CN103928528B - A kind of junction termination structures of horizontal high voltage power semiconductor device - Google Patents
A kind of junction termination structures of horizontal high voltage power semiconductor device Download PDFInfo
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- CN103928528B CN103928528B CN201410175873.6A CN201410175873A CN103928528B CN 103928528 B CN103928528 B CN 103928528B CN 201410175873 A CN201410175873 A CN 201410175873A CN 103928528 B CN103928528 B CN 103928528B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000011982 device technology Methods 0.000 abstract description 2
- 230000007704 transition Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 239000012141 concentrate Substances 0.000 description 2
- 241001212149 Cathetus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
Abstract
The present invention relates to semiconductor power device technology field, a kind of junction termination structures of horizontal high voltage power semiconductor device are particularly related to.By reducing device in curvature knot end P type substrate and the gross area of N-type drift region, so as to prevent device, in P type substrate area, generation exhausts the present invention in advance, it is ensured that device is pressure-resistant curvature knot end.Beneficial effects of the present invention are, the pressure-resistant influence of the curvature whole device of knot terminal-pair can significantly be reduced, make the device will not be excessive in the electric field of transition region, and by changing the area of drift region or P type substrate so that pressure-resistant being optimal of device, it is ensured that device it is pressure-resistant.Present invention is particularly suitable for the junction termination structures of horizontal high voltage power semiconductor device.
Description
Technical field
The present invention relates to semiconductor power device technology field, a kind of horizontal high voltage power semiconductor is particularly related to
The junction termination structures of device.
Background technology
As the motorized degree of industry is increasingly improved, the requirement more and more higher to high-voltage large current device.In order to carry
Device high it is pressure-resistant, various junction termination structures are occurred in that to meet the resistance to pressure request of device.
The development of high-voltage power integrated circuit be unable to do without horizontal high voltage power semiconductor device that can be integrated.Horizontal high pressure work(
Rate semiconductor devices is usually closing structure, the structure such as including circular, racetrack and interdigitated.For the racetrack structure for closing
And interdigitated configuration, small curvature terminal occurs in racetrack portion and tip portion, electric field line is easily sent out at small radius of curvature
It is raw to concentrate, so as to cause device electric field at small radius of curvature higher, there is avalanche breakdown in advance.And use straight line knot terminal knot
The design of structure and the curvature junction termination structures racetrack terminal structure for being combined and the terminal structure for including elbow structure, can
Avoid device from puncturing in advance in curvature knot end, improve the pressure-resistant of device, but due at curvature terminal structure, device
Equipotential lines can be easier to concentrate relative to straight line terminal structure, therefore cause electric field higher than other places, and generation is hit in advance
Wear, reduce the pressure-resistant of device；And high voltage power device is at curvature junction termination structures, it is mainly used to bear pressure-resistant drift region
Can be less relative to the drift region of straight line end, this can cause to be exhausted in advance in the drift region at curvature terminal, influence device
Part it is pressure-resistant.
The content of the invention
It is to be solved by this invention, aiming at above-mentioned tradition transverse direction high voltage power semiconductor device at curvature terminal
The problem that drift region exhausts in advance, proposes a kind of junction termination structures of horizontal high voltage power semiconductor device.
