CN106098634A - Aluminum-base silicon carbide electronic package base plate, mould and manufacture method - Google Patents
Aluminum-base silicon carbide electronic package base plate, mould and manufacture method Download PDFInfo
- Publication number
- CN106098634A CN106098634A CN201610477095.5A CN201610477095A CN106098634A CN 106098634 A CN106098634 A CN 106098634A CN 201610477095 A CN201610477095 A CN 201610477095A CN 106098634 A CN106098634 A CN 106098634A
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- base plate
- aluminum
- electronic package
- silicon carbide
- plate body
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D17/00—Pressure die casting or injection die casting, i.e. casting in which the metal is forced into a mould under high pressure
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
Abstract
A kind of aluminum-base silicon carbide electronic package base plate, it is characterised in that: this electronic package base plate is by base plate body and is arranged on base plate the radiating piece being made into integration with base plate and forms, and described base plate body is rectangular；Its left part is provided with rectangle extension, the heat build-up circular groove being arranged above with annular at base plate body, centre on base plate body arranges radiating area, radiating piece is set in radiating area, radiating piece is distributed on base plate body, described base plate body upper end and lower end are respectively provided with many group installing holes and spacing fixing hole, and installing hole and the spacing fixing hole of upper end are symmetrical arranged with the installing hole of lower end and spacing fixing hole.Beneficial effects of the present invention: the aluminum-base silicon carbide electronic package base plate of preparation has and overcomes the defect that production efficiency in prior art is low, the feature of environmental protection is poor and energy utilization rate is low, simple to realize low cost, technique, the advantage that yield rate is high.This product has thermal conductive resin simultaneously, also has certain intensive properties.
Description
Technical field
The present invention relates to a kind of aluminum-base silicon carbide electronic component, especially relate to a kind of aluminum-base silicon carbide electronic package
Base plate and manufacture method..
Background technology
At present, along with new-energy automobile, inter-city passenger rail development, a kind of New insulated grid type power tube, i.e. IGBT is combined
Full-control type voltage driven type power electronic devices type audion, is applied to alternating current generator, converter, Switching Power Supply, power for illumination
The field such as road, Traction Drive, he is naturally entering of heavy current, high-voltage applications and fast terminal equipment vertical power MOSFFT
Change, and as the electronic package base plate of IGBT, should have stronger bending strength, high elastic modulus, have higher heat again
Conductivity, low linear expansion coefficient, this high combination property new material, heat transmission package floor is the requisite adnexa of IGBT
One of.Its main failure forms has deformation, cracking.If electronic package base plate disabler, cause a whole set of IGBT function
Losing efficacy, hazardness is very serious, even can bring casualties.
Electronic package base plate in the market mainly uses aluminum bag carbofrax material technique, and cost is high, technique is multiple
Miscellaneous, yield rate is low.
Summary of the invention
It is an object of the invention to provide a kind of aluminum-base silicon carbide electronic package base plate and manufacture method, be a kind of half
The casting technique of solid-state, in order to solve to make this problem of silicon-carbide particle uniform stirring, this technique adds magnetic vibrations stirring.
The technical solution adopted for the present invention to solve the technical problems is: at the bottom of a kind of aluminum-base silicon carbide electronic package
Plate, it is characterised in that: this electronic package base plate is by dissipating that base plate body and being arranged on base plate is made into integration with base plate
Warmware forms, and described base plate body is rectangular；Its left part is provided with rectangle extension, is arranged above with heat build-up at base plate body
Ditch, the centre on base plate body arranges radiating area, arranges radiating piece in radiating area, and described radiating piece is uniform
On base plate body, described base plate body upper end and lower end are respectively provided with many group installing holes and spacing fixing hole, upper end
Installing hole and spacing fixing hole are symmetrical arranged with the installing hole of lower end and spacing fixing hole.
Described radiating piece is column type, taper type, is placed equidistant between each radiating piece.
A kind of making mould of aluminum-base silicon carbide electronic package base plate, it is characterised in that: include bed die, the described end
Mould is provided with baseplate molding groove, in the middle part of baseplate molding groove, is provided with radiating piece shaping area, the uniform radiating piece molding of radiating piece shaping area
Groove, the upper edge in baseplate molding groove and lower edge are provided with many group installing hole shaping columns and spacing fixing hole shaping column, institute
The left end of the baseplate molding groove stated is provided with extension forming tank.
