CN106057926A - 具有叠层异质结结构的钝化发射极太阳电池及其制备方法 - Google Patents
具有叠层异质结结构的钝化发射极太阳电池及其制备方法 Download PDFInfo
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- CN106057926A CN106057926A CN201610713823.8A CN201610713823A CN106057926A CN 106057926 A CN106057926 A CN 106057926A CN 201610713823 A CN201610713823 A CN 201610713823A CN 106057926 A CN106057926 A CN 106057926A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 238000002161 passivation Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 239000000872 buffer Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 36
- 238000003475 lamination Methods 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 230000003139 buffering effect Effects 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012071 phase Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 238000009766 low-temperature sintering Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 4
- 238000010248 power generation Methods 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610713823.8A CN106057926A (zh) | 2016-08-24 | 2016-08-24 | 具有叠层异质结结构的钝化发射极太阳电池及其制备方法 |
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CN201610713823.8A CN106057926A (zh) | 2016-08-24 | 2016-08-24 | 具有叠层异质结结构的钝化发射极太阳电池及其制备方法 |
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CN106057926A true CN106057926A (zh) | 2016-10-26 |
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CN201610713823.8A Pending CN106057926A (zh) | 2016-08-24 | 2016-08-24 | 具有叠层异质结结构的钝化发射极太阳电池及其制备方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109004053A (zh) * | 2017-06-06 | 2018-12-14 | 中国科学院上海微系统与信息技术研究所 | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 |
CN109148614A (zh) * | 2017-06-16 | 2019-01-04 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池及其制备方法 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN110212060A (zh) * | 2019-05-21 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | 一种电池制备方法、电池、电池组件及太阳能供电站 |
CN110634961A (zh) * | 2018-05-31 | 2019-12-31 | 福建金石能源有限公司 | 一种双面钝化背接触异质结太阳电池及其制作方法 |
CN111509055A (zh) * | 2020-03-20 | 2020-08-07 | 中国科学院宁波材料技术与工程研究所 | 界面叠层薄膜及其制备方法和在钝化接触电池中的应用 |
CN113644157A (zh) * | 2021-08-10 | 2021-11-12 | 浙江大学 | 一种高效铸造类单晶硅双面太阳电池结构及其制备方法 |
CN114171629A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102064216A (zh) * | 2010-11-22 | 2011-05-18 | 晶澳(扬州)太阳能科技有限公司 | 一种新型晶体硅太阳电池及其制作方法 |
CN102064210A (zh) * | 2010-11-11 | 2011-05-18 | 陈哲艮 | 具有同质结和异质结的硅基双结太阳电池及其制备方法 |
CN102738291A (zh) * | 2012-07-07 | 2012-10-17 | 蚌埠玻璃工业设计研究院 | 一种硅基异质结双面太阳能电池及其制备方法 |
-
2016
- 2016-08-24 CN CN201610713823.8A patent/CN106057926A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102064210A (zh) * | 2010-11-11 | 2011-05-18 | 陈哲艮 | 具有同质结和异质结的硅基双结太阳电池及其制备方法 |
CN102064216A (zh) * | 2010-11-22 | 2011-05-18 | 晶澳(扬州)太阳能科技有限公司 | 一种新型晶体硅太阳电池及其制作方法 |
CN102738291A (zh) * | 2012-07-07 | 2012-10-17 | 蚌埠玻璃工业设计研究院 | 一种硅基异质结双面太阳能电池及其制备方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109004053A (zh) * | 2017-06-06 | 2018-12-14 | 中国科学院上海微系统与信息技术研究所 | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 |
CN109004053B (zh) * | 2017-06-06 | 2024-03-29 | 通威太阳能(成都)有限公司 | 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法 |
CN109148614A (zh) * | 2017-06-16 | 2019-01-04 | 国家电投集团科学技术研究院有限公司 | 硅异质结太阳电池及其制备方法 |
CN109148614B (zh) * | 2017-06-16 | 2024-01-09 | 国家电投集团新能源科技有限公司 | 硅异质结太阳电池及其制备方法 |
CN110634961A (zh) * | 2018-05-31 | 2019-12-31 | 福建金石能源有限公司 | 一种双面钝化背接触异质结太阳电池及其制作方法 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN110212060A (zh) * | 2019-05-21 | 2019-09-06 | 苏州联诺太阳能科技有限公司 | 一种电池制备方法、电池、电池组件及太阳能供电站 |
CN110212060B (zh) * | 2019-05-21 | 2021-12-10 | 苏州联诺太阳能科技有限公司 | 一种电池制备方法、电池、电池组件及太阳能供电站 |
CN111509055A (zh) * | 2020-03-20 | 2020-08-07 | 中国科学院宁波材料技术与工程研究所 | 界面叠层薄膜及其制备方法和在钝化接触电池中的应用 |
CN111509055B (zh) * | 2020-03-20 | 2024-03-05 | 中国科学院宁波材料技术与工程研究所 | 界面叠层薄膜及其制备方法和在钝化接触电池中的应用 |
CN114171629A (zh) * | 2020-08-21 | 2022-03-11 | 嘉兴阿特斯技术研究院有限公司 | 异质结太阳能电池及光伏组件 |
CN113644157A (zh) * | 2021-08-10 | 2021-11-12 | 浙江大学 | 一种高效铸造类单晶硅双面太阳电池结构及其制备方法 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: trina solar Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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Application publication date: 20161026 |