CN106298874B - The junction termination structures of lateral high voltage power device - Google Patents
The junction termination structures of lateral high voltage power device Download PDFInfo
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- CN106298874B CN106298874B CN201610727469.4A CN201610727469A CN106298874B CN 106298874 B CN106298874 B CN 106298874B CN 201610727469 A CN201610727469 A CN 201610727469A CN 106298874 B CN106298874 B CN 106298874B
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- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005272 metallurgy Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
Abstract
The present invention provides a kind of junction termination structures of lateral high voltage power device, including straight line junction termination structures and curvature junction termination structures；Curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide, the area P-well, source electrode P+Contact zone；N in curvature junction termination structures+Contact zone, grid polycrystalline silicon, gate oxide, respectively with the N in straight line junction termination structures+Contact zone, grid polycrystalline silicon, gate oxide are connected and form ring structure, and the part between the inner and outer boundary of N-type drift region is circumferentially successively divided into multiple disjunct subregions 21、22....2N；Drain N+Contact zone surrounds subregion 21、22….2N, due to structural curvature knot terminal part of the invention N-type drift region compared with the n-type doping concentration of P type substrate intersection traditional structure to reduce many, so P type substrate can more effectively exhaust N-type drift region, so the pressure resistance of device is more preferably optimized.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of knot terminal knot of lateral high voltage power device
Structure.
Background technique
The development of high-voltage power integrated circuit be unable to do without the lateral high voltage power semiconductor device that can be integrated.Lateral high pressure function
Rate semiconductor devices is usually closing structure, including the structures such as round, racetrack and interdigitated.It is bent for traditional interdigitated configuration
The substrate concentration of rate termination environment is very low, and the concentration of drift region is relatively high, therefore substrate is unable to fully assisted depletion drift region,
This obtains high breakdown voltage and reliability to device and has a certain impact.
The Chinese patent of Publication No. CN102244092A discloses a kind of junction termination structures of lateral high voltage power device,
Fig. 1 show the domain structure of device, and device terminal structure includes drain electrode N+Contact zone, N-type drift region, P type substrate, grid are more
Crystal silicon, gate oxide, the area P-well, source electrode N+, source electrode P+.Device architecture is divided into two parts, including straight line junction termination structures and song
Rate junction termination structures.In straight line junction termination structures, the area P-well is connected with N-type drift region, when drain electrode applies high voltage, P-
The PN junction metallurgy junction that the area well is constituted with N-type drift region starts to exhaust, and the depletion region of lightly doped n type drift region will mainly be held
Load pressure resistance, the PN junction metallurgy junction that peak electric field appears in the area P-well and N-type drift region is constituted.To solve highly doped P-
The power line height for the PN junction curvature metallurgy junction that the area well and lightly doped n type drift region are constituted is concentrated, and device is caused to shift to an earlier date
Occur avalanche breakdown the problem of, the patent use curvature junction termination structures as shown in Figure 1, the highly doped area P-well with gently mix
Miscellaneous P type substrate is connected, and P type substrate is lightly doped and is connected with lightly doped n type drift region, and the highly doped area P-well and lightly doped n type are floated
The distance for moving area is LP.When device drain adds high pressure, device source fingertips curvature is lightly doped P type substrate and N is lightly doped
Type drift region is connected, and instead of the PN junction metallurgy junction that the highly doped area P-well and lightly doped n type drift region are constituted, is lightly doped
P type substrate is that depletion region increases additional charge, has not only been effectively reduced due to the high electric field peak value at the highly doped area P-well, but also with
N-type drift region introduces new peak electric field.Since P type substrate and N-type drift region are all lightly doped, so in same bias voltage
Under the conditions of, peak electric field reduces at metallurgical junction.It is served as a contrast again due to the highly doped area P-well of device finger tip curvature with p-type is lightly doped
The contact at bottom increases the radius at p-type curvature terminal, alleviates the concentrations of electric field line, avoids device in source fingertips song
The breakdown in advance of rate part improves the breakdown voltage of device finger tip curvature.Meanwhile the junction termination structures that the patent is proposed
It is also applied in longitudinal super-junction structure device.Fig. 1 is the structural schematic diagram of device X/Y plane, due to curvature knot terminal part N-type
The doping concentration of drift region is higher with respect to P type substrate part, and P type substrate is unable to fully exhaust N-type drift region, introduces in intersection
Higher electric field, the PN junction for causing P type substrate and N-type drift region to constitute puncture in advance, therefore the pressure resistance of device is not to optimize,
Reliability also reduces.
