CN106098821A - The processing unit (plant) of thin-film solar cells and the processing method of thin-film solar cells - Google Patents
The processing unit (plant) of thin-film solar cells and the processing method of thin-film solar cells Download PDFInfo
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- CN106098821A CN106098821A CN201610282341.1A CN201610282341A CN106098821A CN 106098821 A CN106098821 A CN 106098821A CN 201610282341 A CN201610282341 A CN 201610282341A CN 106098821 A CN106098821 A CN 106098821A
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- 239000010409 thin film Substances 0.000 title claims abstract description 175
- 238000003672 processing method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000007246 mechanism Effects 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 230000009471 action Effects 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 17
- 230000000994 depressogenic effect Effects 0.000 claims description 5
- 238000012423 maintenance Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 abstract description 5
- 238000004904 shortening Methods 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 description 19
- 230000008859 change Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000006748 scratching Methods 0.000 description 9
- 230000002393 scratching effect Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention provides a kind of processing unit (plant) and processing method of thin-film solar cells contributing to shortening the thin-film solar cells forming line required time.The processing unit (plant) of the thin-film solar cells of the present invention includes: microscope carrier, forms the substrate (10) of intermediate layer (23) for mounting;Cutlery, forms line (30) in intermediate layer (23);Head, is pressed into intermediate layer (23) by cutlery;Sweep mechanism, by making head be scanned cutlery relative to microscope carrier relative movement;And control device, control head and the action of sweep mechanism.Controlling device is to form the processing starting point (30X) of line (30) by pressing cutlery, and maintain the state of pressing cutlery while cutlery is scanned afterwards forming processing starting point (30X), thus, intermediate layer (23) formed line (30), and make formation processing starting point (30X) time pressing cutlery power by pressure be better than formed line (30) time by pressure.
Description
Technical field
The present invention relates to the processing unit (plant) of a kind of thin-film solar cells and the processing method of thin-film solar cells.
Background technology
The manufacturing step of conventional thin-film solar cells comprises formation for the quasiconductor that will be formed on substrate or metal
Thin film is divided into the delineation processing of the line in multiple region.As one of delineation processing method, it is known to mechanical scratching method.
Mechanical scratching method is while cutlery being pressed into quasiconductor or metallic film while being scanned cutlery, thus in thin film shape
Become line.
Processing method as the patent documentation 1 of an example of mechanical scratching method is to be formed to expose thin film before the processing of line
The part of lower floor i.e. peristome, makes cutlery drop to position corresponding with the processing starting point of line in peristome, and to institute
State cutlery to be scanned, thus form line at thin film.
Processing method as the patent documentation 2 of another example of mechanical scratching method is first to be pressed into thin by the edge part of point of a knife
Film, forms otch, then, makes point of a knife leave from thin film, then, changes the posture of point of a knife, the chamfered section of point of a knife is pressed
It is depressed into thin film, and under this state, cutlery is scanned, thus form line at thin film.
[background technology document]
[patent documentation]
No. 5486057 publications of [patent documentation 1] Japanese Patent No.
[patent documentation 2] Japanese Patent Laid-Open 2013-141702 publication
Summary of the invention
[inventing problem to be solved]
About the manufacture of thin-film solar cells, in order to improve productivity ratio, and expect that the step needed for making delineation processing simplifies,
Thus shorten process time.On the other hand, according to the processing method of patent documentation 1, it is necessary to carried out before forming line
Form the step of peristome, therefore, worry that procedure of processing complicates and worries that the time needed for forming line is elongated.Separately
Outward, according to the processing method of patent documentation 2, thin film is formed between the step of otch and the step forming line necessary
Carry out cutlery lifting and cutlery posture changing, therefore, worry that constituting of device complicates and needed for worry line processing
Time is elongated.
Additionally, the width of the point of a knife generally speaking front end for the thin film of thin-film solar cells being carried out the cutlery that delineation is processed
Degree is for about tens of μm, and therefore, in the case of the speed making cutlery decline towards workpiece, worrying ought
Point of a knife damage when cutlery is contacted with workpiece.Therefore, in order to the time needed for making delineation processing shortens, and it is difficult to adopt
The method accelerated by the speed that cutlery will be made to decline.
It is an object of the invention to provide a kind of thin-film solar cells contributing to shortening the time needed for formation line
Processing unit (plant) and the processing method of thin-film solar cells.
[solving the technological means of problem]
(1) include according to a mode of the processing unit (plant) of the thin-film solar cells of the present invention: microscope carrier, formed for mounting
The substrate of thin film;Cutlery, forms line at described thin film;Head, is pressed into described thin film by described cutlery;Sweep mechanism,
By making described head relative to described microscope carrier relative movement, described cutlery be scanned;And control device, control described
Head and the action of described sweep mechanism;Described control device is by described cutlery being pressed into described thin film and described thin
Film forms the processing starting point of described line, and after forming described processing starting point, maintains and pressed by described cutlery
Extremely the state of described thin film is while being scanned described cutlery, thus, forms described line at described thin film, and makes shape
The power that described cutlery is pressed into when becoming described processing starting point described thin film is better than when forming described line by pressure
Described by pressure.
