CN106024978A - 一种抗紫外线功能的金属合金夹层结构透明导电薄膜 - Google Patents
一种抗紫外线功能的金属合金夹层结构透明导电薄膜 Download PDFInfo
- Publication number
- CN106024978A CN106024978A CN201610426252.XA CN201610426252A CN106024978A CN 106024978 A CN106024978 A CN 106024978A CN 201610426252 A CN201610426252 A CN 201610426252A CN 106024978 A CN106024978 A CN 106024978A
- Authority
- CN
- China
- Prior art keywords
- metal alloy
- metal
- thin film
- transparent conductive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001092 metal group alloy Inorganic materials 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 49
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 229910052737 gold Inorganic materials 0.000 claims abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 229910052976 metal sulfide Inorganic materials 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 80
- 239000010410 layer Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 150000003346 selenoethers Chemical class 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- -1 oxide Chemical compound 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000032683 aging Effects 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical group [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 238000002207 thermal evaporation Methods 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000002265 prevention Effects 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 239000002344 surface layer Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000027756 respiratory electron transport chain Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000004224 protection Effects 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007539 photo-oxidation reaction Methods 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- WXXSNCNJFUAIDG-UHFFFAOYSA-N riociguat Chemical compound N1=C(N)C(N(C)C(=O)OC)=C(N)N=C1C(C1=CC=CN=C11)=NN1CC1=CC=CC=C1F WXXSNCNJFUAIDG-UHFFFAOYSA-N 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 150000003343 selenium compounds Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Insulated Conductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种具有抗紫外线功能的金属合金夹层结构透明导电薄膜,所述金属合金夹层结构透明导电薄膜由金属氧化物或/和金属硫化物夹金属合金薄膜形成三层或更多层薄膜结构,金属合金薄膜采用Ag、Cu和Au合金材料。