Summary of the invention
It is to be solved by this invention, aiming at the drift of above-mentioned traditional devices curvature terminal structure division high-dopant concentration
The substrate p type impurity that the N-type impurity in area was unable to fully be lightly doped concentration sufficiently exhausts and the drift region generated and substrate are handed over
Charge unbalance influences the problem of pressure resistance and reliability at boundary, proposes a kind of junction termination structures of lateral high voltage power device.
For achieving the above object, technical solution of the present invention is as follows:
A kind of junction termination structures of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, grid oxygen
Change floor, the area P-well, source electrode P+Contact zone；The area P-well surface is gate oxide, and the surface of gate oxide is grid
Pole polysilicon；N in curvature junction termination structures+Contact zone, grid polycrystalline silicon, gate oxide, respectively with straight line junction termination structures
In N+Contact zone, grid polycrystalline silicon, gate oxide are connected and form ring structure, and N-type drift region is divided into the straightway of bottom
With the semi-circular segments at top, the part between the inner and outer boundary of N-type drift region is circumferentially successively divided into multiple disjunct subregions
21、22….2N；One end that each subregion is located at outer boundary is greater than positioned at one end of inner boundary, and subregion is located at the one of outer boundary
The length at end is respectively L1,1、L1,2….L1,N, the outer boundary length of N-type drift region is Lout；Adjacent subarea domain is located at outer boundary
The distance between one end is respectively d1,1、d1,2….d1,N-1, wherein L1,1、L1,2….L1,NAnd d1,1、d1,2….d1,N-1Value
L is arrived 0outBetween, andThe length that subregion is located at one end of inner boundary is respectively L0,1、
L0,2….L0,N；It is respectively d that adjacent subarea domain, which is located at the distance between one end of inner boundary,0,1、d0,2….d0,N-1, N-type drift region
Inner boundary length be Lin, wherein L0,1、L0,2….L0,NAnd d0,1、d0,2….d0,N-1Value 0 between Lin, andDrain N+Contact zone surrounds subregion 21、22….2N, subregion 21、22….2NInside there is annular
Grid polycrystalline silicon and annular gate oxide, the area P-well and subregion 21、22….2NIt is not attached to and the area P-well and subregion 21
Inner boundary distance be LP。
It is preferred that straight line junction termination structures be single RESURF structure, double RESURF structure,
Triple RESURF structure is one such.
It is preferred that the straight line junction termination structures, comprising: drain electrode N+Contact zone, N-type drift region 2b, P type substrate,
Grid polycrystalline silicon, gate oxide, the area P-well, source electrode N+Contact zone, source electrode P+Contact zone；The area P-well and N-type drift region 2bPosition
In the upper layer of P type substrate, wherein the area P-well is located at centre, and both sides are N-type drift regions 2b, and the area P-well and N-type drift region 2b
It is connected；N-type drift region 2bIn far from the area P-well two sides be drain electrode N+The surface of contact zone, the area P-well has and metallization
The connected source electrode N of source electrode+Contact zone and source electrode P+Contact zone, wherein source electrode P+Contact zone is located at centre, source electrode N+Contact zone is located at
Source electrode P+Contact zone two sides；Source electrode N+Contact zone and N-type drift region 2bBetween the area P-well surface above be gate oxide,
It is grid polycrystalline silicon, L above the surface of gate oxidedFor the drift region length of device.
It is preferred that the subregion 21、22….2NIt is divided between the inner boundary and outer boundary of N-type drift region
M subsegment, wherein S1、S2….SMThe width of respectively each subsegment, r1、r2….rM-1It is followed successively by the distance between adjacent sub-section,
Middle S1、S2….SM、r1、r2….rM-1Value 0 arrive Ld-LpBetween, and
It is preferred that N-type drift region forms a complete annular N-type drift region 2 after annealinga。
It is preferred that N-type drift region each subregion is located at the length L of one end of inner boundary0,1、L0,2….L0,NPhase
Together, adjacent subarea domain is located at the distance between one end of inner boundary d0,1、d0,2….d0,N-1Identical, subregion is located at outer boundary
The length L of one end1,1、L1,2….L1,NIdentical, adjacent subarea domain is located at the distance between one end of outer boundary d1,1、d1,2…
.d1,N-1It is identical.
It is preferred that the dosage of the ion implanting of each subregion is identical, the ion implantation dosage phase of each subsegment
Together.
It is preferred that the width S of each subsegment of subregion1、S2….SMIt is identical.
It is preferred that the N-type drift region 2 in linear type terminal structurebIt is divided into multistage in X direction.
It is preferred that the semiconductor material of junction termination structures is silicon or silicon carbide.
The invention has the benefit that due to N-type drift region 2aDoping concentration will much higher than P type substrate doping it is dense
Degree, N-type drift region each subregion 21、22….2NP type substrate compensation between them can be fallen, the last every height of N-type drift region
Region 21、22….2NIt can connect together to form a complete N-type drift region 2a, the N-type drift region 2 of this junction termination structuresaIt mixes
Miscellaneous distribution is the distribution that concentration is higher and higher from inside to outside, the uniform dopant profiles of N-type drift region with traditional junction termination structures
The N-type drift region and P type substrate intersection N-type of the curvature knot terminal part of different therefore of the invention junction termination structures are miscellaneous
The concentration of matter is denseer than the N-type drift region of the curvature knot terminal part of traditional junction termination structures and P type substrate intersection N-type impurity
Degree wants low, so the N-type drift region of the curvature knot terminal part of junction termination structures of the invention can preferably be consumed by P type substrate
To the greatest extent, the phenomenon that charge unbalance will not being generated, the peak value electric field of N-type drift region and P type substrate intersection is reduced；It works normally
When, it can be by drain electrode to N+Contact zone adds high pressure, therefore the N-type drift region of same kind doping is also high potential, p-type lining
Bottom connects low potential by underlayer electrode, so the N-type drift region of curvature knot terminal part and the PN junction that P type substrate is constituted are reverse-biased, P
Type substrate can assist the area P-well to exhaust N-type drift region, due to structural curvature knot terminal part of the invention N-type drift region with
The n-type doping concentration of P type substrate intersection will reduce many compared to traditional structure, so P type substrate can more effectively exhaust N-type
Drift region, so the pressure resistance of device is more preferably optimized.
Detailed description of the invention
Fig. 1 is the domain schematic diagram of the junction termination structures of traditional lateral high voltage power semiconductor device；
Fig. 2 is the domain schematic diagram of curvature junction termination structures of the invention；
Fig. 3 is the domain schematic diagram that curvature junction termination structures of the invention are divided into M subsegment；
Fig. 4 is that lateral high voltage power device of the invention injects the terminal structure 3d schematic diagram after knot；
Fig. 5 is X-direction sectional view of the junction termination structures of lateral high voltage power device of the invention since origin；
Fig. 6 is the sectional view of Y-direction of the junction termination structures of lateral high voltage power device of the invention since origin；
1 is drain electrode N+Contact zone, 2 be the N-type drift region in curvature junction termination structures, and 2a is complete annular N-type drift
Area, 2bIt is P type substrate for the N-type drift region in straight line junction termination structures, 3,4 be grid polycrystalline silicon, and 5 be gate oxide, and 6 be P-
The area well, 7 be source electrode N+Contact zone, 8 be source electrode P+Contact zone, 21、22….2NFor subregion.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
A kind of junction termination structures of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, the area P-well 6, source electrode P+Contact zone 8；6 surface of the area P-well is gate oxide 5, the table of gate oxide 5
It is grid polycrystalline silicon 4 above face；N in curvature junction termination structures+Contact zone 1, grid polycrystalline silicon 4, gate oxide 5, respectively with
N in straight line junction termination structures+Contact zone 1, grid polycrystalline silicon 4, gate oxide 5 are connected and form ring structure, N-type drift region
2 are divided into the semi-circular segments at the straightway of bottom and top, and the part between the inner and outer boundary of N-type drift region 2 is circumferentially successively divided into
Multiple disjunct subregions 21、22….2N；One end that each subregion is located at outer boundary is greater than positioned at one end of inner boundary, son
The length that region is located at one end of outer boundary is respectively L1,1、L1,2….L1,N, the outer boundary length of N-type drift region 2 is Lout；Phase
It is respectively d that adjacent subregion, which is located at the distance between one end of outer boundary,1,1、d1,2….d1,N-1, wherein L1,1、L1,2….L1,NAnd
d1,1、d1,2….d1,N-1Value 0 arrive LoutBetween, andSubregion is located at inner boundary
The length of one end be respectively L0,1、L0,2….L0,N；Adjacent subarea domain is located at the distance between one end of inner boundary
d0,1、d0,2….d0,N-1, the inner boundary length of N-type drift region is Lin, wherein L0,1、L0,2….L0,NAnd d0,1、d0,2….d0,N-1
Value 0 between Lin, andDrain N+Contact zone 1 surrounds subregion 21、22…
.2N, subregion 21、22….2NInside there are annular grid polysilicon 4 and annular gate oxide 5, the area P-well 6 and subregion 21、
22….2NIt is not attached to and the area P-well 6 and subregion 21Inner boundary distance be LP。
The straight line junction termination structures, comprising: drain electrode N+Contact zone 1, N-type drift region 2b, P type substrate 3, grid polycrystalline silicon
4, gate oxide 5, the area P-well 6, source electrode N+Contact zone 7, source electrode P+Contact zone 8；The area P-well 6 and N-type drift region 2bPositioned at P
The upper layer of type substrate 3, wherein the area P-well 6 is located at centre, and both sides are N-type drift regions 2b, and the area P-well 6 and N-type drift region 2b
It is connected；N-type drift region 2bIn far from the area P-well 6 two sides be drain electrode N+The surface of contact zone 1, the area P-well 6 has and metal
Change the connected source electrode N of source electrode+Contact zone 7 and source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact
Area 7 is located at source electrode P+8 two sides of contact zone；Source electrode N+Contact zone 7 and N-type drift region 2bBetween 6 surface of the area P-well above be
Gate oxide 5 is grid polycrystalline silicon 4, L above the surface of gate oxide 5dFor the drift region length of device.
