CN105206658B - A kind of junction termination structures of horizontal high voltage power device - Google Patents
A kind of junction termination structures of horizontal high voltage power device Download PDFInfo
- Publication number
- CN105206658B CN105206658B CN201510542455.0A CN201510542455A CN105206658B CN 105206658 B CN105206658 B CN 105206658B CN 201510542455 A CN201510542455 A CN 201510542455A CN 105206658 B CN105206658 B CN 105206658B
- Authority
- CN
- China
- Prior art keywords
- termination structures
- junction termination
- type
- curvature
- drift region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 42
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 241001212149 Cathetus Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention belongs to technical field of semiconductors, and in particular to a kind of junction termination structures of horizontal high voltage power device.The structure of the present invention, N-type drift region 2 in curvature junction termination structures, p type buried layer 9 and the inwall of n-type doping layer 10 are extended to and N-type drift region 2 in direct junction termination structures to centre respectively, p type buried layer 9 and the connection of the inwall of n-type doping layer 10, bearing of trend is circular arc path, can so alleviate junction electric field curvature effect.Secondly, by p type buried layer 9 beyond some distances of N-type drift region 2, p type buried layer is 3 microns also beyond n-type doping layer 10, improves charge unbalance.Beneficial effects of the present invention are to improve straight line and the junction termination structures connected component charge unbalance and electric field curvature effect of curvature, it is to avoid punctured in advance, with the breakdown voltage optimized.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of knot terminal knot of horizontal high voltage power device
Structure.
Background technology
The development of high-voltage power integrated circuit be unable to do without horizontal high voltage power semiconductor device that can be integrated.Horizontal high pressure work(
Rate semiconductor devices is usually closing structure, including the structure such as circular, racetrack and interdigitated.For the racetrack structure of closure
And interdigitated configuration, small curvature terminal occurs in racetrack portion and tip portion, electric field line is easily sent out at small radius of curvature
Raw to concentrate, so as to cause device that avalanche breakdown occurs in advance at small radius of curvature, this is for horizontal high voltage power device domain
Structure proposes new challenge.
Publication No. CN102244092A Chinese patent discloses a kind of junction termination structures of horizontal high voltage power device,
As shown in figure 1, device terminal structure includes drain electrode N+1st, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5,
P-well areas 6, source electrode N+7th, source electrode P+8.Device architecture is divided into two parts, including straight line junction termination structures and curvature knot terminal knot
Structure.In straight line junction termination structures, P-well areas 6 are connected with N-type drift region 2, when drain electrode applies high voltage, P-well areas 6 and N
The metallurgical junction of PN junction that type drift region 2 is constituted starts to exhaust, and the depletion region of lightly doped n type drift region 2 will mainly undertake pressure-resistant,
The metallurgical junction of PN junction that peak electric field appears in P-well areas 6 with N-type drift region 2 is constituted.To solve highly doped P-well areas 6
The power line height of the metallurgical junction of PN junction curvature constituted with lightly doped n type drift region 2 is concentrated, and causes device to avenge in advance
The problem of puncturing is collapsed, patent employs curvature junction termination structures as shown in Figure 1, and highly doped P-well areas 6 are with being lightly doped p-type lining
Bottom 3 is connected, and P type substrate 3 is lightly doped and is connected with lightly doped n type drift region 2, highly doped P-well areas 6 and lightly doped n type drift region
2 distance is LP.When device drain adds high pressure, P type substrate 3 and lightly doped n type is lightly doped in device source fingertips curvature
Drift region 2 is connected, and instead of highly doped P-well areas 6 and the metallurgical junction of the PN junction that lightly doped n type drift region 2 is constituted, gently mixes
Miscellaneous P type substrate 3 is that depletion region increases additional charge, has both been effectively reduced due to the high electric field peak value at highly doped P-well areas 6,
Again new peak electric field is introduced with N-type drift region 2.Because P type substrate 3 and N-type drift region 2 are all lightly doped, so equal
Under bias voltage conditions, peak electric field is reduced at metallurgical junction.Again due to the highly doped P-well areas 6 of device finger tip curvature and gently
The contact of doped p-type substrate 3 increases the radius at p-type curvature terminal, alleviates the concentrations of electric field line, it is to avoid device exists
Puncturing in advance for source fingertips curvature, improves the breakdown voltage of device finger tip curvature.Meanwhile, what the patent was proposed
Junction termination structures are also applied in longitudinal super-junction structure device.Fig. 2 is that N-type drift region 2 is vertical in device straight line junction termination structures
To the device profile schematic diagram of super-junction structure；Fig. 3 is that N-type drift region 2 is longitudinal super-junction structure in device curvature junction termination structures
Device profile schematic diagram.However, the patent is under longitudinal super-junction structure device, to straight line junction termination structures and curvature knot terminal
The terminal structure of structure connected component is not optimized, in connected component, due to the imbalance and electric field curvature effect of electric charge,
Power device can be caused to puncture in advance, therefore it is not optimal value that device is pressure-resistant.
