CN106098753B - The junction termination structures of lateral high voltage power device - Google Patents
The junction termination structures of lateral high voltage power device Download PDFInfo
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- CN106098753B CN106098753B CN201610725572.5A CN201610725572A CN106098753B CN 106098753 B CN106098753 B CN 106098753B CN 201610725572 A CN201610725572 A CN 201610725572A CN 106098753 B CN106098753 B CN 106098753B
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- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 230000005684 electric field Effects 0.000 description 12
- 238000002347 injection Methods 0.000 description 7
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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Abstract
The present invention provides a kind of junction termination structures of lateral high voltage power device, including straight line junction termination structures and curvature junction termination structures；Curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide, the area Pwell, p type island region, source electrode P+Contact zone；Part between the inner and outer boundary of p type island region is circumferentially successively divided into multiple disjunct subregions 61、62….6N；Drain electrode N in curvature junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, gate oxide, the area Pwell respectively with the drain electrode N in straight line junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, gate oxide, the area Pwell are connected and form ring structure, the present invention carries out impurity compensation to N-type drift region concentration and then injecting to the p type island region in curvature terminal structure using multiwindow, to reduce the concentration of N-type drift region, so that N-type drift region is completely depleted by the P type substrate of low concentration, device is avoided to puncture in advance, thus the breakdown voltage optimized.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of knot terminal knot of lateral high voltage power device
Structure.
Background technique
The development of high-voltage power integrated circuit be unable to do without the lateral high voltage power semiconductor device that can be integrated.Lateral high pressure function
Rate semiconductor devices is usually closing structure, including the structures such as round, racetrack and interdigitated.For the racetrack structure of closure
And interdigitated configuration, it will appear small curvature terminal in racetrack portion and tip portion, electric field line is easy to send out at small radius of curvature
It is raw to concentrate, avalanche breakdown occurs in advance at small radius of curvature so as to cause device, this is for lateral high voltage power device domain
Structure proposes new challenge.
The Chinese patent of Publication No. CN102244092A discloses a kind of junction termination structures of lateral high voltage power device,
Fig. 1 show the domain structure of device, and device terminal structure includes drain electrode N+Contact zone, N-type drift region, P type substrate, grid are more
Crystal silicon, gate oxide, the area P-well, source electrode N+, source electrode P+.Device architecture is divided into two parts, including straight line junction termination structures and song
Rate junction termination structures.In straight line junction termination structures, the area P-well is connected with N-type drift region, when drain electrode applies high voltage, P-
The PN junction metallurgy junction that the area well is constituted with N-type drift region starts to exhaust, and the depletion region of lightly doped n type drift region will mainly be held
Load pressure resistance, the PN junction metallurgy junction that peak electric field appears in the area P-well and N-type drift region is constituted.To solve highly doped P-
The power line height for the PN junction curvature metallurgy junction that the area well and lightly doped n type drift region are constituted is concentrated, and device is caused to shift to an earlier date
Occur avalanche breakdown the problem of, the patent use curvature junction termination structures as shown in Figure 1, the highly doped area P-well with gently mix
Miscellaneous P type substrate is connected, and P type substrate is lightly doped and is connected with lightly doped n type drift region, and the highly doped area P-well and lightly doped n type are floated
The distance for moving area is LP.When device drain adds high pressure, device source fingertips curvature is lightly doped P type substrate and N is lightly doped
Type drift region is connected, and instead of the PN junction metallurgy junction that the highly doped area P-well and lightly doped n type drift region are constituted, is lightly doped
P type substrate is that depletion region increases additional charge, has not only been effectively reduced due to the high electric field peak value at the highly doped area P-well, but also with
N-type drift region introduces new peak electric field.Since P type substrate and N-type drift region are all lightly doped, so in same bias voltage
Under the conditions of, peak electric field reduces at metallurgical junction.It is served as a contrast again due to the highly doped area P-well of device finger tip curvature with p-type is lightly doped
The contact at bottom increases the radius at p-type curvature terminal, alleviates the concentrations of electric field line, avoids device in source fingertips song
The breakdown in advance of rate part improves the breakdown voltage of device finger tip curvature.Meanwhile the junction termination structures that the patent is proposed
It is also applied in longitudinal super-junction structure device.Fig. 1 is the structural schematic diagram of device X/Y plane, since curvature knot terminal part drifts about
The doping concentration in area is higher with respect to P type substrate part, and P type substrate is unable to fully exhaust N-type drift region, introduces in intersection higher
Electric field, the PN junction for causing P type substrate and N-type drift region to constitute punctures in advance, therefore the pressure resistance of device is not to optimize, reliably
Property also reduces.
