CN106020309A - High-voltage biasing circuit - Google Patents
High-voltage biasing circuit Download PDFInfo
- Publication number
- CN106020309A CN106020309A CN201610543513.6A CN201610543513A CN106020309A CN 106020309 A CN106020309 A CN 106020309A CN 201610543513 A CN201610543513 A CN 201610543513A CN 106020309 A CN106020309 A CN 106020309A
- Authority
- CN
- China
- Prior art keywords
- circuit
- voltage
- comparator
- outfan
- processor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention provides a high-voltage biasing circuit. The high-voltage biasing circuit comprises a processor, a diode voltage doubling circuit, a voltage feedback circuit and a voltage comparator circuit, wherein the voltage feedback circuit comprises a first resistor and a second resistor, and the voltage comparator circuit comprises a first comparator and a second comparator; an output end of the processor is connected with an input end of the diode voltage doubling circuit, and a first end of the first resistor is connected with any stage of voltage doubling branch circuits except the last-stage voltage doubling branch circuit in the diode voltage doubling circuit; a second end of the first resistor is connected with a first end of the second resistor, an in-phase input end of the first comparator and an inverted input end of the second comparator respectively, and a second end of the second resistor is grounded; and an output end of the first comparator is connected with a first external interruption input end of the processor, and an output end of the second comparator is connected with a second external interruption input end of the processor. All required devices of the high-voltage biasing circuit can be subjected to surface mounting through automation equipment, and an electromagnetic coil with relatively large volume is not used, so that the volume of a boosted circuit is greatly reduced.
Description
Technical field
The present invention relates to power technology, particularly relate to a kind of HVB high voltage bias circuit.
Background technology
At present, the work of many instruments and detection device (such as ray monitor etc.) is required for HVB high voltage bias power supply,
According to the difference of detector, required bias voltage from tens volts to hundreds of volts.
Typically widely use using transformer-type as booster circuit, power supply be increased to the high pressure of respective value,
Thus provide bias high voltage for corresponding equipment or instrument.
But, owing to the core devices of transformer circuit is transformator, and the structure that transformator is coil and skeleton, its bag
Including the coil of thousands of circle, volume is bigger, it is impossible to be applied to the equipment (such as dosimeter, wearable device etc.) of small volume
In.
Summary of the invention
The present invention provides a kind of HVB high voltage bias circuit, and in order to solve, booster circuit volume in prior art is relatively big, Wu Fashi
Technical problem for less electronic equipment.
First aspect, the present invention provides a kind of HVB high voltage bias circuit, including: processor, diode voltage-multiplying circuit, voltage are anti-
Current feed circuit and voltage comparator circuit；Described voltage feedback circuit includes the first resistance and the second resistance, described voltage comparator
Circuit includes having the first comparator of the first thresholding and have the second comparator of the second thresholding；
The outfan of described processor is connected with the input of described diode voltage-multiplying circuit, the first of described first resistance
Any level multiplication of voltage branch road held and remove afterbody multiplication of voltage branch road in described diode voltage-multiplying circuit is connected, described diode multiplication of voltage
The outfan output bias voltage of circuit；Second end of described first resistance respectively with the first end of described second resistance, described
The in-phase input end of the first comparator, the inverting input of described second comparator connect, the second termination of described second resistance
Ground；The outfan of described first comparator connects the first external interrupt input of described processor, described second comparator
Outfan connects the second external interrupt input of described processor.
Further, the first end of described first resistance is with first order multiplication of voltage branch road in described diode voltage-multiplying circuit even
Connect.
Further, described HVB high voltage bias circuit also includes pulse width regulating circuit and inductive flyback circuit；
Wherein, the outfan of described processor is connected with the input of described pulse width regulating circuit, described pulse-width adjustment electricity
The outfan on road is connected with the input of described inductive flyback circuit, and the outfan of described inductive flyback circuit connects described two poles
The input of pipe voltage-multiplying circuit.
Further, described pulse width regulating circuit includes the 3rd resistance, the 4th resistance, the first electric capacity and P-channel metal
Oxide semiconductor field effect PMOS；
Wherein, the outfan of described processor is respectively with the source electrode of the first end of described 3rd resistance, described PMOS even
Connecing, the second end of described 3rd resistance is connected with the first end, the grid of described PMOS of described first electric capacity respectively, and described
Second end ground connection of one electric capacity, the drain electrode of described PMOS respectively with the input of described inductive flyback circuit, described 4th electricity
First end of resistance connects, the second end ground connection of described 4th resistance.
Further, described HVB high voltage bias circuit also includes signal shaping integrated circuit；
The input of the described signal shaping integrated circuit that drains of described PMOS connects, described signal shaping integrated circuit
Outfan be connected with the input of described inductive flyback circuit.
Further, described inductive flyback circuit includes flyback inductance and N-channel metal oxide semiconductor field-effect
NMOS tube；
The outfan of described signal shaping integrated circuit is connected with the grid of described NMOS tube, and the source electrode of described NMOS tube connects
Ground, the drain electrode of described NMOS tube input with the first end of described flyback inductance, described diode voltage-multiplying circuit respectively is connected,
Second end of described flyback inductance is connected with power supply.
Further, the processor that described processor equipment belonging to described HVB high voltage bias circuit is used.
