CN106103633A - 喷墨用光及热固化性粘接剂、半导体装置的制造方法及电子部件 - Google Patents
喷墨用光及热固化性粘接剂、半导体装置的制造方法及电子部件 Download PDFInfo
- Publication number
- CN106103633A CN106103633A CN201580013146.2A CN201580013146A CN106103633A CN 106103633 A CN106103633 A CN 106103633A CN 201580013146 A CN201580013146 A CN 201580013146A CN 106103633 A CN106103633 A CN 106103633A
- Authority
- CN
- China
- Prior art keywords
- bonding agent
- thermocurable
- ink
- compound
- mentioned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007767 bonding agent Substances 0.000 title claims abstract description 203
- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000000034 method Methods 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 150000001875 compounds Chemical class 0.000 claims abstract description 202
- 238000007711 solidification Methods 0.000 claims abstract description 33
- 230000008023 solidification Effects 0.000 claims abstract description 33
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 27
- 238000005286 illumination Methods 0.000 claims abstract description 25
- 238000001029 thermal curing Methods 0.000 claims abstract description 12
- -1 (methyl) Acryloyl group Chemical group 0.000 claims description 93
- 239000004593 Epoxy Substances 0.000 claims description 46
- 230000004087 circulation Effects 0.000 claims description 39
- CERQOIWHTDAKMF-UHFFFAOYSA-N alpha-methacrylic acid Natural products CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 38
- 238000007664 blowing Methods 0.000 claims description 27
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 18
- 238000013007 heat curing Methods 0.000 claims description 18
- 239000005977 Ethylene Substances 0.000 claims description 17
- 238000003475 lamination Methods 0.000 claims description 17
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 17
- 239000000945 filler Substances 0.000 claims description 16
- 238000007591 painting process Methods 0.000 claims description 14
- 239000002904 solvent Substances 0.000 claims description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- CTKINSOISVBQLD-UHFFFAOYSA-N Glycidol Chemical compound OCC1CO1 CTKINSOISVBQLD-UHFFFAOYSA-N 0.000 claims description 10
- 239000007921 spray Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- 238000000016 photochemical curing Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000003860 storage Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 1
- 239000003999 initiator Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 171
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 49
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical class COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 45
- 150000002466 imines Chemical class 0.000 description 33
- 239000000758 substrate Substances 0.000 description 26
- 150000002924 oxiranes Chemical class 0.000 description 25
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 19
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 19
- 150000003254 radicals Chemical class 0.000 description 19
- YXFVVABEGXRONW-UHFFFAOYSA-N toluene Substances CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 19
- 230000008569 process Effects 0.000 description 18
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 17
- 229920000768 polyamine Polymers 0.000 description 17
- 239000000243 solution Substances 0.000 description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- 238000009826 distribution Methods 0.000 description 16
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- 150000002148 esters Chemical class 0.000 description 13
- 239000012948 isocyanate Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000007800 oxidant agent Substances 0.000 description 12
- 230000001590 oxidative effect Effects 0.000 description 12
- 238000003756 stirring Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 229920003986 novolac Polymers 0.000 description 11
- 239000002253 acid Substances 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 10
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 9
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 125000003367 polycyclic group Chemical group 0.000 description 9
- 150000008065 acid anhydrides Chemical class 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 150000002513 isocyanates Chemical class 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 229960003742 phenol Drugs 0.000 description 8
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 8
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 7
- 229940106691 bisphenol a Drugs 0.000 description 7
- 238000001723 curing Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000007870 radical polymerization initiator Substances 0.000 description 7
- 150000005846 sugar alcohols Polymers 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 5
- 229930185605 Bisphenol Natural products 0.000 description 5
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 238000012790 confirmation Methods 0.000 description 5
- 150000004294 cyclic thioethers Chemical class 0.000 description 5
- 230000001351 cycling effect Effects 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 150000001336 alkenes Chemical class 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 150000004292 cyclic ethers Chemical group 0.000 description 4
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 4
- 150000002576 ketones Chemical class 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 4
- 239000003505 polymerization initiator Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 229920003987 resole Polymers 0.000 description 4
- 235000002639 sodium chloride Nutrition 0.000 description 4
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N thiocyanic acid Chemical class SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- NDWUBGAGUCISDV-UHFFFAOYSA-N 4-hydroxybutyl prop-2-enoate Chemical compound OCCCCOC(=O)C=C NDWUBGAGUCISDV-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000005058 Isophorone diisocyanate Substances 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical group CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010538 cationic polymerization reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 150000002357 guanidines Chemical class 0.000 description 3
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 3
- 229940042795 hydrazides for tuberculosis treatment Drugs 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N o-dimethylbenzene Natural products CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- OTLDLKLSNZMTTA-UHFFFAOYSA-N octahydro-1h-4,7-methanoindene-1,5-diyldimethanol Chemical compound C1C2C3C(CO)CCC3C1C(CO)C2 OTLDLKLSNZMTTA-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 235000013824 polyphenols Nutrition 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000005987 sulfurization reaction Methods 0.000 description 3
