CN105993128B - 电流高效的低噪声放大器(lna) - Google Patents
电流高效的低噪声放大器(lna) Download PDFInfo
- Publication number
- CN105993128B CN105993128B CN201580007887.XA CN201580007887A CN105993128B CN 105993128 B CN105993128 B CN 105993128B CN 201580007887 A CN201580007887 A CN 201580007887A CN 105993128 B CN105993128 B CN 105993128B
- Authority
- CN
- China
- Prior art keywords
- amplifier stage
- signal
- amplifier
- stage
- lna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003321 amplification Effects 0.000 claims abstract description 35
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 35
- 238000004891 communication Methods 0.000 claims description 41
- 239000003990 capacitor Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 13
- 238000006116 polymerization reaction Methods 0.000 claims description 10
- 238000004220 aggregation Methods 0.000 claims 2
- 230000002776 aggregation Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 16
- 238000012545 processing Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000000586 desensitisation Methods 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000007850 degeneration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- WYROLENTHWJFLR-ACLDMZEESA-N queuine Chemical compound C1=2C(=O)NC(N)=NC=2NC=C1CN[C@H]1C=C[C@H](O)[C@@H]1O WYROLENTHWJFLR-ACLDMZEESA-N 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W52/00—Power management, e.g. Transmission Power Control [TPC] or power classes
- H04W52/02—Power saving arrangements
- H04W52/0209—Power saving arrangements in terminal devices
- H04W52/0261—Power saving arrangements in terminal devices managing power supply demand, e.g. depending on battery level
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04W—WIRELESS COMMUNICATION NETWORKS
- H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
- H04W88/02—Terminal devices
- H04W88/06—Terminal devices adapted for operation in multiple networks or having at least two operational modes, e.g. multi-mode terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/180,434 | 2014-02-14 | ||
US14/180,434 US9271239B2 (en) | 2014-02-14 | 2014-02-14 | Current-efficient low noise amplifier (LNA) |
PCT/US2015/015518 WO2015123368A1 (en) | 2014-02-14 | 2015-02-12 | Current-efficient low noise amplifier (lna) |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105993128A CN105993128A (zh) | 2016-10-05 |
CN105993128B true CN105993128B (zh) | 2019-01-18 |
Family
ID=52595455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580007887.XA Active CN105993128B (zh) | 2014-02-14 | 2015-02-12 | 电流高效的低噪声放大器(lna) |
Country Status (7)
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102196752B1 (ko) * | 2014-08-12 | 2020-12-30 | 삼성전자주식회사 | 캐리어 통합 신호를 송수신하는 장치 |
US9431963B2 (en) | 2014-09-19 | 2016-08-30 | Qualcomm Incorporated | Dual stage low noise amplifier for multiband receiver |
US20170187338A1 (en) * | 2015-12-23 | 2017-06-29 | Qualcomm Incorporated | Amplifier with coupled inductors |
US10177722B2 (en) | 2016-01-12 | 2019-01-08 | Qualcomm Incorporated | Carrier aggregation low-noise amplifier with tunable integrated power splitter |
JP6853361B2 (ja) * | 2016-08-30 | 2021-03-31 | スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. | プログラム可能位相利得段を有する低雑音増幅器 |
US10230417B2 (en) * | 2016-08-31 | 2019-03-12 | Skyworks Solutions, Inc. | Multi-input amplifier with degeneration switching block and low loss bypass function |
US9800273B1 (en) * | 2017-03-01 | 2017-10-24 | Qualcomm Incorporated | Wideband high linearity LNA with intra-band carrier aggregation support |
US10772052B2 (en) * | 2017-06-16 | 2020-09-08 | Qualcomm Incorporated | Controlling coexistent radio systems in a wireless device |
US20200099342A1 (en) * | 2018-09-20 | 2020-03-26 | Qualcomm Incorporated | Multi-mode hybrid radio frequency (rf) power amplifier with driver amplifier bypass |
TWI733166B (zh) | 2019-08-16 | 2021-07-11 | 瑞昱半導體股份有限公司 | 無線收發裝置 |
CN110677167B (zh) * | 2019-09-30 | 2021-08-24 | 上海华虹宏力半导体制造有限公司 | 低电压射频前端结构 |
JP7358316B2 (ja) | 2020-09-17 | 2023-10-10 | 株式会社東芝 | 半導体回路 |
US11728838B2 (en) | 2021-09-21 | 2023-08-15 | Qualcomm Incorporated | Isolating down-conversion mixer for a radio frequency (RF) transceiver |
US20230275597A1 (en) * | 2021-11-08 | 2023-08-31 | Ambiq Micro, Inc. | Low power and wide dynamic range analog-to-digital converter |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008112789A2 (en) * | 2007-03-13 | 2008-09-18 | Qualcomm Incorporated | Active circuits with isolation switches |
US20080258817A1 (en) * | 2007-04-17 | 2008-10-23 | Reddot Wireless Inc. | Hybrid concurrent and switched dual-band low noise amplifier |
CN102105994A (zh) * | 2008-05-26 | 2011-06-22 | 株式会社Npc | 太阳电池输出特性评价装置及太阳电池输出特性评价方法 |
US20130043946A1 (en) * | 2011-08-16 | 2013-02-21 | Qualcomm Incorporated | Low noise amplifiers with combined outputs |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107878A (en) | 1998-08-06 | 2000-08-22 | Qualcomm Incorporated | Automatic gain control circuit for controlling multiple variable gain amplifier stages while estimating received signal power |
US6586993B2 (en) | 2000-11-08 | 2003-07-01 | Research In Motion Limited | Impedance matching low noise amplifier having a bypass switch |
US6838933B2 (en) | 2002-10-02 | 2005-01-04 | Northrop Grumman Corporation | Low noise amplifier with fixed loss bypass |
US7110742B2 (en) * | 2004-03-16 | 2006-09-19 | Broadcom Corporation | Low noise amplifier with constant input impedance |
US7167044B2 (en) | 2004-05-10 | 2007-01-23 | University Of Florida Research Foundation, Inc. | Dual-band CMOS front-end with two gain modes |
US8121564B2 (en) * | 2006-03-06 | 2012-02-21 | Broadcom Corporation | Radio receiver with shared low noise amplifier for multi-standard operation in a single antenna system with loft isolation and flexible gain control |
US7696828B2 (en) * | 2008-01-04 | 2010-04-13 | Qualcomm, Incorporated | Multi-linearity mode LNA having a deboost current path |
JP2009260405A (ja) * | 2008-04-11 | 2009-11-05 | New Japan Radio Co Ltd | 低雑音増幅器 |
JP2011066825A (ja) | 2009-09-18 | 2011-03-31 | Toshiba Corp | 増幅器および通信装置 |
KR101703863B1 (ko) | 2010-03-17 | 2017-02-07 | 엘지전자 주식회사 | 반송파 집성을 위한 릴레이 rf의 구조 및 방법 |
EP2387159A1 (en) * | 2010-05-12 | 2011-11-16 | Imec | Reconfigurable receiver architectures |
JP5769977B2 (ja) * | 2011-01-20 | 2015-08-26 | Dxアンテナ株式会社 | 共同受信システム用増幅器 |
GB201119888D0 (en) | 2011-11-17 | 2011-12-28 | Renesas Mobile Corp | Methods of receiving and receivers |
US9154356B2 (en) * | 2012-05-25 | 2015-10-06 | Qualcomm Incorporated | Low noise amplifiers for carrier aggregation |
US20140015607A1 (en) | 2012-07-10 | 2014-01-16 | Mstar Semiconductor, Inc. | Low noise amplifiers for multiple radio standards |
-
2014
- 2014-02-14 US US14/180,434 patent/US9271239B2/en active Active
-
2015
- 2015-02-12 CN CN201580007887.XA patent/CN105993128B/zh active Active
- 2015-02-12 WO PCT/US2015/015518 patent/WO2015123368A1/en active Application Filing
- 2015-02-12 KR KR1020167024800A patent/KR20160122191A/ko not_active Application Discontinuation
- 2015-02-12 JP JP2016551310A patent/JP6509888B2/ja active Active
- 2015-02-12 EP EP15706999.8A patent/EP3105851B1/en active Active
- 2015-02-12 BR BR112016018578-1A patent/BR112016018578B1/pt active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008112789A2 (en) * | 2007-03-13 | 2008-09-18 | Qualcomm Incorporated | Active circuits with isolation switches |
US20080258817A1 (en) * | 2007-04-17 | 2008-10-23 | Reddot Wireless Inc. | Hybrid concurrent and switched dual-band low noise amplifier |
CN102105994A (zh) * | 2008-05-26 | 2011-06-22 | 株式会社Npc | 太阳电池输出特性评价装置及太阳电池输出特性评价方法 |
US20130043946A1 (en) * | 2011-08-16 | 2013-02-21 | Qualcomm Incorporated | Low noise amplifiers with combined outputs |
Also Published As
Publication number | Publication date |
---|---|
BR112016018578B1 (pt) | 2022-11-08 |
CN105993128A (zh) | 2016-10-05 |
BR112016018578A2 (US07935481-20110503-C00024.png) | 2017-08-08 |
US9271239B2 (en) | 2016-02-23 |
EP3105851A1 (en) | 2016-12-21 |
JP2017506043A (ja) | 2017-02-23 |
WO2015123368A1 (en) | 2015-08-20 |
JP6509888B2 (ja) | 2019-05-08 |
KR20160122191A (ko) | 2016-10-21 |
US20150237583A1 (en) | 2015-08-20 |
EP3105851B1 (en) | 2018-04-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105993128B (zh) | 电流高效的低噪声放大器(lna) | |
US9374043B2 (en) | Dual stage carrier-aggregation (CA) low noise amplifier (LNA) having harmonic rejection and high linearity | |
CN105830349B (zh) | 可重配置的载波聚合接收器 | |
CN105830341B (zh) | 用于低噪声放大器(lna)非线性二阶产物的失真抵消 | |
US9479131B2 (en) | Carrier aggregation amplifier with dual gain control | |
CN106105027B (zh) | 用于载波聚合放大器的杂散信号的减轻 | |
CN106464278B (zh) | 电子设备及用于处理信号的方法 | |
US20200099342A1 (en) | Multi-mode hybrid radio frequency (rf) power amplifier with driver amplifier bypass | |
EP3982536A1 (en) | Bias arrangements with linearization transistors sensing rf signals and providing bias signals at different terminals | |
US9467196B2 (en) | Quadrature current-combining linearizing circuit for generating arbitrary phase and amplitude | |
CN218514356U (zh) | 功率放大器pa | |
US10340860B1 (en) | Multi-mode low noise amplifier | |
WO2015108892A1 (en) | Area-efficient degenerative inductance for a low noise amplifier (lna) | |
US20220109405A1 (en) | Distributed active power combining amplifier | |
US20230275334A1 (en) | Frequency selective coupler |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |