CN105974732A - Embossing mask plate and nano-embossing method - Google Patents
Embossing mask plate and nano-embossing method Download PDFInfo
- Publication number
- CN105974732A CN105974732A CN201610596067.5A CN201610596067A CN105974732A CN 105974732 A CN105974732 A CN 105974732A CN 201610596067 A CN201610596067 A CN 201610596067A CN 105974732 A CN105974732 A CN 105974732A
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- CN
- China
- Prior art keywords
- embossing
- nano
- mask version
- platen
- stamp mask
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
Abstract
The invention provides an embossing mask plate and a nano-embossing method and belongs to the technical field of embossing. The embossing mask plate comprises an embossing plate and a light shielding layer. The embossing plate is provided with a work region and a peripheral region surrounding the work region. The light shielding layer is arranged in the peripheral region of the embossing plate. Due to the fact that the light shielding layer is arranged in the peripheral region of the embossing plate of the embossing mask plate, when large-area nano-embossing is conducted through the embossing mask plate, embossing glue at the position corresponding to the peripheral region of the embossing plate is shielded by the light shielding layer, the embossing glue is not cured in the ultraviolet curing process, only embossing glue at the position corresponding to the work region of the embossing plate is cured, the non-cured embossing glue is washed away in the developing process, embossing can be conducted at the completely-attached position in the next embossing process, the size of a splicing seam only depends on alignment precision and cannot be affected by the embossing glue at the position corresponding to the peripheral region of the embossing plate in the last embossing process, the splicing seam can be effectively reduced, and splicing precision is improved.
Description
Technical field
The invention belongs to stamping technique field, be specifically related to a kind of imprint mask version and nanometer
Method for stamping.
Background technology
The manufacturing cost of the high-precision nano impression formboard of large area is expensive, how to reduce mould
Version cost of manufacture is always the problem of people's research, to this end, 1999, Willson etc. opens
Send out stepping-flash of light ultraviolet stamping technology.Generally nano impression can only replicate and theastencil region
Structure of the same size, stepping-flash of light ultraviolet stamping nano impression of one area the least
Masterplate, by multi-impression, mobile alignment splicing, it is achieved answering of large-area nano structure
System.
There is the problem that splicing precision is not enough in stepping-flash of light ultraviolet stamping, this is due to impressing
During can be expelled from unnecessary photoresist, outside coining pattern region, have inactive area,
Upper once imprint time, will result in bigger splicing seams, this be by improve alignment essence
Degree cannot solve problem.
Summary of the invention
It is contemplated that at least solve one of technical problem present in prior art, it is provided that a kind of
Imprint mask version that splicing seams is little and nano-imprinting method.
Solve the technology of the present invention problem and be employed technical scheme comprise that a kind of stamp mask version,
Including platen, described platen has working region and is surrounded described working region
Marginal area；Described stamp mask version also includes the marginal area being arranged on described platen
Light shield layer.
Preferably, the side in the working region of described platen has nano-pattern list
Unit；Described light shield layer and described nano-pattern unit are positioned at the same side.
Preferably, the side in the working region of described platen has nano-pattern list
Unit；Described light shield layer is positioned at the marginal area of described platen and deviates from described nano-pattern list
The side of unit.
Preferably, the material of described platen is transparent material.
It may further be preferable that described transparent material includes quartz.
Preferably, the material of described light shield layer is metal.
It may further be preferable that described metal include in chromium, molybdenum, aluminum any number of or
Multiple combination.
Solve the technology of the present invention problem and be employed technical scheme comprise that a kind of nano impression side
Method, it uses above-mentioned stamp mask version；Described method for stamping includes:
One substrate, and coating impressing glue in substrate are provided；
Described stamp mask version is directed at described substrate pressure, so that described stamp mask version
It is stamped on described impressing glue；
By ultraviolet light, described stamp mask version is irradiated, so that described working region
The impressing adhesive curing of position；
Described stamp mask version is separated with described impressing glue；
Remove uncured impressing glue, complete an imprinting cycles；
Repeat described imprinting cycles several times, so that forming nano-pattern battle array in described substrate
Row.