制得的金属合金夹层结构透明导电薄膜,除用于薄膜太阳能电池外,还可用于显示、光电器件、抗电磁波和其他需防紫外光的应用领域。采用本发明的透明导电薄膜用于薄膜太阳能电池如有机太阳能电池和钙钛矿太阳能电池的电极,器件的耐紫外线效果明显提高。本发明制作工艺可采用真空镀膜技术如磁控溅射、热蒸镀、电子束、离子束等方法沉积,沉积过程中无需衬底温度,有利于在柔性衬底上制备,节约电池和器件成本。
Description
技术领域
本发明属于光电薄膜与器件领域,具体涉及一种可提高薄膜太阳能电池抗紫外功能的金属合金夹层结构透明导电薄膜,该薄膜可用薄膜太阳能电池电极,增强电池的抗紫外能力,还可用于显示、光电器件、抗电磁波以及需防紫外的其他领域。
背景技术
以氧化铟锡(ITO)、掺氟氧化锡(FTO)为代表的透明电极通常具有高电导率和高反射率等共同光电特性,已被广泛地应用于太阳能电池、平面显示、电子电路、光学反射镜及其它光电器件领域。ITO因其透射率高和优良的导电性已广泛用于太阳能电池和显示领域,如有机太阳能电池、有机发光显示和钙钛矿电池等领域,相比于FTO电极,ITO显示出更好透光性、低雾度和低电阻等优点,ITO相比FTO耐热性差,在高于200度退火条件下ITO方阻将出现退化,而高于300度温度工艺条件下,电阻将急剧上升,无法忍受高温退火工艺。FTO薄膜虽然能耐500度以上高温,但存在薄膜雾度高,电阻率较高等弱点。ITO薄膜需要铟材料,地球含量低,无法满足未来显示和电池等领域大量使用,近年价格已大幅度上涨,极大提高器件成本。另外,ITO和FTO导电薄膜还存在易脆、紫外光区域透射率高的缺点,无法直接用于对紫外线敏感的领域,在柔性衬底上多次弯曲,容易使电极出现裂痕而导致器件快速衰退。金属夹层结构导电薄膜具有高透光率、耐弯曲和低电阻等优点,不过采用单纯Ag、金和铜等金属夹层薄膜,由于Ag、金和铜原子容易扩散,存在导电薄膜的稳定性不好的缺点。
发明内容
本发明的目的是针对现有技术的不足而提出的一种可提高薄膜太阳能电池抗紫外线功能的金属合金夹层结构透明导电薄膜。采用金属合金薄膜作为中间层,底、面两层采用金属氧化物或金属半导体硫化物、硒化物薄膜层,形成金属合金夹层结构透明导电薄膜。金属合金夹层结构导电薄膜在紫外波段特别是小于350nm波长范围内,透光率低于30%,明显低于ITO和FTO导电薄膜,具有很好阻挡紫外光作用,减少高能紫外光对薄膜太阳能电池如有机太阳能电池、钙钛矿太阳能电池中有机复合材料的光氧化和光降解,明显提高薄膜太阳能电池耐紫外线老化的能力。采用金属合金薄膜作为夹层结构导电薄膜的中间层,相比纯金属薄膜为中间层,能抑制单纯金属原子凝聚、扩散和氧化等作用,金属薄膜结构稳定性更好,金属合金夹层结构导电薄膜的稳定性更佳。金属合金夹层结构透明导电薄膜具有高透光率、低方块电阻和低雾度等特点,可用于显示和光电器件等领域。其高导电和透光性的特点还可用于透明且需要抗电磁波辐射等领域。利用其防紫外、高透明性和导电性等特点,还可用于汽车玻璃、智能窗口等,又因耐弯曲特性可用于柔性导电薄膜以及柔性器件的制备和应用。
本发明的目的是这样实现的:
一种具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特点是;该导电薄膜由金属氧化物或/和金属硫化物或/和金属硒化物夹金属合金薄膜形成三层或数层结构的透明薄膜或者半透明薄膜,在小于350nm紫外波段,其透光率低于30%;其中,底、面两层薄膜由金属氧化物或金属硫化物沉积而成,夹层薄膜为金属合金薄膜; 所述金属合金为银合金、铜合金或金合金。
所述金属合金中的银、铜、金含量范围为60% 至99.9%,掺杂元素含量0.1% 至40%;合金元素为二元、三元或多元。
所述银合金掺杂元素有铝、镁、钛、铜、鎳、铋、铬、金、锡、锌或铌;金合金掺杂元素有铌、银、铬、铝、镁、钛、铜、鎳、铋、锌或锡;铜合金掺杂元素有银、金、铝、铬、锌、镁、钛、鎳、铋、锡、或铌。
所述金属氧化物为氧化锌、氧化镍、氧化钼、氧化物、氧化钛、氧化铟、氧化锡以及它们的掺杂型氧化物;典型金属硫化物和金属硒化物如ZnS、ZnSe、CdS、CdSe、PbS以及它们的掺杂型硫化物(硒化物)等。
