CN106119774A - 一种铝芯导线表面镀硅工艺 - Google Patents

一种铝芯导线表面镀硅工艺 Download PDF

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CN106119774A
CN106119774A CN201610555578.2A CN201610555578A CN106119774A CN 106119774 A CN106119774 A CN 106119774A CN 201610555578 A CN201610555578 A CN 201610555578A CN 106119774 A CN106119774 A CN 106119774A
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aluminum core
conductive line
line surfaces
core conductive
silicon
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王波
王运安
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Anhui Qiao Sen Electrical Polytron Technologies Inc
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Abstract

一种铝芯导线表面镀硅工艺，包括表面预处理，清洗、烘干，溅射氮化铝层缓冲层，在缓冲层上蒸镀硅薄层，在纯氮气氛的退火炉中进行退火步骤。通过在铝芯导线表面先溅射一层缓冲层再蒸镀一层硅薄层，使得铝芯导线与硅薄层具有很好的兼容性，克服了金属铝与硅的晶格失配等缺陷，硅薄层使得铝芯导线外表面不易氧化，在与铜线导线连接时不会产生电化腐蚀、发热量小，同时突破了传统输电导线的结构设计，在铝芯导线外表面覆盖一层半导体层再用绝缘层包裹，输电时产生的电能损失更少，即使绝缘外层有破损也不会发生漏电或者引发触电事故，本发明的工艺方法具有工艺路线简单，成本低廉，适宜于大批量生产等优点。