The content of the invention
It is to be solved by this invention, aiming at lacking for traditional devices charge unbalance and junction electric field curvature effect
Fall into, propose a kind of junction termination structures of horizontal high voltage power device.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of junction termination structures of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone 1,
N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone
8th, p type buried layer 9, n-type doping layer 10；P-well areas 6 are located at the upper strata of P type substrate 3, wherein P-well areas 6 with N-type drift region 2
Positioned at centre, both sides are N-type drift regions 2, and P-well areas 6 are connected with N-type drift region 2；Away from P-well in N-type drift region 2
The both sides in area 6 are drain electrode N+Contact zone 1, the surface in P-well areas 6 has the source electrode N being connected with metallizing source+The He of contact zone 7
Source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；P-type
Buried regions 9 is located in N-type drift region 2, in P-well areas 6 and N+Between contact zone 1；N-type doping layer 10 is located in N-type drift region 2,
On the surface of N-type drift region 2 and the top of p type buried layer 9, in P-well areas 6 and N+Between contact zone 1；Source electrode N+Contact zone 7 and N
It above gate oxide 5, the surface of gate oxide 5 is gate polycrystalline to be above the surface of P-well areas 6 between type drift region 2
Silicon 4.
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8, p type buried layer 9, n-type doping layer 10；The surface of P-well areas 6 is grid
Oxide layer 5, the surface of gate oxide 5 is grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift
Area 2, grid polycrystalline silicon 4, gate oxide 5, p type buried layer 9 and n-type doping layer 10 respectively with the N in straight line junction termination structures+Contact
Area 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5, p type buried layer 9 are connected with n-type doping layer 10 and form loop configuration；
Wherein, the annular N in curvature junction termination structures+The annular that contact zone 1 is surrounded in annular N-type drift region 2, curvature junction termination structures
There are annular grid polysilicon 4 and annular gate oxide 5 in N-type drift region 2；With " P-well areas 6 in straight line junction termination structures with
N-type drift region 2 is connected " unlike, P-well areas 6 in curvature junction termination structures are not attached to and each other with N-type drift region 2
Away from for LP, LPSpecific span at a few micrometers between some tens of pm；
Characterized in that, P type substrate 3 in N-type drift region 2 and curvature junction termination structures in the straight line junction termination structures
Joint face is the first S type curved surfaces, and the first S types curved surface is made up of the first arc surface, first level face and the second arc surface；The
The inwall of N-type drift region 2 in one end connection curvature junction termination structures of one arc surface, its other end is followed by by first level face
One end of second arc surface；Another termination P-well areas 6 of second arc surface；The first level face and straight line junction termination structures
Parallel with the joint face of curvature junction termination structures, its length is e；First arc surface is the quadrant that radius is r2
Arc, its opening direction is towards curvature junction termination structures；Second arc surface is the quarter circular arc that radius is r1, and it is open
Direction is towards straight line junction termination structures；
The joint face of P type substrate 3 is the 2nd S in p type buried layer 9 and curvature junction termination structures in the straight line junction termination structures
Type curved surface, the first S types curved surface is made up of three-arc face, the second horizontal plane and the 4th arc surface；The one of three-arc face
The inwall of p type buried layer 9 in end connection curvature junction termination structures, its other end is followed by the one of the 4th arc surface by the second horizontal plane
End；Another termination P-well areas 6 of 4th arc surface；Second horizontal plane and straight line junction termination structures and curvature knot terminal knot
The joint face of structure is parallel, and its length is e；The three-arc face is the quarter circular arc that radius is r2, its opening direction face
To curvature junction termination structures；4th arc surface is the quarter circular arc that radius is r1, and its opening direction is towards straight line knot
Terminal structure；
The joint face of P type substrate 3 is the in n-type doping layer 10 and curvature junction termination structures in the straight line junction termination structures
Three S type curved surfaces, the 3rd S types curved surface is made up of the 5th arc surface, the 3rd horizontal plane and the 6th arc surface；5th arc surface
The inwall of n-type doping layer 10 in one end connection curvature junction termination structures, its other end is followed by the 6th circular arc by the 3rd horizontal plane
The one end in face；The inwall of n-type doping layer 10 in another termination straight line junction termination structures of 6th arc surface；3rd horizontal plane
Parallel with the joint face of straight line junction termination structures and curvature junction termination structures, its length is e；5th arc surface is that radius is
R2 quarter circular arc, its opening direction is towards curvature junction termination structures；
Wherein, e, r1, r2 span are 0 micron to Lp microns, and r2+e+r1=Lp.
The total technical scheme of the present invention, in straight line junction termination structures and curvature junction termination structures connected component, curvature knot is whole
The inwall of N-type drift region 2 is extended to centre and is connected with the inwall of N-type drift region 2 in straight line junction termination structures in end structure, the song
The inwall of p type buried layer 9 is extended to centre and is connected with the inwall of p type buried layer 9 in straight line junction termination structures in rate junction termination structures, extension
Path uses circular arc path；Compared to traditional structure, connected in junction with circular arc path, can effectively alleviate junction electric field
Curvature effect.The vertical direction of bearing of trend in junction, has spacing between p type buried layer 9 and N-type drift region 2.In actual work
In skill, N-type drift region 2 is formed by ion implanting, and after annealing knot, N-type drift region 2 can be spread, and p type buried layer 9 is exceeded into N
Some distances of type drift region 2 so that the N-type drift region 2 spread out has p type impurity to exhaust；Meanwhile, according to different drift regions
Implantation dosage, n-type doping layer 10 and the inside and outside wall of p type buried layer also have spacing, can be under different drift region implantation dosages
So that impurity more easily reachs balance；So, in straight line junction termination structures and curvature junction termination structures connected component, electric charge is uneven
The problem of weighing apparatus, is improved, so that the breakdown voltage optimized.In such scheme, it should be appreciated that straight line knot is whole
The outer wall of p type buried layer 9 refers to that p type buried layer 9 is close to N+ in whole device in p type buried layer 9 and curvature junction termination structures in end structure
The side of contact zone 1, inwall refers to that p type buried layer 9 is close to the side of P type substrate 3 in whole device；The outer wall at other positions with it is interior
Wall is this implication.
