CN111519059A - Method for preparing high-performance aluminum-based silicon carbide - Google Patents
Method for preparing high-performance aluminum-based silicon carbide Download PDFInfo
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- CN111519059A CN111519059A CN202010409825.4A CN202010409825A CN111519059A CN 111519059 A CN111519059 A CN 111519059A CN 202010409825 A CN202010409825 A CN 202010409825A CN 111519059 A CN111519059 A CN 111519059A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1005—Pretreatment of the non-metallic additives
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/10—Alloys containing non-metals
- C22C1/1036—Alloys containing non-metals starting from a melt
- C22C1/1047—Alloys containing non-metals starting from a melt by mixing and casting liquid metal matrix composites
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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Abstract
The invention discloses a method for preparing high-performance aluminum-based silicon carbide, which relates to the technical field of aluminum-based silicon carbide production and comprises the following steps: crushing and grinding, pulping, aluminum powder dissolving, stirring and mixing, grouting, chemical nickel plating and cleaning and drying, in the process of aluminum-based silicon carbide production, when the operation of modified silicon carbide slurry and aluminum liquid mixing is involved, a vacuum stirrer is adopted to replace a common mechanical stirrer adopted in the prior art, the problem of uneven material mixing caused by gas in a stirrer mixing chamber can be effectively avoided, and after the grouting operation executed in the traditional process, a chemical electroplating treatment process is newly added, namely, a layer of nickel metal ions is electroplated on the surface of the formed aluminum-based silicon carbide, so that the surface of the aluminum-based silicon carbide can be smoother and brighter, the stress of the internal structure of the aluminum-based silicon carbide is reduced, and the bonding force of the aluminum metal and the ceramic metallization layer of the silicon carbide is enhanced.
Description
Technical Field
The invention relates to the technical field of aluminum-based silicon carbide production, in particular to a method for preparing high-performance aluminum-based silicon carbide.
Background
With the leap of LED manufacturing technology and the requirement of higher performance of devices, the packaging material is more updated and higher, the traditional material is no longer suitable for packaging high power density devices, and the aluminum, copper, Kovar or semiconductor materials and the like which are used in large quantities in the past can not reach good heat conduction indexes and light requirements, and the cost is higher, so that the requirement of high power density can not be met. This makes the electronic device thermal management problem a bottleneck.
The thermal management problem of the electronic device is not well solved, the thermal failure of the electronic device can be caused, so that a packaging body and a chip are cracked due to thermal expansion, the heat dissipation performance of the chip is poor, the operation is stopped, when the difference of the thermal expansion coefficients of two contact materials reaches 12ppm/K, the thermal fatigue failure can occur only after 100 times of thermal cycles, and in the application of a high-power LED, the current quantity of a high-brightness product is increased (the current is developed from 0.3A in the early stage to about 1A at present) or the high heat in a unit area is generated due to the high power (the current is developed from 1W in the early stage to about 5W at present). At present, the photoelectric conversion efficiency is only about 20% of light generated per 100% of energy, and 80% of energy is lost as heat energy, so that the heat is the maximum consumption of energy. However, without removing excess heat, the LED lifetime and performance are compromised, and therefore, in order to ensure the reliability of such devices, it is necessary to solve the problem of thermal management, and the best way to solve this bottleneck is to improve the performance of the encapsulation material by changing.
The aluminum-based silicon carbide serving as the current mainstream LED packaging material has incomparable advantages of other materials in solving the problem of high-power LED chip packaging heat dissipation, is the most ideal heat management solution at present, can fully ensure the efficiency and reliability of a high-power LED, and is suitable for high-power LED chip packaging heat dissipation as the aluminum-based silicon carbide serving as the ideal microelectronic packaging material.
However, the aluminum-based silicon carbide material currently used in the LED packaging technology has the following problems in the practical use process due to the technical defects of the material in the production process:
1. in the method, because the silicon carbide particle reinforcement and the aluminum alloy base liquid cannot be mixed in a vacuum environment in the stirring process, the problem of non-uniformity of the finished product aluminum-based silicon carbide obtained in the later period in the density aspect is caused, and the packaging effect of an LED chip is further influenced;
2. in the above production process of the aluminum-based silicon carbide, after a finished product of the aluminum-based silicon carbide is obtained, the surface of the aluminum-based silicon carbide is dark and rough due to the lack of chemical nickel plating operation, the attractiveness of the product is affected, the internal stress of the internal structure of the aluminum-based silicon carbide is large, and the bonding force between aluminum metal and a silicon carbide ceramic metallization layer is weak.
In view of the above, those skilled in the art have proposed a method for preparing high-performance aluminum-based silicon carbide.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method for preparing high-performance aluminum-based silicon carbide, which solves the problems in the background art.
In order to achieve the purpose, the invention is realized by the following technical scheme: a method for preparing high-performance aluminum-based silicon carbide comprises the following steps:
s1, crushing and grinding: taking a silicon carbide fixing material and metal aluminum, and respectively and sequentially crushing and grinding the silicon carbide and the metal aluminum to obtain powdery silicon carbide and metal aluminum particles;
s2, pulping: adding the silicon carbide powder obtained in the step S1 into a mixed solution of a coupling agent and deionized water, and mechanically stirring until the silicon carbide powder is completely dissolved in the mixed solution to obtain modified silicon carbide slurry;
s3, aluminum powder dissolution: adding the metal aluminum particles obtained in the step S1 into a smelting furnace until the particle metal aluminum is completely dissolved to obtain molten aluminum liquid;
s4, stirring and mixing: sequentially adding the modified silicon carbide slurry obtained in the step S2 and the aluminum liquid obtained in the step S3 into a stirring chamber of a vacuum stirrer until the modified silicon carbide slurry is completely dispersed in the aluminum liquid to obtain molten aluminum-based silicon carbide;
s5, grouting: injecting the aluminum-based silicon carbide molten liquid obtained in the step S4 into a forming mold, and cooling to obtain solid aluminum-based silicon carbide;
s6, chemical nickel plating: putting the solid aluminum-based silicon carbide cooled to room temperature in the step S5 into an electroplating bath containing electroplating solution, and introducing current to obtain aluminum-based silicon carbide with a layer of metal nickel on the surface;
s7, cleaning and drying: and (5) transferring the aluminum-based silicon carbide obtained in the step (S6) to flowing water, washing, removing the surface electroplating liquid, transferring to drying equipment, and drying.
Preferably, in step S1, the granularity of the silicon carbide and the granularity of the metal aluminum are both 300 meshes.
Preferably, the coupling agent is at least one or a mixture of methyltrimethoxysilane, methyltriethoxysilane and octyltriethoxysilane.
Preferably, the volume ratio of the coupling agent to the deionized water is 1:8, and the mass ratio of the silicon carbide powder to the mixed solution is 1: 2.
Preferably, in step S2, the rotation speed of the mechanical stirring is at least 300r/min, and the stirring time is not less than 45 min.
Preferably, the volume ratio of the modified silicon carbide slurry to the aluminum liquid in the step S4 is 3: 1.
Preferably, in step S6, the plating solution is a Ni — P solution.
Advantageous effects
The invention provides a method for preparing high-performance aluminum-based silicon carbide. Compared with the prior art, the method has the following beneficial effects:
1. according to the method for preparing the high-performance aluminum-based silicon carbide, in the production process of the aluminum-based silicon carbide, when the operation of mixing modified silicon carbide slurry and aluminum liquid is involved, a vacuum stirrer is used for replacing a common mechanical stirrer used in the prior art, and when the vacuum stirrer is used for mixing the substances, the problems that materials are not uniformly mixed due to gas in a mixing cavity of the stirrer, and further the use effect of the aluminum-based silicon carbide produced in the later stage is not ideal can be effectively solved.
2. According to the method for preparing the high-performance aluminum-based silicon carbide, after the grouting operation is performed in the traditional process, a chemical electroplating treatment process is additionally arranged, namely a layer of nickel metal ions is electroplated on the surface of the formed aluminum-based silicon carbide, so that the surface of the aluminum-based silicon carbide is smoother and brighter, the stress of the internal structure of the aluminum-based silicon carbide is reduced, and the bonding force of aluminum metal and a silicon carbide ceramic metallization layer is enhanced.
Drawings
FIG. 1 is a schematic flow chart of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a technical solution: a method for preparing high-performance aluminum-based silicon carbide comprises the following steps:
s1, crushing and grinding: taking a silicon carbide fixing material and metal aluminum, and respectively and sequentially crushing and grinding the silicon carbide and the metal aluminum to obtain powdery silicon carbide and metal aluminum particles;
s2, pulping: adding the silicon carbide powder obtained in the step S1 into a mixed solution of a coupling agent and deionized water, and mechanically stirring until the silicon carbide powder is completely dissolved in the mixed solution to obtain modified silicon carbide slurry;
s3, aluminum powder dissolution: adding the metal aluminum particles obtained in the step S1 into a smelting furnace until the particle metal aluminum is completely dissolved to obtain molten aluminum liquid;
s4, stirring and mixing: sequentially adding the modified silicon carbide slurry obtained in the step S2 and the aluminum liquid obtained in the step S3 into a stirring chamber of a vacuum stirrer until the modified silicon carbide slurry is completely dispersed in the aluminum liquid to obtain molten aluminum-based silicon carbide;
s5, grouting: injecting the aluminum-based silicon carbide molten liquid obtained in the step S4 into a forming mold, and cooling to obtain solid aluminum-based silicon carbide;
s6, chemical nickel plating: putting the solid aluminum-based silicon carbide cooled to room temperature in the step S5 into an electroplating bath containing electroplating solution, and introducing current to obtain aluminum-based silicon carbide with a layer of metal nickel on the surface;
s7, cleaning and drying: and (5) transferring the aluminum-based silicon carbide obtained in the step (S6) to flowing water, washing, removing the surface electroplating liquid, transferring to drying equipment, and drying.
