CN103326668A - Frequency multiplier based on micromechanical clamped beam capacitance-type power sensor and preparation method - Google Patents
Frequency multiplier based on micromechanical clamped beam capacitance-type power sensor and preparation method Download PDFInfo
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- CN103326668A CN103326668A CN2013102456423A CN201310245642A CN103326668A CN 103326668 A CN103326668 A CN 103326668A CN 2013102456423 A CN2013102456423 A CN 2013102456423A CN 201310245642 A CN201310245642 A CN 201310245642A CN 103326668 A CN103326668 A CN 103326668A
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Abstract
The invention discloses a frequency multiplier based on a micromechanical clamped beam capacitance-type power sensor and a preparation method. The frequency multiplier comprises a substrate, a coplanar waveguide signal line, two pairs of MEMS clamped beam structures, a power combiner, a terminal matched resistor, the MEMS clamped beam structure capacitance-type power sensor, an external-connection capacitance three-point-type voltage-controlled oscillator and a divider. The coplanar waveguide signal line is arranged on the substrate. An input signal and a voltage-controlled oscillator output signal are vectorially synthesized through the power combiner, wherein the voltage-controlled oscillator output signal is processed in a frequency-shifting mode by the divider. The synthesis of the input signal and the voltage-controlled oscillator output signal is directly reflected on changes of capacitance between a third clamped beam and a sensor electrode in the MEMS clamped beam structure capacitance-type power sensor and used as variable capacitance for controlling the voltage-controlled oscillator, and therefore the frequency of the output signal is controlled. Then, frequency-shifting processing and feedback again are carried out on the frequency of the voltage-controlled oscillator output signal by the divider until a system is locked, and the function of frequency multiplication is achieved. According to the frequency multiplier based on the micromechanical clamped beam capacitance-type power sensor and the preparation method, modularization and integration are easy, and compared with a traditional circuit, the frequency multiplier eliminates a loop filter, is simple and novel in structure and has the advantage of being compatible with gallium arsenide monolithic microwave integrated circuits.
Description
Technical field
The present invention relates to microelectromechanical systems (MEMS), especially based on the frequency multiplier of micromechanics clamped beam condenser type power sensor.
Background technology
Along with the development of hyundai electronics science and technology, frequency doubling technology has been widely used in the fields such as radar, electronic countermeasures, communication, Digital Television, Medical Devices, remote-control romote-sensing and electronic measuring instrument.The development of modern science and technology has proposed more and more higher requirement to signal source, require the bandwidth of signal source, frequency resolution is high, frequency stability is high, phase noise and spuious very low, can be program control etc.And the basic element of character of phase-locked loop such as phase discriminator and voltage controlled oscillator etc. all are easy to again modular Integrated, so that circuit design becomes easily, circuit implements also relatively simple.Directly utilize phase-locked loop module to come the design frequency synthesizer, reduced design difficulty and system debug difficulty, saved time cost.In recent years, along with the fast development of MEMS technology, utilizing microelectromechanical systems to make frequency multiplier becomes possibility.
Summary of the invention
The technical problem that solves: according to the deficiencies in the prior art, the invention provides a kind of frequency multiplier based on micromechanics clamped beam condenser type power sensor, solve the defectives such as the Design of frequency multiplier difficulty is high in the prior art, the system debug difficulty is large, time cost is high.
