CN106098753A - The laterally junction termination structures of high voltage power device - Google Patents
The laterally junction termination structures of high voltage power device Download PDFInfo
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- CN106098753A CN106098753A CN201610725572.5A CN201610725572A CN106098753A CN 106098753 A CN106098753 A CN 106098753A CN 201610725572 A CN201610725572 A CN 201610725572A CN 106098753 A CN106098753 A CN 106098753A
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- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 23
- 239000012535 impurity Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 230000005684 electric field Effects 0.000 description 12
- 230000000694 effects Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005272 metallurgy Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The present invention provides the junction termination structures of a kind of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；Curvature junction termination structures includes the N that drains+Contact area, N-type drift region, P type substrate, grid polycrystalline silicon, gate oxide, Pwell district, p type island region, source electrode P+Contact area；Part between the inner and outer boundary of p type island region is divided into multiple disjunct subregion 6 the most successively1、62….6N；Drain electrode N in curvature junction termination structures+Contact area, N-type drift region, grid polycrystalline silicon, gate oxide, Pwell district respectively with the drain electrode N in straight line junction termination structures+Contact area, N-type drift region, grid polycrystalline silicon, gate oxide, Pwell district are connected and form loop configuration, the present invention is by using multiwindow inject and then N-type drift region concentration is carried out impurity compensation the p type island region in curvature terminal structure, thus reduce the concentration of N-type drift region, make N-type drift region completely depleted by the P type substrate of low concentration, avoid device to puncture in advance, thus obtain optimized breakdown voltage.
Description
Technical field
The invention belongs to technical field of semiconductors, the knot terminal more particularly to a kind of horizontal high voltage power device is tied
Structure.
Background technology
The development of high-voltage power integrated circuit be unable to do without horizontal high voltage power semiconductor device that can be integrated.Laterally high pressure merit
Rate semiconductor device is usually closing structure, the structure such as including circle, racetrack and interdigitated.Racetrack structure for Guan Bi
And interdigitated configuration, there will be little curvature terminal at racetrack portion and tip portion, electric field line is easily sent out at little radius of curvature
Raw concentration, thus cause device that avalanche breakdown occurs at little radius of curvature in advance, this is for horizontal high voltage power device domain
Structure proposes new challenge.
The Chinese patent of Publication No. CN102244092A discloses the junction termination structures of a kind of horizontal high voltage power device,
Fig. 1 show the domain structure of device, and device terminal structure includes the N that drains+Contact area, N-type drift region, P type substrate, grid are many
Crystal silicon, gate oxide, P-well district, source electrode N+, source electrode P+.Device architecture is divided into two parts, including straight line junction termination structures and song
Rate junction termination structures.In straight line junction termination structures, P-well district is connected with N-type drift region, when drain electrode applies high voltage, and P-
The PN junction metallurgy junction that well district and N-type drift region are constituted starts to exhaust, and the depletion region of lightly doped n type drift region will mainly hold
Carrying on a shoulder pole pressure, peak electric field occurs in the PN junction metallurgy junction that P-well district is constituted with N-type drift region.For solving highly doped P-
The power line height of the PN junction curvature metallurgy junction that well district and lightly doped n type drift region are constituted is concentrated, and causes device in advance
The problem that avalanche breakdown occurs, this patent have employed curvature junction termination structures as shown in Figure 1, highly doped P-well district with gently mix
Miscellaneous P type substrate is connected, and doped with P type substrate is connected with lightly doped n type drift region, and highly doped P-well district floats with lightly doped n type
The distance moving district is LP.When device drain adds high pressure, device source fingertips curvature doped with P type substrate with N is lightly doped
Type drift region is connected, and instead of the PN junction metallurgy junction that highly doped P-well district is constituted with lightly doped n type drift region, is lightly doped
P type substrate is that depletion region increases additional charge, has both effectively reduced the high peak electric field at due to highly doped P-well district, again with
N-type drift region introduces new peak electric field.Owing to P type substrate and N-type drift region are all lightly doped, so at equal bias voltage
Under the conditions of, at metallurgical junction, peak electric field reduces.Serve as a contrast with doped with P type due to device finger tip curvature highly doped P-well district again
The contact at the end increases the radius at p-type curvature terminal, alleviates the concentrations of electric field line, it is to avoid device is bent in source fingertips
Puncturing in advance of rate part, improves the breakdown voltage of device finger tip curvature.Meanwhile, the junction termination structures that this patent is proposed
It is also applied in longitudinal super-junction structure device.Fig. 1 is the structural representation of device X/Y plane, due to curvature knot terminal part drift
The doping content in district is higher relative to P type substrate part, and P type substrate cannot fully exhaust N-type drift region, introduces higher at intersection
Electric field, the PN junction causing P type substrate and N-type drift region to constitute punctures in advance, and therefore the pressure of device is not optimization, reliably
Property also reduces.
