CN106025009A - 一种发光二极管及其制备方法 - Google Patents

一种发光二极管及其制备方法 Download PDF

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CN106025009A
CN106025009A CN201610565314.5A CN201610565314A CN106025009A CN 106025009 A CN106025009 A CN 106025009A CN 201610565314 A CN201610565314 A CN 201610565314A CN 106025009 A CN106025009 A CN 106025009A
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程志青
林兓兓
张家宏
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Anhui Sanan Optoelectronics Co Ltd
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Abstract

本发明属于半导体技术领域，涉及一种发光二极管及其制备方法，利用低生长速率、高Mg/Ga摩尔比及高Mg掺杂，使得P型层在厚度小或者等于于250Å时，仍然能填平电子阻挡层上表面的V型缺陷，减小P型层对光的吸收，同时，减小器件因表面V型缺陷密度较大而产生的漏电情况，提升其抗静电能力。

Description

一种发光二极管及其制备方法
技术领域
本发明涉及半导体制造技术领域，尤其是涉及一种发光二极管及其制备方法。
背景技术
GaN基材料，包括InGaN、GaN、AlGaN合金，为直接带隙半导体，且带隙从1.8~6.2eV连续可调，具有宽直接带隙、强化学键、耐高温、抗腐蚀等优良性能，是生产短波长高亮度发光器件的理想材料，广泛应用于全彩大屏幕显示，LCD背光源、信号灯、照明等领域。提高GaN基LED发光效率的途径有以下两个；一、提高内量子效率；二、提高外量子效率。目前，制约着内量子效率提升的一个重要因素是P层注入有源区空穴浓度问题。因为P层中的空穴浓度受Mg在GaN中的掺杂效率和电离效率的影响，P层Mg的掺杂浓度及空穴浓度难以实现较高的活化水平，导致注入有源区的空穴量较少，并且分布不均匀，主要集中分布在最后3~5个量子阱中，造成内量子效率低。
同时，较厚的P层对量子阱层发出的光也具有较强的吸收作用。而现有技术中，如果单独通过减薄P层厚度提高外量子效率，则外延层表面V型缺陷密度势必会很大，导致器件的漏电严重、抗静电能力变差。
发明内容
针对现有技术的缺陷，本发明提供一种发光二极管的制备方法，至少包括如下步骤：
提供一衬底；
于所述衬底上生长N型层；
于所述N型层上生长有源层、及电子阻挡层，所述电子阻挡层上表面V型缺陷宽度大于或者等于50nm，V型缺陷密度大于或者等于1×108 cm-2；
于所述电子阻挡层上继续生长P型层，所述P型层为Mg掺杂GaN材料层；
其特征在于：调节Mg/Ga摩尔比大于或者等于0.005，生长速率小于或者等于50Å/min，制备厚度小于或者等于250Å、及表面V型缺陷密度小于或者等于5×106 cm-2的P型层。
优选的，当所述P型层厚度小于或者等于250Å时，其表面V型缺陷密度随着Mg/Ga摩尔比的增大而减小，随着其生长速率的降低而减小。
优选的，所述电子阻挡包括依次生长的非故意掺杂AlGaN层、P型AlGaN层和P-AlGaN/GaN超晶格结构层。优选的，所述电子阻挡层之前还包括生长一低温P型GaN层的步骤。
优选的，所述P型AlGaN层中P型杂质浓度大于所述P-AlGaN/GaN超晶格结构层的P型杂质浓度。
优选的，所述非故意掺杂AlGaN层的厚度为50~200Å，所述P型AlGaN层的厚度为100~400Å，所述P-AlGaN/GaN超晶格结构层的厚度为250~750Å。
优选的，所述P型层中杂质Mg的浓度为2×1019~2×1020cm-3。
本发明同时提供的一种发光二极管，至少包括：一衬底，及依次位于所述衬底上的N型层、有源层、电子阻挡层和P型层，所述P型层为Mg掺杂GaN层；所述电子阻挡层上表面V型缺陷开口宽度大于或者等于50nm，V型缺陷密度大于或者等于1×108 cm-2，其特征在于：所述P型层的厚度小于或者等于250Å，该P型层上表面V型缺陷密度小于或者等于5×106 cm-2。
优选的，所述电子阻挡层由非故意掺杂AlGaN层、P型AlGaN层和P-AlGaN/GaN超晶格结构层组成。
优选的，所述有源层与所述电子阻挡层之间还包括一低温P型GaN层。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1 为本发明实施例1之一种发光二极管的制备方法流程图。
图2 为本发明实施例1之一种发光二极管SEM图。
图3 为本发明实施例1之一种发光二极管最优实施例的AFM图。
图4 为本发明最优实施例之对比实施方式之发光二极管的AFM图。
图5 为本发明实施例1之一种发光二极管结构示意图。
图6 为本发明实施例2之一种发光二极管的制备方法流程图。
图7 为本发明实施例2之一种发光二极管结构示意图。