Description

一种铝芯导线表面镀硅工艺
技术领域
本发明涉及铝芯导线制备技术领域，具体涉及一种铝芯导线表面镀硅工艺。
背景技术
铝芯导线与铜芯导线相比具有以下优点：
(1)铝芯导线价格便宜：铜杆是铝杆价格的3.5倍、铜的比重又是铝的3.3倍，所以铝芯导线比铜芯导线便宜很多，适合于低资工程或临时用电。
(2)铝芯导线质轻：铝芯导线的重量是铜芯线的40％，施工运输成本低。
尽管铝导芯线价格便宜，但是铝芯导线易氧化，在空气中与氧反应很快生成一种氧化膜，铜铝连接时会产生电化腐蚀，接头易发热，这限制了铝芯导线的应用。同时铝芯导线与绝缘外套直接接触这种传统结构设计，使得输送电能时在接触截面上产生较大的电损，如果绝缘外套破损，容易发生漏电事故。
发明内容
本发明为解决上述问题，提供一种在铝芯导线表面镀硅工艺，使得铝芯导线抗氧化，在与铜线连接时不产生电化腐蚀，具有很好的稳定性。
本发明所要解决的技术问题采用以下的技术方案来实现：
一种铝芯导线表面镀硅工艺，包括以下步骤：
1)、表面预处理：将铝芯导线置于浸泡液中浸泡10-15min。
2)、清洗、烘干：对铝芯导线表面进行清洗并作烘干处理，烘干温度100-150℃，烘干时间20-30min；
3)、溅射：使用铝源与氮源通过真空溅射方法向铝芯导线表面溅射一层厚度在5-8um的氮化铝层作为缓冲层；
4)、蒸镀：将铝芯导线匀速穿过真空镀膜管，设定蒸镀温度为420-450℃，压力250-300Torr，同时向真空镀膜管内通入硅源和氢气，氢气将硅从硅源中还原为单晶硅并蒸镀在铝芯导线表面，通过控制蒸镀时间使得镀层厚度在10-15um；
5)、退火：在纯氮气氛的石英管式退火炉中进行退火处理，控制氮气流量在30-50L/min，所用氮气纯度在99.99％以上，退火时间25-30min，直至铝芯导线出炉温度在30-40℃范围内。
所述步骤1)中的浸泡液由以下重量份的原料组成：
水100-120份，氯化钠10-15份，氯化钾8-12份，草酸3-5份，苹果汁2-4份，柠檬酸3-6份，高锰酸钾0.5-1.2份，甲酸0.8-2.0份，花生酸0.5-0.7份，蜂花粉0.1-0.4份，月桂酸0.3-0.5份，孢子粉0.2-0.4份，三七粉0.1-0.3份，麻黄碱0.3-0.4份，绿原酸0.1-0.2份，咖啡酸0.3-0.6份。
通过将铝芯导线在浸泡液中浸泡，清除铝芯导线表面的锈渍和各种污秽，同时在表面形成一极细空隙，使得后续溅射在铝芯导线表面的氮化铝层更加稳定致密。
所述步骤2)中清洗用水为反渗透水，使用反射透水能够去除铝芯导线表面氧化层和附着的各种金属离子、杂质。
所述步骤3)中铝源与氮源分别为三甲基铝和氨气。
所述步骤4)中铝芯导线在匀速穿过真空镀膜管时，同时以20-30RPM绕中心轴线旋转，使得表面镀层更加均匀。
所述步骤4)中使用的硅源为硅烷或二氯二氢硅。
本发明的有益效果为：通过在铝芯导线表面先溅射一层缓冲层再蒸镀一层硅薄层，使得铝芯导线与硅薄层具有很好的兼容性，克服了金属铝与硅的晶格失配等缺陷，硅薄层使得铝芯导线外表面不易氧化，在与铜线导线连接时不会产生电化腐蚀、发热量小，同时突破了传统输电导线的结构设计，在铝芯导线外表面覆盖一层半导体层再用绝缘层包裹，输电时产生的电能损失更少，即使绝缘外层有破损也不会发生漏电或者引发触电事故，本发明的工艺方法具有工艺路线简单，成本低廉，适宜于大批量生产等优点。
具体实施方式：
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合实施例，进一步阐述本发明。
实施例1
1)、表面预处理：将铝芯导线置于浸泡液中浸泡10min。
2)、清洗、烘干：对铝芯导线表面进行清洗并作烘干处理，烘干温度100℃，烘干时间20min；
3)、溅射：使用铝源与氮源通过真空溅射方法向铝芯导线表面溅射一层厚度在5um的氮化铝层作为缓冲层；
4)、蒸镀：将铝芯导线匀速穿过真空镀膜管，设定蒸镀温度为420℃，压力250Torr，同时向真空镀膜管内通入硅源和氢气，氢气将硅从硅源中还原为单晶硅并蒸镀在铝芯导线表面，通过控制蒸镀时间使得镀层厚度在10um；
5)、退火：在纯氮气氛的石英管式退火炉中进行退火处理，控制氮气流量在30-50L/min，所用氮气纯度在99.99％以上，退火时间25-30min，直至铝芯导线出炉温度在30-40℃范围内。
实施例2
1)、表面预处理：将铝芯导线置于浸泡液中浸泡13min。
2)、清洗、烘干：对铝芯导线表面进行清洗并作烘干处理，烘干温度130℃，烘干时间25min；
3)、溅射：使用铝源与氮源通过真空溅射方法向铝芯导线表面溅射一层厚度在7um的氮化铝层作为缓冲层；
4)、蒸镀：将铝芯导线匀速穿过真空镀膜管，设定蒸镀温度为430℃，压力275Torr，同时向真空镀膜管内通入硅源和氢气，氢气将硅从硅源中还原为单晶硅并蒸镀在铝芯导线表面，通过控制蒸镀时间使得镀层厚度在13um；
5)、退火：在纯氮气氛的石英管式退火炉中进行退火处理，控制氮气流量在30-50L/min，所用氮气纯度在99.99％以上，退火时间25-30min，直至铝芯导线出炉温度在30-40℃范围内。
实施例3
1)、表面预处理：将铝芯导线置于浸泡液中浸泡15min。
2)、清洗、烘干：对铝芯导线表面进行清洗并作烘干处理，烘干温度150℃，烘干时间30min；
3)、溅射：使用铝源与氮源通过真空溅射方法向铝芯导线表面溅射一层厚度在8um的氮化铝层作为缓冲层；
4)、蒸镀：将铝芯导线匀速穿过真空镀膜管，设定蒸镀温度为450℃，压力300Torr，同时向真空镀膜管内通入硅源和氢气，氢气将硅从硅源中还原为单晶硅并蒸镀在铝芯导线表面，通过控制蒸镀时间使得镀层厚度在15um；
5)、退火：在纯氮气氛的石英管式退火炉中进行退火处理，控制氮气流量在30-50L/min，所用氮气纯度在99.99％以上，退火时间25-30min，直至铝芯导线出炉温度在30-40℃范围内。
所述步骤1)中的浸泡液由以下重量份的原料组成：
水100-120份，氯化钠10-15份，氯化钾8-12份，草酸3-5份，苹果汁2-4份，柠檬酸3-6份，高锰酸钾0.5-1.2份，甲酸0.8-2.0份，花生酸0.5-0.7份，蜂花粉0.1-0.4份，月桂酸0.3-0.5份，孢子粉0.2-0.4份，三七粉0.1-0.3份，麻黄碱0.3-0.4份，绿原酸0.1-0.2份，咖啡酸0.3-0.6份。
通过将铝芯导线在浸泡液中浸泡，清除铝芯导线表面的锈渍和各种污秽，同时在表面形成一极细空隙，使得后续溅射在铝芯导线表面的氮化铝层更加稳定致密。
所述步骤2)中清洗用水为反渗透水，使用反射透水能够去除铝芯导线表面氧化层和附着的各种金属离子、杂质。
所述步骤3)中铝源与氮源分别为三甲基铝和氨气。
所述步骤4)中铝芯导线在匀速穿过真空镀膜管时，同时以20-30RPM绕中心轴线旋转，使得表面镀层更加均匀。
所述步骤4)中使用的硅源为硅烷或二氯二氢硅。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的仅为本发明的优选例，并不用来限制本发明，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (8)