The HVB high voltage bias circuit that the present invention provides, by the input by the outfan of processor Yu diode voltage-multiplying circuit
Connect, the first end of the first resistance is removed any level multiplication of voltage branch road of afterbody multiplication of voltage branch road even in diode voltage-multiplying circuit
Connect, and by the second end of the first resistance respectively with the first end of the second resistance, the in-phase input end of the first comparator, second compare
The inverting input of device connects, and by the second end ground connection of the second resistance, by the outfan of the first comparator and processor
First external interrupt input connects, and is connected with the second external interrupt input of processor by the outfan of the second comparator,
Thus by diode voltage-multiplying circuit, the voltage that the outfan of processor exports is boosted, and in boost process, pass through
Any level multiplication of voltage branch road in addition to afterbody multiplication of voltage branch road in diode voltage-multiplying circuit is connected with voltage feedback circuit so that
Control of Voltage the first comparator that voltage comparator circuit can export according to this voltage feedback circuit and the second comparator defeated
Go out, so that processor is according to the height of the signal detected by the first external interrupt input, the second external interrupt input
Low level, controls the voltage to frequency of output signal of processor, so that it is guaranteed that the voltage of the outfan of diode voltage-multiplying circuit tends to
Stable.The device needed for HVB high voltage bias circuit in the present embodiment is all simple resistance, electric capacity, diode, comparator, these
Device all can carry out surface mount by automation equipment, it is not necessary to uses the solenoid that volume is bigger, greatly reduces liter
The volume of volt circuit, and need not manual welding, greatly reduce cost of labor；It addition, by voltage feedback circuit, voltage
Mutually the controlling of comparator circuit and processor coordinates, and the most dynamically adjusts the voltage of the outfan of diode voltage-multiplying circuit
Whole, it is achieved the voltage stabilizing of the outfan of diode voltage-multiplying circuit, it need not extra circuit debugging work, and production efficiency is high, and
And make electronic equipment operationally stable performance.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
In having technology to describe, the required accompanying drawing used is briefly described, it should be apparent that, the accompanying drawing in describing below is this
Some bright embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to
Other accompanying drawing is obtained according to these accompanying drawings.
The structural representation of the HVB high voltage bias circuit embodiments one that Fig. 1 provides for the present invention；
The structural representation of the HVB high voltage bias circuit embodiments two that Fig. 2 provides for the present invention；
The structural representation of the HVB high voltage bias circuit embodiments three that Fig. 3 provides for the present invention；
The structural representation of the HVB high voltage bias circuit embodiments four that Fig. 4 provides for the present invention；
Reference:
10: processor；11: diode voltage-multiplying circuit；12: voltage feedback circuit；
13: voltage comparator circuit；121: the first resistance；122: the second resistance；
131: the first comparators；132: the second comparators；
101: the outfan of processor；111: the input of diode voltage-multiplying circuit；
112: the outfan of diode voltage-multiplying circuit；First end of 1211: the first resistance；
Second end of 1212: the first resistance；First end of 1221: the second resistance；
Second end of 1222: the second resistance；102: the first external interrupt inputs；
103: the second external interrupt inputs；113: first order multiplication of voltage branch road；
14: pulse width regulating circuit；15: inductive flyback circuit；
141: the input of pulse width regulating circuit；142: the outfan of pulse width regulating circuit；
151: the input of inductive flyback circuit；152: the outfan of inductive flyback circuit；
143: the three resistance；144: the four resistance；145: the first electric capacity；
First end of 1431: the three resistance；Second end of 1432: the three resistance；
First end of 1441: the four resistance；Second end of 1442: the four resistance；
First end of 1451: the first electric capacity；Second end of 1452: the first electric capacity；
16: signal shaping integrated circuit；161: the input of signal shaping integrated circuit；
162: the outfan of signal shaping integrated circuit；153: flyback inductance；
1531: the first end of flyback inductance；1532: the second end of flyback inductance；
17: power supply.
Detailed description of the invention
For making the purpose of the embodiment of the present invention, technical scheme and advantage clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
The a part of embodiment of the present invention rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under not making creative work premise, broadly falls into the scope of protection of the invention.
The HVB high voltage bias circuit that the present invention relates to goes for needing work electronic equipment under high pressure arbitrarily, should
Electronic equipment frequently includes some need to be operated in tens volts to the device under hundreds of volt voltages, such as, be operated in tens volts
To the detector of radioactive substance doser under hundreds of volt voltages, the equipment such as detector of ray monitor.But, common
Cell voltage in electronic equipment is about 3V, in order to make these devices of electronic equipment normally work, it is necessary to set electronics
Standby cell voltage boosts, and uses transformer boost circuit, owing to the volume of transformator is bigger, it is impossible to suitable in prior art
In less electronic equipment.
HVB high voltage bias circuit provided by the present invention, it is intended to solve in above-mentioned prior art that booster circuit volume is relatively big, nothing
Method is applicable to the technical problem of less electronic equipment.
With specifically embodiment, technical scheme is described in detail below.These concrete enforcements below
Example can be combined with each other, and may repeat no more in some embodiment for same or analogous concept or process.