- 239000006228 supernatant Substances 0.000 description 3
- 125000002769 thiazolinyl group Chemical group 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 2
- SBJCUZQNHOLYMD-UHFFFAOYSA-N 1,5-Naphthalene diisocyanate Chemical compound C1=CC=C2C(N=C=O)=CC=CC2=C1N=C=O SBJCUZQNHOLYMD-UHFFFAOYSA-N 0.000 description 2
- VZXPHDGHQXLXJC-UHFFFAOYSA-N 1,6-diisocyanato-5,6-dimethylheptane Chemical compound O=C=NC(C)(C)C(C)CCCCN=C=O VZXPHDGHQXLXJC-UHFFFAOYSA-N 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 2
- XFEJHTOVNZKSKW-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol;propanoic acid Chemical compound CCC(O)=O.OCC(CO)(CO)COCC(CO)(CO)CO XFEJHTOVNZKSKW-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical group C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- IIGAAOXXRKTFAM-UHFFFAOYSA-N N=C=O.N=C=O.CC1=C(C)C(C)=C(C)C(C)=C1C Chemical class N=C=O.N=C=O.CC1=C(C)C(C)=C(C)C(C)=C1C IIGAAOXXRKTFAM-UHFFFAOYSA-N 0.000 description 2
- QORUGOXNWQUALA-UHFFFAOYSA-N N=C=O.N=C=O.N=C=O.C1=CC=C(C(C2=CC=CC=C2)C2=CC=CC=C2)C=C1 Chemical compound N=C=O.N=C=O.N=C=O.C1=CC=C(C(C2=CC=CC=C2)C2=CC=CC=C2)C=C1 QORUGOXNWQUALA-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical group C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- GTTSNKDQDACYLV-UHFFFAOYSA-N Trihydroxybutane Chemical compound CCCC(O)(O)O GTTSNKDQDACYLV-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- MCJUWBUSIQXMPY-UHFFFAOYSA-N cyclopenta-1,3-diene titanium Chemical compound [Ti].C1C=CC=C1 MCJUWBUSIQXMPY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000005442 diisocyanate group Chemical group 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 235000019439 ethyl acetate Nutrition 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229940018564 m-phenylenediamine Drugs 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- SKECXRFZFFAANN-UHFFFAOYSA-N n,n-dimethylmethanethioamide Chemical compound CN(C)C=S SKECXRFZFFAANN-UHFFFAOYSA-N 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N o-Hydroxyethylbenzene Natural products CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- 150000002927 oxygen compounds Chemical class 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 235000011837 pasties Nutrition 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- OKQKDCXVLPGWPO-UHFFFAOYSA-N sulfanylidenephosphane Chemical compound S=P OKQKDCXVLPGWPO-UHFFFAOYSA-N 0.000 description 2
- 239000012974 tin catalyst Substances 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- DTGKSKDOIYIVQL-WEDXCCLWSA-N (+)-borneol Chemical group C1C[C@@]2(C)[C@@H](O)C[C@@H]1C2(C)C DTGKSKDOIYIVQL-WEDXCCLWSA-N 0.000 description 1
- NHOWDZOIZKMVAI-UHFFFAOYSA-N (2-chlorophenyl)(4-chlorophenyl)pyrimidin-5-ylmethanol Chemical compound C=1N=CN=CC=1C(C=1C(=CC=CC=1)Cl)(O)C1=CC=C(Cl)C=C1 NHOWDZOIZKMVAI-UHFFFAOYSA-N 0.000 description 1
- RGXUCUWVGKLACF-UHFFFAOYSA-N (3-methylphenyl)methanamine Chemical compound CC1=CC=CC(CN)=C1 RGXUCUWVGKLACF-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- JRQJLSWAMYZFGP-UHFFFAOYSA-N 1,1'-biphenyl;phenol Chemical compound OC1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 JRQJLSWAMYZFGP-UHFFFAOYSA-N 0.000 description 1
- XKSUVRWJZCEYQQ-UHFFFAOYSA-N 1,1-dimethoxyethylbenzene Chemical compound COC(C)(OC)C1=CC=CC=C1 XKSUVRWJZCEYQQ-UHFFFAOYSA-N 0.000 description 1
- DXBHBZVCASKNBY-UHFFFAOYSA-N 1,2-Benz(a)anthracene Chemical group C1=CC=C2C3=CC4=CC=CC=C4C=C3C=CC2=C1 DXBHBZVCASKNBY-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- IVSZLXZYQVIEFR-UHFFFAOYSA-N 1,3-Dimethylbenzene Natural products CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- ALVZNPYWJMLXKV-UHFFFAOYSA-N 1,9-Nonanediol Chemical compound OCCCCCCCCCO ALVZNPYWJMLXKV-UHFFFAOYSA-N 0.000 description 1
- SQZCAOHYQSOZCE-UHFFFAOYSA-N 1-(diaminomethylidene)-2-(2-methylphenyl)guanidine Chemical compound CC1=CC=CC=C1N=C(N)N=C(N)N SQZCAOHYQSOZCE-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- LMAUULKNZLEMGN-UHFFFAOYSA-N 1-ethyl-3,5-dimethylbenzene Chemical compound CCC1=CC(C)=CC(C)=C1 LMAUULKNZLEMGN-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- CERJZAHSUZVMCH-UHFFFAOYSA-N 2,2-dichloro-1-phenylethanone Chemical compound ClC(Cl)C(=O)C1=CC=CC=C1 CERJZAHSUZVMCH-UHFFFAOYSA-N 0.000 description 1
- GIMQKKFOOYOQGB-UHFFFAOYSA-N 2,2-diethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)(OCC)C(=O)C1=CC=CC=C1 GIMQKKFOOYOQGB-UHFFFAOYSA-N 0.000 description 1
- PTSBFVMVQZLXTA-UHFFFAOYSA-N 2,2-diethylhexane-1,1-diol Chemical compound CCCCC(CC)(CC)C(O)O PTSBFVMVQZLXTA-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- ZJWDJIVISLUQQZ-UHFFFAOYSA-N 2,4-dimethylpentane-1,5-diol Chemical compound OCC(C)CC(C)CO ZJWDJIVISLUQQZ-UHFFFAOYSA-N 0.000 description 1
- BXGYYDRIMBPOMN-UHFFFAOYSA-N 2-(hydroxymethoxy)ethoxymethanol Chemical compound OCOCCOCO BXGYYDRIMBPOMN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- HEQOJEGTZCTHCF-UHFFFAOYSA-N 2-amino-1-phenylethanone Chemical class NCC(=O)C1=CC=CC=C1 HEQOJEGTZCTHCF-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- JVBOHJILWXWANF-UHFFFAOYSA-N 2-cyano-N-(N,N-diethylcarbamimidoyl)acetamide Chemical compound C(C)N(C(NC(CC#N)=O)=N)CC JVBOHJILWXWANF-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- WVQHODUGKTXKQF-UHFFFAOYSA-N 2-ethyl-2-methylhexane-1,1-diol Chemical class CCCCC(C)(CC)C(O)O WVQHODUGKTXKQF-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- GILMNGUTRWPWSY-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CC(O)COC(=O)C=C GILMNGUTRWPWSY-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 description 1
- VEORPZCZECFIRK-UHFFFAOYSA-N 3,3',5,5'-tetrabromobisphenol A Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C)(C)C1=CC(Br)=C(O)C(Br)=C1 VEORPZCZECFIRK-UHFFFAOYSA-N 0.000 description 1
- GISWNRNUVGGVOS-UHFFFAOYSA-N 3,4-dihydroxybutan-2-yl prop-2-enoate Chemical compound OCC(O)C(C)OC(=O)C=C GISWNRNUVGGVOS-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- IWTYTFSSTWXZFU-UHFFFAOYSA-N 3-chloroprop-1-enylbenzene Chemical compound ClCC=CC1=CC=CC=C1 IWTYTFSSTWXZFU-UHFFFAOYSA-N 0.000 description 1
- VUZHZDBMVSHDRE-UHFFFAOYSA-N 3-hydroxypropyl prop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.OCCCOC(=O)C=C VUZHZDBMVSHDRE-UHFFFAOYSA-N 0.000 description 1
- ARXVXVOLXMVYIT-UHFFFAOYSA-N 3-methylbutyl 2-(dimethylamino)benzoate Chemical group CC(C)CCOC(=O)C1=CC=CC=C1N(C)C ARXVXVOLXMVYIT-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- USWANRSZMQLWTG-UHFFFAOYSA-N 4-(oxiran-2-ylmethoxy)butyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOCC1CO1 USWANRSZMQLWTG-UHFFFAOYSA-N 0.000 description 1
- KSMVBYPXNKCPAJ-UHFFFAOYSA-N 4-Methylcyclohexylamine Chemical compound CC1CCC(N)CC1 KSMVBYPXNKCPAJ-UHFFFAOYSA-N 0.000 description 1
- WDTRNCFZFQIWLM-UHFFFAOYSA-N 4-benzylaniline Chemical compound C1=CC(N)=CC=C1CC1=CC=CC=C1 WDTRNCFZFQIWLM-UHFFFAOYSA-N 0.000 description 1
