CN105047694A - Junction terminal structure of transverse high-voltage power device - Google Patents
Junction terminal structure of transverse high-voltage power device Download PDFInfo
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- CN105047694A CN105047694A CN201510542990.6A CN201510542990A CN105047694A CN 105047694 A CN105047694 A CN 105047694A CN 201510542990 A CN201510542990 A CN 201510542990A CN 105047694 A CN105047694 A CN 105047694A
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- 239000000758 substrate Substances 0.000 claims description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 241001212149 Cathetus Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7823—Lateral DMOS transistors, i.e. LDMOS transistors with an edge termination structure
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Abstract
The invention belongs to the technical field of a semiconductor, in particular relates to a junction terminal structure of a transverse high-voltage power device. In the structure, the inner wall of an N-type shift region 2 and the inner wall of a P-type buried layer 9 in a curvature junction terminal structure respectively extend to the middle until to be connected with the inner wall of an N-type shift region 2 and the inner wall of a P-type buried layer 9 in a direct junction terminal structure, included angles of Alpha degrees are generated between the extension directions and the vertical directions of the inner walls of the N-type shift region 2 and the P-type buried layer 9 in the direct junction terminal structure, and the Alpha degrees is 45 degrees. By the junction terminal structure, the curvature effect of an electric field at a connection part can be effectively relieved; and on the vertical direction of the extension direction at the connection part, the distance of the P-type buried layer 9 exceeding the N-type shift region is 5 micrometers, and thus, the problem of charge unbalance is solved. The junction terminal structure has the advantages that the problems of charge unbalance in the connection part between the direct junction terminal structure and the curvature junction terminal structure and the curvature effect of the electric field at the connection part are solved, a device is prevented from being broken down in advance, and thus, optimal breakdown voltage is obtained.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of junction termination structures of horizontal high voltage power device specifically.
Background technology
The development of high-voltage power integrated circuit be unable to do without the horizontal high voltage power semiconductor device of accessible site.Horizontal high voltage power semiconductor device is generally closing structure, comprises the structures such as circle, racetrack and interdigitated.For closed racetrack structure and interdigitated configuration, small curve terminal is there will be at racetrack portion and tip portion, electric field line easily occurs at small curvature radius place to concentrate, thus causing device in advance avalanche breakdown to occur at small curvature radius place, this proposes new challenge for horizontal high voltage power device domain structure.
Publication number be the Chinese patent of CN102244092A disclose " a kind of junction termination structures of horizontal high voltage power device, as shown in Figure 1, device terminal structure comprise drain electrode N
+1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well district 6, source electrode N
+7, source electrode P
+8.Device architecture is divided into two parts, comprises straight line junction termination structures and curvature junction termination structures.In straight line junction termination structures, P-well district 6 is connected with N-type drift region 2, when applying high voltage when draining, the PN junction metallurgical junction face that P-well district 6 and N-type drift region 2 are formed starts to exhaust, the depletion region of lightly doped n-type drift region 2 is withstand voltage by mainly bearing, and peak electric field appears at the PN junction metallurgical junction face that P-well district 6 is formed with N-type drift region 2.For the power line height solving the PN junction curvature metallurgical junction face that highly doped P-well district 6 is formed with lightly doped n-type drift region 2 is concentrated, cause device that the problem of avalanche breakdown occurs in advance, patent have employed curvature junction termination structures as shown in Figure 1, highly doped P-well district 6 is connected with doped with P type substrate 3, doped with P type substrate 3 is connected with lightly doped n-type drift region 2, and highly doped P-well district 6 is L with the distance of lightly doped n-type drift region 2
p.When device drain adds high pressure, device source fingertips curvature doped with P type substrate 3 is connected with lightly doped n-type drift region 2, instead of the PN junction metallurgical junction face that highly doped P-well district 6 is formed with lightly doped n-type drift region 2, doped with P type substrate 3 is depletion region increase additional charge, both effectively reduce the high peak electric field due to place of highly doped P-well district 6, introduce new peak electric field with N-type drift region 2 again.Because P type substrate 3 and N-type drift region 2 are all light dopes, so under equal bias voltage conditions, metallurgical junction place peak electric field reduces.Again because the highly doped P-well district 6 of device finger tip curvature and the contact of doped with P type substrate 3 increase the radius at P type curvature terminal place, alleviate the concentrations of electric field line, avoid device puncturing in advance at source fingertips curvature, improve the puncture voltage of device finger tip curvature.Meanwhile, the junction termination structures that this patent proposes also is applied in triple RESURF structure devices.Fig. 2 is that in device straight line junction termination structures, N-type drift region 2 is the device profile schematic diagram of triple RESURF structure; Fig. 3 is that in device curvature junction termination structures, N-type drift region 2 is the device profile schematic diagram of triple RESURF structure.But, this patent is under triple RESURF structure devices, the terminal structure of straight line junction termination structures and curvature junction termination structures connected component is not optimized, at connected component, because the imbalance of electric charge and junction electric field still exist curvature effect, power device can be caused to puncture in advance, and therefore device withstand voltage is not optimal value.
