CN105047694B - A kind of junction termination structures of horizontal high voltage power device - Google Patents
A kind of junction termination structures of horizontal high voltage power device Download PDFInfo
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- CN105047694B CN105047694B CN201510542990.6A CN201510542990A CN105047694B CN 105047694 B CN105047694 B CN 105047694B CN 201510542990 A CN201510542990 A CN 201510542990A CN 105047694 B CN105047694 B CN 105047694B
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- 239000000758 substrate Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 241001212149 Cathetus Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
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Abstract
The invention belongs to technical field of semiconductors, more particularly to a kind of junction termination structures of horizontal high voltage power device.The structure of the present invention, the inwall of N-type drift region 2 and the inwall of p type buried layer 9 extend to centre be connected with the inwall of N-type drift region 2 in direct junction termination structures and the inwall of p type buried layer 9 respectively in curvature junction termination structures, N-type drift region 2 and the inwall vertical direction of p type buried layer 9 all have ɑ degree angles in bearing of trend and direct junction termination structures, and ɑ degree angles are 45 degree；It so can effectively alleviate the curvature effect of junction electric field.The vertical direction of bearing of trend in junction, p type buried layer 9, apart from for 5 microns, improves charge unbalance problem beyond N-type drift region 2.Beneficial effects of the present invention are to improve the problem of straight line junction termination structures are with curvature junction termination structures connected component charge unbalance and junction electric field curvature effect, it is to avoid device punctures in advance, so that the breakdown voltage optimized.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of knot terminal knot of horizontal high voltage power device
Structure.
Background technology
The development of high-voltage power integrated circuit be unable to do without horizontal high voltage power semiconductor device that can be integrated.Horizontal high pressure work(
Rate semiconductor devices is usually closing structure, including the structure such as circular, racetrack and interdigitated.For the racetrack structure of closure
And interdigitated configuration, small curvature terminal occurs in racetrack portion and tip portion, electric field line is easily sent out at small radius of curvature
Raw to concentrate, so as to cause device that avalanche breakdown occurs in advance at small radius of curvature, this is for horizontal high voltage power device domain
Structure proposes new challenge.
Publication No. CN102244092A Chinese patent discloses a kind of " knot terminal knot of horizontal high voltage power device
Structure, as shown in figure 1, device terminal structure includes drain electrode N+1st, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide
5th, P-well areas 6, source electrode N+7th, source electrode P+8.Device architecture is divided into two parts, including straight line junction termination structures and curvature knot terminal
Structure.In straight line junction termination structures, P-well areas 6 are connected with N-type drift region 2, when drain electrode applies high voltage, P-well areas 6
The metallurgical junction of PN junction constituted with N-type drift region 2 starts to exhaust, and the depletion region of lightly doped n type drift region 2 will mainly undertake resistance to
Pressure, the metallurgical junction of PN junction that peak electric field appears in P-well areas 6 with N-type drift region 2 is constituted.To solve highly doped P-well
Area 6 and the power line height of the metallurgical junction of the PN junction curvature that lightly doped n type drift region 2 is constituted are concentrated, and cause device to send out in advance
The problem of raw avalanche breakdown, patent employs curvature junction termination structures as shown in Figure 1, and highly doped P-well areas 6 are with being lightly doped P
Type substrate 3 is connected, and P type substrate 3 is lightly doped and is connected with lightly doped n type drift region 2, and highly doped P-well areas 6 float with lightly doped n type
The distance for moving area 2 is LP.When device drain adds high pressure, P type substrate 3 is lightly doped with being lightly doped in device source fingertips curvature
N-type drift region 2 is connected, and instead of highly doped P-well areas 6 and the metallurgical junction of the PN junction that lightly doped n type drift region 2 is constituted, gently
Doped p-type substrate 3 is that depletion region increases additional charge, has both been effectively reduced due to the high electric field peak at highly doped P-well areas 6
Value, and introduce new peak electric field with N-type drift region 2.Because P type substrate 3 and N-type drift region 2 are all lightly doped, so same
Deng under bias voltage conditions, peak electric field is reduced at metallurgical junction.Again due to the highly doped P-well areas 6 of device finger tip curvature with
The contact that P type substrate 3 is lightly doped increases radius at p-type curvature terminal, alleviates the concentrations of electric field line, it is to avoid device
In puncturing in advance for source fingertips curvature, the breakdown voltage of device finger tip curvature is improved.Meanwhile, the patent is proposed
Junction termination structures be also applied in triple RESURF structure devices.Fig. 2 is N-type drift region 2 in device straight line junction termination structures
For the device profile schematic diagram of triple RESURF structures；Fig. 3 is that N-type drift region 2 is triple in device curvature junction termination structures
The device profile schematic diagram of RESURF structures.However, the patent is under triple RESURF structure devices, to straight line junction termination structures
Do not optimized with the terminal structure of curvature junction termination structures connected component, in connected component, due to electric charge it is uneven with
And junction electric field still suffers from curvature effect, power device can be caused to puncture in advance, therefore it is not optimal value that device is pressure-resistant.
The content of the invention
It is to be solved by this invention, aiming at lacking for traditional devices charge unbalance and junction electric field curvature effect
Fall into, propose a kind of junction termination structures of horizontal high voltage power device.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of junction termination structures of horizontal high voltage power device, as shown in figure 4, including straight line junction termination structures and curvature knot
Terminal structure；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone 1,
N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone
8th, p type buried layer 9；P-well areas 6 are located at the upper strata of P type substrate 3 with N-type drift region 2, and wherein P-well areas 6 are located at centre, both sides
It is N-type drift region 2, and P-well areas 6 are connected with N-type drift region 2；The both sides away from P-well areas 6 are leakages in N-type drift region 2
Pole N+Contact zone 1, the surface in P-well areas 6 has the source electrode N being connected with metallizing source+Contact zone 7 and source electrode P+Contact zone 8,
Wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；P type buried layer 9 floats positioned at N-type
Move in area 2, in P-well areas 6 and N+Between contact zone 1；Source electrode N+The table of P-well areas 6 between contact zone 7 and N-type drift region 2
It above gate oxide 5, the surface of gate oxide 5 is grid polycrystalline silicon 4 to be above face.
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8, p type buried layer 9；The surface of P-well areas 6 is gate oxide 5, grid oxygen
The surface for changing layer 5 is grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift region 2, gate polycrystalline
Silicon 4, gate oxide 5 and p type buried layer 9 respectively with the N in straight line junction termination structures+Contact zone 1, N-type drift region 2, gate polycrystalline
Silicon 4, gate oxide 5 are connected with p type buried layer 9 and form loop configuration；Wherein, the annular N in curvature junction termination structures+Contact zone
There are annular grid polysilicon 4 and annular in annular N-type drift region 2 in the annular N-type drift region 2 of 1 encirclement, curvature junction termination structures
Gate oxide 5；From unlike " the P-well areas 6 in straight line junction termination structures are connected with N-type drift region 2 ", curvature knot terminal
P-well areas 6 in structure are not attached to N-type drift region 2 and each other away from for LP, LPSpecific span at a few micrometers to number
Between ten microns；
Characterized in that, N-type drift region 2 in N-type drift region 2 and straight line junction termination structures in the curvature junction termination structures
The end of junction N-type drift region 2 in the side in P-well areas 6, curvature junction termination structures has the first inclined-plane, described the
One inclined-plane is connected with P-well areas 6, and the first inclined-plane has ɑ degree angles with device crossline direction；P in the curvature junction termination structures
The type buried regions 9 and junction of p type buried layer 9 P in the side in P-well areas 6, curvature junction termination structures in straight line junction termination structures
The end of type buried regions 9 has the second inclined-plane, and second inclined-plane is parallel with the first inclined-plane；The specific span of ɑ degree angles is
30 degree to 60 degree；Spacing between first inclined-plane and the second inclined-plane is b, and b specific span is 0 to 15 microns；Institute
State the annular N-type drift region 2 and p-type in the inwall and curvature junction termination structures of the ring-shaped P type buried regions 9 in curvature junction termination structures
The spacing of the junction of substrate 3 is a.
The total technical scheme of the present invention, in straight line junction termination structures and curvature junction termination structures connected component, curvature knot is whole
The inwall of N-type drift region 2 is extended to centre and is connected with the inwall of N-type drift region 2 in direct junction termination structures in end structure, extension side
There is ɑ degree angles to the inwall vertical direction of N-type drift region in direct junction termination structures 2, the specific span of ɑ degree angles is
30 degree to 60 degree；The inwall of p type buried layer 9 is extended to and p-type in direct junction termination structures to centre in the curvature junction termination structures
The inwall of buried regions 9 is connected, and bearing of trend has ɑ degree angles, ɑ degree folder with the inwall vertical direction of p type buried layer 9 in direct junction termination structures
The specific span at angle is 30 degree to 60 degree；Compared to traditional structure, straight line junction termination structures are connected with ɑ degree angle in junction
With curvature junction termination structures, it can effectively alleviate the curvature effect of junction electric field.The vertical direction of bearing of trend in junction,
There are specific span 0-15 microns of spacing b, b between p type buried layer 9 and N-type drift region 2.In actual process, N-type drift
Area 2 is formed by ion implanting, after annealing knot, and p type buried layer 9 can be exceeded N-type drift region by N-type drift region 2 to external diffusion
2 some distances so that the N-type drift region 2 spread out has p type impurity to exhaust, so, in straight line junction termination structures and curvature knot
The problem of terminal structure connected component, charge unbalance, is improved, so that the breakdown voltage optimized.In such scheme
In, it should be appreciated that the outer wall of p type buried layer 9 refers in p type buried layer 9 and curvature junction termination structures in straight line junction termination structures
P type buried layer 9 is close to the side of N+ contact zones 1 in whole device, and inwall refers to that p type buried layer 9 is close to P type substrate 3 in whole device
Side；The outer wall at other positions and inwall are this implication.
Further, in the curvature junction termination structures in the outer wall of p type buried layer 9 and straight line junction termination structures outside p type buried layer 9
Wall is located in N-type drift region 2, in the inwall and curvature junction termination structures of the ring-shaped P type buried regions 9 in the curvature junction termination structures
Annular N-type drift region 2 and the spacing of junction of P type substrate 3 be a, a specific span is 0 to 15 microns.
Further, the inwall of p type buried layer 9 is located at the N-type in curvature junction termination structures in the straight line junction termination structures
In drift region 2.
Further, the inwall of p type buried layer 9 is located at the p-type in curvature junction termination structures in the straight line junction termination structures
In substrate 3.
Further, second inclined-plane is located in the N-type drift region 2 in curvature junction termination structures.
Further, second inclined-plane is located in the P type substrate 3 in curvature junction termination structures.
Beneficial effects of the present invention are that the present invention is by straight line junction termination structures and curvature junction termination structures connected component
Terminal structure analyzed and optimized, improve straight line junction termination structures and curvature junction termination structures connected component charge unbalance
The problem of and electric field curvature effect, it is to avoid device punctures in advance, so that the breakdown voltage optimized.
Brief description of the drawings
Fig. 1 is the junction termination structures schematic diagram of traditional horizontal high voltage power semiconductor device；
Fig. 2 is that N-type drift region 2 is that the device profiles of triple RESURF structures is shown in traditional device straight line junction termination structures
It is intended to；
Fig. 3 is that N-type drift region 2 is that the device profiles of triple RESURF structures is shown in traditional device curvature junction termination structures
It is intended to；
Fig. 4 is the junction termination structures schematic diagram of the horizontal high voltage power device of the present invention；
Fig. 5 is the structural representation of embodiment 1；
Fig. 6 is the structural representation of embodiment 2；
Fig. 7 is the structural representation of embodiment 3；
Fig. 8 is the structural representation of embodiment 4.
Embodiment
With reference to the accompanying drawings and examples, technical scheme is described in detail：
Embodiment 1：
As shown in figure 5, the structure of this example is to include straight line junction termination structures and curvature junction termination structures；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone 1,
N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone
8th, p type buried layer 9；P-well areas 6 are located at the upper strata of P type substrate 3 with N-type drift region 2, and wherein P-well areas 6 are located at centre, both sides
It is N-type drift region 2, and P-well areas 6 are connected with N-type drift region 2；The both sides away from P-well areas 6 are leakages in N-type drift region 2
Pole N+Contact zone 1, the surface in P-well areas 6 has the source electrode N being connected with metallizing source+Contact zone 7 and source electrode P+Contact zone 8,
Wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；P type buried layer 9 floats positioned at N-type
Move in area 2, in P-well areas 6 and N+Between contact zone 1；Source electrode N+The table of P-well areas 6 between contact zone 7 and N-type drift region 2
It above gate oxide 5, the surface of gate oxide 5 is grid polycrystalline silicon 4 to be above face.
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8, p type buried layer 9；The surface of P-well areas 6 is gate oxide 5, grid oxygen
The surface for changing layer 5 is grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift region 2, gate polycrystalline
Silicon 4, gate oxide 5 and p type buried layer 9 respectively with the N in straight line junction termination structures+Contact zone 1, N-type drift region 2, gate polycrystalline
Silicon 4, gate oxide 5 are connected with p type buried layer 9 and form loop configuration；Wherein, the annular N in curvature junction termination structures+Contact zone
There are annular grid polysilicon 4 and annular in annular N-type drift region 2 in the annular N-type drift region 2 of 1 encirclement, curvature junction termination structures
Gate oxide 5；From unlike " the P-well areas 6 in straight line junction termination structures are connected with N-type drift region 2 ", curvature knot terminal
P-well areas 6 in structure are not attached to N-type drift region 2 and each other away from for LP, LPSpecific span at a few micrometers to number
Between ten microns；
The inwall of N-type drift region 2 is extended to centre and floated with N-type in direct junction termination structures in the curvature junction termination structures
The connection of the inwall of area 2 is moved, bearing of trend has ɑ degree angles, ɑ degree with the inwall vertical direction of N-type drift region 2 in direct junction termination structures
Angle is 45 degree；The inwall of p type buried layer 9 is extended to and p-type in direct junction termination structures to centre in the curvature junction termination structures
The inwall of buried regions 9 is connected, and bearing of trend has ɑ degree angles, ɑ degree folder with the inwall vertical direction of p type buried layer 9 in direct junction termination structures
Angle is 45 degree；The junction of p type buried layer 9 is located at P in p type buried layer 9 and curvature junction termination structures in the straight line junction termination structures
In type substrate 3, the junction of p type buried layer 9 and directly knot in p type buried layer 9 and curvature junction termination structures in straight line junction termination structures
The spacing of the junction of N-type drift region 2 is b in N-type drift region 2 and curvature junction termination structures in terminal structure, and b is 5 microns；Institute
The inwall for stating the ring-shaped P type buried regions 9 in curvature junction termination structures is located in N-type drift region 2, the annular in curvature junction termination structures
The inwall of p type buried layer 9 is a, a with the annular N-type drift region 2 and the spacing of the junction of P type substrate 3 in curvature junction termination structures
For 5 microns.
The operation principle of this example is：The inwall of N-type drift region 2 is extended to directly tying eventually to centre in curvature junction termination structures
The inwall of N-type drift region 2 is connected in end structure, and bearing of trend has with the inwall vertical direction of N-type drift region 2 in direct junction termination structures
There are ɑ degree angles, ɑ degree angles are 45 degree；The inwall of p type buried layer 9 is extended to directly tying to centre in the curvature junction termination structures
The inwall of p type buried layer 9 is connected in terminal structure, and bearing of trend has with the inwall vertical direction of p type buried layer in direct junction termination structures 9
ɑ degree angles, ɑ degree angles are 45 degree；So, compared to traditional structure, straight line junction termination structures are connected with 45 degree of angles in junction
With curvature junction termination structures, it can effectively alleviate the curvature effect of junction electric field.Straight line junction termination structures and curvature knot terminal
Structure connected component, the vertical direction of bearing of trend in junction, p type buried layer 9 is beyond N-type drift region 2 apart from for 5 microns.
In actual process, N-type drift region 2 is formed by ion implanting, and after annealing knot, N-type drift region 2 can spread, by p type buried layer
9 beyond some distances of N-type drift region 2 so that the N-type drift region 2 spread out has p type impurity to exhaust, so, whole in straight line knot
End structure and curvature junction termination structures connected component, the problem of charge unbalance is with junction electric field curvature effect are improved,
So as to the breakdown voltage more optimized.
Embodiment 2
As shown in fig. 6, this example place different from embodiment 1 is, the ring-shaped P type in this example mean curvature junction termination structures
The inwall of buried regions 9 is located in P type substrate 3, and its principle is same as Example 1.
Embodiment 3
As shown in fig. 7, this example place different from embodiment 2 is, the He of this example cathetus junction termination structures p type buried layer 9
The junction of p type buried layer 9 is located in N-type drift region 2 in curvature junction termination structures, and its principle is same as Example 2.
Embodiment 4
As shown in figure 8, this example place different from embodiment 1 is, the He of this example cathetus junction termination structures p type buried layer 9
The junction of p type buried layer 9 is located in N-type drift region 2 in curvature junction termination structures, and its principle is same as Example 1.
Claims (6)
1. a kind of junction termination structures of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone (1), N-type
Drift region (2), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-well areas (6), source electrode N+Contact zone (7), source
Pole P+Contact zone (8), p type buried layer (9)；P-well areas (6) are located at the upper strata of P type substrate (3), wherein P- with N-type drift region (2)
Well areas (6) are located at centre, and both sides are N-type drift region (2), and P-well areas (6) are connected with N-type drift region (2)；N-type is drifted about
The both sides away from P-well areas (6) are drain electrode N in area (2)+Contact zone (1), the surface of P-well areas (6) has and metallization source
Extremely connected source electrode N+Contact zone (7) and source electrode P+Contact zone (8), wherein source electrode P+Contact zone (8) is located at centre, source electrode N+Connect
Touch area (7) and be located at source electrode P+Contact zone (8) both sides；P type buried layer (9) is located in N-type drift region (2), in P-well areas (6) and N+
Between contact zone (1)；Source electrode N+It is grid oxygen above P-well areas (6) surface between contact zone (7) and N-type drift region (2)
It is grid polycrystalline silicon (4) to change above layer (5), the surface of gate oxide (5)；
The curvature junction termination structures include drain electrode N+Contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), gate oxide (5), P-well areas (6), source electrode P+Contact zone (8), p type buried layer (9)；P-well areas (6) surface is
Gate oxide (5), the surface of gate oxide (5) is grid polycrystalline silicon (4)；N in curvature junction termination structures+Contact zone
(1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide (5) and p type buried layer (9) respectively with straight line junction termination structures
N+Contact zone (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide (5) are connected with p type buried layer (9) and form ring
Shape structure；Wherein, the annular N in curvature junction termination structures+Contact zone (1) surrounds annular N-type drift region (2), curvature knot terminal
There are annular grid polysilicon (4) and annular gate oxide (5) in annular N-type drift region (2) in structure；With " straight line knot terminal
P-well areas (6) in structure are connected from N-type drift region (2) " unlike, the P-well areas (6) in curvature junction termination structures
It is not attached to N-type drift region (2) and each other away from for LP, LPSpecific span at a few micrometers between some tens of pm；
Characterized in that, N-type drift region (2) in N-type drift region (2) and straight line junction termination structures in the curvature junction termination structures
The end of junction N-type drift region (2) in the side of P-well areas (6), curvature junction termination structures has the first inclined-plane, institute
State the first inclined-plane to be connected with P-well areas (6), the first inclined-plane has ɑ degree angles with device crossline direction；The curvature knot terminal
In structure in p type buried layer (9) and straight line junction termination structures p type buried layer (9) junction close to the side of P-well areas (6), curvature
The end of p type buried layer (9) has the second inclined-plane in junction termination structures, and second inclined-plane is parallel with the first inclined-plane；ɑ degree angles
Specific span is 30 degree to 60 degree；Spacing between first inclined-plane and the second inclined-plane is b, b specific span
For 0 to 15 microns；The inwall of ring-shaped P type buried regions (9) in the curvature junction termination structures and the ring in curvature junction termination structures
The spacing of the junction of shape N-type drift region (2) and P type substrate (3) is a.
2. a kind of junction termination structures of horizontal high voltage power device according to claim 1, it is characterised in that the curvature
P type buried layer (9) outer wall is located in N-type drift region (2) with p type buried layer (9) outer wall in straight line junction termination structures in junction termination structures,
The inwall of ring-shaped P type buried regions (9) in the curvature junction termination structures and the annular N-type drift region in curvature junction termination structures
(2) and the spacing of junction of P type substrate (3) is a, a specific span is 0 to 15 microns.
3. a kind of junction termination structures of horizontal high voltage power device according to claim 2, it is characterised in that the straight line
The inwall of p type buried layer (9) is located in the N-type drift region (2) in curvature junction termination structures in junction termination structures.
4. a kind of junction termination structures of horizontal high voltage power device according to claim 2, it is characterised in that the straight line
The inwall of p type buried layer (9) is located in the P type substrate (3) in curvature junction termination structures in junction termination structures.
5. the junction termination structures of a kind of horizontal high voltage power device according to claim 3 or 4, it is characterised in that described
Second inclined-plane is located in the N-type drift region (2) in curvature junction termination structures.
6. the junction termination structures of a kind of horizontal high voltage power device according to claim 3 or 4, it is characterised in that described
Second inclined-plane is located in the P type substrate (3) in curvature junction termination structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542990.6A CN105047694B (en) | 2015-08-28 | 2015-08-28 | A kind of junction termination structures of horizontal high voltage power device |
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| US6168983B1 (en) * | 1996-11-05 | 2001-01-02 | Power Integrations, Inc. | Method of making a high-voltage transistor with multiple lateral conduction layers |
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