JP6741370B2 - 集積回路における信号の電力増幅のためのシステム、方法、及びデバイス - Google Patents

集積回路における信号の電力増幅のためのシステム、方法、及びデバイス Download PDF

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JP6741370B2
JP6741370B2 JP2016548635A JP2016548635A JP6741370B2 JP 6741370 B2 JP6741370 B2 JP 6741370B2 JP 2016548635 A JP2016548635 A JP 2016548635A JP 2016548635 A JP2016548635 A JP 2016548635A JP 6741370 B2 JP6741370 B2 JP 6741370B2
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power
primary
primary winding
winding
integrated circuit
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Japanese (ja)
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JP2017509224A5 (enExample
JP2017509224A (ja
Inventor
シヴァダス アプ
シヴァダス アプ
ジョシ アロック
ジョシ アロック
ティアガラジャン クリシュナスワミ
ティアガラジャン クリシュナスワミ
クマール ラカシ
クマール ラカシ
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/537A transformer being used as coupling element between two amplifying stages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/541Transformer coupled at the output of an amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21145Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7236Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
JP2016548635A 2014-01-27 2015-01-27 集積回路における信号の電力増幅のためのシステム、方法、及びデバイス Active JP6741370B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/165,251 2014-01-27
US14/165,251 US9450546B2 (en) 2014-01-27 2014-01-27 System, method and device for power amplification of a signal in an integrated circuit
PCT/US2015/013148 WO2015113069A1 (en) 2014-01-27 2015-01-27 System, method and device for power amplification of a signal in an integrated circuit

Publications (3)

Publication Number Publication Date
JP2017509224A JP2017509224A (ja) 2017-03-30
JP2017509224A5 JP2017509224A5 (enExample) 2018-03-01
JP6741370B2 true JP6741370B2 (ja) 2020-08-19

Family

ID=53680038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016548635A Active JP6741370B2 (ja) 2014-01-27 2015-01-27 集積回路における信号の電力増幅のためのシステム、方法、及びデバイス

Country Status (4)

Country Link
US (1) US9450546B2 (enExample)
JP (1) JP6741370B2 (enExample)
CN (1) CN106031029B (enExample)
WO (1) WO2015113069A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10128875B1 (en) * 2018-03-30 2018-11-13 Mitsubishi Electric Research Laboratories, Inc. Methods and system of a digital transmitter with reduced quantization noise
WO2022259892A1 (ja) * 2021-06-10 2022-12-15 株式会社村田製作所 増幅回路及び高周波回路
WO2023162655A1 (ja) * 2022-02-24 2023-08-31 株式会社村田製作所 ドハティ増幅回路
US12482915B2 (en) 2023-04-18 2025-11-25 Apple Inc. Transformer based series Doherty power amplifier
WO2025243345A1 (ja) * 2024-05-20 2025-11-27 株式会社ソシオネクスト 出力合成用トランス回路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1495534A (fr) 1966-07-29 1967-09-22 Thomson Houston Comp Francaise Perfectionnements aux amplificateurs de puissance à transistors
JPS5992608A (ja) * 1982-11-19 1984-05-28 Oki Electric Ind Co Ltd 電力増幅回路
US4965530A (en) * 1989-09-26 1990-10-23 General Electric Company Parallelled amplifier with switched isolation resistors
RU2117381C1 (ru) 1997-03-12 1998-08-10 Научно-производственное предприятие "Полет" Усилитель мощности радиопередатчика
AU746940B2 (en) * 1998-04-02 2002-05-09 Ericsson Inc. Hybrid chireix/doherty amplifiers power waveform synthesis
US6294955B1 (en) 2000-04-07 2001-09-25 Harris Corporation Apparatus and method for use in disconnecting and/or replacing one of a plurality of power amplifiers in a transmitter while the transmitter is operating
GB2439997A (en) * 2006-07-07 2008-01-16 Cambridge Semiconductor Ltd Estimating the output current of a switch mode power supply
US7952433B2 (en) * 2008-11-25 2011-05-31 Samsung Electro-Mechanics Company Power amplifiers with discrete power control
BRPI1011433A2 (pt) * 2009-05-08 2016-03-15 Federal Mogul Ignition Co "circuito amplificador de potência, sistema de ignição corona, e, motor de combustão interna"
JP5459169B2 (ja) * 2010-09-30 2014-04-02 富士通株式会社 増幅回路
KR101197904B1 (ko) * 2011-04-04 2012-11-05 삼성전기주식회사 전력 결합기, 이를 갖는 전력 증폭 모듈 및 신호 송수신 모듈
US9306502B2 (en) * 2011-05-09 2016-04-05 Qualcomm Incorporated System providing switchable impedance transformer matching for power amplifiers
JP5719259B2 (ja) * 2011-09-06 2015-05-13 ルネサスエレクトロニクス株式会社 高周波電力増幅装置
JP5319006B2 (ja) * 2012-10-10 2013-10-16 ルネサスエレクトロニクス株式会社 電力増幅回路

Also Published As

Publication number Publication date
US9450546B2 (en) 2016-09-20
CN106031029B (zh) 2019-10-22
JP2017509224A (ja) 2017-03-30
US20150214907A1 (en) 2015-07-30
WO2015113069A1 (en) 2015-07-30
CN106031029A (zh) 2016-10-12

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