Technical scheme: for solving the problems of the technologies described above, the present invention by the following technical solutions:
Frequency multiplier based on micromechanics clamped beam condenser type power sensor, co-planar waveguide holding wire, ground wire, two pairs of MEMS fixed beam structures, merits of comprising substrate, being arranged on the substrate are closed device, terminal build-out resistor and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator and divider, at axis of symmetry of described substrate definition;
Described ground wire forms symmetrical centered by the axis of symmetry, comprises two side ground wires and a center ground wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; On described two side ground wires a symmetrical breach is arranged respectively; Described co-planar waveguide holding wire forms symmetrical centered by the axis of symmetry, comprises two input co-planar waveguide holding wires and an output co-planar waveguide holding wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with the terminal build-out resistor between described output co-planar waveguide holding wire and the side ground wire;
Described merit is closed device and is formed symmetrically centered by the axis of symmetry, comprises two the asymmetric coplanar stripline holding wires and the isolation resistance that are symmetrically distributed in this axis of symmetry; The input of described two asymmetric coplanar stripline holding wires is isolated by isolation resistance, and links to each other with two input co-planar waveguide holding wires respectively; The described output co-planar waveguide holding wire of access after the output of described two asymmetric coplanar stripline holding wires links to each other; Be provided with the terminal build-out resistor between described output co-planar waveguide holding wire and the side ground wire;
Described two pairs of MEMS fixed beam structures are designated as respectively first pair of fixed beam structure and second pair of fixed beam structure; Described first pair of MEMS fixed beam structure comprises two the first clamped beams of relative axis of symmetry symmetry, across above the input co-planar waveguide holding wire of respective side, the two ends of described the first clamped beam are fixed on the side ground wire of center ground wire and the same side by the anchor district respectively described two the first clamped beams respectively; Described second pair of MEMS fixed beam structure comprises two the second clamped beams of relative axis of symmetry symmetry, and described two the second clamped beams connect respectively the breach two ends of the side ground wire of the same side by the anchor district;
Described MEMS fixed beam structure condenser type power sensor comprises the 3rd fixed beam structure, two sensing electrodes, two press welding blocks; The 3rd clamped beam in described the 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam link to each other with the side ground wire of both sides by the anchor district respectively; Described two sensing electrodes are all below the 3rd fixed beam structure and be symmetrically distributed between output co-planar waveguide holding wire and the respective side ground wire, described sensing electrode with its above the 3rd clamped beam between form variable capacitance; Described two sensing electrodes link to each other by press welding block of a connecting line and its homonymy separately, and two connecting lines that link to each other with two sensing electrodes pass respectively the breach of the side ground wire of both sides; Described another press welding block links to each other with side ground wire wherein by connecting line;
Two inputs of described external capacitor bikini voltage controlled oscillator link to each other with described two press welding blocks respectively; The output signal of described external voltage controlled oscillator is connected to described input co-planar waveguide holding wire through behind the divider as feedback signal;
In described first pair of MEMS fixed beam structure, be coated with insulating medium layer on the input co-planar waveguide holding wire of the first clamped beam correspondence below; In described second pair of MEMS fixed beam structure, be coated with insulating medium layer on the connecting line of the second clamped beam below; In the fixed beam structure in described MEMS fixed beam structure condenser type power sensor, be coated with insulating medium layer on the sensing electrode of the 3rd clamped beam below and the output co-planar waveguide holding wire.
The material of described substrate is GaAs.The material of described insulating medium layer is silicon nitride.The material of described isolation resistance and terminal build-out resistor is tantalum nitride.
Preparation method based on the frequency multiplier of micromechanics fixed beam structure formula power sensor may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of CPW holding wire and ground wire, ACPS holding wire and ground wire, MEMS clamped beam, press welding block, output press welding block and the connecting line of sensing electrode
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW holding wire of MEMS clamped beam below;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer has determined the distance on beam and plane, silicon nitride medium layer place; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
12) evaporation titanium/gold/titanium, its thickness is
Evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW holding wire, ground wire, ACPS holding wire, MEMS clamped beam, press welding block and metal connecting line;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries.
Beneficial effect: frequency multiplier and preparation method based on micromechanics clamped beam condenser type power sensor of the present invention, closing device by merit, input signal and the voltage controlled oscillator output signal after divider carries out frequency shift and processes can be carried out vector synthetic, detected the watt level of the signal after synthetic by MEMS fixed beam structure condenser type power sensor, directly be reflected in the variation of electric capacity between the 3rd clamped beam in the MEMS fixed beam structure condenser type power sensor and the sensing electrode.The variable capacitance that replaces the condenser type voltage controlled oscillator with electric capacity between the 3rd clamped beam of MEMS fixed beam structure condenser type power sensor and the sensing electrode, the output signal frequency of control voltage controlled oscillator.Phase difference between input signal and the feedback signal just can change the size of voltage controlled oscillator variable capacitance, thus the frequency of control output signal.On based on feedback link, with divider the voltage controlled oscillator output signal frequency is carried out the frequency shift processing and feed back to again on the input co-planar waveguide holding wire, until system lock, whole like this circuit reaches the frequency multiplication effect.Frequency multiplier based on micromechanics fixed beam structure condenser type power sensor not only is easy to modularization, integrated, and compares traditional circuit, has saved loop filter, and is simple in structure, novel, has advantages of and the GaAs single-chip microwave integration circuit compatibility.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is that the A-A ' of Fig. 1 is to view;
Fig. 3 is that the B-B ' of Fig. 1 is to view.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.
As shown in Figure 1: based on the frequency multiplier of micromechanics clamped beam condenser type power sensor, comprise that material is that the substrate 1 of GaAs, co-planar waveguide holding wire 2, ground wire 3, two pairs of MEMS fixed beam structures, the merits that are arranged on the substrate 1 are closed device, terminal build-out resistor 9 and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator and divider.Define an axis of symmetry at described substrate 1:
Described ground wire 3 forms symmetrical centered by the axis of symmetry, comprises two side ground wires and a center ground wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; On described two side ground wires a symmetrical breach is arranged respectively; Described co-planar waveguide holding wire forms symmetrical centered by the axis of symmetry, comprises two input co-planar waveguide holding wires and an output co-planar waveguide holding wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with terminal build-out resistor 9 between described output co-planar waveguide holding wire and the side ground wire, its material is tantalum nitride, can absorb the signal power by the transmission of input co-planar waveguide holding wire fully, and be converted to heat;
Described merit is closed device and is formed symmetrically centered by the axis of symmetry, comprises two the asymmetric coplanar stripline holding wires 8 and the isolation resistance 7 that are symmetrically distributed in this axis of symmetry; The input of described two asymmetric coplanar stripline holding wires 8 is isolation resistance 7 isolation of tantalum nitride by material, and links to each other with two input co-planar waveguide holding wires respectively; The described output co-planar waveguide holding wire of access after the output of described two asymmetric coplanar stripline holding wires 8 links to each other; The effect that merit is closed device is the signal that input co-planar waveguide holding wire transmits to be carried out vector synthesize, and the signal after will synthesizing is transmitted to MEMS fixed beam structure condenser type power sensor;
Described two pairs of MEMS fixed beam structures are designated as respectively first pair of fixed beam structure and second pair of fixed beam structure; Described first pair of MEMS fixed beam structure comprises two the first clamped beams 41 of relative axis of symmetry symmetry, described two the first clamped beams 41 are respectively across above the input co-planar waveguide holding wire of respective side, the two ends of described the first clamped beam 41 are fixed on the side ground wire of center ground wire and the same side by anchor district 5 respectively, be coated with the insulating medium layer 6 that material is silicon nitride on the input co-planar waveguide holding wire of described the first clamped beam 41 corresponding belows, the input co-planar waveguide holding wire of the first clamped beam 41 and below consists of building-out capacitor, the design of this building-out capacitor can be dwindled the size that merit is closed device when realizing the circuit impedance coupling, improve integrated level; Described second pair of MEMS fixed beam structure comprises two the second clamped beams 42 of relative axis of symmetry symmetry, and described two the second clamped beams 42 connect respectively the breach two ends of the side ground wire of the same side by anchor district 5; Two pairs of MEMS clamped beams couple together isolated ground wire symmetrically.
Described MEMS fixed beam structure condenser type power sensor comprises the 3rd fixed beam structure, two sensing electrodes 10, two press welding blocks 12; The 3rd clamped beam 43 in described the 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam 43 link to each other with the side ground wire of both sides by anchor district 5 respectively; Described two sensing electrodes 10 are all below the 3rd fixed beam structure and be symmetrically distributed between output co-planar waveguide holding wire and the respective side ground wire, be coated with the insulating medium layer 6 that material is silicon nitride on the sensing electrode 10 of the 3rd clamped beam 43 belows and the output co-planar waveguide signal, form variable capacitance between the 3rd clamped beam 43 of described sensing electrode 10 and its top; Described two sensing electrodes 10 link to each other with its homonymy press welding block 12 by a connecting line 11 separately, two connecting lines 11 that link to each other with two sensing electrodes 10 pass respectively the breach of the side ground wire of both sides, and are positioned on the connecting line that the 3rd clamped beam below is indentation, there and are coated with the insulating medium layer 6 that material is silicon nitride; Described another press welding block 12 links to each other with side ground wire wherein by a connecting line 11;
Two inputs of described external capacitor bikini voltage controlled oscillator are used for the access variable capacitance originally, and now two inputs with this external capacitor bikini voltage controlled oscillator link to each other with described two press welding blocks 12 respectively; The variable capacitance of formed variable capacitance replacement condenser type voltage controlled oscillator directly accesses voltage controlled oscillator and controls its output signal frequency between the 3rd clamped beam 43 of realization with sensing electrode 10 and its top, and the input variable of voltage controlled oscillator is DC quantity, has saved the loop filter of conventional phase locked loops;
The output signal of described external capacitor bikini voltage controlled oscillator carries out being connected to described input co-planar waveguide holding wire as feedback signal after frequency shift is processed through divider.Phase difference between input signal and the feedback signal just can change the size of voltage controlled oscillator variable capacitance like this, thereby the frequency of modulated output signal, and then again feed back to the co-planar waveguide holding wire by voltage controlled oscillator and divider, until whole device locking finally reaches the effect of whole circuit frequency multiplication.
During work, the co-planar waveguide holding wire is used for realizing the transmission of microwave signal, closing device by merit, input signal and the voltage controlled oscillator output signal after divider carries out frequency shift and processes can be carried out vector synthetic, the output that merit is closed device is connected to MEMS fixed beam structure condenser type power sensor, detected the watt level of the signal after synthetic by MEMS fixed beam structure condenser type power sensor, directly be reflected in the variation of electric capacity between the 3rd clamped beam 43 in the MEMS fixed beam structure condenser type power sensor and the sensing electrode 10.Be applied to external capacitor bikini voltage controlled oscillator with electric capacity between the 3rd clamped beam 43 of MEMS fixed beam structure condenser type power sensor and the sensing electrode 10 as a variable capacitance, the output signal frequency of control voltage controlled oscillator.Phase difference between input signal and the output signal just can change the size of voltage controlled oscillator variable capacitance, thus the frequency of control output signal.On based on feedback link, with divider the voltage controlled oscillator output signal frequency is carried out the frequency shift processing and feed back to again on the co-planar waveguide holding wire, until system lock, whole like this circuit reaches the frequency multiplication effect.
Preparation method based on the frequency multiplier of micromechanics clamped beam condenser type power sensor may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of CPW holding wire and ground wire, ACPS holding wire and ground wire, MEMS clamped beam, press welding block, output press welding block and the connecting line of sensing electrode
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW holding wire of MEMS clamped beam below;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer has determined the distance on beam and plane, silicon nitride medium layer place; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
12) evaporation titanium/gold/titanium, its thickness is
Evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW holding wire, ground wire, ACPS holding wire, MEMS clamped beam, press welding block and metal connecting line;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. based on the frequency multiplier of micromechanics clamped beam condenser type power sensor, it is characterized in that: co-planar waveguide holding wire (2), ground wire (3), two pairs of MEMS fixed beam structures, merits of comprise substrate (1), being arranged on the substrate (1) are closed device, terminal build-out resistor (9) and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator and divider, at axis of symmetry of described substrate (1) definition;
Described ground wire (3) forms symmetrical centered by the axis of symmetry, comprises two side ground wires and a center ground wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; On described two side ground wires a symmetrical breach is arranged respectively; Described co-planar waveguide holding wire (2) forms symmetrical centered by the axis of symmetry, comprises two input co-planar waveguide holding wires and an output co-planar waveguide holding wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with terminal build-out resistor (9) between described output co-planar waveguide holding wire and the side ground wire;
Described merit is closed device and is formed symmetrically centered by the axis of symmetry, comprises two the asymmetric coplanar stripline holding wires (8) and the isolation resistance (7) that are symmetrically distributed in this axis of symmetry; The input of described two asymmetric coplanar stripline holding wires (8) is isolated by isolation resistance (7), and links to each other with two input co-planar waveguide holding wires respectively; The described output co-planar waveguide holding wire of access after the output of described two asymmetric coplanar stripline holding wires (8) links to each other;
Described two pairs of MEMS fixed beam structures are designated as respectively first pair of fixed beam structure and second pair of fixed beam structure; Described first pair of MEMS fixed beam structure comprises two first clamped beams (41) of relative axis of symmetry symmetry, across above the input co-planar waveguide holding wire of respective side, the two ends of described the first clamped beam (41) are fixed on the side ground wire of center ground wire and the same side by anchor district (5) respectively described two the first clamped beams (41) respectively; Described second pair of MEMS fixed beam structure comprises two second clamped beams (42) of relative axis of symmetry symmetry, and described two the second clamped beams (42) connect respectively the breach two ends of the side ground wire of the same side by anchor district (5);
Described MEMS fixed beam structure condenser type power sensor comprises the 3rd fixed beam structure, two sensing electrodes (10), two press welding blocks (12); The 3rd clamped beam (43) in described the 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam (43) link to each other with the side ground wire of both sides by anchor district (5) respectively; Described two sensing electrodes (10) are all below the 3rd fixed beam structure and be symmetrically distributed between output co-planar waveguide holding wire and the respective side ground wire, described sensing electrode (10) with its above the 3rd clamped beam (43) between form variable capacitance; Described two sensing electrodes (10) link to each other with a press welding block of its homonymy (12) by a connecting line (11) separately, and two connecting lines (11) that link to each other with two sensing electrodes (10) pass respectively the breach of the side ground wire of both sides; Described another press welding block (12) links to each other with side ground wire wherein by a connecting line (11);
Two inputs of described external capacitor bikini voltage controlled oscillator link to each other with described two press welding blocks (12) respectively; The output signal of described external voltage controlled oscillator is connected to described input co-planar waveguide holding wire through behind the divider as feedback signal.
2. the frequency multiplier based on micromechanics clamped beam condenser type power sensor according to claim 1, it is characterized in that: in described first pair of MEMS fixed beam structure, be coated with insulating medium layer (6) on the input co-planar waveguide holding wire of the corresponding below of the first clamped beam (41); In described second pair of MEMS fixed beam structure, be coated with insulating medium layer (6) on the connecting line (11) of the second clamped beam (42) below; In the fixed beam structure in described MEMS fixed beam structure condenser type power sensor, be coated with insulating medium layer (6) on the sensing electrode (10) of the 3rd clamped beam (43) below and the output co-planar waveguide holding wire.
3. the frequency multiplier based on micromechanics clamped beam condenser type power sensor according to claim 1, it is characterized in that: the material of described substrate (1) is GaAs.
4. the frequency multiplier based on micromechanics clamped beam condenser type power sensor according to claim 1, it is characterized in that: the material of described isolation resistance (7) and terminal build-out resistor (9) is tantalum nitride.
5. the frequency multiplier based on micromechanics clamped beam condenser type power sensor according to claim 1, it is characterized in that: the material of described insulating medium layer (6) is silicon nitride.
6. based on the preparation method of the frequency multiplier of micromechanics clamped beam condenser type power sensor, may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of CPW holding wire and ground wire, ACPS holding wire and ground wire, MEMS clamped beam, press welding block, output press welding block and the connecting line of sensing electrode
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW holding wire of MEMS clamped beam below;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer has determined the distance on beam and plane, silicon nitride medium layer place; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
12) evaporation titanium/gold/titanium, its thickness is
Evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW holding wire, ground wire, ACPS holding wire, MEMS clamped beam, press welding block and metal connecting line;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries.
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| GB2509050A (en) * | 2012-10-31 | 2014-06-25 | Cambridge Silicon Radio Ltd | MEMS based frequency mixer |
| CN105207623A (en) * | 2015-09-29 | 2015-12-30 | 西安空间无线电技术研究所 | W-waveband high power integrated synthesis frequency multiplication source |
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| CN105207623A (en) * | 2015-09-29 | 2015-12-30 | 西安空间无线电技术研究所 | W-waveband high power integrated synthesis frequency multiplication source |
| CN105207623B (en) * | 2015-09-29 | 2017-12-22 | 西安空间无线电技术研究所 | A kind of W-waveband high power is integrated to be combined to frequency multiplication source |
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