The present invention solves the technical scheme that is used of above-mentioned technical problem：A kind of horizontal high voltage power semiconductor device
Junction termination structures, as shown in figure 5, including straight line junction termination structures and curvature junction termination structures；The straight line junction termination structures with
Horizontal high voltage power semiconductor device active region structure is identical, including drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid
Pole polysilicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone 8；P-well areas 6 and N-type drift region
2 upper stratas for being located at P type substrate 3, wherein P-well areas 6 are located at centre, and both sides are N-type drift regions 2, and P-well areas 6 float with N-type
Area 2 is moved to be connected；Both sides in N-type drift region 2 away from P-well areas 6 are drain electrode N+Contact zone 1；Drain electrode N+Contact zone 1 is away from curvature
The transverse width of junction termination structures one end is more than the transverse width near curvature junction termination structures one end；The upper strata in P-well areas 6
With the source electrode N being connected with metallizing source+Contact zone 7 and source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre,
Source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；Source electrode N+The table of P-well areas 6 between contact zone 7 and N-type drift region 2
Face is gate oxide 5, and the surface of gate oxide 5 is grid polycrystalline silicon 4；
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8；The surface of P-well areas 6 is gate oxide 5, and the surface of gate oxide 5 is
Grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift region 2, gate oxide 5 and grid polycrystalline silicon 4 are distinguished
With the N in straight line junction termination structures+Contact zone 1, N-type drift region 2, gate oxide 5 are connected with grid polycrystalline silicon 4 and form annular
Structure；Wherein, the annular N in curvature junction termination structures+Contact zone 1 surrounds annular N-type drift region 2, in curvature junction termination structures
Annular N-type drift region 2 surround grid polycrystalline silicon 4 and gate oxide 5；With " P-well areas 6 and N in straight line junction termination structures
Type drift region 2 is connected " unlike, the P-well areas 6 in curvature junction termination structures are not attached to N-type drift region 2.
Beneficial effects of the present invention are that can significantly reduce the pressure-resistant influence of the curvature whole device of knot terminal-pair, make device
Part will not be excessive in the electric field of transition region, and by changing the area of drift region or P type substrate so that the pressure-resistant of device reaches
To optimization, it is ensured that device it is pressure-resistant, while with it is existing it is various knot terminal technology compared with, the present invention do not additionally introduce
New terminal structure, therefore, it is possible in the case where processing step and cost is not increased, improve device in curvature knot end
Pressure-resistant problem.
Brief description of the drawings
Fig. 1 is the junction termination structures schematic diagram of traditional transverse direction high voltage power semiconductor device；
Fig. 2 is the junction termination structures top view of traditional transverse direction high voltage power semiconductor device；
Fig. 3 is the device schematic cross-section in Fig. 2 along AA` lines；
Fig. 4 is the device schematic cross-section in Fig. 2 along BB` lines；
Fig. 5 is the junction termination structures schematic diagram of horizontal high voltage power semiconductor device of the invention；
Fig. 6 is the junction termination structures top view of horizontal high voltage power semiconductor device of the invention；
Fig. 7 is the device schematic cross-section in Fig. 6 along AA` lines；
Fig. 8 is the device schematic cross-section in Fig. 6 along BB` lines；
Fig. 9 is the device schematic cross-section in Fig. 6 along CC` lines；
Figure 10 is the device architecture schematic diagram of embodiment 1；
Figure 11 is the device architecture schematic diagram of embodiment 2；
Figure 12 is the device architecture schematic diagram of embodiment 3；
Figure 13 is the device architecture schematic diagram of embodiment 4；
Figure 14 is the device architecture schematic diagram of embodiment 5；
Figure 15 is the device architecture schematic diagram of embodiment 6.
Specific embodiment
With reference to the accompanying drawings and examples, technical scheme is described in detail：
A kind of horizontal high-voltage power that the present invention is constituted for traditional line junction termination structures and curvature junction termination structures
Semiconductor devices, proposes new curvature terminal structure, further improves pressure-resistant problem of the device in curvature knot end；And technique
Simply, it is easy to accomplish.The main technical schemes that solve problem of the present invention is used are by being leaked at device curvature junction termination structures
The change of end structure increased device in curvature knot end P type substrate and the gross area of N-type drift region, the different device of correspondence
And doping concentration can prevent device in P type substrate area or N-type by changing the area of P type substrate and N-type drift region
Drift region occurs to exhaust in advance, makes device in pressure-resistant being optimal of curvature knot end, it is ensured that device is in curvature knot end
It is pressure-resistant.