Summary of the invention
To be solved by this invention, it is simply that cannot be by low concentration for N-type drift region in traditional devices curvature terminal structure
P type substrate is completely depleted and the charge unbalance that causes and the defect of junction electric field curvature effect, propose a kind of the highest
The junction termination structures of pressure power device.
For achieving the above object, the present invention adopts the following technical scheme that
The junction termination structures of a kind of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
Described curvature junction termination structures includes the N that drains+Contact area, N-type drift region, P type substrate, grid polycrystalline silicon, grid oxygen
Change the p type island region within floor, Pwell district, N-type drift region, source electrode P+Contact area, N-type drift region and p type island region include the square of bottom
Region and the half-circle area at top, the part between the inner and outer boundary of p type island region is divided into multiple disjunct subregion the most successively
61、62….6N；Filling N-type drift region between adjacent subarea territory, every sub regions has two summits to fall in N-type drift region near P
On the inner boundary of shape substrate, two summits are positioned on the external boundary of N-type drift region, and one end that every sub regions is positioned at external boundary is little
In being positioned at one end of inner boundary, the length of one end that subregion is positioned at external boundary is respectively d1,1、d1,2….d1,N, subregion is positioned at
The length of one end of inner boundary is respectively d0,1、d0,2。。。。。。d0,N-1、d0,N, adjacent two sub regions are positioned at N-type drift region inner side edge
The distance between one end in boundary is respectively L0,1、L0,2……L0,N、L0,N+1, adjacent two sub regions are positioned at outside N-type drift region
Distance between borderline one end is respectively L1,1、L1,2……L1,N、L1,N+1；It is gate oxide above p type island region, gate oxide
Surface be grid polycrystalline silicon；Drain electrode N in curvature junction termination structures+Contact area, N-type drift region, grid polycrystalline silicon, grid
Oxide layer, Pwell district respectively with the drain electrode N in straight line junction termination structures+Contact area, N-type drift region, grid polycrystalline silicon, grid oxygen
Change floor, Pwell district is connected and forms loop configuration,；Wherein, the drain electrode N in curvature junction termination structures+Contact area surrounding n-type drift
Move district, in N-type drift region, have annular grid polysilicon, ring-shaped gate oxide layer and Pwell district, LdDrift region length for device.
It is preferred that, straight line junction termination structures is single RESURF, double RESURF, triple
RESURF structure one therein.
