CN106098755A - The laterally junction termination structures of high voltage power device - Google Patents
The laterally junction termination structures of high voltage power device Download PDFInfo
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- CN106098755A CN106098755A CN201610728886.0A CN201610728886A CN106098755A CN 106098755 A CN106098755 A CN 106098755A CN 201610728886 A CN201610728886 A CN 201610728886A CN 106098755 A CN106098755 A CN 106098755A
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- 239000000758 substrate Substances 0.000 claims abstract description 53
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005272 metallurgy Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The present invention provides the junction termination structures of a kind of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；Curvature junction termination structures includes the N that drains+Contact area, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide, P well district, source electrode P+Contact area；N in curvature junction termination structures+Contact area, grid polycrystalline silicon, gate oxide, respectively with the N in straight line junction termination structures+Contact area, grid polycrystalline silicon, gate oxide are connected and form loop configuration, and the part between the inner and outer boundary of N-type drift region is divided into multiple triangle subarea 2 the most successively1、22….2N；Drain electrode N+Contact area surrounds triangle subarea 21、22….2N, owing to the structural curvature of the present invention ties N-type drift region traditional structure many to be reduced compared with the n-type doping concentration of P type substrate intersection of terminal part, so P type substrate can more effectively exhaust N-type drift region, so the pressure of device is more preferably optimized.
Description
Technical field
The invention belongs to technical field of semiconductors, the knot terminal more particularly to a kind of horizontal high voltage power device is tied
Structure.
Background technology
The development of high-voltage power integrated circuit be unable to do without horizontal high voltage power semiconductor device that can be integrated.Laterally high pressure merit
Rate semiconductor device is usually closing structure, the structure such as including circle, racetrack and interdigitated.Bent for tradition interdigitated configuration
The substrate concentration of rate termination environment is the lowest, and the concentration of drift region is of a relatively high, therefore substrate cannot abundant assisted depletion drift region,
Device is obtained high breakdown voltage for this and reliability has a certain impact.
The Chinese patent of Publication No. CN102244092A discloses the junction termination structures of a kind of horizontal high voltage power device,
Fig. 1 show the domain structure of device, and device terminal structure includes the N that drains+Contact area, N-type drift region, P type substrate, grid are many
Crystal silicon, gate oxide, P-well district, source electrode N+, source electrode P+.Device architecture is divided into two parts, including straight line junction termination structures and song
Rate junction termination structures.In straight line junction termination structures, P-well district is connected with N-type drift region, when drain electrode applies high voltage, and P-
The PN junction metallurgy junction that well district and N-type drift region are constituted starts to exhaust, and the depletion region of lightly doped n type drift region will mainly hold
Carrying on a shoulder pole pressure, peak electric field occurs in the PN junction metallurgy junction that P-well district is constituted with N-type drift region.For solving highly doped P-
The power line height of the PN junction curvature metallurgy junction that well district and lightly doped n type drift region are constituted is concentrated, and causes device in advance
The problem that avalanche breakdown occurs, this patent have employed curvature junction termination structures as shown in Figure 1, highly doped P-well district with gently mix
Miscellaneous P type substrate is connected, and doped with P type substrate is connected with lightly doped n type drift region, and highly doped P-well district floats with lightly doped n type
The distance moving district is LP.When device drain adds high pressure, device source fingertips curvature doped with P type substrate with N is lightly doped
Type drift region is connected, and instead of the PN junction metallurgy junction that highly doped P-well district is constituted with lightly doped n type drift region, is lightly doped
P type substrate is that depletion region increases additional charge, has both effectively reduced the high peak electric field at due to highly doped P-well district, again with
N-type drift region introduces new peak electric field.Owing to P type substrate and N-type drift region are all lightly doped, so at equal bias voltage
Under the conditions of, at metallurgical junction, peak electric field reduces.Serve as a contrast with doped with P type due to device finger tip curvature highly doped P-well district again
The contact at the end increases the radius at p-type curvature terminal, alleviates the concentrations of electric field line, it is to avoid device is bent in source fingertips
Puncturing in advance of rate part, improves the breakdown voltage of device finger tip curvature.Meanwhile, the junction termination structures that this patent is proposed
It is also applied in longitudinal super-junction structure device.Fig. 1 is the structural representation of device X/Y plane, due to curvature knot terminal part N drift
The doping content moving district is higher relative to P type substrate part, and P type substrate cannot fully exhaust N-type drift region, introduces relatively at intersection
High electric field, the PN junction causing P type substrate and N-type drift region to constitute punctures in advance, and therefore the pressure of device is not optimization, can
Also reduce by property.
Summary of the invention
To be solved by this invention, it is simply that for the drift of above-mentioned traditional devices curvature terminal structure division high-dopant concentration
The N-type impurity in district cannot sufficiently be lightly doped that the substrate p type impurity of concentration fully exhausts and the drift region that produces is handed over substrate
At boundary, the pressure problem with reliability of charge unbalance impact, proposes the junction termination structures of a kind of horizontal high voltage power device.
For achieving the above object, technical solution of the present invention is as follows:
The junction termination structures of a kind of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
Described curvature junction termination structures includes the N that drains+Contact area, N-type drift region, P type substrate, grid polycrystalline silicon, grid oxygen
Change floor, P-well district, source electrode P+Contact area；Surface, P-well district is gate oxide, and the surface of gate oxide is grid
Pole polysilicon；N in curvature junction termination structures+Contact area, grid polycrystalline silicon, gate oxide, respectively with straight line junction termination structures
In N+Contact area, grid polycrystalline silicon, gate oxide are connected and form loop configuration, and N-type drift region is divided into the straightway of bottom
With the semi-circular segments at top, the part between the inner and outer boundary of N-type drift region is divided into multiple triangle subarea 2 the most successively1、
22….2N；The base of each triangle subarea falls on the external boundary of N-type drift region, and the summit of each triangle subregion is positioned at
N-type drift region is on the inner boundary of p-shaped substrate, and the base length of each triangle subarea is respectively L1、L2….LN, each
The angle of two limits compositions that triangle subarea intersects at the summit near P type substrate is respectively θ1、θ2….θN, N-type drift region
The a length of L of external boundaryout；Wherein, L1、L2….LNValue all 0 to LoutBetween Wei meter, andDrain electrode N+
Contact area surrounds triangle subarea 21、22….2N, triangle subarea 21、22….2NInside there are annular grid polysilicon and annular
Gate oxide, P-well district and subregion 21、22….2NIt is not attached to and P-well district and triangle subarea 21Inner boundary
The distance on summit is LP。
It is preferred that, straight line junction termination structures be single RESURF structure, double RESURF structure,
Triple RESURF structure one therein.
It is preferred that, described straight line junction termination structures, including: drain electrode N+Contact area, N-type drift region 2b, P type substrate,
Grid polycrystalline silicon, gate oxide, P-well district, source electrode N+Contact area, source electrode P+Contact area；P-well district and N-type drift region 2bPosition
In the upper strata of P type substrate, wherein P-well district is positioned at centre, and both sides are N-type drift region 2b, and P-well district and N-type drift region 2b
It is connected；N-type drift region 2bIn be drain electrode N away from the both sides in P-well district+Contact area, the surface in P-well district has and metallization
The source electrode N that source electrode is connected+Contact area and source electrode P+Contact area, wherein source electrode P+Contact area is positioned at centre, source electrode N+Contact area is positioned at
Source electrode P+Both sides, contact area；Source electrode N+Contact area and N-type drift region 2bBetween the top on surface, P-well district be gate oxide,
The top on the surface of gate oxide is grid polycrystalline silicon, LdDrift region length for device.
It is preferred that, described triangle subarea 21、22….2NThe inner boundary of N-type drift region and external boundary it
Between be divided into M subsegment, wherein S1、S2….SMIt is respectively the width of each subsegment, r1、r2….rM-1It is followed successively by every sub regions adjacent
Distance between subsegment, wherein S1、S2….SM、r1、r2….rM-1Value all 0 to Ld-LpBetween, and
It is preferred that, form a complete annular N-type drift region 2 after N-type drift region is annealeda。
It is preferred that, adjacent triangle subregion 21、22….2NFall between the base on N-type drift region external boundary
Being provided with gap, gap is respectively d1、d2….dN-1, wherein d1、d2….dN-1Length between 0 to LoutBetween Wei meter,
It is preferred that, base length L of each triangle subarea of N-type drift region1、L2….LNIdentical.
It is preferred that, the dosage of the ion implanting of each triangle subarea is identical, the ion implanting of each subsegment
Dosage is identical.
It is preferred that, the width S of each subsegment of triangle subarea1、S2….SMIdentical.
It is preferred that, the N-type drift region 2 in linear type terminal structurebIt is divided into multistage in X direction.
