CN106093471A - Piezoresistance type acceleration sensor and manufacture method thereof in a kind of face containing self-checking function - Google Patents
Piezoresistance type acceleration sensor and manufacture method thereof in a kind of face containing self-checking function Download PDFInfo
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- CN106093471A CN106093471A CN201610589538.XA CN201610589538A CN106093471A CN 106093471 A CN106093471 A CN 106093471A CN 201610589538 A CN201610589538 A CN 201610589538A CN 106093471 A CN106093471 A CN 106093471A
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- acceleration sensor
- checking function
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- type acceleration
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
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Abstract
The invention provides piezoresistance type acceleration sensor in a kind of face containing self-checking function, make based on SOI wafer, described SOI wafer is disposed with substrate, intermediate oxide layer, device layer, adulterate in employing side, part cantilever beam sidewall at acceleration transducer forms pressure drag bar, and part cantilever beam sidewall forms Autonomous test electrode；The pressure drag bar that sidewall is formed can reduce axial crosstalk, self-monitoring mode is the deformation that the acceleration transducer cantilever beam utilizing the input of electrostatic force analog acceleration to cause produces, thus detecting the performance of acceleration transducer, detection mode is completely and IC detection probe station is compatible.Using front release acceleration transducer, processing concordance is high, and device area is little.Present invention also offers the manufacture method of piezoresistance type acceleration sensor in a kind of face containing self-checking function, it is achieved structure and the processing technique of self-monitoring interior piezoresistance type acceleration sensor of wafer scale can be carried out.
Description
Technical field
The present invention relates to semiconductor fabrication, be specifically related in the face containing self-checking function pressure resistance type acceleration sensing
Device and manufacture method thereof.
Background technology
The wafer scale of piezoresistance type acceleration sensor is demarcated extremely difficult with detection at present.Industrial circle does not also have the skill of maturation
Art, some tests producer (the AFORE company of such as Finland) provide the piezoresistance type acceleration testing scheme of wafer scale, but need
Customize special test fixture and probe card so that fixed assets investment and the cost of test are the highest.
Piezoresistance type acceleration sensor can only utilize testboard to do the inspection of module level after being packaged into module product at present
Survey.Once occur that acceleration transducer lost efficacy, then loss not only include acceleration transducer, also include being packaged into of module
Other devices integrated in basis and module, such as, control IC.Therefore industrial circle is badly in need of a kind of piezoresistance type acceleration sensor, can
To carry out the test of wafer scale, demarcation, before being packaged into module, just reject bad product, reduce owing to sensor failure causes
Cost allowance.
United States Patent (USP) US6389899B1 discloses a kind of employing SOI wafer and makes acceleration transducer in pressure resistance type face,
The side of cantilever beam is lightly doped, and forms pressure drag bar；Opposite side at cantilever beam carries out heavy doping, forms electrical leads.Its
Pressure drag bar doping techniques uses angle-tilt ion method for implanting, and this kind of method is not conventional cmos ion implanting mode, and it is special to need
Equipment, be unfavorable for the foundries transfer of volume production, simultaneously also there is no integrated wafer scale self-checking function, be unfavorable for the industry of chip
Change test job.
Also having that article is open discloses the manufacture method of acceleration transducer in pressure resistance type face, the generation type of pressure drag is to use
Selective growth, the silicon face only exposed just can grow pressure drag bar, and the silicon face of oxidized silicon protection then will not be given birth to
Long.But it can only grow the pressure drag bar of n-type doping, and the pressure drag bar of n-type doping has stress sensitive coefficients and has asymmetric
Property, the sensor linearity therefore produced is poor.
Summary of the invention
It is an object of the invention to, for the deficiencies in the prior art, it is provided that pressure drag in a kind of face containing self-checking function
Formula acceleration transducer and manufacture method thereof are to solve above-mentioned technical problem.
The technical scheme that the present invention is used for achieving the above object is:
Piezoresistance type acceleration sensor in a kind of face containing self-checking function, based on SOI wafer, described SOI wafer
It is disposed with substrate, intermediate oxide layer, device layer, it is characterised in that on described device layer, be provided with mask layer, described
Device layer is provided with heavily doped region, runs through described mask layer, described device layer, the release groove of described intermediate oxide layer, release aperture,
By described release groove.Release aperture etches, the movable structure of release acceleration transducer, and described movable structure has cantilever beam,
A sidewall part for described cantilever beam is provided with pressure drag bar, and a sidewall part for described cantilever beam is provided with Autonomous test electrode.