附图标注：100：衬底；200：N型层；300：有源层；400：低温P型GaN层；500：电子阻挡层；510：非故意掺杂AlGaN层；520：P型AlGaN层；530：P-AlGaN/GaN超晶格结构层；600：P型层。
具体实施方式
下面结合附图和实施例对本发明的具体实施方式进行详细说明。
实施例 1
参看附图1~2，本发明提供一种发光二极管的制备方法，至少包括如下步骤：
首先提供一衬底100；
然后于衬底100上生长N型层200；
于N型层200上生长有源层300及电子阻挡层500，此时，经测试分析显示，电子阻挡层500表面具有较多的V型缺陷，其中，V型缺陷的宽度大于或者等于50nm，同时，V型缺陷的密度大于或者等于1×108 cm-2，目前越来越多理论研究和实验结果证实V型缺陷是GaN基LED内部非常重要的空穴注入通道，极大地提高了空穴注入效率。但是如果LED表面缺陷密度过大，则漏电通道增加，从而影响器件的抗静电能力。
继续在上述电子阻挡层500上生长P型层600，优选的P型层600材料为Mg掺杂GaN材料层，Mg杂质浓度为2×1019~2×1020cm-3，具体地，调节Mg/Ga摩尔比大于或者等于0.005，生长速率小于或者等于50Å/min，制备厚度小于或者等于250Å及表面V型缺陷密度小于或者等于5×106 cm-2的P型层600，优选的，Mg/Ga摩尔比为0.005~0.02，生长速率小于或者等于20Å/min，P型层600表面V型缺陷密度小于或者等于2.5×106cm-2。
当所述P型层600厚度小于或者等于250Å时，其表面V型缺陷密度随着Mg/Ga摩尔的增大而减小，随着其生长速率的降低而减小，因此，本发明通过低速生长高Mg掺杂的P型层600，增加外延生长时横向成长速率与纵向成长速率的比率，使得外延以横向生长为主，进而达到在P型层600厚度较小时，仍然能填平V型缺陷；同时，控制Mg/Ga摩尔比大于或者等于0.005，因为Mg/Ga摩尔比较高时，容易侧向生长形成MgN，抑制V型缺陷的扩大并加速V型缺陷的填平，继而得到上表面V型缺陷密度小于或者等于5×106cm-2的P型层600，在增加器件发光效率的同时，减小器件的漏电，提升其抗静电能力。
更进一步地，如附图3所示，本实施例优选的P型层600生长速率为15Å/min，Mg/Ga摩尔比为0.005，当其厚度为100Å，仍能得到较为平整的表面，具体地，P型层600表面V型缺陷密度约1.8×106cm-2。
本发明还提供一对比试验，所述对比试验与本发明的优选实施方式的区别仅在于P型层600的生长条件不同，具体的，对比试验中P型层600的生长速率为15Å/min，厚度为100Å，其Mg/Ga摩尔比则为0.0035，由附图4的AFM图片可以看出，其表面存在较多的凹坑，其原因是当Mg/Ga摩尔比较小时，及时采用较低的生长速率，P型层600厚度为100Å时仍然未能完全填平电子阻挡层500处的V型缺陷。
参看附图5，本发明还提供一种发光二极管，至少包括：一衬底100，及依次位于所述衬底100上的N型层200、有源层300、电子阻挡层500和P型层600，所述P型层600为Mg掺杂GaN层，其中，电子阻挡层500上表面V型缺陷开口宽度大于或者等于50nm，V型缺陷密度大于或者等于1×108 cm-2，P型层600的厚度小于或者等于250Å，该P型层600上表面V型缺陷密度小于或者等于5×106 cm-2。
实施例 2
参看附图6~7，本实施例与实施例1的区别在于，为了更好的提升发光二极管的性能，本实施例还包括先于有源层300上生长一低温P型GaN层400的步骤，然后于低温P型GaN层400上生长电子阻挡层500。其中，电子阻挡层500包括依次生长的非故意掺杂AlGaN层510、P型AlGaN层520和P-AlGaN/GaN超晶格结构层530。而低温P型GaN层400位于有源层300与电子阻挡层500之间，用于保护有源层300的晶体质量，有利于空穴向有源层300的注入，获得高发光强度的GaN系发光二极管。
其中，非故意掺杂AlGaN层510是为了阻挡P型杂质扩展到有源层300影响发光效率，故采用非故意掺杂形式；P型AlGaN层520中P型掺杂浓度大于P-AlGaN/GaN超晶格结构层530中P型掺杂浓度，增加空穴浓度及电洞注入效率。同时P-AlGaN/GaN超晶格结构层530中Al组份为2~20%，非故意掺杂AlGaN层510为2~15%，P型AlGaN层520中Al组分为2~15%，非故意掺杂AlGaN层510与P型AlGaN层520与中Al组份低，相对高Al组分含量的P-AlGaN/GaN超晶格结构层530，空穴浓度与空穴迁移率较高，提高外延结构的内量子效率。
综上所述，本发明通过减薄P型层600厚度，优化P型层600生长条件，利用低生长速率、高Mg/Ga摩尔比及高Mg掺杂，使得P型层600在较小厚度（厚度小于或者等于250Å）时，仍然能填平电子阻挡层500上表面的V型缺陷，减小P型层600对光的吸收，同时，减小器件因表面V型缺陷密度较大而产生的漏电情况，提升其抗静电能力。
需要说明的是，以上实施方式仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施方式对本发明进行详细的说明，本领域的普通技术人员应当理解；其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换，而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施方案的范围。