Summary of the invention
It is to be solved by this invention, it can not be by low concentration aiming at N-type drift region in traditional devices curvature terminal structure
P type substrate it is completely depleted caused by charge unbalance and junction electric field curvature effect defect, propose a kind of laterally high
Press the junction termination structures of power device.
To achieve the above object, the present invention adopts the following technical scheme:
A kind of junction termination structures of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, grid oxygen
Change floor, the area Pwell, the p type island region inside N-type drift region, source electrode P+Contact zone, N-type drift region and p type island region include the square of bottom
The half-circle area in region and top, the part between the inner and outer boundary of p type island region are circumferentially successively divided into multiple disjunct subregions
61、62….6N；N-type drift region is filled between adjacent subarea domain, each subregion falls in N-type drift region close to P there are two vertex
On the inner boundary of shape substrate, two vertex are located on the outer boundary of N-type drift region, and one end that each subregion is located at outer boundary is small
In the one end for being located at inner boundary, the length that subregion is located at one end of outer boundary is respectively d1,1、d1,2….d1,N, subregion is located at
The length of one end of inner boundary is respectively d0,1、d0,2。。。。。。d0,N-1、d0,N, two neighboring subregion is located at N-type drift region inner side edge
The distance between one end in boundary is respectively L0,1、L0,2……L0,N、L0,N+1, two neighboring subregion is located on the outside of N-type drift region
The distance between borderline one end is respectively L1,1、L1,2……L1,N、L1,N+1；It is gate oxide, gate oxide above p type island region
Surface be grid polycrystalline silicon；Drain electrode N in curvature junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, grid
Oxide layer, the area Pwell respectively with the drain electrode N in straight line junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, grid oxygen
Change floor, the area Pwell is connected and forms ring structure,；Wherein, the drain electrode N in curvature junction termination structures+The drift of contact zone surrounding n-type
Area is moved, there is annular grid polysilicon, annular gate oxide and the area Pwell, L in N-type drift regiondFor the drift region length of device.
It is preferred that straight line junction termination structures are single RESURF, double RESURF, triple
RESURF structure is one such.
It is preferred that the straight line junction termination structures, comprising: drain electrode N+Contact zone, N-type drift region 2b, P type substrate,
Grid polycrystalline silicon, gate oxide, the area P-well, source electrode N+Contact zone, source electrode P+Contact zone；The area P-well and N-type drift region 2bPosition
In the upper layer of P type substrate, wherein the area P-well is located at centre, and both sides are N-type drift regions 2b, and the area P-well and N-type drift region 2b
It is connected；N-type drift region 2bIn far from the area P-well two sides be drain electrode N+The surface of contact zone, the area P-well has and metallization
The connected source electrode N of source electrode+Contact zone and source electrode P+Contact zone, wherein source electrode P+Contact zone is located at centre, source electrode N+Contact zone is located at
Source electrode P+Contact zone two sides；Source electrode N+Contact zone and N-type drift region 2bBetween the area P-well surface above be gate oxide,
It is grid polycrystalline silicon, L above the surface of gate oxidedFor the drift region length of device, the area P-well and N-type drift region 2bNo
It is connected and the spacing of the two is LP。
It is preferred that subregion 61、62….6NWith the area P-well share same mask plate or separately plus mask plate into
Row p type impurity injects to be formed.
