CN106031029B - 用于集成电路中的信号的功率放大的系统、方法及装置 - Google Patents

用于集成电路中的信号的功率放大的系统、方法及装置 Download PDF

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Publication number
CN106031029B
CN106031029B CN201580009878.4A CN201580009878A CN106031029B CN 106031029 B CN106031029 B CN 106031029B CN 201580009878 A CN201580009878 A CN 201580009878A CN 106031029 B CN106031029 B CN 106031029B
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China
Prior art keywords
power
armature winding
power amplifier
group
coupled
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CN201580009878.4A
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English (en)
Chinese (zh)
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CN106031029A (zh
Inventor
阿普·西瓦达斯
阿洛克·乔希
克里希纳斯瓦米·程加拉吉安
拉凯什·库马尔
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Texas Instruments Inc
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Texas Instruments Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/537—A transformer being used as coupling element between two amplifying stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/541—Transformer coupled at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
CN201580009878.4A 2014-01-27 2015-01-27 用于集成电路中的信号的功率放大的系统、方法及装置 Active CN106031029B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/165,251 2014-01-27
US14/165,251 US9450546B2 (en) 2014-01-27 2014-01-27 System, method and device for power amplification of a signal in an integrated circuit
PCT/US2015/013148 WO2015113069A1 (en) 2014-01-27 2015-01-27 System, method and device for power amplification of a signal in an integrated circuit

Publications (2)

Publication Number Publication Date
CN106031029A CN106031029A (zh) 2016-10-12
CN106031029B true CN106031029B (zh) 2019-10-22

Family

ID=53680038

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580009878.4A Active CN106031029B (zh) 2014-01-27 2015-01-27 用于集成电路中的信号的功率放大的系统、方法及装置

Country Status (4)

Country Link
US (1) US9450546B2 (enExample)
JP (1) JP6741370B2 (enExample)
CN (1) CN106031029B (enExample)
WO (1) WO2015113069A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128875B1 (en) * 2018-03-30 2018-11-13 Mitsubishi Electric Research Laboratories, Inc. Methods and system of a digital transmitter with reduced quantization noise
WO2022259892A1 (ja) * 2021-06-10 2022-12-15 株式会社村田製作所 増幅回路及び高周波回路
WO2023162655A1 (ja) * 2022-02-24 2023-08-31 株式会社村田製作所 ドハティ増幅回路
US12482915B2 (en) 2023-04-18 2025-11-25 Apple Inc. Transformer based series Doherty power amplifier
WO2025243345A1 (ja) * 2024-05-20 2025-11-27 株式会社ソシオネクスト 出力合成用トランス回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294955B1 (en) * 2000-04-07 2001-09-25 Harris Corporation Apparatus and method for use in disconnecting and/or replacing one of a plurality of power amplifiers in a transmitter while the transmitter is operating
CN101490938A (zh) * 2006-07-07 2009-07-22 剑桥半导体有限公司 开关模式电源系统
CN102459863A (zh) * 2009-05-08 2012-05-16 费德罗-莫格尔点火公司 具有自调节功率放大器的电晕点火系统

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
FR1495534A (fr) 1966-07-29 1967-09-22 Thomson Houston Comp Francaise Perfectionnements aux amplificateurs de puissance à transistors
JPS5992608A (ja) * 1982-11-19 1984-05-28 Oki Electric Ind Co Ltd 電力増幅回路
US4965530A (en) * 1989-09-26 1990-10-23 General Electric Company Parallelled amplifier with switched isolation resistors
RU2117381C1 (ru) 1997-03-12 1998-08-10 Научно-производственное предприятие "Полет" Усилитель мощности радиопередатчика
AU746940B2 (en) * 1998-04-02 2002-05-09 Ericsson Inc. Hybrid chireix/doherty amplifiers power waveform synthesis
US7952433B2 (en) * 2008-11-25 2011-05-31 Samsung Electro-Mechanics Company Power amplifiers with discrete power control
JP5459169B2 (ja) * 2010-09-30 2014-04-02 富士通株式会社 増幅回路
KR101197904B1 (ko) * 2011-04-04 2012-11-05 삼성전기주식회사 전력 결합기, 이를 갖는 전력 증폭 모듈 및 신호 송수신 모듈
US9306502B2 (en) * 2011-05-09 2016-04-05 Qualcomm Incorporated System providing switchable impedance transformer matching for power amplifiers
JP5719259B2 (ja) * 2011-09-06 2015-05-13 ルネサスエレクトロニクス株式会社 高周波電力増幅装置
JP5319006B2 (ja) * 2012-10-10 2013-10-16 ルネサスエレクトロニクス株式会社 電力増幅回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294955B1 (en) * 2000-04-07 2001-09-25 Harris Corporation Apparatus and method for use in disconnecting and/or replacing one of a plurality of power amplifiers in a transmitter while the transmitter is operating
CN101490938A (zh) * 2006-07-07 2009-07-22 剑桥半导体有限公司 开关模式电源系统
CN102459863A (zh) * 2009-05-08 2012-05-16 费德罗-莫格尔点火公司 具有自调节功率放大器的电晕点火系统

Also Published As

Publication number Publication date
US9450546B2 (en) 2016-09-20
JP6741370B2 (ja) 2020-08-19
JP2017509224A (ja) 2017-03-30
US20150214907A1 (en) 2015-07-30
WO2015113069A1 (en) 2015-07-30
CN106031029A (zh) 2016-10-12

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