CN106145959A - 一种氧化镥透明陶瓷的制备方法 - Google Patents
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Abstract
本发明公开了一种氧化镥透明陶瓷的制备方法。该方法包括如下步骤:以水合硝酸镥和硫脲为原料,采用低温燃烧法制备获得纳米硫氧化镥(Lu2O2S)粉体;将所得硫氧化镥纳米粉体研磨、干压成型,于900‑1000℃空气烧结和1400‑1500℃真空烧结,得到氧化镥透明陶瓷。本发明的制备方法具有烧结温度低,成本低,易于操作等优点,制备出的氧化镥陶瓷致密度高、透光度好。
Description
技术领域
本发明涉及一种氧化镥透明陶瓷的制备方法,具体属于陶瓷材料制备技术领域。
背景技术
氧化镥Lu2O3是一种极有前途的激光与闪烁体基质材料,在可见光与红外光下均具有高透过率,其发射截面大,声子能量低,密度高,同时具有良好的机械性能与热性能。然而Lu2O3熔点高 达2450℃,采用提拉法生长含各种掺杂组分的单晶材料不仅工艺难实现,而且代价相当高。Lu2O3具有立方晶系结构,光学各向同性,折射率不依赖于方向性,可通过纳米晶技术和高温烧结技术将粉体制成透明陶瓷。因此研制氧化镥基透明陶瓷材料是这类材料获得应用的关键。而获得透明陶瓷材料的关键是先制备烧结性能优异的前驱粉体,要求粉体具有良好的分散性、粒径小、球形形貌等,低温燃烧法是达到这一目的的可行方法之一。
近年来,Lu2O3基透明陶瓷的研究已经得到了极大的关注。例如,A.Lempicki等人用草酸盐沉淀法合成Eu3+掺杂的Lu2O3陶瓷闪烁体,由于草酸盐Ksp较大,采用草酸盐沉淀法获得粉体颗粒尺寸较大,而且极易团聚;E.Zych等利用尿素作燃料用溶液燃烧法合成RE3+掺杂的Lu2O3发光粉体,然后真空烧结,仅能获得半透明的陶瓷样品,这是因为燃烧合成粉体团聚严重,烧结活性低;发明专利1510813014.X以氟化锂和氧化锆为烧结助剂,经成型和1850℃真空烧结得到Lu2O3基透明陶瓷,透过率超过80%,由于加入了烧结助剂,影响和降低了其发光性能;发明专利CN200510027208.3用沉淀法获得Lu2O3纳米粉体,然后经成型和1850℃真空烧结得到Lu2O3基透明陶瓷,所用烧结温度太高,成本较高。因此,发明一种新的Lu2O3基透明陶瓷材料的制备方法是非常有实际意义的。
发明内容
本发明的目的在于提供一种氧化镥透明陶瓷的制备方法,具体通过以下技术方案实现。
本发明公开了一种氧化镥透明陶瓷的制备方法,包括如下步骤:
将水合硝酸镥2.274g溶于50ml水中,得溶液A;将乙二醇5ml和硫脲1.37g分别加入到溶液A中,磁力搅拌,得均匀混合溶液B,将混合液B置于500℃马弗炉中,燃烧完毕后得到硫氧化镥纳米粉体;水合硝酸镥与硫脲摩尔比为1:3-4,乙二醇与水的体积比为1:10-15。
将步骤(1)所得的硫氧化镥粉体研磨30min,50Mpa双向轴压成型为陶瓷生胚片;将陶瓷生胚片于马弗炉中900-1000℃空气气氛下烧结10-15h,再于真空炉中1400-1500℃烧结2h,最后在马弗炉中900-1000℃空气气氛下退火5-6h,制得氧化镥透明陶瓷。
本发明的有益效果:本发明公开的氧化镥透明陶瓷的制备方法采用了自制的硫氧化镥Lu2O2S纳米粉作为陶瓷粉体原料,在1000℃马弗炉中烧结过程中,硫氧化镥被氧化成氧化镥Lu2O3,再将陶瓷胚片于1400-1500℃真空炉中高温烧结,可以进一步消除陶瓷片内的气孔,使颗粒长大,并提高陶瓷致密度,最后在900℃马弗炉中退火是为了消除真空烧结产生的氧空位,提高陶瓷透光度。该方法使用了三步烧结(退火)法,大大缩短了高温真空烧结的时间(通常高温真空烧结时间为6-10h),降低了成本,有利于氧化镥基透明陶瓷材料的(半)工业化生产。
附图说明
图1为本发明氧化镥透明陶瓷实物照片。
具体实施方式
实施例1
一种氧化镥透明陶瓷的制备方法,包括以下步骤:
将水合硝酸镥2.274g溶于50ml水中,得溶液A;将乙二醇5ml和硫脲1.37g分别加入到溶液A中,磁力搅拌,得均匀混合溶液B,将混合液B置于500℃马弗炉中,燃烧完毕后500℃退火1h,得到硫氧化镥Lu2O2S纳米粉体;
将步骤(1)所得的硫氧化镥粉体研磨30min,50Mpa双向轴压成型为陶瓷生胚片;将陶瓷生胚于马弗炉中1000℃空气气氛下烧结10h,再于真空炉中1400℃烧结2h,最后在马弗炉中900℃空气气氛下退火5h,制得氧化镥Lu2O3透明陶瓷。
Claims (1)
1.一种氧化镥透明陶瓷的制备方法,其特征在于:所述的制备方法包括以下步骤:
(1) 将水合硝酸镥2.274g溶于50ml水中,得溶液A;将乙二醇5ml和硫脲1.37g分别加入到溶液A中,磁力搅拌,得均匀混合溶液B,将混合液B置于500℃马弗炉中,燃烧完毕后得到硫氧化镥纳米粉体;水合硝酸镥与硫脲摩尔比为1:3-4,乙二醇与水的体积比为1:10-15;
(2)将步骤(1)所得的硫氧化镥粉体研磨30min,50Mpa双向轴压成型为陶瓷生胚片;将陶瓷生胚片于马弗炉中900-1000℃空气气氛下烧结10-15h,再于真空炉中1400-1500℃烧结2h,最后在马弗炉中900-1000℃空气气氛下退火5-6h,制得氧化镥透明陶瓷。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1760327A (zh) * | 2005-06-28 | 2006-04-19 | 中国科学院上海硅酸盐研究所 | 氧化镥基纳米荧光粉体及其溶液燃烧合成方法 |
CN1760157A (zh) * | 2005-06-28 | 2006-04-19 | 中国科学院上海硅酸盐研究所 | 一种氧化镥基透明陶瓷的制备方法 |
CN101333110A (zh) * | 2008-07-16 | 2008-12-31 | 上海大学 | Nd3+离子掺杂的Lu2O3透明激光陶瓷的制备方法 |
CN102464348A (zh) * | 2010-11-18 | 2012-05-23 | 中国科学院福建物质结构研究所 | 一种氧化镥纳米粉体的水热制备方法 |
CN102838352A (zh) * | 2005-12-13 | 2012-12-26 | 通用电气公司 | 多晶透明陶瓷制品及其制造方法 |
CN105693246A (zh) * | 2016-03-11 | 2016-06-22 | 九江学院 | 一种氧化钇透明陶瓷的制备方法 |
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Patent Citations (6)
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CN1760327A (zh) * | 2005-06-28 | 2006-04-19 | 中国科学院上海硅酸盐研究所 | 氧化镥基纳米荧光粉体及其溶液燃烧合成方法 |
CN1760157A (zh) * | 2005-06-28 | 2006-04-19 | 中国科学院上海硅酸盐研究所 | 一种氧化镥基透明陶瓷的制备方法 |
CN102838352A (zh) * | 2005-12-13 | 2012-12-26 | 通用电气公司 | 多晶透明陶瓷制品及其制造方法 |
CN101333110A (zh) * | 2008-07-16 | 2008-12-31 | 上海大学 | Nd3+离子掺杂的Lu2O3透明激光陶瓷的制备方法 |
CN102464348A (zh) * | 2010-11-18 | 2012-05-23 | 中国科学院福建物质结构研究所 | 一种氧化镥纳米粉体的水热制备方法 |
CN105693246A (zh) * | 2016-03-11 | 2016-06-22 | 九江学院 | 一种氧化钇透明陶瓷的制备方法 |
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