The manufacture method of a kind of aluminum-base silicon carbide electronic package base plate: described aluminum-base silicon carbide electronic component envelope
The parts by weight of each component of dress base plate are as follows: aluminium powder 72-74 part, carbon dust 0.8-1.0 part, silica flour 22-24 part, manganese powder 0.8-
1.2 parts, phosphorus powder 0.1-0.4 part, sulfur powder 0.08-0.12 part, tetrafluoro furfuryl alcohol 0.3-0.4 part；Described aluminum base is uniformly distributed
Silicon-carbide particle；
Its step of manufacture method of described aluminum-base silicon carbide electronic package base plate is as follows:
1) aluminium powder is smelted, and in smelting furnace, aluminum stirring can cause aluminium alloy temperature loss, improves aluminum coolant-temperature gage, the temperature that smelting furnace is smelted
Degree is 740 DEG C ± 10 DEG C；
2) after aluminum alloy melting under liquid situation, by silica flour 120-200um, by automaton, add in aluminum liquid；
3) by automatic mixing apparatus, by carbon dust, manganese powder, phosphorus powder, sulfur powder, the mixing of tetrafluoro furfuryl alcohol, after stirring 5 minutes；Put into baking
In case, running under the temperature conditions of 250 DEG C ± 2 DEG C, dried 30 minutes-45 minutes, after taking-up, pelletize is sieved, and obtains
Mixture powder；
4) silica flour and mixture powder are entered in automatic adding device and add in high alumina water according to feed rate；Semisolid liquid
When temperature reaches 680 DEG C ± lO DEG C, start to pour into mould, the mixed powder in mould is suppressed；Use 40MPa pressure pair
Mixed powder carries out precompressed, heats mould, by room temperature to 350 in 15 minutes under vacuum and 40MPa pressure maintain
DEG C and keep 20 minutes；In 20 minutes, it is warming up to 600 DEG C by 450 DEG C again and keeps 30 minutes, the most repeatedly
Insulation stopped heating after 2～3 hours altogether；
5) after mould cooling, die sinking taking-up pouring piece:
6) surface oxidation treatment.
Beneficial effects of the present invention: the aluminum-base silicon carbide electronic package base plate of preparation has to overcome in prior art gives birth to
Produce the defect that efficiency is low, the feature of environmental protection is poor and energy utilization rate is low, to realize low cost, technique simply, the advantage that yield rate is high.Should
Product has thermal conductive resin simultaneously, also has certain intensive properties.
Below with reference to drawings and Examples, the present invention is described in detail.
Accompanying drawing explanation
The structural representation of Fig. 1 present invention.
The making mould structure schematic diagram of Fig. 2 present invention
The microstructure schematic diagram of aluminum-base silicon carbide electronic package base plate prepared by Fig. 3 present invention.
Fig. 4 is the Making programme figure of the present invention.
Detailed description of the invention
Embodiment 1, as it is shown in figure 1, a kind of aluminum-base silicon carbide electronic package base plate, it is characterised in that: this electronic component seals
Dress base plate is made up of base plate body 1 and the radiating piece 2 that is made into integration with base plate, and described base plate body 1 is rectangular；Its left end
Portion is provided with rectangle extension 3, is arranged above with heat build-up ditch 4 at base plate body 1, and the centre on base plate body 1 sets
Putting radiating area 5, arrange radiating piece 2 in radiating area 5, described radiating piece 2 is distributed on base plate body 1, and described base plate is originally
Body 1 upper end and lower end are respectively provided with many group installing holes 6 and spacing fixing hole 7, the installing hole 6 of upper end and spacing fixing hole 7
It is symmetrical arranged with the installing hole of lower end and spacing fixing hole.
Described radiating piece 2 in column type, taper type, be placed equidistant between each radiating piece.
Embodiment 2, as in figure 2 it is shown, the making mould of a kind of aluminum-base silicon carbide electronic package base plate, its feature exists
In: include bed die 8, described bed die 8 is provided with baseplate molding groove 9, in the middle part of baseplate molding groove 9, is provided with radiating piece shaping area, dissipate
Warmware shaping area uniform radiating piece forming tank 10, the upper edge in baseplate molding groove 9 is provided with many group installing holes and becomes with lower edge
Type post 11 and spacing fixing hole shaping column 12, the left end of described baseplate molding groove 9 is provided with extension forming tank 13.
