CN105986312B - Monocrystal rod carries phase method and the monocrystal rod formed using this method - Google Patents
Monocrystal rod carries phase method and the monocrystal rod formed using this method Download PDFInfo
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- CN105986312B CN105986312B CN201510075236.6A CN201510075236A CN105986312B CN 105986312 B CN105986312 B CN 105986312B CN 201510075236 A CN201510075236 A CN 201510075236A CN 105986312 B CN105986312 B CN 105986312B
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims description 11
- 239000000112 cooling gas Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- -1 polyoxy Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Phase method and the monocrystal rod formed using this method are carried the present invention provides a kind of monocrystal rod.This, which carries phase method, includes：Step S1, monocrystal rod break rib length to start to put forward section during 10~20mm；Step S2 carries out monocrystal rod to put forward section.Step S1 in this method starts to put forward section when the disconnected rib length of monocrystal rod is 10~20mm, so that heat will not be transmitted constantly from liquid level to crystal bar, the possibility that unstable mono-crystalline structures are destroyed again is smaller, so that the anti-elongatedness of monocrystal rod is smaller, for the 70%~80% of diameter value, it is more much smaller than using the existing anti-elongatedness for putting forward monocrystal rod made from phase method so that the quantity cut into slices of monocrystal rod is increased, the availability of monocrystal rod increases, and reduces the cost of manufacture of monocrystal rod.
Description
Technical field
The present invention relates to photovoltaic arts, and phase method is carried with being formed using this method in particular to a kind of monocrystal rod
Monocrystal rod.
Background technology
Photovoltaic cell is the power generation system unit made based on silicon materials.Vertical pulling N-type monocrystal rod is most important for photovoltaic cell
A kind of base material.When making N-type monocrystal rod, monocrystalline break after rib and disconnected rib to put forward section inevitable, the monocrystalline rib that breaks refers to crystal orientation
There is the crest line of four protrusions on 100 type monocrystal rod surfaces, are referred to as disconnected rib when crest line disappears.
Monocrystalline break rib be the mutation of external condition such as temperature, the influence of impurity so that crystal can not be normally nucleated, monocrystal rod
Generate dislocation, defect, and then occur it is counter prolong, i.e. the monocrystalline of script structural integrity is destroyed.Monocrystal rod, which is broken, puies forward a section mistake after rib
Journey is the process of temperature jump, can natively to arrange without the silicon atom of complete stability, upset again, and then generate more
The defects of, the monocrystalline of script structural integrity is made to be destroyed again, further increases the anti-elongatedness of monocrystal rod.Monocrystal rod
The anti-increase for extending to anti-elongatedness so that monocrystal rod can number of sections reduce, the cost of manufacture for causing monocrystal rod is higher.
With being continuously increased to solar cell demand, the competition of photovoltaic market, in order to make N-type monocrystalline electric
Pond can show one's talent under cruel market environment, break that reduce its cost particularly important for the influence of rib by reducing monocrystalline.It is single
The disconnected rib of crystalline substance also unavoidably is difficult to control, and rational method is taken to break carrying after rib to monocrystal rod section controls can be effective
It reduces monocrystal rod to break the anti-elongatedness after rib, reduces the cost of manufacture of monocrystal rod.
At present, monocrystalline break after rib to put forward section fairly simple, include as shown in Figure 1：Step S1 ', reducing crucible position makes monocrystal rod
Depart from liquid level；Step S2 ' promotes monocrystal rod with the speed of 100mm/h, and the promotions time is 2h, step S3 ', fast lifting crystal bar
1h is cooled down to concubine；And step S4 ', go out stick.The above-mentioned entire cooling procedure of phase method that carries carries out slow, monocrystal rod internal heat
It cannot timely and effectively shed, its internal temperature is caused constantly to raise, internal flaw constantly generates, and adds its anti-elongatedness,
So that its anti-elongatedness is 1~1.5 times of diameter value.
The content of the invention
It is a primary object of the present invention to provide a kind of monocrystal rod to carry phase method, to solve monocrystal rod in the prior art
The problem of anti-elongatedness is larger.
To achieve these goals, according to another aspect of the present invention, provide a kind of monocrystal rod carries phase method, on
It states and carries phase method and include：Step S1, monocrystal rod break rib length to start to put forward section during 10~20mm；And step S2, to above-mentioned list
Crystal bar carries out putting forward section.
Further, above-mentioned steps S2 includes：Step S21, make above-mentioned monocrystal rod bottom and silicon liquid level distance 30
Between~60mm；Step S22 lifts above-mentioned monocrystal rod with the first pull rate, until the bottom of above-mentioned monocrystal rod enters guide shell,
Above-mentioned first pull rate is 100~300mm/h；Step S23, continues to lift above-mentioned monocrystal rod to above-mentioned monocrystal rod and enters pair
Room；And step S24；Above-mentioned monocrystal rod is cooled down in above-mentioned concubine to 100~200 DEG C.
Further, above-mentioned steps S23 includes：Step A lifts above-mentioned monocrystal rod, until above-mentioned list with the second pull rate
Guide shell is left in the bottom of crystal bar, and above-mentioned second pull rate is 400~600mm/h；And step B, with the 3rd pull rate
Above-mentioned monocrystal rod is promoted to above-mentioned concubine, above-mentioned 3rd pull rate is 600~1000mm/h.
Further, bottom and the liquid level of above-mentioned monocrystal rod are made in above-mentioned steps S2 by the way of bushing position is reduced
Distance is between 30~60mm.
Further, the cooling time in above-mentioned steps S24 is 0.75~1.25h.
Further, the pressure of above-mentioned concubine is 300~500torr.
Further, cooling gas is used so that the pressure of above-mentioned concubine is 300~500torr.
To achieve these goals, according to an aspect of the invention, there is provided a kind of monocrystal rod, above-mentioned monocrystal rod use
The above-mentioned phase method that carries is formed.
Further, the anti-elongatedness of above-mentioned monocrystal rod is the 60%~80% of above-mentioned monocrystal rod diameter value.
It applying the technical scheme of the present invention so that the anti-elongatedness of monocrystal rod is smaller, is the 70%~80% of diameter value, than
Use the existing anti-elongatedness for putting forward monocrystal rod made from phase method much smaller for 1~1.5 times of diameter value.So that monocrystal rod can
The quantity of section is increased, the availability of monocrystal rod increases, and reduces the cost of manufacture of monocrystal rod.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing a further understanding of the present invention, and of the invention shows
Meaning property embodiment and its explanation do not constitute improper limitations of the present invention for explaining the present invention.In the accompanying drawings：
Fig. 1 shows the flow diagram for carrying phase method in the prior art；
Fig. 2 shows the flow diagram for carrying phase method that a kind of typical embodiment of the present invention provides.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.It is unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " bag
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be the object for distinguishing similar, without being used to describe specific order or precedence.It should be appreciated that it so uses
Data can exchange in the appropriate case, so that presently filed embodiment described herein for example can be with except herein
Order beyond those of diagram or description is implemented.In addition, term " comprising " and " having " and their any deformation, it is intended that
Be to cover it is non-exclusive include, for example, containing the process of series of steps or unit, method, system, product or equipment not
Be necessarily limited to those steps clearly listed or unit, but may include not list clearly or for these processes, side
The intrinsic other steps of method, product or equipment or unit.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be appreciated that spatially relative term is intended to comprising the orientation except device described in figure
Outside different azimuth in use or operation.For example, if the device in attached drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.The present invention will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
As background technology is introduced, the phase method that carries of monocrystal rod of the prior art does not close whole process
The control of reason ground, the anti-elongatedness for causing monocrystal rod is larger, in order to solve the problems, such as above, in a kind of typical embodiment of the application
In, as shown in Fig. 2, provide a kind of monocrystal rod carries phase method, this, which carries phase method, includes：Step S1, monocrystal rod are broken rib length
To start to put forward section during 10~20mm；And step S2, above-mentioned monocrystal rod is carried out to put forward section.