Summary of the invention
To be solved by this invention, be exactly the defect for traditional devices charge unbalance and junction electric field curvature effect, propose a kind of junction termination structures of horizontal high voltage power device.
For achieving the above object, the present invention adopts following technical scheme:
A junction termination structures for horizontal high voltage power device, as shown in Figure 4, comprises straight line junction termination structures and curvature junction termination structures;
Described straight line junction termination structures is identical with horizontal high voltage power device active area structure, comprises drain electrode N
+contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well district 6, source electrode N
+contact zone 7, source electrode P
+contact zone 8, p type buried layer 9; P-well district 6 and N-type drift region 2 are positioned at the upper strata of P type substrate 3, and wherein P-well district 6 is positioned at centre, and both sides are N-type drift region 2, and P-well district 6 is connected with N-type drift region 2; In N-type drift region 2 away from the both sides in P-well district 6 be drain electrode N
+the surface in contact zone 1, P-well district 6 has the source electrode N be connected with metallizing source
+contact zone 7 and source electrode P
+contact zone 8, wherein source electrode P
+contact zone 8 is positioned at centre, source electrode N
+contact zone 7 is positioned at source electrode P
+both sides, contact zone 8; P type buried layer 9 is arranged in N-type drift region 2, at P-well district 6 and N
+between contact zone 1; Source electrode N
+the top on the surface, P-well district 6 between contact zone 7 and N-type drift region 2 is gate oxide 5, and the top on the surface of gate oxide 5 is grid polycrystalline silicons 4.
Described curvature junction termination structures comprises drain electrode N
+contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well district 6, source electrode P
+contact zone 8, p type buried layer 9; Surface, P-well district 6 is gate oxide 5, and the surface of gate oxide 5 is grid polycrystalline silicons 4; N in curvature junction termination structures
+contact zone 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5 and p type buried layer 9 respectively with the N in straight line junction termination structures
+contact zone 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5 are connected with p type buried layer 9 and form loop configuration; Wherein, the annular N in curvature junction termination structures
+contact zone 1 surrounds annular N-type drift region 2, has annular grid polysilicon 4 and ring-shaped gate oxide layer 5 in the annular N-type drift region 2 in curvature junction termination structures; With " the P-well district 6 in straight line junction termination structures is connected with N-type drift region 2 " unlike, the P-well district 6 in curvature junction termination structures is not connected with N-type drift region 2 and mutual spacing is L
p, L
pconcrete span between several microns to some tens of pm;
It is characterized in that, N-type drift region 2 and the side of N-type drift region 2 junction in straight line junction termination structures near P-well district 6 in described curvature junction termination structures, in curvature junction termination structures, the end of N-type drift region 2 has the first inclined-plane, described first inclined-plane is connected with P-well district 6, and the first inclined-plane and device crossline direction have ɑ degree angle; In described curvature junction termination structures, p type buried layer 9 and p type buried layer 9 junction in straight line junction termination structures are near the side in P-well district 6, and in curvature junction termination structures, the end of p type buried layer 9 has the second inclined-plane, and described second inclined-plane is parallel with P first inclined-plane; The concrete span of ɑ degree angle is 30 degree to 60 degree; Spacing between described first inclined-plane and the second inclined-plane is that the concrete span of b, b is 0 to 15 microns; The spacing of the annular N-type drift region 2 in the inwall of the ring-shaped P type buried regions 9 in described curvature junction termination structures and curvature junction termination structures and the junction of P type substrate 3 is a.