According to this processing unit (plant), when processing starting point is formed by pressure more than line add man-hour by pressure, therefore,
The thin film of processing starting point thin film or lamination midway is easily stripped.Therefore, continue cutlery is swept for forming line
Retouch, thus, the thin film of thin film or lamination midway is positively removed, thus is stably formed line.It is additionally, since
Maintain after forming processing starting point the state that cutlery is pressed while forming line, so, and add work step rule
The situation forming peristome before rapid and the situation implementing cutlery lifting during forming line are compared, the content of step
And the action of cutlery is simplified.Therefore, the time needed for forming line is shortened.It addition, in thin-film solar cells
In the case of possessing the thin film of lamination structure, it is formed in thin film or the lamination that the thin film of substrate refers to complete lamination
The thin film on way.
(2) include according to a mode of the processing unit (plant) of the thin-film solar cells of the present invention: microscope carrier, formed for mounting
The substrate of thin film;Head, is included in described thin film and forms the cutlery of line, described cutlery is pressed into described thin film;Scanning
Mechanism, by making described head be scanned described cutlery relative to described microscope carrier relative movement;And control device, control
Make described head and the action of described sweep mechanism;Described control device is the described cutlery being pressed into described thin film by scanning
And the 1st line of the part as described line is formed at described thin film, and after forming described 1st line,
Maintain and described cutlery is pressed into the state of described thin film while described cutlery is scanned, thus, in described thin film shape
Become as described line a part the 2nd line, and described 1st line formed time at least some of, make institute
State cutlery to be pressed into described in when the power of described thin film is i.e. formed more than described 2nd line as pressure by pressure.
According to this processing unit (plant), when the 1st line is formed by pressure more than the 2nd line add man-hour by pressure, therefore,
Easily it is stripped at the 1st line thin film.So, continue cutlery is scanned to form the 2nd line, thus,
The thin film of thin film or lamination midway is positively removed, thus is stably formed the 2nd line.It is additionally, since and is forming the
Maintains after 1 line the state that cutlery is pressed while forming the 2nd and ruling, so, with the procedure of processing rule it
The situation of front formation peristome and implement the situation of cutlery lifting during forming line and compare, the content of step and sword
The action of tool is simplified.Therefore, the time needed for forming line is shortened.
(3) according to an example of the processing unit (plant) of described thin-film solar cells, described control device is to make from described 1st stroke
Described when the processing starting point of line part to the process finishing point of described 1st line is formed by pressure more than described
2nd line formed time described by pressure.
According to this processing unit (plant), in the processing starting point from the 1st line to process finishing point, by thin film or lamination
The thin film on way is positively removed, and therewith, in the processing starting point of the 2nd line, also the thin film by thin film or lamination midway is true
Remove on the spot, thus be stably formed the 2nd line.
(4) according to an example of the processing unit (plant) of described thin-film solar cells, described control device makes described 1st stroke of formation
The scanning speed of described cutlery during line is slower than the scanning speed of described cutlery when forming described 2nd line.
According to this processing unit (plant), the part at the initial stage in the procedure of processing of line, the scanning speed of cutlery is set as slower
Speed, therefore, utilize cutlery positively to be removed by thin film.Therefore, it is stably formed line.
(5) according to an example of the processing unit (plant) of described thin-film solar cells, with cuing open that the length direction of described cutlery intersects
The point of a knife of the described cutlery on face generally circular in shape.
According to this processing unit (plant), compared with the situation that the section of point of a knife comprises angle, in the case of corner wear, point of a knife is certainly
The degree of original shape change is less, and therefore, in the case of the same cutlery of life-time service, the completion quality of line is difficult to
Produce deviation.
(6) mode according to the processing method of the thin-film solar cells of the present invention is by cutlery is being pressed into formation
When the thin film of substrate, described cutlery is scanned and forms line at described thin film, and include: the 1st step,
The processing starting point of described line is formed at described thin film by described cutlery is pressed into described thin film;Second step,
After forming described processing starting point, maintain the state that described cutlery is pressed into described thin film to described cutlery
It is scanned, thus forms described line at described thin film;And third step, by institute when making formation described processing starting point
State cutlery be pressed into the power of described thin film i.e. as pressure more than described in when forming described line by pressure.
According to this processing method, when processing starting point is formed by pressure more than line add man-hour by pressure, therefore,
Processing starting point, the thin film of thin film or lamination midway is easily stripped.Therefore, continue cutlery is entered to form line
Row scanning, thus, positively removes the thin film of thin film or lamination midway, thus is stably formed line.And, by
In maintain after forming processing starting point state that cutlery is pressed while forming line, so, and ruling
The situation forming peristome before procedure of processing and the situation implementing cutlery lifting during forming line are compared, step
Content and the action of cutlery be simplified.Therefore, the time needed for forming line is shortened.