Owing to increasing carborundum element in material, common process produces can not meet product requirement, due to carborundum fusing point
(1730 DEG C) are significantly larger than 740 DEG C, are a kind of semi-solid casting techniques, and in order to make silicon-carbide particle uniformity, stirring foot must
Palpus technological requirement, for solving this problem, this technique increases magnetic vibrations stirring.
Embodiment 3, as shown in Figure 3,4, the manufacture method of a kind of aluminum-base silicon carbide electronic package base plate: described aluminum
The parts by weight of each component of base silicon carbide electronic package base plate are as follows: aluminium powder 72-74 part, carbon dust 0.8-1.0 part, silica flour
22-24 part, manganese powder 0.8-1.2 part, phosphorus powder 0.1-0.4 part, sulfur powder 0.08-0.12 part, tetrafluoro furfuryl alcohol 0.3-0.4 part；Described
Aluminum base in be uniformly distributed silicon-carbide particle；
Its step of manufacture method of described aluminum-base silicon carbide electronic package base plate is as follows: include that melting, alloy add
Device, be provided with carborundum storage bin, automatic adding device, automatic stirrer, by casting ladle, directly be poured onto mould, cooling after become
Product.
Concrete:
1) aluminium powder is smelted, and in smelting furnace, aluminum stirring can cause aluminium alloy temperature loss, improves aluminum coolant-temperature gage, the temperature that smelting furnace is smelted
Degree is 740 DEG C ± 10 DEG C；
2) after aluminum alloy melting under liquid situation, by silica flour 120-200um, by automaton, add in aluminum liquid；
3) by automatic mixing apparatus, by carbon dust, manganese powder, phosphorus powder, sulfur powder, the mixing of tetrafluoro furfuryl alcohol, after stirring 5 minutes；Put into baking
In case, running under the temperature conditions of 250 DEG C ± 2 DEG C, dried 30 minutes-45 minutes, after taking-up, pelletize is sieved, and obtains
Mixture powder；
4) silica flour and mixture powder are entered in automatic adding device and add in high alumina water according to feed rate；Semisolid liquid
When temperature reaches 680 DEG C ± lO DEG C, start to pour into mould, the mixed powder in mould is suppressed；Use 40MPa pressure pair
Mixed powder carries out precompressed, heats mould, by room temperature to 350 in 15 minutes under vacuum and 40MPa pressure maintain
DEG C and keep 20 minutes；In 20 minutes, it is warming up to 600 DEG C by 450 DEG C again and keeps 30 minutes, the most repeatedly
Insulation stopped heating after 2～3 hours altogether；
5), after mould cooling, pouring piece is taken out in die sinking；
6) surface oxidation treatment.
Test data such as following table:
Table can be seen that, silica flour amount increases elastic modelling quantity and the bending strength promoting material, but the line directly affecting material is swollen
Coefficient and heat conductivity.
The performance parameter index of this specification aluminum-base silicon carbide material is:
Line expansion factor: 7.59(20-100 DEG C)；
Elastic modelling quantity: 208 GPa；
Bending strength: 256MPa；
Heat conductivity: 186.02 W/M.K；
It not only has thermal conductive resin, also has the material of certain intensity.
Claims (4)
1. an aluminum-base silicon carbide electronic package base plate, it is characterised in that: this electronic package base plate is by base plate body
And it being arranged on base plate the radiating piece composition being made into integration with base plate, described base plate body is rectangular；Its left part is provided with
Rectangle extension, is arranged above with heat build-up ditch at base plate body, and the centre on base plate body arranges radiating area,
Arranging radiating piece in radiating area, described radiating piece is distributed on base plate body, and described base plate body upper end and lower end are each
It is provided with many group installing holes and spacing fixing hole, the installing hole of upper end and spacing fixing hole and the installing hole of lower end and spacing
Fixing hole is symmetrical arranged.
2. aluminum-base silicon carbide electronic package base plate as claimed in claim 1, it is characterised in that: described radiating piece is circle
Column type, taper type, be placed equidistant between each radiating piece.