Preferably, described device layer is n-type doping.
Preferably, described heavily doped region is p-type doping.
Preferably, described pressure drag bar and Autonomous test electrode are that p-type is lightly doped.
Preferably, described device layer, described intermediate oxide layer are provided with isolation channel, and described ditch non-intercommunicating cells lateral wall is insulation wall,
And fill described isolation channel, described release groove has with described isolation channel and partially overlaps, described release groove and described heavily doped region
Have and partially overlap.
Preferably, described mask layer is provided with contact hole, deposits metal and makes electrical contact with heavily doped region, pass through in contact hole
The metal connecting line of mask layer surface deposition is drawn and is formed sensor metal pins.
Preferably, described mask layer is provided with passivation layer, exposes the metal of described sensor by etching described passivation layer
Pin.
Preferably, described passivation layer is provided with a mass.
Preferably, described SOI wafer is additionally provided with protection cap.
The present invention also provides for piezoresistance type acceleration sensor manufacture method in a kind of face containing self-checking function, based on
SOI wafer, described SOI wafer is disposed with substrate, intermediate oxide layer, device layer, comprises the following steps:
The first layer mask layer is grown at described device layer, graphical and etch described mask layer, described device layer and institute
State intermediate oxide layer and form isolation channel；
Remove ground floor mask layer to lay equal stress on new production second layer mask layer, graphically, form heavy doping at described device layer
District；
Graphically, described mask layer, described device layer, described intermediate oxide layer formation release groove, release aperture are etched；
Carrying out wall doping, a part of side of cantilever beam in acceleration sensor structure forms pressure drag bar, cantilever beam one
Surface forms Autonomous test electrode.
Preferably, also comprise the steps:
One layer of insulation wall is made at described ditch non-intercommunicating cells lateral wall；
And fill described isolation channel.
Preferably, described release groove has with described isolation channel and partially overlaps, described release groove and described heavily doped region tool
Partially overlap.
Preferably, also comprise the steps:
Graphically, and etch described mask layer, form contact hole；
In described contact hole, deposit metal realize electrical contact, and the metal deposited by mask layer surface with heavily doped region
Line is drawn and is formed sensor metal pins.
Preferably, also comprise the steps:
Described mask layer deposits the routing hole that passivation layer is the most graphical, etch sensor metal pins, etches institute
State passivation layer and expose described release groove and described release aperture.
Preferably, also comprise the steps:
Passivation layer deposition one mass above described acceleration transducer movable structure.
Preferably, also comprise the steps:
Etched by described release groove and described release aperture, the movable structure of release acceleration transducer.
Preferably, also comprise the steps:
Described SOI wafer is bonded a protection cap.
Compared with prior art, piezoresistance type acceleration sensor in the face of the present invention, form pressure drag bar at cantilever beam sidewall,
The pressure drag bar that sidewall is formed can reduce axial crosstalk, uses front release acceleration transducer, and processing concordance is high, device side
Long-pending little.Self-monitoring mode is to utilize electrostatic force analog acceleration to cause the deformation that acceleration transducer cantilever beam produces, thus
The performance of detection acceleration transducer, detection mode is completely and IC detection probe station is compatible.
Below in conjunction with the accompanying drawings this invention is specifically described.
Accompanying drawing explanation
Fig. 1 is the structural representation of first embodiment of the invention.
Fig. 2 is the flow chart of the manufacture method of first embodiment of the invention.
Fig. 3 A-3L is the process flow diagram of the manufacture method of first embodiment of the invention.
Fig. 4 is the structural representation of second embodiment of the invention semi-finished product.
Fig. 5-Fig. 7 is the schematic diagram of first embodiment of the invention.
Detailed description of the invention
Accompanying drawing 1 be first embodiment of the invention a kind of face containing self-checking function in piezoresistance type acceleration sensor
Structural representation, Fig. 2 is the flow chart of the manufacture method of first embodiment of the invention, and Fig. 3 A-3L is that the present invention first implements
The process flow diagram of the manufacture method of example.
As Fig. 1,2, shown in 3A-3L, piezoresistance type acceleration sensor and manufacture thereof in a kind of face containing self-checking function
Method:
Referring to Fig. 3 A, the embodiment of the present invention, based on SOI wafer 1, is disposed with substrate 101, intermediate oxide layer 102 and device
Part layer 103, it is preferable that device layer 103 doping type uses N-type.