(7) mode according to the processing method of the thin-film solar cells of the present invention is by cutlery is being pressed into formation
When the thin film of substrate, described cutlery is scanned and forms line at described thin film, and include: the 1st step,
The part as described line is formed at described thin film by the described cutlery being pressed into described thin film is scanned
The 1st line;Second step, after forming described 1st line, maintains and described cutlery is pressed into described thin film
State while described cutlery is scanned, thus form the 2nd stroke of a part as described line at described thin film
Line;And third step, described cutlery is pressed into described thin film by making at least partially when described 1st line is formed
Power i.e. press pressure more than formed described 2nd line time described by pressure.
According to this processing method, when the 1st line is formed by pressure more than the 2nd line add man-hour by pressure, therefore,
Easily it is stripped at the 1st line thin film.Therefore, continue cutlery is scanned to form the 2nd line, thus,
The thin film of thin film or lamination midway is positively removed, thus is stably formed the 2nd line.It is additionally, since and is forming the
Maintains after 1 line the state that cutlery is pressed while forming the 2nd and ruling, so, and in the procedure of processing rule
The situation before forming peristome and the situation implementing cutlery lifting during forming line are compared, the content of step and
The action of cutlery is simplified.Therefore, the time needed for forming line is shortened.
[effect of invention]
The processing unit (plant) of described thin-film solar cells and the processing method of thin-film solar cells contribute to shortening being formed draws
Time needed for line.
Accompanying drawing explanation
Fig. 1 is the axonometric chart of the processing unit (plant) of the thin-film solar cells of embodiment 1.
Fig. 2 is the axonometric chart of the cutlery of Fig. 1.
Fig. 3 is the block diagram of the processing unit (plant) of Fig. 1.
Fig. 4 be processing unit (plant) carried out machine after the top view of thin-film solar cells.
Fig. 5 is the X-X sectional view of Fig. 4.
Fig. 6 is the sectional view of the thin-film solar cells manufacturing midway after the 1st electrode forming step completes.
Fig. 7 is the sectional view of the thin-film solar cells manufacturing midway after intermediate layer forming step completes.
Fig. 8 is the top view of the thin-film solar cells in the 1st step.
Fig. 9 is the top view of the thin-film solar cells in second step.
Figure 10 is the top view of the thin-film solar cells after the machining of embodiment 2.
Figure 11 is the top view of the thin-film solar cells in the 1st step.
Figure 12 is the top view of the thin-film solar cells in second step.
Figure 13 is the top view of the thin-film solar cells of change case.
Detailed description of the invention
(embodiment 1)
Fig. 1 is the axonometric chart of the processing unit (plant) 100 possessing the function manufacturing thin-film solar cells 1.Processing unit (plant) 100
Including: body 110, house various element;Microscope carrier 130, manufactures the thin-film solar cells 1 of midway for mounting;
150, described thin-film solar cells 1 is processed;Head guiding element 170, makes 150 relative to microscope carrier 130 phase
To movement;Video camera 140, the situation of shooting microscope carrier 130;And control device 120, control the action of 150 grade.
Microscope carrier 130 is to be supported by body 110.The upper surface of microscope carrier 130 i.e. mounting surface 131 is sustainable thin film solar
The plane of battery 1.Head guiding element 170 include: the 1st guiding element 171, can in the depth direction i.e. Y-direction of body 110,
Move relative to body 110;And the 2nd guiding element 172, the 1st guiding element 171 support, and along the width of body 110
The i.e. X-direction in degree direction extends.1st guiding element the 171 and the 2nd guiding element 172 is to move integratedly relative to body 110.
150 include arranging in X direction and can be relative to multiple cutleries 160 of microscope carrier 130 lifting, and can be along the
Supported by the 2nd guiding element 172 under the state that 2 guiding elements 172 move.Cutlery 160 is pressed into and is positioned in by 150 scalable
The power of the thin-film solar cells 1 manufacturing midway of microscope carrier 130 i.e. presses pressure, with adding according to thin-film solar cells 1
Cutlery 160 is pressed into thin-film solar cells 1 by pressure by work step the specific of setting such as suddenly.Sword included by 150
One example of the radical of tool 160 is 2.As in figure 2 it is shown, the point of a knife 161 of cutlery 160 has circular cone shape.With cutlery
The point of a knife 161 on section that the length direction of 160 is orthogonal generally circular in shape.
Fig. 3 is the block diagram of the functional device representing processing unit (plant) 100.Processing unit (plant) 100 also includes: the 1st actuator 201,
The 1st guiding element 171 is made to move along Y-direction relative to microscope carrier 130;2nd actuator 202, makes 150 relative to the 2nd
Guiding element 172 moves in X direction;And the 3rd actuator 203, make cutlery 160 along the direction close to microscope carrier 130 and from
The direction that microscope carrier 130 leaves is moved.1st actuator 201 is to be loaded in body 110.2nd actuator 202 is dress
It is loaded in a guiding element 170.3rd actuator 203 be loaded in 150 in.It addition, the 1st actuator 201 and head are led
Part 170 constitutes the sweep mechanism of scanning cutlery 160.