The structural representation of the HVB high voltage bias circuit embodiments one that Fig. 1 provides for the present invention.The present embodiment is by entering
The device of row surface mount (SMT), boosts to the cell voltage of electronic equipment required running voltage, and guarantees work electricity
Stablizing of pressure, it is not necessary to boosted by large coil, substantially reduce the volume of booster circuit.As it is shown in figure 1, this high pressure
Biasing circuit includes processor 10, diode voltage-multiplying circuit 11, voltage feedback circuit 12 and voltage comparator circuit 13；Described electricity
Pressure feedback circuit 12 includes the first resistance 121 and the second resistance 122, and described voltage comparator circuit 13 includes having the first thresholding
The first comparator 131 (i.e. U6 in Fig. 1) and there is the second comparator 132 (i.e. U7 in Fig. 1) of the second thresholding；
The outfan 101 (i.e. MCU CTRL end in Fig. 1) of described processor 10 and described diode voltage-multiplying circuit 11
Input 111 connects, and the first end 1211 of described first resistance 121 removes afterbody times in described diode voltage-multiplying circuit 11
Any level multiplication of voltage branch road of pressure branch road connects, and the outfan 112 of described diode voltage-multiplying circuit 11 exports bias voltage；Described
Second end 1212 of one resistance 121 respectively with the first end 1221 of described second resistance 122, described first comparator 131 same
Phase input, the inverting input of described second comparator 132 connect, the second end 1222 ground connection of described second resistance 122；Institute
The outfan (i.e. HL Stop in Fig. 1) stating the first comparator 131 connects the first external interrupt input of described processor 10
102, the outfan (i.e. HL Start in Fig. 1) of described second comparator 132 connects in the second outside of described processor 10
Disconnected input 103.
Concrete, the processor 10 in the present embodiment can be that the center processor 10 with electronic equipment shares one, should
Processor 10 can be the processor 10 of any operative frequency, arbitrary model, such as, can be micro-control unit
(Microcontroller Unit is called for short MCU), single-chip microcomputer etc..Processor 10 in the present embodiment, is mainly used in diode
Voltage-multiplying circuit inputs a voltage signal so that this voltage signal is carried out times several levels and amplifies by diode voltage-multiplying circuit 11, meanwhile, and should
Processor 10 is additionally operable to receive above-mentioned voltage comparator circuit 13 and exports to process according to the feedback voltage of voltage feedback circuit 12
The interrupt signal of device 10, processor 10 controls the frequency of processor 10 output signal according to this interrupt signal and (exports in i.e. one second
The number of times of signal), the height of the frequency of this signal output determines the voltage of the outfan 112 of following diode voltage-multiplying circuit 11
(voltage of the outfan 112 of diode voltage-multiplying circuit 11 rises step by step, processor in 10 1 seconds output signal the most, its
The voltage of the outfan 112 of diode voltage-multiplying circuit 11 is the biggest).
Above-mentioned diode voltage-multiplying circuit 11 includes multistage multiplication of voltage branch road, carries out multiple for the voltage exported by processor 10
Level boosting, thus by the outfan 112 of diode voltage-multiplying circuit 11, the voltage after boosting is exported to the load of rear end, such as
The detector of detection radioactive substance.It should be noted that diode voltage-multiplying circuit 11 outfan 112 output voltage be with
What the power consumption loaded was changed, such as, as a example by load is for the detector of detection radioactive substance, when detector is in by force
Time in radiation environment, the power consumption of load becomes big, it means that the outfan 112 of diode voltage-multiplying circuit 11 to export more electricity
Stream, therefore, now the voltage of the outfan 112 of diode voltage-multiplying circuit 11 just have dropped, then or, by diode times piezoelectricity
Voltage after the boosting of road 11 is constantly in persistently soaring state, therefore, stable in order to ensure diode voltage-multiplying circuit 11 output
Voltage, the present embodiment arranges a voltage feedback circuit 12 on any level multiplication of voltage branch road of diode voltage-multiplying circuit 11.Due to
Diode has certain reverse leakage properties of flow, is positioned at any level before afterbody voltage in diode voltage-multiplying circuit 11
Voltage become the ratio fixed with afterbody voltage, therefore according to diode voltage-multiplying circuit 11 is positioned at afterbody voltage it
The feedback voltage of front any level, so that it may be calculated voltage (the i.e. outfan 112 of diode voltage-multiplying circuit 11 of afterbody
Voltage), i.e. by diode voltage-multiplying circuit 11 is positioned at the change of the feedback voltage of any level before afterbody voltage
Trend can be obtained by the variation tendency of the voltage of the outfan 112 of diode voltage-multiplying circuit 11, therefore, it can Voltage Feedback
Circuit 12 is arranged in diode voltage-multiplying circuit 11 on any level multiplication of voltage branch road except afterbody multiplication of voltage branch road and voltage is anti-
The outfan of current feed circuit 12 couples together with the voltage comparator circuit 13 of rear end, and the voltage comparator circuit 13 for rear end provides
Feedback voltage.The most why voltage feedback circuit 12 is arranged in diode voltage-multiplying circuit 11 except afterbody multiplication of voltage branch road
Any level multiplication of voltage branch road on, and the outfan of voltage feedback circuit 12 is attached with voltage comparator circuit 13, be because of
For diode voltage-multiplying circuit 11 outfan 112 export voltage be hundreds of volt to upper kilovolt, be unsatisfactory for voltage comparator
The input voltage requirement of circuit 13, easily burns voltage comparator circuit 13, and if arranged by voltage feedback circuit 12
If the outfan 112 of diode voltage-multiplying circuit 11, even if using the form of electric resistance partial pressure to reduce input voltage after voltage
Comparator circuit 13, if (i.e. last is over the ground for last resistance in the several divider resistances in voltage feedback circuit 12
Resistance) if failure welding or inefficacy cause open circuit, high pressure will be introduced directly into voltage comparator circuit 13, causes comparator
Burn；But, voltage feedback circuit 12 is arranged in diode voltage-multiplying circuit 11 and removes the arbitrary of afterbody multiplication of voltage branch road
On level multiplication of voltage branch road, it will the voltage avoiding the outfan of voltage feedback circuit 12 is excessive, burns out the voltage comparator of rear end.
