CN106025019A - Light-emitting diode epitaxial structure with adjustable warping growth process - Google Patents
Light-emitting diode epitaxial structure with adjustable warping growth process Download PDFInfo
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- CN106025019A CN106025019A CN201610425763.XA CN201610425763A CN106025019A CN 106025019 A CN106025019 A CN 106025019A CN 201610425763 A CN201610425763 A CN 201610425763A CN 106025019 A CN106025019 A CN 106025019A
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- 238000000034 method Methods 0.000 title abstract description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000001105 regulatory effect Effects 0.000 claims description 35
- 150000001875 compounds Chemical class 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000001143 conditioned effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The invention discloses a light-emitting diode epitaxial structure with an adjustable warping growth process. A buffer layer, an unintentionally doped layer, a composite adjustment layer, a first type conductive layer, an active layer, an electron blocking layer, a second type conductive layer and an ohmic contact layer sequentially grow on a substrate from bottom to top; and the composite adjustment layer is one of GaInN/GaN/AlGaN and AlGaN/GaN/GaInN. By the light-emitting diode epitaxial structure, the problems of epitaxial wafer bending caused by a temperature change or an internal stress problem when epitaxial layers with different functions grow in the epitaxial growth process, and an abnormal epitaxial surface and the abnormal electrical property caused by an epitaxial wafer bending increase are solved.
Description
Technical field
The present invention relates to LED technology field, refer in particular to a kind of light emitting diode epitaxial structure with growth course scalable warpage.
Background technology
As it is shown in figure 1, the conventional light emitting diodes epitaxial structure that prior art discloses, using PVD to be deposited with one layer of cushion 20 over the substrate 10, cushion 20 is AlN cushion, or is GaN cushion, or is AlGaN cushion；Cushion 20 grows involuntary doped layer (uGaN) 30；Involuntary doped layer 30 grows the first type conductive layer (nGaN) 40；First type conductive layer (nGaN) 40 grows active layer (MQW) 50；Active layer (MQW) 50 grows Second-Type conductive layer (pGaN) 60；At Second-Type conductive layer (pGaN) 60 growth ohmic contact layer (ITO) 70.
As shown in Figure 2 a, when growing involuntary doped layer (uGaN) on the buffer layer, if warpage is too big, substrate during growth active layer (MQW) can be caused also in concave curved state；As shown in Figure 2 b, when growing involuntary doped layer (uGaN) on the buffer layer, if warpage is moderate, substrate during growth active layer (MQW) may be at formation state；As shown in Figure 2 c, when growing involuntary doped layer (uGaN) on the buffer layer, if warpage is less than normal, substrate during growth active layer (MQW) can be caused also in convex curved type state.
Described conventional epitaxial structure and growth technique regulate the warpage of epitaxial wafer by inserting one layer of AlGaN at involuntary doped layer (uGaN) or the first type conductive layer (nGaN) and play filtration dislocation, the effect of current blocking.If but the involuntary doped layer uGaN process of epitaxial wafer growth is less than normally recessed, so this layer AlGaN can cause growing during MQW the most convex, causes the MQW growth uniformity of whole epitaxial wafer to be deteriorated, and crystal mass declines, thus causing the uniformity of wavelength to be deteriorated, luminous efficiency declines.The product yield ultimately resulting in light emitting diode is poor.
Owing to cushion is usually arranged as one layer, therefore, it is difficult to warpage when growing involuntary doped layer (uGaN) on the buffer layer moderate, it is impossible to carrying out warpage adjustment, and then make the warpage of epitaxial wafer in epitaxial process change instability, the process window caused narrows；Thus reduce LED chip brightness and increase manufacturing cost.
Summary of the invention
It is an object of the invention to provide a kind of light emitting diode epitaxial structure with growth course scalable warpage, to solve the substrate epitaxial wafer bending that variations in temperature and internal stress problem cause when epitaxial process is due to the epitaxial layer of growth difference in functionality, and owing to epitaxial wafer bends the epitaxial surface exception and electrical property abnormal problem becoming big and cause.
For reaching above-mentioned purpose, the solution of the present invention is:
A kind of light emitting diode epitaxial structure with growth course scalable warpage, Grown cushion, involuntary doped layer is grown on cushion, growing mixed regulating course on involuntary doped layer, grow the first type conductive layer on compound regulating course, the first type conductive layer grows active layer, active layer grows electronic barrier layer, grow Second-Type conductive layer on electronic barrier layer, Second-Type conductive layer grows ohmic contact layer；Compound regulating course is the one in GaInN/GaN/AlGaN, AlGaN/GaN/GaInN.
Further, substrate is large-size sapphire substrate.
Further, the thickness 200nm of compound regulating course.
Further, when compound regulating course is configured to GaInN/GaN/AlGaN epitaxial structure, thickness 0 < d3 < 150nm of the thickness 0 < d2 < 30nm, AlGaN of the thickness 0 < d1 < 150nm, GaN of GaInN.
A kind of LED epitaxial growing method with growth course scalable warpage, comprises the following steps:
One, use MOCVD at 530-570 DEG C, 500-600 Torr, growth rate be less than 2um/h, rotating speed less than 500r/h epitaxial conditions under at substrate top surface grown buffer layer；
Two, epitaxial growth temperature is to being increased to more than 1000 DEG C, and 100-500 Torr, growth rate is higher than 3 um/h, the rotating speed involuntary doped layer of conditioned growth higher than 700r/h；
Three, each Rotating fields of growing mixed regulating course on involuntary doped layer, compound regulating course is the one in GaInN/GaN/AlGaN, AlGaN/GaN/GaInN: 1, in epitaxial wafer growth course, the warp value of involuntary doped layer (uGaN) is the most convex when being growth MQW higher than-60, improved by In component in GaInN layer or thickness increases, and reducing the Al component of AlGaN layer and thickness thinning thereof, the stress of epitaxial wafer can become being more likely to concavity warpage, tends to smooth during growth MQW；2, in epitaxial wafer growth course, inclined concavity when the warp value of involuntary doped layer (uGaN) is growth MQW less than-110, improved by Al component in AlGaN layer or thickness increases, and reduce the raising of In component and thickness thinning in GaInN layer, the stress of epitaxial wafer can become being more likely to convex warpage, tends to smooth during growth MQW；3, in epitaxial wafer growth course, tending to smooth time when the warp value of involuntary doped layer (uGaN) occupy-110 to-60 for growth MQW, in GaInN, AlGaN layer, In, Al component reduces and thickness thinning；
Four, compound regulating course grows the first type conductive layer；
Five, epitaxial growth temperature is reduced to less than 800 DEG C, and pressure is less than 300 Torrs, and the rotating speed condition higher than 800r/h grows active layer on the first type conductive layer；
Six, epitaxial growth temperature is elevated above 900 DEG C and grows electronic barrier layer, Second-Type conductive layer and ohmic contact layer successively at active layer.
Further, the variation tendency of compound regulating course epitaxial growth temperature: growth AlGaN material temperature is less than 1000 DEG C；Growth GaN material temperature is higher than 1000 DEG C；Growth GaInN material temperature is less than 1000 DEG C.
Further, the variation tendency of compound regulating course epitaxial growth pressure: growth AlGaN material pressure is less than 150 Torrs；Growth GaN material pressure range 150-300 Torr；Growth GaInN material pressure is less than 150 Torrs.
Further, the variation tendency of compound regulating course epitaxial growth deep bid rotating speed: growth AlGaN material rotating speed is less than 800r/h；Growth GaN material rotating speed is higher than 800r/h；Growth GaInN material rotating speed is less than 800r/h.
Further, the variation tendency of compound regulating course epitaxial growth rate: growth AlGaN material growth rate is less than 2um/h；Growth GaN material growth rate is higher than 4um/h；Growth GaInN Material growth speed is less than 1um/h.