Control the control portion 121 of the various controls that device 120 includes performing comprising the control for forming line 30 and deposit
Storage control needed for the memorizer 122 of information, and with the 1st actuator the 201, the 2nd actuator the 202, the 3rd actuator
203 and video camera 140 electrically connect.One example in control portion 121 is microcomputer or FPGA (Field of
Programmable Gate Array, field programmable gate array).
Control portion 121 control 150, head guiding element 170 and the action of video camera 140.Control because of control portion 121
And the 1st actuator 201 drives, thus, 150 move relative to microscope carrier 130, thus the cutlery 160 of correct 150
It is scanned along Y-direction.
Fig. 4 be processing unit (plant) 100 carried out machine after the top view of thin-film solar cells 1.Fig. 5 is figure
The X-X sectional view of 4.As it is shown in figure 5, thin-film solar cells 1 includes substrate 10 and is formed on this substrate 10
Thin film 20.Thin film 20 possesses lamination structure.Constitute the 1st electrode that multiple layers of thin film 20 are formed on substrate 10
21 the 2nd electrodes 22 electrically connected with the 1st electrode 21 and being formed between the 1st electrode the 21 and the 2nd electrode 22
Intermediate layer 23.The layer being made up of the 1st electrode the 21 and the 1st electrode 21 and intermediate layer 23 is respectively lamination midway
Thin film.Dihedral at the upper surface of the 2nd electrode 22 becomes to have for detecting thin-film solar cells 1 on microscope carrier 130
The alignment mark 40 of position.
Intermediate layer 23 possesses lamination structure.Constitute the light suction that multiple layers in intermediate layer 23 are formed on the 1st electrode 21
Receive layer 23A, the cushion 23B being formed on light absorbing zone 23A and the insulating barrier 23C being formed on cushion 23B.
It is formed with 3 kinds of line 30 at thin film 20.1st kind of line 30 is the line 30A split by the 1st electrode 21.
2nd kind of line 30 is the line 30B split in intermediate layer 23.3rd kind of line 30 is by the 2nd electrode 22 and centre
The line 30C of layer 23 segmentation.Line 30A is to utilize the processing method different from mechanical scratching method, such as laser grooving and scribing
Method and formed.Line 30B and line 30C is to utilize the mechanical scratching method of use processing unit (plant) 100 to be formed.
Line 30A is filled up by a part of light absorbing zone 23A.Line 30B is filled out by a part for the 2nd electrode 22
Full.Line 30C is not filled up by other objects.A part and the 1st for the 2nd electrode 22 by line 30B is filled up
Electrode 21 contacts, and is electrically connected with the 2nd electrode 22 by the 1st electrode 21.
Line 30B and line 30C is the longer line 30 parallel with the limit of substrate 10, and is from processing starting point 30X
Throughout the groove extended to process finishing point 30Z.Processing starting point 30X be in order to formed line 30B, 30C time at first
The point of a knife 161 of pressing cutlery 160, thus the point assisting the processing of the line 30 that cutlery 160 carried out and being formed, and then,
Also it is condition switching point 30Y.
Condition switching point 30Y be switching with by processing unit (plant) 100 formed rule 30 relevant processing conditionss line 30 on
Point.Processing conditions comprise the such as scanning speed of cutlery 160, cutlery 160 by pressure and the position of cutlery 160.
In embodiment 1, switch as one of processing conditions at the condition switching point 30Y as processing starting point 30X
Cutlery 160 by pressure.
It addition, in Fig. 4 and Fig. 8~Figure 13, processing starting point 30X and condition switching point 30Y schematically show
For point, but processing starting point 30X of reality and condition switching point 30Y have real with other parts of line 30B, 30C
Width identical in matter.It is difficult to by visually distinguishing processing starting point 30X and condition switching point 30Y and line 30B, 30C
The difference of other parts.
The manufacturing step relevant to thin film 20 is greatly classified into 3 steps, the i.e. the 1st electrode forming step, intermediate layer shape
Become step and the 2nd electrode forming step.Fig. 6 is the completed thin film sun manufacturing midway of the 1st electrode forming step
The section of energy battery 1.Fig. 7 is the section of the completed thin-film solar cells 1 manufacturing midway of intermediate layer forming step.
Fig. 5 be processing unit (plant) 100 carried out machine after the section of thin-film solar cells 1.
In the 1st electrode forming step, first, the 1st electrode 21 is formed over the substrate 10.The one of the material of substrate 10
Example is soda-lime glass.One example of the material of the 1st electrode 21 is molybdenum.Then, formed the 1st electrode at the 1st electrode 21
Line 30 that is multiple line 30A of 21 segmentations.