本发明的金属合金夹层结构透明导电薄膜,可根据工艺和材料特性,可采用热蒸镀、磁控溅射、电子束、离子束等方法制备,金属合金薄膜层各材料含量控制可采用合金颗粒热蒸镀,或采用合金靶材溅射获得,也可采用共蒸镀或共溅射等方法获得。底、面两层金属氧化物、硫化物和硒化物等可采用热蒸发、磁控溅射、电子束、激光脉冲、化学气相沉积等方式制备,也可采用溶胶凝胶法制备相应氧化物、硫化物或硒化物纳米溶液,通过旋涂、喷涂、印刷、刮涂等方式获得底、面层。
本发明的金属合金夹层薄膜,其金属合金主体元素如银、铜、金等含量大60%,掺杂元素含量小于40%,甚至微量。优选地,银金属含量可从60%至99.9%变化,掺杂元素可采用一种或多种,掺杂元素含量可从微量到40%变化。金属合金薄膜厚度为5-30 nm,优选的,金属合金层厚度为7-20nm。
本发明的金属合金夹层结构透明导电薄膜,包括底、面层金属氧化物、硫化物和硒化物。优选的,金属氧化物可采用典型ZnO、SnO2、TiO2、In2O3等体系或者它们的掺杂体系。底、面两层薄膜典型厚度为10-100nm,优化的底、面薄膜厚度为20nm-70nm。为进一步提高透明导电薄膜稳定性,包括热稳定性,三层结构的透明导电薄膜,还可进一步扩展到四层、五层等。增加的薄膜层通常位于底层与金属合金层之间,或者面层与金属合金层之间,形成四层、或五层结构的金属合金夹层结构透明导电薄膜。增加的薄膜层材料可采用氟化物如LiF、(掺杂)金属氧化物如ZnO、GZO、氧化铟、ITO等、金属层如Al、Ti、Cr和Ni等。
本发明的金属合金夹层结构导电薄膜的导电性和透明性等可通过底、面层薄膜材料和厚度、以及金属合金层的材料、组分和厚度等参数加以调节和优化。本发明还可以通过选择底、面层材料、厚度对其他波段的透明性进行调节。
本发明的金属合金夹层结构透明导电薄膜作为薄膜太阳能电池如用于钙钛矿太阳能电池或有机太阳能电池,电池耐紫外能力相比ITO电极,抗老化性能明显增加。
本发明提出的一种具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其底层和面层薄膜可采用金属氧化物、金属硫化物和金属硒化物等,金属夹层结构可采用金合金、银合金和铜合金。本发明有益效果包括,采用金属合金夹层结构导电薄膜替代ITO和FTO导电薄膜,该夹层结构导电薄膜在紫外波段,特别是小于350nm波段,具有很好抑制透射功能,提高器件的耐紫外线辐射功能。金属合金夹层结构导电薄膜具有很好柔韧性,适合在柔性衬底上制备,相比ITO和FTO薄膜,更容易获得方块电阻更低的透明导电薄膜。采用金属合金薄膜作为夹层结构中间层,相比纯金属薄膜,能更好的抑制金属原子凝聚和扩散,该夹层结构导电薄膜具有更好稳定性。金属合金夹层结构导电薄膜可用于薄膜太阳能电池电极如钙钛矿太阳能电池或者有机太阳能电池,其电池效率与ITO电极电池相当,但电池在紫外线照射加速老化过程中,器件抗紫外功能明显增加,克服了传统ITO和FTO导电薄膜的不足。采用金属合金薄膜作为金属夹层结构的导电薄膜,具有提高器件抗紫外功能,增强夹层结构导电薄膜的稳定性、降低方阻和提高可见光区透射率等功能。以上述构思获得的合金电极结构,均应属于本发明保护范围。
附图说明
图1为本发明实施例1的金属合金夹层结构透明导电薄膜截面示意图;
图2为本发明实施例2的五层结构金属合金夹层结构透明导电薄膜截面示意图;
图3为本发明实施例3的金属合金夹层结构透明导电薄膜用于有机太阳能电池作为阳极的截面示意图;
图4为本发明实施例4的金属合金夹层结构透明导电薄膜用于有机太阳能电池作为阴极的截面示意图;
图5为本发明实施例5的金属合金夹层结构透明导电薄膜用于钙钛矿太阳能电池阳极的截面示意图。
具体实施方式
结合以下具体实施例和附图,对本发明作进一步的详细说明,本发明的保护内容不局限于以下实施例。在不背离发明构思的精神和范围下,本领域技术人员能够想到的变化和优点都被包括在本发明中,并且以所附的权利要求书为保护范围。实施本发明的过程、条件、试剂、实验方法等,除以下专门提及的内容之外,均为本领域的普遍知识和公知常识,本发明没有特别限制。
实施例1
参阅图1,本实施例为三层结构金属合金夹层结构透明导电薄膜,从下至上依次包括玻璃层1、底层薄膜20、金属合金夹层结构薄膜3、面层薄膜40。本实施例中给出单一具体材料,并不限定其它材料选择,只是举例说明本发明。玻璃1经洗洁精、去离子水、异丙醇和丙酮超声清洗,烘干后,接着采用磁控溅射方法分别沉积40nm GZO薄膜20, 11nm厚度的银钛合金夹层结构薄膜3,40nm GZO薄膜40,获得方块电阻约为6Ω/□,可见光区最高透过率大于85%的夹层结构透明导电薄膜。300度退火后30分钟,金属合金夹层结构透明导电薄膜的方块电阻从6Ω/□下降到5Ω/□。不过,300度退火30分钟的ITO薄膜,其方块电阻从10Ω/□上升到20Ω/□。
实施例2
