CN105986312A - Segment extraction method for single-crystal rod, and single-crystal rod formed by using method - Google Patents
Segment extraction method for single-crystal rod, and single-crystal rod formed by using method Download PDFInfo
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- CN105986312A CN105986312A CN201510075236.6A CN201510075236A CN105986312A CN 105986312 A CN105986312 A CN 105986312A CN 201510075236 A CN201510075236 A CN 201510075236A CN 105986312 A CN105986312 A CN 105986312A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000013078 crystal Substances 0.000 title abstract description 26
- 238000000605 extraction Methods 0.000 title abstract 7
- 239000007788 liquid Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000112 cooling gas Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- -1 polyoxy Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a segment extraction method for a single-crystal rod, and a single-crystal rod formed by using the method. The segment extraction method comprises the following steps: step 1, beginning segment extraction when the fault edge of the single-crystal rod is 10 to 20 mm long; and step 2, carrying out segment extraction on the single-crystal rod. According to the method, since segment extraction begins when the fault edge of the single-crystal rod is 10 to 20 mm long, heat will not be continuously transmitted to the single-crystal rod from a liquid surface, so possibility of extra damage to an unstable single-crystal structure is small, and the reverse elongation length of the single-crystal rod is small and is 70 to 80% of the value of a diameter, much less than the reverse elongation length of single-crystal rods prepared by using conventional segment extraction methods; and thus, the slicing amount of the single-crystal rod is increased, the utilization rate of the single-crystal rod is improved, and manufacturing cost for the single-crystal rod is reduced.
Description
Technical field
The present invention relates to photovoltaic art, in particular to the monocrystalline carrying phase method and employing the method formation of a kind of monocrystal rod
Rod.
Background technology
Photovoltaic cell is the power generation system unit made based on silicon materials.Vertical pulling N-type monocrystal rod is the most important one of photovoltaic cell
Base material.When making N-type monocrystal rod, the monocrystalline section of carrying after rib and disconnected rib of breaking is inevitable, and the monocrystalline rib that breaks refers to crystal orientation 100 type list
There is the crest line of four projections on crystal bar surface, is referred to as disconnected rib when crest line disappears.
Monocrystalline break rib be the sudden change of external condition such as temperature, the impact of impurity make crystal cannot normal nucleation, monocrystal rod produces position
Wrong, defect, and then there is counter prolonging, the monocrystalline of structural integrity is destroyed i.e. originally.The monocrystal rod section of the carrying process after rib of breaking is temperature
The process of degree sudden change, can make natively do not have completely stable silicon atom to arrange, again upset, and then produce more defect,
The monocrystalline making structural integrity originally is destroyed again, further increases the anti-elongatedness of monocrystal rod.The counter of monocrystal rod extends to instead
The increase of elongatedness makes can number of sections reducing of monocrystal rod, and the cost of manufacture causing monocrystal rod is higher.
Along with being continuously increased solaode demand, the competition of photovoltaic market, in order to make N-type single crystal battery energy
Enough show one's talent under cruel market environment, break that to reduce its cost particularly important for the impact of rib by reducing monocrystalline.Monocrystalline breaks rib
Unavoidably it also is difficult to control, and takes rational method monocrystal rod the is broken section of carrying after rib to be controlled can effectively reducing monocrystalline
Anti-elongatedness after the disconnected rib of rod, reduces the cost of manufacture of monocrystal rod.
At present, the monocrystalline section of carrying after rib of breaking is fairly simple, includes as shown in Figure 1: step S1 ', reduce crucible position and make monocrystal rod depart from
Liquid level；Step S2 ', promote monocrystal rod with the speed of 100mm/h, the lifting time is 2h, step S3 ', fast lifting crystal bar is extremely
Concubine cooling 1h；And step S4 ', go out rod.The above-mentioned whole cooling procedure of phase method that carries is carried out slowly, and monocrystal rod internal heat is not
Can shed timely and effectively, cause its internal temperature constantly to raise, internal flaw constantly produces, and adds its anti-elongatedness, makes
Its anti-elongatedness is 1～1.5 times of diameter value.
Summary of the invention
Present invention is primarily targeted at a kind of monocrystal rod of offer carries phase method, to solve the anti-prolongation of monocrystal rod in prior art
Spend bigger problem.
To achieve these goals, according to another aspect of the present invention, it is provided that a kind of monocrystal rod carry phase method, above-mentioned carry
Phase method includes: step S1, monocrystal rod break rib a length of 10～20mm time start the section of putting forward；And step S2, to above-mentioned monocrystalline
Rod carries out the section of putting forward.
Further, above-mentioned steps S2 includes: step S21, makes the bottom of above-mentioned monocrystal rod and the distance of silicon liquid level 30～60mm
Between；Step S22, lifts above-mentioned monocrystal rod with the first pull rate, and the bottom to above-mentioned monocrystal rod enters guide shell, and above-mentioned the
One pull rate is 100～300mm/h；Step S23, continues to lift above-mentioned monocrystal rod and enters concubine to above-mentioned monocrystal rod；And step
Rapid S24；Above-mentioned monocrystal rod is cooled down to 100～200 DEG C in above-mentioned concubine.
Further, above-mentioned steps S23 includes: step A, lifts above-mentioned monocrystal rod with the second pull rate, to above-mentioned monocrystalline
Guide shell is left in the bottom of rod, and above-mentioned second pull rate is 400～600mm/h；And step B, will with the 3rd pull rate
Above-mentioned monocrystal rod is promoted to above-mentioned concubine, and above-mentioned 3rd pull rate is 600～1000mm/h.
Further, above-mentioned steps S2 use the mode reducing bushing position make the bottom of above-mentioned monocrystal rod and the distance of liquid level exist
Between 30～60mm.
Further, the cool time in above-mentioned steps S24 is 0.75～1.25h.
Further, the pressure of above-mentioned concubine is 300～500torr.
Further, employing cooling gas makes the pressure of above-mentioned concubine be 300～500torr.
To achieve these goals, according to an aspect of the invention, it is provided a kind of monocrystal rod, above-mentioned monocrystal rod uses above-mentioned
Carry phase method formed.
Further, the anti-elongatedness of above-mentioned monocrystal rod is the 60%～80% of above-mentioned monocrystal rod diameter value.
Application technical scheme so that the anti-elongatedness of monocrystal rod is less, for the 70%～80% of diameter value, more existing than using
Have that to carry anti-elongatedness is diameter value 1～1.5 times of monocrystal rod that phase method prepares much smaller.Make the quantity cut into slices of monocrystal rod
Increased, the availability of monocrystal rod increases, and reduces the cost of manufacture of monocrystal rod.
Accompanying drawing explanation
The Figure of description of the part constituting the application is used for providing a further understanding of the present invention, and the present invention's is schematic real
Execute example and illustrate for explaining the present invention, being not intended that inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic flow sheet carrying phase method in prior art；
Fig. 2 shows the schematic flow sheet carrying phase method that a kind of typical embodiment of the present invention provides.
Detailed description of the invention
It it is noted that described further below is all exemplary, it is intended to provide further instruction to the application.Unless otherwise finger
Bright, all technology used herein and scientific terminology have and are generally understood that with the application person of an ordinary skill in the technical field
Identical meanings.
It should be noted that term used herein above merely to describe detailed description of the invention, and be not intended to restricted root according to this Shen
Illustrative embodiments please.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to
Including plural form, additionally, it should be understood that, when use belongs to " comprising " and/or " including " in this manual, its
Indicate existing characteristics, step, operation, device, assembly and/or combinations thereof.
It should be noted that term " first " in the description and claims of this application and above-mentioned accompanying drawing, " second " etc.
It is for distinguishing similar object, without being used for describing specific order or precedence.Should be appreciated that the data of so use
Can exchange in the appropriate case, in order to presently filed embodiment described herein such as can be with except here illustrating or retouching
Order beyond those stated is implemented.Additionally, term " includes " and " having " and their any deformation, it is intended that
Cover non-exclusive comprising, such as, contain series of steps or the process of unit, method, system, product or equipment need not
Be limited to those steps or the unit clearly listed, but can include the most clearly listing or for these processes, method,
Product or intrinsic other step of equipment or unit.
For the ease of describing, space relative terms here can be used, as " ... on ", " ... top ",
" at ... upper surface ", " above " etc., be used for describing such as a device shown in the figure or feature and other devices or
The spatial relation of feature.It should be appreciated that space relative terms is intended to comprise except the described in the drawings orientation of device
Outside different azimuth in use or operation.Such as, if the device in accompanying drawing is squeezed, then it is described as " at other devices
Part or structure above " or " other devices or structure on " device after will be positioned as " other devices or construct under
Side " or " under other devices or structure ".Thus, exemplary term " ... top " can include " ... on
Side " and " in ... lower section " two kinds of orientation.This device can also other different modes location (90-degree rotation or be in its other party
Position), and space used herein above is described relatively make respective explanations.
It should be noted that in the case of not conflicting, the embodiment in the application and the feature in embodiment can be mutually combined.
Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
As background technology is introduced, whole process is the most reasonably controlled by the phase method that carries of monocrystal rod of the prior art
System, the anti-elongatedness causing monocrystal rod is relatively big, in order to solve as above problem, in a kind of typical embodiment of the application, as
Shown in Fig. 2, it is provided that a kind of monocrystal rod carry phase method, this carries phase method and includes: step S1, and the monocrystal rod rib that breaks is a length of
Start, when 10～20mm, the section of putting forward；And step S2, to the above-mentioned monocrystal rod section of carrying.
The application 10mm～20mm a length of to disconnected rib respectively, 20mm～40mm, 8 cun of N-type monocrystal rod of 40mm～60mm
Carry out the section of carrying experiment, result is when disconnected rib length is between 10～20mm, the anti-elongatedness of monocrystal rod between 150～160mm,
When disconnected rib length increases to 20～40mm, the anti-elongatedness of monocrystal rod is between 180～210mm, when disconnected rib length continues to increase
During to 40～more than 60mm, anti-more than the elongatedness 200mm of monocrystal rod.From experimental result: along with monocrystal rod is broken rib length
Increasing, its anti-elongatedness also increased, and the monocrystal rod rib length anti-elongatedness within 20mm that breaks does not has the biggest change,
The disconnected anti-elongatedness of more than rib 20mm extends rapidly, and this result demonstrates thermal shock the most further can change the original of monocrystalline really
Structure.
Therefore, step S1 carried in phase method of the application monocrystal rod starts to carry when disconnected rib a length of 10～20mm of monocrystal rod
Section so that heat will not constantly be transmitted to crystal bar by liquid level, the probability that unstable mono-crystalline structures is destroyed again is less,
The anti-elongatedness making monocrystal rod is less, for the 70%～80% of diameter value, more existing than using carries monocrystal rod anti-that phase method prepares
Elongatedness be 1～1.5 times of diameter value much smaller so that the quantity cut into slices of monocrystal rod has increased, the availability of monocrystal rod
Increase, reduce the cost of manufacture of monocrystal rod.
In order to avoid monocrystal rod rate of heat dispation causes monocrystal rod to crack too soon, and then make can number of sections subtracting of monocrystal rod
Few, preferred above-mentioned steps S2 of the application includes: step S21, makes the bottom of above-mentioned monocrystal rod and the distance of silicon liquid level 30～60mm
Between；Step S22, lifts described monocrystal rod with the first pull rate, and the bottom to described monocrystal rod enters guide shell, and described the
One pull rate is 100～300mm/h；Step S23, continues to lift above-mentioned monocrystal rod and enters concubine to above-mentioned monocrystal rod；And step
Rapid S24；Above-mentioned monocrystal rod is cooled down to 100～200 DEG C in above-mentioned concubine.
In the another kind of preferred embodiment of the application, above-mentioned steps S23 includes: step A, single with the second pull rate lifting
Crystal bar, the bottom to monocrystal rod leaves guide shell, and the second pull rate is 400～600mm/h；And step B, carry with the 3rd
Monocrystal rod is promoted to concubine by pulling rate degree, and the 3rd pull rate is 600～1000mm/h.Due to the radiating rate in guide shell quickly,
Temperature is more stable, also low than the temperature of guide shell bottom, so now should suitably accelerate the pull rate of monocrystal rod, with
The speed pulling single crystal rod of 400～600mm/h so that it is anti-elongatedness is less, turn avoid that pull rate is too fast causes monocrystal rod to be produced
Raw crackle；When the bottom of monocrystal rod leave guide shell initially enter concubine time, owing to the temperature of concubine is lower than the temperature in guide shell,
So now at faster speed monocrystal rod lifting should be entered concubine to its bottom, reduce its anti-elongatedness.When by above-mentioned respectively
When the pull rate of step controls within the above range, it is possible to better control over the increase of the anti-elongatedness of monocrystal rod and avoid carrying
Excessive velocities is drawn to cause monocrystal rod to crack.
In order to use better simply operational approach to make monocrystal rod depart from liquid level, the application preferred steps S2 uses and reduces crucible position
The mode of putting makes the bottom of above-mentioned monocrystal rod and the distance of liquid level between 30～60mm.
In another preferred embodiment of the application, the cool time in above-mentioned steps S24 is 0.75～1.25h.Cool time is
When 0.75～1.25h, both can avoid within the too short time, be cooled to target temperature and make rate of cooling too fast causing have inside monocrystal rod
Crackle, it is also possible to avoid produce more polyoxy alms giver inside long monocrystal rod cool time, affect monocrystal rod quality, the most above-mentioned cold
But condition ensure that the cooling effect of monocrystal rod is preferable, so make monocrystal rod can number of sections more, the cost of monocrystal rod
Relatively low.
In order to be further ensured that the preferable cooling effect of monocrystal rod so that monocrystal rod can number of sections more, the application preferably goes up
The pressure stating concubine is 300～500torr.
Realizing the method that the pressure of the concubine technological means between 300～500torr can use routine, the application preferably employs cold
But gas makes the pressure of above-mentioned concubine be 300～500torr.The cooling gas that can be used for the present invention includes but not limited to argon, nitrogen
The noble gases such as gas.
In the typical embodiment of another of the application, it is provided that a kind of monocrystal rod, the employing of this monocrystal rod is above-mentioned puies forward phase method shape
Become.Using and above-mentioned put forward the monocrystal rod that phase method is formed, its anti-elongatedness is less, can number of sections more, and then make monocrystal rod
Cost of manufacture relatively low.More in order to be further ensured that the number of sections of monocrystal rod, the anti-elongatedness of above-mentioned monocrystal rod is above-mentioned list
The 60%～80% of boule diameter value.
The section of carrying embodiment and comparative example below with reference to 8 cun of n type single crystal silicons further illustrate beneficial effects of the present invention.
Embodiment 1
8 cun of N-type monocrystal rod are occurred disconnected rib, when monocrystal rod breaks a length of 10mm of rib, starts the section of putting forward；Reduce the position of crucible
Put so that the bottom of monocrystal rod departs from liquid level 45mm, i.e. monocrystal rod bottom and is positioned at position 1；In order to avoid monocrystal rod rate of heat dispation
Too fast and cause monocrystal rod to crack, the initial section of the carrying speed of monocrystal rod should be not too fast, and the pull rate keeping 200mm/h will
Monocrystal rod upwards carries, until the bottom that the bottom of monocrystal rod reaches position 2, i.e. monocrystal rod enters guide shell；Temperature in guide shell
Relatively low, rate of heat dispation is very fast, now with the pull rate pulling single crystal rod of 500mm/h, until water conservancy diversion is left in the bottom of monocrystal rod
The in-position, bottom 3 of cylinder entrance concubine, i.e. monocrystal rod；Temperature in concubine is lower than the temperature of guide shell, with 800mm/h's
Pull rate pulling single crystal rod, until monocrystal rod fully enters concubine；Argon cooling gas is used to make the pressure of above-mentioned concubine be
450torr, monocrystal rod is 1h in the cool time of concubine so that the cooling effect of monocrystal rod is preferable；Finally go out rod.Monocrystal rod
Anti-elongatedness is shown in Table 2.
Embodiment 2
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Embodiment 3
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Embodiment 4
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Embodiment 5
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Embodiment 6
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Embodiment 7
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Embodiment 8
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Comparative example 1
8 cun of N-type monocrystal rod sections of carrying to disconnected rib, the concrete operations parameter of the section of carrying is shown in Table 1.The counter of the monocrystal rod obtained prolongs
Length is shown in Table 2.
Table 1
Employing acetic acid soaks out the lower end of the monocrystal rod after rod, and the length of monocrystal rod surface sliding line is equal to the anti-elongatedness of monocrystal rod,
And then by measuring the length of monocrystal rod surface sliding line, obtain the anti-elongatedness of monocrystal rod, the monocrystal rod corresponding to above-mentioned each example
Anti-elongatedness as shown in table 2.
Table 2
| The anti-elongatedness of monocrystal rod (mm) | |
| Embodiment 1 | 153 |
| Embodiment 2 | 156 |
| Embodiment 3 | 157 |
| Embodiment 4 | 163 |
| Embodiment 5 | 171 |
| Embodiment 6 | 176 |
| Embodiment 7 | 173 |
| Embodiment 8 | 175 |
| Comparative example 1 | 192 |
As seen from the above table: monocrystal rod is broken after rib, start, when its disconnected rib a length of 10～20mm, the section of putting forward, the monocrystal rod obtained anti-
Elongatedness is less, between 153～176mm, monocrystal rod can number of sections more；When the first pull rate be 100～300mm/h,
Second pull rate is 400～600mm/h and the 3rd pull rate when being 600～1000mm/h, the anti-prolongation of the monocrystal rod obtained
Spend less, between 153～171mm, monocrystal rod can number of sections more, the availability of monocrystal rod is higher, and cost is relatively low.
As can be seen from the above description, the above embodiments of the present invention achieve following technique effect:
1) phase method that carries of the monocrystal rod in the application starts, when disconnected rib a length of 10～20mm of monocrystal rod, the section of putting forward so that heat
Amount will not be transmitted to crystal bar by liquid level continuously, and the probability that the mono-crystalline structures of less stable is destroyed again is less so that
The anti-elongatedness of monocrystal rod is less so that the quantity cut into slices of monocrystal rod has increased, the availability of monocrystal rod increases, fall
The low cost of manufacture of monocrystal rod.
2) above-mentioned monocrystal rod use in the application carry phase method formed, its anti-elongatedness is less, can number of sections more, make
Cost is relatively low.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for those skilled in the art
For, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, any amendment of being made, etc.
With replacement, improvement etc., should be included within the scope of the present invention.
Claims (9)
1. a monocrystal rod carry phase method, it is characterised in that described in carry phase method and include:
Step S1, monocrystal rod break rib a length of 10～20mm time start the section of putting forward；And
Step S2, to the described monocrystal rod section of carrying.
The most according to claim 1 carry phase method, it is characterised in that described step S2 includes:
Step S21, makes the bottom of described monocrystal rod and the distance of silicon liquid level between 30～60mm；
Step S22, lifts described monocrystal rod with the first pull rate, and the bottom to described monocrystal rod enters guide shell, described
First pull rate is 100～300mm/h；
Step S23, continues to lift described monocrystal rod and enters concubine to described monocrystal rod；And
Step S24；Described monocrystal rod is cooled down to 100～200 DEG C in described concubine.
The most according to claim 2 carry phase method, it is characterised in that described step S23 includes:
Step A, lifts described monocrystal rod with the second pull rate, and guide shell is left in the bottom to described monocrystal rod, described
Second pull rate is 400～600mm/h；And
Step B, is promoted to described concubine with the 3rd pull rate by described monocrystal rod, and described 3rd pull rate is
600～1000mm/h.
The most according to claim 2 carry phase method, it is characterised in that described step S2 uses the mode reducing bushing position
Make the bottom of described monocrystal rod and the distance of liquid level between 30～60mm.
The most according to claim 2 carry phase method, it is characterised in that the cool time in described step S24 is 0.75～1.25h.
The most according to claim 2 carry phase method, it is characterised in that the pressure of described concubine is 300～500torr.
The most according to claim 6 carry phase method, it is characterised in that use cooling gas to make the pressure of described concubine to be
300～500torr.
8. a monocrystal rod, it is characterised in that described monocrystal rod uses the phase method that carries according to any one of claim 1 to 7 to be formed.
Monocrystal rod the most according to claim 8, it is characterised in that the anti-elongatedness of described monocrystal rod is described monocrystal rod diameter
The 60%～80% of value.
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| CN201510075236.6A CN105986312B (en) | 2015-02-11 | 2015-02-11 | Monocrystal rod carries phase method and the monocrystal rod formed using this method |
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| CN103074681A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Secondary feeding method |
| CN103422159A (en) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | Impurity removing method in pulling single crystal production process |
| CN203569241U (en) * | 2013-11-29 | 2014-04-30 | 英利能源（中国）有限公司 | Growth detection device of single crystal silicon rod |
| CN104328494A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
-
2015
- 2015-02-11 CN CN201510075236.6A patent/CN105986312B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103422159A (en) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | Impurity removing method in pulling single crystal production process |
| CN103074681A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Secondary feeding method |
| CN203569241U (en) * | 2013-11-29 | 2014-04-30 | 英利能源（中国）有限公司 | Growth detection device of single crystal silicon rod |
| CN104328494A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
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