- RMDKEBZUCHXUER-UHFFFAOYSA-N 4-methylbicyclo[2.2.1]hept-2-ene Chemical compound C1CC2C=CC1(C)C2 RMDKEBZUCHXUER-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N Benzoic acid Natural products OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- MPLPRHAEROXQEU-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCCCCCC(=O)O)(=O)O.[C] Chemical class C(CCCCCCCCCCCCCCCCCCCCC(=O)O)(=O)O.[C] MPLPRHAEROXQEU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical class NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- PHUPFVVBUXTQFA-UHFFFAOYSA-N NN=CN=N.NN=CN=N.N=C=O.N=C=O.C1=CC=CC=C1 Chemical compound NN=CN=N.NN=CN=N.N=C=O.N=C=O.C1=CC=CC=C1 PHUPFVVBUXTQFA-UHFFFAOYSA-N 0.000 description 1
- QSBINWBNXWAVAK-PSXMRANNSA-N PE-NMe(16:0/16:0) Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP(O)(=O)OCCNC)OC(=O)CCCCCCCCCCCCCCC QSBINWBNXWAVAK-PSXMRANNSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- YVNRUPSDZZZUQJ-UHFFFAOYSA-N [O].NC1=CC=CC=C1 Chemical compound [O].NC1=CC=CC=C1 YVNRUPSDZZZUQJ-UHFFFAOYSA-N 0.000 description 1
- VEBCLRKUSAGCDF-UHFFFAOYSA-N ac1mi23b Chemical compound C1C2C3C(COC(=O)C=C)CCC3C1C(COC(=O)C=C)C2 VEBCLRKUSAGCDF-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical compound NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000001118 alkylidene group Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229940064734 aminobenzoate Drugs 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- MWPLVEDNUUSJAV-LSMJWXKXSA-N anthracene Chemical group [13CH]1=[13CH][13CH]=[13CH][13C]2=CC3=CC=CC=C3C=[13C]21 MWPLVEDNUUSJAV-LSMJWXKXSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ZSTLPJLUQNQBDQ-UHFFFAOYSA-N azanylidyne(dihydroxy)-$l^{5}-phosphane Chemical compound OP(O)#N ZSTLPJLUQNQBDQ-UHFFFAOYSA-N 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- XEVRDFDBXJMZFG-UHFFFAOYSA-N carbonyl dihydrazine Chemical class NNC(=O)NN XEVRDFDBXJMZFG-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- XCJXQCUJXDUNDN-UHFFFAOYSA-N chlordene Chemical compound C12C=CCC2C2(Cl)C(Cl)=C(Cl)C1(Cl)C2(Cl)Cl XCJXQCUJXDUNDN-UHFFFAOYSA-N 0.000 description 1
- OOOYJJANGWVIRW-UHFFFAOYSA-N chlorobenzene;phenol Chemical compound OC1=CC=CC=C1.ClC1=CC=CC=C1 OOOYJJANGWVIRW-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 125000006841 cyclic skeleton Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical compound C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- VSSAZBXXNIABDN-UHFFFAOYSA-N cyclohexylmethanol Chemical compound OCC1CCCCC1 VSSAZBXXNIABDN-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- FOTKYAAJKYLFFN-UHFFFAOYSA-N decane-1,10-diol Chemical compound OCCCCCCCCCCO FOTKYAAJKYLFFN-UHFFFAOYSA-N 0.000 description 1
- ZWLIYXJBOIDXLL-UHFFFAOYSA-N decanedihydrazide Chemical compound NNC(=O)CCCCCCCCC(=O)NN ZWLIYXJBOIDXLL-UHFFFAOYSA-N 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical group CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 229940074654 diuril Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- SQNZJJAZBFDUTD-UHFFFAOYSA-N durene Chemical compound CC1=CC(C)=C(C)C=C1C SQNZJJAZBFDUTD-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007046 ethoxylation reaction Methods 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical class C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- PBOSTUDLECTMNL-UHFFFAOYSA-N lauryl acrylate Chemical compound CCCCCCCCCCCCOC(=O)C=C PBOSTUDLECTMNL-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 230000001394 metastastic effect Effects 0.000 description 1
- 206010061289 metastatic neoplasm Diseases 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- QOHMWDJIBGVPIF-UHFFFAOYSA-N n',n'-diethylpropane-1,3-diamine Chemical compound CCN(CC)CCCN QOHMWDJIBGVPIF-UHFFFAOYSA-N 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical compound C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- URLKBWYHVLBVBO-UHFFFAOYSA-N p-dimethylbenzene Natural products CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 125000005582 pentacene group Chemical group 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical group C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- GKKCIDNWFBPDBW-UHFFFAOYSA-M potassium cyanate Chemical compound [K]OC#N GKKCIDNWFBPDBW-UHFFFAOYSA-M 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- QTECDUFMBMSHKR-UHFFFAOYSA-N prop-2-enyl prop-2-enoate Chemical compound C=CCOC(=O)C=C QTECDUFMBMSHKR-UHFFFAOYSA-N 0.000 description 1
- MQVRLONNONYDJP-UHFFFAOYSA-N propane-1,1,2,3-tetrol Chemical compound OCC(O)C(O)O MQVRLONNONYDJP-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007616 round robin method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- SLGBZMMZGDRARJ-UHFFFAOYSA-N triphenylene Chemical group C1=CC=C2C3=CC=CC=C3C3=CC=CC=C3C2=C1 SLGBZMMZGDRARJ-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
- C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C09J201/06—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
- C09J201/08—Carboxyl groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/27312—Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/27318—Manufacturing methods by local deposition of the material of the layer connector in liquid form by dispensing droplets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/278—Post-treatment of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7515—Means for applying permanent coating, e.g. in-situ coating
- H01L2224/75151—Means for direct writing
- H01L2224/75155—Jetting means, e.g. ink jet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83874—Ultraviolet [UV] curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Polymerisation Methods In General (AREA)
- Graft Or Block Polymers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
本发明提供一种可以提高粘接剂固化的粘接剂层的厚度精度,并且可以不易在粘接剂层上产生空隙的喷墨用光及热固化性粘接剂。本发明的喷墨用光及热固化性粘接剂含有光固化性化合物、热固化性化合物、光聚合引发剂、和热固化剂,以365nm下的照度为100mW/cm2的方式对粘接剂照射累计光量1000mJ/cm2的光而得到B阶段化粘接剂时,所述B阶段化粘接剂在25℃下的弹性模量为5.0×102Pa以上且8.0×104Pa以下。
Description
技术领域
本发明涉及使用喷墨装置进行涂布所使用的喷墨用光及热固化性粘接剂。本发明还涉及使用上述粘接剂的半导体装置的制造方法以及使用了上述粘接剂的电子部件。
背景技术
半导体元件和基板等支承部件的接合主要使用作为半导体元件固定用粘接剂的糊状粘接剂。近年来,随着半导体元件的小型化、半导体封装的小型化、高性能化,对使用的支承部件也要求小型化。对于这样的要求,就膏状粘接剂而言,产生湿润扩散而溢出等问题。另外,就糊状粘接剂而言,不易控制厚度,其结果,产生半导体元件倾斜、引线接合不良等问题。因此,就近年来的半导体封装中使用现有的膏状粘接剂进行的接合而言,不能充分处理。
另外,近年来,如下述专利文献1所记载那样,开始使用具有膜状粘接剂层的粘接片材。
使用了该粘接片材的接合方法中,首先,将粘接片材(粘接剂层)贴附在半导体晶片的背面,进一步将切割片材贴合在粘接剂层的另一面上。然后,通过切割,在贴合有粘接剂层的状态下使半导体晶片单片化,从而得到半导体元件。接着,拾取带粘接剂层的半导体元件,并与支承部件接合。然后,经由引线粘接、密封等组装工序,得到半导体装置。
但是,使用了粘接片材的半导体装置的制造中,存在由于粘接片材缠粘住切割时的切断刀片,切断性降低且半导体芯片损坏而成品率降低的问题。另外,基板等支承部件中存在配线图案等高度差,因此,易于在高度差部分残留空隙。空隙成为使可靠性变差的原因。
另外,专利文献2中,公开有含有放射线聚合性化合物、光引发剂、热固化性树脂的粘接剂。但是,这种粘接剂中,光固化后的弹性模量较高,在具有配线图案的高度差的基板中,存在粘接剂层的厚度精度变低,而产生空隙,从而可靠性变低的问题。
现有技术文献
专利文献
专利文献1:日本特开平3-192178号公报
专利文献2:WO2011/058998A1
发明内容
发明所要解决的技术问题
本发明的目的在于,提供一种使用喷墨装置进行涂布所使用喷墨用光及热固化性粘接剂,其粘接剂固化形成的粘接剂层的厚度精度能够得到提高,并且能够使粘接剂层上不易产生空隙。本发明的另一目的在于,提供使用所述粘接剂的半导体装置的制造方法、以及使用了所述粘接剂的电子部件。
用于解决问题的技术方案