参阅图2,本实施例为五层结构金属合金夹层结构透明导电薄膜,从下至上依次包括玻璃层1、底层薄膜20、底层修饰层22、金属合金夹层结构薄膜3、面层修饰层42、面层薄膜40。本实施例中给出单一具体材料,并不限定其它材料选择,只是举例说明本发明。玻璃1经洗洁精、去离子水、异丙醇和丙酮超声清洗,烘干后,逐步磁控溅射的40nm AZO薄膜20, 1nmAl薄膜22、11nm银钛合金夹层结构薄膜3、1nm铝薄膜42和40nm AZO薄膜40,方块电阻约为6Ω/□,可见光区最高透过率大于85%的夹层结构透明导电薄膜。300度退火后30分钟,五层结构金属合金夹层结构透明导电薄膜的方块电阻从6.2Ω/□下降到5.3Ω/□。
实施例3
参阅图3,本实施例为有机太阳能电池结构,从下至上依次包括金属合金夹层结构透明导电薄膜11、空穴传输层50、有机光吸收层60、电子传输层70和银铝合金电极8(阴极)。本实施例中给出单一具体材料,并不限定其它材料选择,只是举例说明本发明。导电夹层薄膜11经洗洁精、水、异丙醇和丙酮超声清洗,烘干后,旋涂上40nm的PEDOT:PSS空穴传输层(也可称空穴缓冲层)50,140度退火后,接着旋涂上80nm PTB7-TH:PC70BM(比例1:1.5)混合的光活性层60,接着旋涂30nm的ZnO电子传输层70,然后真空热蒸镀方式镀上100nm的银铝电极8。采用此结构的有机太阳能电池效率可以达到8%以上。经过500瓦的紫外光照射15分钟,电池效率从原来9.1%下降到4.0%,而在ITO上相同结构的电池效率从9.5%衰减到1.0%。
实施例4
参阅图4,本实施例为有机太阳能电池结构,从下至上依次包括金属合金夹层结构透明导电薄膜11、电子传输层70、有机光吸收层60、空穴传输层50和银铝电极82(阳极)。本实施例中给出单一具体材料,并不限定其它材料选择,只是举例说明本发明。金属合金夹层结构透明导电薄膜11经洗洁精、水、异丙醇和丙酮超声清洗,烘干后,旋涂上30nm的ZnO电子传输层70,140度退火后,接着旋涂上80nm 厚度的PTB7-TH:PC70BM(比例1:1.5)混合的有机光活性层60,接着真空热蒸镀10nm厚度的MoO3空穴传输层50和100nm的银铝电极82。采用此结构的有机太阳能电池效率可以达到8%以上。经过500瓦的紫外光照射20分钟,电池效率从原来8.6%下降到6.6%,而在ITO上相同结构的电池效率从9.2%衰减到0.5%。这表明采用该金属合金夹层结构导电薄膜相比ITO电极具有更优异的抗紫外线能力。
实施例5
参阅图5,本实施例为钙钛矿电池结构,从下至上依次包括金属合金夹层结构透明导电薄膜11、空穴传输层50、钙钛矿光活性层66、电子传输层70和银铝合金电极8(阴极)。本实施例中给出单一具体材料,并不限定其它材料选择,只是举例说明本发明。金属合金夹层结构透明导电薄膜11经洗洁精、去离子水、异丙醇和丙酮超声清洗,烘干后,旋涂上40nm厚度的PEDOT:PSS空穴传输层,140度退火后,接着旋涂上300nm厚度的CH3NH3PbI3钙钛矿光活性层66,接着旋涂40nm厚度的PCBM电子传输层70,最后以真空热蒸镀方式镀上100nm的银铝合金电极8。采用此结构的钙钛矿电池效率可以10%以上。经过500瓦的紫外光照射20分钟,电池效率从原来11.2%下降到5.2%,而在ITO上相同结构的电池效率从12.0%衰减到0%。
以上所述的仅是本发明的优选实施方式,应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。
Claims (6)
1.一种具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特征在于,该导电薄膜由金属氧化物或/和金属硫化物或/和金属硒化物薄膜夹金属合金薄膜形成三层或数层结构的透明薄膜或者半透明薄膜,在小于350nm紫外波段,其透光率低于30%;其中,底、面两层薄膜由金属氧化物或金属硫化物沉积而成,厚度为10-100nm;夹层薄膜为金属合金薄膜,厚度为7-20nm;所述金属合金为银合金、铜合金或金合金;所述金属氧化物为氧化锌、氧化镍、氧化钼、氧化物、氧化钛、氧化铟、氧化锡或它们的掺杂型氧化物;所述金属硫化物为ZnS、CdS、PbS或它们的掺杂型硫化物;所述金属硒化物为ZnSe、CdSe或它们的掺杂型硒化物。
2.如权利要求1所述的具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特征在于,所述金属合金中的银、铜、金含量为60% ~99.9%,掺杂元素含量为0.1% ~40%;合金元素为二元、三元或多元元素。
3.如权利要求1或2所述的具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特征在于,所述银合金掺杂元素有铝、镁、钛、铜、鎳、铋、铬、金、锡、锌或铌;金合金掺杂元素有铌、银、铬、铝、镁、钛、铜、鎳、铋、锌或锡;铜合金掺杂元素有银、金、铝、铬、锌、镁、钛、鎳、铋、锡、或铌。
