CN106128915B - A kind of helix TWT integral high frequency structure and the preparation method of the high-frequency structure - Google Patents
A kind of helix TWT integral high frequency structure and the preparation method of the high-frequency structure Download PDFInfo
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- CN106128915B CN106128915B CN201610554731.XA CN201610554731A CN106128915B CN 106128915 B CN106128915 B CN 106128915B CN 201610554731 A CN201610554731 A CN 201610554731A CN 106128915 B CN106128915 B CN 106128915B
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- supporting rod
- helix
- metallization
- frequency structure
- shell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/36—Coupling devices having distributed capacitance and inductance, structurally associated with the tube, for introducing or removing wave energy
- H01J23/40—Coupling devices having distributed capacitance and inductance, structurally associated with the tube, for introducing or removing wave energy to or from the interaction circuit
- H01J23/42—Coupling devices having distributed capacitance and inductance, structurally associated with the tube, for introducing or removing wave energy to or from the interaction circuit the interaction circuit being a helix or a helix-derived slow-wave structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microwave Tubes (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of helix TWT integral high frequency structure and the preparation method of the high-frequency structure, the high-frequency structure includes helix, supporting rod and shell；The first metallization coating by exposure photo-etching and metallization is provided with the madial wall of the supporting rod corresponding with the helix, the lateral wall of the helix welds connection with the first metallization coating on the madial wall of the supporting rod by pressure diffusion；The madial wall of the lateral wall of the supporting rod and the shell is connected.Helix TWT high-frequency structure provided by the present invention, reduce the thermal contact resistance between supporting rod, helix and shell three, improve the heat dispersion of travelling-wave tubes.
Description
Technical field
The present invention relates to vacuum electron device field, more particularly to a kind of helix TWT with integral high frequency structure and
The preparation method of the high-frequency structure.
Background technology
Travelling-wave tubes is the core devices of the electronic information military equipment such as radar, communication, guidance and electronic countermeasure, mainly plays work(
The effect of rate amplification.Travelling-wave tubes is quite varied in China's Military Electronics systematic difference, including all kinds of fighter planes, bomber, nothing
Man-machine, naval vessel and satellite system etc..
From the point of view of demand, military equipment proposes higher requirement to high-power millimeter wave helix TWT, it is desirable to its
To high-power, broadband and millimeter wave above frequency band expanding.
With the continuous improvement that military equipment is required travelling-wave tubes, the development of large-power broadband millimeter wave travelling-wave tubes is restricted
Problem is gradually exposed.Be mainly manifested in that power capacity is low, bandwidth is not wide etc. enough, and at present millimeter wave traveling wave tube power,
The bottleneck faced in bandwidth causes related military equipment to be difficult to meet higher level task needs.
The high-frequency structure (being also slow-wave structure) of helix TWT is the core of pipe, and it directly determines the defeated of pipe
Go out power and stability.As shown in figure 1, conventional slow-wave structure is made up of Can 3 ', supporting rod 2 ' and helix 1 ', adopt
They are fixed together with different method of clamping.No matter take which kind of method of clamping, conventional helix and supporting rod it
Between be all Hard link, small plus contact area, the interface resistance of the two is bigger, the obstruction that the thermal resistance of contact position is conducted to heat
Effect is maximum, makes the heat of helix be difficult to conduct.To reduce interface resistance, helix and supporting rod are welded on by someone
Together, method is that helix and supporting rod are plated into metal film, then welded together supporting rod and helix, again finally
Pickling removes metal unnecessary on supporting rod.The shortcomings that this method, is that unnecessary metal is difficult to remove clean, high-frequency loss
Increase, in addition, the acid solution of cleaning can also corrode solder joint, reduce weld strength.Another method, it is by helix plating metal
Slow-wave component is formed after copper with supporting rod diffusion welding (DW) again.Although this method has abandoned the shortcomings that supporting rod entirety plated film welds again,
But because supporting rod is without being still Hard link between metallization, with helix, the effect of actual dispersion weldering is poor.This
Outside, because the contact surface of helix and supporting rod is curved surface, efficient weld area very little between the two, especially for millimeter
Ripple travelling-wave tubes, the reducing effect of interface resistance are limited.