It is preferred that, described straight line junction termination structures, including: drain electrode N+Contact area, N-type drift region 2b, P type substrate,
Grid polycrystalline silicon, gate oxide, P-well district, source electrode N+Contact area, source electrode P+Contact area；P-well district and N-type drift region 2bPosition
In the upper strata of P type substrate, wherein P-well district is positioned at centre, and both sides are N-type drift region 2b, and P-well district and N-type drift region 2b
It is connected；N-type drift region 2bIn be drain electrode N away from the both sides in P-well district+Contact area, the surface in P-well district has and metallization
The source electrode N that source electrode is connected+Contact area and source electrode P+Contact area, wherein source electrode P+Contact area is positioned at centre, source electrode N+Contact area is positioned at
Source electrode P+Both sides, contact area；Source electrode N+Contact area and N-type drift region 2bBetween the top on surface, P-well district be gate oxide,
The top on the surface of gate oxide is grid polycrystalline silicon, LdFor the drift region length of device, P-well district and N-type drift region 2bNo
It is connected and both spacing are LP。
It is preferred that, subregion 61、62….6NShare same mask plate with P-well district or separately add mask plate and enter
Row p type impurity injects and is formed.
It is preferred that, the N-type drift region lower boundary in curvature junction termination structures extends to centre with straight line knot eventually
N-type drift region 2 in end structurebCoboundary connects.
It is preferred that, described every sub regions 61、62….6NBetween the inner boundary and external boundary of N-type drift region
It is divided into M subsegment, respectively 61,1, 61,2... 6N,M。
It is preferred that, the dosage of the ion implanting of every sub regions is identical, and in every sub regions, M subsegment
61,1, 61,2... 61MThe dosage of ion implanting successively decrease successively.
It is preferred that, subregion is positioned at length d of one end of external boundary1,1、d1,2….d1,NIdentical, subregion is positioned at
Length d of one end of inner boundary0,1、d0,2。。。。。。d0,N-1、d0,NIdentical, adjacent two sub regions are positioned at N-type drift region inboard boundary
On one end between distance L0,1、L0,2……L0,N、L0,N+1Identical, adjacent two sub regions are positioned at N-type drift region outer boundaries
On one end between distance L1,1、L1,2……L1,N、L1,N+1Identical.
It is preferred that, subregion 6 in curvature junction termination structures1Inner boundary overlap with N-type drift region inner boundary, or
Person's subregion 61Inner boundary in the outside of N-type drift region inner boundary.
It is preferred that, single or many on the surface of N-type drift region or internal formation after junction termination structures knot
Individual p-type doped region 6a,1、6a,2、6a,3….6a,N。
The technical scheme that the present invention is total, in straight line terminal structure and curvature terminal structure connected component, curvature terminal structure
Middle N-type drift region lower boundary extends to and N-type drift region 2 in direct terminal structure to centrebCoboundary connects, and described curvature is eventually
In end structure, the part between the inner and outer boundary of p type island region is divided into multiple disjunct subregion 6 the most successively1、62….6N, and all
Overlap with N-type drift region.Compared to traditional structure, by p type island region in the overlapping injection of N-type drift region, N-type drift can be effectively reduced
Move the peak electric field of district and P type substrate, and can effectively alleviate N-type drift region and cannot be consumed completely by the P type substrate of low concentration
The charge unbalance caused to the greatest extent and the defect of junction electric field curvature effect.In actual process, ion implanting is passed through in p type island region
Being formed, after annealing knot, p type island region can be spread, and due to p type island region, to be proximate to the opening direction of p-shaped substrate increasing, so note
The p type impurity concentration entered is gradually lowered from centre to two ends, so, the concentration of the N-type drift region after overcompensation is therefrom
Between be gradually increased to two ends, therefore reduce the concentration of N-type drift region and P type substrate intersection, make N-type drift region more preferable
Exhausted by P type substrate, thus improve the pressure of device.Meanwhile, according to the difference of the window size of p type island region subregion, inject
P type impurity concentration the most different, impurity can be made to more easily reach balance under different drift region implantation dosages；So,
At straight line terminal structure and curvature terminal structure connected component, the problem of charge unbalance is improved, thus obtains optimization
Breakdown voltage.