Straight line junction termination structures not only can be single RESURF structure, can also for double RESURF structure,
Triple RESURF structure is one such.
N-type drift region 2 forms a complete annular N-type drift region 2 after annealinga。
2 each subregion of N-type drift region is located at the length L of one end of inner boundary0,1、L0,2….L0,NIt is identical, adjacent subarea
Domain is located at the distance between one end of inner boundary d0,1、d0,2….d0,N-1Identical, subregion is located at the length of one end of outer boundary
L1,1、L1,2….L1,NIdentical, adjacent subarea domain is located at the distance between one end of outer boundary d1,1、d1,2….d1,N-1It is identical.
The dosage of the ion implanting of each subregion is identical, and the ion implantation dosage of each subsegment is identical.
As another mode of texturing, the subregion 21、22….2NN-type drift region inner boundary and outer boundary it
Between be divided into M subsegment, wherein S1、S2….SMThe width of respectively each subsegment, r1、r2….rM-1It is followed successively by between adjacent sub-section
Distance, wherein S1、S2….SM、r1、r2….rM-1Value 0 arrive Ld-LpBetween, and
The width S of each subsegment of subregion1、S2….SMIt is identical.
N-type drift region 2 as another mode of texturing, in linear type terminal structurebIt is divided into multistage in X direction.
The semiconductor material of junction termination structures is silicon or silicon carbide.
Due to N-type drift region 2aDoping concentration will be much higher than P type substrate doping concentration, each sub-district of N-type drift region
Domain 21、22….2NP type substrate compensation between them can be fallen, last N-type drift region each subregion 21、22….2NOne can be connected in
It rises and forms a complete N-type drift region 2a, the N-type drift region 2 of this junction termination structuresaDopant profiles are concentration from inside to outside
Higher and higher distribution, the different therefore of the invention knot with the uniform dopant profiles of N-type drift region of traditional junction termination structures
The N-type drift region of the curvature knot terminal part of terminal structure and the concentration of P type substrate intersection N-type impurity are than traditional knot terminal knot
The concentration of the N-type drift region and P type substrate intersection N-type impurity of the curvature knot terminal part of structure wants low, so knot of the invention
The N-type drift region of the curvature knot terminal part of terminal structure can preferably be exhausted by P type substrate, will not generate charge unbalance
The phenomenon that, reduce the peak value electric field of N-type drift region and P type substrate intersection；It, can be by drain electrode to N when normal work+It connects
It touches area and adds high pressure, therefore the N-type drift region of same kind doping is also high potential, P type substrate connects low electricity by underlayer electrode
Position, so the N-type drift region of curvature knot terminal part and the PN junction that P type substrate is constituted are reverse-biased, P type substrate can assist the area P-well
6 exhaust N-type drift region, due to the N-type drift region of structural curvature knot terminal part of the invention and the N-type of P type substrate intersection
Doping concentration will reduce many compared to traditional structure, so P type substrate can more effectively exhaust N-type drift region, so device
Pressure resistance is more preferably optimized.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of junction termination structures of transverse direction high voltage power device, it is characterised in that: including straight line junction termination structures and curvature knot
Terminal structure；
The curvature junction termination structures include drain electrode N+Contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), gate oxide (5), the area P-well (6), source electrode P+Contact zone (8)；The area P-well (6) surface is gate oxide (5),
The surface of gate oxide (5) is grid polycrystalline silicon (4)；N in curvature junction termination structures+Contact zone (1), grid polycrystalline silicon
(4), gate oxide (5), respectively with the N in straight line junction termination structures+Contact zone (1), grid polycrystalline silicon (4), gate oxide (5)
Be connected and form ring structure, N-type drift region (2) be divided into along straight line knot terminal to curvature knot terminal direction bottom straightway and
The semi-circular segments at top, the part between the inner and outer boundary of N-type drift region (2) are circumferentially successively divided into multiple disjunct subregions