4.如权利要求1或2所述的具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特征在于,该导电薄膜的耐温性在300~400℃。
5.如权利要求1或2所述的具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特征在于,该导电薄膜用于薄膜太阳能电池的阴极或阳极,能够提高器件耐紫外老化寿命。
6.如权利要求1或2所述的具有抗紫外线功能的金属合金夹层结构透明导电薄膜,其特征在于,该导电薄膜在显示、光电器件、抗电磁波的应用。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610426252.XA CN106024978A (zh) | 2016-06-16 | 2016-06-16 | 一种抗紫外线功能的金属合金夹层结构透明导电薄膜 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610426252.XA CN106024978A (zh) | 2016-06-16 | 2016-06-16 | 一种抗紫外线功能的金属合金夹层结构透明导电薄膜 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN106024978A true CN106024978A (zh) | 2016-10-12 |
Family
ID=57089172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610426252.XA Pending CN106024978A (zh) | 2016-06-16 | 2016-06-16 | 一种抗紫外线功能的金属合金夹层结构透明导电薄膜 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106024978A (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106567039A (zh) * | 2016-10-17 | 2017-04-19 | 中国石油大学(华东) | 一种MoS2/Ag/MoS2半导体薄膜材料及其制备方法 |
CN106887521A (zh) * | 2017-04-05 | 2017-06-23 | 陈胜红 | 一种柔性半透明钙钛矿太阳能电池 |
CN107154461A (zh) * | 2017-05-23 | 2017-09-12 | 董春梅 | 基于紫外光屏蔽层的钙钛矿光伏电池 |
CN107357108A (zh) * | 2017-07-19 | 2017-11-17 | 无锡舒玛天科新能源技术有限公司 | 柔性可弯曲玻璃电致变色器及其制备方法 |
CN108074991A (zh) * | 2017-12-06 | 2018-05-25 | 中国航发北京航空材料研究院 | 一种复合透明导电膜 |
TWI630534B (zh) * | 2017-01-23 | 2018-07-21 | 日商凸版印刷股份有限公司 | Display device and display device substrate |
JP2018157147A (ja) * | 2017-03-21 | 2018-10-04 | 積水化学工業株式会社 | 固体接合型光電変換素子 |
CN109712744A (zh) * | 2019-01-25 | 2019-05-03 | 广东迪奥应用材料科技有限公司 | 一种透明导电膜 |
WO2019200650A1 (zh) * | 2018-04-20 | 2019-10-24 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管的封装结构及其制备方法 |
CN110634968A (zh) * | 2019-09-18 | 2019-12-31 | 浙江大学 | 基于无栅线、无掺杂接触的单晶硅异质结太阳能电池 |
US10826016B2 (en) | 2018-04-20 | 2020-11-03 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode package, display panel and method for manufacturing the same |