The technical scheme that the present invention is total, at straight line junction termination structures and curvature junction termination structures connected component, in curvature junction termination structures, N-type drift region 2 inwall extends to centre and is connected with N-type drift region 2 inwall in direct junction termination structures, in bearing of trend and direct junction termination structures, N-type drift region 2 inwall vertical direction has ɑ degree angle, and the concrete span of ɑ degree angle is 30 degree to 60 degree; In described curvature junction termination structures, p type buried layer 9 inwall extends to centre and is connected with p type buried layer 9 inwall in direct junction termination structures, in bearing of trend and direct junction termination structures, p type buried layer 9 inwall vertical direction has ɑ degree angle, and the concrete span of ɑ degree angle is 30 degree to 60 degree; Compared to traditional structure, connect straight line junction termination structures and curvature junction termination structures in junction with ɑ degree angle, effectively can alleviate the curvature effect of junction electric field.In the vertical direction of junction bearing of trend, between p type buried layer 9 and N-type drift region 2, there is spacing b, the concrete span 0-15 micron of b.In actual process, N-type drift region 2 is formed by ion implantation, after annealing knot, p type buried layer 9 to outdiffusion, can be exceeded some distances of N-type drift region 2, makes the N-type drift region 2 spread out have p type impurity to exhaust by N-type drift region 2, like this, at straight line junction termination structures and curvature junction termination structures connected component, the problem of charge unbalance is improved, thus obtains optimized puncture voltage.In such scheme, should be understood that, in straight line junction termination structures, in p type buried layer 9 and curvature junction termination structures, the outer wall of p type buried layer 9 refers to that in whole device, p type buried layer 9 is near the side of N+ contact zone 1, and inwall refers to that in whole device, p type buried layer 9 is near the side of P type substrate 3; The outer wall at other positions and inwall implication all for this reason.
Further, in described curvature junction termination structures, in p type buried layer 9 outer wall and straight line junction termination structures, p type buried layer 9 outer wall is arranged in N-type drift region 2, the spacing of the annular N-type drift region 2 in the inwall of the ring-shaped P type buried regions 9 in described curvature junction termination structures and curvature junction termination structures and the junction of P type substrate 3 is that the concrete span of a, a is 0 to 15 microns.
Further, in described straight line junction termination structures, the inwall of p type buried layer 9 is arranged in the N-type drift region 2 of curvature junction termination structures.
Further, in described straight line junction termination structures, the inwall of p type buried layer 9 is arranged in the P type substrate 3 of curvature junction termination structures.
Further, described second inclined-plane is arranged in the N-type drift region 2 of curvature junction termination structures.
Further, described second inclined-plane is arranged in the P type substrate 3 of curvature junction termination structures.
Beneficial effect of the present invention is, the present invention is by analyzing the terminal structure of straight line junction termination structures and curvature junction termination structures connected component and optimize, improve problem and the electric field curvature effect of straight line junction termination structures and curvature junction termination structures connected component charge unbalance, avoid device to puncture in advance, thus obtain optimized puncture voltage.