1.一种铝芯导线表面镀硅工艺，其特征在于，包括以下步骤：
1)、表面预处理：将铝芯导线置于浸泡液中浸泡10-15min。
2)、清洗、烘干：对铝芯导线表面进行清洗并作烘干处理，烘干温度100-150℃，烘干时间20-30min；
3)、溅射：使用铝源与氮源通过真空溅射方法向铝芯导线表面溅射一层厚度在5-8um的氮化铝层作为缓冲层；
4)、蒸镀：将铝芯导线匀速穿过真空镀膜管，设定蒸镀温度为420-450℃，压力250-300Torr，同时向真空镀膜管内通入硅源和氢气，氢气将硅从硅源中还原为单晶硅并蒸镀在铝芯导线表面，通过控制蒸镀时间使得镀层厚度在10-15um；
5)、退火：在纯氮气氛的石英管式退火炉中进行退火处理，控制氮气流量在30-50L/min，所用氮气纯度在99.99％以上，退火时间25-30min，直至铝芯导线出炉温度在30-40℃范围内。
2.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于，所述步骤1)中的浸泡液由以下重量份的原料组成：
水100-120份，氯化钠10-15份，氯化钾8-12份，草酸3-5份，苹果汁2-4份，柠檬酸3-6份，高锰酸钾0.5-1.2份，甲酸0.8-2.0份，花生酸0.5-0.7份，蜂花粉0.1-0.4份，月桂酸0.3-0.5份，孢子粉0.2-0.4份，三七粉0.1-0.3份，麻黄碱0.3-0.4份，绿原酸0.1-0.2份，咖啡酸0.3-0.6份。
3.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于：所述步骤2)中清洗用水为反渗透水。
4.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于：所述步骤3)中氮化铝层厚度为5-8um。
5.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于：所述步骤3)中铝源与氮源分别为三甲基铝和氨气。
6.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于：所述硅薄层厚度为10-15um。
7.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于：所述步骤4)中铝芯导线在匀速穿过真空镀膜管时，同时以20-30RPM绕中心轴线旋转。
8.如权利要求1所述的一种铝芯导线表面镀硅工艺，其特征在于：所述步骤4)中使用的硅源为硅烷或二氯二氢硅。
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