CN106104383B - 利用rf等离子场对euv光学器件的主动净化的装置和方法 - Google Patents

利用rf等离子场对euv光学器件的主动净化的装置和方法 Download PDF

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Publication number
CN106104383B
CN106104383B CN201580013909.3A CN201580013909A CN106104383B CN 106104383 B CN106104383 B CN 106104383B CN 201580013909 A CN201580013909 A CN 201580013909A CN 106104383 B CN106104383 B CN 106104383B
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CN
China
Prior art keywords
conductive
conductive member
conductive surface
plasma
extreme ultraviolet
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CN201580013909.3A
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English (en)
Chinese (zh)
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CN106104383A (zh
Inventor
A·I·厄肖夫
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ASML Holding NV
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ASML Holding NV
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/18—Coatings for keeping optical surfaces clean, e.g. hydrophobic or photo-catalytic films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/007—Production of X-ray radiation generated from plasma involving electric or magnetic fields in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Plasma Technology (AREA)
  • Cleaning In General (AREA)
  • Lenses (AREA)
CN201580013909.3A 2014-03-18 2015-03-05 利用rf等离子场对euv光学器件的主动净化的装置和方法 Active CN106104383B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910125932.1A CN110058494B (zh) 2014-03-18 2015-03-05 利用rf等离子场对euv光学器件的主动净化的装置和方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/218,707 US9539622B2 (en) 2014-03-18 2014-03-18 Apparatus for and method of active cleaning of EUV optic with RF plasma field
US14/218,707 2014-03-18
PCT/EP2015/054588 WO2015139964A1 (en) 2014-03-18 2015-03-05 Apparatus for and method of active cleaning of euv optic with rf plasma field

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201910125932.1A Division CN110058494B (zh) 2014-03-18 2015-03-05 利用rf等离子场对euv光学器件的主动净化的装置和方法

Publications (2)

Publication Number Publication Date
CN106104383A CN106104383A (zh) 2016-11-09
CN106104383B true CN106104383B (zh) 2019-03-19

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CN201910125932.1A Active CN110058494B (zh) 2014-03-18 2015-03-05 利用rf等离子场对euv光学器件的主动净化的装置和方法

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Country Status (5)

Country Link
US (2) US9539622B2 (enExample)
JP (2) JP6685914B2 (enExample)
KR (1) KR102397027B1 (enExample)
CN (2) CN106104383B (enExample)
WO (1) WO2015139964A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111266368B (zh) * 2020-01-20 2020-09-22 哈尔滨工业大学 一种聚焦离子束清理透射电子显微镜光阑的方法
KR20220132302A (ko) 2021-03-23 2022-09-30 삼성전자주식회사 Euv 컬렉터 검사 장치 및 검사 방법
KR102867854B1 (ko) 2021-03-23 2025-10-02 삼성전자주식회사 극자외선 광원 시스템의 컬렉터 세정 방법
CN114200778A (zh) * 2021-06-25 2022-03-18 四川大学 一种极紫外光刻机lpp光源收集镜的等离子体原位清洗结构

Citations (5)

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CN1959541A (zh) * 2005-09-16 2007-05-09 Asml荷兰有限公司 包括放电发生器的光刻装置和用于清洁光刻装置的元件的方法
WO2008048415A2 (en) * 2006-10-13 2008-04-24 Cymer, Inc.(A Nevada Corporation) Drive laser delivery systems for euv light source
US20100034349A1 (en) * 2007-03-07 2010-02-11 Carl Zeiss Smt Ag Method for cleaning an euv lithography device, method for measuring the residual gas atmosphere and the contamination and euv lithography device
WO2013007407A1 (en) * 2011-07-13 2013-01-17 Asml Netherlands B.V. Power supply for a discharge produced plasma euv source
WO2013072154A1 (en) * 2011-11-15 2013-05-23 Asml Netherlands B.V. Radiation source and method for operating the same, lithographic apparatus comprising the radiation source, and device manufacturing method

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US7116394B2 (en) * 2002-12-20 2006-10-03 Asml Netherlands B.V. Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
US8075732B2 (en) * 2004-11-01 2011-12-13 Cymer, Inc. EUV collector debris management
TWI305296B (en) * 2004-07-27 2009-01-11 Cymer Inc Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source
US7989786B2 (en) * 2006-03-31 2011-08-02 Energetiq Technology, Inc. Laser-driven light source
CN101681114B (zh) * 2007-06-12 2013-05-08 皇家飞利浦电子股份有限公司 光学设备和原位处理euv光学部件以增强降低的反射率的方法
DE102007033701A1 (de) * 2007-07-14 2009-01-22 Xtreme Technologies Gmbh Verfahren und Anordnung zur Reinigung von optischen Oberflächen in plasmabasierten Strahlungsquellen
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Publication number Priority date Publication date Assignee Title
CN1959541A (zh) * 2005-09-16 2007-05-09 Asml荷兰有限公司 包括放电发生器的光刻装置和用于清洁光刻装置的元件的方法
WO2008048415A2 (en) * 2006-10-13 2008-04-24 Cymer, Inc.(A Nevada Corporation) Drive laser delivery systems for euv light source
US20100034349A1 (en) * 2007-03-07 2010-02-11 Carl Zeiss Smt Ag Method for cleaning an euv lithography device, method for measuring the residual gas atmosphere and the contamination and euv lithography device
WO2013007407A1 (en) * 2011-07-13 2013-01-17 Asml Netherlands B.V. Power supply for a discharge produced plasma euv source
WO2013072154A1 (en) * 2011-11-15 2013-05-23 Asml Netherlands B.V. Radiation source and method for operating the same, lithographic apparatus comprising the radiation source, and device manufacturing method

Also Published As

Publication number Publication date
KR20160134648A (ko) 2016-11-23
JP6944565B2 (ja) 2021-10-06
US20170095843A1 (en) 2017-04-06
US10493504B2 (en) 2019-12-03
WO2015139964A1 (en) 2015-09-24
US20150266067A1 (en) 2015-09-24
JP2017515136A (ja) 2017-06-08
CN106104383A (zh) 2016-11-09
CN110058494B (zh) 2021-09-03
JP6685914B2 (ja) 2020-04-22
JP2020122973A (ja) 2020-08-13
US9539622B2 (en) 2017-01-10
CN110058494A (zh) 2019-07-26
KR102397027B1 (ko) 2022-05-11

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