Specifically, the outer wall of p type buried layer 9 in the outer wall of p type buried layer 9 and straight line junction termination structures in the curvature junction termination structures
In N-type drift region 2, in the inwall and curvature junction termination structures of the ring-shaped P type buried regions 9 in the curvature junction termination structures
The spacing of the junction of annular N-type drift region 2 and P type substrate 3 is a；In the curvature junction termination structures n-type doping layer 10 with it is straight
N-type doping layer 10 is located in p type buried layer 9 in knot terminal structure, between the inwall of n-type doping layer 10 and p type buried layer 9 inwall
Away from for c；C specific span is 0 to 10 microns；The spacing of the outer wall of n-type doping layer 10 and the outer wall of p type buried layer 9 is d；d
Specific span be 0 to 10 microns；The inwall of ring-shaped P type buried regions 9 in the straight line junction termination structures is whole with straight line knot
The spacing of the junction of N-type drift region 2 and P-well areas 6 in end structure is a；A specific span is 0 to 15 microns；
Distance of the corresponding center of circle of first arc surface center of circle corresponding with three-arc face along device longitudinal direction is b；Described
Distance of the corresponding center of circle of the two arc surfaces center of circle corresponding with the 4th arc surface along device longitudinal direction is b, the 4th circular arc
Face is the quarter circular arc that radius is r2, and its opening direction is towards curvature junction termination structures；The three-arc face is corresponding
Distance of the center of circle center of circle corresponding with the 5th arc surface along device longitudinal direction is b, the corresponding center of circle of the 4th arc surface with
Distance of the corresponding center of circle of 6th arc surface along device longitudinal direction is b, the 6th arc surface be that radius is r2 four/
One circular arc, its opening direction is towards curvature junction termination structures；B specific span is 0 to 15 microns.
Specifically, the inwall of p type buried layer 9 is located at the N-type drift in curvature junction termination structures in the curvature junction termination structures
Move in area 2, the inwall of n-type doping layer 10 is located in p type buried layer 9 in the curvature junction termination structures.
Specifically, in the straight line junction termination structures in p type buried layer 9 and curvature junction termination structures p type buried layer 9 junction
In N-type drift region 2, itself and N-type drift region 2 in N-type drift region 2 in straight line junction termination structures and curvature junction termination structures
The spacing of junction is b；B specific span is 0 to 15 microns.
Specifically, in the straight line junction termination structures in p type buried layer 9 and curvature junction termination structures p type buried layer 9 junction
In P type substrate 3, its company with N-type drift region 2 in N-type drift region 2 in straight line junction termination structures and curvature junction termination structures
The spacing for meeting place is b；B specific span is 0 to 15 microns.
Specifically, the outer wall of p type buried layer 9 in the outer wall of p type buried layer 9 and straight line junction termination structures in the curvature junction termination structures
In N-type drift region 2, in the inwall and curvature junction termination structures of the ring-shaped P type buried regions 9 in the curvature junction termination structures
The spacing of the junction of annular N-type drift region 2 and P type substrate 3 is a；Ring-shaped P type buried regions 9 in the curvature junction termination structures
Inwall be located at curvature junction termination structures in P type substrate 3 in；N-type doping layer 10 and straight line in the curvature junction termination structures
N-type doping layer 10 is located in p type buried layer 9 in junction termination structures, the spacing of the inwall of n-type doping layer 10 and the inwall of p type buried layer 9
For c；C specific span is 0 to 10 microns；The spacing of the outer wall of n-type doping layer 10 and the outer wall of p type buried layer 9 is d；D's
Specific span is 0 to 10 microns；The inwall of p type buried layer 9 in the straight line junction termination structures and straight line junction termination structures
In P-well areas 6 connect；In the inwall and straight line junction termination structures of n-type doping layer 10 in the straight line junction termination structures
P-well areas 6 are connected；The corresponding center of circle of first arc surface center of circle corresponding with three-arc face is along device longitudinal direction
Distance is b；Distance of the corresponding center of circle of second arc surface center of circle corresponding with the 4th arc surface along device longitudinal direction be
B, the 4th arc surface is the circular arc that radius is r1, and its opening direction is towards curvature junction termination structures；The three-arc face
Distance of the corresponding center of circle center of circle corresponding with the 5th arc surface along device longitudinal direction is b, and the 4th arc surface is corresponding
Distance of the center of circle center of circle corresponding with the 6th arc surface along device longitudinal direction is b, and the 6th arc surface is that radius is r1's
Quarter circular arc, its opening direction is towards curvature junction termination structures；B specific span is 0 to 15 microns.
Specifically, in the straight line junction termination structures in p type buried layer 9 and curvature junction termination structures p type buried layer 9 junction
In the N-type drift region 2 in straight line junction termination structures, itself and N-type drift region 2 in straight line junction termination structures and curvature knot terminal
The spacing of the junction of N-type drift region 2 is b in structure；B specific span is 0 to 15 microns.
Specifically, in the straight line junction termination structures in p type buried layer 9 and curvature junction termination structures p type buried layer 9 junction
In the P type substrate 3 in curvature junction termination structures, itself and N-type drift region 2 in straight line junction termination structures and curvature knot terminal knot
The spacing of the junction of N-type drift region 2 is b in structure；B specific span is 0 to 15 microns.
Beneficial effects of the present invention are that the present invention is by straight line junction termination structures and curvature junction termination structures connected component
Terminal structure analyzed and optimized, improve straight line junction termination structures and curvature junction termination structures connected component charge unbalance
The problem of with electric field curvature effect, it is to avoid device punctures in advance, so that the breakdown voltage optimized.
Brief description of the drawings
Fig. 1 is the junction termination structures schematic diagram of traditional horizontal high voltage power semiconductor device；
Fig. 2 is the device profile signal that N-type drift region 2 is longitudinal super-junction structure in traditional device straight line junction termination structures
Figure；
Fig. 3 is the device profile signal that N-type drift region 2 is longitudinal super-junction structure in traditional device curvature junction termination structures
Figure；
Fig. 4 is the junction termination structures schematic diagram of the horizontal high voltage power device of the present invention；
Fig. 5 is the structural representation of embodiment 1；
Fig. 6 is the structural representation of embodiment 2；
Fig. 7 is the structural representation of embodiment 3；
Fig. 8 is the structural representation of embodiment 4.
Embodiment
With reference to the accompanying drawings and examples, technical scheme is described in detail：
A kind of junction termination structures of horizontal high voltage power device of the present invention, including straight line junction termination structures and curvature knot end
End structure；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone 1,
N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone
8th, p type buried layer 9, n-type doping layer 10；P-well areas 6 are located at the upper strata of P type substrate 3, wherein P-well areas 6 with N-type drift region 2
Positioned at centre, both sides are N-type drift regions 2, and P-well areas 6 are connected with N-type drift region 2；Away from P-well in N-type drift region 2
The both sides in area 6 are drain electrode N+Contact zone 1, the surface in P-well areas 6 has the source electrode N being connected with metallizing source+The He of contact zone 7
Source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；P-type
Buried regions 9 is located in N-type drift region 2, in P-well areas 6 and N+Between contact zone 1；N-type doping layer 10 is located in N-type drift region 2,
On the surface of N-type drift region 2 and the top of p type buried layer 9, in P-well areas 6 and N+Between contact zone 1；Source electrode N+Contact zone 7 and N
It above gate oxide 5, the surface of gate oxide 5 is gate polycrystalline to be above the surface of P-well areas 6 between type drift region 2
Silicon 4.
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8, p type buried layer 9, n-type doping layer 10；The surface of P-well areas 6 is grid
Oxide layer 5, the surface of gate oxide 5 is grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift
Area 2, grid polycrystalline silicon 4, gate oxide 5, p type buried layer 9 and n-type doping layer 10 respectively with the N in straight line junction termination structures+Contact
Area 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5, p type buried layer 9 are connected with n-type doping layer 10 and form loop configuration；
Wherein, the annular N in curvature junction termination structures+The annular that contact zone 1 is surrounded in annular N-type drift region 2, curvature junction termination structures
There are annular grid polysilicon 4 and annular gate oxide 5 in N-type drift region 2；With " P-well areas 6 in straight line junction termination structures with
N-type drift region 2 is connected " unlike, P-well areas 6 in curvature junction termination structures are not attached to and each other with N-type drift region 2
Away from for LP, LPSpecific span at a few micrometers between some tens of pm；
Characterized in that, P type substrate 3 in N-type drift region 2 and curvature junction termination structures in the straight line junction termination structures
Joint face is the first S type curved surfaces, and the first S types curved surface is made up of the first arc surface, first level face and the second arc surface；The
The inwall of N-type drift region 2 in one end connection curvature junction termination structures of one arc surface, its other end is followed by by first level face
One end of second arc surface；Another termination P-well areas 6 of second arc surface；The first level face and straight line junction termination structures
Parallel with the joint face of curvature junction termination structures, its length is e；First arc surface is the quadrant that radius is r2
Arc, its opening direction is towards curvature junction termination structures；Second arc surface is the quarter circular arc that radius is r1, and it is open
Direction is towards straight line junction termination structures；
The joint face of P type substrate 3 is the 2nd S in p type buried layer 9 and curvature junction termination structures in the straight line junction termination structures
Type curved surface, the first S types curved surface is made up of three-arc face, the second horizontal plane and the 4th arc surface；The one of three-arc face
The inwall of p type buried layer 9 in end connection curvature junction termination structures, its other end is followed by the one of the 4th arc surface by the second horizontal plane
End；Another termination P-well areas 6 of 4th arc surface；Second horizontal plane and straight line junction termination structures and curvature knot terminal knot
The joint face of structure is parallel, and its length is e；The three-arc face is the quarter circular arc that radius is r2, its opening direction face
To curvature junction termination structures；4th arc surface is the quarter circular arc that radius is r1, and its opening direction is towards straight line knot
Terminal structure；
The joint face of P type substrate 3 is the in n-type doping layer 2 and curvature junction termination structures in the straight line junction termination structures
Three S type curved surfaces, the 3rd S types curved surface is made up of the 5th arc surface, the 3rd horizontal plane and the 6th arc surface；5th arc surface
The inwall of n-type doping layer 2 in one end connection curvature junction termination structures, its other end is followed by the 6th arc surface by the 3rd horizontal plane
One end；Another termination P-well areas 6 of 6th arc surface；3rd horizontal plane and straight line junction termination structures and curvature knot are whole
The joint face of end structure is parallel, and its length is e；5th arc surface is the quarter circular arc that radius is r2, its openings
To towards curvature junction termination structures；6th arc surface is the quarter circular arc that radius is r1, and its opening direction is towards straight
Knot terminal structure；
Wherein, e, r1, r2 span are 0 micron to Lp microns, and r2+e+r1=Lp.
Embodiment 1：
As shown in figure 5, the structure of this example is to include straight line junction termination structures and curvature junction termination structures；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone 1,
N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone
8th, p type buried layer 9, n-type doping layer 10；P-well areas 6 are located at the upper strata of P type substrate 3, wherein P-well areas 6 with N-type drift region 2
Positioned at centre, both sides are N-type drift regions 2, and P-well areas 6 are connected with N-type drift region 2；Away from P-well in N-type drift region 2
The both sides in area 6 are drain electrode N+Contact zone 1, the surface in P-well areas 6 has the source electrode N being connected with metallizing source+The He of contact zone 7
Source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；P-type
Buried regions 9 is located in N-type drift region 2, in P-well areas 6 and N+Between contact zone 1；N-type doping layer 10 is located in N-type drift region 2,
On the surface of N-type drift region 2 and the top of p type buried layer 9, in P-well areas 6 and N+Between contact zone 1；Source electrode N+Contact zone 7 and N
It above gate oxide 5, the surface of gate oxide 5 is gate polycrystalline to be above the surface of P-well areas 6 between type drift region 2
Silicon 4.
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8, p type buried layer 9, n-type doping layer 10；The surface of P-well areas 6 is grid
Oxide layer 5, the surface of gate oxide 5 is grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift
Area 2, grid polycrystalline silicon 4, gate oxide 5, p type buried layer 9 and n-type doping layer 10 respectively with the N in straight line junction termination structures+Contact
Area 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5, p type buried layer 9 are connected with n-type doping layer 10 and form loop configuration；
Wherein, the annular N in curvature junction termination structures+The annular that contact zone 1 is surrounded in annular N-type drift region 2, curvature junction termination structures
There are annular grid polysilicon 4 and annular gate oxide 5 in N-type drift region 2；With " P-well areas 6 in straight line junction termination structures with
N-type drift region 2 is connected " unlike, P-well areas 6 in curvature junction termination structures are not attached to and each other with N-type drift region 2
Away from for LP, LPSpecific span at a few micrometers between some tens of pm；
The inwall of N-type drift region 2 is extended to centre and floated with N-type in straight line junction termination structures in the curvature junction termination structures
The connection of the inwall of area 2 is moved, extension path first carries out radius counterclockwise and is r2 quadrant, then enters the straight line that row distance is e, most
The quadrant that radius counterclockwise is r1 is carried out afterwards；R2+e+r1=Lp condition is met, under Lp=30 microns, r2=10
Micron, e=10 microns, r1=10 microns.The inwall of p type buried layer 9 and P in straight line junction termination structures in the curvature junction termination structures
The inwall of type buried regions 9 is located in N-type drift region 2, and the inwall of p type buried layer 9 is extended to and straight line knot to centre in curvature junction termination structures
The inwall of p type buried layer 9 is connected in terminal structure, and extension path first carries out radius counterclockwise and is r2 quadrant, then enters line-spacing
From the straight line for e, the quadrant that radius counterclockwise is r1 is finally carried out；R2+e+r1=Lp condition is met, in Lp=30
Under micron, r2=10 microns, e=10 microns, r1=10 microns.Ring-shaped P type buried regions 9 in the curvature junction termination structures it is interior
Wall is a with the annular N-type drift region 2 and the spacing of the junction of P type substrate 3 in curvature junction termination structures；The straight line knot is whole
The inwall of ring-shaped P type buried regions 9 in end structure and the annular N-type drift region 2 in straight line junction termination structures and the company of P type substrate 3
The spacing for meeting place is a；A is 5 microns.P type buried layer 9 in p type buried layer 9 and curvature junction termination structures in the straight line junction termination structures
Junction be located at P type substrate 3 in；The correspondence circular arc center of circle is corresponding with the extension path of p type buried layer 9 in the extension path of N-type drift region 2
The distance of the circular arc center of circle in the Y direction is b, and b is 5 microns.P type buried layer 9 and curvature knot terminal knot in the straight line junction termination structures
The outer wall of p type buried layer 9 and n-type doping layer 10 in n-type doping layer 10 in straight line junction termination structures and curvature junction termination structures in structure
Outer wall spacing be d, d be 3 microns；P-type is buried in p type buried layer 9 and curvature junction termination structures in the straight line junction termination structures
In the inwall and straight line junction termination structures of layer 9 in n-type doping layer 10 and curvature junction termination structures between the inwall of n-type doping layer 10
Away from for c, c is 3 microns.
The operation principle of this example is：The inwall of N-type drift region 2 extends to whole with straight line knot to centre in curvature junction termination structures
The inwall of N-type drift region 2 is connected in end structure, and the inwall of p type buried layer 9 is extended to and straight line to centre in the curvature junction termination structures
The inwall of p type buried layer 9 is connected in junction termination structures, and extension path is with circular sliding slopes；So, compared to traditional structure, in junction
With circular arc path, it can effectively alleviate the curvature effect of junction electric field.Straight line junction termination structures and curvature junction termination structures phase
Company part, the vertical direction of bearing of trend in junction, p type buried layer 9 is beyond some distances of N-type drift region 2.In actual process
In, N-type drift region 2 is formed by ion implanting, and after annealing knot, N-type drift region 2 can be spread, and p type buried layer 9 is exceeded into N-type
Some distances of drift region 2 so that the N-type drift region 2 spread out has p type impurity to exhaust；Meanwhile, noted according to different drift regions
Enter dosage, n-type doping layer 10 and the inside and outside wall of p type buried layer also have spacing, can made under different drift region implantation dosages
Obtain impurity and more easily reach balance；So, in straight line junction termination structures and curvature junction termination structures connected component, charge unbalance
The problem of be improved so that the breakdown voltage more optimized.