Referring to Fig. 2, step 201, referring also to Fig. 3 Ba-3Bb, 3Ba are cross sectional representation, and 3Ba is schematic top plan view.
A layer mask layer 104 is made in device layer 103 superficial growth, graphical and etch mask layer 104, device layer 103 and centre
Oxide layer 102 forms isolation channel 105.
Step 202, referring also to Fig. 3 C, 3C are cross sectional representation.Etched open isolation channel 105 is carried out sidewall electricity absolutely
Edge processes, and forms one layer of insulation wall 106.The method making insulation wall 106, can use low pressure chemical vapor deposition low stress
Silicon nitride material, and remove the silicon nitride material bottom crystal column surface and isolation channel 105, only at isolation channel 105 sidewall retained nitrogen
Silicon nitride material, ultimately forms one layer of insulation wall 106.Other materials such as thermal silicon oxide material, or thermal oxidation silicon can also be used
With silicon nitride double layer material etc..
Step 203, referring also to Fig. 3 Da-3Db, 3Da are cross sectional representation, and 3Da is schematic top plan view.
Isolation channel 105 is filled with material 107.Fill the material 107 of isolation channel 105, low pressure chemical meteorology can be used to form sediment
The polycrystalline silicon material of long-pending low stress, and remove the polycrystalline silicon material on mask layer 104, only it is retained in the polycrystalline in isolation channel 105
Silicon.Optional additive method includes silicon oxide deposition material, and removes the silica material etc. on mask layer 104.
Step 204, referring also to Fig. 3 Ea-3Eb, 3Ea are cross sectional representation, and 3Eb is schematic top plan view.Remove mask
Layer 104, and the one layer of new mask layer 104 that regrow；Graphical and form heavily doped region 108.Heavily doped mode can be from
Son injects, it is also possible to is diffusion technique, is all prior art, does not repeats at this.Preferably, p-type heavy doping is used.
Step 205, referring also to Fig. 3 F, 3F are cross sectional representation.Graphical also etch mask layer 104, forms contact
Hole 109.
Step 206, referring also to Fig. 3 Ga-3Gb, 3Gb-A, 3Ga is cross sectional representation, and 3Gb is schematic top plan view,
3Gb-A is the partial enlarged drawing of part A in 3Gb figure.Graphical release groove 111 and release aperture 112.Mask layer 104 is first made
Make a layer photoetching glue-line 110 graphical release groove 111, release aperture 112.Wherein release groove 111 and isolation channel 105 have part
Overlapping, release groove 111 partially overlaps with heavily doped region 108, sees Fig. 3 Gb-A.
Step 207, referring also to Fig. 3 Ha-3Hb, 3Ha are cross sectional representation, and 3Hb is schematic top plan view.At release groove
In 111 grooves, in release aperture 112 hole, etch mask layer 104, device layer 103 and intermediate oxide layer 102, the release groove of formation
111, release aperture 112 directly penetrates into substrate layer 101, so that mask layer 104, device layer 103 and intermediate oxide layer 102 are being released
Put groove 111 and form the structure 118 of acceleration transducer.Then photoresist layer 110 is removed.
Step 208, referring also to Fig. 3 Ia-3Ib, 3Ia are cross sectional representation, and 3Ib is schematic top plan view.Adulterate in side,
Acceleration sensor structure 118 has cantilever beam 119, forms pressure drag bar 113, part cantilever beam in part cantilever beam 119 side
119 sides form Autonomous test movable electrode 120, and form Autonomous test fixed electrode 121.Preferably, side doping uses p-type light
Doping, doping way uses method of diffusion.Such as employing solid-state Pyrex are as p-type doped source, then after having spread,
The surface exposed and sidewall meeting residual oxidization silicon materials, remove the oxidation bottom crystal column surface and release groove 111, release aperture 112
Silicon materials, retain silica material (during the follow-up release guarantor to sidewall of release groove 111, release aperture 112 sidewall
Protect)；If taking other doped source, then deposit protective layer after having adulterated, and remove bottom crystal column surface and release groove
Protective layer, retains release groove 111, the protective layer of release aperture 112 sidewall.
Step 209, referring also to Fig. 3 Ja-3Jb, 3Ja are cross sectional representation, and 3Jb is schematic top plan view.Deposit metal
And graphical, form the metal pins of acceleration transducer.Deposit metal, and graphically, form acceleration transducer metal and draw
Foot 114.
