CN106059577A - Frequency divider based on MEMS (Micro Electro Mechanical Systems) broadband phase detector - Google Patents
Frequency divider based on MEMS (Micro Electro Mechanical Systems) broadband phase detector Download PDFInfo
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 12
- 230000005540 biological transmission Effects 0.000 claims description 36
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- 230000003321 amplification Effects 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000001360 synchronised effect Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
Abstract
The invention discloses a frequency divider based on an MEMS (Micro Electro Mechanical Systems) broadband phase detector. The frequency divider comprises the MEMS broadband phase detector, a direct-current automatic gain control (AGC) amplifier, a first voltage-controlled oscillator VCO1, a second voltage-controlled oscillator VCO2, a first variable resistor R1, a second variable resistor R2 and a multiplying unit. The frequency divider has the beneficial effects that through use of the MEMS broadband phase detector, the frequency divider has a broadband characteristic, and frequency division of reference signals of different frequencies can be realized; synchronous adjustment of the reference signals and feedback signals is realized through control of voltages of the voltage-controlled oscillators and a gain of the direct-current AGC amplifier by the variable resistors, so that the frequency division can be realized even in the presence of circuit fluctuation; and the frequency divider has a novel structure, and is convenient to operate and compatible with GaAs monolithic microwave integrated circuits.
Description
Technical field
The present invention relates to microelectromechanical systems field, a kind of frequency dividing based on MEMS wideband phase detector
Device.
Background technology
Frequency divider is the circuit making output frequency be its input reference signal frequency 1/N.Frequency divider has in various fields
Application, such as radio communication, radar, DTV, broadcast etc..
In prior art, wide variety of frequency divider is the frequency dividing for single frequency point mostly, it is impossible to broad frequency range again
Interior work.It addition, the direction that microelectric technique promotes Circuits System little towards volume, low in energy consumption is developed.MEMS is because having
The advantages such as little volume, low power consumption make above-mentioned requirements be possibly realized, and MEMS wideband phase detector can be in wider frequency
Keep stable detection performance in section, possess the potentiality of structure broadband frequency divider.
Summary of the invention
The technical problem to be solved is, it is provided that a kind of rational in infrastructure detecting based on MEMS wideband phase
The frequency divider of device, it is possible to achieve the frequency dividing of different frequency signals in broad frequency range.
For solving above-mentioned technical problem, the present invention provides a kind of frequency divider based on MEMS wideband phase detector, bag
Include MEMS wideband phase detector, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1 and second voltage-controlled
Agitator VCO2, the first variable resistance R1 and the second adjustable resistance R2, multiplier；Power supply VELoaded by the first variable resistance R1
In the first voltage controlled oscillator VCO 1, it is loaded into direct current automatic growth control AGC amplifier by the second adjustable resistance R2 simultaneously
On；First voltage controlled oscillator VCO 1 produces reference signal, changes first by the size regulating the first variable resistance R1 and voltage-controlled shakes
Swing the control voltage V of device VCO1C1；Reference signal and feedback signal are loaded into the ground wire 2 of MEMS wideband phase detector respectively
With two symmetrical input ports of CPW holding wire 3 composition, obtaining the DC voltage V relevant with phase contrast, DC voltage V is defeated
Entering direct current automatic growth control AGC amplifier, the signal after amplification is the control voltage V of the second voltage controlled oscillator VCO 2C2, second
The output signal of voltage controlled oscillator VCO 2 is by after multiplier, and frequency becomes original N times, and the feedback signal as frequency divider is defeated
Enter MEMS wideband phase detector；The size of regulation the second adjustable resistance R2 controls direct current automatic growth control AGC amplifier
Gain, regulate the control voltage of the second voltage controlled oscillator VCO 2, control the frequency of feedback signal；Adjusted in concert first can power transformation
Resistance R1 and the second adjustable resistance R2, makes the output that output frequency is the first voltage controlled oscillator VCO 1 of the second voltage controlled oscillator VCO 2
1/N times of frequency, completes the frequency dividing of the reference signal to different frequency, it is achieved the frequency divider worked in broad frequency range.