It is poor for existing clipping helix TWT high frequency heat dispersion, present situation that power output is restricted, it is necessary to
A kind of new helix TWT integral high frequency structure and the manufacturing process of the high-frequency structure are proposed, and then is fundamentally solved
The problem of certainly its interface contact heat resistance is high.
The content of the invention
The invention solves first technical problem be to provide a kind of helix TWT integral high frequency structure, should
High-frequency structure is by the exposure photo-etching on supporting rod and sets metallization coating so that shell, supporting rod and helix three welding
The high-frequency structure of helix TWT is formed together, and the high-frequency structure reduces the thermal contact resistance between three, improved
The heat dispersion of travelling-wave tubes.
The invention solves second technical problem be to provide a kind of helix TWT integral high frequency structure
Preparation method.Helix is plated and is suitable for by being exposed photoetching and fixed point metallization coating to supporting rod by this method
The metallization coating of pressure diffusion weldering connection, then by way of pressure diffusion weldering connection, by supporting rod, helix and shell three
Person welds together, the helix TWT high-frequency structure obtained by this method, reduces the interface resistance of high-frequency structure,
And while helix TWT heat dispersion is improved, helix TWT is improved, particularly millimeter involves band above
The performances such as the power output of travelling-wave tubes.
To solve above-mentioned first technical problem, the present invention uses following technical proposals：
A kind of helix TWT integral high frequency structure, the high-frequency structure include helix, supporting rod and shell；
It is provided with what is passed through exposure photo-etching and metallize on the madial wall of the supporting rod corresponding with the helix
First metallization coating, the lateral wall of the helix pass through pressure with the first metallization coating on the madial wall of the supporting rod
Power diffusion welding (DW) connects；The madial wall of the lateral wall of the supporting rod and the shell is connected.
Further, the lateral wall of the supporting rod is provided with the second metallization coating, on the lateral wall of the supporting rod
The madial wall of the second metallization coating and shell pass through pressure diffusion weldering and connect.
Further, the 3rd metallization is provided with the lateral wall of the helix corresponding with the supporting rod to plate
Layer；3rd metallization coating is welded by pressure diffusion with the first metallization coating on the madial wall of the supporting rod and connected.
Further, the thickness of the first metallization coating is 0.5-10 μm；The thickness of the second metallization coating
For 0.5-10 μm；The thickness of the 3rd metallization coating is 1-10 μm.
Further, the shell is the shell of metal material.
To solve above-mentioned second technical problem, the present invention uses following technical proposals：
A kind of preparation method of helix TWT integral high frequency structure, this method comprise the following steps：
S1, the supporting rod madial wall exposure photo-etching corresponding with the helix, and obtain pad patterns；
S2, it is graphical after the metallization of supporting rod madial wall, obtain the first metallization coating；
S3, supporting rod madial wall remove remaining photoresist；
S6, using jig helix, supporting rod and shell are assembled and positioned；
S7, using extrusion helix and supporting rod are assembled in shell；And connection is welded by pressure diffusion and obtains one
Body high-frequency structure.
Further, this method further comprises the following steps：
S4, supporting rod lateral wall metallization, obtain the second metallization coating.
Further, this method further comprises the following steps：
S5, the helix lateral wall corresponding with supporting rod metallization, obtain the 3rd metallization coating.
Further, the madial wall of the second metallization coating and the shell on the lateral wall of the supporting rod passes through pressure
Power diffusion welding (DW) connects.
Further, the 3rd metallization coating passes through with the first metallization coating on the madial wall of the supporting rod
Pressure diffusion weldering connection.
Helix is plated by being exposed photoetching and fixed point metallization coating to supporting rod and is suitable for pressing by the present invention
The metallization coating of power diffusion welding (DW) connection, then by way of pressure diffusion weldering connection, by supporting rod, helix and shell three
Weld together, the helix TWT high-frequency structure obtained by method provided by the invention, with existing high frequency knot
Structure is compared, and reduces the interface resistance of high-frequency structure, the heat dissipation problem for effectively solving helix TWT, and is improving spiral shell
While spin line travelling-wave tubes heat dispersion, improve helix TWT, particularly millimeter and involve the defeated of band above travelling-wave tubes
Go out the performances such as power.
