CN106100634B - Phaselocked loop based on MEMS wideband phase detectors - Google Patents
Phaselocked loop based on MEMS wideband phase detectors Download PDFInfo
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- CN106100634B CN106100634B CN201610395751.7A CN201610395751A CN106100634B CN 106100634 B CN106100634 B CN 106100634B CN 201610395751 A CN201610395751 A CN 201610395751A CN 106100634 B CN106100634 B CN 106100634B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/10—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range
- H03L7/107—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using a variable transfer function for the loop, e.g. low pass filter having a variable bandwidth
- H03L7/1072—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using a variable transfer function for the loop, e.g. low pass filter having a variable bandwidth by changing characteristics of the charge pump, e.g. changing the gain
Abstract
The invention discloses a kind of phaselocked loops based on MEMS wideband phase detectors, including MEMS wideband phases detector, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1, the second voltage controlled oscillator VCO 2, the first variable resistance R1 and the second adjustable resistance R2.Beneficial effects of the present invention are：The use of MEMS wideband phase detectors makes phaselocked loop have broadband character, the locking to the reference signal of different frequency may be implemented；The control that the gain of voltage and direct current automatic growth control AGC amplifier is controlled voltage controlled oscillator by variable resistance, realizes the synchronous adjustment to reference signal and feedback signal, and locking can be also realized in the case where circuit has fluctuation；Structure novel, it is easy to operate, it is compatible with GaAs monolithic integrated microwave circuits.
Description
Technical field
The present invention relates to microelectromechanical systems field, especially a kind of locking phase based on MEMS wideband phase detectors
Ring.
Background technology
Phaselocked loop is a kind of utilization feedback control principle realization frequency and phase locked technology, when the frequency of reference signal
Or phase, when changing, phaselocked loop can detect this variation, and adjust output frequency by reponse system, until final
Output signal and reference signal both reach with frequency, the lock-out state of constant phase difference.Phaselocked loop is answered in various fields
With, such as wireless communication, radar, DTV, broadcast.
Current widely applied phaselocked loop is the locking for single frequency point mostly, cannot be satisfied the need of wideband communication system
It asks.In addition, microelectric technique promotes circuit system to develop towards direction small, low in energy consumption, MEMS device is because with small
The advantages such as volume, low power consumption so that above-mentioned requirements, MEMS wideband phases detector can be in wider frequency sections
Stable detection performance is kept, has the potentiality of structural wideband phaselocked loop.
Invention content
Technical problem to be solved by the present invention lies in provide a kind of reasonable for structure based on the detection of MEMS wideband phases
The phaselocked loop of device realizes the locking of different frequency signals in broad frequency range.
In order to solve the above technical problems, the present invention provides a kind of phaselocked loop based on MEMS wideband phase detectors, packet
It is voltage-controlled to include MEMS wideband phases detector, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1, second
Oscillator VCO2, the first variable resistance R1 and the second adjustable resistance R2；Power supply VEIt is loaded into first by the first variable resistance R1
In voltage controlled oscillator VCO 1, while being loaded on direct current automatic growth control AGC amplifier by the second adjustable resistance R2；First
Voltage controlled oscillator VCO 1 generates reference signal, and the size by adjusting the first variable resistance R1 changes the first voltage controlled oscillator VCO 1
Control voltage VC1；Reference signal and feedback signal are loaded into the ground wire 2 and CPW signals of MEMS wideband phase detectors respectively
Two symmetrical input ports that line 3 forms, obtain DC voltage V related with phase difference, DC voltage V input direct-currents are automatic
Gain controls AGC amplifier, and amplified signal is the control voltage V of the second voltage controlled oscillator VCO 2C2, the second voltage controlled oscillator
The output signal of VCO2 is the feedback signal of phaselocked loop；The size for adjusting the second adjustable resistance R2 controls direct current automatic growth control
The gain of AGC amplifier adjusts the control voltage of the second voltage controlled oscillator VCO 2, controls the frequency of feedback signal；It is adjusted in synchronism
First variable resistance R1 and the second adjustable resistance R2 makes the output of the first voltage controlled oscillator VCO 1 and the second voltage controlled oscillator VCO 2
Frequency is identical, completes the locking to the reference signal of different frequency.