Claims (10)

1.一种发光二极管的制备方法，至少包括如下步骤：
提供一衬底；
于所述衬底上生长N型层；
于所述N型层上生长有源层及电子阻挡层，所述电子阻挡层上表面V型缺陷宽度大于或者等于50nm，V型缺陷密度大于或者等于1×108cm-2；
于所述电子阻挡层上继续生长P型层，所述P型层为Mg掺杂GaN材料层；
其特征在于：调节所述P型层中Mg/Ga摩尔比大于或者等于0.005，生长速率小于或者等于50Å/min，制备厚度小于或者等于250Å、及表面V型缺陷密度小于或者等于5×106 cm-2的P型层。
2.根据权利要求1所述的一种发光二极管的制备方法，其特征在于：当所述P型层厚度小于或者等于250Å时，P型层表面V型缺陷密度随着Mg/Ga摩尔比的增大而减小，随着P型层生长速率的降低而减小。
3.根据权利要求1所述的一种发光二极管的制备方法，其特征在于：所述电子阻挡层包括依次生长的非故意掺杂AlGaN层、P型AlGaN层和P-AlGaN/GaN超晶格结构层。
4.根据权利要求3所述的一种发光二极管的制备方法，其特征在于：所述P型AlGaN层中P型杂质浓度大于所述P-AlGaN/GaN超晶格结构层的P型杂质浓度。
5.根据权利要求3所述的一种发光二极管的制备方法，其特征在于：所述非故意掺杂AlGaN层的厚度为50~~200Å，所述P型AlGaN层的厚度为100~400Å，所述P-AlGaN/GaN超晶格结构层的厚度为250~750Å。
6.根据权利要求1所述的一种发光二极管的制备方法，其特征在于：所述电子阻挡层之前还包括生长一低温P型GaN层的步骤。
7.根据权利要求1所述的一种发光二极管的制备方法，其特征在于：所述P型层中杂质Mg的浓度为2×1019~2×1020cm-3。
8.一种发光二极管，至少包括：一衬底，及依次位于所述衬底上的N型层、有源层、电子阻挡层和P型层，所述P型层为Mg掺杂GaN材料层；所述电子阻挡层上表面V型缺陷开口宽度大于或者等于50nm，V型缺陷密度大于或者等于1×108 cm-2，其特征在于：所述P型层的厚度小于或者等于250Å，该P型层上表面V型缺陷密度小于或者等于5×106 cm-2。
9.根据权利要求8所述的一种发光二极管，其特征在于：所述电子阻挡层由非故意掺杂AlGaN层、P型AlGaN层和P-AlGaN/GaN超晶格结构层组成。
10.根据权利要求8所述的一种发光二极管，其特征在于：所述有源层与所述电子阻挡层之间还包括一低温P型GaN层。
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