Brief description of the drawings
Fig. 1 is the structural representation of conventional helices travelling-wave tubes high-frequency structure.
Fig. 2 is the structural representation of helix TWT high-frequency structure in first embodiment of the invention.
Fig. 3 is A portions enlarged diagram in Fig. 2.
Fig. 4 is the preparation method flow chart of helix TWT high-frequency structure in first embodiment of the invention.
Fig. 5 is the structural representation of helix TWT high-frequency structure in second embodiment of the invention.
Fig. 6 is the preparation method flow chart of helix TWT high-frequency structure in second embodiment of the invention.
Embodiment
Illustrate the embodiment of the present invention below in conjunction with the accompanying drawings.
As shown in Figure 2,3, 4, a kind of helix TWT integral high frequency structure, the high-frequency structure include helix
1st, supporting rod 2 and shell 3；
It is provided with by exposure photo-etching and metallizes on the madial wall of the supporting rod 2 corresponding with the helix 1
First metallization coating 21, specifically, the madial wall exposure photo-etching of supporting rod 2, obtains pad patterns；Supporting rod after graphical
Madial wall metallizes to obtain the first metallization coating 21, and the method for metallising of the first metallization coating 21 uses magnetron sputtering or electricity
The methods of beamlet evaporates, the coating material of the first metallization coating 21 is gold or copper etc., and its thickness is 0.5-10 μm；
The lateral wall of the supporting rod 2 is provided with the second metallization coating 22, the metallization side of the second metallization coating 22
Method uses the methods of magnetron sputtering or electron beam evaporation, and the coating material of the second metallization coating 22 is gold or copper etc., and it is thick
Spend for 0.5-10 μm；
On the lateral wall of the helix 1 corresponding with the supporting rod 2 be provided with the 3rd metallization coating 11, the 3rd
The methods of method for metallising of metallization coating 11 is using magnetron sputtering or plating, the coating material of the 3rd metallization coating 11
For gold or copper etc., its thickness is 1-10 μm；The 3rd metallization coating 11 and the supporting rod on the lateral wall of the helix 1
The first metallization coating 21 on 2 madial wall is welded by pressure diffusion to be connected；The second gold medal on the lateral wall of the supporting rod 2
The madial wall of categoryization coating 22 and the shell 3 is welded by pressure diffusion to be connected.
A kind of preparation method for being used for above-mentioned helix TWT integral high frequency structure in the present embodiment, this method bag
Include following steps：
S1, the supporting rod 2 madial wall exposure photo-etching corresponding with the helix 1, and obtain pad patterns；Specifically,
According to the width and pitch of helix 1, pad patterns are determined.Assuming that the helix of uniform helical pitch, pad patterns are between a row waits
Rectangle away from arrangement, the length and width of rectangle are respectively the width of helix and the width of supporting rod, and the spacing of each rectangle is spiral
Line pitch.
S2, it is graphical after the metallization of the madial wall of supporting rod 2, obtain the first metallization coating 21；
S3, the madial wall of supporting rod 2 remove remaining photoresist；
S4, supporting rod 2 lateral wall metallization, obtain the second metallization coating 22.
S5, helix 1 lateral wall corresponding with the supporting rod 2 metallization, obtain the 3rd metallization coating 11.
S6, using jig helix 1, supporting rod 2 and shell 3 are assembled and positioned；
S7, using extrusion helix 1 and supporting rod 2 are assembled in shell 3；And connection is welded by pressure diffusion and obtained
The high-frequency structure of integration；On the madial wall of the 3rd metallization coating 11 and the supporting rod 2 i.e. on the lateral wall of helix 1
First metallization coating 21 pass through pressure diffusion weldering connection；The second metallization coating 22 and pipe on the lateral wall of supporting rod 2
The madial wall of shell 3 is connected by pressure diffusion weldering.Wherein pressure diffusion weldering technological parameter be：650 DEG C of welding temperature-
1000 DEG C, weld interval 1-60min, vacuum 1 × 10 during welding-3-1×10-5Pa。
Further, the concrete technology of pressure diffusion weldering is to load the high-frequency structure assembled in diffusion welding mould,
With 750 DEG C of welding temperature in hydrogen furnace, 30min is welded, vacuum is 1 × 10 in stove during welding-4Pa。
Embodiment 2：
As shown in Figure 5,6, a kind of helix TWT integral high frequency structure, the high-frequency structure include helix 1,
Supporting rod 2 and shell 3；The shell 3 is the shell of metal material.
