CN103290467A - Water-cooled jacket structure of single crystal furnace - Google Patents
Water-cooled jacket structure of single crystal furnace Download PDFInfo
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- CN103290467A CN103290467A CN2012100432364A CN201210043236A CN103290467A CN 103290467 A CN103290467 A CN 103290467A CN 2012100432364 A CN2012100432364 A CN 2012100432364A CN 201210043236 A CN201210043236 A CN 201210043236A CN 103290467 A CN103290467 A CN 103290467A
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Abstract
The invention discloses a water-cooled jacket structure of a single crystal furnace, belongs to a single crystal furnace smelting device of a smelting system, and particularly relates to a water-cooled jacket structure for smelting the single crystal furnace. The water-cooled jacket is prepared from a flange, a connecting pipe and an outer barrel in assembling and welding manners; the flange is made into a hollow cavity flange; a lower plane is welded with the connecting pipe; the connecting pipe is a through pipe; the upper end is connected with the flange cavity; the lower end is connected with the hollow cavity which is composed of an outer barrel and an inner barrel assembled and welded in the same axis; the cavity is arranged at the center part of the upper end of a furnace lid. The water-cooled jacket structure has the beneficial effects that the bar forming efficiency is improved; the operation is rapid and convenient, the energy consumption is reduced; the productivity of the product is improved.
Description
Technical field:
Single crystal growing furnace water jacket structure of the present invention belongs to smelting system single crystal growing furnace smelting device, and particularly single crystal growing furnace is smelted the water-cooled nested structure.
Background technology:
The metallurgy industry single crystal growing furnace is that polysilicon is converted into the indispensable equipment in the silicon single crystal technological process, and silicon single crystal is the basic material in photovoltaic generation and the semicon industry, silicon single crystal is as the critical support material of advanced information society, it is one of most important monocrystal material in the world at present, it is not only the major function material of development computer and unicircuit, also is the major function material that photovoltaic generation utilizes sun power; In the silicon single-crystal pulling process, use water jacket, can accelerate the cooling of crystal bar, the one-tenth that improves crystal bar is long-time, improves crystal pulling efficient, and general employing of the water jacket that uses is weldingly fixed on the bell at present, structure is dumb, and cooling performance is poor, and crystal bar is not easy to be cooled.
Summary of the invention:
In view of this, be necessary to provide a kind of good cooling results, the high new texture single crystal growing furnace water jacket structure of the excellent efficient of one-tenth.
Single crystal growing furnace water jacket structure of the present invention contains seed crystal rope, bell, crystal bar, silicon liquid, quartz crucible and graphite thermal field, and it is characterized in that: water jacket is made up of flange, adapter, urceolus and inner core; Water jacket is made by flange, adapter and urceolus assembly welding, and flange is made the hollow cavity flange, and the lower plane welding is taken over, take over and be siphunculus, upper end joint flange cavity, the lower end connects by urceolus and the cavity that inner core concentric assembly welding becomes, and is installed in centre, bell upper end; Seed crystal rope upper end is installed in the pulling apparatus, and the lower end connects the crystal bar top, and crystal bar is lowered the temperature in water jacket, and bell is the Water-cooling Welding fitting; Crystal bar is to produce in the pulling process; Silicon liquid is the high temperature silicon melt, is contained in the quartz crucible; Quartz crucible is placed in the graphite thermal field; The seed crystal rope is made by the big tungsten filament of high temperature resistant tensile strength, and bell is made by the stainless material assembly welding.
During operation, pulling apparatus drives the seed crystal rope and rises, under the drive of seed crystal rope, crystal bar rises, and the lower end of crystal bar and silicon liquid begin crystallization because of the cause of temperature head, under the effect of water jacket, the part crystal bar that is introduced into cooling aggravation can reduce after the blowing out crystal bar cooling time.
Single crystal growing furnace water jacket structure beneficial effect of the present invention: improve into excellent efficient, quick and easy, cut down the consumption of energy, improve the productive rate of product.
Description of drawings:
Accompanying drawing is the structural representation of single crystal growing furnace water jacket structure of the present invention.
Among the figure: seed crystal rope 1, bell 3, crystal bar 4, silicon liquid 5, quartz crucible 6, graphite thermal field 2: water jacket by flange 7, take over 8, urceolus 9, inner core 10.
Embodiment:
Single crystal growing furnace water jacket structure of the present invention contains seed crystal rope 1, bell 3, crystal bar 4, silicon liquid 5, quartz crucible 6 and graphite thermal field 2, it is characterized in that: water jacket is made up of flange 7, adapter 8, urceolus 9 and inner core 10; Water jacket is made by flange 7, adapter 8, urceolus 9 and inner core 10 assembly weldings, and flange 7 is made the hollow cavity flange, and the lower plane welding takes over 8, taking over 8 is siphunculus, upper end joint flange 7 cavitys, the lower end connects by urceolus 9 and the cavity that inner core 10 concentric assembly weldings become, and is installed in centre, bell 3 upper end; Seed crystal rope 1 upper end is installed in the pulling apparatus, and the lower end connects crystal bar 4 tops, and crystal bar 4 is lowered the temperature in water jacket 2, and bell 3 is the Water-cooling Welding fitting; Crystal bar 4 produces in the pulling process; Silicon liquid 5 is the high temperature silicon melt, is contained in the quartz crucible 6; Quartz crucible 6 is placed in the graphite thermal field 2; Seed crystal rope 1 is made by the big tungsten filament of high temperature resistant tensile strength, and bell 3 is made by the stainless material assembly welding.
Claims (3)
1. single crystal growing furnace water jacket structure, contain seed crystal rope (1), bell (3), crystal bar (4), silicon liquid (5), quartz crucible (6) and graphite thermal field (2), it is characterized in that: water jacket is made up of flange (7), adapter (8), urceolus (9) and inner core (10); Water jacket is made by flange (7), adapter (8), urceolus (9) and inner core (10) assembly welding, flange (7) is made the hollow cavity flange, (8) are taken in the lower plane welding, taking over (8) is siphunculus, upper end joint flange (7) cavity, the lower end connects by urceolus (9) and the cavity that inner core (10) concentric assembly welding becomes, and is installed in centre, bell (3) upper end; Seed crystal rope (1) upper end is installed in the pulling apparatus, and the lower end connects crystal bar (4) top, and crystal bar (4) is lowered the temperature in water jacket (2), and bell (3) is the Water-cooling Welding fitting; Crystal bar (4) produces in the pulling process; Silicon liquid (5) is the high temperature silicon melt, is contained in the quartz crucible (6); Quartz crucible (6) is placed in the graphite thermal field (2).
2. according to the described single crystal growing furnace water jacket of claim 1 structure, it is characterized in that: seed crystal rope (1) is made by the big tungsten filament of high temperature resistant tensile strength.
3. according to the described single crystal growing furnace water jacket of claim 1 structure, it is characterized in that: bell (3) is made by the stainless material assembly welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210043236.4A CN103290467B (en) | 2012-02-24 | 2012-02-24 | Single crystal growing furnace water jacket structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210043236.4A CN103290467B (en) | 2012-02-24 | 2012-02-24 | Single crystal growing furnace water jacket structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103290467A true CN103290467A (en) | 2013-09-11 |
| CN103290467B CN103290467B (en) | 2016-04-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201210043236.4A Active CN103290467B (en) | 2012-02-24 | 2012-02-24 | Single crystal growing furnace water jacket structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603520A (en) * | 2016-01-20 | 2016-05-25 | 西安交通大学 | High-speed single crystal growth device and method |
| CN107012501A (en) * | 2017-03-29 | 2017-08-04 | 上海汉虹精密机械有限公司 | A kind of monocrystalline silicon growing furnace water cooling covering device |
| CN111575783A (en) * | 2019-02-18 | 2020-08-25 | 信越半导体株式会社 | Silicon single crystal pulling apparatus |
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| JPH08119786A (en) * | 1994-10-24 | 1996-05-14 | Mitsubishi Materials Corp | Device for pulling up single crystal |
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| CN101575731A (en) * | 2009-06-22 | 2009-11-11 | 上虞晶盛机电工程有限公司 | Vertical pulling silicon single crystal growing furnace with water-cooling jacket |
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| KR20100071526A (en) * | 2008-12-19 | 2010-06-29 | 주식회사 실트론 | Silicon single crystal cooler and silicon single crystal growth apparatus having the same |
| CN201785551U (en) * | 2010-09-14 | 2011-04-06 | 安徽中科太阳能有限公司 | Cooling structure of single crystal furnace cover |
| CN201890950U (en) * | 2010-11-30 | 2011-07-06 | 江苏华盛天龙光电设备股份有限公司 | Air-cooling jacket for straight pull type silicon single crystal growing furnace |
| CN202643884U (en) * | 2012-02-24 | 2013-01-02 | 宁夏日晶新能源装备股份有限公司 | Single crystal furnace water-cooled sleeve structure |
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2012
- 2012-02-24 CN CN201210043236.4A patent/CN103290467B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08119786A (en) * | 1994-10-24 | 1996-05-14 | Mitsubishi Materials Corp | Device for pulling up single crystal |
| JP2000034192A (en) * | 1998-07-17 | 2000-02-02 | Mitsubishi Materials Silicon Corp | Silicon single crystal-pulling machine |
| CN200958129Y (en) * | 2006-06-08 | 2007-10-10 | 上海汉虹精密机械有限公司 | Movable hot screen apparatus of monocrystal furnace |
| CN101333676A (en) * | 2008-08-02 | 2008-12-31 | 符志椿 | Bearing ball at end of tungsten wire rope and forming process |
| KR20100071526A (en) * | 2008-12-19 | 2010-06-29 | 주식회사 실트론 | Silicon single crystal cooler and silicon single crystal growth apparatus having the same |
| CN201372320Y (en) * | 2009-01-20 | 2009-12-30 | 西安创联新能源设备有限公司 | Single entry-type water-cooled furnace cover of single crystal furnace |
| CN201395639Y (en) * | 2009-04-20 | 2010-02-03 | 潘燕萍 | Filtration structure of mono-crystal furnace cover |
| CN101575731A (en) * | 2009-06-22 | 2009-11-11 | 上虞晶盛机电工程有限公司 | Vertical pulling silicon single crystal growing furnace with water-cooling jacket |
| CN201785551U (en) * | 2010-09-14 | 2011-04-06 | 安徽中科太阳能有限公司 | Cooling structure of single crystal furnace cover |
| CN201890950U (en) * | 2010-11-30 | 2011-07-06 | 江苏华盛天龙光电设备股份有限公司 | Air-cooling jacket for straight pull type silicon single crystal growing furnace |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105603520A (en) * | 2016-01-20 | 2016-05-25 | 西安交通大学 | High-speed single crystal growth device and method |
| CN105603520B (en) * | 2016-01-20 | 2018-10-30 | 西安交通大学 | A kind of high speed single-crystal growing apparatus and method |
| CN107012501A (en) * | 2017-03-29 | 2017-08-04 | 上海汉虹精密机械有限公司 | A kind of monocrystalline silicon growing furnace water cooling covering device |
| CN107012501B (en) * | 2017-03-29 | 2019-05-17 | 上海汉虹精密机械有限公司 | A kind of monocrystalline silicon growing furnace water cooling covering device |
| CN111575783A (en) * | 2019-02-18 | 2020-08-25 | 信越半导体株式会社 | Silicon single crystal pulling apparatus |
| CN111575783B (en) * | 2019-02-18 | 2021-12-31 | 信越半导体株式会社 | Silicon single crystal pulling apparatus |
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| Publication number | Publication date |
|---|---|
| CN103290467B (en) | 2016-04-13 |
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Address after: Sheng Road Economic Development Zone Shizuishan city the Ningxia Hui Autonomous Region Xin 753000 Applicant after: Ningxia Rijing New Energy Euipment Co., Ltd. Address before: Sheng Road Economic Development Zone Shizuishan city the Ningxia Hui Autonomous Region Xin 753000 Applicant before: Ningxia Rijing New Energy Euipment Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: NINGXIA RIJING NEW ENERGY EQUIPMENT CO., LTD. TO: NINGXIA YINGGU INDUSTRIAL CO., LTD. |
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Effective date of registration: 20180110 Address after: 753000, 16, Xin Sheng Road, Dawukou District, the Ningxia Hui Autonomous Region, Shizuishan Patentee after: Ningxia Xu Sakura Amperex Technology Limited Address before: Sheng Road Economic Development Zone Shizuishan city the Ningxia Hui Autonomous Region Xin 753000 Patentee before: Ningxia Rijing New Energy Euipment Co., Ltd. |