After using such scheme, it is the one in GaInN/GaN/AlGaN, AlGaN/GaN/GaInN that the present invention is combined regulating course.Therefore, compound regulating course can be in epitaxial process by the component of the compound regulating course of change and thickness, the warpage situation of regulation epitaxial wafer, and reaching the epitaxial wafer when active region growth is to tend to smooth purpose, is effectively improved photoelectric properties and the product yield of epitaxial wafer.And can be implemented in epitaxial layer growth process online change warpage situation: the warpage situation of epitaxial wafer is judged by the warpage curve of MOCVD monitoring growth situation.1, in the situation that epitaxial wafer growth course is the most convex, can be online by adjusting In component or the thickness of wherein GaInN layer so that the STRESS VARIATION of epitaxial wafer is that warpage is more likely to concavity.Improve the state that epitaxial wafer growth is the most convex.2, the most concave situation is grown at epitaxial wafer, can be by the Al component of on-line tuning wherein AlGaN layer or thickness so that the STRESS VARIATION of epitaxial wafer is that warpage is more likely to convex.Improve the state that epitaxial wafer growth is the most recessed.GaN layer is set and is sandwiched in the middle of GaInN and AlGaN the effect played progressive buffering, regulate stress.Adjusted by the thickness of GaN layer and also can suitably regulate epitaxial wafer warped state.
Accompanying drawing explanation
Fig. 1 is the structural representation of prior art；
Fig. 2 a is that prior art grows involuntary doped layer and warpage schematic diagram one during active layer；
Fig. 2 b is that prior art grows involuntary doped layer and warpage schematic diagram two during active layer；
Fig. 2 c is that prior art grows involuntary doped layer and warpage schematic diagram three during active layer；
Fig. 3 is the structural representation of the present invention.
Label declaration
Substrate 10 cushion 20
Involuntary doped layer 30 first type conductive layer 40
Active layer 50 Second-Type conductive layer 60
Ohmic contact layer 70
Substrate 1 cushion 2
Involuntary doped layer 3 is combined regulating course 4
GaInN layer 41 GaN layer 42
AlGaN layer 43 first type conductive layer 5
Active layer 6 electronic barrier layer 7
Second-Type conductive layer 8 ohmic contact layer 9.
Detailed description of the invention
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Refering to shown in Fig. 3, a kind of light emitting diode epitaxial structure with growth course scalable warpage that the present invention discloses, grown buffer layer 2 on substrate 1, involuntary doped layer 3 is grown on cushion 2, growing mixed regulating course 4 on involuntary doped layer 3, compound regulating course 4 grows the first type conductive layer 5, active layer 6 is grown on first type conductive layer 5, grow electronic barrier layer 7 on active layer 6, electronic barrier layer 7 grows Second-Type conductive layer 8, Second-Type conductive layer 8 grows ohmic contact layer 9.Substrate 1 is preferably large-size sapphire substrate.
Compound regulating course 4 is the one in GaInN/GaN/AlGaN, AlGaN/GaN/GaInN.In the present embodiment, compound regulating course 4 uses the GaInN layer 41 grown successively, GaN layer 42 and AlGaN layer 43, and wherein GaInN layer 41 is grown on involuntary doped layer 3, GaN layer 42 is grown between GaInN layer 41 and AlGaN layer 43, and the first type conductive layer 5 is grown in AlGaN layer 43.
The thickness 200nm of compound regulating course 4.The thickness thickness partially of compound regulating course 4 can cause subsequent growth the first type conductive layer 5(nGaN) stress excessive, cause poor crystal quality, dislocation density to increase on the contrary.
When compound regulating course 4 is configured to GaInN/GaN/AlGaN epitaxial structure, thickness 0 < d3 < 150nm of the thickness 0 < d2 < 30nm, AlGaN of the thickness 0 < d1 < 150nm, GaN of GaInN.
The present invention also discloses a kind of LED epitaxial growing method with growth course scalable warpage, comprises the following steps:
One, use MOCVD at 530-570 DEG C, 500-600 Torr, growth rate is less than 2um/h, and rotating speed is less than superficial growth cushion 2 on substrate 1 under the epitaxial conditions of 500r/h.
Two, epitaxial growth temperature is to being increased to more than 1000 DEG C, and 100-500 Torr, growth rate is higher than 3 um/h, the rotating speed involuntary doped layer of conditioned growth 3 higher than 700r/h.
Three, each Rotating fields of growing mixed regulating course 4 on involuntary doped layer 3, compound regulating course 4 is the one in GaInN/GaN/AlGaN, AlGaN/GaN/GaInN: 1, in epitaxial wafer growth course, involuntary doped layer 3(uGaN) warp value higher than-60 for growth MQW time the most convex, improved by In component in GaInN layer or thickness increases, and reducing the Al component of AlGaN layer and thickness thinning thereof, the stress of epitaxial wafer can become being more likely to concavity warpage, tends to smooth during growth MQW；2, in epitaxial wafer growth course, involuntary doped layer 3(uGaN) warp value less than-110 for growth MQW time inclined concavity, improved by Al component in AlGaN layer or thickness increases, and reduce the raising of In component and thickness thinning in GaInN layer, the stress of epitaxial wafer can become being more likely to convex warpage, tends to smooth during growth MQW；3, in epitaxial wafer growth course, involuntary doped layer 3(uGaN) warp value when occuping-110 to-60 for growth MQW time tend to smooth, in GaInN, AlGaN layer, In, Al component reduces and thickness thinning.
Four, compound regulating course 4 grows the first type conductive layer 5.
Five, epitaxial growth temperature is reduced to less than 800 DEG C, and pressure is less than 300 Torrs, and the rotating speed condition higher than 800r/h grows active layer 6 on the first type conductive layer 5.
Six, epitaxial growth temperature is elevated above 900 DEG C and grows electronic barrier layer 7 at active layer 6, grow Second-Type conductive layer 8 on electronic barrier layer 7, and Second-Type conductive layer 8 grows ohmic contact layer 9.
Wherein, the variation tendency of compound regulating course 4 epitaxial growth temperature: growth AlGaN material temperature is less than 1000 DEG C；Growth GaN material temperature is higher than 1000 DEG C；Growth GaInN material temperature is less than 1000 DEG C.The variation tendency of compound regulating course 4 epitaxial growth pressure: growth AlGaN material pressure is less than 150 Torrs；Growth GaN material pressure range 150-300 Torr；Growth GaInN material pressure is less than 150 Torrs.The variation tendency of compound regulating course 4 epitaxial growth deep bid rotating speed: growth AlGaN material rotating speed is less than 800r/h；Growth GaN material rotating speed is higher than 800r/h；Growth GaInN material rotating speed is less than 800r/h.The variation tendency of compound regulating course 4 epitaxial growth rate: growth AlGaN material growth rate is less than 2um/h；Growth GaN material growth rate is higher than 4um/h；Growth GaInN Material growth speed is less than 1um/h.
The foregoing is only the preferred embodiments of the present invention, not the restriction to this case design, all equivalent variations done according to the design key of this case, each fall within the protection domain of this case.
Claims (4)
1. a light emitting diode epitaxial structure with growth course scalable warpage, it is characterized in that: Grown cushion, involuntary doped layer is grown on cushion, growing mixed regulating course on involuntary doped layer, grow the first type conductive layer on compound regulating course, the first type conductive layer grows active layer, active layer grows electronic barrier layer, grow Second-Type conductive layer on electronic barrier layer, Second-Type conductive layer grows ohmic contact layer；Compound regulating course is the one in GaInN/GaN/AlGaN, AlGaN/GaN/GaInN.
A kind of light emitting diode epitaxial structure with growth course scalable warpage, it is characterised in that: substrate is large-size sapphire substrate.
A kind of light emitting diode epitaxial structure with growth course scalable warpage, it is characterised in that: the thickness 200nm of compound regulating course.
A kind of light emitting diode epitaxial structure with growth course scalable warpage, it is characterized in that: when compound regulating course is configured to GaInN/GaN/AlGaN epitaxial structure, thickness 0 < d1 < 150nm of GaInN, thickness 0 < d3 < 150nm of the thickness 0 < d2 < 30nm, AlGaN of GaN.
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| CN108550668A (en) * | 2018-02-28 | 2018-09-18 | 华灿光电(苏州）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
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