It is provided with by exposure photo-etching and metallizes on the madial wall of the supporting rod 2 corresponding with the helix 1
First metallization coating 21, specifically, the madial wall exposure photo-etching of supporting rod 2, obtains pad patterns；Supporting rod after graphical
Madial wall metallizes to obtain the first metallization coating 21, and the method for metallising of the first metallization coating 21 uses magnetron sputtering or electricity
The methods of beamlet evaporates, the coating material of the first metallization coating 21 is gold or copper etc., and its thickness is 0.5-10 μm；
On the lateral wall of the helix 1 corresponding with the supporting rod 2 be provided with the 3rd metallization coating 11, the 3rd
The methods of method for metallising of metallization coating 11 is using magnetron sputtering or plating, the coating material of the 3rd metallization coating 11
For gold or copper etc., its thickness is 1-10 μm；The 3rd metallization coating 11 and the supporting rod on the lateral wall of the helix 1
The first metallization coating 21 on 2 madial wall is welded by pressure diffusion to be connected；The lateral wall of the supporting rod 2 and the shell
3 madial wall is connected.
A kind of preparation method for being used for above-mentioned helix TWT integral high frequency structure in the present embodiment, this method bag
Include following steps：
S1, the supporting rod 2 madial wall exposure photo-etching corresponding with the helix 1, and obtain pad patterns；
S2, it is graphical after the metallization of the madial wall of supporting rod 2, obtain the first metallization coating 21；
S3, the madial wall of supporting rod 2 remove remaining photoresist；
S4, helix 1 lateral wall corresponding with the supporting rod 2 metallization, obtain the 3rd metallization coating 11.
S5, using jig helix 1, supporting rod 2 and shell 3 are assembled and positioned；
S6, using extrusion helix 1 and supporting rod 2 are assembled in shell 3；And connection is welded by pressure diffusion and obtained
The high-frequency structure of integration；On the madial wall of the 3rd metallization coating 11 and the supporting rod 2 i.e. on the lateral wall of helix 1
First metallization coating 21 pass through pressure diffusion weldering connection；The madial wall of the lateral wall of supporting rod 2 and shell 3 is expanded by pressure
Scattered weldering is connected.Wherein pressure diffusion weldering technological parameter be：650 DEG C -1000 DEG C, weld interval 1-60min of welding temperature,
Vacuum 1 × 10 during welding-3-1×10-5Pa。
Further, the concrete technology of pressure diffusion weldering is to load the high-frequency structure assembled in diffusion welding mould,
With 750 DEG C of welding temperature in hydrogen furnace, 30min is welded, vacuum is 1 × 10 in stove during welding-4Pa。
What the word " on ", " under " in description orientation, "left", "right" etc. were for explanation used by herein facilitates base
For orientation in accompanying drawing shown in drawing, in actual device these orientation may due to device disposing way and
It is different.
In summary, embodiment of the present invention only provides a kind of optimal embodiment, in technology of the invention
Hold and technical characterstic has revealed that as above, but one skilled in the art scholar is still potentially based on disclosed content and made
Various replacements and modification without departing substantially from creation spirit of the present invention；Therefore, protection scope of the present invention is not limited to disclosed in embodiment
Technology contents, therefore equivalence changes that all shape under this invention, construction and principle are done, be encompassed by the protection model of the present invention
In enclosing.
Claims (9)
1. a kind of helix TWT preparation method of integral high frequency structure, it is characterised in that the high-frequency structure includes
Helix, supporting rod and shell；
First by exposure photo-etching and metallization is provided with the madial wall of the supporting rod corresponding with the helix
Metallized coating, and the lateral wall of the helix is expanded with the first metallization coating on the madial wall of the supporting rod by pressure
Dissipate weldering connection；The madial wall of the lateral wall of the supporting rod and the shell is connected；
The preparation method comprises the following steps：
S1, the supporting rod madial wall exposure photo-etching corresponding with the helix, and obtain pad patterns；
S2, it is graphical after the metallization of supporting rod madial wall, obtain the first metallization coating；
S3, supporting rod madial wall remove remaining photoresist；
S6, using jig helix, supporting rod and shell are assembled and positioned；
S7, using extrusion helix and supporting rod are assembled in shell；And connection is welded by pressure diffusion and obtains integration
High-frequency structure.
