JP6741370B2 - 集積回路における信号の電力増幅のためのシステム、方法、及びデバイス - Google Patents
集積回路における信号の電力増幅のためのシステム、方法、及びデバイス Download PDFInfo
- Publication number
- JP6741370B2 JP6741370B2 JP2016548635A JP2016548635A JP6741370B2 JP 6741370 B2 JP6741370 B2 JP 6741370B2 JP 2016548635 A JP2016548635 A JP 2016548635A JP 2016548635 A JP2016548635 A JP 2016548635A JP 6741370 B2 JP6741370 B2 JP 6741370B2
- Authority
- JP
- Japan
- Prior art keywords
- power
- primary
- primary winding
- winding
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21145—Output signals are combined by switching a plurality of paralleled power amplifiers to a common output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7236—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers by (a ) switch(es)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/165,251 | 2014-01-27 | ||
| US14/165,251 US9450546B2 (en) | 2014-01-27 | 2014-01-27 | System, method and device for power amplification of a signal in an integrated circuit |
| PCT/US2015/013148 WO2015113069A1 (en) | 2014-01-27 | 2015-01-27 | System, method and device for power amplification of a signal in an integrated circuit |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017509224A JP2017509224A (ja) | 2017-03-30 |
| JP2017509224A5 JP2017509224A5 (enExample) | 2018-03-01 |
| JP6741370B2 true JP6741370B2 (ja) | 2020-08-19 |
Family
ID=53680038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016548635A Active JP6741370B2 (ja) | 2014-01-27 | 2015-01-27 | 集積回路における信号の電力増幅のためのシステム、方法、及びデバイス |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9450546B2 (enExample) |
| JP (1) | JP6741370B2 (enExample) |
| CN (1) | CN106031029B (enExample) |
| WO (1) | WO2015113069A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10128875B1 (en) * | 2018-03-30 | 2018-11-13 | Mitsubishi Electric Research Laboratories, Inc. | Methods and system of a digital transmitter with reduced quantization noise |
| WO2022259892A1 (ja) * | 2021-06-10 | 2022-12-15 | 株式会社村田製作所 | 増幅回路及び高周波回路 |
| WO2023162655A1 (ja) * | 2022-02-24 | 2023-08-31 | 株式会社村田製作所 | ドハティ増幅回路 |
| US12482915B2 (en) | 2023-04-18 | 2025-11-25 | Apple Inc. | Transformer based series Doherty power amplifier |
| WO2025243345A1 (ja) * | 2024-05-20 | 2025-11-27 | 株式会社ソシオネクスト | 出力合成用トランス回路 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1495534A (fr) | 1966-07-29 | 1967-09-22 | Thomson Houston Comp Francaise | Perfectionnements aux amplificateurs de puissance à transistors |
| JPS5992608A (ja) * | 1982-11-19 | 1984-05-28 | Oki Electric Ind Co Ltd | 電力増幅回路 |
| US4965530A (en) * | 1989-09-26 | 1990-10-23 | General Electric Company | Parallelled amplifier with switched isolation resistors |
| RU2117381C1 (ru) | 1997-03-12 | 1998-08-10 | Научно-производственное предприятие "Полет" | Усилитель мощности радиопередатчика |
| AU746940B2 (en) * | 1998-04-02 | 2002-05-09 | Ericsson Inc. | Hybrid chireix/doherty amplifiers power waveform synthesis |
| US6294955B1 (en) | 2000-04-07 | 2001-09-25 | Harris Corporation | Apparatus and method for use in disconnecting and/or replacing one of a plurality of power amplifiers in a transmitter while the transmitter is operating |
| GB2439997A (en) * | 2006-07-07 | 2008-01-16 | Cambridge Semiconductor Ltd | Estimating the output current of a switch mode power supply |
| US7952433B2 (en) * | 2008-11-25 | 2011-05-31 | Samsung Electro-Mechanics Company | Power amplifiers with discrete power control |
| BRPI1011433A2 (pt) * | 2009-05-08 | 2016-03-15 | Federal Mogul Ignition Co | "circuito amplificador de potência, sistema de ignição corona, e, motor de combustão interna" |
| JP5459169B2 (ja) * | 2010-09-30 | 2014-04-02 | 富士通株式会社 | 増幅回路 |
| KR101197904B1 (ko) * | 2011-04-04 | 2012-11-05 | 삼성전기주식회사 | 전력 결합기, 이를 갖는 전력 증폭 모듈 및 신호 송수신 모듈 |
| US9306502B2 (en) * | 2011-05-09 | 2016-04-05 | Qualcomm Incorporated | System providing switchable impedance transformer matching for power amplifiers |
| JP5719259B2 (ja) * | 2011-09-06 | 2015-05-13 | ルネサスエレクトロニクス株式会社 | 高周波電力増幅装置 |
| JP5319006B2 (ja) * | 2012-10-10 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 電力増幅回路 |
-
2014
- 2014-01-27 US US14/165,251 patent/US9450546B2/en active Active
-
2015
- 2015-01-27 CN CN201580009878.4A patent/CN106031029B/zh active Active
- 2015-01-27 WO PCT/US2015/013148 patent/WO2015113069A1/en not_active Ceased
- 2015-01-27 JP JP2016548635A patent/JP6741370B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US9450546B2 (en) | 2016-09-20 |
| CN106031029B (zh) | 2019-10-22 |
| JP2017509224A (ja) | 2017-03-30 |
| US20150214907A1 (en) | 2015-07-30 |
| WO2015113069A1 (en) | 2015-07-30 |
| CN106031029A (zh) | 2016-10-12 |
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