(21、22....2N)；One end that each subregion is located at outer boundary is greater than positioned at one end of inner boundary, and subregion is located at outer boundary
The length of one end be respectively L1,1、L1,2....L1,N, the outer boundary length of N-type drift region (2) is Lout；Adjacent subarea domain is located at
The distance between one end of outer boundary is respectively d1,1、d1,2....d1,N-1, wherein L1,1、L1,2....L1,NAnd d1,1、d1, 2....d1,N-1Value 0 arrive LoutBetween, andSubregion is located at one end of inner boundary
Length be respectively L0,1、L0,2....L0,N；It is respectively d that adjacent subarea domain, which is located at the distance between one end of inner boundary,0,1、
d0,2....d0,N-1, the inner boundary length of N-type drift region is Lin, wherein L0,1、L0,2....L0,NAnd d0,1、d0,2....d0,N-1
Value 0 between Lin, andDrain N+Contact zone (1) surrounds subregion (21、
22....2N), subregion (21、22....2N) in have annular grid polysilicon (4) and annular gate oxide (5), the area P-well (6)
With subregion (21、22....2N) be not attached to and the area P-well (6) and the first subregion (21) inner boundary distance be LP。
2. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: straight line knot terminal knot
Structure is that single RESURF structure, double RESURF structure, triple RESURF structure are one such.
3. the junction termination structures of transverse direction high voltage power device according to claim 2, it is characterised in that: the straight line knot is whole
End structure, comprising: drain electrode N+Contact zone (1), N-type drift region (2b), P type substrate (3), grid polycrystalline silicon (4), gate oxide
(5), the area P-well (6), source electrode N+Contact zone (7), source electrode P+Contact zone (8)；The area P-well (6) and N-type drift region (2b) be located at
The upper layer of P type substrate (3), wherein the area P-well (6) are located at centre, and both sides are N-type drift regions (2b), and the area P-well (6) and N
Type drift region (2b) be connected；N-type drift region (2b) in far from the area P-well (6) two sides be drain electrode N+Contact zone (1), P-well
The surface in area (6) has the source electrode N being connected with metallizing source+Contact zone (7) and source electrode P+Contact zone (8), wherein source electrode P+It connects
It touches area (8) and is located at centre, source electrode N+Contact zone (7) is located at source electrode P+Contact zone (8) two sides；Source electrode N+Contact zone (7) and N-type are floated
Move area (2b) between the area P-well (6) surface above be gate oxide (5), be grid above the surface of gate oxide (5)
Pole polysilicon (4), LdFor the drift region length of device.
4. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: the subregion
(21、22….2N) between the inner boundary and outer boundary of N-type drift region it is divided into M subsegment, wherein S1、S2....SMIt is respectively each
The width of subsegment, r1、r2....rM-1It is followed successively by the distance between adjacent sub-section, wherein S1、S2....SM、r1、r2....rM-1's
Value arrives L 0d-LpBetween, and
5. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: N-type drift region (2)
A complete annular N-type drift region (2 is formed after annealinga)。
6. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: N-type drift region (2)
Each subregion is located at the length L of one end of inner boundary0,1、L0,2....L0,NIdentical, adjacent subarea domain is located at one end of inner boundary
The distance between d0,1、d0,2....d0,N-1Identical, subregion is located at the length L of one end of outer boundary1,1、L1,2....L1,NIt is identical,
Adjacent subarea domain is located at the distance between one end of outer boundary d1,1、d1,2....d1,N-1It is identical.
7. the junction termination structures of transverse direction high voltage power device according to claim 4, it is characterised in that: each subregion
The dosage of ion implanting is identical, and the ion implantation dosage of each subsegment is identical.
8. the junction termination structures of transverse direction high voltage power device according to claim 4, it is characterised in that: each of subregion
The width S of subsegment1、S2....SMIt is identical.
9. the junction termination structures of transverse direction high voltage power device according to claim 3, it is characterised in that: linear type terminal knot
N-type drift region (2 in structureb) it is divided into multistage in X direction.
10. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: the half of junction termination structures
Conductor material is silicon or silicon carbide.
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