CN111933725A (zh) * | 2020-07-27 | 2020-11-13 | 华中科技大学 | 一种超薄宽谱透明电极及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2539375Y (zh) * | 2002-04-15 | 2003-03-05 | 湖南三才光电信息材料有限公司 | 一种高稳定的柔性透明导电复合膜 |
CN104979037A (zh) * | 2015-05-14 | 2015-10-14 | 上海电力学院 | 一种热稳定性增强的透明导电薄膜及其制备方法和应用 |
-
2016
- 2016-06-16 CN CN201610426252.XA patent/CN106024978A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2539375Y (zh) * | 2002-04-15 | 2003-03-05 | 湖南三才光电信息材料有限公司 | 一种高稳定的柔性透明导电复合膜 |
CN104979037A (zh) * | 2015-05-14 | 2015-10-14 | 上海电力学院 | 一种热稳定性增强的透明导电薄膜及其制备方法和应用 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106567039B (zh) * | 2016-10-17 | 2019-06-25 | 中国石油大学(华东) | 一种MoS2/Ag/MoS2半导体薄膜材料及其制备方法 |
CN106567039A (zh) * | 2016-10-17 | 2017-04-19 | 中国石油大学(华东) | 一种MoS2/Ag/MoS2半导体薄膜材料及其制备方法 |
TWI630534B (zh) * | 2017-01-23 | 2018-07-21 | 日商凸版印刷股份有限公司 | Display device and display device substrate |
JP2018157147A (ja) * | 2017-03-21 | 2018-10-04 | 積水化学工業株式会社 | 固体接合型光電変換素子 |
CN106887521A (zh) * | 2017-04-05 | 2017-06-23 | 陈胜红 | 一种柔性半透明钙钛矿太阳能电池 |
CN108847448A (zh) * | 2017-05-23 | 2018-11-20 | 吴彬 | 一种光伏电池及其制造方法 |
CN108807686A (zh) * | 2017-05-23 | 2018-11-13 | 吴彬 | 光伏电池及其制备方法 |
CN108807690A (zh) * | 2017-05-23 | 2018-11-13 | 吴彬 | 能量转换效率较高、寿命较长的光伏电池 |
CN108847448B (zh) * | 2017-05-23 | 2021-10-22 | 山西穿越光电科技有限责任公司 | 一种光伏电池及其制造方法 |
CN108807690B (zh) * | 2017-05-23 | 2021-12-07 | 吴彬 | 能量转换效率较高、寿命较长的光伏电池 |
CN107154461A (zh) * | 2017-05-23 | 2017-09-12 | 董春梅 | 基于紫外光屏蔽层的钙钛矿光伏电池 |
CN108807686B (zh) * | 2017-05-23 | 2021-11-09 | 广东威阳科技有限公司 | 光伏电池及其制备方法 |
CN107357108A (zh) * | 2017-07-19 | 2017-11-17 | 无锡舒玛天科新能源技术有限公司 | 柔性可弯曲玻璃电致变色器及其制备方法 |
CN108074991A (zh) * | 2017-12-06 | 2018-05-25 | 中国航发北京航空材料研究院 | 一种复合透明导电膜 |
US10826016B2 (en) | 2018-04-20 | 2020-11-03 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode package, display panel and method for manufacturing the same |
WO2019200650A1 (zh) * | 2018-04-20 | 2019-10-24 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管的封装结构及其制备方法 |
CN109712744A (zh) * | 2019-01-25 | 2019-05-03 | 广东迪奥应用材料科技有限公司 | 一种透明导电膜 |
CN110634968A (zh) * | 2019-09-18 | 2019-12-31 | 浙江大学 | 基于无栅线、无掺杂接触的单晶硅异质结太阳能电池 |