Beneficial effects of the present invention is, the present invention is by using multiwindow (multiple subarea to the p type island region in curvature terminal structure
Territory) inject and then N-type drift region concentration is carried out impurity compensation, thus reduce the concentration of N-type drift region so that N-type drift region
Completely depleted by the P type substrate of low concentration, it is to avoid device punctures in advance, thus obtain optimized breakdown voltage.
Accompanying drawing explanation
Fig. 1 is the terminal structure schematic diagram of traditional horizontal high voltage power semiconductor device；
Fig. 2 is that the terminal structure of the horizontal high voltage power device of the present invention is along XY directional profile schematic diagram；
The knot terminal of the horizontal high voltage power device of Fig. 3 present invention be divided into M subsegment along XY directional profile schematic diagram；
3D structure after the knot terminal knot of the horizontal high voltage power semiconductor device of Fig. 4 present invention；
Fig. 5 is the generalized section of the device straight line terminal structure X-direction of the present invention；
Fig. 6 is the generalized section of the device curvature terminal structure Y-direction of the present invention；
1 is drain electrode N+Contact area, 2 is the N-type drift region in curvature junction termination structures, 2bFor the N in straight line junction termination structures
Type drift region, 3 is P type substrate, and 4 is grid polycrystalline silicon, and 5 is gate oxide, and 6 is P-well district, 61、62….6NFor subregion, 7
For source electrode N+Contact area, 8 is source electrode P+Contact area.
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also be by the most different concrete realities
The mode of executing is carried out or applies, the every details in this specification can also based on different viewpoints and application, without departing from
Various modification or change is carried out under the spirit of the present invention.
The junction termination structures of a kind of horizontal high voltage power device, including straight line junction termination structures and curvature junction termination structures；
Described curvature junction termination structures includes the N that drains+Contact area 1, N-type drift region 2, P type substrate 3, grid polycrystalline silicon 4,
P type island region within gate oxide 5, Pwell district 6, N-type drift region 2, source electrode P+Contact area 8, N-type drift region 2 and p type island region include
The square region of bottom and the half-circle area at top, the part between the inner and outer boundary of p type island region is divided into multiple not phase the most successively
Subregion 6 even1、62….6N；Filling N-type drift region 2 between adjacent subarea territory, every sub regions has two summits to fall in N-type
Drift region 2 is on the inner boundary of p-shaped substrate 3, and two summits are positioned on the external boundary of N-type drift region 2, and every sub regions is positioned at
One end of external boundary is less than the one end being positioned at inner boundary, and the length of one end that subregion is positioned at external boundary is respectively d1,1、d1,2…
.d1,N, the length of one end that subregion is positioned at inner boundary is respectively d0,1、d0,2。。。。。。d0,N-1、d0,N, adjacent two sub regions are positioned at
The distance between one end on N-type drift region inboard boundary is respectively L0,1、L0,2……L0,N、L0,N+1, adjacent two sub regions positions
The distance between one end in N-type drift region outer boundaries is respectively L1,1、L1,2……L1,N、L1,N+1；It is grid above p type island region
Oxide layer 5, the surface of gate oxide 5 is grid polycrystalline silicon 4；Drain electrode N in curvature junction termination structures+Contact area 1, N-type
Drift region 2, grid polycrystalline silicon 4, gate oxide 5, Pwell district 6 respectively with the drain electrode N in straight line junction termination structures+Contact area 1, N
Type drift region 2, grid polycrystalline silicon 4, gate oxide 5, Pwell district 6 are connected and form loop configuration；Wherein, curvature knot terminal knot
Drain electrode N in structure+, there are annular grid polysilicon 4, ring-shaped gate oxide layer 5 in surrounding n-type drift region, contact area 12 in N-type drift region 2
With Pwell district 6, LdDrift region length for device.
