CN106057917A - 一种高转化率的纳米太阳能电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种高转化率的纳米太阳能电池及其制备方法，包括衬底、多晶硅薄膜，衬底与多晶硅薄膜之间设有钝化层，钝化层表面设有氧化硅薄膜，氧化硅薄膜与多晶硅薄膜之间设有上电极；上电极与多晶硅薄膜之间设有P型硅基体，多晶硅薄膜上设有P‑n结，衬底设置在背面AI电极上。本发明通过设置钝化层，在钝化层上设置氧化硅薄膜，这种氧化硅薄膜可以释放在高电势下氮化硅薄膜中储存的正电荷，从而具有抗高电势下衰减的作用，并且提高太阳能电池的光电转换效率。
Description
技术领域
本发明涉及太阳能电池工程领域，具体涉及一种高转化率的纳米太阳能电池及其制备方法。
背景技术
光伏行业的相关技术人员为了提高太阳能电池的转化效率，在传统结构的基础上做了大量的技术创新及改进，例如已经研发出的一种结构包括表层、缓冲层、含至少一个P-N结的光吸收区、过渡层、P或N型区的集电栅和电极的非晶硅薄膜太阳能电池。这是一种受光面可以得到充分利用的结构，同时由于底部P-N结的集栅型排布，增加了P-N结的有效长度，从而提高了薄膜太阳能电池的转化率，然而其结构过于复杂，重复性不好；另一种利用N型晶体硅制成的单面电极太阳能电池，具有合理的结构，较高的转化效率，远远优于常规晶硅太阳能电池，然而优于硅片的脆性，考虑到产品的良率，在大规模生产中也不容易达到最理想的尺寸。
发明内容
本发明的目的在于提供一种高转化率的纳米太阳能电池及其制备方法，以解决现有技术中太阳能电池的电池光电转换率低等技术问题。
本发明通过下述技术方案实现：
一种高转化率的纳米太阳能电池，包括衬底、多晶硅薄膜，衬底与多晶硅薄膜之间设有钝化层，钝化层表面设有氧化硅薄膜，氧化硅薄膜与多晶硅薄膜之间设有上电极；上电极与多晶硅薄膜之间设有P型硅基体，多晶硅薄膜上设有P-n结，衬底设置在背面AI电极上。
优选，所述多晶硅薄膜为N型多晶硅薄膜，多晶硅薄膜的厚度为5—20微米。
优选，所述氧化硅薄膜的厚度为2—20nm，折射率为2.1—2.4。
优选，所述钝化层为透明导电的氧化物薄层，钝化层的厚度为55—65nm。
优选，所述衬底上设有增加透光率的绒毛层。
优选，所述衬底为非晶硅的玻璃层。
一种高转化率的纳米太阳能电池的制备方法，其特征在于：将衬底、钝化层、氧化硅薄膜、P型硅基体从上到下一次成型粘结，然后再衬底的背面粘结AI电极，粘结温度为200—500℃。
本发明与现有技术相比，具有如下的优点和有益效果：
本发明通过设置钝化层，在钝化层上设置氧化硅薄膜，这种氧化硅薄膜可以释放在高电势下氮化硅薄膜中储存的正电荷，从而具有抗高电势下衰减的作用，并且提高太阳能电池的光电转换效率。
附图说明
此处所说明的附图用来提供对本发明实施例的进一步理解，构成本申请的一部分，并不构成对本发明实施例的限定。在附图中：
图1为本发明结构示意图；
附图中标记及对应的零部件名称：
1-衬底，1-1-绒毛层，2-N型多晶硅薄膜，3-上电极，4-背电极，5-钝化层。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白，下面结合实施例和附图，对本发明作进一步的详细说明，本发明的示意性实施方式及其说明仅用于解释本发明，并不作为对本发明的限定。
实施例1：
如图1所示，本实施例所述的一种高转化率的纳米太阳能电池，包括衬底2、多晶硅薄膜6，衬底2与多晶硅薄膜6之间设有钝化层3，钝化层3表面设有氧化硅薄膜4，氧化硅薄膜4与多晶硅薄膜6之间设有上电极3；上电极3与多晶硅薄膜6之间设有P型硅基体，多晶硅薄膜6上设有P-n结，衬底2设置在背面AI电极1上。
其中，所述多晶硅薄膜6为N型多晶硅薄膜，多晶硅薄膜6的厚度为5—20微米。
其中，所述氧化硅薄膜4的厚度为2—20nm，折射率为2.1—2.4。
其中，所述钝化层3为透明导电的氧化物薄层，钝化层3的厚度为55—65nm。
其中，所述衬底2为非晶硅的玻璃层。
包括透明衬底1、N型多晶硅薄膜2、上电极3、背电极4和钝化层5，N型多晶硅薄膜2上制有P-n结，透明衬底1设在背电极4上，透明衬底1上设有钝化层5，在上电极3和N型多晶硅薄膜2之间设有N+掺杂层6。
一种高转化率的纳米太阳能电池的制备方法，将衬底2、钝化层3、氧化硅薄膜4、P型硅基体从上到下一次成型粘结，然后再衬底2的背面粘结AI电极1，粘结温度为200—500℃。
以上所述的具体实施方式，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施方式而已，并不用于限定本发明的保护范围，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (7)
1.一种高转化率的纳米太阳能电池，其特征在于，包括衬底（2）、多晶硅薄膜（6），衬底（2）与多晶硅薄膜（6）之间设有钝化层（3），钝化层（3）表面设有氧化硅薄膜（4），氧化硅薄膜（4）与多晶硅薄膜（6）之间设有上电极（3）；上电极（3）与多晶硅薄膜（6）之间设有P型硅基体，多晶硅薄膜（6）上设有P-n结，衬底（2）设置在背面AI电极（1）上。
2.根据权利要求1所述的一种高转化率的纳米太阳能电池，其特征在于：所述多晶硅薄膜（6）为N型多晶硅薄膜，多晶硅薄膜（6）的厚度为5—20微米。
3.根据权利要求2所述的一种高转化率的纳米太阳能电池，其特征在于：所述氧化硅薄膜（4）的厚度为2—20nm，折射率为2.1—2.4。
4.根据权利要求3所述的一种高转化率的纳米太阳能电池，其特征在于：所述钝化层（3）为透明导电的氧化物薄层，钝化层（3）的厚度为55—65nm。
5.根据权利要求4所述的一种高转化率的纳米太阳能电池，其特征在于：所述衬底（2）上设有增加透光率的绒毛层。
6.根据权利要求5所述的一种高转化率的纳米太阳能电池，其特征在于：所述衬底（2）为非晶硅的玻璃层。
7.一种权利要求1至6任意一项所述的一种高转化率的纳米太阳能电池的制备方法，其特征在于：将衬底（2）、钝化层（3）、氧化硅薄膜（4）、P型硅基体从上到下一次成型粘结，然后在衬底（2）的背面粘结AI电极（1），粘结温度为200—500℃。
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| CN112531034A (zh) * | 2019-08-28 | 2021-03-19 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池、太阳能电池板及制备方法 |
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| CN112531034A (zh) * | 2019-08-28 | 2021-03-19 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池、太阳能电池板及制备方法 |
| CN112531034B (zh) * | 2019-08-28 | 2022-10-21 | 泰州隆基乐叶光伏科技有限公司 | 一种太阳能电池、太阳能电池板及制备方法 |
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