As depicted in figs. 1 and 2, it is the junction termination structures of traditional horizontal high voltage power semiconductor device, including straight line knot
Terminal structure and curvature junction termination structures；As shown in figure 3, straight line junction termination structures are active with horizontal high voltage power semiconductor device
Plot structure is identical, including drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well
Area 6, source electrode N+Contact zone 7, source electrode P+Contact zone 8；P-well areas 6 are located at the upper strata of P type substrate 3, wherein P- with N-type drift region 2
Well areas 6 are located at centre, and both sides are N-type drift regions 2, and P-well areas 6 are connected with N-type drift region 2；In N-type drift region 2 away from
The both sides in P-well areas 6 are drain electrode N+Contact zone 1, the upper strata in P-well areas 6 has the source electrode N being connected with metallizing source+Contact
Area 7 and source electrode P+Contact zone 8, wherein source electrode P+Contact zone 8 is located at centre, source electrode N+Contact zone 7 is located at source electrode P+8 liang of contact zone
Side；Source electrode N+The surface of P-well areas 6 between contact zone 7 and N-type drift region 2 is gate oxide 5, and the surface of gate oxide 5 is
Grid polycrystalline silicon 4；
As shown in figure 4, curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid are more
Crystal silicon 4, gate oxide 5, P-well areas 6, source electrode P+Contact zone 8；The surface of P-well areas 6 is gate oxide 5, gate oxide 5
Surface is grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift region 2, gate oxide 5 and gate polycrystalline
Silicon 4 respectively with straight line junction termination structures in N+Contact zone 1, N-type drift region 2, gate oxide 5 are connected simultaneously with grid polycrystalline silicon 4
Form loop configuration；Wherein, the annular N in curvature junction termination structures+Contact zone 1 surrounds annular N-type drift region 2, curvature knot end
Annular N-type drift region 2 in end structure surrounds grid polycrystalline silicon 4 and gate oxide 5；With " the P- in straight line junction termination structures
Well areas 6 and N-type drift region 2 are connected " unlike, P-well areas 6 in curvature junction termination structures and N-type drift region 2 not phase
Even and each other away from being LPsub；The length of N-type drift region 2 is LNdrift。
As shown in Figure 5 and Figure 6, it is the junction termination structures of horizontal high voltage power semiconductor device of the invention, such as Fig. 7-9 institutes
Show, the structure of the invention place different from traditional structure be, drain electrode N of the invention+Contact zone 1 is away from curvature knot terminal knot
The transverse width of structure one end is more than the transverse width near curvature junction termination structures one end, so that relatively conventional structure is by reducing
Drain terminal N+The area of contact zone, increased the gross area of the drift region and substrate at curvature junction termination structures, device is born more
High is pressure-resistant.
Embodiment 1：
As shown in Figure 10, this example includes straight line junction termination structures and curvature junction termination structures；The straight line junction termination structures
It is identical with horizontal high voltage power semiconductor device active region structure, including drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3,
Grid polycrystalline silicon 4, gate oxide 5, P-well areas 6, source electrode N+Contact zone 7, source electrode P+Contact zone 8；P-well areas 6 drift about with N-type
Area 2 is located at the upper strata of P type substrate 3, and wherein P-well areas 6 are located at centre, and both sides are N-type drift regions 2, and P-well areas 6 and N-type
Drift region 2 is connected；Both sides in N-type drift region 2 away from P-well areas 6 are drain electrode N+Contact zone 1；Drain electrode N+Contact zone 1 is away from song
The transverse width of rate junction termination structures one end is more than the transverse width near curvature junction termination structures one end；P-well areas 6 it is upper
Layer has the source electrode N being connected with metallizing source+Contact zone 7 and source electrode P+Contact zone 8, wherein source electrode P+During contact zone 8 is located at
Between, source electrode N+Contact zone 7 is located at source electrode P+The both sides of contact zone 8；Source electrode N+P-well areas 6 between contact zone 7 and N-type drift region 2
Surface is gate oxide 5, and the surface of gate oxide 5 is grid polycrystalline silicon 4；
The curvature junction termination structures include drain electrode N+Contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well areas 6, source electrode P+Contact zone 8；The surface of P-well areas 6 is gate oxide 5, and the surface of gate oxide 5 is
Grid polycrystalline silicon 4；N in curvature junction termination structures+Contact zone 1, N-type drift region 2, gate oxide 5 and grid polycrystalline silicon 4 are distinguished
With the N in straight line junction termination structures+Contact zone 1, N-type drift region 2, gate oxide 5 are connected with grid polycrystalline silicon 4 and form annular
Structure；Wherein, the annular N in curvature junction termination structures+Contact zone 1 surrounds annular N-type drift region 2, in curvature junction termination structures
Annular N-type drift region 2 surround grid polycrystalline silicon 4 and gate oxide 5；With " P-well areas 6 and N in straight line junction termination structures
Type drift region 2 is connected " unlike, P-well areas 6 in curvature junction termination structures are not attached to and each other with N-type drift region 2
Away from being LPsub；The length of N-type drift region 2 is LNdriftt+ΔL.P-well areas 6 in its mean curvature junction termination structures drift about with N-type
The spacing L in area 2PsubWith the length L of N-type drift region 2NdriftTotal length in a few micrometers between some tens of pm.