It is preferred that the N-type drift region lower boundary in curvature junction termination structures extends to and straight line knot end to centre
N-type drift region 2 in end structurebCoboundary connection.
It is preferred that each subregion 61、62….6NBetween the inner boundary and outer boundary of N-type drift region
It is divided into M subsegment, respectively 61,1, 61,2... ... 6N,M。
It is preferred that the dosage of the ion implanting of each subregion is identical, and in each subregion, M subsegment
61,1, 61,2... ... 61MThe dosage of ion implanting successively successively decrease.
It is preferred that subregion is located at the length d of one end of outer boundary1,1、d1,2….d1,NIdentical, subregion is located at
The length d of one end of inner boundary0,1、d0,2。。。。。。d0,N-1、d0,NIdentical, two neighboring subregion is located at N-type drift region inboard boundary
On the distance between one end L0,1、L0,2……L0,N、L0,N+1Identical, two neighboring subregion is located at N-type drift region outer boundaries
On the distance between one end L1,1、L1,2……L1,N、L1,N+1It is identical.
It is preferred that subregion 6 in curvature junction termination structures1Inner boundary be overlapped with N-type drift region inner boundary, or
Person's subregion 61Inner boundary in the outside of N-type drift region inner boundary.
It is preferred that single or more on the surface of N-type drift region or in vivo formation after junction termination structures knot
A P-doped zone 6a,1、6a,2、6a,3….6a,N。
The total technical solution of the present invention, in straight line terminal structure and curvature terminal structure connected component, curvature terminal structure
Middle N-type drift region lower boundary extends to and N-type drift region 2 in direct terminal structure to centrebCoboundary connection, the curvature are whole
Part in end structure between the inner and outer boundary of p type island region is circumferentially successively divided into multiple disjunct subregions 61、62….6N, and
It is overlapping with N-type drift region.N-type drift can be effectively reduced by p type island region in the overlapping injection of N-type drift region compared to traditional structure
The peak electric field in area and P type substrate is moved, and N-type drift region can be effectively relieved can not to be consumed completely by the P type substrate of low concentration
The defect of charge unbalance and junction electric field curvature effect caused by the greatest extent.In actual process, p type island region passes through ion implanting
It is formed, after knot of annealing, p type island region can be spread, since the opening direction that p type island region is proximate to p-shaped substrate is increasing, so note
The p type impurity concentration entered is gradually decreased from centre to both ends, so, the concentration by compensated N-type drift region is therefrom
Between gradually increased to both ends, therefore reduce the concentration of N-type drift region Yu P type substrate intersection, keep N-type drift region more preferable
Exhausted by P type substrate, so as to improve the pressure resistance of device.Meanwhile the difference of the window size according to p type island region subregion, injection
P type impurity concentration it is also different, impurity can be made to more easily reach balance under different drift region implantation dosages；In this way,
It is improved in the problem of straight line terminal structure and curvature terminal structure connected component, charge unbalance, to be optimized
Breakdown voltage.
Beneficial effects of the present invention are that the present invention is by using multiwindow (multiple subarea to the p type island region in curvature terminal structure
Domain) injection is in turn to the progress impurity compensation of N-type drift region concentration, so that the concentration of N-type drift region is reduced, so that N-type drift region
It is completely depleted by the P type substrate of low concentration, avoid device from puncturing in advance, thus the breakdown voltage optimized.