Described straight line junction termination structures, including: drain electrode N+Contact area 1, N-type drift region 2b, P type substrate 3, grid polycrystalline silicon
4, gate oxide 5, P-well district 6, source electrode N+Contact area 7, source electrode P+Contact area 8；P-well district 6 and N-type drift region 2bIt is positioned at P
The upper strata of type substrate 3, wherein P-well district 6 is positioned at centre, and both sides are N-type drift region 2b, and P-well district 6 and N-type drift region 2b
It is connected；N-type drift region 2bIn be drain electrode N away from the both sides in P-well district 6+Contact area 1, the surface in P-well district 6 has and metal
Change the source electrode N that source electrode is connected+Contact area 7 and source electrode P+Contact area 8, wherein source electrode P+Contact area 8 is positioned at centre, source electrode N+Contact
District 7 is positioned at source electrode P+Both sides, contact area 8；Source electrode N+Contact area 7 and N-type drift region 2bBetween the top on surface, P-well district 6 be
Gate oxide 5, the top on the surface of gate oxide 5 is grid polycrystalline silicon 4, LdFor the drift region length of device, P-well district 6 with
N-type drift region 2bIt is not attached to and both spacing are LP.Preferably, LPConcrete span between 5 microns to 50 microns.
Straight line junction termination structures is possible not only to as single RESURF, it is also possible to for double RESURF structure,
Triple RESURF structure one therein.
Subregion 61、62….6NShare same mask plate with P-well district 6 or separately add mask plate and carry out p type impurity injection
Formed.
N-type drift region 2 lower boundary in curvature junction termination structures extends to and the N-type in straight line junction termination structures to centre
Drift region 2bCoboundary connects.
Described every sub regions 61、62….6NBetween the inner boundary and external boundary of N-type drift region, all it is divided into M son
Section, respectively 61,1, 61,2... 6N,M。
The dosage of the ion implanting of every sub regions is identical, and in every sub regions, M subsegment 61,1, 61,2... 61M's
The dosage of ion implanting successively decreases successively.
Preferably, subregion is positioned at length d of one end of external boundary1,1、d1,2….d1,NIdentical, subregion is positioned at inner boundary
Length d of one end0,1、d0,2。。。。。。d0,N-1、d0,NIdentical, adjacent two sub regions are positioned on N-type drift region inboard boundary
Distance L between end0,1、L0,2……L0,N、L0,N+1Identical, adjacent two sub regions are positioned in N-type drift region outer boundaries
Distance L between end1,1、L1,2……L1,N、L1,N+1Identical.
Preferably, subregion 6 in curvature junction termination structures1Inner boundary overlap with N-type drift region 2 inner boundary, or son
Region 61Inner boundary in the outside of N-type drift region 2 inner boundary.
Or multiple p-type doped region single on the surface of N-type drift region 2 or internal formation after junction termination structures knot
6a,1、6a,2、6a,3….6a,N.Subregion 6 all can be passed through in its width and interval1、62、63。。。。。6NThe width in district and implantation dosage
It is adjusted.
The technical scheme that the present invention is total, in straight line terminal structure and curvature terminal structure connected component, curvature terminal structure
Middle N-type drift region 2 inner boundary extends to and N-type drift region 2 in direct terminal structure to centrebInner boundary connects, described curvature
In terminal structure, the part between the inner and outer boundary of p type island region is divided into multiple disjunct subregion 6 the most successively1、62….6N, and
All overlap with N-type drift region 2.Compared to traditional structure, by p type island region in the overlapping injection of N-type drift region 2, N can be effectively reduced
The peak electric field of type drift region 2 and P type substrate 3, and can effectively alleviate N-type drift region 2 cannot be by the P type substrate of low concentration
3 is completely depleted and the defect of the charge unbalance that causes and junction electric field curvature effect.In actual process, p type island region is passed through
Ion implanting is formed, and after annealing knot, p type island region can be spread, and more comes owing to p type island region district is proximate to the opening direction of p-shaped substrate
The biggest, so the p type impurity concentration injected is gradually lowered from centre to two ends, so, the N-type drift region after overcompensation
The concentration of 2 is gradually increased from centre to two ends, therefore reduces the concentration of N-type drift region 2 and P type substrate 3 intersection, makes
N-type drift region 2 is preferably exhausted by P type substrate 3, thus improves the pressure of device.Meanwhile, according to the window of p type island region subregion
The difference of size, the p type impurity concentration of injection is the most different, and impurity can be made under different drift region implantation dosages to be easier to
Reach balance；So, at straight line terminal structure and curvature terminal structure connected component, the problem of charge unbalance is improved,
Thus obtain optimized breakdown voltage.