N in this example cathetus junction termination structures+Contact zone 1 to curvature junction termination structures it is close when transverse width gradually contract
It is small, so as to reduce N+The area of contact zone 1, while making N in curvature junction termination structures+The relatively conventional structure of area of contact zone 1
Greatly reduce, making the gross area of curvature knot end P type substrate 3 and N-type drift region 2 increases, floated by P type substrate and N-type
The change of area's area is moved, can prevent device from occurring to exhaust in advance in P type substrate area or N-type drift region, it is ensured that device is in song
Rate knot end it is pressure-resistant.This example is in the original L of retainer member curvature knot endPsubLength it is constant in the case of, increased
LNdrifttLength, be changed into LNdrift+ Δ L, so as to increase the area of N-type drift region, when substrate doping is higher, passes through
The area of appropriate increase N-type drift region, can so ensure that P type substrate and the pressure-resistant of N-type drift region reach maximum.
Embodiment 2：
As shown in figure 11, this example place different from embodiment 1 is that retainer member is original in curvature knot end
LNdrifttLength it is constant in the case of, increased LPsubLength, be changed into LPsub+ Δ L, so as to increase the face in P type substrate area
Product, when substrate doping is relatively low, depletion region will extend to P type substrate area quickly, and the area for now increasing P type substrate area can
To prevent P type substrate area from exhausting in advance, it is ensured that device is pressure-resistant curvature knot end.
Embodiment 3：
As shown in figure 12, this example place different from embodiment 1 is, while increasing LPsubLength and LNdriftLength
Degree, so that it becomes LPsub+ΔL1And LNdrift+ΔL2, wherein Δ L1With Δ L2Sum is equal to Δ L, so as to increase P type substrate simultaneously
Area and the area of N-type drift region, make resistance to being optimal of pressure energy of device.
Embodiment 4：
As shown in figure 13, this example place different from embodiment 1 be, the N in curvature junction termination structures+Contact zone 1 is simultaneously
Annular is not formed, but it is the rectangle of arc to form corner, further increased p-type lining in curvature junction termination structures
Bottom 3 and the gross area of N-type drift region 2, further improve the resistance to pressure of device.This example is in retainer member curvature knot end
Original LPsubLength it is constant in the case of, increased LNdrifttLength, be changed into LNdrift+ Δ L, so as to increase N-type drift region
Area, when substrate doping is higher, by the area of appropriate increase N-type drift region, can so ensure P type substrate
Pressure-resistant with N-type drift region reaches maximum.
Embodiment 5：
As shown in figure 14, this example place different from embodiment 4 is that retainer member is original in curvature knot end
LNdrifttLength it is constant in the case of, increased LPsubLength, be changed into LPsub+ Δ L, so as to increase the face in P type substrate area
Product, when substrate doping is relatively low, depletion region will extend to P type substrate area quickly, and the area for now increasing P type substrate area can
To prevent P type substrate area from exhausting in advance, it is ensured that device is pressure-resistant curvature knot end.
Embodiment 6：
As shown in figure 15, this example place different from embodiment 4 is, while increasing LPsubLength and LNdriftLength
Degree, so as to increase the area of P type substrate area and N-type drift region simultaneously, makes resistance to being optimal of pressure energy of device.
Claims (1)
1. a kind of junction termination structures of horizontal high voltage power semiconductor device, including straight line junction termination structures and curvature knot terminal knot
Structure；The straight line junction termination structures are identical with horizontal high voltage power semiconductor device active region structure, including drain electrode N+Contact zone
(1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-well areas (6), source electrode N+Contact
Area (7), source electrode P+Contact zone (8)；P-well areas (6) are with N-type drift region (2) positioned at the upper strata of P type substrate (3), wherein P-
Positioned at centre, both sides are N-type drift region (2) in well areas (6), and P-well areas (6) are connected with N-type drift region (2)；N-type is drifted about
Both sides in area (2) away from P-well areas (6) are drain electrode N+Contact zone (1)；The upper strata in P-well areas (6) has and metallization source
Extremely connected source electrode N+Contact zone (7) and source electrode P+Contact zone (8), wherein source electrode P+Contact zone (8) is positioned at centre, source electrode N+Connect
Area (7) are touched positioned at source electrode P+Contact zone (8) both sides；Source electrode N+P-well areas (6) between contact zone (7) and N-type drift region (2)
Surface is gate oxide (5), and the surface of gate oxide (5) is grid polycrystalline silicon (4)；
The curvature junction termination structures include drain electrode N+Contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), gate oxide (5), P-well areas (6), source electrode P+Contact zone (8)；P-well areas (6) surface is gate oxide (5), grid oxygen
The surface for changing layer (5) is grid polycrystalline silicon (4)；N in curvature junction termination structures+Contact zone (1), N-type drift region (2), grid oxygen
Change layer (5) and grid polycrystalline silicon (4) respectively with straight line junction termination structures in N+Contact zone (1), N-type drift region (2), gate oxidation
Layer (5) is connected with grid polycrystalline silicon (4) and forms loop configuration；Wherein, the annular N in curvature junction termination structures+Contact zone (1)
Annular N-type drift region (2) is surrounded, the annular N-type drift region (2) in curvature junction termination structures surrounds grid polycrystalline silicon (4) and grid
Oxide layer (5)；From unlike " the P-well areas (6) in straight line junction termination structures are connected with N-type drift region (2) ", curvature knot
P-well areas (6) in terminal structure are not attached to N-type drift region (2)；
Characterized in that, the drain electrode N in straight line junction termination structures+Contact zone (1) is laterally wide away from curvature junction termination structures one end
Degree is more than the transverse width near curvature junction termination structures one end.
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| CN104638013B (en) * | 2015-01-30 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | Isolated form NLDMOS device |
| CN105206657B (en) * | 2015-08-28 | 2017-10-10 | 电子科技大学 | A kind of junction termination structures of horizontal high voltage power device |
| CN105206659B (en) * | 2015-08-28 | 2017-11-14 | 电子科技大学 | A kind of junction termination structures of horizontal high voltage power device |
| CN106098755B (en) * | 2016-08-25 | 2019-04-12 | 电子科技大学 | The junction termination structures of lateral high voltage power device |
| CN106252393B (en) * | 2016-08-25 | 2019-04-12 | 电子科技大学 | The junction termination structures of lateral high voltage power device |
| CN106298874B (en) * | 2016-08-25 | 2019-08-02 | 电子科技大学 | The junction termination structures of lateral high voltage power device |
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| CN101221986A (en) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | Thin film SOI thick grid oxygen power device with grid field plate |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
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| KR100887030B1 (en) * | 2007-05-29 | 2009-03-04 | 주식회사 동부하이텍 | Method for fabricating a high voltage draft in a semiconductor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101221986A (en) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | Thin film SOI thick grid oxygen power device with grid field plate |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
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