Detailed description of the invention
Fig. 1 is the terminal structure schematic diagram of traditional lateral high voltage power semiconductor device；
Fig. 2 is the terminal structure of lateral high voltage power device of the invention along XY directional profile schematic diagram；
The knot terminal of lateral high voltage power device Fig. 3 of the invention be divided into M subsegment along XY directional profile schematic diagram；
3D structure after the knot terminal knot of lateral high voltage power semiconductor device Fig. 4 of the invention；
Fig. 5 is the diagrammatic cross-section of device straight line terminal structure X-direction of the invention；
Fig. 6 is the diagrammatic cross-section of device curvature terminal structure Y-direction of the invention；
1 is drain electrode N+Contact zone, 2 be the N-type drift region in curvature junction termination structures, 2bFor the N in straight line junction termination structures
Type drift region, 3 be P type substrate, and 4 be grid polycrystalline silicon, and 5 be gate oxide, and 6 be the area P-well, 61、62….6NFor subregion, 7
For source electrode N+Contact zone, 8 be source electrode P+Contact zone.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
A kind of junction termination structures of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, the area Pwell 6, the p type island region inside N-type drift region 2, source electrode P+Contact zone 8, N-type drift region 2 and p type island region include
The square region of bottom and the half-circle area at top, the part between the inner and outer boundary of p type island region are circumferentially successively divided into multiple not phases
Subregion 6 even1、62….6N；N-type drift region 2 is filled between adjacent subarea domain, each subregion falls in N-type there are two vertex
Drift region 2 is on the inner boundary of p-shaped substrate 3, and two vertex are located on the outer boundary of N-type drift region 2, and each subregion is located at
One end of outer boundary is less than positioned at one end of inner boundary, and the length that subregion is located at one end of outer boundary is respectively d1,1、d1,2…
.d1,N, the length that subregion is located at one end of inner boundary is respectively d0,1、d0,2。。。。。。d0,N-1、d0,N, two neighboring subregion is located at
The distance between one end on N-type drift region inboard boundary is respectively L0,1、L0,2……L0,N、L0,N+1, two neighboring subregion position
In the distance between one end in N-type drift region outer boundaries be respectively L1,1、L1,2……L1,N、L1,N+1；It is grid above p type island region
Oxide layer 5, the surface of gate oxide 5 are grid polycrystalline silicons 4；Drain electrode N in curvature junction termination structures+Contact zone 1, N-type
Drift region 2, grid polycrystalline silicon 4, gate oxide 5, the area Pwell 6 respectively with the drain electrode N in straight line junction termination structures+Contact zone 1, N
Type drift region 2, grid polycrystalline silicon 4, gate oxide 5, the area Pwell 6 are connected and form ring structure；Wherein, curvature knot terminal knot
Drain electrode N in structure+1 surrounding n-type drift region 2 of contact zone has annular grid polysilicon 4, annular gate oxide 5 in N-type drift region 2
With the area Pwell 6, LdFor the drift region length of device.
The straight line junction termination structures, comprising: drain electrode N+Contact zone 1, N-type drift region 2b, P type substrate 3, grid polycrystalline silicon
4, gate oxide 5, the area P-well 6, source electrode N+Contact zone 7, source electrode P+Contact zone 8；The area P-well 6 and N-type drift region 2bPositioned at P
The upper layer of type substrate 3, wherein the area P-well 6 is located at centre, and both sides are N-type drift regions 2b, and the area P-well 6 and N-type drift region 2b
It is connected；N-type drift region 2bIn far from the area P-well 6 two sides be drain electrode N+The surface of contact zone 1, the area P-well 6 has and metal
Change the connected source electrode N of source electrode+Contact zone 7 and source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact
Area 7 is located at source electrode P+8 two sides of contact zone；Source electrode N+Contact zone 7 and N-type drift region 2bBetween 6 surface of the area P-well above be
Gate oxide 5 is grid polycrystalline silicon 4, L above the surface of gate oxide 5dFor the drift region length of device, the area P-well 6 with
N-type drift region 2bIt is not attached to and the spacing of the two is LP.Preferably, LPSpecific value range between 5 microns to 50 microns.
Straight line junction termination structures not only can be single RESURF, can also for double RESURF structure,
Triple RESURF structure is one such.