The knot terminal of the horizontal high voltage power device of Fig. 3 present invention be divided into M subsegment along XY directional profile schematic diagram；With
Unlike Fig. 2, by the many sub regions 6 in Fig. 2 in this example1、62….6NCarry out segment processing, respectively 61,1, 61,2...
6N,M, wherein, number M of segmentation (M=1,2,3,4 ... .) specifically can modify according to the needs of design, and each segmentation
Between distance can be the same or different.
Fig. 4 be the horizontal high voltage power device of the present invention knot terminal knot after 3D structure；If without mending completely after its knot
Repay p type impurity, then can form single or multiple p-type doped region 6 the internal of N-type drift region 2 or surfacea,1、6a,2、6a,3…
.6a,N, subregion 6 all can be passed through in its width and interval1、62、63。。。。。6NWidth and the implantation dosage in district are adjusted.
Fig. 5 is the generalized section of the device straight line terminal structure X-direction of the present invention；
Fig. 6 is the generalized section of the device curvature terminal structure Y-direction of the present invention；
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any ripe
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage knowing this technology.Cause
This, have usually intellectual and completed under technological thought without departing from disclosed spirit in all art
All equivalence modify or change, must be contained by the claim of the present invention.
Claims (10)
1. the junction termination structures of a horizontal high voltage power device, it is characterised in that: include straight line junction termination structures and curvature knot
Terminal structure；
Described curvature junction termination structures includes the N that drains+Contact area (1), N-type drift region (2), P type substrate (3), grid polycrystalline silicon
(4), gate oxide (5), Pwell district (6), the p type island region of N-type drift region (2) inside, source electrode P+Contact area (8), N-type drift region
(2) and p type island region include bottom square region and the half-circle area at top, the part between the inner and outer boundary of p type island region circumferentially depends on
Secondary it is divided into multiple disjunct subregion (61、62….6N)；N-type drift region (2), every sub regions is filled between adjacent subarea territory
Having two summits to fall in N-type drift region (2) on the inner boundary of p-shaped substrate (3), two summits are positioned at N-type drift region (2)
On external boundary, every sub regions is positioned at one end of external boundary and is less than the one end being positioned at inner boundary, and subregion is positioned at the one of external boundary
The length of end is respectively d1,1、d1,2….d1,N, the length of one end that subregion is positioned at inner boundary is respectively d0,1、d0,2。。。。。。
d0,N-1、d0,N, the distance between adjacent two sub regions one end on N-type drift region inboard boundary is respectively L0,1、
L0,2……L0,N、L0,N+1, the distance between adjacent two sub regions one end in N-type drift region outer boundaries is respectively
L1,1、L1,2……L1,N、L1,N+1；Top, Pwell district (6) is gate oxide (5), and the surface of gate oxide (5) is that grid is many
Crystal silicon (4)；Drain electrode N in curvature junction termination structures+Contact area (1), N-type drift region (2), grid polycrystalline silicon (4), gate oxide
(5), Pwell district (6) respectively with the drain electrode N in straight line junction termination structures+Contact area (1), N-type drift region (2), grid polycrystalline silicon
(4), gate oxide (5), Pwell district (6) be connected and form loop configuration, wherein, the drain electrode N in curvature junction termination structures+Connect
Touch district (1) surrounding n-type drift region (2), have in N-type drift region (2) annular grid polysilicon (4), ring-shaped gate oxide layer (5) and
Pwell district (6), LdDrift region length for device.
