CN106057992A - LED epitaxial wafer with current blocking layer and manufacturing method thereof - Google Patents

LED epitaxial wafer with current blocking layer and manufacturing method thereof Download PDF

Info

Publication number
CN106057992A
CN106057992A CN201610606486.2A CN201610606486A CN106057992A CN 106057992 A CN106057992 A CN 106057992A CN 201610606486 A CN201610606486 A CN 201610606486A CN 106057992 A CN106057992 A CN 106057992A
Authority
CN
China
Prior art keywords
layer
barrier layer
substrate
current barrier
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610606486.2A
Other languages
Chinese (zh)
Other versions
CN106057992B (en
Inventor
王汉清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantong one choice Industrial Design Co., Ltd.
Original Assignee
王汉清
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 王汉清 filed Critical 王汉清
Priority to CN201610606486.2A priority Critical patent/CN106057992B/en
Publication of CN106057992A publication Critical patent/CN106057992A/en
Application granted granted Critical
Publication of CN106057992B publication Critical patent/CN106057992B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

The invention provides an LED epitaxial wafer with a current blocking layer. The LED epitaxial wafer comprises a substrate, a GaN epitaxial layer grown on the substrate in an epitaxial way, a current blocking layer formed in the non-etched area of the GaN epitaxial layer, and an ITO current extending layer deposited on the current blocking layer, wherein a ladder-shaped first electrode placing area is etched on the GaN epitaxial layer through dry etching, multiple conductive rings made of ITO material are spaced evenly and distributed in a central symmetry and radial way in the current blocking layer, and the top surfaces of the multiple conductive columns are flush with the top surface of the current blocking layer. Current is transmitted through the concentric conductive rings, and excessive concentration of current in the middle of electrodes is prevented.