Step 210, referring also to Fig. 3 K, 3K are cross sectional representation.Deposit passivation layer 115 figure dissolve routing hole,
Etch Passivation 115 exposes release groove 111, release aperture 112.
Step 211, referring also to Fig. 3 L, 3L are cross sectional representation.Release structure, is bonded protection cap 116.By release
Groove 111, release aperture 112 discharge sensor movable structure, and method for releasing can use the dry isotropic etch technology of silicon, example
As used xenon difluoride gas；The bonding of protection cap 116 can use metal eutectic to be bonded, such as aluminum germanium eutectic bonding technology,
Organic bonding material, such as benzocyclobutene can also be used.
Fig. 4 is the structure semi-finished product schematic diagram of second embodiment of the invention.Second embodiment of the invention and the present invention first
The difference of embodiment is, arranges one piece of mass 117 on passivation layer 115, to increase the matter of acceleration transducer mass
Amount, improves the sensitivity of sensor.Mass can use such as electro-coppering, uses semiconducter process to add.
The principle of the embodiment of the present invention:
Seeing Fig. 5-Fig. 7, as it is shown in figure 5, wherein 301-308 is sensor metal pins, 401-404 is acceleration sensitive
Pressure drag bar, 501 is test fixed electrode 1, and 502 is test fixed electrode 2, and 503 is test movable electrode.Acceleration sensitive pressure drag
Bar, by heavily doped region, isolation channel and metal line, forms acceleration sensitive pressure drag electric bridge as shown in Figure 6, in order to detection faces
The size of interior acceleration.
Its self-monitoring principle schematic as it is shown in fig. 7, test fixed electrode 1 (or fixed electrode 2) with test can
Applying voltage between moving electrode, due to electrostatic force, test movable electrode can drive acceleration transducer movable structure to occur
Displacement in face, the situation that simulation is inputted by acceleration load in face；This method of testing need not apply real acceleration
Load, it is only necessary to apply electricity load, conveniently carry out on-line testing, detection mode is completely completely compatible with IC detection probe station.
Certainly, this invention can also have other to convert, it is not limited to above-mentioned embodiment, those skilled in the art are had
Standby knowledge, it is also possible to various changes can be made without departing from the inventive concept of the premise, such change all should fall at this
In bright protection domain.
Claims (17)
1., containing a piezoresistance type acceleration sensor in the face of self-checking function, based on SOI wafer, described SOI wafer depends on
Secondary it is provided with substrate, intermediate oxide layer, device layer, it is characterised in that on described device layer, be provided with mask layer, described device
Part layer is provided with heavily doped region, runs through described mask layer, described device layer, the release groove of described intermediate oxide layer, release aperture, logical
Crossing described release groove, the movable structure of release aperture release acceleration transducer, described movable structure has cantilever beam, described cantilever
A sidewall part for beam is provided with pressure drag bar, and a sidewall part for described cantilever beam is provided with Autonomous test electrode.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 1, it is characterised in that institute
The device layer stated is n-type doping.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 1, it is characterised in that institute
The heavily doped region stated is p-type doping.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 1, it is characterised in that institute
State pressure drag bar and Autonomous test electrode is that p-type is lightly doped.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 1, it is characterised in that institute
State device layer, described intermediate oxide layer is provided with isolation channel, and described ditch non-intercommunicating cells lateral wall is insulation wall, and fills isolation channel, described
Release groove has with described isolation channel and partially overlaps, and described release groove and described heavily doped region have and partially overlap.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 5, it is characterised in that institute
State mask layer and be provided with contact hole, deposit metal in contact hole and make electrical contact with heavily doped region, being deposited by mask layer surface
Metal connecting line is drawn and is formed sensor metal pins.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 6, it is characterised in that institute
State mask layer and be provided with passivation layer, expose described sensor metal pins by etching described passivation layer.
Piezoresistance type acceleration sensor in face containing self-checking function the most according to claim 7, it is characterised in that institute
State passivation layer and be provided with a mass.
9. according to piezoresistance type acceleration sensor in the face containing self-checking function described in the arbitrary claim of 1-8, its
It is characterised by, described SOI wafer is additionally provided with protection cap.