3. the making mould of an aluminum-base silicon carbide electronic package base plate, it is characterised in that: include bed die, described bed die
In be provided with baseplate molding groove, be provided with radiating piece shaping area in the middle part of baseplate molding groove, radiating piece shaping area uniform radiating piece forming tank,
Upper edge in baseplate molding groove and lower edge are provided with many group installing hole shaping columns and spacing fixing hole shaping column, described
The left end of baseplate molding groove be provided with extension forming tank.
4. the manufacture method of an aluminum-base silicon carbide electronic package base plate: described aluminum-base silicon carbide electronic package
The parts by weight of each component of base plate are as follows: aluminium powder 72-74 part, carbon dust 0.8-1.0 part, silica flour 22-24 part, manganese powder 0.8-1.2
Part, phosphorus powder 0.1-0.4 part, sulfur powder 0.08-0.12 part, tetrafluoro furfuryl alcohol 0.3-0.4 part；Described aluminum base is uniformly distributed carbon
Silicon carbide particle；
Its step of manufacture method of described aluminum-base silicon carbide electronic package base plate is as follows:
1) aluminium powder is smelted, and in smelting furnace, aluminum stirring can cause aluminium alloy temperature loss, improves aluminum coolant-temperature gage, the temperature that smelting furnace is smelted
Degree is 740 DEG C ± 10 DEG C；
2) after aluminum alloy melting under liquid situation, by silica flour 120-200um, by automaton, add in aluminum liquid,
3) by automatic mixing apparatus, by carbon dust, manganese powder, phosphorus powder, sulfur powder, the mixing of tetrafluoro furfuryl alcohol, after stirring 5 minutes；Put into baking
In case, running under the temperature conditions of 250 DEG C ± 2 DEG C, dried 30 minutes-45 minutes, after taking-up, pelletize is sieved, and obtains
Mixture powder；
4) silica flour and mixture powder are entered in automatic adding device and add in high alumina water according to feed rate；Semisolid liquid temperature
When degree reaches 680 DEG C ± lO DEG C, start to pour into mould, the mixed powder in mould is suppressed；Use 40MPa pressure to mixed
Close powder and carry out precompressed, mould is heated, by room temperature to 350 DEG C in 15 minutes under vacuum and 40MPa pressure maintain
And keep 20 minutes；In 20 minutes, it is warming up to 600 DEG C by 450 DEG C again and keeps 30 minutes, being the most repeatedly total to
Heating is stopped after being incubated 2～3 hours；
5), after mould cooling, pouring piece is taken out in die sinking；
6) surface oxidation treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610477095.5A CN106098634A (en) | 2016-06-27 | 2016-06-27 | Aluminum-base silicon carbide electronic package base plate, mould and manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610477095.5A CN106098634A (en) | 2016-06-27 | 2016-06-27 | Aluminum-base silicon carbide electronic package base plate, mould and manufacture method |
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| CN106098634A true CN106098634A (en) | 2016-11-09 |
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|---|---|---|---|
| CN201610477095.5A Pending CN106098634A (en) | 2016-06-27 | 2016-06-27 | Aluminum-base silicon carbide electronic package base plate, mould and manufacture method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111496226A (en) * | 2020-05-26 | 2020-08-07 | 天能电池(芜湖)有限公司 | Mould base for heat absorption and heat dissipation treatment of mould cavity |
| CN111668103A (en) * | 2020-06-19 | 2020-09-15 | 中国电子科技集团公司第二十九研究所 | Preparation method of connector hole of aluminum silicon carbide electronic packaging box body |
| CN112601418A (en) * | 2020-11-20 | 2021-04-02 | 上海航天控制技术研究所 | Integrated heat conduction microstructure of space ray apparatus structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111496226A (en) * | 2020-05-26 | 2020-08-07 | 天能电池(芜湖)有限公司 | Mould base for heat absorption and heat dissipation treatment of mould cavity |
| CN111668103A (en) * | 2020-06-19 | 2020-09-15 | 中国电子科技集团公司第二十九研究所 | Preparation method of connector hole of aluminum silicon carbide electronic packaging box body |
| CN112601418A (en) * | 2020-11-20 | 2021-04-02 | 上海航天控制技术研究所 | Integrated heat conduction microstructure of space ray apparatus structure |
| CN112601418B (en) * | 2020-11-20 | 2022-10-18 | 上海航天控制技术研究所 | Integrated heat conduction microstructure of space ray apparatus structure |
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