2. a kind of preparation method of helix TWT integral high frequency structure according to claim 1, its feature exist
The second metallization coating is provided with the lateral wall of, the supporting rod, the second metallization plating on the lateral wall of the supporting rod
The madial wall of layer and the shell is welded by pressure diffusion to be connected.
3. a kind of preparation method of helix TWT integral high frequency structure according to claim 2, its feature exist
In provided with the 3rd metallization coating on the lateral wall of the helix corresponding with the supporting rod；3rd metallization
Coating is welded by pressure diffusion with the first metallization coating on the madial wall of the supporting rod and connected.
4. a kind of preparation method of helix TWT integral high frequency structure according to claim 3, its feature exist
In the thickness of the first metallization coating is 0.5-10 μm；The thickness of the second metallization coating is 0.5-10 μm；It is described
The thickness of 3rd metallization coating is 1-10 μm.
5. a kind of preparation method of helix TWT integral high frequency structure according to claim 1, its feature exist
In the shell is the shell of metal material.
6. preparation method according to claim 1, it is characterised in that this method further comprises the following steps：
S4, supporting rod lateral wall metallization, obtain the second metallization coating.
7. preparation method according to claim 1, it is characterised in that this method further comprises the following steps：
S5, the helix lateral wall corresponding with supporting rod metallization, obtain the 3rd metallization coating.
8. preparation method according to claim 6, it is characterised in that the second metallization on the lateral wall of the supporting rod
The madial wall of coating and the shell is welded by pressure diffusion to be connected.
9. preparation method according to claim 7, it is characterised in that the 3rd metallization coating and the supporting rod
The first metallization coating on madial wall is welded by pressure diffusion to be connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610554731.XA CN106128915B (en) | 2016-07-14 | 2016-07-14 | A kind of helix TWT integral high frequency structure and the preparation method of the high-frequency structure |
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| CN201610554731.XA CN106128915B (en) | 2016-07-14 | 2016-07-14 | A kind of helix TWT integral high frequency structure and the preparation method of the high-frequency structure |
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| CN110690088B (en) * | 2019-10-16 | 2022-03-25 | 南京三乐集团有限公司 | Assembly method of helix traveling wave tube high-frequency circuit |
| CN112318220A (en) * | 2020-09-04 | 2021-02-05 | 山东国晶新材料有限公司 | Clamping rod surface cleaning method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5798958A (en) * | 1980-12-10 | 1982-06-19 | Nec Corp | Helix type delay wave circuit |
| JPS5887734A (en) * | 1981-11-18 | 1983-05-25 | Toshiba Corp | Manufacture of slow-wave circuit structure for traveling-wave tube |
| GB2141370B (en) * | 1983-06-17 | 1987-02-04 | Standard Telephones Cables Ltd | Bonding metal to ceramic |
| JPS63126141A (en) * | 1986-11-14 | 1988-05-30 | Toshiba Corp | Traveling-wave tube and its manufacture |
| JPH01286232A (en) * | 1988-05-12 | 1989-11-17 | Toshiba Corp | Traveling-wave tube |
| JPH03261042A (en) * | 1990-03-09 | 1991-11-20 | Toshiba Corp | Slow-wave circuit for travelling-wave tube |
| JPH04368751A (en) * | 1991-06-17 | 1992-12-21 | Toshiba Corp | Helix type traveling wave tube |
| JPH0547308A (en) * | 1991-08-20 | 1993-02-26 | Toshiba Corp | Traveling-wave tube assembly structure |
| JP2000215819A (en) * | 1999-01-22 | 2000-08-04 | Nec Corp | Traveling wave tube |
| JP2006210261A (en) * | 2005-01-31 | 2006-08-10 | Mitsubishi Electric Corp | Slow-wave circuit |
| CN202695372U (en) * | 2012-07-23 | 2013-01-23 | 中国电子科技集团公司第十二研究所 | Composite conduction structure of high thermal conduction material |
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