Embodiment 2
As shown in fig. 6, this example place different from embodiment 1 is, the He of this example cathetus junction termination structures p type buried layer 9
The junction of p type buried layer 9 is located in N-type drift region 2 in curvature junction termination structures, and its principle is same as Example 1.
Embodiment 3
As shown in fig. 7, this example place different from embodiment 1 is, in straight line junction termination structures the inwall of p type buried layer 9 with
The inner wall position of N-type drift region 2 is overlapped in straight line junction termination structures, and the inwall of p type buried layer 9 is served as a contrast positioned at p-type in curvature junction termination structures
In bottom 3, the inwall of p type buried layer 9 is extended to and the inwall of p type buried layer 9 in straight line junction termination structures to centre in curvature junction termination structures
Connection, extension path first carries out radius counterclockwise and is r2 quadrant, then enters the straight line that row distance is e, finally carries out inverse
Hour hands radius makes it be connected with the inwall of p type buried layer 9 in straight line junction termination structures for r1 1/12nd circular arc；The curvature knot
The inwall of ring-shaped P type buried regions 9 in terminal structure and the annular N-type drift region 2 in curvature junction termination structures and P type substrate 3
The spacing of junction is a, and a specific span is 5 microns；Meet r2+e+r1=Lp condition, wherein Lp=30 microns, e
=10 microns, r1=10 microns, r2=10 microns.Its principle is same as Example 1.
Embodiment 4
As shown in figure 8, this example place different from embodiment 3 is, the He of this example cathetus junction termination structures p type buried layer 9
The junction of p type buried layer 9 is located in N-type drift region 2 in curvature junction termination structures, and its principle is same as Example 3.
In above-mentioned any scheme, the relative position of n-type doping layer 10 and p type buried layer 9 keeps fixing, i.e., when p type buried layer 9
It is located in inwall in N-type drift region 2, the inwall of n-type doping layer 10 also is located in N-type drift region 2, and the spacing between inwall is fixed
For c.
Claims (8)
1. a kind of junction termination structures of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
The straight line junction termination structures are identical with horizontal high voltage power device active area structure, including drain electrode N+Contact zone (1), N-type
Drift region (2), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-well areas (6), source electrode N+Contact zone (7), source
Pole P+Contact zone (8), p type buried layer (9), n-type doping layer (10)；P-well areas (6) are located at P type substrate with N-type drift region (2)
(3) upper strata, wherein P-well areas (6) are located at centre, and both sides are N-type drift region (2), and P-well areas (6) and N-type drift region
(2) it is connected；The both sides away from P-well areas (6) are drain electrode N in N-type drift region (2)+Contact zone (1), the table of P-well areas (6)
Face has the source electrode N being connected with metallizing source+Contact zone (7) and source electrode P+Contact zone (8), wherein source electrode P+Contact zone (8) position
In centre, source electrode N+Contact zone (7) is located at source electrode P+Contact zone (8) both sides；P type buried layer (9) is located in N-type drift region (2),
P-well areas (6) and N+Between contact zone (1)；N-type doping layer (10) is located in N-type drift region (2), in N-type drift region (2)
Surface and the top of p type buried layer (9), in P-well areas (6) and N+Between contact zone (1)；Source electrode N+Contact zone (7) drifts about with N-type
It above gate oxide (5), the surface of gate oxide (5) is that grid is more to be above P-well areas (6) surface between area (2)
Crystal silicon (4)；
The curvature junction termination structures include drain electrode N+Contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), gate oxide (5), P-well areas (6), source electrode P+Contact zone (8), p type buried layer (9), n-type doping layer (10)；P-well areas
(6) surface is gate oxide (5), and the surface of gate oxide (5) is grid polycrystalline silicon (4)；Curvature junction termination structures
In N+Contact zone (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide (5), p type buried layer (9) and n-type doping layer
(10) respectively with the N in straight line junction termination structures+Contact zone (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide
(5), p type buried layer (9) is connected with n-type doping layer (10) and forms loop configuration；Wherein, the annular N in curvature junction termination structures+
Contact zone (1), which is surrounded in the annular N-type drift region (2) in annular N-type drift region (2), curvature junction termination structures, annular grid
Polysilicon (4) and annular gate oxide (5)；With " P-well areas (6) and N-type drift region (2) phase in straight line junction termination structures
Unlike even ", P-well areas (6) in curvature junction termination structures are not attached to N-type drift region (2) and each other away from for LP, LP
Specific span at a few micrometers between some tens of pm；
Characterized in that, P type substrate (3) in N-type drift region (2) and curvature junction termination structures in the straight line junction termination structures
Joint face is the first S type curved surfaces, and the first S types curved surface is made up of the first arc surface, first level face and the second arc surface；The
The inwall of N-type drift region (2) in one end connection curvature junction termination structures of one arc surface, after its other end is by first level face
Connect one end of the second arc surface；Another termination P-well areas (6) of second arc surface；The first level face and straight line knot terminal
Structure is parallel with the joint face of curvature junction termination structures, and its length is e；First arc surface is a quarter that radius is r2
Circular arc, its opening direction is towards curvature junction termination structures；Second arc surface is the quarter circular arc that radius is r1, and it is opened
Mouthful direction is towards straight line junction termination structures；
The joint face of P type substrate (3) is the 2nd S in p type buried layer (9) and curvature junction termination structures in the straight line junction termination structures
Type curved surface, the first S types curved surface is made up of three-arc face, the second horizontal plane and the 4th arc surface；The one of three-arc face
The inwall of p type buried layer (9) in end connection curvature junction termination structures, its other end is followed by the 4th arc surface by the second horizontal plane
One end；The inwall of p type buried layer (9) in the other end straight line junction termination structures of 4th arc surface, second horizontal plane and straight line
Junction termination structures are parallel with the joint face of curvature junction termination structures, and its length is e；The three-arc face is four that radius is r2
/ mono- circular arc, its opening direction is towards curvature junction termination structures；
The joint face of P type substrate (3) is the in n-type doping layer (10) and curvature junction termination structures in the straight line junction termination structures
Three S type curved surfaces, the 3rd S types curved surface is made up of the 5th arc surface, the 3rd horizontal plane and the 6th arc surface；5th arc surface
The inwall of n-type doping layer (10) in one end connection curvature junction termination structures, its other end is followed by the 6th circle by the 3rd horizontal plane
One end of cambered surface；The inwall of n-type doping layer (10) in another termination straight line junction termination structures of 6th arc surface；3rd water
Plane is parallel with the joint face of straight line junction termination structures and curvature junction termination structures, and its length is e；5th arc surface is half
Footpath is r2 quarter circular arc, and its opening direction is towards curvature junction termination structures；
Wherein, e, r1, r2 span are 0-Lp, and r2+e+r1=Lp.
2. a kind of junction termination structures of horizontal high voltage power device according to claim 1, it is characterised in that the curvature
P type buried layer (9) outer wall is located in N-type drift region (2) with p type buried layer (9) outer wall in straight line junction termination structures in junction termination structures,
The inwall of ring-shaped P type buried regions (9) in the curvature junction termination structures and the annular N-type drift region in curvature junction termination structures
(2) and P type substrate (3) junction spacing be a；N-type doping layer (10) and straight line knot are whole in the curvature junction termination structures
N-type doping layer (10) is located in p type buried layer (9) in end structure, n-type doping layer (10) inwall and p type buried layer (9) inwall
Spacing is c；C specific span is 0 to 10 microns；Between n-type doping layer (10) outer wall and p type buried layer (9) outer wall
Away from for d；D specific span is 0 to 10 microns；The inwall of ring-shaped P type buried regions (9) in the straight line junction termination structures with
The spacing of the junction of N-type drift region (2) and P-well areas (6) in straight line junction termination structures is a；A specific span
For 0 to 15 microns；The corresponding center of circle of first arc surface center of circle corresponding with three-arc face along device longitudinal direction away from
From for b；Distance of the corresponding center of circle of second arc surface center of circle corresponding with the 4th arc surface along device longitudinal direction is b,
4th arc surface is the quarter circular arc that radius is r2, and its opening direction is towards curvature junction termination structures；Described 3rd
Distance of the corresponding center of circle of the arc surface center of circle corresponding with the 5th arc surface along device longitudinal direction is b, the 4th arc surface
Distance of the corresponding center of circle center of circle corresponding with the 6th arc surface along device longitudinal direction is b, and the 6th arc surface is radius
For r2 quarter circular arc, its opening direction is towards curvature junction termination structures；B specific span is 0 to 15 microns.
3. a kind of junction termination structures of horizontal high voltage power device according to claim 2, it is characterised in that the curvature
The inwall of p type buried layer (9) is located in the N-type drift region (2) in curvature junction termination structures in junction termination structures, and the curvature knot is whole
The inwall of n-type doping layer (10) is located in p type buried layer (9) in end structure.
4. a kind of junction termination structures of horizontal high voltage power device according to claim 3, it is characterised in that the straight line
The junction of p type buried layer (9) is located in N-type drift region (2) in p type buried layer (9) and curvature junction termination structures in junction termination structures,
Its spacing with the junction of N-type drift region (2) in N-type drift region (2) in straight line junction termination structures and curvature junction termination structures
For b；B specific span is 0 to 15 microns.
5. a kind of junction termination structures of horizontal high voltage power device according to claim 3, it is characterised in that the straight line
The junction of p type buried layer (9) is located in P type substrate (3) in p type buried layer (9) and curvature junction termination structures in junction termination structures, its
Spacing with the junction of N-type drift region (2) in N-type drift region (2) in straight line junction termination structures and curvature junction termination structures is
b；B specific span is 0 to 15 microns.