Preferably, after reference signal and feedback signal are by input port input MEMS wideband phase detector, first
Carrying out Vector modulation by merit clutch, composite signal is converted into the unidirectional current relevant with phase contrast by thermoelectric (al) type power sensor
Pressure V, exports through direct current output electrode 11；This DC voltage V can be expressed as:Wherein K be with
The coefficient that input signal amplitude is relevant, ωrefFor reference signal angular frequency, ωbackFor feedback signal angular frequency,For proper phase
Difference；The DC voltage V of MEMS wideband phase detector output is inputted to direct current automatic growth control AGC by the first port 12
Amplifier is amplified, the DC voltage V after amplificationC2Can be expressed as:Wherein A is direct current
The gain coefficient of automatic growth control AGC amplifier, the DC voltage V after amplificationC2It is the control of the second voltage controlled oscillator VCO 2
Voltage, controls the output frequency of the second voltage controlled oscillator VCO 2, VCO2 output frequency ω by the second port 13oUnder can passing through
Formula is expressed:By regulation the second adjustable resistance R2, change direct current automatic gain
Control the DC bias supplies V of AGC amplifierCThe regulation to gain coefficient A can be realized, thus change the second voltage controlled oscillator
VCO2 controls voltage and the frequency of corresponding output signal thereof, and the output signal of the second voltage controlled oscillator VCO 2 passes through the 3rd end
Mouth 14 input multipliers；After multiplier, frequency becomes original N times, namely: ωback=N × ωo, this signal is for dividing
Frequently the feedback signal of device, re-enters MEMS wideband phase detector by the 4th port 15；Can by Synchronization Control first
Power transformation resistance R1 and the second adjustable resistance R2, the frequency that can make feedback signal and reference signal is equal, i.e.
The output frequency of the second voltage controlled oscillator VCO 2 is 1/N times of the first voltage controlled oscillator VCO 1 output frequency, it is achieved frequency dividing.
Preferably, there is the situation of fluctuation in MEMS wideband phase detector output DC voltage V at different frequencies
Under, realizing frequency dividing by regulating the first variable resistance R1 and the second adjustable resistance R2, the signal after frequency dividing passes through fifth port
16 outputs.
Preferably, MEMS wideband phase detector is with GaAs1 as substrate, including merit clutch and thermoelectric (al) type power sensing
Device, merit clutch includes ground wire 2, CPW holding wire the 3, the oneth ACPS transmission line the 4, the 2nd ACPS transmission line the 5, the 3rd ACPS transmission line 6
With isolation resistance 7, thermoelectric (al) type power sensor includes terminal resistance 8, thermoelectric pile quasiconductor arm 9, thermoelectric pile metal arm 10, direct current
Output electrode 11；MEMS wideband phase detector is with GaAs substrate, and ground wire 2 and CPW holding wire 3 constitute the input of merit clutch
And output port, ACPS transmission line the 4, a 2nd ACPS transmission line 5 cascades mutually with the 3rd ACPS transmission line 6, isolation resistance 7 points
Not being arranged on ACPS transmission line the 4, the 2nd ACPS transmission line 5 and an end for the 3rd ACPS transmission line 6, terminal resistance 8 is arranged
At the output port of CPW holding wire 3, thermoelectric pile quasiconductor arm 9 is sequentially connected with thermoelectric pile metal arm 10, constitutes thermoelectric pile,
Direct current output electrode 11 is connected to thermoelectric pile two ends.
Preferably, the characteristic impedance of an ACPS transmission line 4 is Z1, and the characteristic impedance of the 2nd ACPS transmission line 5 is Z2, the
The characteristic impedance of three ACPS transmission lines is Z3.