根据本发明的宽泛方面,提供一种喷墨用光及热固化性粘接剂,其含有光固化性化合物、热固化性化合物、光聚合引发剂、和热固化剂,以365nm下的照度为100mW/cm2的方式对粘接剂照射累计光量1000mJ/cm2的光而得到B阶段化粘接剂时,所述B阶段化粘接剂在25℃下的弹性模量为5.0×102Pa以上且8.0×104Pa以下
本发明的粘接剂的某特定方面,所述光固化性化合物含有:具有1个光固化性反应基团的光固化性化合物、和具有2个以上光固化性反应基团的光固化性化合物。
本发明的粘接剂的某特定方面,所述具有1个光固化性反应基团的光固化性化合物的所述光固化性反应基团为(甲基)丙烯酰基,所述具有2个光固化性反应基团的光固化性化合物的所述光固化性反应基团为(甲基)丙烯酰基。
本发明的粘接剂的某特定方面,所述粘接剂不含或含有光及热固化性化合物,在所述粘接剂不含所述光及热固化性化合物的情况下,在所述光固化性化合物总量100重量%中,所述具有2个以上光固化性反应基团的光固化性化合物的含量为0.1重量%以上且30重量%以下,在所述粘接剂含有所述光及热固化性化合物的情况下,在所述光固化性化合物的总量与所述光及热固化性化合物的总计100重量%中,所述具有2个以上光固化性反应基团的光固化性化合物的含量为0.1重量%以上且30重量%以下。
本发明的粘接剂的某特定方面,所述具有1个光固化性反应基团的光固化性化合物包含(甲基)丙烯酸2-乙基己酯
本发明的粘接剂的某特定方面,所述热固化性化合物包含具有环氧基或硫化乙烯基的热固化性化合物。
本发明的粘接剂的某特定方面,所述粘接剂含有光及热固化性化合物。
本发明的粘接剂的某特定方面,所述热固化性化合物包含具有环氧基或硫化乙烯基的热固化性化合物,所述光及热固化性化合物包含具有(甲基)丙烯酰基的光及热固化性化合物。
本发明的粘接剂的某特定方面,所述光及热固化性化合物包含(甲基)丙烯酸4-羟丁酯缩水甘油醚。
本发明的粘接剂的某特定方面,以JIS K2283为基准测定的在25℃及10rpm下的粘度为5mPa·s以上且1600mPa·s以下。
本发明的粘接剂的某特定方面,所述粘接剂其不含或含有溶剂,在所述粘接剂含有所述填料的情况下,所述填料的含量为1重量%以下。
本发明的粘接剂的某特定方面,所述粘接剂不含或含有填料,在所述粘接剂含有所述填料的情况下,所述填料的含量为1重量%以下。
根据本发明的宽泛方面,提供一种半导体装置的制造方法,其包括:使用喷墨装置在半导体元件搭载用支承部件或半导体元件的表面上涂布所述的喷墨用光及热固化性粘接剂,从而形成粘接剂层的涂布工序;通过照射光使所述粘接剂层发生固化,形成B阶段化粘接剂层的工序;在所述B阶段化粘接剂层的与所述支承部件或所述半导体元件侧相反的表面上叠层半导体元件的工序;在叠层了所述半导体元件之后,使所述B阶段化粘接剂层进行热固化的工序。
根据本发明的宽泛方面,提供一种半导体装置的制造方法,其包括:使用喷墨装置在半导体晶片的表面上喷出所述的喷墨用光及热固化性粘接剂,形成粘接剂层的涂布工序;通过照射光使所述粘接剂层发生固化,形成B阶段化粘接剂层的工序;在所述B阶段化粘接剂层的与所述半导体晶片侧相反的表面上叠层保护玻璃,得到叠层体的工序;使所述叠层体中的所述B阶段化粘接剂层进行热固化的工序;在热固化后切断所述叠层体的工序。
本发明的半导体装置的制造方法的某特定方面,将所述B阶段化粘接剂层在25℃下的弹性模量调整为5.0×102Pa以上且8.0×104Pa以下。
本发明的半导体装置的制造方法的某特定方面中,所述喷墨装置具有:油墨罐,其贮存所述喷墨用光及热固化性粘接剂;喷出部,其与所述油墨罐连接且喷出所述喷墨用光及热固化性粘接剂;循环流路部,其一端与所述喷出部连接在一起,其另一端与所述油墨罐连接在一起,且在其内部流通所述喷墨用光及热固化性粘接剂,在所述涂布工序中,在所述喷墨装置内,使所述喷墨用光及热固化性粘接剂从所述油墨罐移动至所述喷出部,然后,使未从所述喷出部喷出的所述喷墨用光及热固化性粘接剂在所述循环流路部内流动并向所述油墨罐移动,由此,一边使所述喷墨用光及热固化性粘接剂循环一边进行涂布。
本发明的半导体装置的制造方法的某特定方面,循环的所述喷墨用光及热固化性粘接剂的温度为40℃以上且100℃以下。
根据本发明的宽泛方面,提供一种电子部件,其具备:第一电子部件主体、第二电子部件主体、和将所述第一电子部件主体和所述第二电子部件主体连接在一起的粘接剂层,所述粘接剂层为所述的喷墨用光及热固化性粘接剂的固化物。
本发明的电子部件的某特定方面,所述第一电子部件主体为半导体元件搭载用支承部件或半导体元件,所述第二电子部件主体为半导体元件。
发明的效果
本发明的喷墨用光及热固化性粘接剂含有光固化性化合物、热固化性化合物、光聚合引发剂、热固化剂,在以365nm下的照度为100mW/cm2的方式对粘接剂照射累计光量1000mJ/cm2的光而得到B阶段化粘接剂时,所述B阶段化粘接剂在25℃下的弹性模量为5.0×102Pa以上且8.0×104Pa以下,因此,在使用喷墨装置对本发明的喷墨用光及热固化性粘接剂进行涂布时,可以提高粘接剂固化后的粘接剂层的厚度精度,可以使粘接剂层上不易产生空隙。
附图说明
图1是示意性地示出使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的正面剖视图;
图2(a)~2(e)是用于说明图1所示的电子部件的制造方法的各工序的剖视图;
图3是表示图2所示的电子部件的制造方法中使用的喷墨装置的一例的概略结构图;
图4是表示图2所示的电子部件的制造方法中使用的喷墨装置的另一例的概略结构图;
图5是示意性地表示图1所示的电子部件的变形例的正面剖视图;
图6是示意性地表示使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的第一变形例的正面剖视图;
图7是示意性地表示使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的第二变形例的正面剖视图。
标记说明
1…电子部件
1A…一次叠层体
2…第一电子部件主体
3…粘接剂层(加热后)
4…第二电子部件主体
11、11X…喷墨装置
12…粘接剂层
12A…利用第一光照射部经过光照射的粘接剂层
12B…利用第二光照射部经过光照射的粘接剂层
13…第一光照射部
14…第二光照射部
21…油墨罐
22…喷出部
23、23X…循环流路部
23A…缓冲罐
23B…泵
31…电子部件
32…多层粘接剂层(加热后)
32A、32B、32C…粘接剂层(加热后)
51、71…半导体装置
52…叠层结构体
53、53A…基板
53a…第一连接端子
53b…第二连接端子
54、61、72…粘接剂层
55…第二半导体晶片
55a、73a…连接端子
56、63、74…配线
62、73…第一半导体晶片
62a…连接端子
具体实施方式
以下,详细地说明本发明。
本发明的喷墨用光及热固化性粘接剂(以下,有时简称为粘接剂)使用喷墨装置涂布而使用。本发明的粘接剂与通过丝网印刷涂布的粘接剂及通过点胶法涂布的粘接剂等不同。
本发明的粘接剂通过光的照射及加热固化而使用。本发明的粘接剂优选在通过光的照射进行固化后,通过加热固化使用。本发明的粘接剂是光及热固化性粘接剂,具有光固化性和热固化性。本发明的粘接剂与仅进行光固化的粘接剂及仅进行热固化的的粘接剂等不同。
本发明的粘接剂含有光固化性化合物(通过光的照射可固化的固化性化合物)、热固化性化合物(通过加热可固化的固化性化合物)、光聚合引发剂和热固化剂。
以365nm下的照度为100mW/cm2的方式对本发明的粘接剂照射累计光量1000mJ/cm2的光,得到B阶段化粘接剂。本发明中,该B阶段化粘接剂在25℃下的弹性模量为5.0×102Pa以上且8.0×104Pa以下。此外,照度是利用Ushio电机株式会社制造“UIT-201”测定的值。
本发明的粘接剂中,具备上述结构,因此,在使用喷墨装置对本发明的喷墨用光及热固化性粘接剂进行涂布并接着固化时,可以提高粘接剂固化而成的粘接剂层的厚度精度。并且,在粘接剂层上可以不易产生空隙。另外,本发明中,可以使吸湿性及冷热循环特性良好。
B阶段化粘接剂在25℃下的弹性模量优选为5.0×102Pa以上,更优选为8.0×102Pa以上,优选为8.0×104Pa以下,更优选为5.0×104Pa以下。上述弹性模量为上述下限以上时,不易引起半导体芯片等的移动。上述弹性模量为上述上限以下时,半导体芯片等在贴合后的粘接力变得良好,并且抑制空隙的产生。
上述弹性模量使用Ta-instruments公司制造的粘弹性测定装置ARES,在25℃下、以测定板:直径8mm的平行板及频率为1Hz进行测定。此外,本说明书中,上述弹性模量是指储能弹性模量(G’)。
本发明的粘接剂使用喷墨装置进行涂布,因此,通常在25℃下为液状。上述粘接剂在25℃及10rpm下的粘度优选为3mPa·s以上,更优选为5mPa·s以上,更进一步优选为10mPa·s以上,进一步优选为160mPa·s以上,优选为2000mPa·s以下,更优选为1600mPa·s以下,进一步优选为1500mPa·s以下。从更进一步提高粘接剂层的厚度精度,并且在粘接剂层上更进一步不易产生空隙的观点出发,上述粘接剂在25℃及10rpm下的粘度特别优选为160mPa·s以上且1600mPa·s以下。
上述粘度通过以JIS K2283为基准,使用E型粘度计(东机产业株式会社制造“TVE22L”)在25℃下测定。
本发明的半导体装置的制造方法具备:在半导体元件搭载用的支承部件或半导体元件的表面上,使用喷墨装置对上述的喷墨用光及热固化性粘接剂进行涂布,形成粘接剂层的涂布工序;通过照射光而进行上述粘接剂层的固化,形成B阶段化粘接剂层的工序;在上述B阶段化粘接剂层的与上述支承部件或上述半导体元件侧相反的表面上叠层半导体元件的工序;在上述半导体元件进行叠层后,使上述B阶段化粘接剂层热固化的工序。
另外,本发明涉及的半导体装置的制造方法包括:在半导体晶片的表面上,使用喷墨装置使上述的喷墨用光及热固化性粘接剂喷出,并形成粘接剂层的涂布工序;通过照射光而使上述粘接剂层进行固化,从而形成B阶段化粘接剂层的工序;在上述B阶段化粘接剂层的与上述半导体晶片侧相反的表面上叠层保护玻璃,得到叠层体的工序;使上述叠层体中的上述B阶段化粘接剂层热固化的工序;在热固化后切断上述叠层体的工序。
如果使用本发明的粘接剂,则可以提高粘接剂层的厚度精度,更进一步不易在粘接剂层上产生空隙。因此,本发明的粘接剂可以适用于本发明的半导体装置的制造方法。
优选在利用上述喷墨装置进行喷出时,以加温至40℃以上且100℃以下的状态下喷出上述粘接剂。从更进一步高精度地形成粘接剂层,且更进一步难以在粘接剂层产生空隙的观点出发,优选一边使上述喷墨用光及热固化性粘接剂循环,一边进行涂布。
上述喷墨装置优选具有:贮存上述粘接剂的油墨罐;与上述油墨罐连接且使上述粘接剂喷出的喷出部;一端与上述喷出部连接,另一端与上述油墨罐连接,且在内部流通上述粘接剂的循环流路部。
在涂布上述粘接剂时,在上述喷墨装置内,使上述粘接剂从上述油墨罐移动至上述喷出部后,使未从上述喷出部喷出的上述粘接剂在上述循环流路部内流通并移动至上述油墨罐,由此,一边使上述粘接剂循环,一边进行涂布。如果使上述粘接剂一边循环一边涂布,则可更进一步有效地得到本发明的效果。即,可以更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙。
另外,本发明中,可以高精度地形成厚度较厚的粘接剂层。另外,本发明中,即使是多层化的粘接剂层,也可以微细且高精度地形成。
以下,参照附图说明本发明具体的实施方式及实施例,由此,明确本发明。
图1是示意性地示出使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的正面剖视图。
图1所示的电子部件1具备:第一电子部件主体2、配置于第一电子部件主体2的表面上的粘接剂层3、配置于粘接剂层3的表面上的第二电子部件主体4。第二电子部件主体4配置于粘接剂层3的与第一电子部件主体2侧的相反侧。在粘接剂层3的第一表面上,配置有第一电子部件主体2。在粘接剂层3的与第一表面的相反侧的第二表面上,配置有第二电子部件主体4。粘接剂层3是光及热固化后的粘接剂层,是固化后的粘接剂层(固化物层)。为了形成粘接剂层3,使用本发明一个实施方式的喷墨用光及热固化性粘接剂。该喷墨用光及热固化性粘接剂使用喷墨装置涂布,且在通过照射光进行固化后,通过加热进行固化,形成粘接剂层3。
作为上述电子部件主体,具体而言,可举出:电路基板、半导体晶片、切割后的半导体晶片(分割而成的半导体晶片、半导体元件)、保护玻璃、电容器、二极管、印刷基板、挠性印刷基板、玻璃环氧基板及玻璃基板等。上述电子部件主体可以是半导体元件搭载用的支承部件。
从特别要求高精度地形成的粘接剂层出发,上述电子部件主体优选为电路基板、保护玻璃、半导体晶片或切割后的半导体晶片。
从特别要求高精度地形成的粘接剂层出发,上述第一电子部件主体优选为半导体元件搭载用的支承部件或半导体元件,更优选为电路基板或半导体元件,进一步优选为电路基板或切割后的半导体晶片。从特别要求高精度地形成的粘接剂层出发,上述第二电子部件主体优选为半导体元件,更优选为切割后的半导体晶片。
从特别要求高精度地形成的粘接剂层出发,优选上述第一电子部件主体为电路基板或切割后的半导体晶片,且上述第二电子部件主体为切割后的半导体晶片,进一步更优选上述第一电子部件主体为电路基板,且上述第二电子部件主体为切割后的半导体晶片。上述电子部件优选为半导体装置用电子部件。
上述电子部件优选具备半导体元件,优选为半导体装置。
以下,参照图2(a)~图2(e)说明图1所示的电子部件的制造方法的一个例子。
首先,如图2(a)所示,在第一电子部件主体2上,使用喷墨装置11对喷墨用光及热固化性粘接剂进行涂布,从而形成粘接剂层12(涂布工序)。在此,在第一电子部件主体2的表面上整体性地涂布粘接剂。在涂布后,粘接剂的液滴互相混合,成为图2(b)所示的状态的粘接剂层12。
如图3所示,喷墨装置11在内部具有油墨罐21、喷出部22和循环流路部23。
循环流路部23在循环流路部23内具有缓冲罐23A和泵23B。但是,如图4所示的喷墨装置11X所示,循环流路部23X可以在循环流路部23X内不具有缓冲罐和泵。上述循环流路部优选在上述循环流路部内具有上述缓冲罐,优选具有上述泵。另外,上述循环流路部除缓冲罐及泵以外,可以在上述循环流路部内具有流速计、温度计、过滤器及液面传感器等。
在油墨罐21中贮存有上述粘接剂。从喷出部22(喷墨头)喷出上述粘接剂。喷出部22包含喷出喷嘴。油墨罐21连接有喷出部22。油墨罐21和喷出部22经由流路连接。循环流路部23的一端连接于喷出部22,另一端连接于油墨罐21。在循环流路部23的内部流通上述粘接剂。
在具备缓冲罐23A或泵23B的情况下,缓冲罐23A及泵23B优选分别配置在喷出部22和油墨罐21之间。缓冲罐23A配置于比泵23B更靠近喷出部22侧。泵23B配置于比缓冲罐23A更靠近油墨罐21侧。在缓冲罐23A中临时贮存有上述粘接剂。
作为上述喷出部,可举出:热方式、气泡喷射方式、电磁阀方式或压电方式的喷墨头等。另外,作为上述喷出部内的循环流路部,可举出:从共通循环流路(分流器)向喷出喷嘴分叉的端部喷射型;或油墨在喷出喷嘴循环的侧喷型。从提高粘接剂的喷出性且更进一步提高微细的粘接剂层的形成精度的观点出发,优选上述喷墨装置为使用压电方式的喷墨头的喷墨装置,在上述涂布工序中,通过压电元件的作用来涂布上述粘接剂。
关于上述粘接剂的循环方法,可利用油墨的自重或利用泵等进行加压、减压等来进行循环。这些方法可以组合多种使用。作为泵,可举出:汽缸方式的无脉动泵、螺旋桨泵、齿轮泵及隔膜泵等。从提高循环效率且更进一步提高微细的粘接剂层的形成精度的观点出发,上述循环流路部优选在上述循环流路部内包含使上述粘接剂转移的泵。
就上述喷出部的涂出喷嘴而言,优选保持适当的压力,且在该范围内压力变动(脉动)少。在使用泵等的情况下,为了抑制泵的脉动,优选在泵和上述喷出部之间设置衰减器。作为这种衰减器,可举出临时贮存上述粘接剂的缓冲罐或膜式的减震器等。
