CN105990133A - Method for preventing diffusion of dopant of doped wafer in high-temperature technological process - Google Patents
Method for preventing diffusion of dopant of doped wafer in high-temperature technological process Download PDFInfo
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- CN105990133A CN105990133A CN201510095194.2A CN201510095194A CN105990133A CN 105990133 A CN105990133 A CN 105990133A CN 201510095194 A CN201510095194 A CN 201510095194A CN 105990133 A CN105990133 A CN 105990133A
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- processing procedure
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- technology processing
- temperature technology
- oxide layer
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- 238000000034 method Methods 0.000 title claims abstract description 106
- 238000009792 diffusion process Methods 0.000 title claims abstract description 22
- 230000008569 process Effects 0.000 title abstract description 15
- 239000002019 doping agent Substances 0.000 title abstract 6
- 239000000956 alloy Substances 0.000 claims description 43
- 229910045601 alloy Inorganic materials 0.000 claims description 43
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 22
- 238000007669 thermal treatment Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 84
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 230000003213 activating effect Effects 0.000 abstract 1
- 238000012864 cross contamination Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000003708 ampul Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011068 loading method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a method for preventing diffusion of a dopant of a doped wafer in a high-temperature technological process. The method comprises the steps of: covering an oxidation layer on the doped wafer, performing a rapid heat treatment such that part of the dopant in the doped wafer diffuses into the oxidation layer, removing the oxidation layer and conducting the high-temperature technological process. Therefore, the dopant in the doped wafer is prevented from diffusing into a furnace tube to contaminate other wafers during the high-temperature technological process, the problem of cross contamination of the wafers is avoided, the efficiency of the high-temperature technological process is increased, repeated high-temperature technological processes of a block control sheet after the batch of the high-temperature technological process with the dopant are avoided, the normal operation time of the furnace tube is prolonged, the production cost is reduced, and the execution of the rapid heat treatment plays a role in activating the dopant in the doped wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, be specifically related to one and prevent doping wafer in high-temperature technology processing procedure
The method of alloy diffusion.
Background technology
High-temperature technology processing procedure plays very important effect in semiconductor fabrication, including growth grid oxygen,
Thermal annealing, activation is injected ion, is repaired lattice damage etc..These processing procedures are often the work of long-time high temperature
Sequence, and temperature is higher than 800 DEG C, typically carries out in boiler tube, the injection in wafer in high-temperature technology processing procedure
Element diffuses out in high-temperature atmosphere and can pollute the quartz ampoule loading wafer, and whole boiler tube cavity, leads
Cause to pollute other wafers.
Existing processing method is that crystal column surface has the product of doping and other products are divided into different as far as possible
Batch carries out high-temperature technology processing procedure, to reduce the pollution of alloy diffusion, and criticizes at the processing procedure having alloy
Repeatedly keep off the processing procedure of control wafer after taking second place, diffuse out the pollution for quartz ampoule to reduce alloy.But
It is that such processing mode can have a strong impact on the life-span of the quartz ampoule loading wafer and the process efficiency of fab
Therefore, need badly a kind of alloy diffusion in wafer that is possible to prevent in high-temperature technology processing procedure to adulterate is provided
Method.
Content of the invention
It is an object of the invention to provide a kind of side preventing doping wafer alloy diffusion in high-temperature technology processing procedure
Method, solves the problem that wafer mutually pollutes in high-temperature technology processing procedure, it is to avoid criticize at the processing procedure having alloy
Repeatedly keep off the processing procedure of control wafer after taking second place, add the uptime of boiler tube.
For achieving the above object, the present invention provides one to prevent wafer alloy expansion of adulterating in high-temperature technology processing procedure
The method dissipating: include:
Doping wafer covers oxide layer；
Carry out rapid thermal treatment；
Etching removes the oxide layer on described doping wafer；
Carry out high-temperature technology processing procedure；Wherein, the temperature of described high-temperature technology processing procedure is higher than 800 DEG C.
Optionally, described oxide layer is silicon rich oxide layer.
Optionally, the method using chemical gaseous phase deposition forms described silicon rich oxide layer.
Optionally, the thickness of described silicon rich oxide layer is
Optionally, the temperature of described rapid thermal treatment is 700 DEG C～1500 DEG C.
Optionally, the time of described rapid thermal treatment is 10s～60s.
Optionally, wet etching is used to remove the oxide layer on described doping wafer.
Optionally, hydrofluoric acid solution is used to carry out wet etching.
Optionally, the mass percent of the hydrofluoric acid in described hydrofluoric acid solution is 1%～10%.
Compared with prior art, what the present invention provided prevents wafer alloy diffusion of adulterating in high-temperature technology processing procedure
Method, first on doping wafer, cover layer of oxide layer, then carry out rapid thermal treatment so that doping crystalline substance
Part alloy in circle diffuses in oxide layer, goes removing oxide layer to carry out high-temperature technology processing procedure more afterwards, from
And avoid the alloy adulterating in wafer in high-temperature technology processing procedure to diffuse to boiler tube pollutes remaining wafer,
Avoid the problem that wafer mutually pollutes, improve the efficiency of high temperature process technique, and avoid and mix having
Repeatedly keep off the high-temperature technology processing procedure of control wafer after the high-temperature technology process batch of foreign material, add boiler tube
Uptime, reduce production cost；Meanwhile, carry out rapid thermal treatment and also play activation doping crystalline substance
The effect of alloy in circle.
Brief description
Fig. 1 is prevented, by what one embodiment of the invention provided, wafer alloy diffusion of adulterating in high-temperature technology processing procedure
Method flow diagram.
Fig. 2～3 are prevented, by what one embodiment of the invention provided, wafer alloy expansion of adulterating in high-temperature technology processing procedure
The each step structural representation dissipating.
Fig. 4～5 carry out alloy before and after rapid thermal treatment by the doping wafer that one embodiment of the invention is provided
Schematic diagram.
Detailed description of the invention
For making present disclosure more clear understandable, below in conjunction with Figure of description, to present disclosure
It is described further.Certainly the invention is not limited in this specific embodiment, those skilled in the art institute is ripe
The general replacement known is also covered by within the scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, when describing present example in detail, in order to
Being easy to explanation, schematic diagram, should be to this as the restriction of the present invention not according to general ratio partial enlargement.
The core concept of the present invention is, first covers layer of oxide layer on doping wafer, then carries out quick
Heat treatment so that the part alloy in doping wafer diffuses in oxide layer, goes removing oxide layer to enter afterwards again
Row high-temperature technology processing procedure, thus avoid the alloy adulterating in wafer in high-temperature technology processing procedure to diffuse to boiler tube
Middle remaining wafer of pollution, it is to avoid the problem that wafer mutually pollutes, improves the efficiency of high temperature process technique,
And avoid the high-temperature technology system repeatedly keeping off control wafer after the high-temperature technology process batch having alloy
Journey, adds the uptime of boiler tube, reduces production cost；Meanwhile, rapid thermal treatment is carried out also
Serve the effect of alloy in activation doping wafer.
Fig. 1 is prevented, by what one embodiment of the invention provided, wafer alloy diffusion of adulterating in high-temperature technology processing procedure
Method flow diagram, as it is shown in figure 1, the present invention propose one prevent in high-temperature technology processing procedure adulterate wafer mix
The method of foreign material diffusion, comprises the following steps:
Step S01: cover oxide layer on doping wafer；
Step S02: carry out rapid thermal treatment；
Step S03: etching removes the oxide layer on described doping wafer；
Step S04: carry out high-temperature technology processing procedure.
Fig. 2～3 are prevented, by what one embodiment of the invention provided, wafer alloy expansion of adulterating in high-temperature technology processing procedure
The each step structural representation dissipating, refer to shown in Fig. 1, and combines Fig. 2～Fig. 3, describes the present invention in detail
The method preventing doping wafer alloy diffusion in high-temperature technology processing procedure being provided:
In step S01, doping wafer 10 covers oxide layer 11, forms the structure shown in Fig. 2.
In the present embodiment, described doping wafer 10 is the wafer needing to carry out high-temperature technology processing procedure, described oxidation
Layer 11 is silicon rich oxide layer, uses the method for chemical gaseous phase deposition to be formed described on described doping wafer 10
Silicon rich oxide layer.It should be noted that the doping wafer 10 described in Fig. 2 can be to do some manufacturing process
Wafer, on doping wafer, for example form groove or form the structure such as grid.
The thickness of described silicon rich oxide layer isFor example Preferably
In step S02, rapid thermal treatment is carried out to the doping wafer 10 being coated with oxide layer 11；Described
The temperature of rapid thermal treatment is 700 DEG C～1500 DEG C, for example: 700 DEG C, 900 DEG C, 1100 DEG C, 1300 DEG C,
1500 DEG C, preferred temperature is 1100 DEG C；The time of described rapid thermal treatment is 10s～60s, for example: 10s,
20s, 30s, 40s, 50s, 60s, the preferred time is 30s；In other embodiments, it is also possible to covering
The doping wafer 10 having oxide layer 11 is annealed, at the temperature and time of described annealing and above-mentioned Rapid Thermal
The temperature and time scope of reason is identical.
Being coated with the doping wafer 10 of oxide layer 11 after rapid thermal treatment or annealing, adulterate wafer 10
In part alloy diffuse in oxide layer 11, and the oxidized layer of alloy 11 spreading captures, from
And seldom have alloy to diffuse to boiler tube from doping wafer 10 in follow-up high-temperature technology processing procedure, it is to avoid
The problem that wafer mutually pollutes, improves the efficiency of high temperature process technique, and avoids and having alloy
Repeatedly keep off the high-temperature technology processing procedure of control wafer after high-temperature technology process batch, add the normal fortune of boiler tube
The row time, reduce production cost；Meanwhile, carrying out is heat-treated or anneals also plays activation doping wafer 10
The effect of middle alloy.
Refer to shown in Fig. 4 and Fig. 5, the doping wafer that one embodiment of the invention is provided is carried out at Rapid Thermal
The schematic diagram of alloy before and after reason.In the present embodiment, preferred oxide layer 11 is silicon rich oxide layer, existing to mix
Illustrating containing as a example by Doping Phosphorus (P) in stray crystal circle 10: as shown in Figure 4, doping wafer 10 is carried out soon
Before speed heat treatment, doping wafer 10 contains Doping Phosphorus, and silicon rich oxide layer is led to oxygen atom by silicon atom
Cross chemical bond to combine；After treating that described doping wafer 10 carries out rapid thermal treatment with silicon rich oxide layer, as
Shown in Fig. 5, in described doping wafer, part Doping Phosphorus diffuses in described silicon rich oxide layer, with described Silicon-rich
Silicon atom in oxide layer combines so that the Doping Phosphorus in described doping wafer reduces, thus follow-up
In high-temperature technology processing procedure, from described doping wafer, the Doping Phosphorus that diffuses out reduces in a large number, it is to avoid Doping Phosphorus is dirty
Remaining wafer in dye boiler tube.
In step S03, etching removes the oxide layer 11 on described doping wafer 10, is formed as shown in Figure 3
Structure.
In the present embodiment, wet etching is used to remove the oxide layer 11 on described doping wafer 10, preferably wet
Method etches.Hydrofluoric acid solution is used to carry out wet etching, the quality hundred of the hydrofluoric acid in described hydrofluoric acid solution
Proportion by subtraction is 1%～10%, for example the 1%th, the 3%th, the 5%th, the 7%th, the 9%th, 10%, and the hydrofluoric acid in hydrofluoric acid solution
Mass percent be preferably 5%.And in order to remove described oxide layer 11 completely, can be to described doping crystalline substance
Circle 10 carries out over etching.
In step S04, high-temperature technology processing procedure is carried out to described doping wafer 10.In the present embodiment, to institute
State doping wafer 10 and carry out high-temperature technology processing procedure, described high-temperature technology processing procedure and described doping wafer 10 itself
Needing the high-temperature technology processing procedure carrying out identical, the temperature of described high-temperature technology processing procedure is higher than 800 DEG C.In the present invention
In only increase covering oxide layer, carry out rapid thermal treatment or annealing, etching goes removing oxide layer these three to walk
Suddenly.
By using the side preventing doping wafer alloy diffusion in high-temperature technology processing procedure provided by the present invention
Method, when carrying out high-temperature technology processing procedure, it is not necessary to distinguishes doping wafer and undoped p wafer, and is mixing
After the high-temperature technology processing procedure of stray crystal circle, without the high-temperature technology processing procedure repeatedly keeping off control wafer, thus
Improve the efficiency of high-temperature technology processing procedure to a certain extent, reduce the cost of high-temperature technology processing procedure；And
Cover layer of oxide layer on doping wafer, remove again after being heat-treated or annealing, have no effect on doping crystalline substance
The electrical parameter of circle.
In sum, what the present invention provided prevents the method that in high-temperature technology processing procedure, doping wafer alloy spreads,
First on doping wafer, cover layer of oxide layer, be then quickly heat-treated so that the portion in doping wafer
Divide alloy to diffuse in oxide layer, go removing oxide layer to carry out high-temperature technology processing procedure more afterwards, thus avoid
The alloy adulterating in wafer in high-temperature technology processing procedure diffuses to pollute remaining wafer in boiler tube, it is to avoid crystalline substance
The problem that circle mutually pollutes, improves the efficiency of high temperature process technique, and avoids and having the height of alloy
Repeatedly keep off the high-temperature technology processing procedure of control wafer after temperature manufacturing process batch, add the properly functioning of boiler tube
Time, reduce production cost；Meanwhile, carry out rapid thermal treatment and also play doping in activation doping wafer
The effect of thing.
Foregoing description is only the description to present pre-ferred embodiments, not any limit to the scope of the invention
Fixed, any change that the those of ordinary skill in field of the present invention does according to the disclosure above content, modification, all belong to
Protection domain in claims.
Claims (9)
1. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure, it is characterised in that bag
Include:
Doping wafer covers oxide layer；
Carry out rapid thermal treatment；
Etching removes the oxide layer on described doping wafer；
Carry out high-temperature technology processing procedure；
Wherein, the temperature of described high-temperature technology processing procedure is higher than 800 DEG C.
2. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 1,
It is characterized in that, described oxide layer is silicon rich oxide layer.
3. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 2,
It is characterized in that, use the method for chemical gaseous phase deposition to form described silicon rich oxide layer.
4. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 3,
It is characterized in that, the thickness of described silicon rich oxide layer is
5. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 1,
It is characterized in that, the temperature of described rapid thermal treatment is 700 DEG C～1500 DEG C.
6. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 1,
It is characterized in that, the time of described rapid thermal treatment is 10s～60s.
7. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 1,
It is characterized in that, use wet etching to remove the oxide layer on described doping wafer.
8. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 7,
It is characterized in that, use hydrofluoric acid solution to carry out wet etching.
9. the method preventing doping wafer alloy diffusion in high-temperature technology processing procedure as claimed in claim 8,
It is characterized in that, the mass percent of the hydrofluoric acid in described hydrofluoric acid solution is 1%～10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510095194.2A CN105990133A (en) | 2015-03-03 | 2015-03-03 | Method for preventing diffusion of dopant of doped wafer in high-temperature technological process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510095194.2A CN105990133A (en) | 2015-03-03 | 2015-03-03 | Method for preventing diffusion of dopant of doped wafer in high-temperature technological process |
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| Publication Number | Publication Date |
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| CN105990133A true CN105990133A (en) | 2016-10-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510095194.2A Pending CN105990133A (en) | 2015-03-03 | 2015-03-03 | Method for preventing diffusion of dopant of doped wafer in high-temperature technological process |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908838A (en) * | 2019-11-19 | 2021-06-04 | 长鑫存储技术有限公司 | Method for improving pollution of heat treatment chamber |
| CN113628959A (en) * | 2021-07-19 | 2021-11-09 | 华虹半导体(无锡)有限公司 | Groove filling method applied to power device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794503A (en) * | 1993-09-24 | 1995-04-07 | Sumitomo Metal Ind Ltd | Oxidizing method for silicon substrate |
| US20090250793A1 (en) * | 2008-04-08 | 2009-10-08 | Yuri Sokolov | Bpsg film deposition with undoped capping |
| CN102637581A (en) * | 2012-04-06 | 2012-08-15 | 上海华力微电子有限公司 | Method for preventing outgassing of boron doped layer |
| CN103489763A (en) * | 2013-09-29 | 2014-01-01 | 武汉新芯集成电路制造有限公司 | Method for preventing doping ions from outgassing in process of ion implantation |
-
2015
- 2015-03-03 CN CN201510095194.2A patent/CN105990133A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0794503A (en) * | 1993-09-24 | 1995-04-07 | Sumitomo Metal Ind Ltd | Oxidizing method for silicon substrate |
| US20090250793A1 (en) * | 2008-04-08 | 2009-10-08 | Yuri Sokolov | Bpsg film deposition with undoped capping |
| CN102637581A (en) * | 2012-04-06 | 2012-08-15 | 上海华力微电子有限公司 | Method for preventing outgassing of boron doped layer |
| CN103489763A (en) * | 2013-09-29 | 2014-01-01 | 武汉新芯集成电路制造有限公司 | Method for preventing doping ions from outgassing in process of ion implantation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112908838A (en) * | 2019-11-19 | 2021-06-04 | 长鑫存储技术有限公司 | Method for improving pollution of heat treatment chamber |
| CN113628959A (en) * | 2021-07-19 | 2021-11-09 | 华虹半导体(无锡)有限公司 | Groove filling method applied to power device |
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