CN106133916B - 太阳能电池光接收表面的钝化 - Google Patents

太阳能电池光接收表面的钝化 Download PDF

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Publication number
CN106133916B
CN106133916B CN201580003357.8A CN201580003357A CN106133916B CN 106133916 B CN106133916 B CN 106133916B CN 201580003357 A CN201580003357 A CN 201580003357A CN 106133916 B CN106133916 B CN 106133916B
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CN
China
Prior art keywords
layer
silicon layer
receiving surface
substrate
solar cell
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Active
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CN201580003357.8A
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English (en)
Chinese (zh)
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CN106133916A (zh
Inventor
林承笵
吉娜维芙·A·所罗门
迈克尔·C·约翰逊
热罗姆·达蒙-拉科斯特
安托万·玛里·奥利维耶·萨洛蒙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TotalEnergies Marketing Services SA
SunPower Corp
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Total Marketing Services SA
SunPower Corp
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Priority to CN201910999294.6A priority Critical patent/CN110808293A/zh
Publication of CN106133916A publication Critical patent/CN106133916A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201580003357.8A 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化 Active CN106133916B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910999294.6A CN110808293A (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/226,368 US20150280018A1 (en) 2014-03-26 2014-03-26 Passivation of light-receiving surfaces of solar cells
US14/226,368 2014-03-26
PCT/US2015/022331 WO2015148568A1 (en) 2014-03-26 2015-03-24 Passivation of light-receiving surfaces of solar cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910999294.6A Division CN110808293A (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化

Publications (2)

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CN106133916A CN106133916A (zh) 2016-11-16
CN106133916B true CN106133916B (zh) 2019-11-12

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CN201910999294.6A Pending CN110808293A (zh) 2014-03-26 2015-03-24 太阳能电池光接收表面的钝化

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Country Status (8)

Country Link
US (2) US20150280018A1 (https=)
JP (1) JP2017509153A (https=)
KR (2) KR20160138183A (https=)
CN (2) CN106133916B (https=)
AU (2) AU2015236203A1 (https=)
DE (1) DE112015001440T5 (https=)
TW (1) TWI675490B (https=)
WO (1) WO2015148568A1 (https=)

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CN109983586B (zh) * 2016-11-03 2024-03-12 道达尔销售服务公司 太阳能电池的表面处理
KR101995833B1 (ko) * 2016-11-14 2019-07-03 엘지전자 주식회사 태양 전지 및 이의 제조 방법
WO2018112067A1 (en) * 2016-12-16 2018-06-21 Sunpower Corporation Plasma-curing of light-receiving surfaces of solar cells
CN115692544B (zh) * 2021-07-28 2025-09-23 环晟光伏(江苏)有限公司 一种Topcon电池钝化结构的制备方法

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US20090215218A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Method for making solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US20120145233A1 (en) * 2010-10-11 2012-06-14 Lg Electronics Inc. Back contact solar cell and manufacturing method thereof
US20130157404A1 (en) * 2009-09-23 2013-06-20 Silevo, Inc. Double-sided heterojunction solar cell based on thin epitaxial silicon

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JPH06163952A (ja) * 1992-11-26 1994-06-10 Kyocera Corp 太陽電池素子
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JP3281760B2 (ja) * 1995-04-26 2002-05-13 三洋電機株式会社 光起電力装置の製造方法
JP4197193B2 (ja) * 1996-07-08 2008-12-17 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP4070483B2 (ja) * 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
NL1030200C2 (nl) * 2005-10-14 2007-04-17 Stichting Energie Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen.
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US20090215218A1 (en) * 2008-02-25 2009-08-27 Suniva, Inc. Method for making solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation
US20130157404A1 (en) * 2009-09-23 2013-06-20 Silevo, Inc. Double-sided heterojunction solar cell based on thin epitaxial silicon
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Also Published As

Publication number Publication date
US20190051769A1 (en) 2019-02-14
JP2017509153A (ja) 2017-03-30
DE112015001440T5 (de) 2017-01-26
US20150280018A1 (en) 2015-10-01
TW201611309A (zh) 2016-03-16
WO2015148568A1 (en) 2015-10-01
AU2015236203A1 (en) 2016-06-16
CN106133916A (zh) 2016-11-16
TWI675490B (zh) 2019-10-21
AU2019283886A1 (en) 2020-01-23
KR20210043013A (ko) 2021-04-20
CN110808293A (zh) 2020-02-18
KR20160138183A (ko) 2016-12-02

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