The application is respectively to 8 cun of N-type monocrystal rods that rib length is 10mm~20mm, 20mm~40mm, 40mm~60mm of breaking
Propose section experiment, result be when disconnected rib length is between 10~20mm, the anti-elongatedness of monocrystal rod 150~160mm it
Between, when disconnected rib length increase is to 20~40mm, the anti-elongatedness of monocrystal rod is between 180~210mm, when disconnected rib length continues
When increasing to 40~more than 60mm, anti-more than the elongatedness 200mm of monocrystal rod.From experimental result：As monocrystal rod is broken rib
The increase of length, anti-elongatedness also increased, monocrystal rod break rib length anti-elongatedness within 20mm do not have it is too big
Variation, the disconnected anti-elongatedness of more than rib 20mm extends rapidly, this result also further demonstrates thermal shock can change list really
Brilliant original structure.
Therefore, the step S1 carried in phase method of the application monocrystal rod is opened when the disconnected rib length of monocrystal rod is 10~20mm
Beginning puies forward section so that heat will not be transmitted constantly from liquid level to crystal bar, the possibility that unstable mono-crystalline structures are destroyed again
It is smaller so that the anti-elongatedness of monocrystal rod is smaller, is the 70%~80% of diameter value, than carrying list made from phase method using existing
The anti-elongatedness of crystal bar is 1~1.5 times of diameter value much smaller so that the quantity cut into slices of monocrystal rod is increased, monocrystalline
The availability of stick increases, and reduces the cost of manufacture of monocrystal rod.
In order to avoid monocrystal rod rate of heat dispation is too fast monocrystal rod is caused to crack, so that monocrystal rod is cut into slices
Quantity is reduced, and the preferred above-mentioned steps S2 of the application includes：Step S21 makes the bottom of above-mentioned monocrystal rod and the distance of silicon liquid level exist
Between 30~60mm；Step S22 lifts the monocrystal rod, until the bottom of the monocrystal rod enters water conservancy diversion with the first pull rate
Cylinder, first pull rate are 100~300mm/h；Step S23, continues to lift above-mentioned monocrystal rod to above-mentioned monocrystal rod and enters
Concubine；And step S24；Above-mentioned monocrystal rod is cooled down in above-mentioned concubine to 100~200 DEG C.
In another preferred embodiment of the application, above-mentioned steps S23 includes：Step A is lifted with the second pull rate
Monocrystal rod, until guide shell is left in the bottom of monocrystal rod, the second pull rate is 400~600mm/h；And step B, it is carried with the 3rd
Monocrystal rod is promoted to concubine by pulling rate degree, and the 3rd pull rate is 600~1000mm/h.Due to the radiating rate in guide shell very
Soon, temperature is relatively stablized, also lower than the temperature of guide shell lower part, so should suitably accelerate the pull rate of monocrystal rod at this time, with
The speed pulling single crystal stick of 400~600mm/h makes its anti-elongatedness smaller, in turn avoids that pull rate is too fast to cause monocrystal rod
It cracks；When guide shell is left in the bottom of monocrystal rod initially enters concubine, since the temperature of concubine is than the temperature in guide shell
It spends low, enters concubine so should at faster speed lift monocrystal rod to its bottom at this time, reduce its anti-elongatedness.As general
Above steps pull rate control within the above range when, can preferably control monocrystal rod anti-elongatedness increase with
And avoid pull rate is too fast monocrystal rod is caused to crack.
In order to using better simply operating method monocrystal rod be caused to depart from liquid level, being used in the application preferred steps S2 reduces
Bushing position mode make above-mentioned monocrystal rod bottom and liquid level distance between 30~60mm.
In another preferred embodiment of the application, the cooling time in above-mentioned steps S24 is 0.75~1.25h.It is cold
But when the time is 0.75~1.25h, both it can make cooling velocity is too fast to lead to avoid target temperature is cooled within the too short time
It causes have crackle inside monocrystal rod, can also avoid generating more polyoxy alms giver inside long monocrystal rod cooling time, influence monocrystal rod
Quality, therefore above-mentioned cooling condition can ensure that the cooling effect of monocrystal rod is preferable so that monocrystal rod can number of sections
More, the cost of monocrystal rod is relatively low.
In order to further ensure the preferable cooling effect of monocrystal rod so that monocrystal rod can number of sections it is more, the application
It is preferred that the pressure of above-mentioned concubine is 300~500torr.
Realize that conventional method may be employed in technological means of the pressure of concubine between 300~500torr, the application is excellent
Choosing uses cooling gas to cause the pressure of above-mentioned concubine for 300~500torr.Cooling gas for use in the present invention is included but not
It is limited to the inert gases such as argon gas, nitrogen.
In the typical embodiment of another of the application, a kind of monocrystal rod is provided, which puies forward section using above-mentioned
Method is formed.Using it is above-mentioned carry phase method formation monocrystal rod, anti-elongatedness is smaller, can number of sections it is more so that
The cost of manufacture of monocrystal rod is relatively low.It is more in order to further ensure the number of sections of monocrystal rod, the anti-elongatedness of above-mentioned monocrystal rod
For the 60%~80% of above-mentioned monocrystal rod diameter value.
Below with reference to the advantageous effect for putting forward section embodiment and comparative example and further illustrating the present invention of 8 cun of n type single crystal silicons.
Embodiment 1
Occur disconnected ribs to 8 cun of N-type monocrystal rods, monocrystal rod break rib length for 10mm when, start to put forward section；Reduce the position of crucible
It puts so that the bottom of monocrystal rod departs from liquid level 45mm, i.e. monocrystal rod bottom is located at position 1；In order to avoid monocrystal rod rate of heat dispation
Soon monocrystal rod is caused to crack very much, the initial section speed that carries of monocrystal rod should not be too fast, keeps the pull rate of 200mm/h will
Monocrystal rod carries upwards, until the bottom of monocrystal rod reaches position 2, i.e. the bottom of monocrystal rod enters guide shell；Temperature in guide shell
Spend relatively low, rate of heat dispation is very fast, at this time with the pull rate pulling single crystal stick of 500mm/h, until the bottom of monocrystal rod is left and led
Flow cartridge enters the bottom in-position 3 of concubine, i.e. monocrystal rod；Temperature in concubine is lower than the temperature of guide shell, with 800mm/h's
Pull rate pulling single crystal stick, until monocrystal rod fully enters concubine；Use argon gas cooling gas make the pressure of above-mentioned concubine for
450torr, monocrystal rod are 1h in the cooling time of concubine so that the cooling effect of monocrystal rod is preferable；Finally go out stick.Monocrystal rod
Anti- elongatedness is shown in Table 2.
Embodiment 2
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Embodiment 3
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Embodiment 4
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Embodiment 5
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Embodiment 6
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Embodiment 7
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Embodiment 8
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Comparative example 1
8 cun of N-type monocrystal rods of the rib that breaks are carried out putting forward section, the concrete operations parameter for putting forward section is shown in Table 1.Obtained monocrystal rod it is anti-
Elongatedness is shown in Table 2.
Table 1
The lower end of the monocrystal rod after stick is soaked out using acetic acid, the length of monocrystal rod surface sliding line is equal to the anti-of monocrystal rod
Elongatedness, and then the length by measuring monocrystal rod surface sliding line, obtain the anti-elongatedness of monocrystal rod, corresponding to above-mentioned each example
Monocrystal rod anti-elongatedness it is as shown in table 2.
Table 2
| The anti-elongatedness of monocrystal rod (mm) | |
| Embodiment 1 | 153 |
| Embodiment 2 | 156 |
| Embodiment 3 | 157 |
| Embodiment 4 | 163 |
| Embodiment 5 | 171 |
| Embodiment 6 | 176 |
| Embodiment 7 | 173 |
| Embodiment 8 | 175 |
| Comparative example 1 | 192 |
As seen from the above table：Monocrystal rod is broken after rib, starts the monocrystal rod for putting forward section, obtaining when its rib length of breaking is 10~20mm
Anti- elongatedness it is smaller, between 153~176mm, monocrystal rod can number of sections it is more；When the first pull rate for 100~
When 300mm/h, the second pull rate are 400~600mm/h and the 3rd pull rate is 600~1000mm/h, obtained monocrystalline
The anti-elongatedness smaller of stick, between 153~171mm, monocrystal rod can number of sections it is more, the availability of monocrystal rod compared with
Height, cost are relatively low.
It can be seen from the above description that the above embodiments of the present invention realize following technique effect：
1) phase method that carries of the monocrystal rod in the application starts to put forward section when the disconnected rib length of monocrystal rod is 10~20mm, makes
Heat will not be transmitted continuously from liquid level to crystal bar, the possibility that the mono-crystalline structures of less stable are destroyed again compared with
It is small so that the anti-elongatedness of monocrystal rod is smaller so that the quantity cut into slices of monocrystal rod is increased, the availability of monocrystal rod
Increase, reduce the cost of manufacture of monocrystal rod.
2) above-mentioned monocrystal rod is formed using the phase method that carries in the application, and anti-elongatedness is smaller, can number of sections it is more,
Cost of manufacture is relatively low.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of monocrystal rod carries phase method, which is characterized in that the phase method that carries includes：
Step S1, monocrystal rod break rib length to start to put forward section during 10~20mm；And
Step S2 carries out the monocrystal rod to put forward section.
2. according to claim 1 carry phase method, which is characterized in that the step S2 includes：
Step S21, make the monocrystal rod bottom and silicon liquid level distance between 30~60mm；
Step S22 lifts the monocrystal rod with the first pull rate, until the bottom of the monocrystal rod enters guide shell, described the
One pull rate is 100~300mm/h；
Step S23, continues to lift the monocrystal rod to the monocrystal rod and enters concubine；And
Step S24；The monocrystal rod is cooled down in the concubine to 100~200 DEG C.
3. according to claim 2 carry phase method, which is characterized in that the step S23 includes：
Step A lifts the monocrystal rod with the second pull rate, until guide shell is left in the bottom of the monocrystal rod, described second
Pull rate is 400~600mm/h；And
The monocrystal rod is promoted to the concubine by step B with the 3rd pull rate, the 3rd pull rate for 600~
1000mm/h。
4. according to claim 2 carry phase method, which is characterized in that using the side for reducing bushing position in the step S2
Formula make the monocrystal rod bottom and liquid level distance between 30~60mm.
5. according to claim 2 carry phase method, which is characterized in that cooling time in the step S24 for 0.75~
1.25h。
6. according to claim 2 carry phase method, which is characterized in that the pressure of the concubine is 300~500torr.
7. according to claim 6 carry phase method, which is characterized in that use cooling gas cause the pressure of the concubine for
300~500torr.
8. a kind of monocrystal rod, which is characterized in that the monocrystal rod carries phase method using any one of claim 1 to 7
It is formed, the anti-elongatedness of the monocrystal rod is the 60%~80% of the monocrystal rod diameter value.
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| CN201510075236.6A CN105986312B (en) | 2015-02-11 | 2015-02-11 | Monocrystal rod carries phase method and the monocrystal rod formed using this method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103074681A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Secondary feeding method |
| CN103422159A (en) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | Impurity removing method in pulling single crystal production process |
| CN203569241U (en) * | 2013-11-29 | 2014-04-30 | 英利能源（中国）有限公司 | Growth detection device of single crystal silicon rod |
| CN104328494A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
-
2015
- 2015-02-11 CN CN201510075236.6A patent/CN105986312B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103422159A (en) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | Impurity removing method in pulling single crystal production process |
| CN103074681A (en) * | 2013-02-17 | 2013-05-01 | 英利集团有限公司 | Secondary feeding method |
| CN203569241U (en) * | 2013-11-29 | 2014-04-30 | 英利能源（中国）有限公司 | Growth detection device of single crystal silicon rod |
| CN104328494A (en) * | 2014-11-14 | 2015-02-04 | 邢台晶龙电子材料有限公司 | Production method of solar grade czochralski monocrystalline silicon |
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