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: straight line knot terminal knot
Structure is single RESURF, double RESURF, triple RESURF structure one therein.
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: described straight line knot terminal knot
Structure includes: drain electrode N+Contact area (1), N-type drift region (2b), P type substrate (3), grid polycrystalline silicon (4), gate oxide (5), P-
Well district (6), source electrode N+Contact area (7), source electrode P+Contact area (8)；P-well district (6) and N-type drift region (2b) it is positioned at p-type lining
The upper strata at the end (3), wherein P-well district (6) are positioned at centre, and both sides are N-type drift region (2b), and P-well district (6) and N-type drift
Move district (2b) be connected；N-type drift region (2bIn), the both sides away from P-well district (6) are drain electrode N+Contact area (1), P-well district (6)
Surface there is the source electrode N being connected with metallizing source+Contact area (7) and source electrode P+Contact area (8), wherein source electrode P+Contact area
(8) it is positioned at centre, source electrode N+Contact area (7) is positioned at source electrode P+Contact area (8) both sides；Source electrode N+Contact area (7) and N-type drift region
(2bThe top on P-well district (6) surface between) is gate oxide (5), and the top on the surface of gate oxide (5) is that grid is many
Crystal silicon (4), LdFor the drift region length of device, P-well district (6) and N-type drift region (2b) be not attached to and both spacing are LP。
The junction termination structures of horizontal high voltage power device the most according to claim 3, it is characterised in that: subregion (61、62…
.6N) and P-well district (6) share same mask plate or separately add mask plate carry out p type impurity inject formed.
The junction termination structures of horizontal high voltage power device the most according to claim 3, it is characterised in that: curvature knot terminal knot
N-type drift region (2) lower boundary in structure extends to centre and the N-type drift region (2 in straight line junction termination structuresb) coboundary is even
Connect.
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: described every height
Region (61、62….6N) between the inner boundary and external boundary of N-type drift region, it is divided into M subsegment, it is respectively (61,1, 61,2...
6N,M)。
The junction termination structures of horizontal high voltage power device the most according to claim 6, it is characterised in that: every sub regions
The dosage of ion implanting is identical, and in every sub regions, M subsegment (61,1, 61,2... 61M) ion implanting dosage successively
Successively decrease.
The junction termination structures of horizontal high voltage power device the most according to claim 3, it is characterised in that: outside subregion is positioned at
Length d of the one end on border1,1、d1,2….d1,NIdentical, subregion is positioned at length d of one end of inner boundary0,1、d0,2。。。。。。
d0,N-1、d0,NIdentical, between adjacent two sub regions one end on N-type drift region inboard boundary distance L0,1、L0,2……
L0,N、L0,N+1Identical, between adjacent two sub regions one end in N-type drift region outer boundaries distance L1,1、L1,2……
L1,N、L1,N+1Identical.
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: curvature knot terminal knot
Subregion (6 in structure1) inner boundary overlap with N-type drift region (2) inner boundary, or subregion (61) inner boundary N-type drift about
The outside of district (2) inner boundary.
The junction termination structures of horizontal high voltage power device the most according to claim 1, it is characterised in that: junction termination structures
Or multiple p-type doped region (6 single on the surface of N-type drift region (2) or internal formation after knota,1、6a,2、6a,3…
.6a,N)。
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| US20040212032A1 (en) * | 2000-04-27 | 2004-10-28 | Fuji Electric Co., Ltd. | Lateral super-junction semiconductor device |
| US20050017300A1 (en) * | 2003-07-11 | 2005-01-27 | Salama C. Andre T. | Super junction / resurf ldmost (sjr-LDMOST) |
| CN102244092A (en) * | 2011-06-20 | 2011-11-16 | 电子科技大学 | Junction termination structure of transverse high-pressure power semiconductor device |
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