Accompanying drawing explanation
Fig. 1 is the junction termination structures schematic diagram of traditional horizontal high voltage power semiconductor device;
Fig. 2 is that in traditional device straight line junction termination structures, N-type drift region 2 is the device profile schematic diagram of triple RESURF structure;
Fig. 3 is that in traditional device curvature junction termination structures, N-type drift region 2 is the device profile schematic diagram of triple RESURF structure;
Fig. 4 is the junction termination structures schematic diagram of horizontal high voltage power device of the present invention;
Fig. 5 is the structural representation of embodiment 1;
Fig. 6 is the structural representation of embodiment 2;
Fig. 7 is the structural representation of embodiment 3;
Fig. 8 is the structural representation of embodiment 4.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail:
Embodiment 1:
As shown in Figure 5, the structure of this example is for comprising straight line junction termination structures and curvature junction termination structures;
Described straight line junction termination structures is identical with horizontal high voltage power device active area structure, comprises drain electrode N
+contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well district 6, source electrode N
+contact zone 7, source electrode P
+contact zone 8, p type buried layer 9; P-well district 6 and N-type drift region 2 are positioned at the upper strata of P type substrate 3, and wherein P-well district 6 is positioned at centre, and both sides are N-type drift region 2, and P-well district 6 is connected with N-type drift region 2; In N-type drift region 2 away from the both sides in P-well district 6 be drain electrode N
+the surface in contact zone 1, P-well district 6 has the source electrode N be connected with metallizing source
+contact zone 7 and source electrode P
+contact zone 8, wherein source electrode P
+contact zone 8 is positioned at centre, source electrode N
+contact zone 7 is positioned at source electrode P
+both sides, contact zone 8; P type buried layer 9 is arranged in N-type drift region 2, at P-well district 6 and N
+between contact zone 1; Source electrode N
+the top on the surface, P-well district 6 between contact zone 7 and N-type drift region 2 is gate oxide 5, and the top on the surface of gate oxide 5 is grid polycrystalline silicons 4.
Described curvature junction termination structures comprises drain electrode N
+contact zone 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4, gate oxide 5, P-well district 6, source electrode P
+contact zone 8, p type buried layer 9; Surface, P-well district 6 is gate oxide 5, and the surface of gate oxide 5 is grid polycrystalline silicons 4; N in curvature junction termination structures
+contact zone 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5 and p type buried layer 9 respectively with the N in straight line junction termination structures
+contact zone 1, N-type drift region 2, grid polycrystalline silicon 4, gate oxide 5 are connected with p type buried layer 9 and form loop configuration; Wherein, the annular N in curvature junction termination structures
+contact zone 1 surrounds annular N-type drift region 2, has annular grid polysilicon 4 and ring-shaped gate oxide layer 5 in the annular N-type drift region 2 in curvature junction termination structures; With " the P-well district 6 in straight line junction termination structures is connected with N-type drift region 2 " unlike, the P-well district 6 in curvature junction termination structures is not connected with N-type drift region 2 and mutual spacing is L
p, L
pconcrete span between several microns to some tens of pm;
In described curvature junction termination structures, N-type drift region 2 inwall extends to centre and is connected with N-type drift region 2 inwall in direct junction termination structures, in bearing of trend and direct junction termination structures, N-type drift region 2 inwall vertical direction has ɑ degree angle, and ɑ degree angle is 45 degree; In described curvature junction termination structures, p type buried layer 9 inwall extends to centre and is connected with p type buried layer 9 inwall in direct junction termination structures, and in bearing of trend and direct junction termination structures, p type buried layer 9 inwall vertical direction has ɑ degree angle, and ɑ degree angle is 45 degree; In described straight line junction termination structures, in p type buried layer 9 and curvature junction termination structures, the junction of p type buried layer 9 is arranged in P type substrate 3, in straight line junction termination structures, in p type buried layer 9 and curvature junction termination structures, in the junction of p type buried layer 9 and direct junction termination structures, in N-type drift region 2 and curvature junction termination structures, the spacing of the junction of N-type drift region 2 is b, b is 5 microns; The inwall of the ring-shaped P type buried regions 9 in described curvature junction termination structures is arranged in N-type drift region 2, the spacing of the annular N-type drift region 2 in the inwall of the ring-shaped P type buried regions 9 in curvature junction termination structures and curvature junction termination structures and the junction of P type substrate 3 is a, a is 5 microns.
The operation principle of this example is: in curvature junction termination structures, N-type drift region 2 inwall extends to centre and is connected with N-type drift region 2 inwall in direct junction termination structures, in bearing of trend and direct junction termination structures, N-type drift region 2 inwall vertical direction has ɑ degree angle, and ɑ degree angle is 45 degree; In described curvature junction termination structures, p type buried layer 9 inwall extends to centre and is connected with p type buried layer 9 inwall in direct junction termination structures, and in bearing of trend and direct junction termination structures, p type buried layer 9 inwall vertical direction has ɑ degree angle, and ɑ degree angle is 45 degree; Like this, compared to traditional structure, connect straight line junction termination structures and curvature junction termination structures in junction with miter angle, effectively can alleviate the curvature effect of junction electric field.Straight line junction termination structures and curvature junction termination structures connected component, in the vertical direction of junction bearing of trend, it is 5 microns that p type buried layer 9 exceeds N-type drift region 2 distance.In actual process, N-type drift region 2 is formed by ion implantation, after annealing knot, N-type drift region 2 can spread, and p type buried layer 9 is exceeded some distances of N-type drift region 2, makes the N-type drift region 2 spread out have p type impurity to exhaust, like this, at straight line junction termination structures and curvature junction termination structures connected component, the problem of charge unbalance and junction electric field curvature effect is improved, thus the puncture voltage more optimized.
Embodiment 2
As shown in Figure 6, the place that this example is different from embodiment 1 is, the inwall of the ring-shaped P type buried regions 9 in this routine mean curvature junction termination structures is arranged in P type substrate 3, and its principle is identical with embodiment 1.
Embodiment 3
As shown in Figure 7, the place that this example is different from embodiment 2 is, in this routine cathetus junction termination structures p type buried layer 9 and curvature junction termination structures, the junction of p type buried layer 9 is arranged in N-type drift region 2, and its principle is identical with embodiment 2.
Embodiment 4
As shown in Figure 8, the place that this example is different from embodiment 1 is, in this routine cathetus junction termination structures p type buried layer 9 and curvature junction termination structures, the junction of p type buried layer 9 is arranged in N-type drift region 2, and its principle is identical with embodiment 1.
Claims (6)
1. a junction termination structures for horizontal high voltage power device, comprises straight line junction termination structures and curvature junction termination structures;
Described straight line junction termination structures is identical with horizontal high voltage power device active area structure, comprises drain electrode N
+contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-well district (6), source electrode N
+contact zone (7), source electrode P
+contact zone (8), p type buried layer (9); P-well district (6) and N-type drift region (2) are positioned at the upper strata of P type substrate (3), wherein P-well district (6) are positioned at centre, both sides are N-type drift region (2), and P-well district (6) are connected with N-type drift region (2); In N-type drift region (2) away from the both sides of P-well district (6) be drain electrode N
+contact zone (1), the surface of P-well district (6) has the source electrode N be connected with metallizing source
+contact zone (7) and source electrode P
+contact zone (8), wherein source electrode P
+contact zone (8) is positioned at centre, source electrode N
+contact zone (7) is positioned at source electrode P
+contact zone (8) both sides; P type buried layer (9) is arranged in N-type drift region (2), at P-well district (6) and N
+between contact zone (1); Source electrode N
+the top on the surface, P-well district (6) between contact zone (7) and N-type drift region (2) is gate oxide (5), and the top on the surface of gate oxide (5) is grid polycrystalline silicon (4);
Described curvature junction termination structures comprises drain electrode N
+contact zone (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-well district (6), source electrode P
+contact zone (8), p type buried layer (9); P-well district (6) surface is gate oxide (5), and the surface of gate oxide (5) is grid polycrystalline silicon (4); N in curvature junction termination structures
+contact zone (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide (5) and p type buried layer (9) respectively with the N in straight line junction termination structures
+contact zone (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide (5) are connected with p type buried layer (9) and form loop configuration; Wherein, the annular N in curvature junction termination structures
+contact zone (1) surrounds annular N-type drift region (2), has annular grid polysilicon (4) and ring-shaped gate oxide layer (5) in the annular N-type drift region (2) in curvature junction termination structures; With " the P-well district (6) in straight line junction termination structures is connected with N-type drift region (2) " unlike, the P-well district (6) in curvature junction termination structures is not connected with N-type drift region (2) and mutual spacing is L
p, L
pconcrete span between several microns to some tens of pm;
It is characterized in that, N-type drift region (2) and the side of N-type drift region (2) junction in straight line junction termination structures near P-well district (6) in described curvature junction termination structures, in curvature junction termination structures, the end of N-type drift region (2) has the first inclined-plane, described first inclined-plane is connected with P-well district (6), and the first inclined-plane and device crossline direction have ɑ degree angle; P type buried layer (9) and the side of p type buried layer (9) junction in straight line junction termination structures near P-well district (6) in described curvature junction termination structures, in curvature junction termination structures, the end of p type buried layer (9) has the second inclined-plane, and described second inclined-plane is parallel with P first inclined-plane; The concrete span of ɑ degree angle is 30 degree to 60 degree; Spacing between described first inclined-plane and the second inclined-plane is that the concrete span of b, b is 0 to 15 microns; The spacing of the annular N-type drift region (2) in the inwall of the ring-shaped P type buried regions (9) in described curvature junction termination structures and curvature junction termination structures and the junction of P type substrate (3) is a.
2. the junction termination structures of a kind of horizontal high voltage power device according to claim 1, it is characterized in that, in described curvature junction termination structures, in p type buried layer (9) outer wall and straight line junction termination structures, p type buried layer (9) outer wall is arranged in N-type drift region (2), the spacing of the annular N-type drift region (2) in the inwall of the ring-shaped P type buried regions (9) in described curvature junction termination structures and curvature junction termination structures and the junction of P type substrate (3) is that the concrete span of a, a is 0 to 15 microns.
3. the junction termination structures of a kind of horizontal high voltage power device according to claim 2, is characterized in that, in described straight line junction termination structures, the inwall of p type buried layer (9) is arranged in the N-type drift region (2) of curvature junction termination structures.
4. the junction termination structures of a kind of horizontal high voltage power device according to claim 2, is characterized in that, in described straight line junction termination structures, the inwall of p type buried layer (9) is arranged in the P type substrate (3) of curvature junction termination structures.
5. the junction termination structures of a kind of horizontal high voltage power device according to claim 3 or 4, is characterized in that, described second inclined-plane is arranged in the N-type drift region (2) of curvature junction termination structures.
6. the junction termination structures of a kind of horizontal high voltage power device according to claim 3 or 4, is characterized in that, described second inclined-plane is arranged in the P type substrate (3) of curvature junction termination structures.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510542990.6A CN105047694B (en) | 2015-08-28 | 2015-08-28 | A kind of junction termination structures of horizontal high voltage power device |
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|---|---|---|---|
| CN201510542990.6A CN105047694B (en) | 2015-08-28 | 2015-08-28 | A kind of junction termination structures of horizontal high voltage power device |
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| CN105047694A true CN105047694A (en) | 2015-11-11 |
| CN105047694B CN105047694B (en) | 2017-09-22 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN108110055A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106098754A (en) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | The laterally junction termination structures of high voltage power device |
| CN106098755A (en) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | The laterally junction termination structures of high voltage power device |
| CN106206739A (en) * | 2016-08-25 | 2016-12-07 | 电子科技大学 | The laterally junction termination structures of high voltage power device |
| CN106298874A (en) * | 2016-08-25 | 2017-01-04 | 电子科技大学 | The laterally junction termination structures of high voltage power device |
| CN106098754B (en) * | 2016-08-25 | 2019-04-12 | 电子科技大学 | The junction termination structures of lateral high voltage power device |
| CN106098755B (en) * | 2016-08-25 | 2019-04-12 | 电子科技大学 | The junction termination structures of lateral high voltage power device |
| CN106206739B (en) * | 2016-08-25 | 2019-07-12 | 电子科技大学 | The junction termination structures of lateral high voltage power device |
| CN108110055A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and electronic device |
| CN108110055B (en) * | 2016-11-25 | 2020-08-25 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and electronic device |
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