CN103489763A - Method for preventing doping ions from outgassing in process of ion implantation - Google Patents
Method for preventing doping ions from outgassing in process of ion implantation Download PDFInfo
- Publication number
- CN103489763A CN103489763A CN201310459703.6A CN201310459703A CN103489763A CN 103489763 A CN103489763 A CN 103489763A CN 201310459703 A CN201310459703 A CN 201310459703A CN 103489763 A CN103489763 A CN 103489763A
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- Prior art keywords
- silicon substrate
- amorphous carbon
- carbon film
- ion implantation
- annealing
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- 238000000034 method Methods 0.000 title claims abstract description 43
- 230000008569 process Effects 0.000 title claims abstract description 19
- 238000005468 ion implantation Methods 0.000 title claims abstract description 14
- 150000002500 ions Chemical class 0.000 title abstract description 16
- 238000010943 off-gassing Methods 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 21
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 3
- 238000005200 wet scrubbing Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a method for preventing doping ions from outgassing in the process of ion implantation. The method comprises the following steps that firstly, doping ions are implanted on a silicon substrate, so that a doping silicon substrate is obtained; secondly, a layer of amorphous carbon film deposits on the surface of the doping silicon substrate; thirdly, annealing treatment is conducted on the doping silicon substrate obtained in the second step; fourthly, the amorphous carbon film on the surface of the doping silicon substrate is eliminated; fifthly, the doping silicon substrate is washed. The layer of amorphous carbon film deposits on the surface of the doping silicon substrate, and due to the fact that the amorphous carbon film is good in barrier property and stability, the amorphous carbon film can effectively prevent the doping ions from generating the outgassing phenomenon when the thermal annealing technology is conducted. Therefore, the phenomenon that due to the fact that no silicification metal stop layer is arranged in a doping area in the process of annealing, the outgassing phenomenon is caused is effectively avoided. Therefore, the resistance value and the electrical properties of the doping silicon substrate are guaranteed, and then the performance of a product is improved.
Description
Technical field
The present invention relates to a kind of method of Implantation, be specifically related to a kind of method of avoiding ion implantation doping ion outgas.
Background technology
Doping ion in silicon substrate is (as B, P), in the high-temperature annealing process process, the problem of outgas easily occurs, thereby affect the doping content in silicon substrate, thereby the resistance change that causes silicon substrate, what diffuse out mixes ion and can enter the zone that does not originally need doping simultaneously.Further raising along with to device performance, can cause the inefficacy of respective regions electric property, doping ion in the urgent need to address outgas in silicon substrate.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method of avoiding ion implantation doping ion outgas.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method of avoiding ion implantation doping ion outgas, comprise the following steps,
Step 1: inject and mix ion on silicon substrate, obtain mixing silicon substrate;
Step 2: at described surface of silicon deposit one deck amorphous carbon film that mixes;
Step 3: the silicon substrate that mixes through step 2 is carried out to annealing in process;
Step 4: remove the described amorphous carbon film that mixes surface of silicon;
Step 5: clean the described silicon substrate that mixes.
The invention has the beneficial effects as follows: mixing just face deposit one deck amorphous carbon film of silicon substrate, because amorphous carbon has excellent barrier and stability, therefore amorphous carbon film can effectively stop doping ion generation outgas phenomenon when carrying out thermal annealing, thereby can effectively avoid in annealing process doped region owing to not having the metal silicide blocking layer to cause the generation of outgas phenomenon, thereby guarantee resistance value and the electric property of the silicon substrate of doping, and then improve the performance of product.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the described thickness range mixing surface of silicon deposit one deck amorphous carbon film is 100A～10000A.
Further, describedly by plasma enhanced chemical vapor deposition method, realize mixing surface of silicon deposit one deck amorphous carbon film.
Further, the temperature range adopted in described plasma enhanced chemical vapor deposition method is 200 ℃～500 ℃.
Further, in described annealing in process process, will put into N with the silicon substrate that mixes of amorphous carbon film
2or carry out annealing in process in Ar or He, and annealing region is 700 ℃～1050 ℃, the annealing time scope is 5s～400s.
Further, the concrete employing of the amorphous carbon film of described removal surface of silicon is the plasma ashing process.
What further, the silicon substrate employing was mixed in described cleaning is wet scrubbing method.
The accompanying drawing explanation
Fig. 1 is a kind of flow chart of avoiding the method for ion implantation doping ion outgas of the present invention.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, at first inject on silicon substrate and mix ion, the zone that needs to mix in silicon substrate is carried out ion and is mixed, and obtains mixing silicon substrate; Then at described surface of silicon deposit one deck amorphous carbon film that mixes, utilize plasma enhanced chemical vapor deposition technique mixing the amorphous carbon film that on silicon chip substrate, deposit a layer thickness scope is 100A～10000A in 200 ℃～500 ℃ temperature ranges; Secondly annealing in process, in described annealing in process process, will put into N with the silicon substrate that mixes of amorphous carbon film
2or carry out annealing in process in Ar or He, and annealing region is 700 ℃～1050 ℃, the annealing time scope is 5s～400s; Again remove the amorphous carbon film that mixes surface of silicon, the using plasma ashing method is removed the amorphous carbon film of surface of silicon; Finally clean and mix silicon substrate, adopt wet scrubbing method to clean and mix silicon substrate.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. a method of avoiding ion implantation doping ion outgas is characterized in that: comprises the following steps,
Step 1: inject and mix ion on silicon substrate, obtain mixing silicon substrate;
Step 2: at described surface of silicon deposit one deck amorphous carbon film that mixes;
Step 3: the silicon substrate that mixes through step 2 is carried out to annealing in process;
Step 4: remove the described amorphous carbon film that mixes surface of silicon;
Step 5: clean the described silicon substrate that mixes.
2. a kind of method of avoiding ion implantation doping ion outgas according to claim 1, it is characterized in that: the described thickness range mixing surface of silicon deposit one deck amorphous carbon film is 100A～10000A.
3. a kind of method of avoiding ion implantation doping ion outgas according to claim 1 and 2 is characterized in that: describedly by plasma enhanced chemical vapor deposition method, realize mixing surface of silicon deposit one deck amorphous carbon film.
4. a kind of method of avoiding ion implantation doping ion outgas according to claim 3, it is characterized in that: the temperature range adopted in described plasma enhanced chemical vapor deposition method is 200 ℃～500 ℃.
5. a kind of method of avoiding ion implantation doping ion outgas according to claim 1 and 2, is characterized in that: in described annealing in process process, will put into N with the silicon substrate that mixes of amorphous carbon film
2or carry out annealing in process in Ar or He, and annealing region is 700 ℃～1050 ℃, the annealing time scope is 5s～400s.
6. a kind of method of avoiding ion implantation doping ion outgas according to claim 1 and 2 is characterized in that: the amorphous carbon film of described removal surface of silicon is concrete, and what adopt is plasma ashing method.
7. according to a kind of method of avoiding ion implantation doping ion outgas according to claim 1 and 2, it is characterized in that: what the silicon substrate employing was mixed in described cleaning is wet scrubbing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310459703.6A CN103489763A (en) | 2013-09-29 | 2013-09-29 | Method for preventing doping ions from outgassing in process of ion implantation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310459703.6A CN103489763A (en) | 2013-09-29 | 2013-09-29 | Method for preventing doping ions from outgassing in process of ion implantation |
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| CN103489763A true CN103489763A (en) | 2014-01-01 |
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| CN201310459703.6A Pending CN103489763A (en) | 2013-09-29 | 2013-09-29 | Method for preventing doping ions from outgassing in process of ion implantation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990133A (en) * | 2015-03-03 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing diffusion of dopant of doped wafer in high-temperature technological process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1864247A (en) * | 2003-10-03 | 2006-11-15 | 应用材料股份有限公司 | Absorber layer for dynamic surface annealing processing |
| US20070015373A1 (en) * | 2005-07-13 | 2007-01-18 | General Electric Company | Semiconductor device and method of processing a semiconductor substrate |
| US20080108210A1 (en) * | 2006-11-03 | 2008-05-08 | Vijay Parihar | Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants |
| CN101256938A (en) * | 2007-03-02 | 2008-09-03 | 应用材料股份有限公司 | Absorber layer candidates and techniques for application |
| CN102637581A (en) * | 2012-04-06 | 2012-08-15 | 上海华力微电子有限公司 | Method for preventing outgassing of boron doped layer |
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2013
- 2013-09-29 CN CN201310459703.6A patent/CN103489763A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1864247A (en) * | 2003-10-03 | 2006-11-15 | 应用材料股份有限公司 | Absorber layer for dynamic surface annealing processing |
| US20070015373A1 (en) * | 2005-07-13 | 2007-01-18 | General Electric Company | Semiconductor device and method of processing a semiconductor substrate |
| US20080108210A1 (en) * | 2006-11-03 | 2008-05-08 | Vijay Parihar | Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopants |
| CN101256938A (en) * | 2007-03-02 | 2008-09-03 | 应用材料股份有限公司 | Absorber layer candidates and techniques for application |
| CN102637581A (en) * | 2012-04-06 | 2012-08-15 | 上海华力微电子有限公司 | Method for preventing outgassing of boron doped layer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990133A (en) * | 2015-03-03 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | Method for preventing diffusion of dopant of doped wafer in high-temperature technological process |
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Application publication date: 20140101 |