Preferably, the material of described impressing glue is ultraviolet photocureable material.
Preferably, described ultraviolet photocureable material is siliceous ultraviolet photocureable material.
There is advantages that
Owing to the platen marginal area of the imprint mask version in the present invention arranges light shield layer,
Therefore at the UV curing process being carried out large-area nano impressing by this imprint mask version
In, it is blocked layer with the impressing glue of the marginal area correspondence position of platen and blocks, thus
UV curing process will not be cured, only with platen working region correspondence position
Impressing glue be cured, wash uncured impressing glue off at developing process, i.e. remove and press
The impressing glue of printing forme marginal area correspondence position so that useful nano-pattern unit is able to
Retain, can imprint in the position fitted completely in upper once moulding process, spell
The size of seam is solely dependent upon aligning accuracy, will not be subject in last moulding process and pressure
The impressing glue impact of the marginal area correspondence position of printing forme, can effectively reduce splicing seams,
Improve splicing precision.
Accompanying drawing explanation
Fig. 1 is the plane graph of the stamp mask plate in embodiments of the invention 1；
Fig. 2 is a kind of schematic cross-section of the stamp mask plate of embodiments of the invention 1；
Fig. 3 is the another kind of schematic cross-section of the stamp mask plate of embodiments of the invention 1；
Fig. 4 is the process chart of the nano-imprinting method of the 2 of embodiments of the invention；
Fig. 5 is the flow chart of the nano-imprinting method of the 2 of embodiments of the invention.
Wherein reference is: 1, platen；2, light shield layer.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, knot below
Close the drawings and specific embodiments the present invention is described in further detail.
Embodiment 1:
As it is shown in figure 1, the present embodiment provides one in large-area nano method for stamping
Imprint mask version should, this mask plate stamp mask version includes platen 1, this platen 1
There is working region and the marginal area surrounded described working region；Described stamp mask
Version also includes the light shield layer 2 being arranged on the marginal area of described platen 1.
Owing to platen 1 marginal area in the imprint mask version of the present embodiment arranges shading
Layer 2, therefore in the ultra-violet curing mistake being carried out large-area nano impressing by this imprint mask version
Cheng Zhong, is blocked layer 2 with the impressing glue of the marginal area correspondence position of platen 1 and blocks,
Thus will not be cured in UV curing process, only with platen 1 working region pair
The impressing glue answering position is cured, and washes uncured impressing glue off at developing process, i.e. goes
Except the impressing glue with platen 1 marginal area correspondence position so that useful nano-pattern
Unit is retained, and can carry out in the position fitted completely in upper once moulding process
Impressing, the size of splicing seams is solely dependent upon aligning accuracy, will not be imprinted by the last time
With the impressing glue impact of the marginal area correspondence position of platen 1 in journey, can effectively subtract
Little splicing seams, improves splicing precision.
Wherein, the light shield layer 2 in the imprint mask version of the present embodiment can be arranged on and press
The side with nano-pattern unit of printing forme 1, as shown in Figure 2；Or, light shield layer 2
The marginal area being positioned at described platen 1 deviates from the side of described nano-pattern unit, as
Shown in Fig. 3.
Wherein, the material of platen 1 is transparent material.Preferably, platen 1 uses
Quartz material.Other materials can certainly be used.
Wherein, the material of light shield layer 2 is metal.Preferably, light shield layer 2 be chromium, molybdenum,
An any number of or multiple combination in aluminum.It is of course also possible to use other metal materials
Embodiment 2:
Shown in Figure 4 and 5, the present embodiment provides a kind of nano-imprinting method, at this
Method uses the imprint mask version in embodiment 1.This nano-imprinting method specifically includes
Following steps:
S1, provide a substrate, and coating impressing glue in substrate.
Concrete, in substrate, by spin coating technique, impressing glue is coated in substrate
On.Wherein, impressing glue is ultraviolet photocureable material, and the most siliceous ratio is higher, viscosity
Ratio is relatively low, and ultra-violet curing required dosage is little, the material that etch resistance is strong.S2, by described
Stamp mask version is directed at described substrate pressure, so that described stamp mask version is stamped into described
On impressing glue.
Concrete, in this step, first, it is right first imprint mask version and substrate to be carried out
Position；Afterwards, imprint mask version is pressed, by stamp mask version by gas or solid
Nano-pattern unit be stamped on the impressing glue of substrate.
S3, by ultraviolet light, described stamp mask version is irradiated, so that described work
The impressing adhesive curing of the position in region.
Concrete, owing to the working region of imprint mask version is without light shield layer 2, therefore work as purple
Outer light is imprinted with mask plate when exposing to imprint glue so that impressing glue and imprint mask version
The impressing glue of working region correspondence position be cured.Marginal zone due to imprint mask version
Territory arranges light shield layer 2, hence in so that impressing glue laminated is corresponding with the marginal area of print mask plate
Position will not be irradiated by ultraviolet light, thus this partially embossed glue will not be cured.
S4, by stamp mask version with impressing glue separate.
In this step, namely stamp mask version is taken out from impressing glue, now press
It has been stamped nano-pattern unit on print glue.
S5, remove uncured impressing glue, complete an imprinting cycles.
Concrete, by developing process, remove position corresponding with the marginal area printing mask plate
The impressing glue put, so far completes an imprinting cycles.
S6, repeat described imprinting cycles several times, so that forming nanometer figure in described substrate
Case array.
Owing to the impressing in applying embodiment 1 at the nano-imprinting method of the present embodiment is covered
Film version, i.e. platen 1 marginal area in imprint mask version are provided with light shield layer 2, therefore
In the UV curing process being carried out large-area nano impressing by this imprint mask version, with
The impressing glue of the marginal area correspondence position of platen 1 is blocked layer 2 and blocks, thus
UV curing process will not be cured, only with platen 1 working region correspondence position
Impressing glue be cured, wash uncured impressing glue off at developing process, i.e. remove and press
The impressing glue of printing forme 1 marginal area correspondence position so that useful nano-pattern unit obtains
To retain, can imprint in the position fitted completely in upper once moulding process,
The size of splicing seams is solely dependent upon aligning accuracy, will not by last moulding process with
The impressing glue impact of the marginal area correspondence position of platen 1, can effectively reduce splicing
Seam, improves splicing precision.
Explanation is needed, formed in nano-imprinting method in the present embodiment at this
Nano-pattern array can also be as the mask plate of a big type, by this mask plate to pressure
Print glue imprints, and is formed identical with the nano-pattern array formed in step S1～S6
Pattern, it is not necessary to multi-impression, the most just can complete nano-pattern array, the most permissible
Improve production efficiency.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present
And the illustrative embodiments used, but the invention is not limited in this.For ability
For those of ordinary skill in territory, in the situation without departing from spirit and substance of the present invention
Under, various modification and improvement can be made, these modification and improvement are also considered as the present invention's
Protection domain.
Claims (10)
1. a stamp mask version, including platen, it is characterised in that described platen
There is working region and the marginal area surrounded described working region；Described stamp mask
Version also includes the light shield layer being arranged on the marginal area of described platen.
Stamp mask version the most according to claim 1, it is characterised in that described
The side of the working region of platen has nano-pattern unit；Described light shield layer is with described
Nano-pattern unit is positioned at the same side.
Stamp mask version the most according to claim 1, it is characterised in that described
The side of the working region of platen has nano-pattern unit；Described light shield layer is positioned at institute
The marginal area stating platen deviates from the side of described nano-pattern unit.
Stamp mask version the most according to claim 1, it is characterised in that described pressure
The material of printing forme is transparent material.
Stamp mask version the most according to claim 4, it is characterised in that described
Bright material includes quartz.
Stamp mask version the most according to claim 1, it is characterised in that described screening
The material of photosphere is metal.
Stamp mask version the most according to claim 6, it is characterised in that described gold
Belong to any number of or multiple combination including in chromium, molybdenum, aluminum.
8. a nano-imprinting method, it is characterised in that use in claim 1-7 and appoint
One described stamp mask version；Described method for stamping includes:
One substrate, and coating impressing glue in substrate are provided；
Described stamp mask version is directed at described substrate pressure, so that described stamp mask version
It is stamped on described impressing glue；
By ultraviolet light, described stamp mask version is irradiated, so that described working region
The impressing adhesive curing of position；
Described stamp mask version is separated with described impressing glue；
Remove uncured impressing glue, complete an imprinting cycles；
Repeat described imprinting cycles several times, so that forming nano-pattern battle array in described substrate
Row.
Nano-imprinting method the most according to claim 8, it is characterised in that described
The material of impressing glue is ultraviolet photocureable material.
Nano-imprinting method the most according to claim 9, it is characterised in that institute
Stating ultraviolet photocureable material is siliceous ultraviolet photocureable material..
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596067.5A CN105974732A (en) | 2016-07-26 | 2016-07-26 | Embossing mask plate and nano-embossing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610596067.5A CN105974732A (en) | 2016-07-26 | 2016-07-26 | Embossing mask plate and nano-embossing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105974732A true CN105974732A (en) | 2016-09-28 |
Family
ID=56950859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610596067.5A Pending CN105974732A (en) | 2016-07-26 | 2016-07-26 | Embossing mask plate and nano-embossing method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107179620A (en) * | 2017-06-07 | 2017-09-19 | 京东方科技集团股份有限公司 | The preparation method of ultra thin substrate bonding structure and preparation method thereof, display device |
| CN107357133A (en) * | 2017-09-15 | 2017-11-17 | 京东方科技集团股份有限公司 | Photoetching agent pattern forming method and impressing mould |
| CN108277454A (en) * | 2018-04-23 | 2018-07-13 | 京东方科技集团股份有限公司 | Fine mask plate and preparation method thereof |
| CN108445711A (en) * | 2018-03-13 | 2018-08-24 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN109188863A (en) * | 2018-11-05 | 2019-01-11 | 京东方科技集团股份有限公司 | The method of film pattern |
| CN111061124A (en) * | 2019-12-23 | 2020-04-24 | 杭州欧光芯科技有限公司 | Ultraviolet curing nano-imprinting mold with cutting channel and method |
| CN111610694A (en) * | 2020-06-22 | 2020-09-01 | 京东方科技集团股份有限公司 | Manufacturing method of embossing template and embossing template |
| CN111624851A (en) * | 2020-06-16 | 2020-09-04 | 京东方科技集团股份有限公司 | Imprint template and preparation method thereof |
| CN112074784A (en) * | 2018-03-19 | 2020-12-11 | 应用材料公司 | Method and apparatus for producing seamless large-area imprints |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107179620A (en) * | 2017-06-07 | 2017-09-19 | 京东方科技集团股份有限公司 | The preparation method of ultra thin substrate bonding structure and preparation method thereof, display device |
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| CN108445711A (en) * | 2018-03-13 | 2018-08-24 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
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| CN112074784A (en) * | 2018-03-19 | 2020-12-11 | 应用材料公司 | Method and apparatus for producing seamless large-area imprints |
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| CN108277454A (en) * | 2018-04-23 | 2018-07-13 | 京东方科技集团股份有限公司 | Fine mask plate and preparation method thereof |
| CN109188863A (en) * | 2018-11-05 | 2019-01-11 | 京东方科技集团股份有限公司 | The method of film pattern |
| CN109188863B (en) * | 2018-11-05 | 2021-11-26 | 京东方科技集团股份有限公司 | Method for patterning film layer |
| CN111061124A (en) * | 2019-12-23 | 2020-04-24 | 杭州欧光芯科技有限公司 | Ultraviolet curing nano-imprinting mold with cutting channel and method |
| CN111624851A (en) * | 2020-06-16 | 2020-09-04 | 京东方科技集团股份有限公司 | Imprint template and preparation method thereof |
| CN111610694A (en) * | 2020-06-22 | 2020-09-01 | 京东方科技集团股份有限公司 | Manufacturing method of embossing template and embossing template |
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Application publication date: 20160928 |
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