Above-mentioned voltage comparator circuit 13 includes having the first comparator 131 of the first thresholding and has the of the second thresholding
Two comparators 132, wherein, the first comparator 131 is high voltage trigger comparator, and the second comparator 132 triggers ratio for low-voltage
Relatively device, the first the most above-mentioned thresholding is more than the second thresholding.The feedback voltage exported when the outfan of voltage feedback circuit 12 is higher than
During the first thresholding, show that the voltage of the outfan 112 of current diode voltage-multiplying circuit 11 is excessive, now, the first comparator 131
Outfan output high level, the outfan output low level of the second comparator 132, thus wake up processor 10 up, processor 10 this
Time reduce the frequency of outfan 101 output signal of processor 10, thus reduce the outfan 112 of diode voltage-multiplying circuit 11
Voltage；When the feedback voltage that the outfan of voltage feedback circuit 12 exports is less than the second thresholding, show current diode multiplication of voltage
The voltage of the outfan 112 of circuit 11 is too small, now, the outfan output low level of the first comparator 131, the second comparator
The outfan output high level of 132, thus wake up processor 10 up, the outfan 101 that processor 10 now increases processor 10 is defeated
Go out the frequency of signal, thus raise the voltage of the outfan 112 of diode voltage-multiplying circuit 11.
It is to say, the voltage signal that the HVB high voltage bias circuit in the present embodiment is exported by processor 10, through diode
Voltage-multiplying circuit 11 carries out voltage multiplication level amplification so that the voltage of the outfan 112 of diode voltage-multiplying circuit 11 disclosure satisfy that works as
Before job demand, and in boost process, in order to ensure the stablizing of voltage of the outfan 112 of diode voltage-multiplying circuit 11,
By by any level multiplication of voltage branch road in addition to afterbody multiplication of voltage branch road in diode voltage-multiplying circuit 11 and voltage feedback circuit 12
Connect so that voltage comparator circuit 13 can be according to Control of Voltage first comparator 131 of this voltage feedback circuit 12 output
With the output of the second comparator 132 so that processor 10 is according to first external interrupt input the 102, second external interrupt
The low and high level of the signal detected by input 103, controls the frequency of processor 10 output signal, so that it is guaranteed that diode times
The voltage of the outfan 112 of volt circuit 11 tends towards stability.The device needed for HVB high voltage bias circuit in the present embodiment is all simple
Resistance, electric capacity, diode, comparator, these devices all can carry out surface mount by automation equipment, it is not necessary to manual
Welding, greatly reduces cost of labor, and without using the solenoid that volume is bigger, greatly reduces the body of booster circuit
Long-pending；It addition, by voltage feedback circuit 12, voltage comparator circuit 13 and processor 10 mutually control coordinate, to diode
The voltage of the outfan 112 of voltage-multiplying circuit 11 the most dynamically adjusts, it is achieved the outfan 112 of diode voltage-multiplying circuit 11
Voltage stabilizing, it need not extra circuit debugging work, production efficiency height, and makes electronic equipment operationally stable performance.
The HVB high voltage bias circuit that the present invention provides, by the input by the outfan of processor Yu diode voltage-multiplying circuit
Connect, the first end of the first resistance is removed any level multiplication of voltage branch road of afterbody multiplication of voltage branch road even in diode voltage-multiplying circuit
Connect, and by the second end of the first resistance respectively with the first end of the second resistance, the in-phase input end of the first comparator, second compare
The inverting input of device connects, and by the second end ground connection of the second resistance, by the outfan of the first comparator and processor
First external interrupt input connects, and is connected with the second external interrupt input of processor by the outfan of the second comparator,
Thus by diode voltage-multiplying circuit, the voltage that the outfan of processor exports is boosted, and in boost process, pass through
Any level multiplication of voltage branch road in addition to afterbody multiplication of voltage branch road in diode voltage-multiplying circuit is connected with voltage feedback circuit so that
Control of Voltage the first comparator that voltage comparator circuit can export according to this voltage feedback circuit and the second comparator defeated
Go out, so that processor is according to the height of the signal detected by the first external interrupt input, the second external interrupt input
Low level, controls the voltage to frequency of output signal of processor, so that it is guaranteed that the voltage of the outfan of diode voltage-multiplying circuit tends to
Stable.The device needed for HVB high voltage bias circuit in the present embodiment is all simple resistance, electric capacity, diode, comparator, these
Device all can carry out surface mount by automation equipment, it is not necessary to uses the solenoid that volume is bigger, greatly reduces liter
The volume of volt circuit, and need not manual welding, greatly reduce cost of labor；It addition, by voltage feedback circuit, voltage
Mutually the controlling of comparator circuit and processor coordinates, and the most dynamically adjusts the voltage of the outfan of diode voltage-multiplying circuit
Whole, it is achieved the voltage stabilizing of the outfan of diode voltage-multiplying circuit, it need not extra circuit debugging work, and production efficiency is high, and
And make electronic equipment operationally stable performance.