从更进一步高精度地形成固化的粘接剂层的观点出发,上述循环流路部优选在上述循环流路部内含有临时贮存有上述粘接剂的缓冲罐。
在一边对上述粘接剂加热一边使其循环的情况下,通过向上述油墨罐内导入加热器或对上述循环流路部使用加热器,可以调节上述粘接剂的温度。
在一边对上述粘接剂加热一边使其循环的情况下,通过向油墨罐21内导入加热器,或对循环流路部23、循环流路部23X使用加热器,可以调节上述粘接剂的温度。
上述涂布工序中,在喷墨装置11内,使上述粘接剂从油墨罐21移动至喷出部22后,使未从喷出部22喷出的上述粘接剂在循环流路部23内流通并移动至油墨罐21。由此,优选在上述涂布工序中,使上述粘接剂一边循环,一边涂布。
接着,如图2(b)和图2(c)所示,在上述的涂布工序后,由第一光照射部13对粘接剂层12照射光,使粘接剂层12的固化进行(第一光照射工序)。由此,可以由第一光照射部13形成经过光照射的粘接剂层12A。粘接剂层12A为预固化物,即B阶段化粘接剂层。优选该上述B阶段化粘接剂层在25℃下的弹性模量设为5.0×102Pa以上、8.0×104Pa以下。在从后述的第二光照射部14照射光的情况下,从第一光照射部13照射的光的波长或照射强度与由后述的第二光照射部14照射的光的波长或照射强度可以相同,也可以不同。从更进一步提高粘接剂层的固化性的观点出发,优选由第二光照射部14照射的光照射强度比从第一光照射部13照射的光的照射强度强。在使用光固化性化合物和光及热固化性化合物的情况下,为了控制光固化性,优选进行上述第一光照射工序和后述的第二光照射工序。
另外,“由第一光照射部13对粘接剂层12照射光,使粘接剂层12进行固化”中,包含使反应进行而成为增粘状态。
作为进行光照射的装置,没有特别限定,可举出产生紫外线的发光二极管(UV-LED)、金属卤化物灯、高压水银灯、及超高压水银灯等。从更进一步提高粘接剂层的形成精度的观点出发,特别优选第一光照射部使用UV-LED。
接着,如图2(c)、图2(d)所示,可以在上述第一光照射工序后,由与第一光照射部13不同的第二光照射部14对经过第一光照射部13照射了光的粘接剂层12A照射光,使粘接剂层12A的固化进一步进行(第二光照射工序)。由此,可形成经过第二光照射部14照射了光的粘接剂层12B。粘接剂层12B是预固化物,即B阶段化粘接剂层。优选将该上述B阶段化粘接剂层的表面在25℃下的弹性模量设为5.0×102Pa以上、8.0×104Pa以下。此外,上述第二光照射工序后的B阶段化粘接剂层和上述第一光照射后的B阶段化粘接剂层中,优选将上述第一光照射后的B阶段化粘接剂层的表面在25℃下的弹性模量设为5.0×102Pa以上、8.0×104Pa以下。更优选将上述第二光照射工序后的B阶段化粘接剂层和上述第一光照射后的B阶段化粘接剂层这两层的表面在25℃下的弹性模量设为5.0×102Pa以上、8.0×104Pa以下。
上述的第二光照射工序优选在后述的叠层工序前进行,且优选在加热工序前进行。从更进一步高精度地形成固化的粘接剂层的观点出发,优选进行上述第二光照射工序。但是,未必一定进行上述第二光照射工序,可以在上述第一光照射工序后进行后述的叠层工序,而不进行上述第二光照射工序。
接着,如图2(d)、图2(e)所示,在上述第二光照射工序后,在经过光照射的粘接剂层12B上配置第二电子部件主体4,对第一电子部件主体2和第二电子部件主体4隔着经过光照射的粘接剂层12B施加压力而使其贴合,得到一次叠层体1A(叠层工序)。此外,在上述第一光照射工序后,在未进行上述第二光照射工序时,在经过光照射的粘接剂层12A上配置第二电子部件主体4,对第一电子部件主体2和第二电子部件主体4隔着经过光照射的粘接剂层12A施加压力使其贴合,得到一次叠层体(叠层工序)。
接着,在上述叠层工序后,加热一次叠层体1A,使第一电子部件主体2和第二电子部件主体4之间的粘接剂层12B固化,得到电子部件(加热工序)。如上所述,可以得到图1所示的电子部件1。
此外,通过重复进行上述涂布工序和上述第一光照射工序,也可以使粘接剂层多层化,而形成多层粘接剂层。如图5所示,可以得到电子部件31,其具备多个粘接剂层32A、粘接剂层32B和粘接剂层32C叠层而成的粘接剂层32。
在上述电子部件的制造方法中,从提高粘接剂的喷出性及转移性,且更进一步高精度地形成固化后的粘接剂层的观点出发,循环的上述粘接剂的温度优选为30℃以上,更优选为40℃以上,优选为120℃以下,更优选为100℃以下。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述叠层工序中,在贴合时施加的压力优选为0.01MPa以上,更优选为0.05MPa以上,优选为10MPa以下,更优选为8MPa以下。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述叠层工序中,贴合时的温度优选为30℃以上,更优选为40℃以上,优选为150℃以下,更优选为130℃以下。
上述粘接剂具有光固化性及热固化性。上述粘接剂含有光固化性化合物、热固化性化合物、光聚合引发剂和热固化剂。上述粘接剂优选含有光及热固化性化合物(通过光的照射及加热两种方式能够固化的固化性化合物)。上述粘接剂优选含有固化促进剂。
以下,说明上述粘接剂所含有的各成分的详情。
(光固化性化合物)
上述光固化性化合物是具有光固化性反应基团的化合物。作为上述光固化性化合物,可举出:具有(甲基)丙烯酰基的固化性化合物、具有乙烯基的固化性化合物及具有马来酸酐缩亚胺基的固化性化合物等。从更进一步高精度地形成固化后的粘接剂层的观点出发,上述光固化性化合物的上述光固化性反应基团优选为(甲基)丙烯酰基,上述光固化性化合物优选具有(甲基)丙烯酰基(1个以上)。上述光固化性化合物可以单独使用一种,也可以组合使用两种以上。
在本说明书中,上述具有(甲基)丙烯酰基的固化性化合物是指具有甲基丙烯酰基及丙烯酰基中至少一种的化合物。
作为上述光固化性化合物,可以使用具有两个以上光固化性反应基团的多官能化合物(光反应性化合物)(A1),也可以使用具有1个光固化性反应基团的单官能化合物(光反应性化合物)(A2)。从更进一步高精度地形成固化后的粘接剂层的观点出发,多官能化合物(A1)的光固化性反应基团优选为(甲基)丙烯酰基。从更进一步高精度地形成固化后的粘接剂层的观点出发,单官能化合物(A2)的光固化性反应基团优选为(甲基)丙烯酰基。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述粘接剂优选含有具有1个(甲基)丙烯酰基的单官能化合物(A2)和具有两个以上(甲基)丙烯酰基的多官能化合物(A1)作为上述光固化性化合物。
作为上述多官能化合物(A1),可举出:多元醇的(甲基)丙烯酸加成物、多元醇的环氧烷烃改性物的(甲基)丙烯酸加成物、聚氨酯(甲基)丙烯酸酯类、及聚酯(甲基)丙烯酸酯类等。作为上述多元醇,可举出:二乙二醇、三乙二醇、聚乙二醇、二丙二醇、三丙二醇、聚丙二醇、三羟甲基丙烷、环己烷二甲醇、三环癸烷二甲醇、双酚A的环氧烷烃加成物及季戊四醇等。
上述多官能化合物(A1)可以是二官能(甲基)丙烯酸酯,也可以是三官能(甲基)丙烯酸酯,也可以是四官能以上的(甲基)丙烯酸酯。
作为二官能(甲基)丙烯酸酯,例如可举出:1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、2,4-二甲基-1,5-戊二醇二(甲基)丙烯酸酯、丁基乙基丙二醇(甲基)丙烯酸酯、乙氧基化环己烷甲醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、低聚乙二醇二(甲基)丙烯酸酯、乙二醇二(甲基)丙烯酸酯、2-乙基-2-丁基丁二醇二(甲基)丙烯酸酯、2-乙基-2-丁基丙二醇二(甲基)丙烯酸酯、三环癸烷二(甲基)丙烯酸酯、及二丙二醇二(甲基)丙烯酸酯等。
作为三官能(甲基)丙烯酸酯,例如可举出:三羟甲基丙烷三(甲基)丙烯酸酯、三羟甲基乙烷三(甲基)丙烯酸酯、三羟甲基丙烷的环氧烷烃改性三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇三(甲基)丙烯酸酯、三羟甲基丙烷三((甲基)丙烯酰氧丙基)醚、异氰脲酸环氧烷烃改性三(甲基)丙烯酸酯、丙酸二季戊四醇三(甲基)丙烯酸酯、三((甲基)丙烯酰氧乙基)异氰脲酸酯、及山梨醇三(甲基)丙烯酸酯等。
作为四官能(甲基)丙烯酸酯,例如可举出:季戊四醇四(甲基)丙烯酸酯、山梨醇四(甲基)丙烯酸酯、二三羟甲基丙烷四(甲基)丙烯酸酯、及丙酸二季戊四醇四(甲基)丙烯酸酯等。
作为五官能(甲基)丙烯酸酯,例如可举出山梨醇五(甲基)丙烯酸酯及二季戊四醇五(甲基)丙烯酸酯。
作为六官能(甲基)丙烯酸酯,例如可举出:二季戊四醇六(甲基)丙烯酸酯、山梨醇六(甲基)丙烯酸酯、及磷腈的环氧烷烃改性六(甲基)丙烯酸酯等。
上述“(甲基)丙烯酸酯”的术语表示丙烯酸酯或甲基丙烯酸酯。上述“(甲基)丙烯酸”的术语表示丙烯酸或甲基丙烯酸。
上述多官能化合物(A1)优选为具有多环骨架或聚氨酯骨架,且具有两个以上的(甲基)丙烯酰基的多官能化合物(A1)。通过使用多官能化合物(A1),可以提高上述粘接剂的固化物的耐湿热性。因此,可以提高电子部件的可靠性。上述多官能化合物(A1)可以具有多环骨架,也可以具有聚氨酯骨架。
上述多官能化合物(A1)只要具有多环骨架或聚氨酯骨架且具有两个以上(甲基)丙烯酰基就没有特别限定。作为多官能化合物(A1),可以使用具有多环骨架或聚氨酯骨架,且具有两个以上(甲基)丙烯酰基的现有公知多官能化合物。上述多官能化合物(A1)具有两个以上(甲基)丙烯酰基,因此,由于光的照射而聚合,从而发生固化。上述多官能化合物(A1)可以单独使用一种,也可以组合使用两种以上。
作为具有多环骨架且具有两个以上(甲基)丙烯酰基的多官能化合物的具体例,可举出:三环癸烷二甲醇二(甲基)丙烯酸酯、异冰片基二甲醇二(甲基)丙烯酸酯及二环戊烯基二甲醇二(甲基)丙烯酸酯等。其中,从更进一步提高固化物的耐湿热性的观点出发,上述多官能化合物(A1)优选为三环癸烷二甲醇二(甲基)丙烯酸酯。
上述多官能化合物(A1)及后述的单官能化合物(A2)中的上述“多环骨架”表示连续地具有多个环状骨架的结构。具体而言,多环骨架是两个以上的环以共同具有两个以上的原子的形式成为一体的骨架,即具有缩合环的骨架。上述多环骨架不是例如在两个环之间存在亚烷基的骨架。作为多官能化合物(A1)及单官能化合物(A2)中的上述多环骨架,分别可举出:多环脂环式骨架及多环芳香族骨架等。
作为上述多环脂环式骨架,可举出:双环烷烃骨架、三环烷烃骨架、四环烷烃骨架及异冰片基骨架等。
作为上述芳香族骨架,可举出:萘环骨架、蒽环骨架、菲环骨架、四苯环骨架、稠二萘环骨架、9,10-苯并菲环骨架、苯并蒽环骨架、芘环骨架、并五苯环骨架、苉环骨架及苝环骨架等。
从更进一步提高绝缘可靠性或粘接可靠性的观点出发,上述光固化性化合物优选含有具有二环戊二烯骨架的光固化性化合物。
具有聚氨酯骨架且具有两个以上(甲基)丙烯酰基的多官能化合物,没有特别限定,例如通过以下方法得到。使多元醇和2官能以上的异氰酸酯反应,并进一步使具有醇或酸基的(甲基)丙烯酸单体与剩余的异氰酸酯基反应。也可以使具有羟基的(甲基)丙烯酸单体与2官能以上的异氰酸酯反应。具体而言,例如,使三羟甲基丙烷1摩尔和异佛尔酮二异氰酸酯3摩尔在锡类催化剂下反应。通过使得到的化合物中残留的具有异氰酸酯基和2摩尔的羟基的丙烯酸单体即丙烯酸羟基乙酯反应,可得到上述聚氨酯改性(甲基)丙烯酸类化合物。
作为上述多元醇,没有特别限定,例如可举出:乙二醇、甘油、山梨糖醇、三羟甲基丙烷、及(聚)丙二醇等。
上述异氰酸酯只要为2官能以上即可,没有特别限定。作为上述异氰酸酯,例如,可举出:异佛尔酮二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯、二苯基甲烷-4,4’-二异氰酸酯(MDI)、氢化MDI、聚合型MDI、1,5-萘二异氰酸酯、降冰片烷二异氰酸酯、联甲苯胺二异氰酸酯、苯二甲基二异氰酸酯(XDI)、氢化XDI、赖氨酸二异氰酸酯、三苯基甲烷三异氰酸酯、三(异氰酸酯苯基)硫代磷酸酯、四甲基二甲苯二异氰酸酯、及1,6,10-十一碳烷三异氰酸酯等。
作为上述单官能化合物(A2)的具体例,可举出:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸3-羟丙酯、(甲基)丙烯酸2-羟丁酯、(甲基)丙烯酸3-羟丁酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸烯丙酯、(甲基)丙烯酸苄基酯、(甲基)丙烯酸环己酯、(甲基)丙烯酸苯酯、(甲基)丙烯酸2-甲氧基乙酯、(甲基)丙烯酸2-苯氧基乙酯、(甲基)丙烯酸甲氧基二乙二醇酯、(甲基)丙烯酸甲氧基三乙二醇酯、(甲基)丙烯酸甲氧基丙二醇酯、(甲基)丙烯酸甲氧基二丙二醇酯、(甲基)丙烯酸异冰片基酯、(甲基)丙烯酸二环戊二烯酯、(甲基)丙烯酸2-羟基-3-苯氧基丙基酯、单(甲基)丙烯酸甘油酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸二羟基环戊二烯酯、(甲基)丙烯酸二环戊烯酯、(甲基)丙烯酸二环戊烯基氧基乙酯、(甲基)丙烯酸二环戊酯、(甲基)丙烯酸萘酯、(甲基)丙烯酸月桂酯、及(甲基)丙烯酸硬脂酯等。
作为上述具有乙烯基的化合物,可举出:乙烯基醚类、乙烯衍生物、苯乙烯、氯甲基苯乙烯、α-甲基苯乙烯、马来酸酐、二环戊二烯、N-乙烯基吡咯烷酮及N-乙烯基甲酰胺等。
作为上述具有马来酸酐缩亚胺基的化合物,没有特别限定,例如可举出:N-甲基马来酸酐缩亚胺、N-乙基马来酸酐缩亚胺、N-己基马来酸酐缩亚胺、N-丙基马来酸酐缩亚胺、N-丁基马来酸酐缩亚胺、N-辛基马来酸酐缩亚胺、N-十二碳烷基马来酸酐缩亚胺、N-环己基马来酸酐缩亚胺、N-苯基马来酸酐缩亚胺、N-对羧基苯基马来酸酐缩亚胺、N-对羟基苯基马来酸酐缩亚胺、N-对氯苯基马来酸酐缩亚胺、N-对甲苯基马来酸酐缩亚胺、N-对二甲苯基马来酸酐缩亚胺、N-邻氯苯基马来酸酐缩亚胺、N-邻甲苯基马来酸酐缩亚胺、N-苄基马来酸酐缩亚胺、N-2,5-二乙基苯基马来酸酐缩亚胺、N-2,5-二甲基苯基马来酸酐缩亚胺、N-间甲苯基马来酸酐缩亚胺、N-α-萘基马来酸酐缩亚胺、N-邻二甲苯基马来酸酐缩亚胺、N-间二甲苯基马来酸酐缩亚胺、双马来酸酐缩亚胺甲烷、1,2-双马来酸酐缩亚胺乙烷、1,6-双马来酸酐缩亚胺己烷、双马来酸酐缩亚胺十二碳烷、N,N’-间亚苯基二马来酸酐缩亚胺、N,N’-对亚苯基二马来酸酐缩亚胺、4,4’-双马来酸酐缩亚胺苯基醚、4,4’-双马来酸酐缩亚胺二苯基甲烷、4,4’-双马来酸酐缩亚胺-二(3-甲基苯基)甲烷、4,4’-双马来酸酐缩亚胺-二(3-乙基苯基)甲烷、4,4’-双马来酸酐缩亚胺-二(3-甲基-5-乙基-苯基)甲烷、N,N’-(2,2-双-(4-苯氧基苯基)丙烷)二马来酸酐缩亚胺、N,N’-2,4-甲苯二马来酸酐缩亚胺、N,N’-2,6-甲苯二马来酸酐缩亚胺、及N,N’-间苯二甲二马来酸酐缩亚胺等。
从更进一步提高粘接剂层的厚度精度,并且更进一步难以在粘接剂层上产生空隙的观点出发,上述光固化性化合物优选含有具有两个以上光固化性反应基团的光固化性化合物。
从更进一步提高粘接剂层的厚度精度,且更进一步不易在粘接剂层上产生空隙的观点出发,优选上述光固化性化合物含有具有1个光固化性反应基团的光固化性化合物,更优选含有具有1个光固化性反应基团的光固化性化合物和具有两个以上光固化性反应基团的光固化性化合物。
上述光固化性反应基团优选为含有聚合性不饱和双键的基团,更优选为(甲基)丙烯酰基。
从更进一步提高固化的粘接剂层的厚度精度的观点出发,优选具有1个上述光固化性反应基团的光固化性化合物含有(甲基)丙烯酸2-乙基己酯。
从更进一步高精度地形成固化的粘接剂层的观点出发,上述粘接剂100重量%中,上述光固化性化合物的含量优选为10重量%以上,更优选为20重量%以上,优选为80重量%以下,更优选为70重量%以下。从更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙的观点出发,上述粘接剂100重量%中,上述光固化性化合物的含量特别优选为10重量%以上、80重量%以下。
从更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙的观点出发,在粘接剂不含有后述的光及热固化性化合物的情况下,上述光固化性化合物整体的100重量%,在粘接剂含有后述的光及热固化性化合物的情况下,上述光固化性化合物的整体和光及热固化性化合物的总计100重量%中,具有两个以上上述光固化性反应基团的光固化性化合物的含量优选为0.1重量%以上,更优选为0.5重量%以上,优选为100重量%(总量)以下,更优选为30重量%以下,进一步优选为20重量%以下。
从更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙的观点出发,在粘接剂不含有后述的光及热固化性化合物的情况下,上述光固化性化合物整体的100重量%,在粘接剂含有后述的光及热固化性化合物的情况下,上述光固化性化合物的整体和光及热固化性化合物总计的100重量%中,具有1个上述光固化性反应基团的光固化性化合物的含量优选为1重量%以上,更优选为10重量%以上,优选为100重量%(总量)以下,更优选为99重量%以下,进一步优选为90重量%以下。
(光及热固化性化合物)
从更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙,且提高冷热循环等的可靠性的观点出发,上述粘接剂优选含有光及热固化性化合物。作为上述光及热固化性化合物,可举出具有各种光固化性官能基(光固化性反应基团)和各种热固化性官能基的化合物。从更进一步高精度地形成固化的粘接剂层的观点出发,上述光及热固化性化合物的上述光固化性反应基团优选为(甲基)丙烯酰基。从更进一步高精度地形成固化的粘接剂层的观点出发,上述光及热固化性化合物优选具有(甲基)丙烯酰基和环状醚基或环状硫醚基,且优选具有(甲基)丙烯酰基和环状醚基,优选具有(甲基)丙烯酰基和环氧基。上述光及热固化性化合物可以具有环状硫醚基。上述光及热固化性化合物可以单独使用一种,也可以组合使用两种以上。
作为上述光及热固化性化合物,没有特别限定,但可举出:具有(甲基)丙烯酰基和环氧基的化合物、环氧化合物的部分(甲基)丙烯酸化物、聚氨酯改性(甲基)丙烯酸环氧化合物等。
作为上述具有(甲基)丙烯酰基和环氧基的化合物,可举出(甲基)丙烯酸缩水甘油酯及(甲基)丙烯酸4-羟丁酯缩水甘油醚等。
作为上述环氧化合物的部分(甲基)丙烯酸化物,可通过使环氧化合物和(甲基)丙烯酸依据常规方法在催化剂的存在下反应而得到。作为可用于上述环氧化合物的部分(甲基)丙烯酸化物的环氧化合物,可举出:酚醛清漆型环氧化合物及双酚型环氧化合物等。作为上述酚醛清漆型环氧化合物,可举出:苯酚酚醛清漆型环氧化合物、甲酚酚醛清漆型环氧化合物、联苯酚醛清漆型环氧化合物、三苯酚酚醛清漆型环氧化合物、及二环戊二烯酚醛清漆型环氧化合物等。作为上述双酚型环氧化合物,可举出:双酚A型环氧化合物、双酚F型环氧化合物、2,2’-二烯丙基双酚A型环氧化合物、氢化双酚型环氧化合物、及聚氧丙烯双酚A型环氧化合物等。通过适宜变更环氧化合物和(甲基)丙烯酸的配合量,可得到期望的丙烯酸化率的环氧化合物。相对于环氧基1当量,羧酸的配合量优选为0.1当量以上,更优选为0.2当量以上,优选为0.7当量以下,更优选为0.5当量以下。
上述聚氨酯改性(甲基)丙烯酸环氧化合物例如可通过以下的方法而得到。使多元醇和2官能以上的异氰酸酯反应,并且使具有酸基的(甲基)丙烯酸类单体及缩水甘油与残留的异氰酸酯基反应。或者,可以不使用多元醇,使具有羟基的(甲基)丙烯酸类单体和缩水甘油与2官能以上的异氰酸酯反应。或者,即使使缩水甘油与具有异氰酸酯基的(甲基)丙烯酸酯单体反应,也可得到上述聚氨酯改性(甲基)丙烯酸环氧化合物。具体而言,例如,首先使三羟甲基丙烷1摩尔和异佛尔酮异氰酸酯3摩尔在锡类催化剂下反应。通过使得到的化合物中残留的具有异氰酸酯基和羟基的作为丙烯酸类单体的丙烯酸羟基乙酯、以及作为具有羟基的环氧化合物的缩水甘油进行反应,可得到上述聚氨酯改性(甲基)丙烯酸环氧化合物。
作为上述多元醇,没有特别限定,例如可举出:乙二醇、甘油、山梨糖醇、三羟甲基丙烷、及(聚)丙二醇等。
上述异氰酸酯只要为2官能以上即可,没有特别限定。作为上述异氰酸酯,例如,可举出:异佛尔酮二异氰酸酯、2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、六亚甲基二异氰酸酯、三甲基六亚甲基二异氰酸酯、二苯基甲烷-4,4’-二异氰酸酯(MDI)、氢化MDI、聚合型MDI、1,5-萘二异氰酸酯、降冰片烷二异氰酸酯、联甲苯胺二异氰酸酯、苯二甲二异氰酸酯(XDI)、氢化XDI、赖氨酸二异氰酸酯、三苯基甲烷三异氰酸酯、三(异氰酸酯苯基)硫代磷酸酯、四甲基二甲苯二异氰酸酯、及1,6,10-十一碳烷三异氰酸酯等。
上述具有(甲基)丙烯酰基和环状硫醚基的化合物可以通过例如将上述具有(甲基)丙烯酰基和环氧基的化合物的环氧基变换成环状硫醚基而得到。作为变换成上述环状硫醚基的方法,优选为如下方法:向含有硫化剂的第一溶液中连续或间歇地添加含有上述具有(甲基)丙烯酰基和环氧基的化合物的溶液后,进一步连续或间歇地添加含有硫化剂的第二溶液。通过该方法,可以将上述环氧基变换成环状硫醚基。
作为上述硫化剂,可举出:硫氰酸盐类、硫脲类、硫膦、二甲基硫代甲酰胺及N-甲基苯并噻唑-2-硫酮等。作为上述硫氰酸盐类,可举出:硫氰酸钠、硫氰酸钾及硫氰酸钠等。
从更进一步提高固化的粘接剂层的厚度精度的观点出发,上述光及热固化性化合物优选含有(甲基)丙烯酸4-羟丁酯缩水甘油醚,更优选含有丙烯酸4-羟丁酯缩水甘油醚。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述粘接剂100重量%中,上述光及热固化性化合物的含量优选为0.5重量%以上,更优选为1重量%以上,优选为80重量%以下,更优选为70重量%以下。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述粘接剂100重量%中,上述光固化性化合物和上述光及热固化性化合物的总计含量优选为10重量%以上,更优选为20重量%以上,优选为80重量%以下,更优选为70重量%以下。
(热固化性化合物)
作为上述热固化性化合物,可举出具有环状醚基的热固化性化合物及具有硫化乙烯基的热固化性化合物等。从更进一步高精度地形成固化后的粘接剂层的观点出发,上述热固化性化合物优选为具有环状醚基或硫化乙烯基的热固化性化合物,更优选为具有环氧基或硫化乙烯基的热固化性化合物,另外还优选为具有环状醚基的热固化性化合物,特别优选为具有环氧基的热固化性化合物(环氧化合物)。上述热固化性化合物可以是具有硫化乙烯基的热固化性化合物。从更进一步高精度地形成固化后的粘接剂层的观点出发,优选上述热固化性化合物为具有环氧基或硫化乙烯基的热固化性化合物,优选上述光及热固化性化合物为具有(甲基)丙烯酰基的光及热固化性化合物。上述热固化性化合物可以单独使用一种,也可以组合使用两种以上。
作为上述环氧化合物,没有特别限定,例如可举出:酚醛清漆型环氧化合物及双酚型环氧化合物等。作为上述酚醛清漆型环氧化合物,可举出:苯酚酚醛清漆型环氧化合物、甲酚酚醛清漆型环氧化合物、联苯酚醛清漆型环氧化合物、三酚酚醛清漆型环氧化合物、及二环戊二烯酚醛清漆型环氧化合物等。作为上述双酚型环氧化合物,可举出:双酚A型环氧化合物、双酚F型环氧化合物、2,2’-二烯丙基双酚A型环氧化合物、氢化双酚型环氧化合物、及聚氧丙烯双酚A型环氧化合物等。另外,作为上述环氧化合物,此外还可举出环式脂肪族环氧化合物、及缩水甘油基胺等。
上述具有硫化乙烯基的热固化性化合物通过例如将上述具有环氧基的环氧化合物的环氧基变换成硫化乙烯基而得到。作为上述变换成硫化乙烯基的方法,优选为如下方法:向含有硫化剂的第一溶液中连续或间歇地添加含有上述具有环氧基的环氧化合物的溶液,然后,进一步连续或间歇地添加含有硫化剂的第二溶液。通过该方法,可以将上述环氧基变换成硫化乙烯基。
作为上述硫化剂,可举出:硫氰酸盐类、硫脲类、硫膦、二甲基硫代甲酰胺及N-甲基苯并噻唑-2-硫酮等。作为上述硫氰酸盐类,可举出:硫氰酸钠、硫氰酸钾及硫氰酸钠等。
从更进一步高精度地形成粘接剂层,且更进一步不易在粘接剂层上产生空隙的观点出发,上述热固化性化合物优选具有芳香族骨架。
从更进一步高精度地形成固化后的粘接剂层的观点出发,上述粘接剂100重量%中,上述热固化性化合物的含量优选为10重量%以上,更优选为20重量%以上,优选为80重量%以下,更优选为70重量%以下。
(光聚合引发剂)
作为上述光聚合引发剂,可举出:光自由基聚合引发剂及光阳离子聚合引发剂等。上述光聚合引发剂优选为光自由基聚合引发剂。上述光聚合引发剂也可以单独使用一种,也可以组合使用两种以上。
上述光自由基聚合引发剂没有涂布限定。上述光自由基聚合引发剂是用于通过照射光而产生自由基从而引发自由基重合反应的化合物。作为上述光自由基聚合引发剂的具体例,例如可举出:苯偶姻、苯偶姻甲醚、苯偶姻乙醚、苯偶姻异丙基醚等苯偶姻化合物;2-羟基-2-甲基-1-苯基丙烷-1-酮等烷基苯酮化合物;苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、1,1-二氯苯乙酮等苯乙酮化合物;2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1-酮、2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁烷-1-酮、2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁酮-1、2-(二甲基氨基)-2-[(4-甲基苯基)甲基]-1-[4-(4-吗啉基)苯基]-1-丁酮、N,N-二甲基氨基苯乙酮等氨基苯乙酮化合物;2-甲基蒽醌、2-乙基蒽醌、2-叔丁基蒽醌等蒽醌化合物;2,4-二甲基噻吨酮、2,4-二乙基噻吨酮、2-氯噻吨酮、2,4-二异丙基噻吨酮等噻吨酮化合物;苯乙酮二甲基缩酮、苯偶酰二甲基缩酮等缩酮化合物;2,4,6-三甲基苯甲酰二苯基氧化膦、双(2,4,6-三甲基苯甲酰)-苯基氧化膦等酰基氧化膦化合物;1,2-辛二酮、1-[4-(苯基硫代)-2-(邻-苯甲酰基肟)]、乙酮、1-[9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基]-1-(邻乙酰肟)等肟酯化合物;双(环戊二烯基)-二-苯基-钛、双(环戊二烯基)-二氯钛、双(环戊二烯基)-双(2,3,4,5,6-五氟苯基)钛、双(环戊二烯基)-双(2,6-二氟-3-(吡咯-1-基)苯基)钛等茂钛化合物等。上述光自由基聚合引发剂可以单独使用一种,也可以组合使用两种以上。
光聚合引发助剂可以与上述光自由基聚合引发剂同时使用。作为该光聚合引发助剂,可举出:N,N-二甲基氨基苯甲酸乙酯、N,N-二甲基氨基苯甲酸异戊酯、戊基-4-二甲基氨基苯甲酸酯、三乙胺及三乙醇胺等。也可以使用这些以外的光聚合引发助剂。上述光聚合引发助剂可以单独使用一种,也可以组合使用两种以上。
另外,为了促进光反应,可以使用在可见光区域具有吸收的CGI-784等(CibaSpecialty Chemicals公司制造)的茂钛化合物等。
作为上述光阳离子聚合引发剂,没有特别限定,例如可举出:锍盐、碘鎓盐、茂金属化合物及苯偶姻对甲苯磺酸酯等。上述光阳离子聚合引发剂可以单独使用一种,也可以组合使用两种以上。
上述粘接剂100重量%中,上述光聚合引发剂的含量优选为0.1重量%以上,更优选为0.2重量%以上,优选为10重量%以下,更优选为5重量%以下。
(热固化剂)
作为上述热固化剂,可举出:有机酸、胺化合物、酰胺化合物、酰肼化合物、咪唑化合物、咪唑啉化合物、苯酚化合物、尿素化合物、聚硫醚化合物及酸酐等。作为上述热固化剂,可以使用胺-环氧加成化合物等改性多胺化合物。也可以使用这些以外的热固化剂。上述热固化剂可以单独使用一种,也可以组合使用两种以上。
上述胺化合物是指具有1个以上的伯~叔氨基的化合物。作为上述胺化合物,例如可举出:(1)脂肪族多胺、(2)脂环族多胺、(3)芳香族多胺、(4)酰肼、及(5)胍衍生物等。另外,可以使用环氧化合物加成多胺(环氧化合物和多胺的反应物)、迈克尔加成多胺(α、β不饱和酮和多胺的反应物)、曼尼希加成多胺(多胺和甲醛及苯酚的缩合物)、硫脲加成聚胺(硫脲和多胺的反应物)、酮封端多胺(酮化合物和多胺的反应物[酮亚胺])等加合物。
作为上述(1)脂肪族多胺,可举出:二亚乙基三胺、三亚乙基四胺、四亚乙基五胺、及二乙基氨基丙基胺等。
作为上述(2)脂环族多胺,可举出:烯二胺、异佛尔酮二胺、N-氨基乙基哌嗪、3,9-双(3-氨基丙基)-2,4,8,10-四氧杂螺(5,5)十一碳烷加和物、双(4-氨基-3-甲基环己基)甲烷、以及双(4-氨基环己基)甲烷等。
作为上述(3)芳香族多胺,可举出:间苯二胺、对苯二胺、邻二甲苯二胺、间二甲苯二胺、对二甲苯二胺、4,4-二氨基二苯基甲烷、4,4-二氨基二苯基丙烷、4,4-二氨基二苯基砜、4,4-二氨基二环己烷、双(4-氨基苯基)苯基甲烷、1,5-二氨基萘、1,1-双(4-氨基苯基)环己烷、2,2-双[(4-氨基苯氧基)苯基]丙烷、双[4-(4-氨基苯氧基)苯基]砜、1,3-双(4-氨基苯氧基)苯、4,4-亚甲基-双(2-氯苯胺)、及4,4-二氨基二苯基砜等。
作为上述(4)酰肼,可举出卡巴肼、己二酸二酰肼、癸二酸二酰肼、十二碳烷二酸二酰肼、以及间苯二甲酸二酰肼等。
作为上述(5)胍衍生物,可举出二氰胺、1-邻甲苯基二胍、α-2,5-二甲基胍、α,ω-二苯基缩二缩胍、α,α-双缩二胍基二苯基醚、对氯苯基二胍、α,α-六亚甲基双[ω-(对氯苯酚)]二胍、苯二胍草酸盐、乙酰基胍、及二乙基氰基乙酰基胍等。
作为上述酚化合物,可举出:多元酚化合物等。作为上述多元酚化合物,例如可举出:苯酚、甲酚、乙基苯酚、丁基苯酚、辛基苯酚、双酚A、四溴双酚A、双酚F、双酚S、4,4’-联苯苯酚、含有萘骨架的苯酚酚醛清漆树脂、含有亚二甲苯基骨架的苯酚酚醛清漆树脂、含有二环戊二烯骨架的苯酚酚醛清漆树脂、及含有芴骨架的苯酚酚醛清漆树脂等。
作为上述酸酐,例如可举出:邻苯二甲酸酐、四氢邻苯二甲酸酐、六氢邻苯二甲酸酐、甲基四氢邻苯二甲酸酐、甲基降冰片烯二酸酐、十二碳烷基琥珀酸酐、六氯降冰片烯二酸酐、均苯四甲酸酐、二苯甲酮四羧酸酐、甲基环己烯四羧酸酐、偏苯三酸酐、及聚壬二酸酐等。
上述粘接剂100重量%中,上述热固化剂的含量优选为1重量%以上,更优选为5重量%以上,优选为60重量%以下,更优选为50重量%以下。
(固化促进剂)
作为上述固化促进剂,可举出:叔胺、咪唑、季铵盐、季鏻盐、有机金属盐、磷化合物及尿素类化合物等。
上述粘接剂100重量%中,上述固化促进剂的含量优选为0.01重量%以上,更优选为0.1重量%以上,优选为10重量%以下,更优选为5重量%以下。
(溶剂)
上述粘接剂不包含或包含溶剂。上述粘接剂可以包含溶剂,也可以不包含溶剂。从更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙的观点出发,上述粘接剂中的溶剂的含量越少越好。
作为上述溶剂,可举出水及有机溶剂等。其中,从更进一步提高残留物的除去性的观点出发,优选为有机溶剂。作为上述有机溶剂,可举出:乙醇等醇类、丙酮、甲基乙基酮、环己酮等酮类、甲苯、二甲苯、四甲基苯等芳香族烃类、溶纤剂、甲基溶纤剂、丁基溶纤剂、卡必醇、甲基卡必醇、丁基卡必醇、丙二醇单甲醚、二丙二醇单甲醚、二丙二醇二乙醚、三丙二醇单甲基醚等二醇醚类、乙酸乙酯、乙酸丁酯、乳酸丁酯、乙酸溶纤剂、丁基溶纤剂乙酸酯、卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇单甲醚乙酸酯、二丙二醇单甲基醚乙酸酯、碳酸亚丙酯等酯类、辛烷、癸烷等脂肪族烃类、以及石油醚、石脑油等石油类溶剂等。
在上述粘接剂包含上述溶剂的情况下,上述粘接剂100重量%中,上述溶剂的含量优选为5重量%以下,更优选为1重量%以下,进一步优选为0.5重量%以下。
(填料)
上述粘接剂不包含或包含填料。上述粘接剂可以包含填料,也可以不包含填料。从更进一步提高粘接剂层的厚度精度,并且更进一步不易在粘接剂层上产生空隙的观点出发,上述粘接剂中的填料的含量越少越好。另外,上述粘接剂中的填料的含量越少,越可抑制喷墨装置引起的喷出不良的产生。
作为上述填料,可举出:二氧化硅、滑石、粘土、云母、水滑石、氧化铝、氧化镁、氢氧化铝、氮化铝及氮化硼等。
在上述粘接剂包含上述填料的情况下,上述粘接剂100重量%中,上述填料的含量优选为5重量%以下,更优选为1重量%以下,进一步优选为0.5重量%以下。
(其它成分)
上述粘接剂也可以包含其它成分。作为其它的成分,没有特别限定,可举出:偶联剂等粘接助剂、颜料、染料、流平剂、消泡剂、及阻聚剂等。
(电子部件的具体例)
以下,说明使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的其它具体例。
图6是示意性地表示使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的第一变形例的正面剖视图。
图6所示的半导体装置71是电子部件。半导体装置71具备:基板53A、粘接剂层72、第一半导体晶片73。基板53A在上表面具有第一连接端子53a。第一半导体晶片73在上表面具有连接端子73a。基板53A除不设置第二连接端子53b以外,与后述的基板53同样地形成。
在基板53A上,隔着粘接剂层72叠层有第一半导体晶片73。粘接剂层72通过使上述粘接剂进行光固化及热固化而形成。粘接剂层72是上述粘接剂的固化物。
第一半导体晶片73在上表面具有连接端子73a。配线74从连接端子73a引出。利用配线74,对连接端子73a和第一连接端子53a进行电连接。
图7是示意性地表示使用本发明一个实施方式的喷墨用光及热固化性粘接剂得到的电子部件的第二变形例的正面剖视图。
图7所示的半导体装置51是电子部件。半导体装置51具备叠层结构体52。叠层结构体52具有:基板53、粘接剂层54、在基板53上隔着粘接剂层54叠层的第二半导体晶片55。在基板53上配置有第二半导体晶片55。第二半导体晶片55间接地叠层在基板53上。俯视时,基板53比第二半导体晶片55大。基板53与第二半导体晶片55相比具有向侧方伸出的区域。
粘接剂层54通过例如使固化性组合物进行固化而形成。使用了固化前的固化性组合物的固化性组合物层可以具有粘合性。为了形成固化前的固化性组合物层,可以使用固化性组合物片材。
基板53在上表面具有第一连接端子53a。第二半导体晶片55在上表面具有连接端子55a。配线56从连接端子55a抽出。配线56的一端与设于第二半导体晶片55上的连接端子55a连接在一起。配线56的另一端与设于基板53上的第一连接端子53a连接。利用配线56,对连接端子55a和第一连接端子53a进行电连接。配线56的另一端可以与第一连接端子53a以外的其它连接端子连接。配线56优选为接合线。
在叠层结构体52的第二半导体晶片55上,隔着粘接剂层61叠层有第一半导体晶片62。粘接剂层61通过使上述粘接剂进行光固化及热固化而形成。粘接剂层61是上述粘接剂的固化物。
基板53在上表面具有第二连接端子53b。第一半导体晶片62在上表面具有连接端子62a。配线63从连接端子62a引出。配线63的一端与设于第一半导体晶片62上的连接端子62a连接。配线63的另一端与设于基板53上的第二连接端子53b连接在一起。利用配线63,对连接端子62a和第二连接端子53b进行电连接。配线63的另一端可以与第二连接端子53b以外的其它连接端子连接。配线63优选为接合线。
就半导体装置51而言,可以如下得到:从喷墨装置将具有光固化性及热固化性且为液态的粘接剂喷出至第二半导体晶片55上,形成粘接剂层61。对此,半导体装置71可以如下得到:从喷墨装置将具有光固化性及热固化性且为液态的粘接剂喷出至基板53A上,形成粘接剂层72。
以下,举出实施例及比较例,具体地说明本发明。本发明不仅限定于以下的实施例。
具有硫化乙烯基的化合物(A)的合成:
向具有搅拌机、冷却机及温度计的2L的反应机内添加乙醇250mL、纯水250mL和硫氰酸钾20g,使硫氰酸钾溶解,制备第一溶液。然后,将容器内的温度保持在20~25℃的范围内。接着,一边搅拌保持在20~25℃的容器内的第一溶液,一边以5mL/分钟的速度滴加双酚A型环氧树脂160g。滴加后,进一步搅拌30分钟,得到含环氧化合物的混合液。接着,准备使硫氰酸钾20g溶解于包含纯水100mL、乙醇100mL的溶液中而得到的第二溶液。向得到的含环氧化合物的混合液中以5mL/分钟的速度添加得到的第二溶液,然后,搅拌30分钟。搅拌后,进一步准备使硫氰酸钾20g溶解在包含纯水100mL和乙醇100mL的溶液中而得到的第二溶液,将该第二溶液以5mL/分钟的速度进一步添加至容器内,并搅拌30分钟。然后,将容器内的温度冷却至10℃,并搅拌2小时,使其反应。接着,向容器内添加饱和食盐水100mL,并搅拌10分钟。搅拌后,向容器内进一步添加甲苯300mL,并搅拌10分钟。然后,将容器内的溶液转移到分液漏斗中,静置2小时,使溶液分离。将分液漏斗内的下方的溶液排出,取出上清液。向取出的上清液中添加甲苯100mL进行搅拌,并静置2小时。然后,进一步添加甲苯100mL进行搅拌,并静置2小时。接着,向添加有甲苯的上清液中添加硫酸镁50g,搅拌5分钟。搅拌后,利用滤纸去除硫酸镁,将溶液分离。使用真空干燥机,将分离的溶液在80℃下减压干燥,由此,除去残存的溶剂。这样,得到具有将环氧基取代成硫化乙烯基的硫化乙烯基在25℃下为液态的化合物(A)。
具有硫化乙烯基的化合物(B)的合成:
具有硫化乙烯基的化合物(A)的合成中,除了将双酚A型环氧树脂变更成丙烯酸4-羟丁酯缩水甘油醚以外,进行相同的操作,得到具有将环氧基取代成硫化乙烯基的硫化乙烯基在25℃下为液态的化合物(B)。
(实施例1)
(粘接剂A的制备)
将作为光固化性化合物的三环癸烷二甲醇二丙烯酸酯(Daicel-Allnex株式会社制造的“IRR-214K”)2重量份、丙烯酸月桂酯(共荣社化学株式会社制造“L-A”)11重量份、作为光及热固化性化合物的丙烯酸4-羟丁酯缩水甘油醚(日本化成株式会社制造的“4HBAGE”)41重量份、作为热固化性化合物的双酚A型环氧树脂(新日铁住金化学株式会社制造的“YD-127”)20重量份、作为热固化剂的具有萜烯骨架的酸酐(三菱化学株式会社制造的“YH306”)20重量份、作为固化促进剂的DBU-辛酸盐(SAN-APRO株式会社制造的“UCAT SA-102”)1重量份、及作为光聚合引发剂的2-苄基-2-二甲基氨基-1-(4-吗啉代苯基)-丁酮-1(BASF株式会社制造的“IRGACURE369”)5重量份均匀地混合,得到粘接剂A。
(实施例2~16及比较例1~3)
(粘接剂B~P的制备)
除了以下述表2、3所示的配合量配合下述表1所示的成分以外,与上述粘接剂A同样地制备,制备粘接剂B~S。
(评价)
(粘接剂在25℃及10rpm下的粘度)
以JIS K2283为基准,使用E型粘度计(东机产业株式会社制造的“TVE22L”),测定25℃及10rpm下的粘接剂的粘度。根据下述基准评价粘度。
[粘度的判定基准]
A:粘度超过1600mPa·s
B:粘度超过1000mPa·s、且为1600mPa·s以下
C:粘度超过500mPa·s、且为1000mPa·s以下
D:粘度为160mPa·s以上、且为500mPa·s以下
E:粘度为5mPa·s以上、且低于160mPa·s
F:粘度低于5mPa·s
(弹性模量的评价)
利用旋转涂布机将粘接剂涂布在基材上,使其厚度为20μm。对曝光装置(超高压水银灯,Orc制作所株式会社制造,“JL-4300-3”)进行了调节,使其在25℃下,利用照度计(Ushio电机株式会社制造的“UIT-201”)测定的365nm下的照度为100mW/cm2,并且使用所述曝光装置对该涂布物照射光10秒钟(累计光量1000mJ/cm2)。对于得到的B阶段化样品,使用TA instruments公司制造的粘弹性测定装置ARES,在25℃、测定板:直径8mm的平行板及频率为1Hz的条件下进行弹性模量的测定。
(半导体装置中的粘接剂层的空隙的确认)
准备配线的高度差有5μm的BGA基板(厚度0.3mm,以5行×16列设置90个市售的涂布有阻焊剂的、纵10mm×横10mm的半导体芯片放置的部位部位)。根据上述的本发明一个实施方式的电子部件的制造方法,经由图2(a)~图2(e)所示的各工序,形成粘接剂层。使上述粘接剂一边在70℃下循环,一边重复进行涂布的上述涂布工序和上述第一光照射工序(以365nm为主波长的UV-LED灯,100mW/cm2,0.1秒),形成厚度30μm的粘接剂层,并通过第二光照射工序(超高压水银灯,100mW/cm2,10秒)进行光固化。然后,在粘接剂层上,使用芯片焊接装置,以110℃、0.2MPa的条件将经过选择的裸硅片叠层在半导体芯片(纵10mm×横10mm×厚度80μm)上,从而得到叠层体。叠层裸硅片后,使用光学显微镜(Keyence株式会社制造的“Digital Microscope VH-Z100”)确认到粘接剂层的溢出低于100μm。通过将得到的叠层体放入160℃的烤炉内加热3小时,进行热固化,由此,得到90个半导体装置(叠层结构体)。
使用超声波探查成像装置(日立建机Finetec株式会社制造的“mi-scopehyperII”),观察得到的半导体装置中的粘接剂层的空隙,并根据下述基准进行评价。
[空隙的判定基准]
○○:几乎没有观察到空隙
○:观察到极少的空隙(使用上没有问题)
×:观察到空隙(使用上存在问题)
(半导体装置中的半导体芯片的移动的确认)
使用光学显微镜(Keyence株式会社制造的“Digital Microscope VH-Z100”),对空隙的确认的评价中得到的半导体装置中的半导体芯片的移动进行观察,并根据下述基准进行评价。此外,在半导体芯片进行移动的情况下,确认到粘接剂层的厚度精度差。
[半导体芯片的移动的判定基准]
○:几乎未观察到半导体芯片的移动(移动距离低于20μm)
×:观察到半导体芯片的移动(移动距离为20μm以上)
(半导体装置的吸湿回流+冷热循环可靠性试验)
将空隙的确认的评价中得到的半导体装置(90个)在85℃及湿度85RH%下放置168小时进行吸湿。然后,在焊锡回流炉(预热150℃×100秒钟,回流[最高温度260℃])中通过5个循环。将进行了该吸湿回流试验的半导体装置,使用液槽式热冲击试验机(ESPEC株式会社制造“TSB-51”)实施如下冷热循环试验:在-55℃下保持5分钟后,升温到150℃,在以150℃保持5分钟后降温至-50℃,将以上过程作为1个循环。在250个循环、500个循环及1000个循环后取出半导体装置,使用超声波探伤成像装置(日立建机Finetec株式会社制造“mi-scope hyper II”),观察半导体装置的粘接剂层的剥离,并根据下述基准进行评价。
[吸湿回流+冷热循环可靠性试验的判定基准]
○○:没有剥离
○:微少地剥离(使用上没有问题)
×:大幅地剥离(使用上存在问题)
将使用的配合成分的详情示于下述表1中,且将组合及结果示于下述表2、3中。配合成分的配合单位为重量份。
在半导体装置中的粘接剂层的空隙的确认、及半导体装置的吸湿回流+冷热循环可靠性试验的评价中,在B阶段化时,对粘接剂层整体照射光并使累计光量成为1000mJ/cm2时同样地进行评价。其结果,得到与表1、2所示的结果相同的结果。
Claims (19)
1.一种喷墨用光及热固化性粘接剂,其含有光固化性化合物、热固化性化合物、光聚合引发剂、和热固化剂,
以365nm下的照度为100mW/cm2的方式对粘接剂照射累计光量1000mJ/cm2的光而得到B阶段化粘接剂时,所述B阶段化粘接剂在25℃下的弹性模量为5.0×102Pa以上且8.0×104Pa以下。
2.如权利要求1所述的喷墨用光及热固化性粘接剂,其中,
所述光固化性化合物含有:
具有1个光固化性反应基团的光固化性化合物、和
具有2个以上光固化性反应基团的光固化性化合物。
3.如权利要求2所述的喷墨用光及热固化性粘接剂,其中,
所述具有1个光固化性反应基团的光固化性化合物的所述光固化性反应基团为(甲基)丙烯酰基,
所述具有2个光固化性反应基团的光固化性化合物的所述光固化性反应基团为(甲基)丙烯酰基。
4.如权利要求2或3所述的喷墨用光及热固化性粘接剂,其不含或含有光及热固化性化合物,
在粘接剂不含所述光及热固化性化合物的情况下,在所述光固化性化合物总量100重量%中,所述具有2个以上光固化性反应基团的光固化性化合物的含量为0.1重量%以上且30重量%以下,
在粘接剂含有所述光及热固化性化合物的情况下,在所述光固化性化合物的总量与所述光及热固化性化合物的总计100重量%中,所述具有2个以上光固化性反应基团的光固化性化合物的含量为0.1重量%以上且30重量%以下。
5.如权利要求2~4中任一项所述的喷墨用光及热固化性粘接剂,其中,
所述具有1个光固化性反应基团的光固化性化合物包含(甲基)丙烯酸2-乙基己酯。
6.如权利要求1~5中任一项所述的喷墨用光及热固化性粘接剂,其中,
所述热固化性化合物包含具有环氧基或硫化乙烯基的热固化性化合物。
7.如权利要求1~6中任一项所述的喷墨用光及热固化性粘接剂,其含有光及热固化性化合物。
8.如权利要求7所述的喷墨用光及热固化性粘接剂,其中,
所述热固化性化合物包含具有环氧基或硫化乙烯基的热固化性化合物,
所述光及热固化性化合物包含具有(甲基)丙烯酰基的光及热固化性化合物。
9.如权利要求7或8所述的喷墨用光及热固化性粘接剂,其中,
所述光及热固化性化合物包含(甲基)丙烯酸4-羟丁酯缩水甘油醚。
10.如权利要求1~9中任一项所述的喷墨用光及热固化性粘接剂,其以JIS K2283为基准测定的在25℃及10rpm下的粘度为5mPa·s以上且1600mPa·s以下。
11.如权利要求1~10中任一项所述的喷墨用光及热固化性粘接剂,其不含或含有溶剂,
在粘接剂含有所述溶剂的情况下,所述溶剂的含量为1重量%以下。
12.如权利要求1~11中任一项所述的喷墨用光及热固化性粘接剂,其不含或含有填料,
在粘接剂含有所述填料的情况下,所述填料的含量为1重量%以下。
13.一种半导体装置的制造方法,其包括:
使用喷墨装置在半导体元件搭载用支承部件或半导体元件的表面上涂布权利要求1~12中任一项所述的喷墨用光及热固化性粘接剂,从而形成粘接剂层的涂布工序;
通过照射光使所述粘接剂层发生固化,形成B阶段化粘接剂层的工序;
在所述B阶段化粘接剂层的与所述支承部件或所述半导体元件侧相反的表面上叠层半导体元件的工序;
在叠层了所述半导体元件之后,使所述B阶段化粘接剂层进行热固化的工序。
14.一种半导体装置的制造方法,其包括:
使用喷墨装置在半导体晶片的表面上喷出权利要求1~12中任一项所述的喷墨用光及热固化性粘接剂,形成粘接剂层的涂布工序;
通过照射光使所述粘接剂层发生固化,形成B阶段化粘接剂层的工序;
在所述B阶段化粘接剂层的与所述半导体晶片侧相反的表面上叠层保护玻璃,得到叠层体的工序;
使所述叠层体中的所述B阶段化粘接剂层进行热固化的工序;
在热固化后切断所述叠层体的工序。
15.如权利要求13或14所述的半导体装置的制造方法,其中,
将所述B阶段化粘接剂层在25℃下的弹性模量调整为5.0×102Pa以上且8.0×104Pa以下。
16.如权利要求13~15中任一项所述的半导体装置的制造方法,其中,
所述喷墨装置具有:
油墨罐,其贮存所述喷墨用光及热固化性粘接剂;
喷出部,其与所述油墨罐连接且喷出所述喷墨用光及热固化性粘接剂;
循环流路部,其一端与所述喷出部连接在一起,其另一端与所述油墨罐连接在一起,且在其内部流通所述喷墨用光及热固化性粘接剂,
在所述涂布工序中,在所述喷墨装置内,使所述喷墨用光及热固化性粘接剂从所述油墨罐移动至所述喷出部,然后,使未从所述喷出部喷出的所述喷墨用光及热固化性粘接剂在所述循环流路部内流动并向所述油墨罐移动,由此,一边使所述喷墨用光及热固化性粘接剂循环一边进行涂布。
17.如权利要求16所述的半导体装置的制造方法,其中,
循环的所述喷墨用光及热固化性粘接剂的温度为40℃以上且100℃以下。
18.一种电子部件,其具备:
第一电子部件主体、
第二电子部件主体、和
将所述第一电子部件主体和所述第二电子部件主体连接在一起的粘接剂层,
所述粘接剂层为权利要求1~12中任一项所述的喷墨用光及热固化性粘接剂的固化物。
19.如权利要求18所述的电子部件,其中,
所述第一电子部件主体为半导体元件搭载用支承部件或半导体元件,
所述第二电子部件主体为半导体元件。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014232996 | 2014-11-17 | ||
JP2014-232996 | 2014-11-17 | ||
JP2015144911 | 2015-07-22 | ||
JP2015-144911 | 2015-07-22 | ||
PCT/JP2015/076678 WO2016080069A1 (ja) | 2014-11-17 | 2015-09-18 | インクジェット用光及び熱硬化性接着剤、半導体装置の製造方法及び電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106103633A true CN106103633A (zh) | 2016-11-09 |
CN106103633B CN106103633B (zh) | 2023-11-17 |
Family
ID=56013629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580013146.2A Active CN106103633B (zh) | 2014-11-17 | 2015-09-18 | 喷墨用光及热固化性粘接剂、半导体装置的制造方法及电子部件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170158922A1 (zh) |
EP (1) | EP3222692B1 (zh) |
JP (3) | JP6002857B1 (zh) |
KR (2) | KR102325678B1 (zh) |
CN (1) | CN106103633B (zh) |
TW (1) | TWI647294B (zh) |
WO (1) | WO2016080069A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107109139A (zh) * | 2015-01-22 | 2017-08-29 | 积水化学工业株式会社 | 喷墨用粘接剂、半导体装置的制造方法及电子零件 |
CN110494510A (zh) * | 2017-06-06 | 2019-11-22 | 太阳油墨制造株式会社 | 喷墨用固化性组合物组、固化物、其制造方法、印刷电路板和扇出型的晶片级封装 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6391543B2 (ja) * | 2015-09-28 | 2018-09-19 | 積水化学工業株式会社 | 電子部品の製造方法 |
JP6995580B2 (ja) | 2017-11-17 | 2022-01-14 | 日本航空電子工業株式会社 | 光部品の生産方法及びタッチセンサを具備する製品の生産方法 |
JPWO2022203033A1 (zh) * | 2021-03-26 | 2022-09-29 | ||
WO2023176778A1 (ja) * | 2022-03-16 | 2023-09-21 | 積水化学工業株式会社 | 硬化性樹脂組成物及び半導体部品の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080104832A1 (en) * | 2006-11-07 | 2008-05-08 | Seiko Epson Corporation | Method for manufacturing electronic substrate |
CN102598234A (zh) * | 2009-11-13 | 2012-07-18 | 日立化成工业株式会社 | 粘接剂组合物、使用该粘接剂组合物的半导体装置及其制造方法 |
CN102687256A (zh) * | 2009-11-13 | 2012-09-19 | 日立化成工业株式会社 | 膜状粘接剂的制造方法、粘接片和半导体装置及其制造方法 |
CN103119109A (zh) * | 2010-09-22 | 2013-05-22 | 积水化学工业株式会社 | 喷墨用固化性组合物及电子部件的制造方法 |
WO2013154314A1 (ko) * | 2012-04-10 | 2013-10-17 | (주)엘지하우시스 | 반경화 감압 점착필름 |
CN104956469A (zh) * | 2013-11-19 | 2015-09-30 | 积水化学工业株式会社 | 电子部件的制造方法及电子部件 |
CN104981299A (zh) * | 2013-11-06 | 2015-10-14 | 积水化学工业株式会社 | 固化物膜的制造方法、电子部件的制造方法及电子部件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03192178A (ja) | 1989-12-21 | 1991-08-22 | Nitto Denko Corp | ダイボンディング用接着シート |
WO2007004569A1 (ja) * | 2005-07-05 | 2007-01-11 | Hitachi Chemical Company, Ltd. | 感光性接着剤組成物、並びにこれを用いて得られる接着フィルム、接着シート、接着剤層付半導体ウェハ、半導体装置及び電子部品 |
JP4788425B2 (ja) * | 2006-03-23 | 2011-10-05 | 住友ベークライト株式会社 | 半導体用接着剤、これを用いた半導体装置および半導体装置の製造方法 |
JP2009147231A (ja) | 2007-12-17 | 2009-07-02 | Hitachi Chem Co Ltd | 実装方法、半導体チップ、及び半導体ウエハ |
JP5009229B2 (ja) | 2008-05-22 | 2012-08-22 | 富士フイルム株式会社 | インクジェット記録装置 |
JP2010264689A (ja) * | 2009-05-15 | 2010-11-25 | Riso Kagaku Corp | インクジェット記録装置及びインクジェット記録方法 |
CN102598233A (zh) * | 2009-11-13 | 2012-07-18 | 日立化成工业株式会社 | 液状半导体用粘接剂组合物、半导体装置以及半导体装置的制造方法 |
JP2012039379A (ja) | 2010-08-06 | 2012-02-23 | Canon Inc | 画像処理装置 |
JP2014012770A (ja) | 2012-07-04 | 2014-01-23 | Nitto Denko Corp | 透明粘接着剤層付透明飛散防止部材 |
JP6250265B2 (ja) * | 2012-03-16 | 2017-12-20 | リンテック株式会社 | 接着剤組成物、接着シートおよび半導体装置の製造方法 |
KR101850590B1 (ko) | 2012-09-27 | 2018-04-19 | 세키스이가가쿠 고교가부시키가이샤 | 잉크젯용 경화성 조성물 및 전자 부품의 제조 방법 |
JP2014075215A (ja) | 2012-10-03 | 2014-04-24 | Sekisui Chem Co Ltd | 絶縁材料、多層フィルム、積層体、接続構造体、積層体の製造方法及び接続構造体の製造方法 |
-
2015
- 2015-09-18 KR KR1020197021888A patent/KR102325678B1/ko active IP Right Grant
- 2015-09-18 US US15/322,606 patent/US20170158922A1/en not_active Abandoned
- 2015-09-18 WO PCT/JP2015/076678 patent/WO2016080069A1/ja active Application Filing
- 2015-09-18 KR KR1020167021347A patent/KR102177435B1/ko active IP Right Grant
- 2015-09-18 CN CN201580013146.2A patent/CN106103633B/zh active Active
- 2015-09-18 JP JP2015548085A patent/JP6002857B1/ja active Active
- 2015-09-18 EP EP15860929.7A patent/EP3222692B1/en active Active
- 2015-11-09 TW TW104136906A patent/TWI647294B/zh active
-
2016
- 2016-08-19 JP JP2016161145A patent/JP2017025325A/ja active Pending
-
2019
- 2019-07-01 JP JP2019123029A patent/JP7007334B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080104832A1 (en) * | 2006-11-07 | 2008-05-08 | Seiko Epson Corporation | Method for manufacturing electronic substrate |
CN102598234A (zh) * | 2009-11-13 | 2012-07-18 | 日立化成工业株式会社 | 粘接剂组合物、使用该粘接剂组合物的半导体装置及其制造方法 |
CN102687256A (zh) * | 2009-11-13 | 2012-09-19 | 日立化成工业株式会社 | 膜状粘接剂的制造方法、粘接片和半导体装置及其制造方法 |
CN103119109A (zh) * | 2010-09-22 | 2013-05-22 | 积水化学工业株式会社 | 喷墨用固化性组合物及电子部件的制造方法 |
WO2013154314A1 (ko) * | 2012-04-10 | 2013-10-17 | (주)엘지하우시스 | 반경화 감압 점착필름 |
CN104981299A (zh) * | 2013-11-06 | 2015-10-14 | 积水化学工业株式会社 | 固化物膜的制造方法、电子部件的制造方法及电子部件 |
CN104956469A (zh) * | 2013-11-19 | 2015-09-30 | 积水化学工业株式会社 | 电子部件的制造方法及电子部件 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107109139A (zh) * | 2015-01-22 | 2017-08-29 | 积水化学工业株式会社 | 喷墨用粘接剂、半导体装置的制造方法及电子零件 |
US10202519B2 (en) | 2015-01-22 | 2019-02-12 | Sekisui Chemical Co., Ltd. | Inkjet adhesive, manufacturing method for semiconductor device, and electronic component |
US10961411B2 (en) | 2015-01-22 | 2021-03-30 | Sekisui Chemical Co., Ltd. | Inkjet adhesive, manufacturing method for semiconductor device, and electronic component |
CN110494510A (zh) * | 2017-06-06 | 2019-11-22 | 太阳油墨制造株式会社 | 喷墨用固化性组合物组、固化物、其制造方法、印刷电路板和扇出型的晶片级封装 |
Also Published As
Publication number | Publication date |
---|---|
WO2016080069A1 (ja) | 2016-05-26 |
JP6002857B1 (ja) | 2016-10-05 |
KR20190090881A (ko) | 2019-08-02 |
JP7007334B2 (ja) | 2022-01-24 |
KR102177435B1 (ko) | 2020-11-11 |
KR20170081131A (ko) | 2017-07-11 |
KR102325678B1 (ko) | 2021-11-12 |
CN106103633B (zh) | 2023-11-17 |
JP2017025325A (ja) | 2017-02-02 |
JPWO2016080069A1 (ja) | 2017-04-27 |
EP3222692A1 (en) | 2017-09-27 |
TWI647294B (zh) | 2019-01-11 |
JP2019183165A (ja) | 2019-10-24 |
EP3222692B1 (en) | 2023-07-12 |
US20170158922A1 (en) | 2017-06-08 |
TW201623497A (zh) | 2016-07-01 |
EP3222692A4 (en) | 2018-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107109183B (zh) | 喷墨用粘接剂、半导体装置的制造方法及电子零件 | |
CN106103633A (zh) | 喷墨用光及热固化性粘接剂、半导体装置的制造方法及电子部件 | |
CN104956469B (zh) | 电子部件的制造方法及电子部件 | |
JP5756841B2 (ja) | 硬化物膜の製造方法及び電子部品の製造方法 | |
JP6411184B2 (ja) | インクジェット用光及び熱硬化性接着剤、半導体装置の製造方法及び電子部品の製造方法 | |
KR20160011707A (ko) | 경화물막의 제조 방법, 전자 부품의 제조 방법 및 전자 부품 | |
JP6325905B2 (ja) | インクジェット用光及び熱硬化性接着剤、電子部品の製造方法及び電子部品 | |
JP6355422B2 (ja) | インクジェット用光及び熱硬化性接着剤、電子部品の製造方法及び電子部品 | |
JP6325914B2 (ja) | インクジェット用光及び熱硬化性接着剤、電子部品の製造方法及び電子部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |