CN106129118B - The junction termination structures of lateral high voltage power device - Google Patents
The junction termination structures of lateral high voltage power device Download PDFInfo
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- CN106129118B CN106129118B CN201610727532.4A CN201610727532A CN106129118B CN 106129118 B CN106129118 B CN 106129118B CN 201610727532 A CN201610727532 A CN 201610727532A CN 106129118 B CN106129118 B CN 106129118B
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- 230000005684 electric field Effects 0.000 abstract description 12
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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Abstract
The present invention provides a kind of junction termination structures of lateral high voltage power device, including straight line junction termination structures and curvature junction termination structures；Curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide, the area P-well, source electrode P+Contact zone and annular isolation medium；Annular drain electrode N+Contact zone surrounds annular N-type drift region, and annular N-type drift region surrounds annular isolation medium, and the area P-well is isolated in annular isolation medium, and annular isolation medium is between the area P-well and N-type drift region, and the area P-well is not attached to N-type drift region and mutual spacing is LP, the problem of present invention improves straight line junction termination structures and curvature junction termination structures connected component charge unbalance and electric field curvature effects, avoid device from puncturing in advance, thus the breakdown voltage optimized.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of knot terminal knot of lateral high voltage power device
Structure.
Background technique
The development of high-voltage power integrated circuit be unable to do without the lateral high voltage power semiconductor device that can be integrated.Lateral high pressure function
Rate semiconductor devices is usually closing structure, including the structures such as round, racetrack and interdigitated.For the racetrack structure of closure
And interdigitated configuration, it will appear small curvature terminal in racetrack portion and tip portion, electric field line is easy to send out at small radius of curvature
It is raw to concentrate, avalanche breakdown occurs in advance at small radius of curvature so as to cause device, this is for lateral high voltage power device domain
Structure proposes new challenge.
The Chinese patent of Publication No. CN102244092A discloses a kind of junction termination structures of lateral high voltage power device,
Fig. 1 show the domain structure of device, and device terminal structure includes drain electrode N+Contact zone, N-type drift region, P type substrate, grid are more
Crystal silicon, gate oxide, the area P-well, source electrode N+, source electrode P+.Device architecture is divided into two parts, including straight line junction termination structures and song
Rate junction termination structures.In straight line junction termination structures, the area P-well is connected with N-type drift region, when drain electrode applies high voltage, P-
The PN junction metallurgy junction that the area well is constituted with N-type drift region starts to exhaust, and the depletion region of lightly doped n type drift region will mainly be held
Load pressure resistance, the PN junction metallurgy junction that peak electric field appears in the area P-well and N-type drift region is constituted.To solve highly doped P-
The power line height for the PN junction curvature metallurgy junction that the area well and lightly doped n type drift region are constituted is concentrated, and device is caused to shift to an earlier date
Occur avalanche breakdown the problem of, the patent use curvature junction termination structures as shown in Figure 1, the highly doped area P-well with gently mix
Miscellaneous P type substrate is connected, and P type substrate is lightly doped and is connected with lightly doped n type drift region, and the highly doped area P-well and lightly doped n type are floated
The distance for moving area is LP.When device drain adds high pressure, device source fingertips curvature is lightly doped P type substrate and N is lightly doped
Type drift region is connected, and instead of the PN junction metallurgy junction that the highly doped area P-well and lightly doped n type drift region are constituted, is lightly doped
P type substrate is that depletion region increases additional charge, has not only been effectively reduced due to the high electric field peak value at the highly doped area P-well, but also with
N-type drift region introduces new peak electric field.Since P type substrate and N-type drift region are all lightly doped, so in same bias voltage
Under the conditions of, peak electric field reduces at metallurgical junction.It is served as a contrast again due to the highly doped area P-well of device finger tip curvature with p-type is lightly doped
The contact at bottom increases the radius at p-type curvature terminal, alleviates the concentrations of electric field line, avoids device in source fingertips song
The breakdown in advance of rate part improves the breakdown voltage of device finger tip curvature.Meanwhile the junction termination structures that the patent is proposed
It is also applied in longitudinal super-junction structure device.However, the patent is under longitudinal super-junction structure device, to straight line junction termination structures and
The terminal structure of curvature junction termination structures connected component does not optimize, in connected component, due to the imbalance and electricity of charge
Field curvature effect will lead to power device and puncture in advance, therefore device pressure resistance is not optimal value.And for longitudinal super-junction structure
Device, the terminal structure of straight line junction termination structures and curvature junction termination structures connected component design complexity not only substantially
Degree improves, and reliability reduces.
Summary of the invention
The invention solves be exactly traditional devices charge unbalance and junction electric field curvature effect existing defects and
The problem of becoming increasingly complex the Terminal Design of the device of longitudinal super-junction structure with low reliability proposes a kind of lateral high pressure function
The junction termination structures of rate device.
For achieving the above object, the present invention adopts the following technical scheme:
A kind of junction termination structures of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, grid oxygen
Change floor, the area P-well, source electrode P+Contact zone and annular isolation medium；The area P-well surface is gate oxide, gate oxidation
The surface of layer is grid polycrystalline silicon；Drain electrode N in curvature junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon,
Gate oxide respectively with the drain electrode N in straight line junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, gate oxide phase
Connect and forms ring structure；Wherein, annular drain electrode N+Contact zone surrounds annular N-type drift region, and annular N-type drift region surrounds annular
The area P-well is isolated in spacer medium, annular isolation medium, there is annular grid polysilicon and annular gate oxide above the area P-well,
Annular isolation medium is between the area P-well and N-type drift region, and the area P-well is not attached to N-type drift region and mutual spacing
For LP, annular isolation medium is V in the depth of Z-directionP。
Annular N-type drift region surrounds annular isolation medium, and the area P-well is isolated in annular isolation medium, to make former straight line knot
Terminal and curvature knot terminal junction, are become being situated between by annular isolation from the PN curvature knot of low-doped P type substrate and N-type drift region
Matter is isolated with the medium of N-type drift region, so that the junction is not in the movement for having charge, the concentration for having prevented electric field line is caused
Device puncture in advance.
It is preferred that straight line junction termination structures are the structure of single RESURF, double RESURF, triple
RESURF structure is one such.
It is preferred that the straight line junction termination structures include: drain electrode N+Contact zone, N-type drift region, P type substrate, grid
Pole polysilicon, gate oxide, the area P-well, source electrode N+Contact zone, source electrode P+Contact zone；The area P-well and N-type drift region are located at P
The upper layer of type substrate, wherein the area P-well is located at centre, and both sides are N-type drift regions, and the area P-well is connected with N-type drift region；N
Two sides in type drift region far from the area P-well are drain electrode N+Contact zone, the surface in the area P-well has to be connected with metallizing source
Source electrode N+Contact zone and source electrode P+Contact zone, wherein source electrode P+Contact zone is located at centre, source electrode N+Contact zone is located at source electrode P+It connects
Touch area two sides；Source electrode N+It is gate oxide above the area P-well surface between contact zone and N-type drift region, gate oxide
It is grid polycrystalline silicon above surface.
It is preferred that the interface shape of the outer boundary of spacer medium and annular N-type drift region inner boundary is rectangular
Or it is arc-shaped.
It is preferred that depth V of the annular isolation medium in Z-directionPGreater than the junction depth of N-type drift region.To make song
The area P-well and N-type drift region in rate junction termination structures do not have connection relationship.
It is preferred that spacer medium all covers in the N-type drift region, the area P-well, annular isolation medium is in Y
Direction, which extends to, is filled up completely drain electrode N+Contact zone, to make device, there is no curvature knot terminal breakdown problems.
It is preferred that the groove depth V of spacer mediumPJunction depth less than N-type drift region and the knot greater than the area P-well
It is deep.At this moment the concentration of N-type drift region can be reduced, so as to improve the pressure resistance of device.
It is preferred that spacer medium is earth silicon material.
The invention has the benefit that the present invention not only Optimal improvements curvature knot of conventional interdigitated transversal device terminal
The problem of terminal punctures in advance also further passes through the terminal to straight line junction termination structures and curvature junction termination structures connected component
Structure is analyzed and is optimized, while the complexity of longitudinal super-junction terminal structure design greatly reduces, and improves reliability, changes
The problem of kind straight line junction termination structures and curvature junction termination structures connected component charge unbalance and electric field curvature effect, avoid device
Part punctures in advance, thus the breakdown voltage optimized.
Detailed description of the invention
Fig. 1 is the junction termination structures schematic diagram of traditional lateral high voltage power device；
Fig. 2 is the junction termination structures schematic diagram of lateral high voltage power device of the invention；
Fig. 3 is the diagrammatic cross-section of terminal structure of the invention in X-direction；
Fig. 4 (a)-Fig. 4 (c) is respectively depth V of the annular isolation medium in Z-directionPThe section of several situations of variation shows
It is intended to；
Fig. 4 (d) is that annular isolation medium extends to drain electrode N in the Y direction+The diagrammatic cross-section of contact zone 1；
Fig. 5 is the junction termination structures embodiment schematic diagram of lateral high voltage power device of the invention；
1 is drain electrode N+Contact zone, 2 be N-type drift region, and 3 be P type substrate, and 4 be grid polycrystalline silicon, and 5 be gate oxide, and 6 are
The area P-well, 7 be source electrode N+Contact zone, 8 be source electrode P+Contact zone, 9 be spacer medium.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
A kind of junction termination structures of transverse direction high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, the area P-well 6, source electrode P+Contact zone 8 and annular isolation medium 9；6 surface of the area P-well is gate oxidation
Layer 5, the surface of gate oxide 5 is grid polycrystalline silicon 4；Drain electrode N in curvature junction termination structures+Contact zone 1, N-type drift
Area 2, grid polycrystalline silicon 4, gate oxide 5 respectively with the drain electrode N in straight line junction termination structures+Contact zone 1, N-type drift region 2, grid
Pole polysilicon 4, gate oxide 5 are connected and form ring structure；Wherein, annular drain electrode N+Contact zone 1 surrounds annular N-type drift region
2, annular N-type drift region 2 surrounds annular isolation medium 9, and annular isolation medium 9 is isolated the area P-well 6, is had above the area P-well 6
Annular grid polysilicon 4 and annular gate oxide 5, annular isolation medium 9 are between the area P-well 6 and N-type drift region 2, P-
The area well 6 and N-type drift region 2 are not attached to and mutual spacing is LP, annular isolation medium 9 is V in the depth of Z-directionP。
The distance of annular isolation medium 9 in the Y direction can suitably shorten, so that chip area further decreases, save
Cost.
Annular N-type drift region 2 surrounds annular isolation medium 9, and the area P-well 6 is isolated in annular isolation medium 9, to make former straight
Knot terminal and curvature knot terminal junction are become from the PN curvature knot of low-doped P type substrate 3 and N-type drift region 2 by annular
Spacer medium 9 is isolated with the medium of N-type drift region 2, so that the junction has prevented electric field line there is no the movement of charge
Device caused by concentration punctures in advance.
The straight line junction termination structures include: drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, the area P-well 6, source electrode N+Contact zone 7, source electrode P+Contact zone 8；The area P-well 6 and N-type drift region 2 are located at p-type lining
The upper layer at bottom 3, wherein the area P-well 6 is located at centre, and both sides are N-type drift regions 2, and the area P-well 6 is connected with N-type drift region 2；
Two sides in N-type drift region 2 far from the area P-well 6 are drain electrode N+Contact zone 1, the surface in the area P-well 6 have and metallization source
Extremely connected source electrode N+Contact zone 7 and source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7
In source electrode P+8 two sides of contact zone；Source electrode N+It is gate oxidation above 6 surface of the area P-well between contact zone 7 and N-type drift region 2
Layer 5 is grid polycrystalline silicon 4 above the surface of gate oxide 5.
It is preferred that straight line junction termination structures are the structure of single RESURF, double RESURF, triple
RESURF structure is one such.
Distance L of fan-shaped 6 outer boundary of the area P-well to 2 inner boundary of annular N-type drift regionP(i.e. annular isolation medium 9 is in X
The isolation distance in direction) specific value can be according to will seek different values.
It is preferred that the interface shape of 2 inner boundary of the outer boundary of spacer medium 9 and annular N-type drift region is side
Shape is arc-shaped.
Fig. 4 (a), 4 (b), 4 (c) are respectively depth V of the annular isolation medium 9 in Z-directionPSeveral situations of variation,
In:
It in the depth of Z-direction is V that Fig. 4 (a), which is annular isolation medium 9,PLess than N-type drift region 2 junction depth and be greater than P-
The junction depth in the area well 6；
It in the depth of Z-direction is V that Fig. 4 (b), which is annular isolation medium 9,PEqual to N-type drift region 2 junction depth and be greater than P-
The junction depth in the area well 6；
Fig. 4 (c) annular isolation medium 9 is V in the depth of Z-directionPGreater than N-type drift region 2 junction depth and be greater than P-well
The junction depth in area 6；
Fig. 4 (d) is that annular isolation medium extends to drain electrode N in the Y direction+The diagrammatic cross-section of contact zone 1；
Depth V of the annular isolation medium 9 in Z-directionPGreater than the junction depth of N-type drift region 2, to make curvature junction termination structures
In the area P-well 6 and N-type drift region 2 do not have connection relationship.
Annular isolation medium extends to drain electrode N in the Y direction+Contact zone 1, spacer medium 9 is by the N-type drift region 2, P-
The area well 6 is isolated, to make device, there is no curvature knot terminal breakdown problems.
The groove depth V of spacer medium 9PJunction depth less than N-type drift region 2 and the junction depth greater than the area P-well 6.It at this moment can be with
The concentration of N-type drift region 2 is reduced, so as to improve the pressure resistance of device.
It is preferred that spacer medium 9 is earth silicon material.
The straight line junction termination structures and curvature junction termination structures junction, are isolated, so that original P- by spacer medium 9
By the L of 3 isolation distance of P type substrate between the area well 6 and N-type drift region 2PThe difficulty for no longer becoming a design, in this hair
Bright middle LPCan take different values according to demand apart from value.
The invention is not limited to the devices of longitudinal super-junction structure, other are had with the device of curvature junction termination structures
It is applicable in and obtains good result.
The working principle of the present embodiment are as follows: 2 inner boundary of N-type drift region and annular isolation medium 9 in curvature junction termination structures
Outer boundary connection, 6 outer boundary of the area P-well are connected with the inner boundary of annular isolation medium 9, N-type drift region 2 and the area P-well 6
It is isolated around annular isolation medium 9 without being directly connected to, straight line junction termination structures are isolated with curvature junction termination structures
Distance is LP, then no longer there is unbalanced charge in this isolated area, and then will not generate the concentration of electric field line, prevent curvature
Device caused by knot shifts to an earlier date breakdown problem.In straight line junction termination structures and curvature junction termination structures connected component, charge is uneven
The problem of weighing apparatus, is improved, to obtain more optimized breakdown voltage, while conventional substrate terminal technology greatly reduces
Design difficulty also further reduces chip area, reduces costs.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (6)
1. a kind of junction termination structures of transverse direction high voltage power device, it is characterised in that: including straight line junction termination structures and curvature knot
Terminal structure；
The curvature junction termination structures include drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide,
The area P-well, source electrode P+Contact zone and annular isolation medium；The area P-well surface is gate oxide, the table of gate oxide
It is grid polycrystalline silicon above face；Drain electrode N in curvature junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, gate oxidation
Layer respectively with the drain electrode N in straight line junction termination structures+Contact zone, N-type drift region, grid polycrystalline silicon, gate oxide is connected and shape
Circularize structure；Wherein, annular drain electrode N+Contact zone surrounds annular N-type drift region, and annular N-type drift region surrounds annular isolation and is situated between
The area P-well is isolated in matter, annular isolation medium, there is annular grid polysilicon and annular gate oxide above the area P-well, annular every
It is between the area P-well and N-type drift region from medium, the area P-well is not attached to N-type drift region and mutual spacing is LP,
Annular isolation medium is V in the depth of Z-directionP, depth V of the annular isolation medium in Z-directionPGreater than the junction depth of N-type drift region.
2. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: straight line knot terminal knot
Structure is that structure, double RESURF, triple the RESURF structure of single RESURF is one such.
3. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: the straight line knot is whole
End structure includes: drain electrode N+Contact zone, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide, the area P-well, source electrode N+
Contact zone, source electrode P+Contact zone；The area P-well and N-type drift region are located at the upper layer of P type substrate, during wherein the area P-well is located at
Between, both sides are N-type drift regions, and the area P-well is connected with N-type drift region；Two sides in N-type drift region far from the area P-well are
Drain N+Contact zone, the surface in the area P-well have the source electrode N being connected with metallizing source+Contact zone and source electrode P+Contact zone,
Middle source electrode P+Contact zone is located at centre, source electrode N+Contact zone is located at source electrode P+Contact zone two sides；Source electrode N+Contact zone and N-type are drifted about
It is gate oxide above the area P-well surface between area, is grid polycrystalline silicon above the surface of gate oxide.
4. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: outside spacer medium
The interface shape of boundary and annular N-type drift region inner boundary is rectangular or arc-shaped.
5. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: spacer medium is by institute
State N-type drift region, P-well separate from.
6. the junction termination structures of transverse direction high voltage power device according to claim 1, it is characterised in that: spacer medium two
Silica material.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979897A (en) * | 2005-12-09 | 2007-06-13 | Atmel德国有限公司 | DMOS transistor with optimized periphery structure |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
| CN103165657A (en) * | 2013-03-13 | 2013-06-19 | 电子科技大学 | Junction terminal structure of transverse high voltage power semiconductor device |
| CN103904124A (en) * | 2014-04-10 | 2014-07-02 | 电子科技大学 | SOI groove type LDMOS device with U-shaped extension gate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979897A (en) * | 2005-12-09 | 2007-06-13 | Atmel德国有限公司 | DMOS transistor with optimized periphery structure |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
| CN103165657A (en) * | 2013-03-13 | 2013-06-19 | 电子科技大学 | Junction terminal structure of transverse high voltage power semiconductor device |
| CN103904124A (en) * | 2014-04-10 | 2014-07-02 | 电子科技大学 | SOI groove type LDMOS device with U-shaped extension gate |
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