Subregion 61、62….6NSame mask plate is shared with the area P-well 6 or separately mask plate is added to carry out p type impurity injection
It is formed.
2 lower boundary of N-type drift region in curvature junction termination structures extends to and the N-type in straight line junction termination structures to centre
Drift region 2bCoboundary connection.
The each subregion 61、62….6NIt is divided into M son between the inner boundary of N-type drift region and outer boundary
Section, respectively 61,1, 61,2... ... 6N,M。
The dosage of the ion implanting of each subregion is identical, and in each subregion, M subsegment 61,1, 61,2... ... 61M's
The dosage of ion implanting successively successively decreases.
Preferably, subregion is located at the length d of one end of outer boundary1,1、d1,2….d1,NIdentical, subregion is located at inner boundary
One end length d0,1、d0,2。。。。。。d0,N-1、d0,NIdentical, two neighboring subregion is located at one on N-type drift region inboard boundary
The distance between end L0,1、L0,2……L0,N、L0,N+1Identical, two neighboring subregion is located at one in N-type drift region outer boundaries
The distance between end L1,1、L1,2……L1,N、L1,N+1It is identical.
Preferably, subregion 6 in curvature junction termination structures1Inner boundary be overlapped with 2 inner boundary of N-type drift region, Huo Zhezi
Region 61Inner boundary in the outside of 2 inner boundary of N-type drift region.
Single or multiple P-doped zones are formed after junction termination structures knot on the surface of N-type drift region 2 or in vivo
6a,1、6a,2、6a,3….6a,N.Its width and interval can pass through subregion 61、62、63。。。。。6NThe width and implantation dosage in area
To be adjusted.
The total technical solution of the present invention, in straight line terminal structure and curvature terminal structure connected component, curvature terminal structure
Middle 2 inner boundary of N-type drift region extends to and N-type drift region 2 in direct terminal structure to centrebInner boundary connection, the curvature
Part in terminal structure between the inner and outer boundary of p type island region is circumferentially successively divided into multiple disjunct subregions 61、62….6N, and
It is overlapping with N-type drift region 2.N can be effectively reduced by p type island region in the overlapping injection of N-type drift region 2 compared to traditional structure
The peak electric field of type drift region 2 and P type substrate 3, and N-type drift region 2 can be effectively relieved can not be by the P type substrate of low concentration
3 it is completely depleted caused by charge unbalance and junction electric field curvature effect defect.In actual process, p type island region passes through
Ion implanting is formed, and after knot of annealing, p type island region can be spread, since the opening direction that p type island region area is proximate to p-shaped substrate is more next
It is bigger, so the p type impurity concentration of injection is gradually decreased from centre to both ends, so, by compensated N-type drift region
2 concentration is gradually increased from centre to both ends, therefore reduces the concentration of N-type drift region 2 Yu 3 intersection of P type substrate, is made
N-type drift region 2 is preferably exhausted by P type substrate 3, so as to improve the pressure resistance of device.Meanwhile according to the window of p type island region subregion
The p type impurity concentration of the difference of size, injection is also different, impurity can be made to be easier under different drift region implantation dosages
Reach balance；In this way, in straight line terminal structure and curvature terminal structure connected component, the problem of charge unbalance, is improved,
Breakdown voltage to be optimized.
The knot terminal of lateral high voltage power device Fig. 3 of the invention be divided into M subsegment along XY directional profile schematic diagram；With
Unlike Fig. 2, by multiple subregions 6 in Fig. 2 in this example1、62….6NProgress segment processing, respectively 61,1, 61,2... ...
6N,M, wherein the number M (of M=1,2,3,4 ...) of segmentation can specifically modify according to the needs of design, and each segmentation
The distance between can be the same or different.
Fig. 4 is 3D structure after the knot terminal knot of lateral high voltage power device of the invention；If being mended after its knot without complete
P type impurity is repaid, then can form single or multiple P-doped zones 6 on the internal or surface of N-type drift region 2a,1、6a,2、6a,3…
.6a,N, width and interval can pass through subregion 61、62、63。。。。。6NThe width and implantation dosage in area is adjusted.
