CN107179620A - The preparation method of ultra thin substrate bonding structure and preparation method thereof, display device - Google Patents
The preparation method of ultra thin substrate bonding structure and preparation method thereof, display device Download PDFInfo
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- CN107179620A CN107179620A CN201710423579.6A CN201710423579A CN107179620A CN 107179620 A CN107179620 A CN 107179620A CN 201710423579 A CN201710423579 A CN 201710423579A CN 107179620 A CN107179620 A CN 107179620A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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Abstract
The present invention discloses a kind of ultra thin substrate bonding structure and its manufacture method, the preparation method of display device, it is related to display technology field, fabrication cycle and cost of manufacture when making the display device being thinned for reducing, prevent from causing environmental pollution, and make to realize good fit between ultra thin substrate and carrier substrate.The ultra thin substrate bonding structure, including the carrier substrate and ultra thin substrate that laminating is set, wherein, the side of carrier substrate towards ultra thin substrate is formed with micro-nano structure.The side of carrier substrate towards ultra thin substrate is formed with micro-nano structure, and ultra thin substrate is fitted by micro-nano structure with carrier substrate, makes to realize good fit between ultra thin substrate and carrier substrate；When making display device, dot structure is formed on ultra thin substrate, then separates ultra thin substrate with carrier substrate, complete the making of display device, reduced fabrication cycle and cost of manufacture when making display device, prevent from causing environmental pollution.The present invention is applied to the making of display device.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of ultra thin substrate bonding structure and its manufacture method, display
The preparation method of device.
Background technology
Display device is that one kind is used to show word, numeral, symbol, picture, or by word, numeral, symbol and picture
In the device of the picture such as image that is formed of at least two combinations, provide larger convenience for the life of people, work.With aobvious
Show the development of technology, slimming is an important directions of display device development, and this is accomplished by the underlay substrate of display device
It is made as far as possible thin (for example, less than or equal to 0.15mm).
At present, when making display device (such as the display device that thickness is 0.4mm) of slimming, generally first provide thick
The thicker underlay substrate of degree (such as thickness is 0.5mm underlay substrates), then forms dot structure on the underlay substrate, is formed
The thicker display device of thickness, is then carried out using reduction process (such as chemical reduction technique) underlay substrate thicker to thickness
It is thinned, the thicker underlay substrate of thickness is thinned to required thickness (such as 0.15mm), completes the display device of slimming
Make.However, when making display device using aforesaid way, due to after the thicker display device of thickness is formed, in addition it is also necessary to right
The thicker underlay substrate of thickness is thinned so that fabrication cycle and cost of manufacture when making the display device of slimming increase
Plus, thereby increases and it is possible to cause environmental pollution.
, in the prior art, can also be in the following way in order to solve the above problems：One ultra thin substrate and carrier are provided
Substrate, then fits together ultra thin substrate and carrier substrate, ultra thin substrate bonding structure is formed, then on ultra thin substrate
Each functional film layer is formed, display device is formed, then ultra thin substrate and carrier substrate are peeled off, the display device of slimming is completed
Making.Wherein, in existing ultra thin substrate bonding structure, ultra thin substrate generally realizes ultra-thin base with carrier substrate using hydroxyl
Plate is fitted with carrier substrate.However, due to the limitation of hydroxyl quantity, in existing ultra thin substrate bonding structure, ultra thin substrate
Good fit generally can not be realized between carrier substrate.
The content of the invention
It is an object of the invention to provide a kind of ultra thin substrate bonding structure, the display device of slimming is made for reducing
When fabrication cycle and cost of manufacture, prevent from causing environmental pollution, and make to realize between ultra thin substrate and carrier substrate good
Laminating.
To achieve these goals, the present invention provides following technical scheme：
A kind of ultra thin substrate bonding structure, including the carrier substrate and ultra thin substrate that laminating is set, wherein, the carrier base
The side of plate towards the ultra thin substrate is formed with micro-nano structure.
Preferably, micro-nano structure formation in the carrier substrate towards on the surface of the ultra thin substrate.
Preferably, the carrier substrate and the ultra thin substrate are fitted setting by laminating layer, and the micro-nano structure is formed
In the laminating layer towards on the surface of the ultra thin substrate.
Preferably, the material of the laminating layer is impression materials.
Preferably, along the depth direction of the micro-nano structure, the raised cross sectional shape of the micro-nano structure is rectangular；
Raised a height of 200nm~500nm；Raised a width of 50nm~200nm；
The projection of the micro-nano structure is in periodic arrangement, and the raised arrangement cycle is 2 μm~5 μm.
Preferably, along the depth direction of the micro-nano structure, the raised cross sectional shape of the micro-nano structure is in " convex " shape；
It is described it is raised include expanded letter portion and the narrow body portion in the expanded letter portion, wherein, the expanded letter portion it is a height of
100nm~300nm, a width of 100nm~400nm in the expanded letter portion；A height of 50nm~150nm in the narrow body portion is described narrow
A width of 50nm~200nm in body portion；
The projection of the micro-nano structure is in periodic arrangement, and the raised arrangement cycle is 2 μm~5 μm.
In the ultra thin substrate bonding structure that the present invention is provided, the side of carrier substrate towards ultra thin substrate is formed with micro-nano knot
Structure, thus ultra thin substrate contacts with micro-nano structure, ultra thin substrate is fitted by micro-nano structure with carrier substrate, when making slimming
Display device when, form dot structure on the ultra thin substrate of ultra thin substrate bonding structure that the present invention is provided, then will be super
Thin substrate is separated with carrier substrate, you can complete the making of the display device of slimming, thicker with completing thickness in the prior art
Display device making after again the underlay substrate thicker to thickness be thinned and compare, the display for making slimming can be reduced
Fabrication cycle and cost of manufacture during device, prevent from causing environmental pollution；Meanwhile, the ultra thin substrate bonding structure that the present invention is provided
In, ultra thin substrate is fitted by micro-nano structure with carrier substrate, with realizing ultra thin substrate and carrier using hydroxyl in the prior art
Baseplate-laminating is compared, and micro-nano structure provides larger adhesive force for ultra thin substrate with fitting for carrier substrate, prevents ultra thin substrate
Occur sepage between carrier substrate or the phenomenon such as separate, make to realize good fit between ultra thin substrate and carrier substrate.
It is an object of the invention to provide a kind of preparation method of ultra thin substrate bonding structure, slimming is made for reducing
Display device when fabrication cycle and cost of manufacture, prevent from causing environmental pollution, and make between ultra thin substrate and carrier substrate
Realize good laminating.
To achieve these goals, the present invention provides following technical scheme：
A kind of preparation method of ultra thin substrate bonding structure as described in above-mentioned technical scheme, including：
Carrier substrate and ultra thin substrate are provided；
Micro-nano structure is formed in the side of the carrier substrate；
The ultra thin substrate is fitted with the side that the carrier substrate forms the micro-nano structure.
Preferably, include the step of the side of the carrier substrate forms micro-nano structure：
Embossed layer is formed on the carrier substrate；
By the impression formboard with the structure matched with the micro-nano structure be placed in the carrier substrate be formed with it is described
The side of embossed layer, and be aligned；
The impression formboard and the embossed layer are pressed, and use illumination methods or mode of heating, makes the embossed layer
Solidification；
The impression formboard is separated with the embossed layer；
The embossed layer is performed etching, carrier substrate area corresponding with the groove of the micro-nano structure is exposed
Domain；
The exposed carrier substrate is performed etching；
Remove the embossed layer of residual.
Preferably, include the step of the side of the carrier substrate forms micro-nano structure：
Laminating layer is formed on the carrier substrate；
By the impression formboard with the structure matched with the micro-nano structure be placed in the carrier substrate be formed with it is described
The side of laminating layer, and be aligned；
The impression formboard and the laminating layer are pressed, and use illumination methods or mode of heating, makes the laminating layer
Solidification；
The impression formboard is separated with the laminating layer, the micro-nano structure is formed on the laminating layer.
The preparation method of the ultra thin substrate bonding structure is with above-mentioned ultra thin substrate bonding structure relative to prior art institute
Have the advantage that identical, will not be repeated here.
It is an object of the invention to provide a kind of preparation method of display device, the display dress of slimming is made for reducing
Fabrication cycle and cost of manufacture when putting, prevent from causing environmental pollution, and make to realize well between ultra thin substrate and carrier substrate
Laminating.
To achieve these goals, the present invention provides following technical scheme：
A kind of preparation method of display device, includes the making of the ultra thin substrate bonding structure as described in above-mentioned technical scheme
Method.
Further, it is described aobvious after the step of ultra thin substrate being fitted with the side of carrier substrate formation micro-nano structure
The preparation method of showing device also includes：
Dot structure is formed on the ultra thin substrate；
The ultra thin substrate and the carrier substrate are peeled off.
The preparation method of the display device and the preparation method of above-mentioned ultra thin substrate bonding structure are relative to prior art
Have the advantage that identical, will not be repeated here.
Brief description of the drawings
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes the part of the present invention, this hair
Bright schematic description and description is used to explain the present invention, does not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is a kind of schematic diagram of ultra thin substrate bonding structure provided in an embodiment of the present invention；
Fig. 2 is the schematic diagram of another ultra thin substrate bonding structure provided in an embodiment of the present invention；
Fig. 3 is a kind of schematic diagram of micro-nano structure in the embodiment of the present invention；
Fig. 4 is the schematic diagram of another micro-nano structure in the embodiment of the present invention；
Fig. 5 is the flow chart of the preparation method of ultra thin substrate bonding structure provided in an embodiment of the present invention；
The flow chart one that Fig. 6 is step S200 in Fig. 5；
The process sequence diagram that Fig. 7 is step S200 in Fig. 6；
The flowchart 2 that Fig. 8 is step S200 in Fig. 5；
The process sequence diagram that Fig. 9 is step S200 in Fig. 8；
Figure 10 is the flow chart of the preparation method of display device provided in an embodiment of the present invention.
Reference：
10- carrier substrates, 20- ultra thin substrates,
30- micro-nano structures, 31- is raised,
311- expanded letters portion, the narrow body portions of 312-,
32- grooves, 40- laminating layers,
50- embossed layers, 60- impression formboards.
Embodiment
In order to further illustrate ultra thin substrate bonding structure provided in an embodiment of the present invention and preparation method thereof, display device
Preparation method, be described in detail with reference to Figure of description.
Fig. 1 or Fig. 2 is referred to, ultra thin substrate bonding structure provided in an embodiment of the present invention includes the carrier base that laminating is set
Plate 10 and ultra thin substrate 20, wherein, the side of carrier substrate 10 towards ultra thin substrate 20 is formed with micro-nano structure 30.
Specifically, please continue to refer to Fig. 1 or Fig. 2, ultra thin substrate bonding structure provided in an embodiment of the present invention is will be ultra-thin
Substrate 20 is fitted in the structure on carrier substrate 10, can to facilitate the follow-up structure such as formation dot structure on ultra thin substrate 20
For preparing the display device of slimming, wherein, ultra thin substrate 20 and carrier substrate 10 can be glass substrate.The present invention
The ultra thin substrate bonding structure that embodiment is provided includes the carrier substrate 10 and ultra thin substrate 20 that laminating is set, the court of carrier substrate 10
The side formation micro-nano that micro-nano structure 30, i.e. carrier substrate 10 are fitted with ultra thin substrate 20 is formed with to the side of ultra thin substrate 20
Structure 30, thus ultra thin substrate 20 directly contacts with micro-nano structure 30, realizes the good patch of ultra thin substrate 20 and carrier substrate 10
Close.
From the foregoing, in ultra thin substrate bonding structure provided in an embodiment of the present invention, carrier substrate 10 is towards ultra-thin base
The side of plate 20 is formed with micro-nano structure 30, thus ultra thin substrate 20 is contacted with micro-nano structure 30, and ultra thin substrate 20 passes through micro-nano
Structure 30 is fitted with carrier substrate 10, when making the display device of slimming, in ultra thin substrate provided in an embodiment of the present invention
Dot structure is formed on the ultra thin substrate 20 of bonding structure, then separates ultra thin substrate 20 with carrier substrate 10, you can is completed
The making of the display device of slimming, it is thicker to thickness again after the making with completing the thicker display device of thickness in the prior art
Underlay substrate carry out be thinned compare, can reduce make slimming display device when fabrication cycle and cost of manufacture, prevent
Major structure is into environmental pollution；Meanwhile, in ultra thin substrate bonding structure provided in an embodiment of the present invention, ultra thin substrate 20 passes through micro-nano knot
Structure 30 is fitted with carrier substrate 10, with realizing ultra thin substrate 20 using hydroxyl in the prior art compared with carrier substrate 10 is fitted,
Micro-nano structure 30 provides larger adhesive force for ultra thin substrate 20 with fitting for carrier substrate 10, prevents ultra thin substrate 20 and carrier
Occur the phenomenons such as sepage or separation between substrate 10, make to realize good fit between ultra thin substrate 20 and carrier substrate 10.
In addition, when formation pixel knot on the ultra thin substrate 20 in ultra thin substrate bonding structure provided in an embodiment of the present invention
After structure, that is, after the formation for completing display device, when ultra thin substrate 20 is separated with carrier substrate 10, it is only necessary to use stripping blade
Ultra thin substrate 20 is separated with carrier substrate 10, be more than when the projection 31 of micro-nano structure 30 and the angle of ultra thin substrate 20 or
During equal to 30 °, ultra thin substrate 20 can be separated easily with carrier substrate 10, therefore, ultra thin substrate provided in an embodiment of the present invention
The separation process of bonding structure is easier to.
It is noted that ultra thin substrate bonding structure provided in an embodiment of the present invention can be used for the liquid crystal of slimming
In the manufacturing process of showing device, organic electroluminescent LED (the Organic Light- of slimming can also be applied to
Emitting Diode, OLED) display device manufacturing process in, can also be applied to slimming other forms display device
Manufacturing process in.In actual applications, ultra thin substrate bonding structure provided in an embodiment of the present invention can be also used for curved surface show
The manufacturing process of showing device.
In the above-described embodiments, micro-nano structure 30 is formed in carrier substrate 10 towards the side of ultra thin substrate 20, in reality
In, please continue to refer to Fig. 1, micro-nano structure 30 can be formed directly into carrier substrate 10 towards the surface of ultra thin substrate 20
On, it is so designed that, can further improves the steadiness that ultra thin substrate 20 is fitted by micro-nano structure 30 with carrier substrate 10；Or
Person, please continue to refer to Fig. 2, can set laminating layer 40, micro-nano structure 30 is formed between carrier substrate 10 and ultra thin substrate 20
In laminating layer 40 towards on the surface of ultra thin substrate 20, now, ultra thin substrate 20 is contacted with the micro-nano structure 30 on laminating layer 40,
And fitted by laminating layer 40 with carrier substrate 10, wherein, it is impression materials that the material of laminating layer 40, which can be selected, is so set
Meter, can avoid forming micro-nano structure 30 on carrier substrate 10 and causing the destruction of carrier substrate 10, and carrier substrate 10 can
To repeatedly use, the cost of manufacture during display device that further reduction making is thinned.
In the above-described embodiments, micro-nano structure 30 generally include multiple raised 31 and positioned at two adjacent projections 31 it
Between groove 32, in actual applications, the structure of projection 31 can be to be a variety of, for example, referring to Fig. 3, along micro-nano structure 30
Depth direction, the cross sectional shape of the projection 31 of micro-nano structure 30 can be with rectangular, and now, the high H1 of projection 31 can be
200nm~500nm, for example, the high H1 of projection 31 can be 200nm, 350nm, 500nm etc., the wide D1 of projection 31 can be
50nm~200nm, for example, the wide D1 of projection 31 can for 50nm, 100nm, 200nm etc., wherein, setting projection 31 height and
, it is necessary to ensure that projection 31 has larger depth-width ratio, i.e. the ratio of the Gao Yukuan of projection 31 is larger when wide.
Please continue to refer to Fig. 3, along the depth direction of micro-nano structure 30, the cross sectional shape of the projection 31 of micro-nano structure 30 is in square
During shape, the projection 31 of micro-nano structure 30 can be in periodic arrangement, and the arrangement cycle T 1 of projection 31 can be 2 μm~5 μm, raised
31 arrangement cycle T 1 may be considered the wide sum of the wide groove 32 with adjacent to the projection 31 of a projection 31 in Fig. 3,
The arrangement cycle T 1 of projection 31 can be 2 μm, 3 μm, 4 μm, 5 μm etc..
Referring to Fig. 4, the structure of projection 31 can also be：Along the depth direction of micro-nano structure 30, micro-nano structure 30 it is convex
The cross sectional shape for playing 31 is in " convex " shape, i.e., along the depth direction of micro-nano structure 30, and the two of the section of the projection 31 of micro-nano structure 30
Side is respectively provided with step, and projection 31 can include expanded letter portion 311 and narrow body portion 312, and relatively narrow body portion 312 of expanded letter portion 311 is close to load
Structure base board 10, wherein, the high H2 in expanded letter portion 311 can be 100nm~300nm, for example, the high H2 in expanded letter portion 311 can be
100nm, 200nm, 300nm etc., the wide D2 in expanded letter portion 311 can be 100nm~400nm, for example, the wide D2 in expanded letter portion 311 can
Think 100nm, 200nm, 300nm, 400nm etc., the high H3 in narrow body portion 312 is 50nm~150nm, for example, the height in narrow body portion 312
H3 can be 50nm, 100nm, 150nm etc., and the wide D3 in narrow body portion 312 can be 50nm~200nm, for example, narrow body portion 312
Wide D3 can for 50nm, 100nm, 200nm etc., wherein, at the expanded letter portion 311 and narrow body portion 312 of setting projection 31, it is necessary to protect
Card projection 31 has larger depth-width ratio, it is believed that the high sum in the high and narrow body portion 312 in expanded letter portion 311, with expanded letter portion
311 wide ratio is larger.
Please continue to refer to Fig. 4, along the depth direction of micro-nano structure 30, the cross sectional shape of the projection 31 of micro-nano structure 30 is in
During " convex " shape, the projection 31 of micro-nano structure 30 can also be in periodic arrangement, and the arrangement cycle T 2 of projection 31 is 2 μm~5 μm, convex
The arrangement cycle T 2 for playing 31 may be considered the wide groove 32 with adjacent to the expanded letter portion 311 in an expanded letter portion 311 in Fig. 4
Wide sum, the arrangement cycle T 2 of projection 31 can be 2 μm, 3 μm, 4 μm, 5 μm etc..
Referring to Fig. 5, the embodiment of the present invention also provides a kind of ultra thin substrate bonding structure as described in above-mentioned embodiment
Preparation method, including：
Step S100, offer carrier substrate and ultra thin substrate.
Step S200, the side formation micro-nano structure in carrier substrate.
Step S300, the side of ultra thin substrate and carrier substrate formation micro-nano structure fitted.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.It is real especially for method
Apply for example, because it is substantially similar to constructive embodiment, so describing fairly simple, related part is referring to constructive embodiment
Part explanation.
It is noted that in the step s 100 there is provided carrier substrate and ultra thin substrate need through over cleaning, to prevent
There is impurity, foreign matter, steam etc. on carrier substrate and ultra thin substrate.
In the above-described embodiments, step S200, carrier substrate side formed micro-nano structure when, nanometer pressure can be used
The mode of print is formed, for example, micro-nano structure is located on carrier substrate, and micro-nano structure formation in carrier substrate towards ultra-thin
On the surface of substrate, referring to Fig. 6, step S200, carrier substrate side formed micro-nano structure can include：
Step S211, embossed layer is formed on carrier substrate.
Step S212, the impression formboard with the structure matched with micro-nano structure is placed in carrier substrate it is formed with impressing
The side of layer, and be aligned.
Step S213, impression formboard and embossed layer pressed, and use illumination methods or mode of heating, consolidate embossed layer
Change.
Step S214, impression formboard separated with embossed layer.
Step S215, embossed layer is performed etching, expose carrier substrate region corresponding with the groove of micro-nano structure.
Step S216, exposed carrier substrate is performed etching.
Step S217, the embossed layer for removing residual.
Specifically, Fig. 6 and Fig. 7 are referred to, step S211 can be first carried out, embossed layer 50 is formed on carrier substrate 10,
Wherein, the material of embossed layer 50 can be selected according to when solidifying embossed layer 50 in step S213 by the way of, example
Such as, when solidifying embossed layer 50 using illumination methods (such as ultraviolet light mode) in step S213, then embossed layer 50
Material can select the material by illumination curing, when solidifying embossed layer 50 using mode of heating in step S213, then imprint
The material of layer 50 can select the material by heat cure, and the formation of embossed layer 50 can be carried out using modes such as coatings；Then hold
Row step S212, is placed in carrier substrate 10 by impression formboard 60 and is formed with the side of embossed layer 50, and is aligned, wherein, making ide
Version 60 has the structure that matches with micro-nano structure 30 to be formed, and the structure includes lug boss and groove, the structure it is convex
The groove 32 of the portion of rising correspondence micro-nano structure 30, the projection 31 of the groove correspondence micro-nano structure 30 of the structure；Then step is performed
S213, impression formboard 60 is pressed with embossed layer 50, it can be understood as impression formboard 60 is pressed into embossed layer 50, and embossed layer 50 exists
In the presence of impression formboard 60, the structure matched with micro-nano structure 30 is formed, meanwhile, using illumination methods or mode of heating,
Solidify embossed layer 50, embossed layer 50 is maintained at the structure formed in the presence of impression formboard 60, for example, as shown in fig. 7,
Embossed layer 50 can be solidified using illumination methods, wherein, light can be shining into by the side of the dorsad embossed layer 50 of carrier substrate 10,
I.e. light is shining into as the lower section of the carrier substrate 10 shown in step 213 in Fig. 7, or, when impression block is transparent masterplate, light can
It is shining into the side by the dorsad embossed layer 50 of impression formboard 60；Then step S214 is performed, by 50 points of impression block and embossed layer
From carrying out stripping operation；Then step S215 is performed, embossed layer 50 is performed etching, specifically, to embossed layer 50 and micro-nano
The corresponding region of groove 32 of structure 30 is performed etching, corresponding with the groove 32 of micro-nano structure 30 to expose carrier substrate 10
Region；Then step S216 is performed, exposed carrier substrate 10 is performed etching, etching depth is then according to the convex of micro-nano structure 30
The height for playing 31 is set；Then step S217 is performed, the embossed layer 50 of residual is removed, completion forms micro- on carrier substrate 10
Micro-nano structure 30.
When micro-nano structure is located on laminating layer between carrier substrate and ultra thin substrate, and micro-nano structure formation is in laminating layer
When on towards the surface of ultra thin substrate, referring to Fig. 8, step S200, carrier substrate side formed micro-nano structure can wrap
Include：
Step S221, laminating layer is formed on carrier substrate.
Step S222, the impression formboard with the structure matched with micro-nano structure is placed in carrier substrate it is formed with and fit
The side of layer, and be aligned.
Step S223, impression formboard and laminating layer pressed, and use illumination methods or mode of heating, consolidate laminating layer
Change.
Step S224, impression formboard separated with laminating layer.
Specifically, Fig. 8 and Fig. 9 are referred to, step S221 can be first carried out, laminating layer 40 is formed on carrier substrate 10,
Wherein, the material of laminating layer 40 can be impression materials, and the material of laminating layer 40 can be according to making laminating layer 40 in step S223
Selected during solidification by the way of, illumination methods (such as ultraviolet light side is used in step S223 for example, working as
Formula) make laminating layer 40 solidify when, then the material of laminating layer 40 can select the material by illumination curing, be used when in step S223
When mode of heating makes the solidification of laminating layer 40, then the material of laminating layer 40 can select the material by heat cure, the shape of laminating layer 40
Into can using coating etc. mode carry out；Then step S222 is performed, impression formboard 60 is placed in carrier substrate 10 and is formed with patch
The side of layer 40 is closed, and is aligned, wherein, impression formboard 60 has the structure matched with micro-nano structure 30 to be formed, the knot
Structure includes lug boss and groove, the groove 32 of the lug boss correspondence micro-nano structure 30 of the structure, the groove correspondence of the structure
The projection 31 of micro-nano structure 30；Then step S223 is performed, impression formboard 60 is pressed with laminating layer 40, it can be understood as will press
Stamp version 60 presses to laminating layer 40, and laminating layer 40 forms the knot matched with micro-nano structure 30 in the presence of impression formboard 60
Structure, meanwhile, using illumination methods or mode of heating, solidify laminating layer 40, laminating layer 40 is maintained at the work of impression formboard 60
With lower formed structure, for example, as shown in figure 9, can solidify laminating layer 40 using illumination methods, wherein, light can be by
The side of the dorsad laminating layer 40 of carrier substrate 10 is shining into, i.e., light is shone as the lower section of the carrier substrate 10 shown in step 223 in Fig. 9
Enter, or, when impression block is transparent masterplate, light can be shining into by the side of the dorsad laminating layer 40 of impression formboard 60；Then
Step S224 is performed, impression block is separated with laminating layer 40, that is, carries out stripping operation, completion forms micro-nano on laminating layer 40
Structure 30.
When micro-nano structure is formed by the way of step S221 to step S224, with using step S211 to step S217's
Mode forms micro-nano structure and compared, the step of can saving multiple etching, thus can shorten making ultra thin substrate bonding structure
When fabrication cycle and cost of manufacture.
Referring to Fig. 10, the embodiment of the present invention also provides a kind of preparation method of display device, including such as above-mentioned embodiment
The preparation method of described ultra thin substrate bonding structure.
The preparation method of the display device and the preparation method of above-mentioned ultra thin substrate bonding structure are relative to prior art
Have the advantage that identical, will not be repeated here.
Please continue to refer to Figure 10, after the making for completing ultra thin substrate bonding structure, display dress provided in an embodiment of the present invention
The preparation method put also includes：
Step S400, dot structure is formed on ultra thin substrate.
Step S500, ultra thin substrate and carrier substrate peeled off.
Specifically, after the completing of ultra thin substrate bonding structure, dot structure is formed on ultra thin substrate, for example, working as
When making the liquid crystal display device of slimming, then using the conventional method for the liquid crystal display device for making slimming, in ultra-thin base
Corresponding dot structure is formed on plate, dot structure includes liquid crystal layer；Then, ultra thin substrate and carrier substrate are peeled off, citing
For, it is possible to use a vacuum absorption device adsorbs carrier substrate, and picture will be formed with using another vacuum absorption device
The ultra thin substrate absorption of plain structure, then hoe scaler is inserted between ultra thin substrate and carrier substrate, utilize two vacuum suctions
The effect of device and hoe scaler, when the angle between the projection and ultra thin substrate of micro-nano structure is more than or equal to 30 °, ultra-thin base
Plate can be separated easily with carrier substrate, after ultra thin substrate is separated with carrier substrate, then complete the display device of slimming
Make.
In the description of above-mentioned embodiment, specific features, structure, material or feature can be in any one or many
Combined in an appropriate manner in individual embodiment or example.
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (11)
1. a kind of ultra thin substrate bonding structure, it is characterised in that the carrier substrate and ultra thin substrate set including laminating, wherein,
The side of the carrier substrate towards the ultra thin substrate is formed with micro-nano structure.
2. ultra thin substrate bonding structure according to claim 1, it is characterised in that the micro-nano structure formation is carried described
Structure base board is towards on the surface of the ultra thin substrate.
3. ultra thin substrate bonding structure according to claim 1, it is characterised in that the carrier substrate and the ultra-thin base
Plate is fitted by laminating layer and set, and micro-nano structure formation is in the laminating layer towards on the surface of the ultra thin substrate.
4. ultra thin substrate bonding structure according to claim 3, it is characterised in that the material of the laminating layer is impressing material
Material.
5. ultra thin substrate bonding structure according to claim 1, it is characterised in that along the depth side of the micro-nano structure
To the raised cross sectional shape of the micro-nano structure is rectangular；
Raised a height of 200nm~500nm；Raised a width of 50nm~200nm；
The projection of the micro-nano structure is in periodic arrangement, and the raised arrangement cycle is 2 μm~5 μm.
6. ultra thin substrate bonding structure according to claim 1, it is characterised in that along the depth side of the micro-nano structure
To the raised cross sectional shape of the micro-nano structure is in " convex " shape；
It is described it is raised include expanded letter portion and the narrow body portion in the expanded letter portion, wherein, a height of 100nm in the expanded letter portion~
300nm, a width of 100nm~400nm in the expanded letter portion；A height of 50nm~150nm in the narrow body portion, the width in the narrow body portion
For 50nm~200nm；
The projection of the micro-nano structure is in periodic arrangement, and the raised arrangement cycle is 2 μm~5 μm.
7. a kind of preparation method of ultra thin substrate bonding structure as described in claim 1~6 is any, it is characterised in that including：
Carrier substrate and ultra thin substrate are provided；
Micro-nano structure is formed in the side of the carrier substrate；
The ultra thin substrate is fitted with the side that the carrier substrate forms the micro-nano structure.
8. the preparation method of ultra thin substrate bonding structure according to claim 7, it is characterised in that in the carrier substrate
Side formed micro-nano structure the step of include：
Embossed layer is formed on the carrier substrate；
Impression formboard with the structure matched with the micro-nano structure is placed in the carrier substrate and is formed with the impressing
The side of layer, and be aligned；
The impression formboard and the embossed layer are pressed, and use illumination methods or mode of heating, solidifies the embossed layer；
The impression formboard is separated with the embossed layer；
The embossed layer is performed etching, carrier substrate region corresponding with the groove of the micro-nano structure is exposed；
The exposed carrier substrate is performed etching；
Remove the embossed layer of residual.
9. the preparation method of ultra thin substrate bonding structure according to claim 7, it is characterised in that in the carrier substrate
Side formed micro-nano structure the step of include：
Laminating layer is formed on the carrier substrate；
Impression formboard with the structure matched with the micro-nano structure is placed in the carrier substrate and is formed with described fit
The side of layer, and be aligned；
The impression formboard and the laminating layer are pressed, and use illumination methods or mode of heating, solidifies the laminating layer；
The impression formboard is separated with the laminating layer, the micro-nano structure is formed on the laminating layer.
10. a kind of preparation method of display device, it is characterised in that including the ultra thin substrate as described in claim 7~9 is any
The preparation method of bonding structure.
11. the preparation method of display device according to claim 10, it is characterised in that by ultra thin substrate and carrier substrate
After the step of side for forming micro-nano structure is fitted, the preparation method of the display device also includes：
Dot structure is formed on the ultra thin substrate；
The ultra thin substrate and the carrier substrate are peeled off.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710423579.6A CN107179620A (en) | 2017-06-07 | 2017-06-07 | The preparation method of ultra thin substrate bonding structure and preparation method thereof, display device |
| PCT/CN2018/090246 WO2018224002A1 (en) | 2017-06-07 | 2018-06-07 | Substrate attachment structure and manufacturing method therefor, and method for manufacturing display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710423579.6A CN107179620A (en) | 2017-06-07 | 2017-06-07 | The preparation method of ultra thin substrate bonding structure and preparation method thereof, display device |
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| CN107179620A true CN107179620A (en) | 2017-09-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018224002A1 (en) * | 2017-06-07 | 2018-12-13 | 京东方科技集团股份有限公司 | Substrate attachment structure and manufacturing method therefor, and method for manufacturing display apparatus |
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| WO2018224002A1 (en) | 2018-12-13 |
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