layer is both greater than metallic intermediate layer, and metal is enabled to form stronger supporting role with dielectric material, is formed superior
Lock colloidality energy.High integration, ultrathin, smaller szie, superior lock colloidality energy and the process flow of the structure of the invention
Optimization, the production cycle, cost reduction so that product competitive advantage greatly improves in the market.
Detailed description of the invention
Fig. 1 is the schematic diagram for the multi-layer support structure that traditional solid copper pin interconnects conduction mode production.
Fig. 2 is the signal of the multi-layer support structure for the upgrading process production that traditional solid copper pin interconnects conduction mode
Figure.
Fig. 3 is a kind of schematic diagram of multi-layer support structure of the present invention.
Fig. 4 ~ Figure 16 is a kind of each process flow chart of multi-layer support structure manufacturing method of the present invention.
Wherein:
First layer characteristic layer 1
Second layer characteristic layer 2
Third layer characteristic layer 3
Dielectric material 4
Microetch fluting 5.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
As shown in figure 3, one of the present embodiment multi-layer support structure, it includes pin, and the pin includes the
One layer of characteristic layer 1, second layer characteristic layer 2 and third layer characteristic layer 3, the second layer characteristic layer 2 and third layer characteristic layer 3 pass through
Primary plating is formed, and the third layer characteristic layer 3 is not less than first layer characteristic layer 1, and the first layer characteristic layer 1, the second layer are special
Sign layer 2 and third layer characteristic layer 3 are coated with dielectric material 4, and 3 surface of third layer characteristic layer is provided with microetch fluting 5；
Protruding features layer is set on the microetch fluting 5.
Its manufacturing method is as follows:
Step 1: referring to fig. 4, taking a metal plate as bottom plate；
Step 2: covering photoresist layer on bottom plate referring to Fig. 5, exposing and being developed in bottom plate front formation first layer and is special
The negativity characteristic pattern of figure needed for levying layer；
Step 3: being electroplated referring to Fig. 6 to make fisrt feature layer；
Step 4: continuing to second layer photoresist layer referring to Fig. 7, exposing and being developed in the bottom plate front formation second layer
The negativity characteristic pattern of figure needed for characteristic layer；
Step 5: continuing to third layer photoresist layer referring to Fig. 8, exposing and being developed in bottom plate front formation third layer
The negativity characteristic pattern of figure needed for characteristic layer；
Step 6: referring to Fig. 9, it is primary to be electroplated while making second and third layer of characteristic layer；
Step 7: removing photoresist layer referring to Figure 10；
Step 8: coating all characteristic layers with dielectric material referring to Figure 11；
Step 9: grinding dielectric material face referring to Figure 12 to expose outermost layer feature layer pattern；
Step 10: two sides covers photoresist layer referring to Figure 13, exposes and be developed in figure needed for the bottom plate back side forms windowing
Pattern, etching windowing is to expose the figure of first layer characteristic layer；
Step 11: removing photoresist layer referring to Figure 14；
Step 12: forming groove by microetch in outermost layer feature layer surface referring to Figure 15；
Step 13: recess region carries out plating and forms protruding features layer referring to Figure 16.
The step 5 may be repeated repeatedly, thus the characteristic layer of more numbers of plies；
Add two kinds of surface treatment modes of step 13 that can make outermost layer feature respectively by step 12 or step 12
The structure that layer realization is fallen in or protrusion is come.
In addition to the implementation, all to use equivalent transformation or equivalent replacement the invention also includes there is an other embodiments
The technical solution that mode is formed should all be fallen within the scope of the hereto appended claims.
Claims (4)
1. a kind of manufacturing method of multi-layer support structure, it is characterised in that described method includes following steps:
Step 1: taking a metal plate as bottom plate；
Step 2: covering photoresist layer on bottom plate, exposing and being developed in figure needed for bottom plate front forms first layer characteristic layer
Negativity characteristic pattern；
Step 3: plating is to make fisrt feature layer；
Step 4: continuing to second layer photoresist layer, exposes and be developed in bottom plate front and formed needed for second layer characteristic layer and scheme
The negativity characteristic pattern of shape；
Step 5: continuing to third layer photoresist layer, exposes and be developed in bottom plate front and formed needed for third layer characteristic layer and scheme
The negativity characteristic pattern of shape；
Step 6: primary be electroplated while making second and third layer of characteristic layer；
Step 7: removal photoresist layer；
Step 8: coating all characteristic layers with dielectric material；
Step 9: grinding dielectric material face is to expose outermost layer feature layer pattern；
Step 10: two sides covers photoresist layer, the pattern that the bottom plate back side forms the required figure that opens a window is exposed and be developed in, is etched open
Window is to expose the figure of first layer characteristic layer；
Step 11: removal photoresist layer；
Step 12: surface treatment.
2. a kind of manufacturing method of multi-layer support structure according to claim 1, it is characterised in that: the step 5
Repeat repeatedly.
3. a kind of manufacturing method of multi-layer support structure according to claim 1, it is characterised in that: the step 10
Two surface treatment mode is to form groove by microetch in outermost layer feature layer surface.
4. a kind of manufacturing method of multi-layer support structure according to claim 3, it is characterised in that: recess region into
Row plating forms protruding features layer.
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| CN201610707982.7A CN106158811B (en) | 2016-08-23 | 2016-08-23 | A kind of multi-layer support structure and its manufacturing method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052268A (en) * | 2011-10-11 | 2013-04-17 | 欣兴电子股份有限公司 | Method for making circuit structure |
| CN103400770A (en) * | 2013-08-06 | 2013-11-20 | 江苏长电科技股份有限公司 | Packaging-prior-to-etching chip-flipped bump type three-dimensional system-level metal circuit board and process method thereof |
| CN205984970U (en) * | 2016-08-23 | 2017-02-22 | 江阴芯智联电子科技有限公司 | Multilayer electron bearing structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4803844B2 (en) * | 2008-10-21 | 2011-10-26 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Semiconductor package |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103052268A (en) * | 2011-10-11 | 2013-04-17 | 欣兴电子股份有限公司 | Method for making circuit structure |
| CN103400770A (en) * | 2013-08-06 | 2013-11-20 | 江苏长电科技股份有限公司 | Packaging-prior-to-etching chip-flipped bump type three-dimensional system-level metal circuit board and process method thereof |
| CN205984970U (en) * | 2016-08-23 | 2017-02-22 | 江阴芯智联电子科技有限公司 | Multilayer electron bearing structure |
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