In the forming step of intermediate layer, first, the 1st electrode 21 forms light absorbing zone 23A.Then, inhale at light
Receive and on layer 23A, form cushion 23B.Then, cushion 23B forms insulating barrier 23C.Light absorbing zone 23A
An example be compound semiconductor film.One example of cushion 23B is ZnS thin film.One example of insulating barrier 23C is ZnO
Thin film.
Then, processing unit (plant) 100 is utilized to form multiple line 30B in intermediate layer 23.Line 30B be formed at relative to
Line 30A is towards the position of the side skew specific range of X-direction.
In the 2nd electrode forming step, first, intermediate layer 23 forms the 2nd electrode 22.The material of the 2nd electrode 22
One example of matter is ZnO:Al thin film.Then, formed will constitute the of thin film 20 at the 2nd electrode 22 and intermediate layer 23
2 electrodes 22 and line 30 that is multiple line 30C of intermediate layer 23 segmentation.
Fig. 8~Figure 10 is the figure relevant to the concrete procedure of processing of the line 30 utilizing mechanical scratching method.Herein, use
The procedure of processing of line 30B represents line 30.Line 30C be through according to line 30B procedure of processing add work step
Suddenly formed.
In the 1st stage of the 1st step shown in Fig. 8, to illusory parallel with the mounting surface 131 of microscope carrier 130 i.e.
Cutlery 160 on scanning plane is adjusted relative to the position of substrate 10.In one example, the 1st rank in the 1st step
Section comprises step in detail below.Control device 120 position based on the alignment mark 40 detected by video camera 140,
Calculate the coordinate of processing starting point 30X on scanning plane, and with the coordinate of point of a knife 161 and the seat processing starting point 30X
Mark consistent mode to each actuator 201,202 output instruction signal.By each actuator 201,202 based on described finger
Making signal be driven, the coordinate of point of a knife 161 is the most consistent with the coordinate of processing starting point 30X.
In the 2nd stage of the 1st step, point of a knife 161 is pressed into intermediate layer 23, forms processing in intermediate layer 23 and open
Initial point 30X.In one example, the 2nd stage of the 1st step comprises step in detail below.First, control device 120 with
Point of a knife 161 utilize the 1st be pressed into the mode in intermediate layer 23 to the 3rd actuator 203 output instruction signal by pressure.
Being driven based on described command signal by the 3rd actuator 203, point of a knife 161 declines and is pressed into by pressure with the 1st
Intermediate layer 23, is absorbed in the front end of point of a knife 161 to intermediate layer 23.It addition, the 1st is 2.0N by an example of pressure.
In the second step shown in Fig. 9, form the 2nd line 32 in intermediate layer 23.In one example, second step bag
Containing step in detail below.Control device 120 to utilize the 2nd to be pressed into intermediate layer 23 by pressure cutlery 160 and described
Cutlery 160 in the way of the 2nd scanning speed moves along the 1st direction D1 to each actuator 201,203 output instruction signal.
Being driven based on described command signal by each actuator 201,203, cutlery 160 is pressed into centre at point of a knife 161
Move along the 1st direction D1 under the state of layer 23, utilize cutlery 160 to be removed in intermediate layer 23, thus form the 2nd stroke
Line 32.It addition, the 2nd is the 1.3N weak by pressure compared with the 1st by an example of pressure.One example of the 2nd scanning speed is 1000
The mm/ second.
Then, control device 120 position based on cutlery 160 and arrive process finishing point 30Z, with sweeping of cutlery 160
Retouch the mode temporarily ceased to the 1st actuator 201 output instruction signal.By the 1st actuator 201 based on described instruction
Signal is driven, and cutlery 160 stops at process finishing point 30Z, thus is formed and have from processing starting point 30X to adding
The line 30 of the length till work end point 30Z.It addition, the length of the 2nd line 32 is that the size according to substrate 10 sets
Fixed, it is generally comprised within the range of about 0.2m to about 1m.
According to processing unit (plant) 100, owing to being installed with many cutleries 160 150, so, by cutlery 160 is pressed
It is depressed into intermediate layer 23 and once and in intermediate layer 23 concurrently forms multiple processing starting point 30X.It addition, by along the 1st side
To D1, cutlery 160 is scanned 1 time, and concurrently form multiple line 30 in intermediate layer 23.
Controlling device 120 is by scanning cutlery 160 till process finishing point 30Z from processing starting point 30X
1 time and after intermediate layer 23 forms multiple line 30B, again perform the 1st step the 1st stage, with preboarding
Become the coordinate of processing starting point 30X of next line 30B in intermediate layer 23 and the side of the position consistency of point of a knife 161
Formula is to each actuator 201,202 output instruction signal.In the 1st stage after the 2nd time, with cutlery 160 along with
1st actuator 201 is exported by the mode of the distance that the 1st direction contrary for direction D1 that is the 2nd direction D2 moves regulation
Command signal, simultaneously defeated to the 2nd actuator 202 in the way of the distance that cutlery 160 specifies towards a side shifting of X-direction
Go out command signal.
Then, control device 120 perform the 2nd stage of the 1st step and second step as described above and in centre
Layer 23 forms next one line 30B.Then, control the device 120 mode as described and repeatedly perform the 1st step
And second step, till forming the predetermined all line 30B being formed at intermediate layer 23 in intermediate layer 23.
Processing unit (plant) 100 according to embodiment 1, such as, obtain effect shown below.
(1) the 1st when processing unit (plant) 100 is to make formation processing starting point 30X by pressure more than the when forming line 30
2 press pressure.According to this composition, in processing starting point 30X, cutlery 160 is positively absorbed in thin film 20 or lamination
The thin film on way, therefore, continues to be scanned cutlery 160, thus, by thin film 20 or lamination for forming line 30
The thin film of midway is positively removed, thus is stably formed line 30.And, after forming processing starting point 30X,
Maintain the state that cutlery 160 is pressed while forming line 30.Therefore, with line 30 procedure of processing before
The situation forming peristome and the situation implementing cutlery 160 lifting during forming line 30 are compared, step interior
Hold and the action of cutlery 160 is simplified.Therefore, the time needed for forming line 30 is shortened.
(2) cross-sectional shape of point of a knife 161 is circular.According to this composition, compared with the situation that the section of point of a knife 161 comprises angle,
Point of a knife 161 is less, therefore, at the same cutlery of life-time service 160 from the degree of original shape change in case of wearing
In the case of, the quality of line 30 is not likely to produce deviation.
(embodiment 2)
The processing unit (plant) 100 of embodiment 2 possesses the composition that the processing unit (plant) 100 with embodiment 1 is substantially the same.
Embodiment 2 is to be set in the aspect of the position different from processing starting point 30X at condition switching point 30Y to be different from reality
The processing method executing mode 1.
Figure 10 be the processing unit (plant) 100 of embodiment 2 carried out machine after the bowing of thin-film solar cells 1
View.Line 30B and line 30C is throughout the groove extended to process finishing point 30Z from processing starting point 30X, and
2 kinds of regions of the 1st line the 31 and the 2nd line 32 it are divided into from the point of view of in terms of its procedure of processing.Line 30B, 30C
It it is the 1 article of groove being made up of the 1st line the 31 and the 2nd line 32 essentially continuously formed.
1st line 31 be in order to assist utilize cutlery 160 to be carried out the 2nd line 32 processing and formed, and be with
The shorter line that the limit of substrate 10 is parallel, and extend throughout to condition switching point 30Y from processing starting point 30X
Straight line.2nd line 32 is the longer line parallel with the limit of substrate 10, and be from condition switching point 30Y throughout to
The straight line that process finishing point 30Z extends.In embodiment 2, condition switching point 30Y is the processing of the 1st line 31
End point, and described condition switching point 30Y by the two of processing conditions the switching by pressure and scanning speed of cutlery 160.
Fig. 8, Figure 11 and Figure 12 are relevant to the concrete procedure of processing of the line 30 utilizing mechanical scratching method to be carried out
Figure.Herein, the procedure of processing using line 30B represents line 30.Line 30C is through adding according to line 30B
Procedure of processing that work step is rapid and formed.
1st stage of the 1st step shown in Fig. 8 is the step identical with embodiment 1.
In the 2nd stage of the 1st step shown in Figure 11, point of a knife 161 is pressed into intermediate layer 23, in intermediate layer 23
Form the 1st line 31.In one example, the 2nd stage of the 1st step comprises step in detail below.First, device is controlled
3rd actuator 203 output order is believed in the way of utilizing the 1st to be pressed into intermediate layer 23 by pressure at point of a knife 161 by 120
Number.Being driven based on described command signal by the 3rd actuator 203, point of a knife 161 declines and presses by pressure with the 1st
It is depressed into intermediate layer 23, thus the front end of point of a knife 161 is absorbed in intermediate layer 23.1st by an example of pressure be ratio formed the 2nd
Rule 32 time cutlery 160 by pressure the 2nd by the strong 2.0N of pressure.
Then, device 120 is controlled defeated to the 1st actuator 201 in the way of utilizing the 1st scanning speed scanning cutlery 160
Go out command signal.It is driven based on described command signal by the 1st actuator 201, in point of a knife 161 is pressed into
Under the state of interbed 23, cutlery 160 is scanned.Therefore, utilize point of a knife 161 to be peeled off in intermediate layer 23, thus
Intermediate layer 23 forms the 1st line 31.It addition, an example of the 1st scanning speed is the 50mm/ second.