10. containing a piezoresistance type acceleration sensor manufacture method in the face of self-checking function, based on SOI wafer, described
SOI wafer is disposed with substrate, intermediate oxide layer, device layer, it is characterised in that comprise the following steps:
Grow the first layer mask layer at described device layer, graphical and etch described mask layer, described device layer and described in
Between oxide layer formed isolation channel；
Remove ground floor mask layer to lay equal stress on new production second layer mask layer, graphically, form heavily doped region at described device layer；
Etch described mask layer, described device layer, described intermediate oxide layer formation release groove, release aperture；
Carrying out side doping, a part of side of cantilever beam at acceleration transducer forms pressure drag bar, a part of side of cantilever beam
Form Autonomous test electrode.
Piezoresistance type acceleration sensor in 11. faces containing self-checking function according to claim 10, it is characterised in that
Also comprise the steps:
One layer of insulation wall is made at described ditch non-intercommunicating cells lateral wall；
Fill described isolation channel.
Piezoresistance type acceleration sensor in 12. faces containing self-checking function according to claim 11, it is characterised in that
Described release groove has with described isolation channel and partially overlaps, and described release groove and described heavily doped region have and partially overlap.
Piezoresistance type acceleration sensor in 13. faces containing self-checking function according to claim 12, it is characterised in that
Also comprise the steps:
Graphically, and etch described mask layer, form contact hole；
In described contact hole, deposit metal realize electrical contact, and the metal connecting line deposited by mask layer surface with heavily doped region
Draw and form sensor metal pins.
Piezoresistance type acceleration sensor in 14. faces containing self-checking function according to claim 13, it is characterised in that
Also comprise the steps:
Described mask layer deposits the routing hole that passivation layer is the most graphical, etch sensor metal pins, etches described blunt
Change layer and expose described release groove and described release aperture.
Piezoresistance type acceleration sensor in 15. faces containing self-checking function according to claim 14, it is characterised in that
Also comprise the steps:
Passivation layer deposition one mass above described acceleration transducer movable structure.
Piezoresistance type acceleration sensor in 16. faces containing self-checking function according to claim 15, it is characterised in that
Also comprise the steps:
By described release groove and described release aperture, etch and discharge the movable structure of acceleration transducer.
17. according to piezoresistance type acceleration sensor in the face containing self-checking function described in the arbitrary claim of 9-16,
It is characterized in that, also comprise the steps:
Described SOI wafer is bonded a protection cap.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110045151A (en) * | 2019-04-16 | 2019-07-23 | 西安交通大学 | A kind of accelerometer with high g values chip and preparation method thereof of cross deformation girder construction |
| CN110568220A (en) * | 2019-08-27 | 2019-12-13 | 华东光电集成器件研究所 | Anti-interference overload-resistant MEMS accelerometer |
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| US20020000124A1 (en) * | 2000-06-26 | 2002-01-03 | Minekazu Sakai | Capacitance type dynamic quantity sensor having displacement portion and formed by wire bonding |
| CN103344785A (en) * | 2013-07-22 | 2013-10-09 | 杭州电子科技大学 | Capacitive micro inertial sensor with self calibration function |
| CN104297520A (en) * | 2013-07-15 | 2015-01-21 | 苏州美仑凯力电子有限公司 | Monolithic embedded integrated silicon acceleration and pressure composite sensor |
| CN105353167A (en) * | 2015-12-01 | 2016-02-24 | 上海芯赫科技有限公司 | MEMS piezoresistive type acceleration sensor and processing method for the same |
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| US20020000124A1 (en) * | 2000-06-26 | 2002-01-03 | Minekazu Sakai | Capacitance type dynamic quantity sensor having displacement portion and formed by wire bonding |
| CN104297520A (en) * | 2013-07-15 | 2015-01-21 | 苏州美仑凯力电子有限公司 | Monolithic embedded integrated silicon acceleration and pressure composite sensor |
| CN103344785A (en) * | 2013-07-22 | 2013-10-09 | 杭州电子科技大学 | Capacitive micro inertial sensor with self calibration function |
| CN105353167A (en) * | 2015-12-01 | 2016-02-24 | 上海芯赫科技有限公司 | MEMS piezoresistive type acceleration sensor and processing method for the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110045151A (en) * | 2019-04-16 | 2019-07-23 | 西安交通大学 | A kind of accelerometer with high g values chip and preparation method thereof of cross deformation girder construction |
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| CN106093471B (en) | 2019-06-21 |
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