CN202695372U - Composite conduction structure of high thermal conduction material - Google Patents
Composite conduction structure of high thermal conduction material Download PDFInfo
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- CN202695372U CN202695372U CN 201220358765 CN201220358765U CN202695372U CN 202695372 U CN202695372 U CN 202695372U CN 201220358765 CN201220358765 CN 201220358765 CN 201220358765 U CN201220358765 U CN 201220358765U CN 202695372 U CN202695372 U CN 202695372U
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- diamond
- thermal conduction
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Abstract
The utility model provides a composite conduction structure of a high thermal conduction material and belongs to the field of electronic elements. The composite conduction structure of the high thermal conduction material comprises at least three clamping rods which are used in a slow wave system of a microwave vacuum electron device and a high thermal conduction insulation substrate which is used in a microwave solid device; the clamping rods and the high thermal conduction insulation substrate are of a composite structure; and in the structure, diamond insulation materials arranged on an upper layer and diamond copper used as a high thermal conduction composite metal and arranged on a lower layer are connected and fixed to form a composite through brazing. The temperature thermal conductivity of the composite conduction structure is equal to or higher than 500W/m.K; and the composite conduction structure is low in dielectric constant and medium loss, reliable in insulation property, free of toxicity, resistant to high temperature resistance and capable of meeting the using demands of the clamping rods of the slow wave system or the substrate of the solid device.
Description
Technical field
The utility model belongs to the electronic devices and components field, is specifically related to be applicable to the compound conducting structure of a kind of highly heat-conductive material in the microwave vacuum electronic device.
Background technology
In the high-tech sector of various HIGH-POWERED MICROWAVES devices, overheated in order to prevent device, a large amount of heat energy that produce in the time of need to making device inside work are transmitted to device outside (cold junction) immediately, and the various approach by the outside dispel the heat again.In many cases, because the restriction of various requirement on electric performance, the inner heat source can not directly be electrically connected with external cooling position (being generally metal), therefore between inner heat source and external cooling position, must increase one or more layers insulating barrier, these aspects can produce damping to the conduction of heat energy, thereby require insulating layer material not only to satisfy the requirement of required dielectric strength, to have simultaneously the characteristic of high thermal conductivity.
Usually use various highly heat-conductive carbon/ceramic porcelain pieces as insulation, the heat-conducting medium of thermal source and cold junction.The insulating radiation material that present domestic device uses mainly is with ceramic main, such as aluminium oxide, beryllium oxide, aluminium nitride, boron nitride etc.The aluminium oxide ceramics technical maturity be present most widely used ceramic insulating material, but its thermal conductivity is relatively low, can not satisfy the heat radiation requirement of high power device.The beryllium oxide ceramics heat conductivility is best, use in a large number in electron tube, but its thermal conductivity raises with temperature and sharply descend, and thermal conductivity is reduced to 60W/mK under the 120W/mK under 250 ° of C temperature of high temperature and 400 ° of C of higher temperature by the 250W/mK under the room temperature.And because beryllium oxide is poisonous, substantially be not used at civil areas such as large scale integrated circuits.Aluminium nitride ceramics has preferably heat conductivility, also have simultaneously good mechanical strength, but its dielectric loss is higher, is not also favored by the user.
The best dielectric material of thermal conductivity is diamond, and its thermal conductivity can reach 1500W/mK, but involves great expense at high-quality, the large dimond of vacuum electron device field requirement, is difficult to popularize and uses.Simultaneously because high heat conduction cold side metal, the common metal copper that for example thermal conductivity is the highest (its thermal conductivity 370W/mK), thermal conductivity are far below diamond, but its coefficient of expansion is adamantine 4 times, so large difference is difficult to the two direct combination, to obtain the performance of high heat conduction.So search out a kind of composite material of diamond copper of middle transition, can be combined with diamond and form the good compound conducting structure of heat conductivility.Diamond copper is that diamond copper particle is dispersed in the composite material in the metallic copper, is characterized in high thermal conductivity, and greater than 650W/mK, low-expansion coefficient can mate with diamond under the room temperature.
Summary of the invention
The utility model technical issues that need to address are, problem for existing ceramic material existence, be that heat conductivility and temperature stability are relatively poor, in the HIGH-POWERED MICROWAVES device uses, occur now and then and burn and the mis-behave phenomenon, in order to overcome this defective, just need to develop a kind of new conducting structure, both made that its insulation property are good, dielectric loss is low, the compound conducting structure that has again high heat conductance simultaneously.
The utility model intend to adopt diamond as heat conduction, dielectric, again with high heat conduction and the compound conducting structure of high heat conduction that composite material-diamond copper combines with metallic character.
The purpose of this utility model is to provide a kind of highly heat-conductive material compound conducting structure.
The utility model relies on following technical scheme to realize, the compound conducting structure of a kind of highly heat-conductive material, comprise for three of microwave vacuum electronic device slow wave systems or many supporting rods and solid state device substrate, it is characterized in that, described supporting rod and substrate, its structure is to be positioned at the diamond insulating material on upper strata and to be positioned at the high heat conduction composition metal of lower floor-diamond copper through the soldering combination, to be fixed as a complex structure.This complex is again through being laser-cut into required overall dimension.
This structure has the following advantages:
1) with diamond and this composite material of diamond copper respectively as the complex structure of dielectric and heat-conducting metal, can obtain high thermal conductivity.