Fig. 5 is the diagrammatic cross-section of device straight line terminal structure X-direction of the invention；
Fig. 6 is the diagrammatic cross-section of device curvature terminal structure Y-direction of the invention；
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of junction termination structures of transverse direction high voltage power device, it is characterised in that: including straight line junction termination structures and curvature knot
Terminal structure；
The curvature junction termination structures include drain electrode N+Contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), the internal p type island region of gate oxide (5), the area Pwell (6), N-type drift region (2), source electrode P+Contact zone (8), N-type drift region
(2) and p type island region includes along straight line knot terminal to the square region of curvature knot terminal direction lower part and the half-circle area on top, p-type
Part between area's inner and outer boundary is circumferentially successively divided into multiple disjunct subregions (61、62….6N)；Adjacent subarea domain it
Between fill N-type drift region (2), each subregion there are two vertex fall in N-type drift region (2) close to p-shaped substrate (3) inner boundary
On, two vertex are located on the outer boundary of N-type drift region (2), and the length that each subregion is located at one end of outer boundary is less than position
Length in one end of inner boundary, the length that subregion is located at one end of outer boundary is respectively d1,1、d1,2….d1,N, subregion position
Length in one end of inner boundary is respectively d0,1、d0,2……d0,N-1、d0,N, two neighboring subregion is located on the inside of N-type drift region
The distance between borderline one end is respectively L0,2、L0,3……L0,N-1、L0,N, in addition, two sub-regions of outermost and straight line knot
N-type drift region (2 in terminal structureb) one lateral extent of inner boundary of coboundary is respectively L0,1、L0,N+1；Two neighboring subregion
The distance between one end in N-type drift region outer boundaries is respectively L1,2、L1,3……L1,N-1、L1,N, in addition, outermost
N-type drift region (2 in two sub-regions and straight line junction termination structuresb) one lateral extent of outer boundary of coboundary is respectively L1,1、
L1,N+1；It is gate oxide (5) above the area Pwell (6), the surface of gate oxide (5) is grid polycrystalline silicon (4)；Curvature knot
Drain electrode N in terminal structure+Contact zone (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide (5), the area Pwell (6)
Respectively with the drain electrode N in straight line junction termination structures+Contact zone (1), N-type drift region (2b), grid polycrystalline silicon (4), gate oxide
(5), the area Pwell (6) are connected and form ring structure, wherein the drain electrode N in curvature junction termination structures+Contact zone (1) surrounds N
Type drift region (2), N-type drift region (2) is interior annular grid polysilicon (4), annular gate oxide (5) and the area Pwell (6), Ld
For the drift region length of device straight line knot termination environment.
2. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: straight line knot terminal knot
Structure is single RESURF, double RESURF, and triple RESURF structure is one such.
3. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: the straight line knot terminal knot
Structure includes: drain electrode N+Contact zone (1), N-type drift region (2b), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-
The area well (6), source electrode N+Contact zone (7), source electrode P+Contact zone (8)；The area P-well (6) and N-type drift region (2b) it is located at p-type lining
The upper layer at bottom (3), wherein the area P-well (6) are located at centre, and both sides are N-type drift regions (2b), and the area P-well (6) and N-type are floated
Move area (2b) be connected；N-type drift region (2b) in far from the area P-well (6) two sides be drain electrode N+Contact zone (1), the area P-well (6)
Surface there is the source electrode N that is connected with metallizing source+Contact zone (7) and source electrode P+Contact zone (8), wherein source electrode P+Contact zone
(8) it is located at centre, source electrode N+Contact zone (7) is located at source electrode P+Contact zone (8) two sides；Source electrode N+Contact zone (7) and N-type drift region
(2b) between the area P-well (6) surface above be gate oxide (5), be that grid is more above the surface of gate oxide (5)
Crystal silicon (4), the area P-well (6) and N-type drift region (2b) be not attached to and the spacing of the two be LP。
4. the junction termination structures of transverse direction high voltage power device according to claim 3, it is characterised in that: subregion (61、62…
.6N) and the area P-well (6) share same mask plate or another plus mask plate carries out p type impurity and injects to be formed.
5. the junction termination structures of transverse direction high voltage power device according to claim 3, it is characterised in that: curvature knot terminal knot
N-type drift region (2) lower boundary in structure extends to and the N-type drift region (2 in straight line junction termination structures to centreb) coboundary company
It connects.
6. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: every height
Region (61、62….6N) between the inner boundary and outer boundary of N-type drift region it is divided into M subsegment, respectively (6N,1, 6N,2... ...
6N,M)。
7. the junction termination structures of transverse direction high voltage power device according to claim 6, it is characterised in that: each subregion
The dosage of ion implanting is identical, and in each subregion, M subsegment (6N,1, 6N,2... ... 6N,M) ion implanting dosage according to
It is secondary to successively decrease.
8. the junction termination structures of transverse direction high voltage power device according to claim 3, it is characterised in that: subregion is located at outer
The length d of the one end on boundary1,1、d1,2….d1,NIdentical, subregion is located at the length d of one end of inner boundary0,1、d0,2……
d0,N-1、d0,NIdentical, two neighboring subregion is located at the distance between one end on N-type drift region inboard boundary L0,2、L0,3……
L0,N-1、L0,NWith the N-type drift region (2 in two sub-regions of outermost and straight line junction termination structuresb) coboundary inner boundary side
Distance L0,1、L0,N+1Identical, two neighboring subregion is located at the distance between one end in N-type drift region outer boundaries L1,2、
L1,3……L1,N-1、L1,NWith the N-type drift region (2 in two sub-regions of outermost and straight line junction termination structuresb) coboundary it is outer
One lateral extent L of boundary1,1、L1,N+1It is identical.
9. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: curvature knot terminal knot
Subregion (6 in structure1) inner boundary be overlapped with N-type drift region (2) inner boundary or subregion (61) inner boundary N-type drift about
The outside of area (2) inner boundary.
10. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: junction termination structures
Single or multiple P-doped zones (6 are formed after knot on the surface of N-type drift region (2) or in vivoa,1、6a,2、6a,3…
.6a,N)。
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| US20040212032A1 (en) * | 2000-04-27 | 2004-10-28 | Fuji Electric Co., Ltd. | Lateral super-junction semiconductor device |
| US20050017300A1 (en) * | 2003-07-11 | 2005-01-27 | Salama C. Andre T. | Super junction / resurf ldmost (sjr-LDMOST) |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
| CN103165657A (en) * | 2013-03-13 | 2013-06-19 | 电子科技大学 | Junction terminal structure of transverse high voltage power semiconductor device |
| US20130221438A1 (en) * | 2012-02-24 | 2013-08-29 | Ming-Tsung Lee | High voltage metal-oxide-semiconductor transistor device and layout pattern thereof |
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2016
- 2016-08-25 CN CN201610725572.5A patent/CN106098753B/en not_active Expired - Fee Related
Patent Citations (5)
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|---|---|---|---|---|
| US20040212032A1 (en) * | 2000-04-27 | 2004-10-28 | Fuji Electric Co., Ltd. | Lateral super-junction semiconductor device |
| US20050017300A1 (en) * | 2003-07-11 | 2005-01-27 | Salama C. Andre T. | Super junction / resurf ldmost (sjr-LDMOST) |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
| US20130221438A1 (en) * | 2012-02-24 | 2013-08-29 | Ming-Tsung Lee | High voltage metal-oxide-semiconductor transistor device and layout pattern thereof |
| CN103165657A (en) * | 2013-03-13 | 2013-06-19 | 电子科技大学 | Junction terminal structure of transverse high voltage power semiconductor device |
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