CN106085427A - 硅‑锗合金量子点的合成方法 - Google Patents
硅‑锗合金量子点的合成方法 Download PDFInfo
- Publication number
- CN106085427A CN106085427A CN201610458805.XA CN201610458805A CN106085427A CN 106085427 A CN106085427 A CN 106085427A CN 201610458805 A CN201610458805 A CN 201610458805A CN 106085427 A CN106085427 A CN 106085427A
- Authority
- CN
- China
- Prior art keywords
- silicon
- toluene
- quantum dot
- necked bottle
- hexane solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 20
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 11
- 239000000956 alloy Substances 0.000 title claims abstract description 11
- 238000010189 synthetic method Methods 0.000 title claims abstract description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims abstract description 108
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims abstract description 97
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 239000012528 membrane Substances 0.000 claims abstract description 7
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims abstract description 7
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 7
- 238000003756 stirring Methods 0.000 claims description 20
- 239000012298 atmosphere Substances 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000000084 colloidal system Substances 0.000 claims description 10
- 239000012280 lithium aluminium hydride Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 10
- 238000010992 reflux Methods 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 9
- 238000010025 steaming Methods 0.000 claims description 9
- 229910010084 LiAlH4 Inorganic materials 0.000 claims description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 8
- 239000005543 nano-size silicon particle Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910006113 GeCl4 Inorganic materials 0.000 claims description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 5
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 claims description 5
- 239000012965 benzophenone Substances 0.000 claims description 5
- 238000003763 carbonization Methods 0.000 claims description 5
- 238000005253 cladding Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000002390 rotary evaporation Methods 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000011734 sodium Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- 238000003828 vacuum filtration Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- 230000004087 circulation Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 125000000217 alkyl group Chemical group 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000008187 granular material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Luminescent Compositions (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610458805.XA CN106085427B (zh) | 2016-06-23 | 2016-06-23 | 硅‑锗合金量子点的合成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610458805.XA CN106085427B (zh) | 2016-06-23 | 2016-06-23 | 硅‑锗合金量子点的合成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106085427A true CN106085427A (zh) | 2016-11-09 |
CN106085427B CN106085427B (zh) | 2018-03-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201610458805.XA Expired - Fee Related CN106085427B (zh) | 2016-06-23 | 2016-06-23 | 硅‑锗合金量子点的合成方法 |
Country Status (1)
Country | Link |
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CN (1) | CN106085427B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006085361A1 (ja) * | 2005-02-09 | 2006-08-17 | Fujitsu Limited | 発光デバイス及び半導体装置 |
CN103695855A (zh) * | 2013-12-17 | 2014-04-02 | 西安文理学院 | 一种具有各向异性的硅量子点薄膜的制备方法 |
CN104974748A (zh) * | 2015-06-23 | 2015-10-14 | 南昌航空大学 | 一种硅量子点的合成方法 |
-
2016
- 2016-06-23 CN CN201610458805.XA patent/CN106085427B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006085361A1 (ja) * | 2005-02-09 | 2006-08-17 | Fujitsu Limited | 発光デバイス及び半導体装置 |
CN103695855A (zh) * | 2013-12-17 | 2014-04-02 | 西安文理学院 | 一种具有各向异性的硅量子点薄膜的制备方法 |
CN104974748A (zh) * | 2015-06-23 | 2015-10-14 | 南昌航空大学 | 一种硅量子点的合成方法 |
Non-Patent Citations (2)
Title |
---|
A. BERNARDI ET AL.: "Growth dynamics of C-induced Ge dots on Si1-xGex strained layers", 《SURFACE SCIENCE》 * |
K. EBERL ET AL.: "FORMATION AND OPTICAL PROPERTIES OF CARBON-INDUCED GE DOTS", 《SOLID-STATE ELECTRONICS》 * |
Also Published As
Publication number | Publication date |
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CN106085427B (zh) | 2018-03-02 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Xie Yu Inventor after: Xu Jianghua Inventor after: Li Jiaxu Inventor after: Song Jianhua Inventor after: Wu Yongmin Inventor after: Ling Yun Inventor after: Zhang Jianguo Inventor before: Xie Yu Inventor before: Song Jianhua Inventor before: Wu Yongmin Inventor before: Ling Yun |
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CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180302 |