CN105981149B - 量子点阵列和量子点超晶格的制备方法 - Google Patents

量子点阵列和量子点超晶格的制备方法 Download PDF

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CN105981149B
CN105981149B CN201480074944.1A CN201480074944A CN105981149B CN 105981149 B CN105981149 B CN 105981149B CN 201480074944 A CN201480074944 A CN 201480074944A CN 105981149 B CN105981149 B CN 105981149B
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quantum dot
substrate surface
silar
pbs
cdse
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CN105981149A (zh
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S·金格
E·卡诺瓦斯迪亚茨
M·博恩
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Toyota Motor Corp
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Toyota Motor Europe NV SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201480074944.1A 2014-02-06 2014-02-06 量子点阵列和量子点超晶格的制备方法 Active CN105981149B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/052362 WO2015117659A1 (en) 2014-02-06 2014-02-06 Process for preparing quantum dot array and quantum dot superlattice

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CN105981149A CN105981149A (zh) 2016-09-28
CN105981149B true CN105981149B (zh) 2019-11-29

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US (1) US9917218B2 (https=)
JP (1) JP6463773B2 (https=)
CN (1) CN105981149B (https=)
WO (1) WO2015117659A1 (https=)

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CN111384214B (zh) * 2018-12-28 2021-07-23 Tcl科技集团股份有限公司 一种量子阱结构的制备方法和量子阱结构
US12185018B2 (en) * 2019-06-28 2024-12-31 Apple Inc. Stacked electromagnetic radiation sensors for visible image sensing and infrared depth sensing, or for visible image sensing and infrared image sensing
CN110702744B (zh) * 2019-10-17 2020-06-19 山东交通学院 一种专用于船体尾气的处理装置与感测系统
CN112811473B (zh) * 2021-01-06 2022-09-30 安徽师范大学 纳米手环三氧化二铁/石墨烯量子点/二氧化锡核壳结构复合材料及其制备方法和电池应用

Citations (4)

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CN101312218A (zh) * 2008-04-18 2008-11-26 天津大学 连续离子层吸附反应法制备铜铟硒化合物薄膜的方法
TW201133831A (en) * 2010-03-26 2011-10-01 Fujifilm Corp Method for producing nano particles, method for producing quantum dot, photoelectric conversion device and solar cell
US20110241042A1 (en) * 2010-04-02 2011-10-06 Miin-Jang Chen Nanocrystal-based optoelectronic device and method of fabricating the same
CN102251235A (zh) * 2011-07-07 2011-11-23 中南大学 一种铜锌锡硫薄膜的制备方法

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KR101172534B1 (ko) * 2010-02-18 2012-08-10 한국화학연구원 전고체상 이종 접합 태양전지
US8609553B2 (en) * 2011-02-07 2013-12-17 Micron Technology, Inc. Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures
US20130042906A1 (en) * 2011-08-19 2013-02-21 Ming-Way LEE Quantum-dot sensitized solar cell
AU2013222470A1 (en) * 2012-02-21 2014-08-14 Massachusetts Institute Of Technology Spectrometer device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101312218A (zh) * 2008-04-18 2008-11-26 天津大学 连续离子层吸附反应法制备铜铟硒化合物薄膜的方法
TW201133831A (en) * 2010-03-26 2011-10-01 Fujifilm Corp Method for producing nano particles, method for producing quantum dot, photoelectric conversion device and solar cell
US20110241042A1 (en) * 2010-04-02 2011-10-06 Miin-Jang Chen Nanocrystal-based optoelectronic device and method of fabricating the same
CN102251235A (zh) * 2011-07-07 2011-11-23 中南大学 一种铜锌锡硫薄膜的制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《Effect of ZnS coatings on the enhancement of the photovoltaic properties of PbS quantum dot-sensitized solar cells》;Sojiro Hachiya,et al.;《J. Appl. Phys.》;20120525;第111卷;104315-1-104315-4 *

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JP2017515294A (ja) 2017-06-08
JP6463773B2 (ja) 2019-02-06
CN105981149A (zh) 2016-09-28
US9917218B2 (en) 2018-03-13
WO2015117659A1 (en) 2015-08-13
US20170162733A1 (en) 2017-06-08

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