Optionally, the structural representation of HVB high voltage bias circuit embodiments two shown in Figure 2, above-mentioned first resistance 121
The first end 1211 be connected with first order multiplication of voltage branch road 113 in diode voltage-multiplying circuit 11, so make voltage feedback circuit 12
Load capacity strengthen, thus more guarantee the stability of the voltage of the outfan 112 of diode voltage-multiplying circuit 11.
The structural representation of the HVB high voltage bias circuit embodiments three that Fig. 3 provides for the present invention.In above-mentioned embodiment illustrated in fig. 2
On the basis of, further, above-mentioned HVB high voltage bias circuit also includes pulse width regulating circuit 14 and inductive flyback circuit 15；
Wherein, the outfan 101 of described processor 10 is connected with the input 141 of described pulse width regulating circuit 14, described
The outfan 142 of pulse width regulating circuit 14 is connected with the input 151 of described inductive flyback circuit 15, described inductive flyback circuit
The outfan 152 of 15 connects the input 111 of described diode voltage-multiplying circuit 11.
Concrete, in order to reduce the power consumption of HVB high voltage bias circuit, therefore, to assure that the operating frequency of processor 10 is as far as possible
Low (minimum pulse width that processor 10 typically can be given is a clock cycle), but if the operating frequency of processor 10 relatively
Low, then the pulsewidth of its correspondence is the biggest, thus the ON time over the ground of the inductance in inductive flyback circuit 15 can be made long, power consumption
Excessive；Such as, if processor 10 uses 32768Hz crystal oscillator, the minimum pulse width of its output is 30.5 microseconds.If with this
Pulsewidth directly controls inductive flyback circuit 15, and inductance ON time over the ground can be made long, and power consumption is excessive.Therefore, in order to reduce height
The power consumption of pressure biasing circuit, the outfan 101 of processor 10, on the basis of shown in above-mentioned Fig. 2, is adjusted by the present embodiment with pulsewidth
The input 141 of whole circuit 14 is attached, and by the outfan 142 of pulse width regulating circuit 14 with inductive flyback circuit 15 even
Connect, so that the pulse signal of outfan 101 output of processor 10 is adjusted through pulse width regulating circuit 14 so that it is reduce
Pulsewidth to the control signal that disclosure satisfy that inductive flyback circuit 15 requires, such as, is exported by above-mentioned processor 10
The pulsewidth of 30.5 microseconds, shortens to 3 microseconds.So, processor 10 need not be operated under higher frequency, and it is available relatively
Low operating frequency, coordinates pulse width regulating circuit 14, controls inductive flyback circuit 15 and work.Therefore, the power consumption of processor 10
Being greatly diminished, the power consumption of HVB high voltage bias circuit is lowered by the most significantly.
It should be noted that the size of above-mentioned pulsewidth after pulse width regulating circuit 14 adjusts is really inductive flyback electricity
The duration that in road 15, inductance turns on over the ground, the duration that the flyback voltage that namely goes out through inductive flyback is lasting, this flyback voltage
More than the voltage of the signal of processor 10 output, this flyback voltage inputs to two poles through the outfan 152 of inductive flyback circuit 15
The input 111 of pipe voltage-multiplying circuit 11, so that this flyback voltage is amplified by diode voltage-multiplying circuit 11.Due to above-mentioned
Flyback voltage is more than the voltage of the signal of processor 10 output, and therefore, the progression of its required diode voltage-multiplying circuit 11 is less,
Decrease the respective load of HVB high voltage bias circuit, also substantially increase boosting efficiency.
Optionally, above-mentioned pulse width regulating circuit 14 can be the circuit arbitrarily with pulse-width adjustment function, the present invention couple
The form of pulse width regulating circuit 14 does not limit, and optionally, above-mentioned inductive flyback circuit 15 can be any form of inductance
Circuit of reversed excitation 15, as long as it flyback can go out the voltage of signal more than processor 10 output.
The embodiment of the present application provide HVB high voltage bias circuit, by by the outfan of processor by pulse width regulating circuit with
Inductive flyback circuit connects so that processor can be operated under relatively low operating frequency, greatly reduces HVB high voltage bias circuit
Power consumption with processor；Further, since the flyback voltage that inductive flyback circuit flyback goes out is more than the electricity of the signal of processor output
Pressure, therefore, the progression of its required diode voltage-multiplying circuit is less, decreases the respective load of HVB high voltage bias circuit, the most significantly
Improve boosting efficiency.