Preferably, reference signal and feedback signal are loaded into two input terminals of MEMS wideband phase detectors respectively
Mouthful, Vector modulation is carried out by work(clutch, composite signal is converted into related with phase difference straight by thermoelectric (al) type power sensor
Galvanic electricity presses V, is exported through direct current output electrode 11, this DC voltage V can be expressed as：Wherein K
For coefficient related with input signal amplitude, ωrefFor reference signal angular frequency, ωbackFor feedback signal angular frequency,It is intrinsic
Phase difference；The DC voltage V of MEMS wideband phase detectors output is input to direct current automatic gain control by first port 12
AGC amplifier processed is amplified, amplified DC voltage VC2It can be expressed as：Wherein A
For the gain coefficient of direct current automatic growth control AGC amplifier, amplified DC voltage VC2For the second voltage controlled oscillator VCO 2
Control voltage, pass through second port 13 control the second voltage controlled oscillator VCO 2 output frequency；Second voltage controlled oscillator exports
Frequencies omegaoIt can be expressed by following formula：By adjusting the second adjustable resistance R2,
Change the DC bias supplies V of direct current automatic growth control AGC amplifierCThe adjusting to gain coefficient A may be implemented, to change
Become the control voltage of the second voltage controlled oscillator VCO 2 and its corresponding output signal frequency；The output of second voltage controlled oscillator VCO 2
Signal is the feedback signal of phaselocked loop, and MEMS wideband phase detectors are inputted by third port 14.
Preferably, MEMS wideband phases detector is using GaAs1 as substrate, including work(clutch and thermoelectric (al) type power sensing
Device, work(clutch include ground wire 2, CPW signal wires 3, the first ACPS transmission lines 4, the 2nd ACPS transmission lines 5, the 3rd ACPS transmission lines 6
With isolation resistance 7, thermoelectric (al) type power sensor includes terminal resistance 8, thermoelectric pile semiconductor arm 9, thermoelectric pile metal arm 10, direct current
Output electrode 11；For MEMS wideband phases detector using GaAs substrate, ground wire 2 constitutes the input of work(clutch with CPW signal wires 3
And output port, the first ACPS transmission lines 4, the 2nd ACPS transmission lines 5 are mutually cascaded with the 3rd ACPS transmission lines 6, isolation resistance 7 divides
It is not arranged in the end of the first ACPS transmission lines 4, the 2nd ACPS transmission lines 5 and the 3rd ACPS transmission lines 6, terminal resistance 8 is arranged
At the output port of CPW signal wires 3, thermoelectric pile semiconductor arm 9 is sequentially connected with thermoelectric pile metal arm 10, constitutes thermoelectric pile,
Direct current output electrode 11 is connected to thermoelectric pile both ends.
Preferably, the characteristic impedance of the first ACPS transmission lines 4 is Z1, and the characteristic impedance of the 2nd ACPS transmission lines 5 is Z2, the
The characteristic impedance of three ACPS transmission lines is Z3.
Beneficial effects of the present invention are：The use of MEMS wideband phase detectors makes phaselocked loop have broadband character,
The locking to the reference signal of different frequency may be implemented；Voltage is controlled to voltage controlled oscillator by variable resistance and direct current is automatic
Gain controls the control of the gain of AGC amplifier, realizes that there are waves in circuit to the synchronous adjustment of reference signal and feedback signal
Locking can be also realized in the case of dynamic；Structure novel, it is easy to operate, it is compatible with GaAs monolithic integrated microwave circuits.
Description of the drawings
Fig. 1 is the phaselocked loop vertical view of the present invention.
Fig. 2 is the A-A ' of the phaselocked loop of the present invention to sectional view.
Fig. 3 is the B-B ' of the phaselocked loop of the present invention to sectional view.
Specific implementation mode
As shown in Figure 1,2 and 3, a kind of phaselocked loop based on MEMS wideband phase detectors, including MEMS broadband phases
Bit detector, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1, the second voltage controlled oscillator VCO 2, first
Variable resistance R1 and the second adjustable resistance R2；Power supply VEIt is loaded into the first voltage controlled oscillator VCO 1 by the first variable resistance R1
On, while being loaded on direct current automatic growth control AGC amplifier by the second adjustable resistance R2；First voltage controlled oscillator VCO 1
Reference signal is generated, the size by adjusting the first variable resistance R1 changes the control voltage V of the first voltage controlled oscillator VCO 1C1；
Reference signal and feedback signal be loaded into respectively MEMS wideband phase detectors ground wire 2 and CPW signal wires 3 form two
Symmetrical input port, obtains DC voltage V related with phase difference, and DC voltage V input direct-current automatic growth controls AGC is put
Big device, amplified signal are the control voltage V of the second voltage controlled oscillator VCO 2C2, the output letter of the second voltage controlled oscillator VCO 2
Number be phaselocked loop feedback signal；Adjust the size control direct current automatic growth control AGC amplifier of the second adjustable resistance R2
Gain adjusts the control voltage of the second voltage controlled oscillator VCO 2, controls the frequency of feedback signal；It is adjusted in synchronism the first variable resistance
R1 and the second adjustable resistance R2 keeps the first voltage controlled oscillator VCO 1 identical with the output frequency of the second voltage controlled oscillator VCO 2, complete
The locking of the reference signal of pairs of different frequency.
