CN111218626A - Aluminum-based silicon carbide high-density packaged semiconductor composite material and preparation method thereof - Google Patents
Aluminum-based silicon carbide high-density packaged semiconductor composite material and preparation method thereof Download PDFInfo
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- CN111218626A CN111218626A CN202010128507.0A CN202010128507A CN111218626A CN 111218626 A CN111218626 A CN 111218626A CN 202010128507 A CN202010128507 A CN 202010128507A CN 111218626 A CN111218626 A CN 111218626A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 81
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 58
- 239000002131 composite material Substances 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims abstract description 27
- 239000000843 powder Substances 0.000 claims abstract description 27
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004917 carbon fiber Substances 0.000 claims abstract description 14
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 14
- 239000010955 niobium Substances 0.000 claims abstract description 14
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 14
- 230000002787 reinforcement Effects 0.000 claims abstract description 14
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- 239000010936 titanium Substances 0.000 claims abstract description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 229910052742 iron Inorganic materials 0.000 claims abstract description 12
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 12
- 239000011777 magnesium Substances 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims description 9
- 239000011246 composite particle Substances 0.000 claims description 7
- 239000011258 core-shell material Substances 0.000 claims description 7
- 239000007822 coupling agent Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 7
- 238000001513 hot isostatic pressing Methods 0.000 claims description 7
- 239000002078 nanoshell Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 5
- 235000015895 biscuits Nutrition 0.000 description 4
- 238000010345 tape casting Methods 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C47/00—Making alloys containing metallic or non-metallic fibres or filaments
- C22C47/14—Making alloys containing metallic or non-metallic fibres or filaments by powder metallurgy, i.e. by processing mixtures of metal powder and fibres or filaments
-
- B22F1/0003—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C49/00—Alloys containing metallic or non-metallic fibres or filaments
- C22C49/02—Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
- C22C49/04—Light metals
- C22C49/06—Aluminium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
- B22F2009/043—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by ball milling
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Powder Metallurgy (AREA)
Abstract
The aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following raw materials in parts by weight: 20-40 parts of aluminum, 6-10 parts of magnesium, 15-19 parts of silicon carbide micro powder, 10-20 parts of carbon fiber reinforcement, 10-14 parts of titanium, 2-6 parts of niobium, 3-7 parts of platinum, 10-20 parts of iron and 10-14 parts of copper; the invention has the beneficial effects that the titanium, niobium, platinum and carbon fiber reinforcement are added into the raw materials, so that the structural strength of the aluminum-based silicon carbide high-density packaging semiconductor composite material is higher, and the aluminum-based silicon carbide high-density packaging semiconductor composite material is prevented from being damaged in use.
Description
Technical Field
The invention relates to the technical field of semiconductor composite materials, in particular to an aluminum-based silicon carbide high-density packaged semiconductor composite material and a preparation method thereof.
Background
Chinese patent (publication No. CN 105400977B) discloses a method for preparing aluminum-based silicon carbide, comprising the steps of: preparing SiC/Al slurry, preparing SiC micro powder to obtain SiC slurry, adding aluminum powder and magnesium powder in proportion, and uniformly mixing; step two, tape casting, namely, defoaming the SiC/Al slurry, adding an initiator accounting for 1-3% of the total weight of the SiC/Al slurry and a monomer accounting for 2-4% of the total weight of the SiC/Al slurry, uniformly mixing, and performing tape casting to obtain a SiC/Al tape casting film; step three, biscuit firing the casting film, namely biscuit firing the casting film obtained in the step two to obtain a SiC/Al biscuit; and step four, vacuum sintering, namely sintering the SiC/Al biscuit in a vacuum state to obtain the aluminum-based silicon carbide.
The preparation is simple, so that the structural strength of the aluminum-based silicon carbide is poor, the aluminum-based silicon carbide is easily damaged during use, and the use experience of a user on the aluminum-based silicon carbide is influenced.
Disclosure of Invention
The invention aims to provide an aluminum-based silicon carbide high-density packaging semiconductor composite material and a preparation method thereof, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following raw materials in parts by weight: 20-40 parts of aluminum, 6-10 parts of magnesium, 15-19 parts of silicon carbide micro powder, 10-20 parts of carbon fiber reinforcement, 10-14 parts of titanium, 2-6 parts of niobium, 3-7 parts of platinum, 10-20 parts of iron and 10-14 parts of copper.
The further technical scheme of the invention is as follows: the feed comprises the following raw materials in parts by weight: 25-35 parts of aluminum, 7-9 parts of magnesium, 16-18 parts of silicon carbide micro powder, 13-17 parts of carbon fiber reinforcement, 11-13 parts of titanium, 3-5 parts of niobium, 4-6 parts of platinum, 13-17 parts of iron and 11-13 parts of copper.
The invention adopts the following further technical scheme: the feed comprises the following raw materials in parts by weight: 30 parts of aluminum, 8 parts of magnesium, 17 parts of silicon carbide micro powder, 15 parts of carbon fiber reinforcement, 12 parts of titanium, 4 parts of niobium, 5 parts of platinum, 15 parts of iron and 12 parts of copper.
A preparation method of an aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 20-30 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
As a further technical scheme of the invention: and (3) the rotating speed of the ball mill in the step (2) is 3000-5000 r/min.
The invention has the beneficial effects that the titanium, niobium, platinum and carbon fiber reinforcement are added into the raw materials, so that the structural strength of the aluminum-based silicon carbide high-density packaged semiconductor composite material is higher, the aluminum-based silicon carbide high-density packaged semiconductor composite material is prevented from being damaged in use, and the use experience of a user on the aluminum-based silicon carbide high-density packaged semiconductor composite material is improved.
Detailed Description
In the following, technical solutions in the embodiments of the present invention are clearly and completely described, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following components in parts by weight: 20 parts of aluminum, 6 parts of magnesium, 15 parts of silicon carbide micro powder, 10 parts of carbon fiber reinforcement, 10 parts of titanium, 2 parts of niobium, 3 parts of platinum, 10 parts of iron and 10 parts of copper.
The specific preparation method of the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 20 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
Example 2:
the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following components in parts by weight: 40 parts of aluminum, 10 parts of magnesium, 19 parts of silicon carbide micro powder, 20 parts of carbon fiber reinforcement, 14 parts of titanium, 6 parts of niobium, 7 parts of platinum, 20 parts of iron and 14 parts of copper.
The specific preparation method of the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 30 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
Example 3:
the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following components in parts by weight: 25 parts of aluminum, 7 parts of magnesium, 16 parts of silicon carbide micro powder, 13 parts of carbon fiber reinforcement, 11 parts of titanium, 3 parts of niobium, 4 parts of platinum, 13 parts of iron and 11 parts of copper.
The specific preparation method of the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 23 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
Example 4:
the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following components in parts by weight: 35 parts of aluminum, 9 parts of magnesium, 18 parts of silicon carbide micro powder, 17 parts of carbon fiber reinforcement, 13 parts of titanium, 5 parts of niobium, 6 parts of platinum, 17 parts of iron and 13 parts of copper.
The specific preparation method of the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 27 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
Example 5:
the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following components in parts by weight: 30 parts of aluminum, 8 parts of magnesium, 17 parts of silicon carbide micro powder, 15 parts of carbon fiber reinforcement, 12 parts of titanium, 4 parts of niobium, 5 parts of platinum, 15 parts of iron and 12 parts of copper.
The specific preparation method of the aluminum-based silicon carbide high-density packaging semiconductor composite material comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 25 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. The aluminum-based silicon carbide high-density packaging semiconductor composite material is characterized by comprising the following raw materials in parts by weight: 20-40 parts of aluminum, 6-10 parts of magnesium, 15-19 parts of silicon carbide micro powder, 10-20 parts of carbon fiber reinforcement, 10-14 parts of titanium, 2-6 parts of niobium, 3-7 parts of platinum, 10-20 parts of iron and 10-14 parts of copper.
2. The aluminum-based silicon carbide high-density packaging semiconductor composite material as claimed in claim 1, which comprises the following raw materials by weight: 25-35 parts of aluminum, 7-9 parts of magnesium, 16-18 parts of silicon carbide micro powder, 13-17 parts of carbon fiber reinforcement, 11-13 parts of titanium, 3-5 parts of niobium, 4-6 parts of platinum, 13-17 parts of iron and 11-13 parts of copper.
3. The aluminum-based silicon carbide high-density packaging semiconductor composite material as claimed in claim 1, which comprises the following raw materials by weight: 30 parts of aluminum, 8 parts of magnesium, 17 parts of silicon carbide micro powder, 15 parts of carbon fiber reinforcement, 12 parts of titanium, 4 parts of niobium, 5 parts of platinum, 15 parts of iron and 12 parts of copper.
4. A method for preparing the aluminum-based silicon carbide high-density packaging semiconductor composite material according to claim 1, wherein the method comprises the following steps:
(1) adding a coupling agent into the silicon carbide to obtain surface-modified silicon carbide, thereby obtaining a first intermediate;
(2) putting the raw materials except the silicon carbide micro powder into a ball mill for grinding for 20-30 minutes to obtain a second intermediate;
(3) mixing the first intermediate with the second intermediate, stirring, and distilling to obtain a third intermediate of the composite particle powder with the core-shell structure, wherein the silicon carbide is coated by the aluminum nanoshell;
(4) and performing blank pressing and hot isostatic pressing on the third intermediate to obtain the aluminum-based silicon carbide high-density packaging semiconductor composite material.
5. The method for preparing the aluminum-based silicon carbide high-density packaged semiconductor composite material according to claim 4, wherein the rotation speed of the ball mill in the step (2) is 3000-5000 r/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010128507.0A CN111218626A (en) | 2020-02-28 | 2020-02-28 | Aluminum-based silicon carbide high-density packaged semiconductor composite material and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010128507.0A CN111218626A (en) | 2020-02-28 | 2020-02-28 | Aluminum-based silicon carbide high-density packaged semiconductor composite material and preparation method thereof |
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| CN111218626A true CN111218626A (en) | 2020-06-02 |
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| CN202010128507.0A Withdrawn CN111218626A (en) | 2020-02-28 | 2020-02-28 | Aluminum-based silicon carbide high-density packaged semiconductor composite material and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111519059A (en) * | 2020-05-14 | 2020-08-11 | 湖南太子新材料科技有限公司 | Method for preparing high-performance aluminum-based silicon carbide |
| CN116283301A (en) * | 2023-03-23 | 2023-06-23 | 长春工程学院 | Silicon carbide semiconductor material and preparation process thereof |
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| CN108580922A (en) * | 2018-04-13 | 2018-09-28 | 东北大学 | A method of preparing high-performance aluminum base silicon carbide |
| CN108823514A (en) * | 2018-06-12 | 2018-11-16 | 大连理工大学 | A kind of carbon fiber/silicon-carbide particle increases the preparation method and application of aluminum matrix composite altogether |
| CN109943755A (en) * | 2019-04-19 | 2019-06-28 | 中国兵器科学研究院宁波分院 | A kind of preparation method of aluminum matrix composite used for electronic packaging |
| CN110484840A (en) * | 2019-07-31 | 2019-11-22 | 曹运福 | A kind of preparation method of carbon fiber reinforced aluminum matrix composite |
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2020
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| CN105648364A (en) * | 2016-03-01 | 2016-06-08 | 苏州莱特复合材料有限公司 | Aluminum base composite material for ships and boats and preparation method thereof |
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| CN109943755A (en) * | 2019-04-19 | 2019-06-28 | 中国兵器科学研究院宁波分院 | A kind of preparation method of aluminum matrix composite used for electronic packaging |
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| Publication number | Priority date | Publication date | Assignee | Title |
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Application publication date: 20200602 |