Then, device 120 position based on cutlery 160 reaching condition switching point 30Y is controlled, with sweeping of cutlery 160
Retouch the mode temporarily ceased to the 1st actuator 201 output instruction signal.By the 1st actuator 201 based on described instruction
Signal is driven, cutlery 160 condition switching point 30Y stop, thus formed have from processing starting point 30X to
1st line 31 of the length till condition switching point 30Y.The length of the 1st line 31 preferably utilizes cutlery 160
Required minimal length is peeled off in intermediate layer 23 by scanning.One example of minimal length is 1mm.At Figure 11
In shown example, the length of the 1st line 31 is longer than minimal length.One example of the length of the 1st line 31 is
3mm。
In the second step shown in Figure 12, form the 2nd line 32 in intermediate layer 23.In one example, second step bag
Containing step in detail below.Control device 120 so that cutlery 160 to utilize the 2nd be pressed into intermediate layer 23 by pressure, and with the
2 scanning speeds edges are scanned towards direction that is the 1st direction D1 of process finishing point 30Z from condition switching point 30Y
Mode is to the 1st actuator 201 output instruction signal.It is driven based on described command signal by the 1st actuator 201,
Cutlery 160 is scanned to process finishing point 30Z when point of a knife 161 is pressed into intermediate layer 23.With this
Mode, as processing conditions cutlery 160 by pressure and scanning speed because of cutlery 160 reaching condition switching point 30Y
And be switched.Additionally, it is possible to do not make the scanning of cutlery 160 stop and performing the 1st step and second step.
By intermediate layer 23 is removed to process finishing point 30Z by cutlery 160 from condition switching point 30Y scanning,
Thus form the 2nd line 32.It addition, formed the 2nd line 32 time cutlery 160 press pressure by pressure the 2nd
One example is 1.3N.One example of scanning speed the 2nd scanning speed of the cutlery 160 when forming the 2nd line 32 is ratio the
The 1000mm/ second that 1 scanning speed is fast.
Then, control device 120 position based on cutlery 160 and arrive process finishing point 30Z, with sweeping of cutlery 160
Retouch the mode temporarily ceased to the 1st actuator 201 output instruction signal.By the 1st actuator 201 based on described instruction
Signal is driven, and cutlery 160 stops at process finishing point 30Z, thus is formed and have from processing starting point 30X to adding
The line 30 of the length till work end point 30Z.
The processing unit (plant) 100 of the thin-film solar cells according to embodiment 2, not only obtains and utilizes the thin of embodiment 1
(1) and (2) effect of processing unit (plant) 100 gained of film solar cell, also obtains effect shown below.
(3) processing unit (plant) 100 is to make the process finishing from processing starting point 30X of the 1st line 31 to the 1st line 31
Pressure is pressed more than the 2nd by pressure in when part till point i.e. condition switching point 30Y is formed the 1st.According to this composition,
From processing starting point 30X to condition switching point 30Y, the thin film of thin film 20 or lamination midway is positively removed,
Therewith, at the processing starting point i.e. condition switching point 30Y of the 2nd line 32, also by thin film 20 or the thin film of lamination midway
Positively remove, thus be stably formed the 2nd line 32.
(4) processing unit (plant) 100 is to make the 1st scanning speed be slower than the 2nd scanning speed.According to this composition, in line 30
The part at the initial stage in procedure of processing, the scanning speed of cutlery 160 is set as slower speed, therefore, utilizes cutlery 160
The thin film of thin film 20 or lamination midway is positively removed.Therefore, line 30 it is stably formed.
(change case)
The explanation relevant to described each embodiment be can use according to the present invention thin-film solar cells processing unit (plant),
And the example of the mode of the processing method of thin-film solar cells, and it is not intended to be limited its mode.The foundation present invention's is thin
The processing unit (plant) of film solar cell and the processing method of thin-film solar cells, in addition to can using embodiment, also may be used
Use the change case of described each embodiment the most shown below and by least 2 the most conflicting change case combinations
The mode of gained.
In embodiment 2, the 1st when forming the 1st line 31 can arbitrarily be changed by pressure.In one example, also
The in time processing the part formation to condition switching point 30Y of starting point 30X the 1st can be made to successively decrease continuously by pressure
Pressing pressure to the 2nd.
Formation direction and the shape of the 1st line 31 can arbitrarily change.In one example, as shown in figure 13, with along with the
The mode that the direction of 2 line 32 intersections extends forms the 1st line 31.In another example, shape in the way of comprising intersection point
Become the 1st line 31 (omitting diagram).
The processing method of the line 30A split by the 1st electrode 21 is not limited to laser scribing method, variable more makes
By the mechanical scratching method of processing unit (plant) 100.
The sweep mechanism of described each embodiment includes the 1st actuator 201 and head guiding element 170, by making 150 phase
Move for being fixed on the microscope carrier 130 of body 110 and cutlery 160 is scanned, but the composition of sweep mechanism does not limit
Can arbitrarily change due to this.Microscope carrier 130 that the sweep mechanism of change case includes such as can moving relative to body 110,
And make the actuator that microscope carrier 130 moves relative to body 110.150 are integrally fixed at body 110.This sweep mechanism leads to
Cross and make microscope carrier 130 move relative to 150 and cutlery 160 is scanned.The another change case relevant to sweep mechanism
Including the 1st actuator the 201, the 2nd actuator 202, head guiding element 170, the microscope carrier 130 that can move relative to body 110,
And make the actuator that microscope carrier 130 moves relative to body 110.This sweep mechanism can make a guiding element 170 relative to microscope carrier 130
Move and microscope carrier 130 can be made to move relative to head guiding element 170.