The structural representation of the HVB high voltage bias circuit embodiments four that Fig. 4 provides for the present invention.In above-mentioned embodiment illustrated in fig. 3
On the basis of, further, as shown in Figure 4, above-mentioned pulse width regulating circuit 14 include the 3rd resistance 143, the 4th resistance 144,
One electric capacity 145 and P-channel metal-oxide-semiconductor field effect PMOS；Wherein, the outfan 101 of described processor 10 is respectively
It is connected with the first end 1431, the source electrode of described PMOS of described 3rd resistance 143, the second end of described 3rd resistance 143
1432 are connected with the first end 1451, the grid of described PMOS of described first electric capacity 145 respectively, described first electric capacity 145
Second end 1452 ground connection, the drain electrode of described PMOS respectively with the input 151 of described inductive flyback circuit 15, described 4th electricity
Resistance 144 the first end 1441 connect, described 4th resistance 144 the second end 1442 ground connection.
Above-mentioned inductive flyback circuit 15 includes flyback inductance 153 and N-channel metal oxide semiconductor field-effect NMOS tube；
The outfan 162 of this signal shaping integrated circuit 16 is connected with the grid of described NMOS tube, the source ground of described NMOS tube, institute
State the drain electrode of NMOS tube respectively with the first end 1531, the input of described diode voltage-multiplying circuit 11 of described flyback inductance 153
111 connect, and the second end 1532 of described flyback inductance 153 is connected with power supply 17.
Concrete, the work process of this pulse width regulating circuit 14 is as follows: the outfan 101 of processor 10 exports a pulsewidth relatively
The wide square-wave signal operating frequency of this processor 10 (assume be the 32768Hz in previous example), this pulsewidth is 30.5 microseconds,
That is the signal of the high level of processor 10 output can continue 30.5 microseconds.When processor 10 is output as high level,
This high level charges to the first electric capacity 145 (i.e. C21 in figure) through the 3rd resistance 143 (i.e. R21 in Fig. 4), now, and the 3rd electricity
Voltage between second end 1432 and first end 1451 of the first electric capacity 145 of resistance 143 is low-voltage (almost nil), the most now
The grid of PMOS (i.e. Q1 in Fig. 4) is low level, and PMOS turns on, and the voltage of the outfan 101 of processor 10 is through PMOS
The source electrode of pipe arrives the drain electrode of PMOS, and now the drain voltage of PMOS is high level, i.e. the output of pulse width regulating circuit 14
End 142 is output as high level.Further, since above-mentioned first electric capacity 145 only need the less time with regard to fully charged (charging interval by
The capacitance characteristic of the first electric capacity 145 determines, it is assumed that its 3 microsecond is just full of), when the first electric capacity 145 is full of, the grid of PMOS
For high level, PMOS turns off, and above-mentioned 4th resistance 144 is by the voltage pull-down of the drain electrode of current PMOS so that PMOS
The voltage of drain electrode output low level, i.e. the outfan 142 of pulse width regulating circuit 14 is output as low level.It is to say, above-mentioned arteries and veins
Its high level of signal of wide adjustment circuit 14 output continue for 3 microseconds and just becomes low level, i.e. pulse width regulating circuit 14 output
Signal pulsewidth is 3 microseconds, thus it is 3 that the voltage signal that pulsewidth is 30.5 microseconds exported by above-mentioned processor 10 is adjusted to pulsewidth
The voltage signal of microsecond, when so making the inductance in the inductive flyback circuit 15 being connected with pulse width regulating circuit 14 turn on over the ground
Between only continue 3 microseconds, greatly reduce the power consumption of booster circuit.The pulsewidth of the signal after the adjustment of this pulse width regulating circuit 14 is big
Little, depend on the charging interval of above-mentioned first electric capacity 145, this charging interval is the shortest, and the signal pulsewidth after adjustment is the least, this charging
Time is the longest, and the signal pulsewidth after adjustment is the biggest, choosing of this first torch, determines according to actually required pulsewidth.
Optionally, above-mentioned HVB high voltage bias circuit can also include signal shaping integrated circuit 16；The drain electrode of described PMOS
The input 161 of described signal shaping integrated circuit 16 connects, and the outfan 162 of described signal shaping integrated circuit 16 is with described
The input 151 of inductive flyback circuit 15 connects.This signal shaping integrated circuit 16 can be by defeated for above-mentioned pulse width regulating circuit 14
Signal after the pulse-width adjustment gone out carries out waveform shaping, obtains the square-wave signal of standard, so that inductive flyback circuit 15
To being accurately controlled.
When the signal that the outfan 162 of signal shaping integrated circuit 16 exports is high level signal, NMOS tube (i.e. Fig. 4
In Q2) conducting, then flyback inductance 153 (i.e. L1 in Fig. 4) turns on over the ground, thus goes out in the upper end flyback of the drain electrode of NMOS tube
One voltage, the input 111 of this flyback voltage output to diode voltage-multiplying circuit 11, through 11 times of several levels of diode voltage-multiplying circuit
Amplify and export；It addition, in boost process, by diode voltage-multiplying circuit 11 being connected to first order multiplication of voltage branch road 113
On so that voltage feedback circuit 12 exports feedback voltage to voltage comparator circuit 13；When voltage feedback circuit 12 output anti-
When feedthrough voltage is higher than the first thresholding, show that the voltage of the outfan 112 of current diode voltage-multiplying circuit 11 is excessive, now, first
The outfan output high level of comparator 131, the outfan output low level of the second comparator 132, thus wake up processor 10 up,
Processor 10 now reduces the frequency (number of times of output signal in i.e. reducing by a second) of processor 10 output signal, thus reduces electricity
The operating frequency (number of times of flyback in i.e. a second) of sense circuit of reversed excitation 15, and then reduce the outfan of diode voltage-multiplying circuit 11
The voltage of 112；When the feedback voltage of voltage feedback circuit 12 output is less than the second thresholding, show current diode voltage-multiplying circuit
The voltage of the outfan 112 of 11 is too small, now, and the outfan output low level of the first comparator 131, the second comparator 132
Outfan output high level, thus wake up processor 10 up, processor 10 now increases the frequency of processor 10 output signal, thus
The operating frequency of increasing inductive flyback circuit 15, and then increase the voltage of the outfan 112 of diode voltage-multiplying circuit 11, thus really
The voltage of the outfan 112 protecting diode voltage-multiplying circuit 11 tends towards stability.It addition, in the present embodiment, processor 10 is above-mentioned height
Equipment belonging to the processor 10 that pressure equipment belonging to biasing circuit is used, i.e. this HVB high voltage bias circuit and HVB high voltage bias circuit
Can share a processor 10, it greatly reduces the cost of whole HVB high voltage bias circuit.
The HVB high voltage bias circuit that the present invention provides, by the 3rd resistance, the 4th resistance, the first electric capacity and the connection of PMOS
Constitute pulse width regulating circuit, the pulse-width adjustment of the voltage signal that processor can effectively be exported rapidly by this pulse width regulating circuit
Rear required pulsewidth, its simple in construction, pulse-width adjustment efficiency is high, can be substantially reduced high pressure by this pulse width regulating circuit inclined
The power consumption of circuits；It addition, the letter after the pulse-width adjustment above-mentioned pulse width regulating circuit exported by signal shaping integrated circuit
Number carry out waveform shaping, obtain the square-wave signal of standard, so that inductive flyback circuit is precisely controlled.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, it is not intended to limit；To the greatest extent
The present invention has been described in detail by pipe with reference to foregoing embodiments, it will be understood by those within the art that: it depends on
So the technical scheme described in foregoing embodiments can be modified, or the most some or all of technical characteristic is entered
Row equivalent；And these amendments or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme.
Claims (7)
1. a HVB high voltage bias circuit, it is characterised in that including: processor, diode voltage-multiplying circuit, voltage feedback circuit and electricity
Pressure comparator circuit；Described voltage feedback circuit includes the first resistance and the second resistance, and described voltage comparator circuit includes tool
There is the first comparator of the first thresholding and there is the second comparator of the second thresholding；
The outfan of described processor is connected with the input of described diode voltage-multiplying circuit, the first end of described first resistance with
In described diode voltage-multiplying circuit, any level multiplication of voltage branch road except afterbody multiplication of voltage branch road connects, described diode voltage-multiplying circuit
Outfan output bias voltage；Second end of described first resistance respectively with the first end of described second resistance, described first
The in-phase input end of comparator, the inverting input of described second comparator connect, the second end ground connection of described second resistance；Institute
The outfan stating the first comparator connects the first external interrupt input of described processor, the outfan of described second comparator
Connect the second external interrupt input of described processor.
HVB high voltage bias circuit the most according to claim 1, it is characterised in that the first end of described first resistance and described two
In the pipe voltage-multiplying circuit of pole, first order multiplication of voltage branch road connects.
HVB high voltage bias circuit the most according to claim 2, it is characterised in that described HVB high voltage bias circuit also includes that pulsewidth is adjusted
Whole circuit and inductive flyback circuit；
Wherein, the outfan of described processor is connected with the input of described pulse width regulating circuit, described pulse width regulating circuit
Outfan is connected with the input of described inductive flyback circuit, and the outfan of described inductive flyback circuit connects described diode times
The input of volt circuit.
HVB high voltage bias circuit the most according to claim 3, it is characterised in that described pulse width regulating circuit includes the 3rd electricity
Resistance, the 4th resistance, the first electric capacity and P-channel metal-oxide-semiconductor field effect PMOS；
Wherein, the outfan of described processor is connected with the first end, the source electrode of described PMOS of described 3rd resistance respectively, institute
The second end stating the 3rd resistance is connected with the first end, the grid of described PMOS of described first electric capacity respectively, described first electricity
The the second end ground connection held, the drain electrode of described PMOS respectively with the input of described inductive flyback circuit, described 4th resistance
First end connects, the second end ground connection of described 4th resistance.
HVB high voltage bias circuit the most according to claim 4, it is characterised in that described HVB high voltage bias circuit also includes that signal is whole
Shape integrated circuit；
The input of the described signal shaping integrated circuit that drains of described PMOS connects, described signal shaping integrated circuit defeated
Go out end to be connected with the input of described inductive flyback circuit.
HVB high voltage bias circuit the most according to claim 5, it is characterised in that described inductive flyback circuit includes flyback inductance
With N-channel metal oxide semiconductor field-effect NMOS tube；
The outfan of described signal shaping integrated circuit is connected with the grid of described NMOS tube, the source ground of described NMOS tube,
The drain electrode of described NMOS tube input with the first end of described flyback inductance, described diode voltage-multiplying circuit respectively is connected, institute
The second end stating flyback inductance is connected with power supply.
7. according to the HVB high voltage bias circuit described in any one of claim 1-6, it is characterised in that described processor is described high pressure
The processor that equipment belonging to biasing circuit is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610543513.6A CN106020309B (en) | 2016-07-11 | 2016-07-11 | HVB high voltage bias circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610543513.6A CN106020309B (en) | 2016-07-11 | 2016-07-11 | HVB high voltage bias circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106020309A true CN106020309A (en) | 2016-10-12 |
| CN106020309B CN106020309B (en) | 2017-12-15 |
Family
ID=57109388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610543513.6A Expired - Fee Related CN106020309B (en) | 2016-07-11 | 2016-07-11 | HVB high voltage bias circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106020309B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110798219A (en) * | 2019-10-16 | 2020-02-14 | 中国兵器工业集团第二一四研究所苏州研发中心 | Differential signal processing circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101154885A (en) * | 2006-09-29 | 2008-04-02 | 台湾类比科技股份有限公司 | Width pulse modulation booster system and its starting method |
| US7391190B1 (en) * | 2006-04-03 | 2008-06-24 | National Semiconductor Corporation | Apparatus and method for three-phase buck-boost regulation |
| CN101562922A (en) * | 2009-05-31 | 2009-10-21 | 南京航空航天大学 | High brightness LED driving power without electrolytic capacitor |
| CN103715882A (en) * | 2012-09-28 | 2014-04-09 | 美国亚德诺半导体公司 | System and method for generating a regulated boosted voltage by using a controller variable number of charge pump circuits |
| CN104216453A (en) * | 2013-07-11 | 2014-12-17 | 马鞍山恒瑞测量设备有限公司 | Low-current high-accuracy variable voltage output device |
| CN205179327U (en) * | 2015-10-23 | 2016-04-20 | 广州丹盾电子有限公司 | Take power protection's digital audio amplifier |
| CN205920434U (en) * | 2016-07-11 | 2017-02-01 | 孟令冬 | High pressure bias circuit |
-
2016
- 2016-07-11 CN CN201610543513.6A patent/CN106020309B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7391190B1 (en) * | 2006-04-03 | 2008-06-24 | National Semiconductor Corporation | Apparatus and method for three-phase buck-boost regulation |
| CN101154885A (en) * | 2006-09-29 | 2008-04-02 | 台湾类比科技股份有限公司 | Width pulse modulation booster system and its starting method |
| CN101562922A (en) * | 2009-05-31 | 2009-10-21 | 南京航空航天大学 | High brightness LED driving power without electrolytic capacitor |
| CN103715882A (en) * | 2012-09-28 | 2014-04-09 | 美国亚德诺半导体公司 | System and method for generating a regulated boosted voltage by using a controller variable number of charge pump circuits |
| CN104216453A (en) * | 2013-07-11 | 2014-12-17 | 马鞍山恒瑞测量设备有限公司 | Low-current high-accuracy variable voltage output device |
| CN205179327U (en) * | 2015-10-23 | 2016-04-20 | 广州丹盾电子有限公司 | Take power protection's digital audio amplifier |
| CN205920434U (en) * | 2016-07-11 | 2017-02-01 | 孟令冬 | High pressure bias circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110798219A (en) * | 2019-10-16 | 2020-02-14 | 中国兵器工业集团第二一四研究所苏州研发中心 | Differential signal processing circuit |
| CN110798219B (en) * | 2019-10-16 | 2023-10-03 | 中国兵器工业集团第二一四研究所苏州研发中心 | Differential signal processing circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106020309B (en) | 2017-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101882864B (en) | Electrifying startup circuit and electrifying startup method thereof | |
| CN103996389A (en) | Power supply circuit and display device | |
| CN103116062A (en) | Circuit and method for detecting voltage peak | |
| CN103368360B (en) | A kind of switch power supply control method, switching power source control circuit and switch power supply | |
| CN106023877A (en) | Public voltage adjusting circuit and method and display panel and device | |
| CN102999074A (en) | Low dropout regulator | |
| CN102055311B (en) | Linear voltage-stabilized power supply device and soft start method thereof | |
| CN103677047A (en) | LDO (low dropout regulator) quick starting circuit | |
| CN207542990U (en) | A kind of soft starting circuit based on TL431 closed-loop controls | |
| CN103066972B (en) | Power-on reset circuit with global enabling pulse control automatic reset function | |
| CN105242426B (en) | The power-up time delay circuit and liquid crystal display of a kind of liquid crystal display | |
| CN106020309B (en) | HVB high voltage bias circuit | |
| US20150042302A1 (en) | Power management apparatus with rapid short response and full load recovery | |
| CN205920434U (en) | High pressure bias circuit | |
| CN103529895A (en) | High-stability voltage regulator | |
| TW201509091A (en) | Voltage boosting circuit capable of modulating duty cycle automatically | |
| CN110854961B (en) | Power-on impact current suppression circuit | |
| CN105159385B (en) | Low-power-dissipation low-dropout voltage regulator | |
| CN105404344A (en) | Voltage regulator with no ringing | |
| CN106531059A (en) | Display screen drive circuit and electronic equipment | |
| CN103475338A (en) | High-precision low-voltage oscillator | |
| CN103532381A (en) | Ramp compensating circuit | |
| CN108667287A (en) | A kind of auto-excitation type charge pump circuit | |
| CN109683648A (en) | A kind of LDO circuit | |
| CN100561843C (en) | Power circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171215 Termination date: 20190711 |