The invention have the benefit that due to N-type drift region 2aThe doping of doping content P type substrate to be far above dense
Degree, each triangle subarea of N-type drift region 21、22….2NP type substrate between them can be compensated, last N-type drift region
Each triangle subarea 21、22….2NCan be connected together one complete N-type drift region 2 of formationa, this junction termination structures
N-type drift region 2aDopant profiles is the distribution that concentration is the highest from inside to outside, equal with the N-type drift region of conventional junction terminal structure
Even dopant profiles is different, and therefore the curvature of the junction termination structures of the present invention ties N-type drift region and the P type substrate of terminal part
The concentration of intersection N-type impurity ties N-type drift region and the P type substrate intersection of terminal part than the curvature of conventional junction terminal structure
The concentration of N-type impurity is low, so the N-type drift region of the curvature knot terminal part of the junction termination structures of the present invention can more preferable quilt
P type substrate is exhausted, and will not produce the phenomenon of charge unbalance, reduces N-type drift region and the peak electricity of P type substrate intersection
?；When normally working, can be by drain electrode to N+Contact area adds high pressure, and therefore the N-type drift region of same kind doping is also
High potential, P type substrate connects electronegative potential by underlayer electrode, so the N-type drift region of curvature knot terminal part is constituted with P type substrate
PN junction reverse-biased, P type substrate can assist P-well district to exhaust N-type drift region, due to the present invention structural curvature tie terminal part
N-type drift region traditional structure many to be reduced compared with the n-type doping concentration of P type substrate intersection, so P type substrate can be more
Effectively exhaust N-type drift region, so the pressure of device is more preferably optimized.
Accompanying drawing explanation
Fig. 1 is the domain schematic diagram of the junction termination structures of traditional horizontal high voltage power semiconductor device；
Fig. 2 is the domain schematic diagram of the curvature junction termination structures of the present invention；
Fig. 3 is the domain schematic diagram that the curvature junction termination structures of the present invention is divided into M subsegment；
Fig. 4 is the terminal structure 3d schematic diagram after the horizontal high voltage power device injection knot of the present invention；
Fig. 5 is the X-direction profile that the junction termination structures of the horizontal high voltage power device of the present invention starts from initial point；
Fig. 6 is the profile of the Y-direction that the junction termination structures of the horizontal high voltage power device of the present invention starts from initial point；
1 is drain electrode N+Contact area, 2 is N-type drift region, and 2a is complete annular N-type drift region, 2bFor straight line knot terminal knot
N-type drift region in structure, 3 is P type substrate, and 4 is grid polycrystalline silicon, and 5 is gate oxide, and 6 is P-well district, and 7 is source electrode N+Connect
Touching district, 8 is source electrode P+Contact area, 21、22….2NFor triangle subarea.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also be by the most different concrete realities
The mode of executing is carried out or applies, the every details in this specification can also based on different viewpoints and application, without departing from
Various modification or change is carried out under the spirit of the present invention.
The junction termination structures of a kind of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
Described curvature junction termination structures includes the N that drains+Contact area 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
Gate oxide 5, P-well district 6, source electrode P+Contact area 8；Surface, P-well district 6 is gate oxide 5, the table of gate oxide 5
It it is grid polycrystalline silicon 4 above face；N in curvature junction termination structures+Contact area 1, grid polycrystalline silicon 4, gate oxide 5, respectively with
N in straight line junction termination structures+Contact area 1, grid polycrystalline silicon 4, gate oxide 5 are connected and form loop configuration, N-type drift region
2 straightway being divided into bottom and the semi-circular segments at top, the part between the inner and outer boundary of N-type drift region 2 is divided into the most successively
Multiple triangle subareas 21、22….2N；The base of each triangle subarea falls on the external boundary of N-type drift region 2, each
The summit of triangle subregion is positioned at N-type drift region 2 on the inner boundary of p-shaped substrate 3, the bottom side length of each triangle subarea
Degree is respectively L1、L2….LN, the angle of two limits compositions that each triangle subarea intersects at the summit near P type substrate 3 is divided
Wei θ1、θ2….θN, a length of L of external boundary of N-type drift region 2out；Wherein, L1、L2….LNValue all 0 to LoutMicron
Between, andDrain electrode N+Contact area 1 surrounds triangle subarea 21、22….2N, triangle subarea 21、22…
.2NInside there are annular grid polysilicon 4 and ring-shaped gate oxide layer 5, P-well district 6 and subregion 21、22….2NIt is not attached to and P-
Well district 6 and triangle subarea 21The distance on summit of inner boundary be LP。
Described straight line junction termination structures, including: drain electrode N+Contact area 1, N-type drift region 2b, P type substrate 3, grid polycrystalline silicon
4, gate oxide 5, P-well district 6, source electrode N+Contact area 7, source electrode P+Contact area 8；P-well district 6 and N-type drift region 2bIt is positioned at P
The upper strata of type substrate 3, wherein P-well district 6 is positioned at centre, and both sides are N-type drift region 2b, and P-well district 6 and N-type drift region 2b
It is connected；N-type drift region 2bIn be drain electrode N away from the both sides in P-well district 6+Contact area 1, the surface in P-well district 6 has and metal
Change the source electrode N that source electrode is connected+Contact area 7 and source electrode P+Contact area 8, wherein source electrode P+Contact area 8 is positioned at centre, source electrode N+Contact
District 7 is positioned at source electrode P+Both sides, contact area 8；Source electrode N+Contact area 7 and N-type drift region 2bBetween the top on surface, P-well district 6 be
Gate oxide 5, the top on the surface of gate oxide 5 is grid polycrystalline silicon 4, LdDrift region length for device.
Straight line junction termination structures is possible not only to as single RESURF structure, it is also possible to for double RESURF structure,
Triple RESURF structure one therein.
A complete annular N-type drift region 2 is formed after N-type drift region 2 is annealeda。
Base length L of each triangle subarea of N-type drift region 21、L2….LNIdentical.
The dosage of the ion implanting of each triangle subarea is identical, and the ion implantation dosage of each subsegment is identical.
As another kind of mode of texturing, described triangle subarea 21、22….2NAt the inner boundary of N-type drift region and outer
M subsegment, wherein S it is divided between border1、S2….SMIt is respectively the width of each subsegment, r1、r2….rM-1It is followed successively by Mei Gezi district
Distance between the adjacent sub-section of territory, wherein S1、S2….SM、r1、r2….rM-1Value all 0 to Ld-LpBetween, and
The width S of each subsegment of triangle subarea1、S2….SMIdentical.
As another kind of mode of texturing, adjacent triangle subregion 21、22….2NFall on N-type drift region 2 external boundary
Being provided with gap between base, gap is respectively d1、d2….dN-1, wherein d1、d2….dN-1Length between 0 to LoutMicron
Between,
As another kind of mode of texturing, the N-type drift region 2 in linear type terminal structurebIt is divided into multistage in X direction.
The semi-conducting material of junction termination structures is silicon or carborundum.
Due to N-type drift region 2aThe doping content of doping content P type substrate to be far above, each triangle of N-type drift region
Shape subregion 21、22….2NP type substrate between them can be compensated, each triangle subarea of last N-type drift region 21、
22….2NCan be connected together one complete N-type drift region 2 of formationa, the N-type drift region 2 of this junction termination structuresaDopant profiles
Being the distribution that concentration is the highest from inside to outside, uniform dopant profiles is different with the N-type drift region of conventional junction terminal structure,
Therefore the curvature of the junction termination structures of the present invention ties the N-type drift region of terminal part and the concentration of P type substrate intersection N-type impurity
It is lower with the concentration of P type substrate intersection N-type impurity than the N-type drift region of the curvature of conventional junction terminal structure knot terminal part,
So the N-type drift region of the curvature knot terminal part of the junction termination structures of the present invention can preferably be exhausted by P type substrate, will not
Produce the phenomenon of charge unbalance, reduce N-type drift region and the peak value electric field of P type substrate intersection；When normally working, can lead to
Cross drain electrode to N+Contact area adds high pressure, and therefore the N-type drift region of same kind doping is also high potential, and P type substrate is passed through
Underlayer electrode connects electronegative potential, so the N-type drift region of curvature knot terminal part is reverse-biased with the PN junction that P type substrate is constituted, and P type substrate
P-well district 6 can be assisted to exhaust N-type drift region, owing to the structural curvature of the present invention ties N-type drift region and the p-type lining of terminal part
The n-type doping concentration of end intersection compares traditional structure many to be reduced, so P type substrate can more effectively exhaust N-type drift
District, so the pressure of device is more preferably optimized.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual and completed under technological thought without departing from disclosed spirit in all art
All equivalence modify or change, must be contained by the claim of the present invention.
Claims (10)
1. the junction termination structures of a horizontal high voltage power device, it is characterised in that: include straight line junction termination structures and curvature knot
Terminal structure；
Described curvature junction termination structures includes the N that drains+Contact area (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), gate oxide (5), P-well district (6), source electrode P+Contact area (8)；P-well district (6) surface is gate oxide (5),
The surface of gate oxide (5) is grid polycrystalline silicon (4)；N in curvature junction termination structures+Contact area (1), grid polycrystalline silicon
(4), gate oxide (5), respectively with the N in straight line junction termination structures+Contact area (1), grid polycrystalline silicon (4), gate oxide (5)
Being connected and form loop configuration, N-type drift region (2) is divided into straightway and the semi-circular segments at top of bottom, N-type drift region (2)
Part between inner and outer boundary is divided into multiple triangle subarea (2 the most successively1、22….2N)；Each triangle subarea
Base fall on the external boundary of N-type drift region (2), the summit of each triangle subregion is positioned at N-type drift region (2) near p-shaped
On the inner boundary of substrate (3), the base length of each triangle subarea is respectively L1、L2….LN, each triangle subarea
The angle of two the limits compositions intersecting at the summit near P type substrate (3) is respectively θ1、θ2….θN, the outside of N-type drift region (2)
The a length of L in boundaryout；Wherein, L1、L2….LNValue all 0 to LoutBetween Wei meter, andDrain electrode N+Contact area
1 surrounds triangle subarea (21、22….2N), triangle subarea (21、22….2NAnnular grid polysilicon (4) and ring is had in)
Shape gate oxide (5), P-well district (6) and subregion (21、22….2N) be not attached to and P-well district (6) and triangle subarea
(21) the distance on summit of inner boundary be LP。
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: straight line knot terminal knot
Structure is single RESURF structure, double RESURF structure, triple RESURF structure one therein.
The junction termination structures of horizontal high voltage power device the most according to claim 2, it is characterised in that: described straight line knot is eventually
End structure, including: drain electrode N+Contact area (1), N-type drift region (2b), P type substrate (3), grid polycrystalline silicon (4), gate oxide
(5), P-well district (6), source electrode N+Contact area (7), source electrode P+Contact area (8)；P-well district (6) and N-type drift region (2b) be positioned at
The upper strata of P type substrate (3), wherein P-well district (6) are positioned at centre, and both sides are N-type drift region (2b), and P-well district (6) and N
Type drift region (2b) be connected；N-type drift region (2bIn), the both sides away from P-well district (6) are drain electrode N+Contact area (1), P-well
The surface in district (6) has the source electrode N being connected with metallizing source+Contact area (7) and source electrode P+Contact area (8), wherein source electrode P+Connect
Touch district (8) and be positioned at centre, source electrode N+Contact area (7) is positioned at source electrode P+Contact area (8) both sides；Source electrode N+Contact area (7) floats with N-type
Move district (2bThe top on P-well district (6) surface between) is gate oxide (5), and the top on the surface of gate oxide (5) is grid
Pole polysilicon (4), LdDrift region length for device.
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: described triangle
Subregion (21、22….2N) between the inner boundary and external boundary of N-type drift region, it is divided into M subsegment, wherein S1、S2….SMRespectively
For the width of each subsegment, r1、r2….rM-1It is followed successively by the distance between every sub regions adjacent sub-section, wherein S1、S2….SM、r1、
r2….rM-1Value all 0 to Ld-LpBetween, and
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: N-type drift region (2)
A complete annular N-type drift region (2 is formed after annealeda)。
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: adjacent triangle
Region (21、22….2N) falling is provided with gap between the base on N-type drift region (2) external boundary, gap is respectively d1、d2…
.dN-1, wherein d1、d2….dN-1Length between 0 to LoutBetween Wei meter,
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: N-type drift region (2)
Base length L of each triangle subarea1、L2….LNIdentical.
The junction termination structures of horizontal high voltage power device the most according to claim 4, it is characterised in that: each triangle
The dosage of the ion implanting in region is identical, and the ion implantation dosage of each subsegment is identical.
The junction termination structures of horizontal high voltage power device the most according to claim 4, it is characterised in that: triangle subarea
The width S of each subsegment1、S2….SMIdentical.
The junction termination structures of horizontal high voltage power device the most according to claim 3, it is characterised in that: linear type terminal
N-type drift region (2 in structureb) it is divided into multistage in X direction.
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| CN111430448A (en) * | 2020-03-30 | 2020-07-17 | 电子科技大学 | Transverse power semiconductor device |
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