Reference signal and feedback signal are loaded into two input ports of MEMS wideband phase detectors respectively, pass through work(
Clutch carries out Vector modulation, and composite signal is converted into DC voltage V related with phase difference by thermoelectric (al) type power sensor, passes through
Direct current output electrode 11 exports, this DC voltage V can be expressed as：Wherein K is to believe with input
Number related coefficient of amplitude, ωrefFor reference signal angular frequency, ωbackFor feedback signal angular frequency,It is poor for proper phase；
The DC voltage V of MEMS wideband phase detectors output is input to direct current automatic growth control AGC by first port 12 and puts
Big device is amplified, amplified DC voltage VC2It can be expressed as：Wherein A be direct current from
The gain coefficient of dynamic gain control AGC amplifier, amplified DC voltage VC2For the control electricity of the second voltage controlled oscillator VCO 2
Pressure controls the output frequency of the second voltage controlled oscillator VCO 2 by second port 13；Second voltage controlled oscillator output frequency ωoIt can
To be expressed by following formula：By adjusting the second adjustable resistance R2, change direct current
The DC bias supplies V of automatic growth control AGC amplifierCThe adjusting to gain coefficient A may be implemented, to change the second pressure
Control the control voltage of oscillator VCO2 and its corresponding output signal frequency；The output signal of second voltage controlled oscillator VCO 2 is lock
The feedback signal of phase ring inputs MEMS wideband phase detectors by third port 14.
By synchronous control the first variable resistance R1 and the second adjustable resistance R2, the first voltage controlled oscillator VCO 1 and can be made
The output frequency of two voltage controlled oscillator VCOs 2 is equal, and feedback signal is consistent with the frequency of reference signal, constant phase difference, completes lock
It is fixed, obtain the phaselocked loop to work in broad frequency range.
MEMS wideband phases detector is using GaAs1 as substrate, including work(clutch and thermoelectric (al) type power sensor, work(clutch
Including ground wire 2, CPW signal wires 3, the first ACPS transmission lines 4, the 2nd ACPS transmission lines 5, the 3rd ACPS transmission lines 6 and isolation electricity
Resistance 7, thermoelectric (al) type power sensor includes terminal resistance 8, thermoelectric pile semiconductor arm 9, thermoelectric pile metal arm 10, direct current output electrode
11；For MEMS wideband phases detector using GaAs substrate, ground wire 2 constitutes the input and output side of work(clutch with CPW signal wires 3
Mouthful, the first ACPS transmission lines 4, the 2nd ACPS transmission lines 5 are mutually cascaded with the 3rd ACPS transmission lines 6, and isolation resistance 7 is separately positioned on
The end of first ACPS transmission lines 4, the 2nd ACPS transmission lines 5 and the 3rd ACPS transmission lines 6, terminal resistance 8 are arranged in CPW signals
At the output port of line 3, thermoelectric pile semiconductor arm 9 is sequentially connected with thermoelectric pile metal arm 10, constitutes thermoelectric pile, direct current output electricity
Pole 11 is connected to thermoelectric pile both ends.
The characteristic impedance of first ACPS transmission lines 4 is Z1, and the characteristic impedance of the 2nd ACPS transmission lines 5 is Z2, the 3rd ACPS
The characteristic impedance of transmission line is Z3.
The preparation method of the phaselocked loop based on MEMS wideband phase detectors of the present invention is as follows：
1) prepare GaAs substrates：Select Semi-insulating GaAs (GaAs) substrate of extension, wherein extension N+GaAs
Doping concentration be 1018cm-3, square resistance is 100~130 Ω/；
2) photoetching and the N+GaAs of extension is isolated, forms figure and the ohmic contact regions of the semiconductor thermocouple arm of thermoelectric pile；
3) N+GaAs is anti-carved, it is 10 to form its doping concentration17cm-3Thermoelectric pile semiconductor thermocouple arm；
4) photoetching：Removal will retain the photoresist in gold germanium ni au place；
5) gold germanium ni au is sputtered, thickness is altogether
6) it removes, forms the metal thermocouple arm of thermoelectric pile；
7) photoetching：Removal will retain the photoresist in tantalum nitride place；
8) tantalum nitride is sputtered, thickness is 1 μm；
9) it removes；
10) photoetching：Removal will retain the photoresist in the place of first layer gold；
11) evaporation first layer gold, thickness are 0.3 μm；
12) it removes, forms CPW signal wires, ACPS signal wires, ground wire, direct current output electrode；
13) tantalum nitride is anti-carved, terminal resistance is formed, square resistance is 25 Ω/；
14) titanium/gold/titanium is evaporated, thickness isDown payment of the evaporation for plating；
15) photoetching：The photoresist in place will be electroplated in removal；
16) plating second layer gold, thickness are 2 μm；
17) titanium/gold/titanium is anti-carved, down payment is corroded, forms CPW signal wires, ACPS signal wires, ground wire, direct current transportation pole；
18) the GaAs substrate backs are thinned to 100 μm；
19) the MEMS wideband phases detector of preparation is connected with other circuit elements, constitutes phaselocked loop.
Distinguish whether be the structure standard it is as follows：
The phaselocked loop based on MEMS wideband phase detectors of the present invention includes MEMS wideband phase detectors, direct current
Automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1 and the second voltage controlled oscillator VCO 2, the first variable resistance R1 and
The second adjustable resistance R2.MEMS wideband phase detectors realize broadband character using three section transmission line cascade structures.Direct current
Source VEIt is connected respectively to the first voltage controlled oscillator VCO 1 by the first variable resistance R1 and the second adjustable resistance R2 and direct current is automatic
Gain controls on AGC amplifier, and reference signal is generated by the first voltage controlled oscillator VCO 1, by adjusting the first variable resistance R1's
Size controls the frequency of reference signal.Reference signal and feedback signal include by being exported after MEMS wideband phase detectors
The DC voltage V of phase information is amplified through direct current automatic growth control AGC amplifier, generates the second voltage controlled oscillator
The gain of the control voltage of VCO2, direct current automatic growth control AGC amplifier is controlled by the second adjustable resistance R2, by adjusting the
The stool and urine of two variable resistance R2 can control the frequency of feedback signal, be adjusted in synchronism the first variable resistance R1 and the second adjustable resistance
R2 keeps the first voltage controlled oscillator VCO 1 consistent with the output frequency of the second voltage controlled oscillator VCO 2, completes locking, realizes in wideband
With the phaselocked loop to work in range.
Although the present invention is illustrated and has been described with regard to preferred embodiment, it is understood by those skilled in the art that
Without departing from scope defined by the claims of the present invention, variations and modifications can be carried out to the present invention.
Claims (4)
1. a kind of phaselocked loop based on MEMS wideband phase detectors, which is characterized in that including：MEMS wideband phases detect
Device, direct current automatic growth control AGC amplifier, the first voltage controlled oscillator VCO 1, the second voltage controlled oscillator VCO 2, first can power transformations
Hinder R1 and the second adjustable resistance R2；Power supply VEIt is loaded into the first voltage controlled oscillator VCO 1 by the first variable resistance R1, simultaneously
It is loaded on direct current automatic growth control AGC amplifier by the second adjustable resistance R2；First voltage controlled oscillator VCO 1 generates ginseng
Signal is examined, the size by adjusting the first variable resistance R1 changes the control voltage V of the first voltage controlled oscillator VCO 1C1；With reference to letter
Number and feedback signal be loaded into respectively MEMS wideband phase detectors ground wire (2) and CPW signal wires (3) form two it is right
The input port of title obtains DC voltage V related with phase difference, the AGC amplifications of DC voltage V input direct-current automatic growth controls
Device, amplified signal are the control voltage V of the second voltage controlled oscillator VCO 2C2, the output signal of the second voltage controlled oscillator VCO 2
For the feedback signal of phaselocked loop；Adjust the increasing of the size control direct current automatic growth control AGC amplifier of the second adjustable resistance R2
Benefit adjusts the control voltage of the second voltage controlled oscillator VCO 2, controls the frequency of feedback signal；It is adjusted in synchronism the first variable resistance R1
With the second adjustable resistance R2, keep the first voltage controlled oscillator VCO 1 identical with the output frequency of the second voltage controlled oscillator VCO 2, completes
Locking to the reference signal of different frequency.
2. the phaselocked loop as described in claim 1 based on MEMS wideband phase detectors, which is characterized in that reference signal and
Feedback signal is loaded into two input ports of MEMS wideband phase detectors respectively, and Vector modulation is carried out by work(clutch,
Composite signal is converted into DC voltage V related with phase difference by thermoelectric (al) type power sensor, through direct current output electrode (11)
Output, this DC voltage V are expressed as：Wherein K is coefficient related with input signal amplitude,
ωrefFor reference signal angular frequency, ωbackFor feedback signal angular frequency,It is poor for proper phase；MEMS wideband phase detectors
The DC voltage V of output is input to direct current automatic growth control AGC amplifier by first port (12) and is amplified, after amplification
DC voltage VC2It is expressed as：Wherein A is the increasing of direct current automatic growth control AGC amplifier
Beneficial coefficient, amplified DC voltage VC2For the control voltage of the second voltage controlled oscillator VCO 2, controlled by second port (13)
The output frequency of second voltage controlled oscillator VCO 2；Second voltage controlled oscillator output frequency ωoIt is expressed by following formula：By adjusting the second adjustable resistance R2, change direct current automatic growth control AGC
The DC bias supplies V of amplifierCThe adjusting to gain coefficient A is realized, to change the control of the second voltage controlled oscillator VCO 2
Voltage and its corresponding output signal frequency；The output signal of second voltage controlled oscillator VCO 2 is the feedback signal of phaselocked loop, is led to
Cross third port (14) input MEMS wideband phase detectors.
3. the phaselocked loop as described in claim 1 based on MEMS wideband phase detectors, which is characterized in that MEMS broadbands
Phase detectors are with GaAs (1) for substrate, including work(clutch and thermoelectric (al) type power sensor, work(clutch include ground wire (2), CPW
Signal wire (3), the first ACPS transmission lines (4), the 2nd ACPS transmission lines (5), the 3rd ACPS transmission lines (6) and isolation resistance (7),
Thermoelectric (al) type power sensor includes terminal resistance (8), thermoelectric pile semiconductor arm (9), thermoelectric pile metal arm (10), direct current output electricity
Pole (11)；Ground wire (2) constitutes the input and output port of work(clutch, the first ACPS transmission lines (4), second with CPW signal wires (3)
ACPS transmission lines (5) are mutually cascaded with the 3rd ACPS transmission lines (6), and isolation resistance (7) is separately positioned on the first ACPS transmission lines
(4), the end of the 2nd ACPS transmission lines (5) and the 3rd ACPS transmission lines (6), terminal resistance (8) are arranged in CPW signal wires (3)
Output port at, thermoelectric pile semiconductor arm (9) is sequentially connected with thermoelectric pile metal arm (10), constitute thermoelectric pile, direct current output
Electrode (11) is connected to thermoelectric pile both ends.
4. the phaselocked loop as claimed in claim 3 based on MEMS wideband phase detectors, which is characterized in that the first ACPS is passed
The characteristic impedance of defeated line (4) is Z1, and the characteristic impedance of the 2nd ACPS transmission lines (5) is Z2, the feature of the 3rd ACPS transmission lines (6)
Impedance is Z3.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610395751.7A CN106100634B (en) | 2016-06-06 | 2016-06-06 | Phaselocked loop based on MEMS wideband phase detectors |
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| CN201610395751.7A CN106100634B (en) | 2016-06-06 | 2016-06-06 | Phaselocked loop based on MEMS wideband phase detectors |
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| CN106100634B true CN106100634B (en) | 2018-10-23 |
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| CN106841784B (en) * | 2017-01-24 | 2019-03-19 | 东南大学 | Silicon-base micro-mechanical cantilever beam couples the online millimeter wave phase detectors of indirect heating |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103281074A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Phase-locked loop based on micromechanic indirect thermoelectric type power sensor and preparation method thereof |
| CN103346785A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase-locked loop based on micromechanical direct thermoelectric power sensors and preparation method thereof |
| US8643415B1 (en) * | 2012-10-22 | 2014-02-04 | Micrel, Inc. | Phase-locked loop having a constant damping ratio |
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| JP5092770B2 (en) * | 2008-01-29 | 2012-12-05 | 富士通セミコンダクター株式会社 | Phase lock loop circuit and delay lock loop circuit |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8643415B1 (en) * | 2012-10-22 | 2014-02-04 | Micrel, Inc. | Phase-locked loop having a constant damping ratio |
| CN103281074A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Phase-locked loop based on micromechanic indirect thermoelectric type power sensor and preparation method thereof |
| CN103346785A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase-locked loop based on micromechanical direct thermoelectric power sensors and preparation method thereof |
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