CN111933725A (zh) * | 2020-07-27 | 2020-11-13 | 华中科技大学 | 一种超薄宽谱透明电极及其制备方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106024978A (zh) | 一种抗紫外线功能的金属合金夹层结构透明导电薄膜 | |
CN104979037B (zh) | 一种热稳定性增强的透明导电薄膜及其制备方法和应用 | |
CN102779944B (zh) | 一种透明导电薄膜 | |
KR101680928B1 (ko) | 투명 전도성 산화물, 금속 및 산화물의 조합에 기초한 투명 전극 | |
CN104882495B (zh) | 一种用于太阳能电池的透明导电窗口层及cigs基薄膜太阳能电池 | |
CN102237152A (zh) | 透明导电薄膜及光电转换元件 | |
EP2747101A1 (en) | An opto-electronic device and method for manufacturing the same | |
Lee et al. | Approach to transparent photovoltaics based on wide band gap Sb2S3 absorber layers and optics-based device optimization | |
US11737292B2 (en) | Systems and methods for organic semiconductor devices with sputtered contact layers | |
CN104362186B (zh) | 一种应用于高效薄膜光电池的双层结构窗口层 | |
Chiang et al. | The utilization of IZO transparent conductive oxide for tandem and substrate type perovskite solar cells | |
CN104465804A (zh) | 一种可提高太阳能电池效率和稳定性的合金电极 | |
JP4540311B2 (ja) | 透明導電膜及びその製造方法 | |
TW201929252A (zh) | 鈣鈦礦太陽能電池與堆疊型太陽能電池 | |
Gupta et al. | Investigation of hysteresis in hole transport layer free metal halide perovskites cells under dark conditions | |
CN209963073U (zh) | 一种新型高效率双面入光CdTe钙钛矿叠层光伏电池 | |
Hwang et al. | Thermal treatment for enhancing performance of NiO/Ag/NiO transparent conducting electrode fabricated via magnetron radio-frequency sputtering | |
Hwang et al. | Enhanced compatibility between a copper nanowire-based transparent electrode and a hybrid perovskite absorber by poly (ethylenimine) | |
CN108735827A (zh) | 一种太阳能电池片及其制备方法、太阳能电池组件 | |
WO2024040920A1 (zh) | 一种空穴传输层及其应用 | |
KR101232717B1 (ko) | Ti-In-Zn-O 투명전극 및 이를 이용한 금속 삽입형 3층 구조 고전도도 투명전극과 이의 제조방법 | |
CN108231944A (zh) | 一种基于新型电子传输层的光电探测器及其制备方法 | |
KR20120137945A (ko) | 태양전지 및 그의 제조방법 | |
Kim et al. | Electrical and optical characteristics of transparent conducting Si-doped ZnO/hole-patterned Ag/Si-doped ZnO multilayer films | |
CN208157419U (zh) | 一种薄膜太阳能电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20161012 |