[explanation of symbol]
1 thin-film solar cells
10 substrates
20 thin film
30 line
30X processes starting point
30Y condition switching point
31 the 1st line
32 the 2nd line
100 processing unit (plant)s
120 control device
130 microscope carriers
150
160 cutleries
161 points of a knife
170 cutleries
171 points of a knife
Claims (9)
1. a processing unit (plant) for thin-film solar cells, including:
Microscope carrier, forms the substrate of thin film for mounting;
Cutlery, forms line at described thin film;
Head, is pressed into described thin film by described cutlery;
Sweep mechanism, by making described head be scanned described cutlery relative to described microscope carrier relative movement;And
Control device, control described head and the action of described sweep mechanism;
Described control device is to form described line by described cutlery is pressed into described thin film at described thin film
Processing starting point, and formed after described processing starting point, described cutlery is pressed into described thin film by maintenance
State while described cutlery is scanned, thus, form described line at described thin film, and make described in formation
During processing starting point, described cutlery is pressed into the institute during power line described more than formation by pressure of described thin film
State by pressure.
The processing unit (plant) of thin-film solar cells the most according to claim 1, wherein the length direction with described cutlery is handed over
Point of a knife generally circular in shape of the described cutlery on the section of fork.
3. a processing unit (plant) for thin-film solar cells, including:
Microscope carrier, forms the substrate of thin film for mounting;
Head, is included in described thin film and forms the cutlery of line, described cutlery is pressed into described thin film;
Sweep mechanism, by making described head be scanned described cutlery relative to described microscope carrier relative movement;And
Control device, control described head and the action of described sweep mechanism;
Described control device is to be pressed into the described cutlery of described thin film by scanning and form conduct at described thin film
1st line of a part for described line, and after forming described 1st line, maintain and described cutlery is pressed
It is depressed into the state of described thin film while described cutlery is scanned, thus, is formed as described stroke at described thin film
A part for line the 2nd line, and described 1st line formed time at least some of, make by described cutlery by
It is depressed into described in when the power of described thin film is i.e. formed more than described 2nd line as pressure by pressure.
The processing unit (plant) of thin-film solar cells the most according to claim 3, wherein said control device makes from described
1 line processing starting point to described 1st rule process finishing point part formation time described by pressure
Pressure is pressed described in when being formed more than described 2nd line.
5., according to the processing unit (plant) of the thin-film solar cells described in claim 3 or 4, wherein said control device makes formation
The scanning speed of described cutlery during described 1st line is slower than the scanning of described cutlery when forming described 2nd line
Speed.
6. according to the processing unit (plant) of the thin-film solar cells described in claim 3 or 4, wherein with the length side of described cutlery
Point of a knife generally circular in shape of the described cutlery on the section intersected.
The processing unit (plant) of thin-film solar cells the most according to claim 5, wherein the length direction with described cutlery is handed over
Point of a knife generally circular in shape of the described cutlery on the section of fork.
8. a processing method for thin-film solar cells, by when being pressed into, by cutlery, the thin film being formed at substrate
Described cutlery is scanned and forms line at described thin film, and include:
1st step, forms the processing of described line by described cutlery is pressed into described thin film at described thin film
Starting point;
Second step, after forming described processing starting point, maintains and described cutlery is pressed into described thin film
State, while being scanned described cutlery, thus forms described line at described thin film;And
Third step, makes, during formation described processing starting point, described cutlery is pressed into the power of described thin film by pressure
More than formed described line time described by pressure.
9. a processing method for thin-film solar cells, by when being pressed into, by cutlery, the thin film being formed at substrate
Described cutlery is scanned and forms line at described thin film, and include:
1st step, forms conduct by being scanned the described cutlery being pressed into described thin film at described thin film
1st line of a part for described line;
Second step, after forming described 1st line, maintains the shape that described cutlery is pressed into described thin film
State, while being scanned described cutlery, thus forms the 2nd stroke of the part as described line at described thin film
Line;And
Third step, described cutlery is pressed into described thin film by making at least partially when described 1st line is formed
Power i.e. press pressure more than formed described 2nd line time described by pressure.
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JP2015093457A JP6547397B2 (en) | 2015-04-30 | 2015-04-30 | Thin film solar cell processing apparatus and thin film solar cell processing method |
JP2015-093457 | 2015-04-30 |
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CN106876518B (en) * | 2017-01-10 | 2019-09-20 | 西安中易建科技有限公司 | Thin-film solar cells scoring device and method |
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CN106098821B (en) | 2019-11-08 |
TW201642488A (en) | 2016-12-01 |
JP2016213258A (en) | 2016-12-15 |
JP6547397B2 (en) | 2019-07-24 |
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