6. a kind of junction termination structures of horizontal high voltage power device according to claim 1, it is characterised in that the curvature
P type buried layer (9) outer wall is located in N-type drift region (2) with p type buried layer (9) outer wall in straight line junction termination structures in junction termination structures,
The inwall of ring-shaped P type buried regions (9) in the curvature junction termination structures and the annular N-type drift region in curvature junction termination structures
(2) and P type substrate (3) junction spacing be a；The inwall position of ring-shaped P type buried regions (9) in the curvature junction termination structures
In P type substrate (3) in curvature junction termination structures；N-type doping layer (10) and straight line knot are whole in the curvature junction termination structures
N-type doping layer (10) is located in p type buried layer (9) in end structure, n-type doping layer (10) inwall and p type buried layer (9) inwall
Spacing is c；C specific span is 0 to 10 microns；Between n-type doping layer (10) outer wall and p type buried layer (9) outer wall
Away from for d；D specific span is 0 to 10 microns；The inwall and straight line of p type buried layer (9) in the straight line junction termination structures
P-well areas (6) connection in junction termination structures；The inwall and straight line of n-type doping layer (10) in the straight line junction termination structures
P-well areas (6) connection in junction termination structures；The corresponding center of circle of first arc surface center of circle corresponding with three-arc face
It is b along the distance of device longitudinal direction；The corresponding center of circle of second arc surface center of circle corresponding with the 4th arc surface is along device
The distance of longitudinal direction is b, and the 4th arc surface is the circular arc that radius is r1, and its opening direction is towards curvature knot terminal knot
Structure；Distance of the corresponding center of circle in the three-arc face center of circle corresponding with the 5th arc surface along device longitudinal direction is b, described
Distance of the corresponding center of circle of the 4th arc surface center of circle corresponding with the 6th arc surface along device longitudinal direction is b, the 6th circle
Cambered surface is the quarter circular arc that radius is r1, and its opening direction is towards curvature junction termination structures；B specific span is 0
To 15 microns.
7. a kind of junction termination structures of horizontal high voltage power device according to claim 6, it is characterised in that the straight line
The junction of p type buried layer (9) is located in N-type drift region (2) in p type buried layer (9) and curvature junction termination structures in junction termination structures,
Its spacing with the junction of N-type drift region (2) in N-type drift region (2) in straight line junction termination structures and curvature junction termination structures
For b；B specific span is 0 to 15 microns.
8. a kind of junction termination structures of horizontal high voltage power device according to claim 6, it is characterised in that the straight line
The junction of p type buried layer (9) is located in P type substrate (3) in p type buried layer (9) and curvature junction termination structures in junction termination structures, its
Spacing with the junction of N-type drift region (2) in N-type drift region (2) in straight line junction termination structures and curvature junction termination structures is
b；B specific span is 0 to 15 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542455.0A CN105206658B (en) | 2015-08-28 | 2015-08-28 | A kind of junction termination structures of horizontal high voltage power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542455.0A CN105206658B (en) | 2015-08-28 | 2015-08-28 | A kind of junction termination structures of horizontal high voltage power device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105206658A CN105206658A (en) | 2015-12-30 |
| CN105206658B true CN105206658B (en) | 2017-11-03 |
Family
ID=54954224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510542455.0A Expired - Fee Related CN105206658B (en) | 2015-08-28 | 2015-08-28 | A kind of junction termination structures of horizontal high voltage power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105206658B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
| CN102339857A (en) * | 2010-07-15 | 2012-02-01 | 上海华虹Nec电子有限公司 | DMOS device and manufacturing methods thereof |
| CN103928527A (en) * | 2014-04-28 | 2014-07-16 | 电子科技大学 | Junction terminal structure of transverse high-voltage power semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100887030B1 (en) * | 2007-05-29 | 2009-03-04 | 주식회사 동부하이텍 | Method for fabricating a high voltage draft in a semiconductor |
-
2015
- 2015-08-28 CN CN201510542455.0A patent/CN105206658B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339857A (en) * | 2010-07-15 | 2012-02-01 | 上海华虹Nec电子有限公司 | DMOS device and manufacturing methods thereof |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
| CN103928527A (en) * | 2014-04-28 | 2014-07-16 | 电子科技大学 | Junction terminal structure of transverse high-voltage power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105206658A (en) | 2015-12-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105047694B (en) | A kind of junction termination structures of horizontal high voltage power device | |
| US20130153999A1 (en) | Trench gate mosfet device | |
| CN103165657B (en) | A kind of junction termination structures of horizontal high voltage power semiconductor device | |
| CN105047693B (en) | A kind of junction termination structures of transverse direction high voltage power device | |
| TW201931598A (en) | A novel SGT superjunction MOSFET structure | |
| CN103928528B (en) | A kind of junction termination structures of horizontal high voltage power semiconductor device | |
| CN104124274A (en) | Super junction lateral double diffusion metal oxide semiconductor field effect transistor and manufacturing method thereof | |
| CN105140269B (en) | A kind of junction termination structures of transverse direction high voltage power device | |
| CN105206659B (en) | A kind of junction termination structures of horizontal high voltage power device | |
| CN103928500B (en) | Junction terminal structure of transverse high-voltage power semiconductor device | |
| CN106252393B (en) | The junction termination structures of lateral high voltage power device | |
| CN102637731A (en) | Terminal structure of channel power metal oxide semiconductor (MOS) device and manufacture method of terminal structure | |
| CN106129118B (en) | The junction termination structures of lateral high voltage power device | |
| CN105206657B (en) | A kind of junction termination structures of horizontal high voltage power device | |
| CN105206658B (en) | A kind of junction termination structures of horizontal high voltage power device | |
| CN106206677B (en) | The junction termination structures of lateral high voltage power device | |
| CN107819026A (en) | Ldmos device | |
| CN104617139B (en) | LDMOS device and manufacture method | |
| CN106098755B (en) | The junction termination structures of lateral high voltage power device | |
| Duan et al. | REBULF super junction MOSFET with N+ buried layer | |
| CN106098754B (en) | The junction termination structures of lateral high voltage power device | |
| CN102760753B (en) | SOI LDMOS device with interface N<+> layer | |
| CN106206739B (en) | The junction termination structures of lateral high voltage power device | |
| CN112864150B (en) | Super junction power device | |
| CN112885827B (en) | Semiconductor super-junction power device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171103 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |