CN106030823B - 薄膜晶体管 - Google Patents

薄膜晶体管 Download PDF

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Publication number
CN106030823B
CN106030823B CN201580009803.6A CN201580009803A CN106030823B CN 106030823 B CN106030823 B CN 106030823B CN 201580009803 A CN201580009803 A CN 201580009803A CN 106030823 B CN106030823 B CN 106030823B
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China
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Expired - Fee Related
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CN201580009803.6A
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English (en)
Chinese (zh)
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CN106030823A (zh
Inventor
泷泽裕雄
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Fujifilm Corp
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Fujifilm Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
CN201580009803.6A 2014-03-07 2015-02-26 薄膜晶体管 Expired - Fee Related CN106030823B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014045168A JP6255651B2 (ja) 2014-03-07 2014-03-07 薄膜トランジスタ
JP2014-045168 2014-03-07
PCT/JP2015/055704 WO2015133372A1 (fr) 2014-03-07 2015-02-26 Transistor à film mince

Publications (2)

Publication Number Publication Date
CN106030823A CN106030823A (zh) 2016-10-12
CN106030823B true CN106030823B (zh) 2019-02-15

Family

ID=54055180

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580009803.6A Expired - Fee Related CN106030823B (zh) 2014-03-07 2015-02-26 薄膜晶体管

Country Status (6)

Country Link
US (1) US9755160B2 (fr)
EP (1) EP3116033B1 (fr)
JP (1) JP6255651B2 (fr)
KR (1) KR101931863B1 (fr)
CN (1) CN106030823B (fr)
WO (1) WO2015133372A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9882023B2 (en) * 2016-02-29 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Sidewall spacers for self-aligned contacts
CN109716491B (zh) * 2016-09-16 2023-06-09 东丽株式会社 场效应晶体管的制造方法及无线通信设备的制造方法
JP7070826B2 (ja) * 2017-02-28 2022-05-18 国立大学法人東海国立大学機構 半導体ナノ粒子およびその製造方法ならびに発光デバイス
WO2018159699A1 (fr) * 2017-02-28 2018-09-07 国立大学法人名古屋大学 Nanoparticules semi-conductrices ainsi que procédé de fabrication de celles-ci, et dispositif luminescent
EP3544047A3 (fr) * 2018-03-19 2019-11-20 Ricoh Company, Ltd. Liquide de revêtement pour la formation d'oxyde, procédé de production d'un film d'oxyde et procédé de production d'un transistor à effet de champ
CN109037031B (zh) * 2018-07-11 2021-11-19 华东师范大学 一种掺镍氧化铜薄膜晶体管及制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1630024A (zh) * 1996-01-19 2005-06-22 株式会社半导体能源研究所 半导体器件及其制造方法
CN102089870A (zh) * 2008-03-18 2011-06-08 东丽株式会社 栅极绝缘材料、栅极绝缘膜及有机场效应型晶体管
CN102237493A (zh) * 2011-06-23 2011-11-09 康佳集团股份有限公司 有机薄膜晶体管制造中的栅介质材料的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5037841B2 (ja) 2005-03-25 2012-10-03 キヤノン株式会社 有機半導体素子、電界効果型トランジスタおよびそれらの製造方法
JP2007027524A (ja) * 2005-07-20 2007-02-01 Sony Corp 有機絶縁膜の形成方法、有機絶縁膜、半導体装置の製造方法、および半導体装置
JPWO2007023612A1 (ja) * 2005-08-26 2009-02-26 コニカミノルタホールディングス株式会社 薄膜トランジスタ
KR101249090B1 (ko) * 2006-11-14 2013-03-29 삼성전자주식회사 유기 절연막 형성용 조성물, 이를 이용하여 제조된 유기절연막
JP5564951B2 (ja) * 2010-01-05 2014-08-06 Ｊｓｒ株式会社 有機半導体配向用組成物、有機半導体配向膜、有機半導体素子及びその製造方法
JP2011178832A (ja) * 2010-02-26 2011-09-15 Dic Corp 紫外線硬化型インクジェット記録用インク、それから得られた絶縁膜、電子素子及び電子素子の製造方法
JP5728908B2 (ja) * 2010-11-30 2015-06-03 東レ株式会社 ゲート絶縁材料、ゲート絶縁膜、および電界効果型トランジスタ。
US8643001B2 (en) * 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition
US9379341B2 (en) * 2012-08-24 2016-06-28 Osaka University Organic thin film transistor and method for producing same
JP5896935B2 (ja) * 2012-08-27 2016-03-30 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1630024A (zh) * 1996-01-19 2005-06-22 株式会社半导体能源研究所 半导体器件及其制造方法
CN102089870A (zh) * 2008-03-18 2011-06-08 东丽株式会社 栅极绝缘材料、栅极绝缘膜及有机场效应型晶体管
CN102237493A (zh) * 2011-06-23 2011-11-09 康佳集团股份有限公司 有机薄膜晶体管制造中的栅介质材料的制备方法

Also Published As

Publication number Publication date
EP3116033A4 (fr) 2017-03-22
CN106030823A (zh) 2016-10-12
US20160351824A1 (en) 2016-12-01
WO2015133372A1 (fr) 2015-09-11
JP2015170759A (ja) 2015-09-28
KR101931863B1 (ko) 2019-03-13
EP3116033A1 (fr) 2017-01-11
EP3116033B1 (fr) 2020-03-25
JP6255651B2 (ja) 2018-01-10
KR20160105524A (ko) 2016-09-06
US9755160B2 (en) 2017-09-05

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Granted publication date: 20190215