Preferably, in step S1, the particle sizes of the silicon carbide and the aluminum metal are both 300 meshes.
Preferably, the coupling agent is methyltrimethoxysilane.
Preferably, the volume ratio of the coupling agent to the deionized water is 1:8, and the mass ratio of the silicon carbide powder to the mixed solution is 1: 2.
Preferably, in step S2, the rotation speed of the mechanical stirring is at least 300r/min, and the stirring time is not less than 45 min.
Preferably, the volume ratio of the modified silicon carbide slurry to the aluminum liquid in the step S4 is 3: 1.
Preferably, in step S6, the plating solution is a Ni-P solution.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. A method for preparing high-performance aluminum-based silicon carbide is characterized by comprising the following steps:
s1, crushing and grinding: taking a silicon carbide fixing material and metal aluminum, and respectively and sequentially crushing and grinding the silicon carbide and the metal aluminum to obtain powdery silicon carbide and metal aluminum particles;
s2, pulping: adding the silicon carbide powder obtained in the step S1 into a mixed solution of a coupling agent and deionized water, and mechanically stirring until the silicon carbide powder is completely dissolved in the mixed solution to obtain modified silicon carbide slurry;
s3, aluminum powder dissolution: adding the metal aluminum particles obtained in the step S1 into a smelting furnace until the particle metal aluminum is completely dissolved to obtain molten aluminum liquid;
s4, stirring and mixing: sequentially adding the modified silicon carbide slurry obtained in the step S2 and the aluminum liquid obtained in the step S3 into a stirring chamber of a vacuum stirrer until the modified silicon carbide slurry is completely dispersed in the aluminum liquid to obtain molten aluminum-based silicon carbide;
s5, grouting: injecting the aluminum-based silicon carbide molten liquid obtained in the step S4 into a forming mold, and cooling to obtain solid aluminum-based silicon carbide;
s6, chemical nickel plating: putting the solid aluminum-based silicon carbide cooled to room temperature in the step S5 into an electroplating bath containing electroplating solution, and introducing current to obtain aluminum-based silicon carbide with a layer of metal nickel on the surface;
s7, cleaning and drying: and (5) transferring the aluminum-based silicon carbide obtained in the step (S6) to flowing water, washing, removing the surface electroplating liquid, transferring to drying equipment, and drying.
2. The method of claim 1, wherein in step S1, the granularity of the silicon carbide and the aluminum metal is 300 meshes.
3. The method for preparing high-performance aluminum-based silicon carbide according to claim 1, wherein the coupling agent is at least one or more of methyltrimethoxysilane, methyltriethoxysilane and octyltriethylaminosilane.
4. The method for preparing high-performance aluminum-based silicon carbide according to claim 3, wherein the volume ratio of the coupling agent to the deionized water is 1:8, and the mass ratio of the silicon carbide powder to the mixed solution is 1: 2.
5. The method of claim 1, wherein in step S2, the rotation speed of the mechanical stirring is at least 300r/min, and the stirring time is not less than 45 min.
6. The method for preparing high-performance aluminum-based silicon carbide according to claim 1, wherein the volume ratio of the modified silicon carbide slurry to the aluminum liquid in the step S4 is 3: 1.
7. The method of claim 1, wherein the electroplating solution in step S6 is a Ni-P solution.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098634A (en) * | 2016-06-27 | 2016-11-09 | 安徽汉升新金属技术有限公司 | Aluminum-base silicon carbide electronic package base plate, mould and manufacture method |
| CN114804884A (en) * | 2022-04-25 | 2022-07-29 | 湖南太子新材料科技有限公司 | High-performance silicon carbide ceramic material and preparation method thereof |
| CN115141951A (en) * | 2022-08-08 | 2022-10-04 | 河南瀚银光电科技股份有限公司 | Method for preparing high-performance aluminum-based silicon carbide |
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Cited By (3)
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|---|---|---|---|---|
| CN106098634A (en) * | 2016-06-27 | 2016-11-09 | 安徽汉升新金属技术有限公司 | Aluminum-base silicon carbide electronic package base plate, mould and manufacture method |
| CN114804884A (en) * | 2022-04-25 | 2022-07-29 | 湖南太子新材料科技有限公司 | High-performance silicon carbide ceramic material and preparation method thereof |
| CN115141951A (en) * | 2022-08-08 | 2022-10-04 | 河南瀚银光电科技股份有限公司 | Method for preparing high-performance aluminum-based silicon carbide |
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