The invention have the benefit that the use of MEMS wideband phase detector, make frequency divider have broadband character,
The frequency dividing of the reference signal to different frequency can be realized；By variable resistance to the control of voltage-controlled oscillator voltage with to direct current
The control of automatic growth control AGC amplifier gain, it is achieved to reference signal and the adjusted in concert of feedback signal, even if at circuit
Also frequency dividing can be realized in the case of there is fluctuation；Novel structure, easy to operate, compatible with GaAs monolithic integrated microwave circuit.
Accompanying drawing explanation
Fig. 1 is the frequency divider top view of the present invention.
Fig. 2 is that the A-A ' of the frequency divider of the present invention is to profile.
Fig. 3 is that the B-B ' of the frequency divider of the present invention is to profile.
Detailed description of the invention
As shown in Figure 1,2 and 3, a kind of frequency divider based on MEMS wideband phase detector, including MEMS broadband phase
Bit detector, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1 and the second voltage controlled oscillator VCO 2,
One variable resistance R1 and the second adjustable resistance R2, multiplier；Power supply VEIt is loaded into first by the first variable resistance R1 voltage-controlled to shake
Swing on device VCO1, be loaded on direct current automatic growth control AGC amplifier by the second adjustable resistance R2 simultaneously；First voltage-controlled shakes
Swing device VCO1 and produce reference signal, changed the control of the first voltage controlled oscillator VCO 1 by the size regulating the first variable resistance R1
Voltage VC1；Reference signal and feedback signal are loaded into the ground wire 2 and CPW holding wire 3 groups of MEMS wideband phase detector respectively
Two the symmetrical input ports become, obtain the DC voltage V relevant with phase contrast, DC voltage V input direct-current automatic gain
Controlling AGC amplifier, the signal after amplification is the control voltage V of the second voltage controlled oscillator VCO 2C2, the second voltage controlled oscillator VCO 2
Output signal by after multiplier, frequency becomes original N times, as the feedback signal input MEMS broadband phase of frequency divider
Bit detector；The size of regulation the second adjustable resistance R2 controls the gain of direct current automatic growth control AGC amplifier, regulates second
The control voltage of voltage controlled oscillator VCO 2, controls the frequency of feedback signal；Adjusted in concert the first variable resistance R1 and second variable
Resistance R2, makes 1/N times of the output frequency that output frequency is the first voltage controlled oscillator VCO 1 of the second voltage controlled oscillator VCO 2, complete
The frequency dividing of the reference signal of different frequency in pairs, it is achieved the frequency divider worked in broad frequency range.
After reference signal and feedback signal are by input port input MEMS wideband phase detector, first pass through merit and close
Device carries out Vector modulation, and composite signal is converted into the DC voltage V relevant with phase contrast by thermoelectric (al) type power sensor, through straight
Stream output electrode 11 exports；This DC voltage V can be expressed as:Wherein K is and input signal
The coefficient that amplitude is relevant, ωrefFor reference signal angular frequency, ωbackFor feedback signal angular frequency,Poor for proper phase；MEMS
The DC voltage V of wideband phase detector output is inputted to direct current automatic growth control AGC amplifier by the first port 12
It is amplified, the DC voltage V after amplificationC2Can be expressed as:Wherein A is that direct current increases automatically
Benefit controls the gain coefficient of AGC amplifier, the DC voltage V after amplificationC2It is the control voltage of the second voltage controlled oscillator VCO 2, logical
Cross the second port 13 and control the output frequency of the second voltage controlled oscillator VCO 2, VCO2 output frequency ωoCan be expressed by following formula:By regulation the second adjustable resistance R2, change direct current automatic growth control AGC
The DC bias supplies V of amplifierCThe regulation to gain coefficient A can be realized, thus change the second voltage controlled oscillator VCO 2
Controlling voltage and the frequency of corresponding output signal thereof, the output signal of the second voltage controlled oscillator VCO 2 is defeated by the 3rd port 14
Enter multiplier；After multiplier, frequency becomes original N times, namely: ωback=N × ωo, this signal is frequency divider
Feedback signal, re-enters MEMS wideband phase detector by the 4th port 15；By Synchronization Control the first variable resistance
R1 and the second adjustable resistance R2, the frequency that can make feedback signal and reference signal is equal, i.e.Second pressure
The output frequency of controlled oscillator VCO2 is 1/N times of the first voltage controlled oscillator VCO 1 output frequency, it is achieved frequency dividing.
In the case of MEMS wideband phase detector output DC voltage V at different frequencies exists fluctuation, pass through
Regulating the first variable resistance R1 and the second adjustable resistance R2 and realize frequency dividing, the signal after frequency dividing is exported by fifth port 16.
MEMS wideband phase detector is with GaAs1 as substrate, including merit clutch and thermoelectric (al) type power sensor, merit clutch
Including ground wire 2, CPW holding wire the 3, the oneth ACPS transmission line the 4, the 2nd ACPS transmission line the 5, the 3rd ACPS transmission line 6 and isolation electricity
Resistance 7, thermoelectric (al) type power sensor includes terminal resistance 8, thermoelectric pile quasiconductor arm 9, thermoelectric pile metal arm 10, direct current output electrode
11；MEMS wideband phase detector is with GaAs substrate, and ground wire 2 and CPW holding wire 3 constitute the input and output side of merit clutch
Mouthful, ACPS transmission line the 4, a 2nd ACPS transmission line 5 cascades mutually with the 3rd ACPS transmission line 6, and isolation resistance 7 is separately positioned on
Oneth ACPS transmission line the 4, the 2nd ACPS transmission line 5 and the end of the 3rd ACPS transmission line 6, terminal resistance 8 is arranged on CPW signal
At the output port of line 3, thermoelectric pile quasiconductor arm 9 is sequentially connected with thermoelectric pile metal arm 10, constitutes thermoelectric pile, direct current output electricity
Pole 11 is connected to thermoelectric pile two ends.
The characteristic impedance of the oneth ACPS transmission line 4 is Z1, and the characteristic impedance of the 2nd ACPS transmission line 5 is Z2, the 3rd ACPS
The characteristic impedance of transmission line is Z3.
The preparation method of the frequency divider based on MEMS wideband phase detector of the present invention is as follows:
1) GaAs substrate is prepared: select the half-insulating GaAs substrate of extension, wherein extension N+GaAs
Doping content is 1018cm-3, its square resistance is 100～130 Ω/；
2) photoetching isolate the N+GaAs of extension, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile；
3) anti-carving N+GaAs, forming its doping content is 1017cm-3The semiconductor thermocouple arm of thermoelectric pile；
4) photoetching: remove and will retain the photoresist that gold germanium ni au is local；
5) sputtering gold germanium ni au, its thickness is altogether
6) peel off, form the metal thermocouple arm of thermoelectric pile；
7) photoetching: remove and will retain the photoresist that tantalum nitride is local；
8) sputtering tantalum nitride, its thickness is 1 μm；
9) peel off；
10) photoetching: remove the local photoresist that will retain ground floor gold；
11) evaporation ground floor gold, its thickness is 0.3 μm；
12) peel off, form CPW holding wire, ACPS holding wire, ground wire, direct current output electrode；
13) anti-carving tantalum nitride, form terminal resistance, its square resistance is 25 Ω/；
14) evaporation titanium/gold/titanium, its thickness isEvaporation is for the down payment of plating；
15) photoetching: remove the photoresist electroplating place；
16) plating second layer gold, its thickness is 2 μm；
17) anti-carve titanium/gold/titanium, corrode down payment, form CPW holding wire, ACPS holding wire, ground wire, direct current transportation pole；
18) this GaAs substrate back is thinned to 100 μm；
19) the MEMS wideband phase detector of preparation is connected with other components, constitutes frequency divider.
Whether distinguish is that the standard of this structure is as follows:
The frequency divider based on MEMS wideband phase detector of the present invention comprises MEMS wideband phase detector, direct current
Automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1 and the second voltage controlled oscillator VCO 2, the first variable resistance R1 and
The second adjustable resistance R2, multiplier.MEMS wideband phase detector uses three joint transmission line cascade structures, it is achieved broadband is special
Property.DC source VEIt is connected respectively to the first voltage controlled oscillator VCO 1 He by the first variable resistance R1 and the second adjustable resistance R2
On direct current automatic growth control AGC amplifier, reference signal is produced by the first voltage controlled oscillator VCO 1, variable by regulation first
The size of resistance R1 controls the frequency of reference signal.Reference signal and feedback signal are by after MEMS wideband phase detector
Output comprises the DC voltage V of phase information, is amplified through direct current automatic growth control AGC amplifier, produces the second pressure
The control voltage of controlled oscillator VCO2, the output signal of the second voltage controlled oscillator VCO 2 produces feedback signal after multiplier.Directly
The gain of stream automatic growth control AGC amplifier is controlled by the second adjustable resistance R2, by regulating the big of the second adjustable resistance R2
Urine can control the frequency of feedback signal, and adjusted in concert the first variable resistance R1 and the second adjustable resistance R2 makes the second VCO
The output frequency of device VCO2 is 1/N times of the first voltage controlled oscillator VCO 1 output frequency, completes frequency dividing, it is achieved at broad frequency range
The frequency divider of interior work.
Although the present invention is illustrated with regard to preferred implementation and has been described, it is understood by those skilled in the art that
Without departing from scope defined by the claims of the present invention, the present invention can be carried out variations and modifications.
Claims (5)
1. a frequency divider based on MEMS wideband phase detector, it is characterised in that including: MEMS wideband phase detects
Device, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1 and the second voltage controlled oscillator VCO 2, first are variable
Resistance R1 and the second adjustable resistance R2, multiplier；Power supply VEIt is loaded into the first voltage controlled oscillator by the first variable resistance R1
On VCO1, it is loaded on direct current automatic growth control AGC amplifier by the second adjustable resistance R2 simultaneously；First voltage controlled oscillator
VCO1 produces reference signal, is changed the control voltage of the first voltage controlled oscillator VCO 1 by the size regulating the first variable resistance R1
VC1；Reference signal and feedback signal are loaded into ground wire (2) and CPW holding wire (3) group of MEMS wideband phase detector respectively
Two the symmetrical input ports become, obtain the DC voltage V relevant with phase contrast, DC voltage V input direct-current automatic gain
Controlling AGC amplifier, the signal after amplification is the control voltage V of the second voltage controlled oscillator VCO 2C2, the second voltage controlled oscillator VCO 2
Output signal by after multiplier, frequency becomes original N times, as the feedback signal input MEMS broadband phase of frequency divider
Bit detector；The size of regulation the second adjustable resistance R2 controls the gain of direct current automatic growth control AGC amplifier, regulates second
The control voltage of voltage controlled oscillator VCO 2, controls the frequency of feedback signal；Adjusted in concert the first variable resistance R1 and second variable
Resistance R2, makes 1/N times of the output frequency that output frequency is the first voltage controlled oscillator VCO 1 of the second voltage controlled oscillator VCO 2, complete
The frequency dividing of the reference signal of different frequency in pairs, it is achieved the frequency divider worked in broad frequency range.
2. frequency divider based on MEMS wideband phase detector as claimed in claim 1, it is characterised in that reference signal and
After feedback signal is by input port input MEMS wideband phase detector, first passes through merit clutch and carry out Vector modulation, close
Signal is become to be converted into the DC voltage V relevant with phase contrast by thermoelectric (al) type power sensor, defeated through direct current output electrode (11)
Go out；This DC voltage V is expressed as:Wherein K is the coefficient relevant with input signal amplitude, ωref
For reference signal angular frequency, ωbackFor feedback signal angular frequency,Poor for proper phase；MEMS wideband phase detector exports
DC voltage V be amplified to direct current automatic growth control AGC amplifier by the first port (12) input, straight after amplification
Stream voltage VC2It is expressed as:Wherein A is the gain system of direct current automatic growth control AGC amplifier
Number, the DC voltage V after amplificationC2It is the control voltage of the second voltage controlled oscillator VCO 2, controls second by the second port (13)
The output frequency of voltage controlled oscillator VCO 2, VCO2 output frequency ωoExpressed by following formula:By regulation the second adjustable resistance R2, change direct current automatic growth control AGC
The DC bias supplies V of amplifierCThe regulation to gain coefficient A can be realized, thus change the second voltage controlled oscillator VCO 2
Controlling voltage and the frequency of corresponding output signal thereof, the output signal of the second voltage controlled oscillator VCO 2 passes through the 3rd port (14)
Input multiplier；After multiplier, frequency becomes original N times, namely: ωback=N × ωo, this signal is frequency divider
Feedback signal, re-enter MEMS wideband phase detector by the 4th port (15)；Variable by Synchronization Control first
Resistance R1 and the second adjustable resistance R2, the frequency that can make feedback signal and reference signal is equal, i.e.The
The output frequency of two voltage controlled oscillator VCO 2 is 1/N times of the first voltage controlled oscillator VCO 1 output frequency, it is achieved frequency dividing.
3. frequency divider based on MEMS wideband phase detector as claimed in claim 1, it is characterised in that MEMS broadband
In the case of phase detectors output DC voltage V at different frequencies exists fluctuation, by regulating the first variable resistance R1
Realizing frequency dividing with the second adjustable resistance R2, the signal after frequency dividing is exported by fifth port (16).
4. frequency divider based on MEMS wideband phase detector as claimed in claim 1, it is characterised in that MEMS broadband
Phase detectors are with GaAs (1) as substrate, and including merit clutch and thermoelectric (al) type power sensor, merit clutch includes ground wire (2), CPW
Holding wire (3), an ACPS transmission line (4), the 2nd ACPS transmission line (5), the 3rd ACPS transmission line (6) and isolation resistance (7),
Thermoelectric (al) type power sensor includes terminal resistance (8), thermoelectric pile quasiconductor arm (9), thermoelectric pile metal arm (10), direct current output electricity
Pole (11)；MEMS wideband phase detector is with GaAs substrate, and ground wire (2) constitutes the input of merit clutch with CPW holding wire (3)
And output port, an ACPS transmission line (4), the 2nd ACPS transmission line (5) cascade mutually with the 3rd ACPS transmission line (6), isolate
Resistance (7) is separately positioned on an ACPS transmission line (4), the 2nd ACPS transmission line (5) and the end of the 3rd ACPS transmission line (6)
End, terminal resistance (8) is arranged at the output port of CPW holding wire (3), thermoelectric pile quasiconductor arm (9) and thermoelectric pile metal arm
(10) being sequentially connected with, constitute thermoelectric pile, direct current output electrode (11) is connected to thermoelectric pile two ends.
5. frequency divider based on MEMS wideband phase detector as claimed in claim 1 a, it is characterised in that ACPS passes
The characteristic impedance of defeated line (4) is Z1, and the characteristic impedance of the 2nd ACPS transmission line (5) is Z2, the feature of the 3rd ACPS transmission line (6)
Impedance is Z3.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020024919A1 (en) * | 2018-07-30 | 2020-02-06 | Huawei Technologies Co., Ltd. | Dual mode power supply for voltage controlled oscillators |
| US11606096B2 (en) | 2018-07-30 | 2023-03-14 | Huawei Technologies Co., Ltd. | Power supply for voltage controlled oscillators with automatic gain control |
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| CN103346785A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase-locked loop based on micromechanical direct thermoelectric power sensors and preparation method thereof |
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|---|---|---|---|---|
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| CN106059577B (en) | 2018-11-09 |
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