2) the bi-material coefficient of expansion approaches, and can use under hot environment relievedly
3) used thickness of diamond can decrease, is beneficial to the reduction manufacturing cost.
Diamond part dielectric constant and dielectric loss are low, insulation property are reliable, and be nontoxic, high temperature resistant, can satisfy the instructions for use of slow wave system supporting rod or solid state device substrate.Simultaneously good, the resistance to chemical attack of its metal Some Mechanical Properties, thermal conductivity is high, and the heat of ceramic segment can be derived fast by metal, is desirable insulating radiation substrate and medium supporting rod radiator structure.
Description of drawings
Fig. 1 is microwave device heat conduction schematic diagram
Fig. 2 is the ceramic heat emission material schematic diagram that tradition is used
Fig. 3 is highly heat-conductive material composite construction schematic diagram
Several Heat Conduction Material performance comparison of Fig. 4 schematic diagram
Embodiment
With reference to Fig. 1, under the expression conventional situation, the universal law schematic diagram of thermal energy conduction in the microwave vacuum electronic device.Thermal source refers to be positioned at the electron beam at device center among the figure, and heat energy passes slow wave structure ceramic dielectric assembly to the periphery, and the shell of corresponding device outside, magnet steel.With reference to Fig. 2, dielectric supporting rod and slow wave system schematic diagram that the expression tradition is used, this structure exists the defective of some functions, but is still using widely at present.With reference to Fig. 3, represent highly heat-conductive material composite construction schematic diagram described in the utility model.Room temperature thermal conductivity 〉=the 500W/mK of this composite construction, 250 ℃ of thermal conductivity 〉=350W/mK, 400C thermal conductivity 〉=300W/mK, the thickness of dielectric layers scope is 0.1mm～0.3mm; The size range of composite construction is that 0.3mm(is wide) * 0.7mm(is thick) * 50mm(is long);
Technique for this composite construction realizes, adopt the soldering connected mode that bi-material is combined as a whole, adopt existing ripe soldering processes mode to weld, technical process is relatively simple, but the interface resistance of composite bed can affect the thermal conductivity of composite construction integral body.Integral material after compound can become required form by laser processing.1 is high-thermal conductive metal diamond copper among the figure, and the mode by soldering is connecting diamond medium 4, and the combination interface of the two is 5, and the supporting rod of this composite construction clips slow wave helix 2, and the slow wave line integral installation is fitted in the shell 3.With reference to figure 4, represent several Heat Conduction Material performance comparison schematic diagrames, A represents the supporting rod of the described Heat Conduction Material composite construction of this patent, and B is the beryllia ceramic bar, and C and D represent respectively aluminium nitride and boron nitride porcelain bar, can find out that the thermal conductivity of this composite material is very high.
Claims (1)
1. compound conducting structure of highly heat-conductive material, comprise for three of microwave vacuum electronic device slow wave systems or many supporting rods, also comprise for solid state microwave device high heat conductive insulating substrate, it is characterized in that, in the described slow wave system in supporting rod and the solid state device high heat conductive insulating substrate be composite construction, this structure is that the diamond insulating material that will be positioned at the upper strata links with soldering with the high heat conduction composition metal that is positioned at lower floor-diamond copper, is fixed as a complex.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220358765 CN202695372U (en) | 2012-07-23 | 2012-07-23 | Composite conduction structure of high thermal conduction material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220358765 CN202695372U (en) | 2012-07-23 | 2012-07-23 | Composite conduction structure of high thermal conduction material |
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| CN202695372U true CN202695372U (en) | 2013-01-23 |
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| CN 201220358765 Expired - Fee Related CN202695372U (en) | 2012-07-23 | 2012-07-23 | Composite conduction structure of high thermal conduction material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594306A (en) * | 2013-11-13 | 2014-02-19 | 太原理工大学 | Diamond / metal composite material clamping rod and manufacturing method thereof |
| CN106128915A (en) * | 2016-07-14 | 2016-11-16 | 中国电子科技集团公司第十二研究所 | A kind of helix TWT integral high frequency structure and the preparation method of this high-frequency structure |
| CN106707725A (en) * | 2017-01-20 | 2017-05-24 | 中国电子科技集团公司第十二研究所 | Optical transmission window for atomic clock |
-
2012
- 2012-07-23 CN CN 201220358765 patent/CN202695372U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594306A (en) * | 2013-11-13 | 2014-02-19 | 太原理工大学 | Diamond / metal composite material clamping rod and manufacturing method thereof |
| CN106128915A (en) * | 2016-07-14 | 2016-11-16 | 中国电子科技集团公司第十二研究所 | A kind of helix TWT integral high frequency structure and the preparation method of this high-frequency structure |
| CN106707725A (en) * | 2017-01-20 | 2017-05-24 | 中国电子科技集团公司第十二研究所 | Optical transmission window for atomic clock |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: BEIJING JINGSENYUAN ELECTRICAL APPARATUS COMPANY LTD. Assignor: No.12 Inst., China Electronic Sci-Tech Group Corp. Contract record no.: 2014990000543 Denomination of utility model: Composite conduction structure of high thermal conduction material Granted publication date: 20130123 License type: Exclusive License Record date: 20140715 |
|
| LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20190723 |