Description

A kind of LED with current barrier layer and manufacture method thereof
Technical field
The present invention relates to semiconductor light emitting field, be specifically related to a kind of LED with current barrier layer and system thereof Make method.
Background technology
The semiconductor light-emitting elements used at present is mainly LED(light emitting diode), LED is usually and directly exists Electric current expands the growth electrode immediately above of layer, and at this moment, owing to the position of electrode is limited to, electric current will be largely focused on electrode Lower section, causes base part peripheral location not have electric current, the concentrations of this electric current can produce substantial amounts of heat, ultimately result in The inefficacy of LED.
Summary of the invention
Based on the problem solved in above-mentioned encapsulation, the invention provides a kind of LED with current barrier layer Manufacture method, specifically includes following steps:
(1) substrate is provided, grows GaN epitaxial layer over the substrate, then utilize dry etching to etch the first electrode and put Putting region, described placement region is stepped；
(2) the non-etch areas in described GaN epitaxial layer forms a photoresist layer；
(3) etch described photoresist layer, form a series of multiple open tubular column, in multiple open tubular columns, fill ITO many to be formed Individual conductive pole, the plurality of conductive pole is that center is radial, and centrosymmetry, and its center does not etches with described GaN epitaxial layer The center superposition in region, and the interval of two adjacent the plurality of conductive poles is equal, but the diameter of the plurality of conductive pole It is gradually increased from inside to outside；
(4) described photoresist layer is removed；The lamination of SiO2 and TiO2 is deposited to form electric current around the plurality of conductive pole Barrier layer, polishing end face makes the end face of described conducting ring flush with the end face of described current barrier layer；
(5) on described current barrier layer, deposit one layer of ITO electric current and expand layer；Thinning described substrate, and form one layer overleaf Bragg reflection film, to strengthen reflection；The making of LED is completed to this.
Wherein, the diameter of the plurality of conductive pole is gradually increased from inside to outside, is the arithmetic progression arrangement of 4 μm in equal difference, Wherein a diameter of 1 μm of the conductive pole of innermost circle.
Wherein, alternating growth thickness is the SiO2 of λ/4n1 and thickness is the TiO2 of λ/4n2, and growth cycle is 2-10, its Middle n1 is the refractive index of SiO2, and n2 is the refractive index of TiO2, and λ is the emission wavelength of this epitaxial wafer.
Wherein, described substrate is Sapphire Substrate.
Wherein, growth GaN epitaxial layer specifically includes over the substrate: on substrate, N-type GaN of silicon is mixed in growth successively Layer, multiple quantum well light emitting layer, mix the p-type GaN layer of magnesium.
Present invention also offers a kind of LED with current barrier layer, comprising:
Substrate；
Epitaxial growth GaN epitaxial layer over the substrate over the substrate, utilizes the first electrode that dry etching etches Placing region, described placement region is stepped；
It is formed at the current barrier layer not being etched on region of described GaN epitaxial layer；
In described current barrier layer, multiple conducting rings of the ITO material of uniform intervals, centrosymmetry radial distribution, the plurality of The end face of conductive pole flushes with the end face of described current barrier layer；
The ITO electric current being deposited on described current barrier layer expands layer.
Wherein, the diameter of the plurality of conductive pole is gradually increased from inside to outside, is the arithmetic progression arrangement of 4 μm in equal difference, Wherein a diameter of 1 μm of the conductive pole of innermost circle.
Wherein, the bragg reflection film that substrate back is formed it is additionally included in.
Advantages of the present invention is as follows:
(1) present invention utilizes centrosymmetric conductive pole to carry out electric current transmission, prevents electric current in the concentrations at the middle part of electrode；
(2) SiO2 that alternating growth thickness is λ/4n1 and the TiO2 that thickness is λ/4n2 is utilized to add strong reflection.
Accompanying drawing explanation
Fig. 1-7 is the manufacture method flow chart of the LED with current barrier layer of the present invention；
Fig. 8 is the structure chart after epitaxial wafer arranges electrode.
Detailed description of the invention
See Fig. 1-8, present invention firstly provides the manufacture method of a kind of LED with current barrier layer, tool Body comprises the steps:
Seeing Fig. 1, it is provided that a substrate 1, described substrate 1 is Sapphire Substrate；
See Fig. 2, described substrate 1 grows GaN epitaxial layer 2: the N-type GaN layer of silicon, volume are mixed in growth the most successively Sub-trap luminescent layer, mixes the p-type GaN layer of magnesium；Then utilize dry etching to etch the first electrode and place region 3, described rest area Territory is stepped；
Seeing Fig. 3, the non-etch areas in described GaN epitaxial layer 2 forms a photoresist layer 4；
See Fig. 4, etch described photoresist layer 4, form a series of open tubular column；ITO is filled multiple to be formed in open tubular column Conductive pole 5, the plurality of conductive pole 5 is radial in center, and centrosymmetry, and its center does not etches with described GaN epitaxial layer The center superposition in region, and the interval of two adjacent the plurality of conductive poles 5 is equal, but the plurality of conductive pole 5 is straight Footpath is gradually increased from inside to outside, is the arithmetic progression arrangement of 4 μm in equal difference, wherein a diameter of 1 μm of the conductive pole of innermost circle；
See Fig. 5, remove described photoresist layer 4；
See Fig. 6 a, deposition SiO around the plurality of conductive pole 52And TiO2To form current barrier layer 6, alternating growth Thickness is the SiO of λ/4n12It is the TiO of λ/4n2 with thickness2, growth cycle is 2-10, and wherein n1 is the refractive index of SiO2, n2 For the refractive index of TiO2, λ is the emission wavelength of this epitaxial wafer；Polishing end face makes the end face of the plurality of conductive pole 5 with described The end face of current barrier layer 6 flushes；Fig. 6 b shows the top view of Fig. 6 a；
See Fig. 7, described current barrier layer 6 deposits one layer of ITO electric current and expands layer 7；Thinning described substrate 1, and overleaf Form one layer of bragg reflection film 8, to strengthen reflection；The making of LED is completed to this
See Fig. 8, when above-mentioned epitaxial wafer is fabricated to LED chip, only need in the non-etch areas of described GaN epitaxial layer 2 and Etch areas forms electrode 9,10 respectively, wherein in the non-etch areas of the center of electrode 10 and described GaN epitaxial layer 2 The heart is overlapping.
It is last that it is noted that obviously above-described embodiment is only for clearly demonstrating example of the present invention, and also The non-restriction to embodiment.For those of ordinary skill in the field, can also do on the basis of the above description Go out change or the variation of other multi-form.Here without also cannot all of embodiment be given exhaustive.And thus drawn What Shen went out obviously changes or changes among still in protection scope of the present invention.

Claims (8)

1. there is a manufacture method for the LED of current barrier layer, specifically include following steps:
(1) substrate is provided, grows GaN epitaxial layer over the substrate, then utilize dry etching to etch the first electrode and put Putting region, described placement region is stepped；
(2) the non-etch areas in described GaN epitaxial layer forms a photoresist layer；
(3) etch described photoresist layer, form a series of multiple open tubular column, in multiple open tubular columns, fill ITO many to be formed Individual conductive pole, the plurality of conductive pole is that center is radial, and centrosymmetry, and its center does not etches with described GaN epitaxial layer The center superposition in region, and the interval of two adjacent the plurality of conductive poles is equal, but the diameter of the plurality of conductive pole It is gradually increased from inside to outside；
(4) described photoresist layer is removed；The lamination of SiO2 and TiO2 is deposited to form electric current around the plurality of conductive pole Barrier layer, polishing end face makes the end face of described conducting ring flush with the end face of described current barrier layer；
(5) on described current barrier layer, deposit one layer of ITO electric current and expand layer；Thinning described substrate, and form one layer overleaf Bragg reflection film, to strengthen reflection；The making of LED is completed to this.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that:, described The diameter of multiple conductive poles is gradually increased from inside to outside, is the arithmetic progression arrangement of 4 μm in equal difference, the wherein conductive pole of innermost circle A diameter of 1 μm.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that: alternately Growth thickness is the SiO2 of λ/4n1 and thickness is the TiO2 of λ/4n2, and growth cycle is 2-10, and wherein n1 is the refraction of SiO2 Rate, n2 is the refractive index of TiO2, and λ is the emission wavelength of this epitaxial wafer.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that: described Substrate is Sapphire Substrate.
The manufacture method of the LED with current barrier layer the most according to claim 1, it is characterised in that: in institute State Grown GaN epitaxial layer to specifically include: on substrate, the N-type GaN layer of silicon is mixed in growth successively, multiple quantum well light emitting layer, Mix the p-type GaN layer of magnesium.
6. there is a LED for current barrier layer, comprising:
Substrate；
Epitaxial growth GaN epitaxial layer over the substrate over the substrate, utilizes the first electrode that dry etching etches Placing region, described placement region is stepped；
It is formed at the current barrier layer not being etched on region of described GaN epitaxial layer；
In described current barrier layer, multiple conducting rings of the ITO material of uniform intervals, centrosymmetry radial distribution, the plurality of The end face of conductive pole flushes with the end face of described current barrier layer；
The ITO electric current being deposited on described current barrier layer expands layer.
The LED with current barrier layer the most according to claim 6, it is characterised in that: the plurality of conductive pole Diameter be gradually increased from inside to outside, in equal difference be 4 μm arithmetic progression arrangement, wherein a diameter of 1 μ of the conductive pole of innermost circle m。
The LED with current barrier layer the most according to claim 6, it is characterised in that: it is additionally included in the substrate back of the body The bragg reflection film that face is formed.
CN201610606486.2A 2016-07-29 2016-07-29 A kind of LED epitaxial wafer and its manufacturing method with current barrier layer Active CN106057992B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610606486.2A CN106057992B (en) 2016-07-29 2016-07-29 A kind of LED epitaxial wafer and its manufacturing method with current barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610606486.2A CN106057992B (en) 2016-07-29 2016-07-29 A kind of LED epitaxial wafer and its manufacturing method with current barrier layer

Publications (2)

Publication Number Publication Date
CN106057992A true CN106057992A (en) 2016-10-26
CN106057992B CN106057992B (en) 2018-07-03

Family

ID=57195879

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610606486.2A Active CN106057992B (en) 2016-07-29 2016-07-29 A kind of LED epitaxial wafer and its manufacturing method with current barrier layer

Country Status (1)

Country Link
CN (1) CN106057992B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107808913A (en) * 2017-10-27 2018-03-16 江西乾照光电有限公司 A kind of light emitting diode and preparation method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790753A (en) * 2004-12-15 2006-06-21 上海蓝光科技有限公司 Light-emitting diode and method of preparing the same
JP2007027540A (en) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device and illuminator using same
KR100809508B1 (en) * 2006-11-06 2008-04-01 서울옵토디바이스주식회사 Light emitting device having plane fresnel lens and fabrication method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1790753A (en) * 2004-12-15 2006-06-21 上海蓝光科技有限公司 Light-emitting diode and method of preparing the same
JP2007027540A (en) * 2005-07-20 2007-02-01 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device and illuminator using same
KR100809508B1 (en) * 2006-11-06 2008-04-01 서울옵토디바이스주식회사 Light emitting device having plane fresnel lens and fabrication method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107808913A (en) * 2017-10-27 2018-03-16 江西乾照光电有限公司 A kind of light emitting diode and preparation method
CN107808913B (en) * 2017-10-27 2019-06-04 江西乾照光电有限公司 A kind of light emitting diode and production method

Also Published As

Publication number Publication date
CN106057992B (en) 2018-07-03

Similar Documents

Publication Publication Date Title
JP6653665B2 (en) Semiconductor pixels, matrices of such pixels, semiconductor structures for manufacturing such pixels, and methods of making them
CN105552180B (en) A kind of production method of novel high-pressure LED
KR101863714B1 (en) Light-emitting device having patterned interface and the manufacturing method thereof
CN106025014B (en) A kind of LED epitaxial wafer and its manufacturing method with current barrier layer
WO2017185849A1 (en) Light-emitting element and method for preparing same
CN106057992A (en) LED epitaxial wafer with current blocking layer and manufacturing method thereof
CN103489978B (en) Light emitting diode and method for manufacturing the same
JP6262036B2 (en) Light emitting device
CN105895755A (en) Manufacturing method of GaN-based light emitting diode with strippable structure
TW201031017A (en) Light-emitting diode
CN106848027A (en) The preparation method of the vertical flip LED chips of high reliability
CN104659169A (en) Simple flip LED and production method thereof
CN209561369U (en) Miniature LED component and Minitype LED array
US20130130420A1 (en) Method of laser lift-off for leds
US9287463B2 (en) Method of manufacturing a light generating device and light generating device manufactured through the same
CN103050588A (en) LED (light emitting diode) and manufacturing method thereof
US9130087B2 (en) Light emitting diode having carbon nanotubes therein and method for manufacturing the same
CN103208567B (en) A kind of laminated type LED chip and its manufacture method
CN104409599B (en) LED chip and manufacturing method thereof
CN105742453A (en) Led chip and preparation method thereof
TWI523259B (en) The electrode contact structure of the light emitting diode
TWI566427B (en) Light-emitting device and manufacturing method thereof
CN203085625U (en) Light emitting diode chips with grooves
CN105655460B (en) Led chip and preparation method thereof
CN109411574B (en) Uniform semiconductor nanowire and nanosheet light emitting diodes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20180518

Address after: 226600 east side of the junction of development road and Ho Shun Road, Haian Economic Development Zone, Nantong, Jiangsu

Applicant after: Jiangsu painuo photoelectric Polytron Technologies Inc

Address before: 226300 266 Century Avenue, Nantong hi tech Zone, Nantong, Jiangsu

Applicant before: Wang Hanqing

GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190621

Address after: 226600 No. 8, Xiao Xing Road, Chengdong Town, Haian economic and Technological Development Zone, Nantong, Jiangsu

Patentee after: Nantong one choice Industrial Design Co., Ltd.

Address before: 226600 east side of the junction of development road and Ho Shun Road, Haian Economic Development Zone, Nantong, Jiangsu

Patentee before: Jiangsu painuo photoelectric Polytron Technologies Inc