CN106020309B - HVB high voltage bias circuit - Google Patents
HVB high voltage bias circuit Download PDFInfo
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- CN106020309B CN106020309B CN201610543513.6A CN201610543513A CN106020309B CN 106020309 B CN106020309 B CN 106020309B CN 201610543513 A CN201610543513 A CN 201610543513A CN 106020309 B CN106020309 B CN 106020309B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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Abstract
The present invention provides a kind of HVB high voltage bias circuit, and the circuit includes：The voltage feedback circuit of processor, diode voltage-multiplying circuit including first resistor and second resistance and the voltage comparator circuit including first comparator and the second comparator；The output end of processor is connected with the input of diode voltage-multiplying circuit, and the first end of first resistor is connected with removing any level multiplication of voltage branch road of afterbody multiplication of voltage branch road in diode voltage-multiplying circuit；The first end with second resistance, the in-phase input end of first comparator, the inverting input of the second comparator are connected respectively at second end of first resistor, the second end ground connection of second resistance；First external interrupt input of the output end connection processor of first comparator, the second external interrupt input of the output end connection processor of the second comparator.Device needed for the circuit of the present invention can carry out surface mount by automation equipment, without using the larger magnet coil of volume, greatly reduce the volume of booster circuit.
Description
Technical field
The present invention relates to power technology, more particularly to a kind of HVB high voltage bias circuit.
Background technology
At present, HVB high voltage bias power supply is required in the work of many instruments and detection means (such as ray monitor etc.),
According to the difference of detector, required bias voltage is from tens volts to hundreds of volts.
Typically widely using using transformer-type as booster circuit, power supply is increased to the high pressure of respective value,
So as to provide bias high voltage for corresponding equipment or instrument.
But because the core devices of transformer circuit are transformer, and transformer is the structure of coil and skeleton, it is wrapped
The coil of thousands of circles is included, volume is larger, can not be applied to the equipment (such as dosimeter, wearable device etc.) of small volume
In.
The content of the invention
The present invention provides a kind of HVB high voltage bias circuit, and to solve, booster circuit volume in the prior art is larger, Wu Fashi
Technical problem for less electronic equipment.
In a first aspect, the present invention provides a kind of HVB high voltage bias circuit, including：Processor, diode voltage-multiplying circuit, voltage are anti-
Current feed circuit and voltage comparator circuit；The voltage feedback circuit includes first resistor and second resistance, the voltage comparator
Circuit includes the first comparator with the first thresholding and the second comparator with the second thresholding；
The output end of the processor is connected with the input of the diode voltage-multiplying circuit, the diode voltage-multiplying circuit
Output end output bias voltage；Second end of the first resistor first end with the second resistance, described first respectively
The inverting input connection of the in-phase input end of comparator, second comparator, the second end ground connection of the second resistance；Institute
The output end for stating first comparator connects the first external interrupt input of the processor, the output end of second comparator
Connect the second external interrupt input of the processor.
Further, the first end of the first resistor connects with first order multiplication of voltage branch road in the diode voltage-multiplying circuit
Connect, the first order multiplication of voltage branch road includes：3rd electric capacity, the second electric capacity, the first diode and the second diode；The processor
Output end electrically connected respectively with the positive pole of first diode and the first end of the 3rd electric capacity；First diode
Negative pole and the positive pole of second diode, the first end of the second electric capacity, the first of the first resistor of the voltage feedback circuit
The electrical connection of the first input end of end and second level multiplication of voltage branch road；The second end ground connection of second electric capacity；Two or two pole
The negative pole of pipe electrically connects with the second end of the 3rd electric capacity and the second input of the second level multiplication of voltage branch road respectively.
Further, the processor output voltage signal.
Further, the HVB high voltage bias circuit also includes pulse width regulating circuit and inductive flyback circuit；
Wherein, the output end of the processor is connected with the input of the pulse width regulating circuit, the pulse-width adjustment electricity
The output end on road is connected with the input of the inductive flyback circuit, and the output end of the inductive flyback circuit connects two pole
The input of pipe voltage-multiplying circuit.
Further, the pulse width regulating circuit includes 3rd resistor, the 4th resistance, the first electric capacity and P-channel metal
Oxide semiconductor field effect PMOS；
Wherein, the first end with the 3rd resistor, the source electrode of the PMOS connect the output end of the processor respectively
Connecing, the first end with first electric capacity, the grid of the PMOS are connected respectively at the second end of the 3rd resistor, and described
The second end ground connection of one electric capacity, the drain input with the inductive flyback circuit, the 4th electricity respectively of the PMOS
The first end connection of resistance, the second end ground connection of the 4th resistance.
Further, the HVB high voltage bias circuit also includes signal shaping integrated circuit；
The input connection of the drain electrode signal shaping integrated circuit of the PMOS, the signal shaping integrated circuit
Output end be connected with the input of the inductive flyback circuit.
Further, the inductive flyback circuit includes flyback inductance and N-channel metal oxide semiconductor field-effect
NMOS tube；
The output end of the signal shaping integrated circuit is connected with the grid of the NMOS tube, and the source electrode of the NMOS tube connects
Ground, the first end with the flyback inductance, the input of the diode voltage-multiplying circuit are connected respectively for the drain electrode of the NMOS tube,
Second end of the flyback inductance is connected with power supply.
Further, the processor is processor used in the equipment belonging to the HVB high voltage bias circuit.
HVB high voltage bias circuit provided by the invention, by by the input of the output end of processor and diode voltage-multiplying circuit
Connection, any level multiplication of voltage branch road company that afterbody multiplication of voltage branch road will be removed in the first end of first resistor and diode voltage-multiplying circuit
Connect, and by compared with the second end of the first resistor respectively first end with second resistance, the in-phase input end of first comparator, second
The inverting input connection of device, and the second end of second resistance is grounded, by the output end of first comparator and processor
First external interrupt input is connected, and the second external interrupt input of the output end of the second comparator and processor is connected,
So as to which the voltage that the output end of processor exports be boosted by diode voltage-multiplying circuit, and in boost process, pass through
Any level multiplication of voltage branch road in diode voltage-multiplying circuit in addition to afterbody multiplication of voltage branch road is connected with voltage feedback circuit so that
Voltage comparator circuit can be according to the defeated of the voltage control first comparator and the second comparator that the voltage feedback circuit exports
Go out, so that the height of signal of the processor according to detected by the first external interrupt input, the second external interrupt input
Low level, the voltage to frequency of control processor output signal, so that it is guaranteed that the voltage of the output end of diode voltage-multiplying circuit tends to
It is stable.The device needed for HVB high voltage bias circuit in the present embodiment is simple resistance, electric capacity, diode, comparator, these
Device can carry out surface mount by automation equipment, without using the larger magnet coil of volume, greatly reducing liter
The volume of volt circuit, and manual welding is not needed, greatly reduce cost of labor；In addition, pass through voltage feedback circuit, voltage
The mutual control of comparator circuit and processor coordinates, and enters Mobile state tune automatically to the voltage of the output end of diode voltage-multiplying circuit
It is whole, the voltage stabilizing of the output end of diode voltage-multiplying circuit is realized, it does not need extra circuit debugging to work, and production efficiency is high, and
And cause electronic equipment stable performance at work.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of HVB high voltage bias circuit embodiments one provided by the invention；
Fig. 2 is the structural representation of HVB high voltage bias circuit embodiments two provided by the invention；
Fig. 3 is the structural representation of HVB high voltage bias circuit embodiments three provided by the invention；
Fig. 4 is the structural representation of HVB high voltage bias circuit embodiments four provided by the invention；
Reference：
10：Processor； 11：Diode voltage-multiplying circuit； 12：Voltage feedback circuit；
13：Voltage comparator circuit； 121：First resistor； 122：Second resistance；
131：First comparator； 132：Second comparator；
101：The output end of processor； 111：The input of diode voltage-multiplying circuit；
112：The output end of diode voltage-multiplying circuit； 1211：The first end of first resistor；
1212：Second end of first resistor； 1221：The first end of second resistance；
1222：Second end of second resistance； 102：First external interrupt input；
103：Second external interrupt input； 113：First order multiplication of voltage branch road；
14：Pulse width regulating circuit； 15：Inductive flyback circuit；
141：The input of pulse width regulating circuit； 142：The output end of pulse width regulating circuit；
151：The input of inductive flyback circuit； 152：The output end of inductive flyback circuit；
143：3rd resistor； 144：4th resistance； 145：First electric capacity；
1431：The first end of 3rd resistor； 1432：Second end of 3rd resistor；
1441：The first end of 4th resistance； 1442：Second end of the 4th resistance；
1451：The first end of first electric capacity； 1452：Second end of the first electric capacity；
16：Signal shaping integrated circuit； 161：The input of signal shaping integrated circuit；
162：The output end of signal shaping integrated circuit； 153：Flyback inductance；
1531：The first end of flyback inductance； 1532：Second end of flyback inductance；
17：Power supply.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
HVB high voltage bias circuit of the present invention goes for arbitrarily needing the electronic equipment of work under high pressure, should
Some devices for needing to be operated under tens volts to hundreds of volt voltages are frequently included in electronic equipment, for example, being operated in tens volts
The equipment such as the detector of the radioactive substance dosemeter under to hundreds of volt voltages, the detector of ray monitor.But common
Cell voltage in electronic equipment is 3V or so, in order that these device normal works of electronic equipment, it is necessary to which electronics is set
Standby cell voltage is boosted, in the prior art using transformer boost circuit, because the volume of transformer is larger, Wu Fashi
For in less electronic equipment.
HVB high voltage bias circuit provided by the present invention, it is intended to solve that the above-mentioned volume of booster circuit in the prior art is larger, nothing
Method is applied to the technical problem of less electronic equipment.
Technical scheme is described in detail with specifically embodiment below.These specific implementations below
Example can be combined with each other, and may be repeated no more for same or analogous concept or process in some embodiments.
Fig. 1 is the structural representation of HVB high voltage bias circuit embodiments one provided by the invention.The present embodiment is by that can enter
The device of row surface mount (SMT), the cell voltage of electronic equipment is boosted to required operating voltage, and ensures work electricity
The stabilization of pressure, without being boosted by large coil, substantially reduce the volume of booster circuit.As shown in figure 1, the high pressure
Biasing circuit includes processor 10, diode voltage-multiplying circuit 11, voltage feedback circuit 12 and voltage comparator circuit 13；The electricity
Pressure feedback circuit 12 includes first resistor 121 and second resistance 122, and the voltage comparator circuit 13 includes having the first thresholding
First comparator 131 (i.e. U6 in Fig. 1) and with the second thresholding the second comparator 132 (i.e. U7 in Fig. 1)；
The output end 101 (i.e. MCU CTRL ends in Fig. 1) of the processor 10 and the diode voltage-multiplying circuit 11
Input 111 connects, and the first end 1211 of the first resistor 121 is with removing afterbody times in the diode voltage-multiplying circuit 11
Any level multiplication of voltage branch road connection of branch road is pressed, the output end 112 of the diode voltage-multiplying circuit 11 exports bias voltage；Described
Second end 1212 of one resistance 121 respectively the first end 1221 with the second resistance 122, the first comparator 131 it is same
The inverting input connection of phase input, second comparator 132, the second end 1222 of the second resistance 122 is grounded；Institute
The output end (i.e. HL Stop in Fig. 1) for stating first comparator 131 connects the first external interrupt input of the processor 10
102, the output end (i.e. HL Start in Fig. 1) of second comparator 132 is connected in the second outside of the processor 10
Disconnected input 103.
Specifically, the processor 10 in the present embodiment can share one with the center processor of electronic equipment 10, should
Processor 10 can be any operative frequency, the processor 10 of any model, such as can be micro-control unit
(Microcontroller Unit, abbreviation MCU), single-chip microcomputer etc..Processor 10 in the present embodiment, is mainly used in diode
Voltage-multiplying circuit inputs a voltage signal so that and the voltage signal is carried out times several levels and amplified by diode voltage-multiplying circuit 11, meanwhile, should
Processor 10 is additionally operable to receive above-mentioned voltage comparator circuit 13 to be exported to processing according to the feedback voltage of voltage feedback circuit 12
The interrupt signal of device 10, processor 10 (export according to the frequency of the output signal of interrupt signal control processor 10 in i.e. one second
The number of signal), the height of the frequency of the signal output determines the voltage of the output end 112 of following diode voltage-multiplying circuits 11
(voltage of the output end 112 of diode voltage-multiplying circuit 11 be it is soaring step by step, processor in 10 1 seconds output signal it is more, its
The voltage of the output end 112 of diode voltage-multiplying circuit 11 is bigger).
Above-mentioned diode voltage-multiplying circuit 11 includes multistage multiplication of voltage branch road, and the voltage for processor 10 to be exported carries out multiple
Level boosting, so that by the output end 112 of diode voltage-multiplying circuit 11 by load of the voltage output after boosting to rear end, such as
Detect the detector of radioactive substance.It should be noted that diode voltage-multiplying circuit 11 output end 112 export voltage be with
What the power consumption loaded was changed, for example, exemplified by loading the detector for detection radioactive substance, when detector is in by force
When in radiation environment, the power consumption of load becomes big, it means that the output end 112 of diode voltage-multiplying circuit 11 will export more electricity
Stream, therefore, now the voltage of the output end 112 of diode voltage-multiplying circuit 11 just have dropped, then or, pass through diode times piezoelectricity
Voltage after road 11 is boosted is constantly in persistently soaring state, therefore, in order to ensure diode voltage-multiplying circuit 11 exports stabilization
Voltage, the present embodiment sets a voltage feedback circuit 12 on any level multiplication of voltage branch road of diode voltage-multiplying circuit 11.Due to
Diode has certain reverse leakage properties of flow, any level being located in diode voltage-multiplying circuit 11 before afterbody voltage
Voltage and afterbody voltage into fixed ratio, therefore according to be located in diode voltage-multiplying circuit 11 afterbody voltage it
The feedback voltage of preceding any level, so that it may voltage (the i.e. output end 112 of diode voltage-multiplying circuit 11 of afterbody is calculated
Voltage), i.e., by diode voltage-multiplying circuit 11 be located at afterbody voltage before any level feedback voltage change
Trend can be obtained by the variation tendency of the voltage of the output end 112 of diode voltage-multiplying circuit 11, therefore, can be by Voltage Feedback
Circuit 12 is arranged on any level multiplication of voltage branch road that afterbody multiplication of voltage branch road is removed in diode voltage-multiplying circuit 11, and voltage is anti-
The output end of current feed circuit 12 and the voltage comparator circuit 13 of rear end connect, and are provided for the voltage comparator circuit 13 of rear end
Feedback voltage.Here why voltage feedback circuit 12 is arranged in diode voltage-multiplying circuit 11 and removes afterbody multiplication of voltage branch road
Any level multiplication of voltage branch road on, and the output end of voltage feedback circuit 12 and voltage comparator circuit 13 are attached, be because
For diode voltage-multiplying circuit 11 output end 112 export voltage be hundreds of volts to upper kilovolt, be unsatisfactory for voltage comparator
The input voltage requirement of circuit 13, easily burns voltage comparator circuit 13, and if voltage feedback circuit 12 is set
If the output end 112 of diode voltage-multiplying circuit 11, even if reducing input voltage after voltage in the form of electric resistance partial pressure
Comparator circuit 13, if (i.e. last is over the ground for last resistor in several divider resistances in voltage feedback circuit 12
Resistance) failure welding or failure cause open circuit if, high pressure will be introduced directly into voltage comparator circuit 13, cause comparator
Burn；But voltage feedback circuit 12 is arranged on to any that afterbody multiplication of voltage branch road is removed in diode voltage-multiplying circuit 11
On level multiplication of voltage branch road, it will avoid the voltage of the output end of voltage feedback circuit 12 excessive, burn out the voltage comparator of rear end.
Above-mentioned voltage comparator circuit 13 includes first comparator 131 with the first thresholding and the with the second thresholding
Two comparators 132, wherein, first comparator 131 is high voltage trigger comparator, and the second comparator 132 is that low-voltage triggers ratio
Compared with device, i.e., the first above-mentioned thresholding is more than the second thresholding.When the feedback voltage that the output end of voltage feedback circuit 12 exports is higher than
During the first thresholding, show that the voltage of the output end 112 of current diode voltage-multiplying circuit 11 is excessive, now, first comparator 131
Output end exports high level, the output end output low level of the second comparator 132, so as to wake up processor 10, processor 10 this
When reduce processor 10 the output signal of output end 101 frequency, so as to reduce the output end 112 of diode voltage-multiplying circuit 11
Voltage；When the feedback voltage that the output end of voltage feedback circuit 12 exports is less than the second thresholding, show current diode multiplication of voltage
The voltage of the output end 112 of circuit 11 is too small, now, the output end output low level of first comparator 131, the second comparator
132 output end output high level, so as to wake up processor 10, the output end 101 that processor 10 now increases processor 10 is defeated
Go out the frequency of signal, so as to raise the voltage of the output end 112 of diode voltage-multiplying circuit 11.
That is, the voltage signal that the HVB high voltage bias circuit in the present embodiment is exported by processor 10, through diode
Voltage-multiplying circuit 11 carries out voltage multiplication level amplification so that the voltage of the output end 112 of diode voltage-multiplying circuit 11, which disclosure satisfy that, works as
Preceding need of work, and in boost process, in order to ensure the stabilization of the voltage of the output end 112 of diode voltage-multiplying circuit 11,
By by any level multiplication of voltage branch road in diode voltage-multiplying circuit 11 in addition to afterbody multiplication of voltage branch road and voltage feedback circuit 12
Connection so that the voltage that voltage comparator circuit 13 can export according to the voltage feedback circuit 12 controls first comparator 131
With the output of the second comparator 132 so that processor 10 is according to the first external interrupt input 102, the second external interrupt
The low and high level of signal detected by input 103, the frequency of the output signal of control processor 10, so that it is guaranteed that diode times
The voltage of the output end 112 of volt circuit 11 tends towards stability.The device needed for HVB high voltage bias circuit in the present embodiment is simple
Resistance, electric capacity, diode, comparator, these devices can carry out surface mount by automation equipment, it is not necessary to by hand
Welding, cost of labor is greatly reduced, and the body of booster circuit using the larger magnet coil of volume, need not be greatly reduced
Product；In addition, coordinated by the mutual control of voltage feedback circuit 12, voltage comparator circuit 13 and processor 10, to diode
The voltage of the output end 112 of voltage-multiplying circuit 11 enters Mobile state adjustment automatically, realizes the output end 112 of diode voltage-multiplying circuit 11
Voltage stabilizing, it does not need extra circuit debugging to work, and production efficiency is high, and causes electronic equipment stable performance at work.
HVB high voltage bias circuit provided by the invention, by by the input of the output end of processor and diode voltage-multiplying circuit
Connection, any level multiplication of voltage branch road company that afterbody multiplication of voltage branch road will be removed in the first end of first resistor and diode voltage-multiplying circuit
Connect, and by compared with the second end of the first resistor respectively first end with second resistance, the in-phase input end of first comparator, second
The inverting input connection of device, and the second end of second resistance is grounded, by the output end of first comparator and processor
First external interrupt input is connected, and the second external interrupt input of the output end of the second comparator and processor is connected,
So as to which the voltage that the output end of processor exports be boosted by diode voltage-multiplying circuit, and in boost process, pass through
Any level multiplication of voltage branch road in diode voltage-multiplying circuit in addition to afterbody multiplication of voltage branch road is connected with voltage feedback circuit so that
Voltage comparator circuit can be according to the defeated of the voltage control first comparator and the second comparator that the voltage feedback circuit exports
Go out, so that the height of signal of the processor according to detected by the first external interrupt input, the second external interrupt input
Low level, the voltage to frequency of control processor output signal, so that it is guaranteed that the voltage of the output end of diode voltage-multiplying circuit tends to
It is stable.The device needed for HVB high voltage bias circuit in the present embodiment is simple resistance, electric capacity, diode, comparator, these
Device can carry out surface mount by automation equipment, without using the larger magnet coil of volume, greatly reducing liter
The volume of volt circuit, and manual welding is not needed, greatly reduce cost of labor；In addition, pass through voltage feedback circuit, voltage
The mutual control of comparator circuit and processor coordinates, and enters Mobile state tune automatically to the voltage of the output end of diode voltage-multiplying circuit
It is whole, the voltage stabilizing of the output end of diode voltage-multiplying circuit is realized, it does not need extra circuit debugging to work, and production efficiency is high, and
And cause electronic equipment stable performance at work.
Optionally, the structural representation of HVB high voltage bias circuit embodiments two shown in Figure 2, above-mentioned first resistor 121
First end 1211 be connected with first order multiplication of voltage branch road 113 in diode voltage-multiplying circuit 11, so that voltage feedback circuit 12
Load capacity enhancing, so as to more ensure diode voltage-multiplying circuit 11 output end 112 voltage stability.
Fig. 3 is the structural representation of HVB high voltage bias circuit embodiments three provided by the invention.In above-mentioned embodiment illustrated in fig. 2
On the basis of, further, above-mentioned HVB high voltage bias circuit also includes pulse width regulating circuit 14 and inductive flyback circuit 15；
Wherein, the output end 101 of the processor 10 is connected with the input 141 of the pulse width regulating circuit 14, described
The output end 142 of pulse width regulating circuit 14 is connected with the input 151 of the inductive flyback circuit 15, the inductive flyback circuit
15 output end 152 connects the input 111 of the diode voltage-multiplying circuit 11.
Specifically, in order to reduce the power consumption of HVB high voltage bias circuit, therefore, to assure that the working frequency of processor 10 is as far as possible
Low (minimum pulse width that processor 10 can typically provide is a clock cycle), but if the working frequency of processor 10 compared with
Low, then its corresponding pulsewidth is with regard to bigger, and so as to the inductance that can make in inductive flyback circuit 15, ON time is long over the ground, power consumption
It is excessive；For example, if processor 10 is using 32768Hz crystal oscillators, its minimum pulse width exported is 30.5 microseconds.If with this
Pulsewidth directly controls inductive flyback circuit 15, and making inductance, ON time is long over the ground, and power consumption is excessive.Therefore, in order to reduce height
The power consumption of biasing circuit is pressed, the present embodiment adjusts the output end 101 of processor 10 and pulsewidth on the basis of shown in above-mentioned Fig. 2
The input 141 of whole circuit 14 is attached, and the output end 142 of pulse width regulating circuit 14 is connected with inductive flyback circuit 15
Connect, so that the pulse signal that the output end 101 of processor 10 exports is adjusted through pulse width regulating circuit 14, make its reduction
To the pulsewidth requirement for the control signal that disclosure satisfy that inductive flyback circuit 15, for example, above-mentioned processor 10 is exported
The pulsewidth of 30.5 microseconds, it shorten to 3 microseconds.So, processor 10 is not needed under work at higher frequencies, its it is available compared with
Low working frequency, coordinate pulse width regulating circuit 14, to control inductive flyback circuit 15 to work.Therefore, the power consumption of processor 10
It is greatly diminished, the power consumption of HVB high voltage bias circuit is also lowered by significantly.
It should be noted that the size of the above-mentioned pulsewidth after the adjustment of pulse width regulating circuit 14 is really inductive flyback electricity
The duration that inductance turns on over the ground in road 15, that is, the duration that the flyback voltage that goes out through inductive flyback is lasting, this flyback voltage
The voltage of the signal exported more than processor 10, output end 152 of the flyback voltage through inductive flyback circuit 15 are inputted to two poles
The input 111 of pipe voltage-multiplying circuit 11, so that the flyback voltage is amplified by diode voltage-multiplying circuit 11.Due to above-mentioned
Flyback voltage is more than the voltage for the signal that processor 10 exports, and therefore, the series of the diode voltage-multiplying circuit 11 needed for it is less,
Reduce the respective load of HVB high voltage bias circuit, also substantially increase boosting efficiency.
Optionally, above-mentioned pulse width regulating circuit 14 can be the arbitrary circuit with pulse-width adjustment function, and the present invention is right
The form of pulse width regulating circuit 14 does not limit, and optionally, above-mentioned inductive flyback circuit 15 can be any form of inductance
Circuit of reversed excitation 15, if its can flyback go out more than processor 10 export signal voltage.
The embodiment of the present application provide HVB high voltage bias circuit, by by the output end of processor by pulse width regulating circuit with
Inductive flyback circuit is connected so that processor can be operated under relatively low working frequency, greatly reduce HVB high voltage bias circuit
With the power consumption of processor；Further, since the flyback voltage that inductive flyback circuit flyback goes out is more than the electricity of the signal of processor output
Pressure, therefore, the series of the diode voltage-multiplying circuit needed for it is less, reduces the respective load of HVB high voltage bias circuit, also significantly
Improve boosting efficiency.
Fig. 4 is the structural representation of HVB high voltage bias circuit embodiments four provided by the invention.In above-mentioned embodiment illustrated in fig. 3
On the basis of, further, as shown in figure 4, above-mentioned pulse width regulating circuit 14 includes 3rd resistor 143, the 4th resistance 144, the
One electric capacity 145 and P-channel metal-oxide-semiconductor field-effect PMOS；Wherein, the output end 101 of the processor 10 is distinguished
The source electrode of first end 1431, the PMOS with the 3rd resistor 143 is connected, the second end of the 3rd resistor 143
1432 respectively the first end 1451 with first electric capacity 145, the grid of the PMOS be connected, first electric capacity 145
Second end 1452 is grounded, the drain input 151 with the inductive flyback circuit 15, the 4th electricity respectively of the PMOS
The first end 1441 of resistance 144 is connected, and the second end 1442 of the 4th resistance 144 is grounded.
Above-mentioned inductive flyback circuit 15 includes flyback inductance 153 and N-channel metal oxide semiconductor field-effect NMOS tube；
The output end 162 of the signal shaping integrated circuit 16 is connected with the grid of the NMOS tube, the source ground of the NMOS tube, institute
State the first end 1531 with the flyback inductance 153, the input of the diode voltage-multiplying circuit 11 respectively of draining of NMOS tube
111 connections, the second end 1532 of the flyback inductance 153 is connected with power supply 17.
Specifically, the course of work of the pulse width regulating circuit 14 is as follows：The output end 101 of processor 10 export a pulsewidth compared with
Wide square-wave signal (assuming that the working frequency of the processor 10 is the 32768Hz in previous example), the pulsewidth are 30.5 microseconds,
That is the signal for the high level that processor 10 exports can continue 30.5 microseconds.When the output of processor 10 is high level,
The high level charges through 3rd resistor 143 (i.e. R21 in Fig. 4) to the first electric capacity 145 (C21 i.e. in figure), now, the 3rd electricity
Voltage between second end 1432 of resistance 143 and the first end 1451 of the first electric capacity 145 is low-voltage (almost nil), then now
The grid of PMOS (i.e. Q1 in Fig. 4) is low level, and PMOS conducting, the voltage of the output end 101 of processor 10 is through PMOS
The source electrode of pipe reaches the drain electrode of PMOS, and now the drain voltage of PMOS is the output of high level, i.e. pulse width regulating circuit 14
The output of end 142 is high level.Further, since above-mentioned first electric capacity 145 only need the less time with regard to it is fully charged (charging interval by
The capacitance characteristic of first electric capacity 145 determines, it is assumed that its 3 microsecond is just full of), when the first electric capacity 145 is full of, the grid of PMOS
For high level, PMOS shut-off, above-mentioned 4th resistance 144 is by the voltage pull-down of the drain electrode of current PMOS so that PMOS
Drain electrode exports low level voltage, i.e. the output of output end 142 of pulse width regulating circuit 14 is low level.That is, above-mentioned arteries and veins
Its high level of the signal of the wide output of adjustment circuit 14 continue for 3 microseconds and just be changed into low level, i.e. pulse width regulating circuit 14 exports
Signal pulsewidth is 3 microseconds, is 3 so as to which the voltage signal that the pulsewidth that above-mentioned processor 10 exports is 30.5 microseconds is adjusted into pulsewidth
The voltage signal of microsecond, so that when the inductance in the inductive flyback circuit 15 being connected with pulse width regulating circuit 14 turns on over the ground
Between only continue 3 microseconds, greatly reduce the power consumption of booster circuit.The pulsewidth of signal after the pulse width regulating circuit 14 adjustment is big
Small, depending on the charging interval of above-mentioned first electric capacity 145, the charging interval is shorter, and the signal pulsewidth after adjustment is smaller, the charging
Time is longer, and the signal pulsewidth after adjustment is bigger, the selection of first torch, is determined according to actually required pulsewidth.
Optionally, above-mentioned HVB high voltage bias circuit can also include signal shaping integrated circuit 16；The drain electrode of the PMOS
The input 161 of the signal shaping integrated circuit 16 connects, the output end 162 of the signal shaping integrated circuit 16 with it is described
The input 151 of inductive flyback circuit 15 connects.The signal shaping integrated circuit 16 can be defeated by above-mentioned pulse width regulating circuit 14
Signal after the pulse-width adjustment gone out carries out waveform shaping, obtains the square-wave signal of standard, so that inductive flyback circuit 15
To being accurately controlled.
When the signal that the output end 162 of signal shaping integrated circuit 16 exports is high level signal, NMOS tube (i.e. Fig. 4
In Q2) conducting, then flyback inductance 153 (i.e. L1 in Fig. 4) turns on over the ground, so that the upper end flyback of drain electrode in NMOS tube goes out
One voltage, the flyback voltage are exported to the input 111 of diode voltage-multiplying circuit 11, through 11 times of several levels of diode voltage-multiplying circuit
Amplify and export；In addition, in boost process, by the way that first order multiplication of voltage branch road 113 will be connected in diode voltage-multiplying circuit 11
On so that voltage feedback circuit 12 exports feedback voltage to voltage comparator circuit 13；When voltage feedback circuit 12 export it is anti-
When feedthrough voltage is higher than the first thresholding, show that the voltage of the output end 112 of current diode voltage-multiplying circuit 11 is excessive, now, first
The output end output high level of comparator 131, the output end output low level of the second comparator 132, so as to wake up processor 10,
Processor 10 now reduces the frequency (number of output signal in reducing by one second) of the output signal of processor 10, so as to reduce electricity
Feel the working frequency (number of flyback in i.e. one second) of circuit of reversed excitation 15, and then reduce the output end of diode voltage-multiplying circuit 11
112 voltage；When the feedback voltage that voltage feedback circuit 12 exports is less than the second thresholding, show current diode voltage-multiplying circuit
The voltage of 11 output end 112 is too small, now, the output end output low level of first comparator 131, the second comparator 132
Output end exports high level, and so as to wake up processor 10, processor 10 now increases the frequency of the output signal of processor 10, so as to
The working frequency of inductive flyback circuit 15 is increased, and then increases the voltage of the output end 112 of diode voltage-multiplying circuit 11, so as to really
The voltage for protecting the output end 112 of diode voltage-multiplying circuit 11 tends towards stability.In addition, in the present embodiment, processor 10 is above-mentioned height
Press processor 10, i.e. equipment belonging to the HVB high voltage bias circuit and HVB high voltage bias circuit used in the equipment belonging to biasing circuit
A processor 10 can be shared, it greatly reduces the cost of whole HVB high voltage bias circuit.
HVB high voltage bias circuit provided by the invention, pass through the connection of 3rd resistor, the 4th resistance, the first electric capacity and PMOS
Pulse width regulating circuit is formed, the pulse width regulating circuit can be rapidly effectively by the pulse-width adjustment of the voltage signal of processor output
Required pulsewidth afterwards, its is simple in construction, pulse-width adjustment efficiency high, and it is inclined to substantially reduce high pressure by the pulse width regulating circuit
The power consumption of circuits；In addition, the letter after the pulse-width adjustment exported above-mentioned pulse width regulating circuit by signal shaping integrated circuit
Number carry out waveform shaping, the square-wave signal of standard is obtained, so that inductive flyback circuit is precisely controlled.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (6)
- A kind of 1. HVB high voltage bias circuit, it is characterised in that including：Processor, diode voltage-multiplying circuit, voltage feedback circuit and electricity Press comparator circuit；The voltage feedback circuit includes first resistor and second resistance, and the voltage comparator circuit includes tool There are the first comparator of the first thresholding and the second comparator with the second thresholding；The output end of the processor is connected with the input of the diode voltage-multiplying circuit, the diode voltage-multiplying circuit it is defeated Go out end output bias voltage；Second end of the first resistor respectively the first end with the second resistance, compared with described first The inverting input connection of the in-phase input end of device, second comparator, the second end ground connection of the second resistance；Described The output end of one comparator connects the first external interrupt input of the processor, the output end connection of second comparator Second external interrupt input of the processor；The first end of the first resistor is connected with first order multiplication of voltage branch road in the diode voltage-multiplying circuit；The first order multiplication of voltage branch road includes：3rd electric capacity, the second electric capacity, the first diode and the second diode；The processing The output end of device electrically connects with the positive pole of first diode and the first end of the 3rd electric capacity respectively；First diode Negative pole and the positive pole of second diode, the first end of the second electric capacity, the of the first resistor of the voltage feedback circuit The first input end of one end and second level multiplication of voltage branch road electrically connects；The second end ground connection of second electric capacity；Described 2nd 2 The negative pole of pole pipe electrically connects with the second end of the 3rd electric capacity and the second input of the second level multiplication of voltage branch road respectively；The processor is used for output voltage signal.
- 2. HVB high voltage bias circuit according to claim 1, it is characterised in that the HVB high voltage bias circuit also includes pulsewidth and adjusted Whole circuit and inductive flyback circuit；Wherein, the output end of the processor is connected with the input of the pulse width regulating circuit, the pulse width regulating circuit Output end is connected with the input of the inductive flyback circuit, and the output end of the inductive flyback circuit connects the diode times The input of volt circuit.
- 3. HVB high voltage bias circuit according to claim 2, it is characterised in that the pulse width regulating circuit includes the 3rd electricity Resistance, the 4th resistance, the first electric capacity and P-channel metal-oxide-semiconductor field-effect PMOS；Wherein, the first end with the 3rd resistor, the source electrode of the PMOS are connected the output end of the processor respectively, institute Stating the second end of 3rd resistor, the first end with first electric capacity, the grid of the PMOS are connected respectively, first electricity The the second end ground connection held, the drain electrode of the PMOS input with the inductive flyback circuit, the 4th resistance respectively First end connects, the second end ground connection of the 4th resistance.
- 4. HVB high voltage bias circuit according to claim 3, it is characterised in that it is whole that the HVB high voltage bias circuit also includes signal Shape integrated circuit；The input connection of the drain electrode signal shaping integrated circuit of the PMOS, the signal shaping integrated circuit it is defeated Go out end to be connected with the input of the inductive flyback circuit.
- 5. HVB high voltage bias circuit according to claim 4, it is characterised in that the inductive flyback circuit includes flyback inductance With N-channel metal oxide semiconductor field-effect NMOS tube；The output end of the signal shaping integrated circuit is connected with the grid of the NMOS tube, the source ground of the NMOS tube, The first end with the flyback inductance, the input of the diode voltage-multiplying circuit are connected respectively for the drain electrode of the NMOS tube, institute The second end for stating flyback inductance is connected with power supply.
- 6. according to the HVB high voltage bias circuit described in claim any one of 1-5, it is characterised in that the processor is the high pressure Processor used in equipment belonging to biasing circuit.
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| CN201610543513.6A CN106020309B (en) | 2016-07-11 | 2016-07-11 | HVB high voltage bias circuit |
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| US7391190B1 (en) * | 2006-04-03 | 2008-06-24 | National Semiconductor Corporation | Apparatus and method for three-phase buck-boost regulation |
| CN101154885A (en) * | 2006-09-29 | 2008-04-02 | 台湾类比科技股份有限公司 | Width pulse modulation booster system and its starting method |
| CN101562922A (en) * | 2009-05-31 | 2009-10-21 | 南京航空航天大学 | High brightness LED driving power without electrolytic capacitor |
| US9252660B2 (en) * | 2012-09-28 | 2016-02-02 | Analog Devices, Inc. | System and method for generating a regulated boosted voltage using a controlled variable number of charge pump circuits |
| CN104216453B (en) * | 2013-07-11 | 2016-03-16 | 马鞍山恒瑞测量设备有限公司 | Small area analysis high precision variable High voltage output device |
| CN205179327U (en) * | 2015-10-23 | 2016-04-20 | 广州丹盾电子有限公司 | Take power protection's digital audio amplifier |
| CN205920434U (en) * | 2016-07-11 | 2017-02-01 | 孟令冬 | High pressure bias circuit |
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